JP2012084574A5 - - Google Patents
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- JP2012084574A5 JP2012084574A5 JP2010227239A JP2010227239A JP2012084574A5 JP 2012084574 A5 JP2012084574 A5 JP 2012084574A5 JP 2010227239 A JP2010227239 A JP 2010227239A JP 2010227239 A JP2010227239 A JP 2010227239A JP 2012084574 A5 JP2012084574 A5 JP 2012084574A5
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- JP
- Japan
- Prior art keywords
- tray
- temperature
- plasma processing
- substrate
- stage
- Prior art date
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Claims (3)
a)前記反応室の外部に設けられたトレイステージと、
b)前記被処理基板が載置された前記トレイを前記トレイステージと前記反応室の間で搬送するトレイ搬送機構と、
c)前記トレイステージ上のトレイからプラズマ処理済みの被処理基板を取り出すと共に、プラズマ処理前の被処理基板を前記トレイステージ上のトレイに載置する基板移載機構と、
d)前記トレイステージ上に載置されるトレイの温度を所定温度範囲に維持する温度維持手段と
を備えることを特徴とするプラズマ処理装置。 In a plasma processing apparatus for carrying a plasma process on a substrate to be processed by carrying the substrate to be processed into a reaction chamber in a state of being placed on a tray,
a) a tray stage provided outside the reaction chamber;
b) a tray transfer mechanism for transferring the tray on which the substrate to be processed is placed between the tray stage and the reaction chamber;
c) A substrate transfer mechanism for taking out the substrate to be processed from the tray on the tray stage and placing the substrate to be processed before the plasma processing on the tray on the tray stage;
d) A plasma processing apparatus comprising temperature maintaining means for maintaining the temperature of the tray placed on the tray stage in a predetermined temperature range.
前記トレイステージに載置されたトレイの温度を検出する第２温度検出手段と、
前記第１温度検出手段の検出結果及び前記第２温度検出手段の検出結果に基づき、前記トレイステージ上のトレイの温度が、前記プラズマ処理中における前記反応室内のトレイの温度に維持されるように前記温度維持手段を制御する制御手段を更に備えることを特徴とする請求項１記載のプラズマ処理装置。 First temperature detection means for detecting the temperature of the tray in the reaction chamber during plasma processing;
Second temperature detecting means for detecting the temperature of the tray placed on the tray stage;
Based on the detection result of the first temperature detection means and the detection result of the second temperature detection means, the temperature of the tray on the tray stage is maintained at the temperature of the tray in the reaction chamber during the plasma processing. The plasma processing apparatus according to claim 1, further comprising control means for controlling the temperature maintaining means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010227239A JP5545488B2 (en) | 2010-10-07 | 2010-10-07 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010227239A JP5545488B2 (en) | 2010-10-07 | 2010-10-07 | Plasma processing equipment |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012084574A JP2012084574A (en) | 2012-04-26 |
| JP2012084574A5 true JP2012084574A5 (en) | 2013-08-15 |
| JP5545488B2 JP5545488B2 (en) | 2014-07-09 |
Family
ID=46243179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010227239A Active JP5545488B2 (en) | 2010-10-07 | 2010-10-07 | Plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5545488B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014139980A (en) | 2013-01-21 | 2014-07-31 | Hitachi High-Technologies Corp | Device and method for processing specimen and charged particle radiation device |
| JP6363927B2 (en) * | 2014-10-07 | 2018-07-25 | 大陽日酸株式会社 | Substrate transfer method and apparatus in vapor phase growth apparatus |
| CN106505017B (en) * | 2016-10-25 | 2019-06-25 | 通富微电子股份有限公司 | The process system and method for surface treatment are fanned out to for panel grade |
| JP6735909B2 (en) * | 2017-04-04 | 2020-08-05 | 株式会社Ｆｕｊｉ | Plasma generation system |
| CN111489994A (en) * | 2019-01-25 | 2020-08-04 | 上海和辉光电有限公司 | Feeding mechanism, bonding machine and feeding method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2988167B2 (en) * | 1992-11-27 | 1999-12-06 | 安藤電気株式会社 | IC transport mechanism in which heating carrier circulates in high-temperature bath |
| JP3404608B2 (en) * | 1994-09-28 | 2003-05-12 | 東芝機械株式会社 | Sample temperature adjusting device such as charged beam drawing device and sample holder used in this device |
| JP4083306B2 (en) * | 1998-08-28 | 2008-04-30 | 松下電器産業株式会社 | Rinsing method after plasma treatment |
| JP2001345313A (en) * | 2000-05-31 | 2001-12-14 | Ebara Corp | Substrate treating device |
| JP2007109771A (en) * | 2005-10-12 | 2007-04-26 | Matsushita Electric Ind Co Ltd | Tray for plasma treatment apparatus |
| JP5145126B2 (en) * | 2008-06-11 | 2013-02-13 | 株式会社アルバック | Bonding apparatus and bonding method |
| JP5417751B2 (en) * | 2008-06-30 | 2014-02-19 | 株式会社ニコン | Joining apparatus and joining method |
-
2010
- 2010-10-07 JP JP2010227239A patent/JP5545488B2/en active Active
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