JP2012186465A5 - Substrate processing apparatus and semiconductor device manufacturing method - Google Patents
Substrate processing apparatus and semiconductor device manufacturing method Download PDFInfo
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- JP2012186465A5 JP2012186465A5 JP2012029399A JP2012029399A JP2012186465A5 JP 2012186465 A5 JP2012186465 A5 JP 2012186465A5 JP 2012029399 A JP2012029399 A JP 2012029399A JP 2012029399 A JP2012029399 A JP 2012029399A JP 2012186465 A5 JP2012186465 A5 JP 2012186465A5
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- Prior art keywords
- substrate
- supplying
- supply unit
- support
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims 24
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000004065 semiconductor Substances 0.000 title claims 2
- 239000003507 refrigerant Substances 0.000 claims 4
- 239000002826 coolant Substances 0.000 claims 3
- 239000011261 inert gas Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
Claims (2)
前記基板を支持する基板支持台と、
前記基板支持台に支持された前記基板にマイクロ波を供給するマイクロ波供給部と、
前記基板支持台に支持された前記基板に不活性ガスを供給するガス供給部と、
前記基板支持台の内部に設けられた冷媒流路に冷媒を供給する冷媒供給部と、
前記処理室に連接され、前記基板を搬送する搬送機構を備える搬送室と、
前記基板を前記支持台に載置する処理と、前記基板の表面に向かって前記マイクロ波を供給して加熱する処理と、前記基板の表面に向かって前記不活性ガスを供給すると共に前前冷媒を供給することにより、前記基板の表面と前記基板の裏面を同時に冷却する処理と、を行わせるように前記マイクロ波供給部、前記ガス供給部、前記冷媒供給部をそれぞれ制御するよう構成される制御手段と、
を有する基板処理装置。 A processing chamber for processing the substrate;
A substrate support for supporting the substrate;
A microwave supply unit for supplying microwaves to the substrate supported by the substrate support ;
A gas supply unit for supplying an inert gas to the substrate supported by the substrate support ;
A refrigerant supply unit for supplying a refrigerant to a refrigerant channel provided inside the substrate support;
A transfer chamber connected to the processing chamber and provided with a transfer mechanism for transferring the substrate ;
A process of placing the substrate on the support, a process of supplying and heating the microwave toward the surface of the substrate, and supplying the inert gas toward the surface of the substrate and a pre-pre-coolant Is configured to control the microwave supply unit, the gas supply unit, and the refrigerant supply unit so that the surface of the substrate and the back surface of the substrate are simultaneously cooled. Control means;
A substrate processing apparatus.
基板の表面に向かってマイクロ波を供給して加熱する工程と、Supplying microwaves toward the surface of the substrate and heating;
基板の表面に向かって不活性ガスを供給すると共に前記基板支持台の内部に設けられた冷媒流路に冷媒を供給することにより、前記基板の表面と前記基板の裏面を同時に冷却する工程と、Cooling the surface of the substrate and the back surface of the substrate simultaneously by supplying an inert gas toward the surface of the substrate and supplying a coolant to a coolant channel provided inside the substrate support;
前記基板を前記処理室から搬出する工程と、Unloading the substrate from the processing chamber;
を有する半導体装置の製造方法。A method for manufacturing a semiconductor device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012029399A JP2012186465A (en) | 2011-02-18 | 2012-02-14 | Substrate processing apparatus |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011033244 | 2011-02-18 | ||
| JP2011033244 | 2011-02-18 | ||
| JP2012029399A JP2012186465A (en) | 2011-02-18 | 2012-02-14 | Substrate processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012186465A JP2012186465A (en) | 2012-09-27 |
| JP2012186465A5 true JP2012186465A5 (en) | 2015-03-19 |
Family
ID=47016205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012029399A Pending JP2012186465A (en) | 2011-02-18 | 2012-02-14 | Substrate processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2012186465A (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3177152B2 (en) * | 1990-07-20 | 2001-06-18 | 株式会社東芝 | Heat treatment film forming method |
| FR2747840B1 (en) * | 1996-04-22 | 1998-09-11 | Motorola Semiconducteurs | IRRADIATION APPARATUS COMBINED BY AN ION BEAM AND MICROWAVE RADIATION, AND ASSOCIATED PROCESS |
| WO2003069020A1 (en) * | 2002-02-12 | 2003-08-21 | Hitachi Zosen Corporation | System for processing substrate and method for processing substrate |
| JP2007258286A (en) * | 2006-03-22 | 2007-10-04 | Tokyo Electron Ltd | Heat treatment apparatus and method, and storage medium |
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2012
- 2012-02-14 JP JP2012029399A patent/JP2012186465A/en active Pending
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