JP2012188597A5 - - Google Patents

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JP2012188597A5
JP2012188597A5 JP2011054766A JP2011054766A JP2012188597A5 JP 2012188597 A5 JP2012188597 A5 JP 2012188597A5 JP 2011054766 A JP2011054766 A JP 2011054766A JP 2011054766 A JP2011054766 A JP 2011054766A JP 2012188597 A5 JP2012188597 A5 JP 2012188597A5
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film
expandable
weight
polymer
parts
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JP2012188597A (en
JP5620310B2 (en
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Claims (20)

4−メチル−1−ペンテン(共)重合体(A)と熱可塑性エラストマー(B)とを含む拡張性基材フィルムであって、
前記(B)の含有量が(A)と(B)の合計100重量部に対して3〜50重量部であり、かつ前記フィルムについて示差走査熱量計(DSC)により測定される前記(B)に由来する融点TmB2が100℃以下または前記融点TmB2が実質的に観測されない拡張性基材フィルム。
An expandable substrate film comprising 4-methyl-1-pentene (co) polymer (A) and a thermoplastic elastomer (B),
The content of (B) is 3 to 50 parts by weight with respect to a total of 100 parts by weight of (A) and (B), and the film is measured by a differential scanning calorimeter (DSC). An expandable substrate film having a melting point TmB2 derived from a temperature of 100 ° C. or lower or substantially no observation of the melting point TmB2.
4−メチル−1−ペンテン(共)重合体(A)と熱可塑性エラストマー(B)とを含む拡張性基材フィルムであって、
前記(B)の含有量が(A)と(B)の合計100重量部に対して3〜50重量部であり、かつ前記(B)の示差走査熱量計(DSC)により測定される融点TmB1が100℃以下または前記融点TmB1が実質的に観測されない拡張性基材フィルム。
An expandable substrate film comprising 4-methyl-1-pentene (co) polymer (A) and a thermoplastic elastomer (B),
The content of (B) is 3 to 50 parts by weight with respect to the total of 100 parts by weight of (A) and (B), and the melting point TmB1 measured by the differential scanning calorimeter (DSC) of (B) Is an expandable base film in which the melting point TmB1 is not substantially observed.
4−メチル−1−ペンテン(共)重合体(A)のASTM−0638準拠にして測定される23℃における引張弾性率が500〜2000MPaである、請求項1または2に記載の拡張性基材フィルム。   The expandable substrate according to claim 1 or 2, wherein the 4-methyl-1-pentene (co) polymer (A) has a tensile elastic modulus at 23 ° C measured in accordance with ASTM-0638 of 500 to 2000 MPa. the film. 熱可塑性エラストマー(B)のJIS K7113‐2に準拠して測定される23℃における引張弾性率が1〜50MPaである、請求項1ないし3のいずれか一項に記載の拡張性基材フィルム。   The expandable base film according to any one of claims 1 to 3, wherein the thermoplastic elastomer (B) has a tensile elastic modulus at 23 ° C measured in accordance with JIS K7113-1 of 1 to 50 MPa. 熱可塑性エラストマー(B)が、オレフィン系エラストマーおよび/またはスチレン系エラストマーからなる、請求項1ないし4のいずれか一項に記載の拡張性基材フィルム。   The expandable base film according to any one of claims 1 to 4, wherein the thermoplastic elastomer (B) comprises an olefin-based elastomer and / or a styrene-based elastomer. 熱可塑性エラストマー(B)の密度が850〜980kg/mである、請求項1ないし5のいずれか一項に記載の拡張性基材フィルム。 The density of the thermoplastic elastomer (B) is 850~980kg / m 3, expandable base film according to any one of claims 1 to 5. 4−メチル−1−ペンテン(共)重合体(A)と熱可塑性エラストマー(B)とプロピレン(共)重合体(C)の合計100重量部に対して0.3〜40重量部のプロピレン(共)重合体(C)を含む、請求項1ないし6のいずれか一項に記載の拡張性基材フィルム。   0.3 to 40 parts by weight of propylene (100 to 100 parts by weight in total of 4-methyl-1-pentene (co) polymer (A), thermoplastic elastomer (B) and propylene (co) polymer (C) The expandable substrate film according to any one of claims 1 to 6, comprising a (co) polymer (C). さらにプロピレン(共)重合体(C)を含む請求項1に記載のフィルムであって、前記フィルムについて示差走査熱量計(DSC)により測定される前記(C)に由来する融点TmC2が110〜175℃の範囲内にある、請求項7に記載の拡張性基材フィルム。   Furthermore, it is a film of Claim 1 containing a propylene (co) polymer (C), Comprising: Melting | fusing point TmC2 derived from the said (C) measured with a differential scanning calorimeter (DSC) about the said film is 110-175. The expandable substrate film according to claim 7, which is in the range of ° C. 基材の主面に垂直な切断面のTEM像(撮像範囲のフィルム厚さ方向の距離は15μm、かつ撮像面積は45μm)で、4−メチル−1−ペンテン(共)重合体(A)から実質的に構成される相と、熱可塑性エラストマー(B)から実質的に構成される相の相分散構造が観察される、請求項1ないし8のいずれか一項に記載の拡張性基材フィルム。 A TEM image of the cut surface perpendicular to the main surface of the substrate (the distance in the film thickness direction of the imaging range is 15 μm and the imaging area is 45 μm 2 ), and 4-methyl-1-pentene (co) polymer (A) The expandable substrate according to any one of claims 1 to 8, wherein a phase-dispersed structure consisting of a phase substantially composed of the above and a phase substantially composed of the thermoplastic elastomer (B) is observed. the film. 120℃における線膨張係数(1/K)が1.0×10−4〜2.0×10−3である、請求項1ないし9のいずれか一項に記載の拡張性基材フィルム。 The expandable base film according to any one of claims 1 to 9, wherein a linear expansion coefficient (1 / K) at 120 ° C is 1.0 x 10 -4 to 2.0 x 10 -3 . 請求項1ないし10のいずれか一項に記載の拡張性基材フィルムからなる基材層と、粘着層とを含む、拡張性粘着フィルム。   The expandable adhesive film containing the base material layer which consists of an expandable base film as described in any one of Claims 1 thru | or 10, and an adhesion layer. 粘着層の25℃における引張弾性率が50MPa以下である、請求項11に記載の拡張性粘着フィルム。   The expandable adhesive film according to claim 11, wherein the adhesive layer has a tensile elastic modulus at 25 ° C. of 50 MPa or less. 粘着層の昇温速度2℃/min.で室温から200℃まで昇温した際の熱重量減少率が2%未満である、請求項11または12に記載の拡張性粘着フィルム。   Temperature rising rate of the adhesive layer 2 ° C./min. The expandable pressure-sensitive adhesive film according to claim 11 or 12, wherein the thermal weight loss rate when the temperature is raised from room temperature to 200 ° C is less than 2%. 粘着層を最表面に有する請求項11ないし13のいずれか一項に記載の拡張性粘着フィルム。   The expandable adhesive film according to any one of claims 11 to 13, which has an adhesive layer on the outermost surface. 前記基材層以外の層の25℃における引張弾性率が、前記基材層の25℃の引張弾性率未満である、請求項11ないし14のいずれか一項に記載の拡張性粘着フィルム。   The expandable adhesive film according to any one of claims 11 to 14, wherein a tensile elastic modulus at 25 ° C of a layer other than the base material layer is less than a tensile elastic modulus at 25 ° C of the base material layer. 請求項1ないし15のいずれか一項に記載のフィルムを含んでなる、半導体用ダイシングフィルム。   A semiconductor dicing film comprising the film according to claim 1. 4−メチル−1−ペンテン(共)重合体(A)と、示差走査熱量計(DSC)で得られる融点TmB1が100℃以下または前記融点TmB1が実質的に観測されない熱可塑性エラストマー(B)とを含んでなり、前記(B)の含有量が(A)と(B)の合計100重量部に対して3〜50重量部の溶融混練物を成形する工程を含む、請求項1ないし10のいずれか一項に記載の拡張性基材フィルムの製造方法。   A 4-methyl-1-pentene (co) polymer (A), a thermoplastic elastomer (B) having a melting point TmB1 obtained by a differential scanning calorimeter (DSC) of 100 ° C. or lower, or the melting point TmB1 substantially not observed The method according to claim 1, further comprising a step of forming 3 to 50 parts by weight of a melt-kneaded product with respect to a total of 100 parts by weight of (A) and (B). The manufacturing method of the expandable base film as described in any one. 半導体ウエハに、請求項16に記載のダイシングフィルムを前記ダイシングフィルムの粘着剤層を介して貼り付ける工程と、前記半導体ウエハをダイシングして半導体チップを得る工程と、前記ダイシングフィルムを拡張して、前記半導体チップをピックアップする工程と、を含む半導体装置の製造方法。   A step of attaching the dicing film according to claim 16 to a semiconductor wafer via an adhesive layer of the dicing film, a step of dicing the semiconductor wafer to obtain a semiconductor chip, and expanding the dicing film, Picking up the semiconductor chip; and a method of manufacturing a semiconductor device. 回路面を有する半導体ウエハの回路面と対向する面に、請求項16に記載のダイシングフィルムを前記フィルムの粘着剤層を介して貼り付ける工程と、前記半導体ウエハの回路面を封止する工程と、前記半導体ウエハをダイシングして半導体チップを得る工程と、前記ダイシングフィルムを拡張して、前記半導体チップをピックアップする工程と、を含む、半導体装置の製造方法。   A step of attaching the dicing film according to claim 16 to a surface of the semiconductor wafer having a circuit surface facing the circuit surface through an adhesive layer of the film; and a step of sealing the circuit surface of the semiconductor wafer; A method for manufacturing a semiconductor device, comprising: a step of dicing the semiconductor wafer to obtain a semiconductor chip; and a step of expanding the dicing film and picking up the semiconductor chip. 4−メチル−1−ペンテン(共)重合体(A)と、示差走査熱量計(DSC)で得られる融点TmB1が100℃以下または前記融点TmB1が実質的に観測されない熱可塑性エラストマー(B)とを含んでなり、A 4-methyl-1-pentene (co) polymer (A), a thermoplastic elastomer (B) having a melting point TmB1 obtained by a differential scanning calorimeter (DSC) of 100 ° C. or lower, or the melting point TmB1 substantially not observed Comprising
前記(B)の含有量が(A)と(B)の合計100重量部に対して3〜50重量部である拡張性基材フィルム用溶融混練物。The melt-kneaded material for expandable substrate films, wherein the content of (B) is 3 to 50 parts by weight with respect to a total of 100 parts by weight of (A) and (B).
JP2011054766A 2011-03-11 2011-03-11 Expandable adhesive film, semiconductor dicing film, and semiconductor device manufacturing method using the same Active JP5620310B2 (en)

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JP6542502B2 (en) * 2013-11-15 2019-07-10 三井化学株式会社 Expandable substrate film, dicing film, surface protection film for semiconductor, and method for manufacturing semiconductor device
JP6303754B2 (en) * 2014-04-21 2018-04-04 住友ベークライト株式会社 Dicing film
JP2015214658A (en) * 2014-05-12 2015-12-03 三井化学株式会社 Expandable substrate film, expandable adhesive film, dicing film, production method of expandable substrate film and production method of semiconductor device
JP2016162787A (en) * 2015-02-27 2016-09-05 住友ベークライト株式会社 Base material film for dicing film and dicing film
TW201901847A (en) * 2017-05-11 2019-01-01 日商三井化學東賽璐股份有限公司 Parts manufacturing tool and part manufacturing method
JP2018076517A (en) * 2017-12-01 2018-05-17 三井化学株式会社 Dicing film, surface protective film for semiconductor, and method of manufacturing semiconductor device
JP7236366B2 (en) * 2019-09-25 2023-03-09 日東電工株式会社 surface protection film

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JP4545379B2 (en) * 2003-01-06 2010-09-15 グンゼ株式会社 Dicing adhesive sheet
JP5448430B2 (en) * 2007-12-18 2014-03-19 古河電気工業株式会社 Wafer sticking sheet and wafer processing method
JP2010092945A (en) * 2008-10-03 2010-04-22 Mitsui Chemicals Inc Adhesive film for semiconductor wafer protection and method of protecting semiconductor wafer using the same
JP2012153775A (en) * 2011-01-25 2012-08-16 Mitsui Chemicals Inc Film, method for producing the same, and method for producing led package using the same

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