JP2012170025A - Acoustic wave device, and method for manufacturing acoustic wave device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an acoustic wave device which can suppress stress, and provide a method for manufacturing the acoustic wave device.SOLUTION: The method for manufacturing the acoustic wave device includes: a step of providing a first sealing part 13 which seals a piezoelectric substrate 10 on which a vibration part 11 for exciting acoustic waves by a piezoelectric body is formed so that the vibration part 11 is exposed; a step of covering the vibration part 11 so that the vibration part 11 is exposed to a gap 17, and providing a second sealing part 14 having notch parts 19 formed at positions corresponding to dicing lines 18 for dicing the piezoelectric substrate 10 into pieces, on the first sealing part 13; a step of heating the second sealing part 14 after the step of providing the second sealing part 14; and a step of cutting and separating the second sealing part 14 and the piezoelectric substrate 10 in a laminating direction thereof along the dicing lines 18 and dividing them into acoustic wave device chips.

Description

  The present invention relates to an acoustic wave device and a method for manufacturing an acoustic wave device.

  The acoustic wave device chip used as a filter or a duplexer in a mobile communication device or the like is required to be downsized. As an acoustic wave element used for an acoustic wave device chip, a surface acoustic wave (SAW) element in which an IDT (Inter Digital Transducer) is formed on a piezoelectric substrate, and a piezoelectric thin film resonator having a piezoelectric film sandwiched between electrodes ( FBAR: Film Bulk Acoustic Resonator). For example, Patent Document 1 describes a SAW device in which the entire surface on which an IDT or the like of a piezoelectric substrate is formed is covered with a sealing portion. Patent Document 2 describes a SAW device that covers a dicing line with a sealing portion in order to suppress a foreign substance from dropping onto the dicing line of a piezoelectric substrate.

JP 2002-261582 A JP 2008-135998 A

  However, in the invention described in Patent Document 1, when the sealing portion is heated, a large stress may be applied to the piezoelectric substrate. Further, in the invention described in Patent Document 2, it is possible to suppress the fall of foreign matter, but since the sealing portion covers the dicing line, there is a possibility that a large stress is applied to the piezoelectric substrate as in Patent Document 1. Even in the case of FBAR, a large stress may be applied to the substrate provided with the piezoelectric film.

  Thus, when a big stress is added to a board | substrate, possibility that the increase of inferior goods and the damage of an elastic wave device will arise increases. An object of this invention is to provide the manufacturing method of the elastic wave device which can suppress stress, and an elastic wave device in view of the said subject.

  The present invention includes a step of providing a first sealing portion that seals a substrate on which the vibration portion is formed so that a vibration portion that excites an elastic wave by a piezoelectric body is exposed, and the vibration portion is exposed to a gap. A step of providing a second sealing portion on the first sealing portion so as to cover the vibration portion and form a notch at a position corresponding to a dicing line for separating the substrate into pieces, After the step of providing the second sealing portion, the step of heating the second sealing portion, and along the dicing line, the second sealing portion and the substrate are cut and separated in the stacking direction, And a step of dividing the acoustic wave device chip into acoustic wave device chips. According to the present invention, stress can be suppressed.

  The said structure WHEREIN: The process of providing a said 1st sealing part can be set as the structure which provides a said 1st sealing part so that the said dicing line may be exposed. According to this configuration, stress can be more effectively suppressed.

  In the above configuration, the method includes the step of providing an electrode penetrating the first sealing portion and the second sealing portion, and the step of providing the second sealing portion includes forming the notch portion between the plurality of electrodes. As described above, the second sealing portion may be provided. According to this structure, airtightness can be improved. In addition, the electrode can be formed satisfactorily.

  In the above configuration, the step of providing the second sealing portion includes the step of having the notch on each of a plurality of regions that become sides of the substrate after the substrate is separated into pieces along the dicing line. 2 It can be set as the process of providing a sealing part. According to this configuration, stress can be more effectively suppressed.

  The said structure WHEREIN: The process of providing a said 2nd sealing part can be made into the process of providing a said 2nd sealing part so that the said some notch part from which a shape differs is formed.

  The present invention includes a substrate, a vibration portion provided on the substrate and exciting an elastic wave by a piezoelectric body, and a first sealing portion provided on the substrate so that the vibration portion is exposed to a gap, An elastic wave device comprising: a second sealing portion provided on the first sealing portion so that the vibration portion is exposed to the gap and has a cutout portion at a part of an outer periphery of the substrate. It is. According to the present invention, stress can be suppressed.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the elastic wave device which can suppress stress, and an elastic wave device can be provided.

FIG. 1A is a plan view illustrating an acoustic wave device before singulation according to Comparative Example 1, and FIG. 1B illustrates an acoustic wave device before singulation according to Comparative Example 1. It is sectional drawing. FIG. 2A is a cross-sectional view illustrating an acoustic wave device before singulation according to Comparative Example 2, and FIG. 2B illustrates an acoustic wave device before singulation according to Comparative Example 3. FIG. FIG. 3A is a plan view illustrating an acoustic wave device according to the first embodiment before being singulated. FIG. 3B is an enlarged view of FIG. FIG. 3C is a cross-sectional view illustrating the acoustic wave device according to the first embodiment before being singulated. FIG. 4A to FIG. 4E are cross-sectional views illustrating the method for manufacturing the acoustic wave device according to the first embodiment. FIG. 5A to FIG. 5D are cross-sectional views illustrating the method for manufacturing the acoustic wave device according to the first embodiment. FIG. 6 is a plan view illustrating an acoustic wave device according to the second embodiment. FIG. 7 is a plan view illustrating an acoustic wave device according to the third embodiment. FIG. 8 is a plan view illustrating an acoustic wave device according to the fourth embodiment.

  Prior to the description of the embodiments, an example of a SAW device will be described as a comparative example. First, Comparative Example 1 will be described. FIG. 1A is a plan view illustrating an acoustic wave device according to Comparative Example 1, and FIG. 1B is a cross-sectional view illustrating the acoustic wave device according to Comparative Example 1. In FIG. 1A and FIG. 1B, an acoustic wave device before separation is illustrated. Moreover, FIG.1 (b) is sectional drawing along AA and BB of Fig.1 (a), the left side shows an AA cross section, and the right side shows a BB cross section. FIG. 1A shows a state in which four acoustic wave devices 100R-1 are formed on a wafer-like piezoelectric substrate. The wafer state is an acoustic wave device, and the wafer state is singulated to form an acoustic wave device chip.

  As shown in FIG. 1A and FIG. 1B, in the acoustic wave device 100R-1 according to Comparative Example 1, the vibrating portion 111, the wiring 112, and the first sealing are formed on the piezoelectric substrate 110 made of a piezoelectric material. A portion 113 is provided. A second sealing portion 114 is provided on the first sealing portion 113. In addition, a through electrode 115 that penetrates the first sealing portion 113 and the second sealing portion 114 and is electrically connected to the wiring 112 is provided. An electrode 116 is provided on the surface of the through electrode 115. The vibration unit 111 includes an IDT and a reflector, and excites an elastic wave. The vibration part 111 is exposed to a gap 117 formed on the vibration part 111. The vibrating portion 111 and the electrode 116 are electrically connected via the wiring 112 and the through electrode 115. The first sealing part 113 and the second sealing part 114 seal the vibration part 111 and suppress the entry of moisture and foreign matter into the vibration part 111. Thereby, the vibration part 111 is protected and the characteristic of the elastic wave device 100R-1 is ensured satisfactorily. The piezoelectric substrate 110 formed as a wafer is separated into pieces at a dicing line 118. Thereby, a plurality of elastic wave device chips are acquired from one wafer.

  The 1st sealing part 113 and the 2nd sealing part 114 consist of resin, such as a photosensitive epoxy resin, for example, and are shape | molded by exposure and image development. Moreover, the 1st sealing part 113 and the 2nd sealing part 114 have thermosetting property, and are hardened | cured when heated. In each heating / curing process, when the piezoelectric substrate 110 is put into a furnace and heated, the piezoelectric substrate 110, the first sealing portion 113, and the second sealing portion 114 are subjected to a difference in thermal expansion coefficient. Stress may be applied to the substrate 110. In particular, in Comparative Example 1, the first sealing portion 113 and the second sealing portion 114 are provided so as to cover the entire piezoelectric substrate 110. Therefore, a large stress may be applied to the piezoelectric substrate 110. Due to the stress, the piezoelectric substrate 110 may be warped. When the piezoelectric substrate 110 is warped, for example, the piezoelectric substrate 110 is not sufficiently sucked by the suction tool, and the generation of defective products increases, such as the piezoelectric substrate 110 being cracked due to a drop during the movement / conveyance of the acoustic wave device. Sometimes.

  Next, Comparative Examples 2 and 3 will be described. FIG. 2A is a cross-sectional view illustrating an acoustic wave device before singulation according to Comparative Example 2, and FIG. 2B illustrates an acoustic wave device before singulation according to Comparative Example 3. FIG.

  As shown in FIG. 2A, in the acoustic wave device 100R-2 according to the comparative example 2, the first sealing portion 113 and the second sealing portion 114 are not provided on the dicing line 118. Accordingly, the stress applied to the piezoelectric substrate 110 is suppressed. However, for example, a foreign material such as a metal that is a material of the through electrode 115 and a solder that is a material of the electrode 116 may fall into the dicing line 118 of the piezoelectric substrate 110. Thereby, there exists a possibility that a dicing process may become difficult.

  As shown in FIG. 2B, in the acoustic wave device 100R-3 according to the comparative example 3, the first sealing portion 13 is not provided on the dicing line 118, and the second sealing portion 114 is the dicing line 118. It is provided so as to cover. The 2nd sealing part 114 functions as a lid | cover which protects the dicing line 118, and can suppress the fall of a foreign material. However, since the second sealing portion 114 is provided so as to cover the entire piezoelectric substrate 110, a large stress may be applied to the piezoelectric substrate 110 as in the first comparative example. As described above, the sealing portions (the first sealing portion 113 and the second sealing portion 114) are required not only to protect the vibration portion 111 but also to suppress stress and protect the dicing line.

  Next, embodiments of the present invention will be described with reference to the drawings.

  FIG. 3A is a plan view illustrating an acoustic wave device according to the first embodiment before being singulated. FIG. 3B is an enlarged view of a region S surrounded by a broken line in the center of FIG. FIG. 3C is a cross-sectional view illustrating the acoustic wave device before singulation according to the first embodiment. A cross section taken along the cutting line AA in FIG. A cross section taken along the cutting line BB in (a) is indicated by Q2.

  As shown in FIGS. 3A and 3C, the acoustic wave device 100 according to the first embodiment includes a piezoelectric substrate 10 made of a piezoelectric material, a vibrating unit 11, a wiring 12, a first sealing unit 13, a first sealing unit 13, and a second sealing unit 13. 2 The sealing part 14, the electrode 16, and the penetration electrode 15 are provided. The vibration part 11, the wiring 12, and the first sealing part 13 are provided on the piezoelectric substrate 10. In the case of the SAW device, the vibration unit 11 is formed on the surface of the piezoelectric substrate 10 that is a piezoelectric body. The piezoelectric substrate 10 serves as a substrate for supporting the entire element as well as converting electric energy into surface acoustic wave vibration in the IDT included in the vibration unit 11 by piezoelectric action (or vice versa). The second sealing part 14 is provided on the first sealing part 13 so as to cover the vibration part 11. That is, the first sealing portion 13 and the second sealing portion 14 seal the piezoelectric substrate 10. The vibration part 11 is exposed in the space 17 surrounded by the first sealing part 13 and the second sealing part 14. For this reason, the excitation of the elastic wave by the vibration part 11 is not prevented. The through electrode 15 passes through the first sealing portion 13 and extends into the second sealing portion 14. A lower end portion of the through electrode 15 is electrically connected to the wiring 12, and an electrode 16 is provided on the upper surface of the through electrode 15 so as to be exposed from the second sealing portion 14. That is, the vibrating portion 11 and the electrode 16 are electrically connected via the wiring 12 and the through electrode 15. The electrode 16 functions as an external connection terminal that connects the acoustic wave device 100 and the outside.

  A dotted line C in FIGS. 3A and 3B indicates an outer peripheral end portion of the first sealing portion 13. A broken line D indicates a portion that becomes an outer peripheral end portion of the second sealing portion 14 after the piezoelectric substrate 10 is separated. The second sealing portion 14 has notches 19a, 19b, and 19s (hereinafter, collectively referred to as notches 19) that are parallel along each of the plurality of dicing lines 18. The same applies to each of the portions 619, 719, and 819.). The dicing line 18 is indicated by a solid line for convenience in the plan view and by a broken line in the sectional view. As shown in FIGS. 3A and 3B, the second sealing portion 14 has a notch 19 on each of a plurality of regions that become sides of the piezoelectric substrate 10 after being singulated. Each of the plurality of notches 19 is formed on each dicing line 18 and between adjacent electrodes 16. The inner end (end surface on the vibration part 11 side) of the cutout part 19 substantially coincides with the outer peripheral end part of the first sealing part 13. Therefore, in the notch part 19, the space which connected the 1st sealing part 13 and the 2nd sealing part 14 in the lamination direction is formed. The stacking direction is the thickness direction of the piezoelectric substrate 10. As shown in FIG. 3B by a broken-line circle, the corner 20a of the notch 19 has an angle of 90 °. That is, the planar shape of the notch 19 is a rectangle. Among the notches 19, the notches provided on the left and right sides of the acoustic wave device in FIG. 3A are referred to as notches 19a. Among the notches 19, the notches provided on the upper side and the lower side are referred to as notches 19b. As described above, the second sealing portion 14 substantially coincides with the outer peripheral end of the first sealing portion 13 at the inner end of the notch portion 19, and is more than the first sealing portion 13 at portions other than the notch portion 19. It protrudes outward and has a shape that substantially matches the outer shape of the piezoelectric substrate 10. The length L1 of the acoustic wave device 100 is 1 mm, for example, and the width W1 is 0.9 mm, for example. The length L2 of the notch 19a is, for example, 0.1 mm, and the width W2 is, for example, 0.05 mm. The length L3 of the notch 19b is, for example, 0.05 mm, and the width W3 is, for example, 0.3 mm. The length direction was the stacking direction in FIG. 3A, and the width direction was the left-right direction in FIG.

The piezoelectric substrate 10 is made of a piezoelectric material such as lithium tantalate (LiTaO ₃ ) or lithium niobate (LiNbO ₃ ). The vibration part 11 and the wiring 12 are made of a metal such as an aluminum (Al) alloy, for example. An aluminum alloy is an alloy containing aluminum, for example, an alloy containing aluminum as a main component and copper (Cu) added thereto. The 1st sealing part 13 and the 2nd sealing part 14 consist of resin, such as a photosensitive epoxy resin which has thermosetting, for example. The through electrode 15 is formed, for example, by providing nickel (Ni) and gold (Au) on a base layer in which titanium (Ti) and gold (Au) are stacked from the side closer to the wiring 12. The electrode 16 is made of solder such as tin silver (SnAg).

  Next, a method for manufacturing the acoustic wave device 100 according to the first embodiment will be described. FIG. 4A to FIG. 5C are cross-sectional views illustrating the method for manufacturing the acoustic wave device according to the first embodiment.

  As shown in FIG. 4A, a metal layer mainly composed of aluminum (Al) is formed on the entire upper surface of the piezoelectric substrate 10 by using, for example, a sputtering method, and then the metal layer is patterned by general lithography. Unnecessary portions of the metal layer are removed by etching, and the vibrating portion 11 and the wiring 12 are provided on the piezoelectric substrate 10. Thus, the vibration part 11 and the wiring 12 are made of the same metal material layer. As shown in FIG. 4B, for example, a liquid photosensitive resin 13 a is applied on the piezoelectric substrate 10, the vibration part 11, and the wiring 12. As shown in FIG. 4C, UV (Ultra Violet) is irradiated through a mask 21a to perform exposure processing of the photosensitive resin 13a. UV is blocked at the shaded portion of the mask 21a, and the blank portion is transmitted.

  Through the development process, as shown in FIG. 4D, the portion irradiated with UV remains in the photosensitive resin 13a, and the portion not irradiated with UV is removed. The remaining photosensitive resin 13a pattern is heated and cured at a predetermined temperature for a predetermined time. Thereby, the first sealing portion 13 is selectively formed on the piezoelectric substrate 10. That is, the first sealing portion 13 is formed with the outer peripheral portion of the piezoelectric substrate 10 including the dicing line 18, the vibration portion 11, and a part of the wiring 12 being selectively exposed. Thereby, the vibration part 11 is exposed in the opening 11W, and a part of the wiring 12 is exposed in the opening 12W1. On the other hand, the outer peripheral end of the first sealing portion 13 is separated from the dicing line 18, that is, is separated for each acoustic wave device chip.

Next, as shown in FIG. 4E, the photosensitive resin 14 a attached to the protective film 22 is adhered and laminated on the first sealing portion 13 using, for example, a laminator 23. At this time, since the photosensitive resin 14a is deposited so as to cover the first sealing portion 13, at least the dicing line 18, the vibrating portion 11, and the wiring 12 are covered with the photosensitive resin 14a.

  And as shown to Fig.5 (a), UV is selectively irradiated with respect to the photosensitive resin 14a through the mask 21b, and an exposure process is performed. After removing the protective film 22, a second sealing portion 14 made of a photosensitive resin 14a is formed through a development process as shown in FIG. 5B. Of the photosensitive resin 14a, a portion irradiated with UV remains, and a portion not irradiated with UV is removed. The remaining photosensitive resin 14a pattern is heated and cured at a predetermined temperature for a predetermined time. Thereby, the second sealing portion 14 is selectively formed on the piezoelectric substrate 10. The formed second sealing portion 14 has a planar shape at a position corresponding to the dicing line of the piezoelectric substrate 10 together with the opening 12W2 communicating with the electrode placement opening 12W1 provided in the first sealing portion 13. A rectangular opening 19s is selectively provided. The rectangular opening 19s corresponds to the outer shape of the piezoelectric substrate 10 to be singulated, and at least one is provided on one side thereof.

  Due to the arrangement of the second sealing portion 14, the first sealing portion 13 and the second sealing portion are disposed on the vibrating portion 11 in the cross section along the cutting line AA in FIG. A gap 17 surrounded by the sealing portion 14 is formed. In addition, the piezoelectric substrate 10 is exposed along the dicing line 18 in a rectangular opening 19 s provided in the second sealing portion 14. On the other hand, in the cross section along the cutting line BB in FIG. 3A, the rectangular opening 19s is not located, so that the second sealing portion 14 replaces the first sealing portion 13. It extends over the dicing line 18 beyond.

  Next, as shown in FIG. 5C, the through electrode 15 is formed in the opening 12W2 communicating with the opening 12W1 by, for example, plating. After the through electrode 15 is formed, a solder paste is provided on the through electrode 15 and a solder reflow process is performed to form the electrode 16.

  Thereafter, as shown in FIG. 5D, the piezoelectric substrate 10 and the second sealing portion 14 are cut along the dicing line 18 by a dicing method. As a result, a plurality of separated acoustic wave device chips 100a are formed. By the dicing process, the opening 19s is divided to form the notch 19a or the notch 19b in the second sealing portion 14 of each acoustic wave device chip.

  According to the first embodiment, the photosensitive resin 14a is deposited on the first sealing portion 13, and after the patterning, is heat-treated and cured to form the second sealing portion 14. Since the rectangular opening 19s is provided in the photosensitive resin layer, deformation of the photosensitive resin layer due to heating is prevented / suppressed. Accordingly, the stress applied to the piezoelectric substrate 10 is reduced / relieved, and damage to the piezoelectric substrate 10 itself or the piezoelectric element region is prevented / suppressed. In addition, since the photosensitive resin 14a exists on the dicing line except for the opening 19s, it is possible to suppress foreign matters from falling on the dicing line during the dicing process. Also, the solder reflow process when forming the electrode 16 does not cause stress to the piezoelectric substrate 10 because the heat treatment time is short.

  On the other hand, as described above, the end portion of the first sealing portion 13 is separated from the dicing line 18, that is, separated for each individual acoustic wave device chip 100 a, and is disposed during the dicing process. Is not a target part of the dicing process. Therefore, the dicing process can be performed efficiently. Since the first sealing portions 13 are provided separately from each other, they do not contribute to an increase in stress even during the heating / curing treatment of the photosensitive resin 14a.

  As shown in FIG. 3A, the notch 19 is disposed between the adjacent electrodes 16. Therefore, the distance between the notch 19 and the electrode 16 is large, and the airtightness can be kept high. In addition, since the distance between the notch 19 and the electrode 16 is large as described above, the periphery of the electrode 16 on the upper surface (surface) of the second sealing portion 14, that is, the second sealing portion 14. A relatively wide flat surface is formed around the opening 12W2. As described above, when the electrode 16 is formed by the solder reflow process, in order to obtain a sufficient amount of solder, the solder paste as the electrode material is applied from the upper surface of the through electrode 15 to a relatively wide range around the opening 12W2. Need to be placed. On the other hand, the presence of the relatively wide flat surface facilitates the deposition of a desired amount of solder paste.

  Furthermore, in the first embodiment, as shown in FIG. 3A, the notch 19 is provided corresponding to each side of the piezoelectric substrate 10 after being singulated. Therefore, stress can be more effectively suppressed. Of course, the notch 19 can be arranged along a part of the plurality of sides of the piezoelectric substrate 10, for example, two opposing sides. However, it is preferable that the notches 19 are provided corresponding to the respective sides of the piezoelectric substrate 10 in order to suppress and relieve stress.

  Example 2 is an example in which the shape of the notch 19 shown in FIG. FIG. 6 is a plan view illustrating the acoustic wave device 100K according to the second embodiment, and illustrates the surface acoustic wave device chip after being separated into pieces.

  In the acoustic wave device 100K according to the second embodiment, the corners of the cutout portion 619 of the second sealing portion 14 are surrounded by a dotted line as surrounded by a broken-line circle 20b in FIG. It has an angle (obtuse angle) of 90 ° or more with respect to the outer peripheral end of the portion 13. When forming the notch part 619 including such an obtuse angle part, the planar shape of the opening 19s is a hexagon (not shown). Thus, even when the shape of the notch 619a or 619b is changed, the stress can be suppressed.

  Example 3 is another example in which the shape of the notch 19 shown in FIG. FIG. 7 is a plan view illustrating the acoustic wave device 100 </ b> L according to the third embodiment, and illustrates the surface acoustic wave device chip after being singulated.

  In the acoustic wave device 100L according to the third embodiment, the corner of the notch 719 of the second sealing portion 14 is indicated by a dotted line as surrounded by a broken-line circle 20c in FIG. The outer peripheral end of the portion 13 has an arc shape. When forming the notch 719 including the arcuate portion, the planar shape of the opening 19s is a rectangle having semicircular portions at both ends (not shown). Thus, even when the shape of the notch 719a or 719b is changed, the stress can be suppressed.

  Example 4 is an example in which the notch 19 shown in FIG. 3 has a different pattern. FIG. 8 is a plan view illustrating the acoustic wave device 100M according to the fourth embodiment, and illustrates the surface acoustic wave device chip after being separated into pieces.

  In the acoustic wave device 100M according to the fourth embodiment, the plurality of notches 819 in the second sealing portion 14 are provided on the upper side of the acoustic wave device chip as surrounded by the dashed ellipse 20d in FIG. One convex portion 24 is disposed in the cutout portion 819b. Incidentally, the convex part 24 is not arrange | positioned in the notch part 819b in the lower side. When forming the notch 819 including the convex portion 24, for example, rectangular openings having semicircular portions at both ends are arranged apart from each other along the dicing line (not shown).

  By disposing the convex portion 24 in the notch portion 819 of the selected side, a difference in the plane pattern from the notch portion on the other side occurs, and thus the direction (terminal position) in the acoustic wave device chip. It is possible to improve the efficiency of the test of individual acoustic wave device chips and / or the mounting process on the support substrate. The shape, occupied area, number, and the like of the convex portions 24 are not particularly limited, but are within a range that satisfies the original purpose of providing the notch portion 819, that is, stress reduction / relief during heat treatment is performed. It is necessary to be selected within a range. Further, the location of the convex portion 24 can be selected along the required purpose in addition to the orientation (terminal position).

  In the first to fourth embodiments, the acoustic wave device chip 100a is a SAW device chip. However, the acoustic wave device may be another acoustic wave device chip such as a boundary acoustic wave device, a love wave device chip, and an FBAR device chip. It is good. When using the FBAR, a substrate made of, for example, silicon (Si) is used instead of the piezoelectric substrate 10. Moreover, the vibration part 11 is an area | region with which the upper electrode and lower electrode which pinch | interpose the piezoelectric thin film which consists of a piezoelectric material overlap.

  Although the embodiments of the present invention have been described in detail above, the present invention is not limited to such specific embodiments, and various modifications and changes can be made within the scope of the gist of the present invention described in the claims. It can be changed.

Piezoelectric substrate 10
Vibration unit 11
Wiring 12
First sealing part 13
Second sealing part 14
Electrode 16
Air gap 17
Dicing line 18
Notch 19, 19a, 19b, 19d, 619a, 619b, 719a, 719b, 819a, 819b
Opening 19s
Convex part 24
Elastic wave device 100, 100K, 100L, 100M
Elastic wave device chip 100a

Claims (6)

Providing a first sealing portion for sealing the substrate on which the vibration portion is formed so that the vibration portion for exciting the elastic wave by the piezoelectric body is exposed;
A second sealing portion that covers the vibrating portion so that the vibrating portion is exposed in the air gap and that has a notch formed at a position corresponding to a dicing line for separating the substrate into pieces; Providing on the part;
After the step of providing the second sealing portion, heating the second sealing portion;
A method of manufacturing an acoustic wave device, comprising: cutting and separating the second sealing portion and the substrate in the stacking direction along the dicing line and dividing the second sealing portion and the substrate into acoustic wave device chips. .   2. The method of manufacturing an acoustic wave device according to claim 1, wherein in the step of providing the first sealing portion, the first sealing portion is provided so that the dicing line is exposed. Providing an electrode penetrating the first sealing portion and the second sealing portion;
The step of providing the second sealing portion is a step of providing the second sealing portion so that the cutout portion is formed between the plurality of electrodes. A method of manufacturing an acoustic wave device.   The step of providing the second sealing portion includes the second sealing portion having the cutout portion on each of a plurality of regions serving as sides of the substrate after the substrate is separated into pieces along the dicing line. The method for producing an acoustic wave device according to claim 1, wherein the method is a step of providing an acoustic wave.   5. The step of providing the second sealing portion is a step of providing the second sealing portion such that a plurality of the cutout portions having different shapes are formed. The manufacturing method of the elastic wave device of description. A substrate,
A vibration part provided on the substrate and exciting an elastic wave with a piezoelectric body;
A first sealing portion provided on the substrate such that the vibration portion is exposed in the gap;
And a second sealing portion provided on the first sealing portion so that the vibration portion is exposed to the gap and has a notch in a part of the outer periphery of the substrate. And elastic wave device.

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