JP2012169672A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012169672A JP2012169672A JP2012121393A JP2012121393A JP2012169672A JP 2012169672 A JP2012169672 A JP 2012169672A JP 2012121393 A JP2012121393 A JP 2012121393A JP 2012121393 A JP2012121393 A JP 2012121393A JP 2012169672 A JP2012169672 A JP 2012169672A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000001816 cooling Methods 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 21
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 35
- 229910010271 silicon carbide Inorganic materials 0.000 description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910001006 Constantan Inorganic materials 0.000 description 3
- 230000005679 Peltier effect Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】シリコン半導101に流れる電流を用いてシリコン半導体101を冷却するN型材料102を備える。
【選択図】図1
Description
それぞれのプロセスを数式に表すと下記のようになる。
ジュール熱: η・I2 (2)
ペルチェ熱: α・T・I (3)
ここで、κ, η, αはそれぞれ熱伝導率、電気抵抗率、ゼーベック係数である。
κが小、
ηが低、
αが大
の材料が好適材料になる。例えばビスマス・テルル系の材料が多用され、半導体と言うより不純物を多く入れて金属的な性質にして利用している。条件を定量的に評価するために性能指数Zが導入される。性能指数Zは式(4)で与えられる。
Zが大きいとその材料の性能は高いことを意味する。Zの単位は[T-1]となるので、通常は絶対温度を乗じてZ・Tとして無次元にして評価する。熱流束などの計算ではZTとして入ってきて、Z単独では現れない。
冷却を行うペルチェ素子に接続される電源と、CPUやパワーデバイスの電源とは別電源系統で設けることが多い。これは、動作が全く異なるからである。例えば超伝導システムで利用されるペルチェ電流リード(PCL)(S. Yamaguchi et al, “Peltier current lead experiment and their applications for superconducting magnets”, Rev. Sci. Instrum., vol.75, pp. 207-212, 2004.)では、超伝導マグネットを励磁する電源と電流リードをペルチェ冷却する電源は同じである。同じ電源で冷却にも利用できれば電源システムの節約になる。
Y. Okamoto et al, “Infrared-reflection characterization of sintered SiC thermoelectric semiconductors with the use of a four-component effective medium model”, J. Applied Physics, vol. 85, pp. 6728-6737, 1999.
岡本庸一ほか、「ニッケルとシリコンを二重に添加したシリコンカーバイド焼結半導体の熱電特性」日本金属学会誌 第63巻第11号(1999)1443-1447.)。
本発明の自己冷却方式は、上記ダイオードのPN接合部以外にも、LED(Light Emitting Diode)、半導体レーザ等の素子のPN接合部にも適用できる。該素子を形成するP型素子とN型素子の少なくとも1方の素子に金属層を介して、前記1方の素子とは逆極性の熱電半導体素子を備える。前記P型素子のPN接合部に流れる電流の上流側に金属を介してN型熱電半導体素子を備えた構成としてもよい。あるいは、前記N型素子の前記PN接合部に流れる電流の下流側に金属を介してP型熱電半導体素子を備えた構成としてもよい。
また、上記実施例では、冷却手段(ペルチェ材料)として炭化ケイ素(SiC)を例に説明したが、窒化アルミニウムであってもよい。また、半導体素子がIGBTの場合、IGBTとN型材料(例えば図1の102)との間に金属層を備える。
102 N型材料
Claims (8)
- PN接合を形成するP型素子とN型素子の少なくとも1方の素子に金属層を介して、前記1方の素子とは逆極性の熱電半導体素子を備えた半導体装置。
- PN接合を形成するP型素子とN型素子について、前記P型素子の前記PN接合部に流れる電流の上流側に金属を介してN型熱電半導体素子を備えている請求項1記載の半導体装置。
- PN接合を形成するP型素子とN型素子について、前記N型素子の前記PN接合部に流れる電流の下流側に金属を介してP型熱電半導体素子を備えている請求項1又は2記載の半導体装置。
- PN接合を通して電流が流れるとき、前記熱電半導体素子はペルチェ冷却素子として作用する請求項1乃至3のいずれか一に記載の半導体装置。
- ダイオード、LED(Light Emitting Diode)、半導体レーザのうちの少なくとも1つの半導体素子におけるPN接合を形成するP型素子とN型素子の少なくとも1方の素子に金属層を介して、前記1方の素子とは逆極性の熱電半導体素子を備えた請求項1記載の半導体装置。
- 前記P型素子の前記PN接合部に流れる電流の上流側に金属を介してN型熱電半導体素子を備えている請求項5記載の半導体装置。
- 前記N型素子の前記PN接合部に流れる電流の下流側に金属を介してP型熱電半導体素子を備えている請求項5又は6記載の半導体装置。
- 前記PN接合を通して電流が流れるとき、前記熱電半導体素子はペルチェ冷却素子として作用する請求項5乃至7のいずれか一に記載の半導体装置。
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JP2012121393A JP5324680B2 (ja) | 2007-01-15 | 2012-05-28 | 半導体装置 |
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JP2007072736 | 2007-03-20 | ||
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JP2012121393A JP5324680B2 (ja) | 2007-01-15 | 2012-05-28 | 半導体装置 |
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JP2008000187A Division JP5154234B2 (ja) | 2007-01-15 | 2008-01-04 | 半導体装置 |
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JP5324680B2 JP5324680B2 (ja) | 2013-10-23 |
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JP2012121393A Expired - Fee Related JP5324680B2 (ja) | 2007-01-15 | 2012-05-28 | 半導体装置 |
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Families Citing this family (1)
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JP5453296B2 (ja) * | 2008-10-28 | 2014-03-26 | 株式会社ワイ・ワイ・エル | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515911A (ja) * | 1974-07-03 | 1976-01-19 | Oki Electric Ind Co Ltd | Johotensohoshiki |
JPS515911B1 (ja) * | 1970-12-02 | 1976-02-24 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0364050A (ja) * | 1989-08-01 | 1991-03-19 | Mitsubishi Electric Corp | 半導体装置 |
JPH04280482A (ja) * | 1991-03-08 | 1992-10-06 | Oki Electric Ind Co Ltd | 太陽光を利用した冷却素子 |
JPH07196371A (ja) * | 1993-12-29 | 1995-08-01 | Tonen Corp | 熱電発電素子用SiCの製造方法 |
JP3648756B2 (ja) * | 1994-03-22 | 2005-05-18 | Jsr株式会社 | 半導体素子用コーテイング材 |
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- 2008-01-04 JP JP2008000187A patent/JP5154234B2/ja not_active Expired - Fee Related
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515911B1 (ja) * | 1970-12-02 | 1976-02-24 | ||
JPS515911A (ja) * | 1974-07-03 | 1976-01-19 | Oki Electric Ind Co Ltd | Johotensohoshiki |
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JP2008263164A (ja) | 2008-10-30 |
JP5324680B2 (ja) | 2013-10-23 |
JP5154234B2 (ja) | 2013-02-27 |
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