JP2012163571A - Manufacturing method of scintillator panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a scintillator panel which does not cause increase in deformation of a substrate and is easily handled even when a flexible and enlarged resin substrate is used, does not cause a problem of damage of a phosphor layer and deterioration of image quality due to increase in deformation of the substrate, and is formed by using a flexible resin substrate, and to provide a manufacturing method of the scintillator panel.SOLUTION: The scintillator panel includes a phosphor layer having a thickness of 100 μm or a weight of 45 mg or more per 1 cmon a flexible resin substrate, and the thickness of the flexible resin substrate is set to 75×{a/(10×b)}μm to 1000 μm, where the long side of the flexible resin substrate is a cm and the short side is b cm.

Description

  The present invention relates to a scintillator panel having flexibility and a method for manufacturing the scintillator panel.

  Radiation images such as X-ray images are widely used for diagnosis of medical conditions in the medical field. In recent years, radiation imaging systems using radiation detectors have become widespread. In this system, image data based on two-dimensional radiation by a radiation detector is acquired as an electrical signal, and this signal is processed and displayed on a monitor.

  The scintillator panel plays a role of converting radiation incident from the substrate side into light. An FPD (Flat Panel Detector) developed as a radiographic image capturing apparatus in the 1990s is a radiation detector that combines a scintillator panel and an image sensor. At this time, cesium iodide (CsI) is often used as the material of the scintillator. Since CsI has a relatively high conversion rate from X-rays to visible light and can easily form a columnar crystal structure by vapor deposition, scattering of emitted light can be suppressed by the light guide effect.

  However, in general, the scintillator panel is exposed to CsI vapor at 700 ° C. with a vapor deposition apparatus as shown in FIG. 4 and is deposited upside down, so that the substrate is not deformed, and Al or amorphous having a thickness of about 0.5 mm. Carbon is used. However, the scintillator panel is in contact with the photodiode array of the light receiving element and is pressed from above onto the light receiving element side through the sponge. At this time, if the scintillator panel can be deformed according to the shape of the light receiving element rather than using a substrate that does not deform even when pressed, such as Al or amorphous carbon, the distance between the scintillator and the light receiving element is kept to a minimum, A flat panel detector is obtained in which the light transmission efficiency does not decrease. If the scintillator panel can be deformed according to the uneven shape of the light receiving element (has flexibility), a flat panel detector can be obtained in which the light transmission efficiency does not decrease. Here, the flexibility means that when one side of the four sides of the substrate is fixed, the substrate hangs down by 2 mm or more due to gravity due to the weight of the substrate at a point that is 10 cm away from the fixed side (lower than the height of the fixed side). Refers to things.

  As a technique for making the substrate of the scintillator panel deformable, a technique of using a flexible substrate for the substrate has already been disclosed (see Patent Document 1). However, in this technique, the photodetector itself is also flexibly deformed. In medical use, the same size as the human body is required like FPD, and in the current technology, a photodetector is formed on a glass substrate by utilizing a liquid crystal panel manufacturing technology. In this case, the photodetector itself cannot be deformed.

Japanese Utility Model Publication No. 5-11301

  In response to such problems, the present inventors have studied the development of a scintillator panel free from the above problems by adding flexibility to the substrate only by using a resin substrate as the scintillator panel substrate. However, during the development study, even if a flexible substrate that is the same as a small substrate that did not have a deformation problem was used, the deformation was large with a large substrate. It has been found that other parts hang down, the CsI crystal cracks, and the scintillator panel breaks.

  The present invention has been made in view of the above problems, and the object of the present invention is that even when a large-sized flexible resin substrate is used, the deformation of the substrate does not increase and handling is easy. It is an object of the present invention to provide a scintillator panel using a flexible resin substrate and a method for manufacturing the scintillator panel, which does not have a problem of phosphor layer breakage and image quality deterioration due to large deformation.

The above object of the present invention can be achieved by the following constitution.
1. A scintillator panel in which a phosphor layer having a thickness of 100 μm or more and 1000 μm or less or a weight of 45 mg or more and 675 mg or less per 1 cm ² is provided on a flexible resin substrate, and the phosphor side is a first protective film. A method of manufacturing a scintillator panel, wherein the side is covered with a second protective film, and the first protective film and the second protective film are at least partially in close contact with the scintillator panel. When the one side of the 10 cm square is deformed to 7 mm or less, the long side is acm, and the short side is bcm, the flexible resin substrate A method for manufacturing a scintillator panel, wherein the lower limit of the total thickness of the first and second protective films is set to 75 × {a ² / (10 × b)} ^1/3 μm.

  2. 2. The method of manufacturing a scintillator panel according to 1, wherein both the first protective film and the second protective film are made of polyparaxylylene and are in close contact with the substrate and the phosphor layer, respectively.

  3. The scintillator panel has a transparent insulating film made of a polymer having a glass transition point of 30 to 100 ° C. between the substrate and the phosphor layer, and the phosphor layer is deposited on the transparent insulating film by vapor deposition. 3. The method for producing a scintillator panel according to item 1 or 2, wherein the scintillator panel is formed as a crystal.

  4). 4. The method for manufacturing a scintillator panel according to item 3, wherein the transparent insulating film is formed by applying and drying a polymer dissolved in a solvent.

  According to the present invention, even if a large-sized flexible resin substrate is used, the deformation of the substrate does not become large, the handling is easy, the phosphor layer is damaged due to the large deformation of the substrate, It is possible to provide a scintillator panel using a flexible resin substrate that does not have a problem of image quality deterioration and a method of manufacturing the scintillator panel.

The schematic plan view which shows the example of the scintillator panel of this invention from which a sealing place differs. FIG. 2 is a schematic cross-sectional view along AA ′ in FIG. Explanatory drawing which shows the structure and effect of this invention. The schematic sectional drawing which shows an example of the typical CsI vapor deposition apparatus used for this invention. The schematic sectional drawing which shows an example of the scintillator panel of this invention.

1a to 1c Scintillator panel 101 Scintillator plate 101a, 3 Substrate 101b Phosphor layer 102a, 104 First protective film (first protective film)
102b Second protective film (second protective film)
103a to 103d, 105a, 105b, 107a to 107c Sealing part 108 Polyparaxylylene 2 Evaporating apparatus 201 Vacuum container 202 Evaporation source (resistance heating crucible)
203 Substrate holder 204 Substrate rotation mechanism 205 Vacuum pump (Pump P)

Hereinafter, although the best mode for carrying out the present invention will be described, the present invention is not limited to these.
Hereinafter, the present invention will be described in detail. The scintillator of the present invention has the following configuration. The configuration requirements will be described with reference to FIG.

(substrate)
As the substrate 101a is pressed with a sponge, the scintillator panel is deformed into a shape suitable for the shape of the planar light receiving element surface, and has a flexibility so that uniform sharpness can be obtained over the entire light receiving surface of the radiation flat panel detector. A polymer film is used. A polyimide (PI) or polyethylene naphthalate (PEN) film is preferred from the viewpoint of heat resistance during phosphor layer deposition.

  The flexibility in the resin substrate having flexibility according to the present invention is an arrangement as shown in FIG. 3 and is 2 mm or more at a point 10 cm away from the fixed side when one side of the four sides of the substrate is fixed. It means that the substrate hangs down due to the weight of the substrate itself (becomes lower than the height of the fixed side).

(Reflective layer)
A reflective layer may be used on the phosphor 101b side of the substrate 101a. The reflective layer is for reflecting the light emitted from the substrate toward the light receiving element among the light converted by the phosphor, and increasing the brightness of the scintillator panel. Since it emits to the outside, it can function as a reflective layer, and it is preferable that the conductive metal reflective layer is formed of a metal having high reflectivity in terms of utilization efficiency of emitted light. Usually, a sputtered film of aluminum (Al) is used.

(Transparent insulation film)
A protective film made of a transparent insulating film may be provided between the reflective layer and the phosphor 101b in order to prevent corrosion of the reflective layer metal (for example, Al). The transparent insulating film is preferably formed by applying and drying a resin dissolved in a solvent. It is preferable that the glass transition point is a polymer having a temperature of 30 to 100 ° C. in terms of attaching a film between the deposited crystal and the substrate. Specifically, a polyurethane resin, a vinyl chloride copolymer, a vinyl chloride-vinyl acetate copolymer, Vinyl chloride-vinylidene chloride copolymer, vinyl chloride-acrylonitrile copolymer, butadiene-acrylonitrile copolymer, polyamide resin, polyvinyl butyral, polyester resin, cellulose derivative (nitrocellulose, etc.), styrene-butadiene copolymer, various Synthetic rubber resins, phenol resins, epoxy resins, urea resins, melamine resins, phenoxy resins, silicon resins, acrylic resins, urea formamide resins and the like can be mentioned, and polyester resins are particularly preferable.

  The film thickness of the transparent insulating film is preferably 0.1 μm or more from the viewpoint of adhesion, and preferably 3.0 μm or less from the viewpoint of ensuring the smoothness of the surface of the transparent insulating film. More preferably, the thickness of the transparent insulating film is in the range of 0.2 to 2.5 μm.

  Solvents used for the production of the transparent insulating film include lower alcohols such as methanol, ethanol, n-propanol and n-butanol, hydrocarbons containing chlorine atoms such as methylene chloride and ethylene chloride, ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone, Aromatic compounds such as toluene, benzene, cyclohexane, cyclohexanone, xylene, esters of lower fatty acids and lower alcohols such as methyl acetate, ethyl acetate, butyl acetate, ethers such as dioxane, ethylene glycol monoethyl ester, ethylene glycol monomethyl ester, and Mention may be made of mixtures thereof.

(Phosphor layer)
The phosphor of the phosphor layer 101b according to the present invention absorbs the energy of incident radiation such as X-rays, and changes from 300 nm to 800 nm of electromagnetic waves, that is, from ultraviolet light to infrared light centering on visible light. A phosphor that emits electromagnetic waves (light).

  Various known phosphor materials can be used as the material for forming the phosphor, but the rate of change from X-ray to visible light is relatively high, and the phosphor can be easily formed into a columnar crystal structure by vapor deposition. For this reason, cesium iodide (CsI) is preferable because scattering of emitted light in the crystal can be suppressed by the light guide effect and the thickness of the phosphor layer can be increased. Since only CsI has low luminous efficiency, it is more preferable to add various activators.

  For example, as shown in Japanese Patent Publication No. 54-35060, a mixture of CsI and sodium iodide (NaI) at an arbitrary molar ratio can be mentioned. Further, for example, CsI as disclosed in JP-A-2001-59899 is deposited by vapor deposition of indium (In), thallium (Tl), lithium (Li), potassium (K), rubidium (Rb), sodium ( CsI containing an activator such as Na) is preferred.

In particular, it is preferable to use an activator containing one or more types of thallium compounds and cesium iodide as raw materials. That is, thallium activated cesium iodide (CsI: Tl) is preferable because it has a broad emission wavelength from 400 nm to 750 nm. In the present invention, various thallium compounds (compounds having an oxidation number of + I and + III) can be used as the thallium compound of the activator containing one or more types of thallium compounds. In the present invention, a preferable thallium compound is thallium bromide (TlBr), thallium chloride (TlCl), thallium fluoride (TlF, TlF ₃ ), or the like.

  In the phosphor according to the present invention, the content of the activator is desirably an optimum amount according to the target performance and the like, but is 0.001 to 50 mol% with respect to the content of cesium iodide, and further 0.1 It is preferably ˜10.0 mol%. When the activator is 0.001 mol% or more with respect to cesium iodide, the luminance can be improved, and when it is 50 mol% or less, the properties and functions of cesium iodide can be maintained, which is preferable. .

In the present invention, the phosphor layer according to the present invention has a thickness of 100 μm or a weight of 45 mg or more per 1 cm ² . Preferably not less than 45 mg per 100 μm thickness or 1 cm ² and not more than 675 mg per 1500 μm thickness or 1 cm ^2, not less than 67.5 mg per 150 μm thickness or 1 cm ² ; More preferably, the thickness is 700 μm or the weight per cm ² is 315 mg or less. It is preferable that the weight is not less than 45 mg per 100 μm thickness or 1 cm ² , so that X-ray absorption and phosphor emission amount sufficient to obtain a required image can be obtained, and the thickness per 1500 μm or 1 cm ² is preferable. A weight of 675 mg or less is preferable because it does not absorb 450-700 nm light emitted by absorbing X-rays and does not deteriorate the brightness and resolution of the image due to scattering.

(Protective film (hereinafter also referred to as protective film))
The protective films 102a and 102b are for preventing moisture from the phosphor layer and suppressing deterioration of the phosphor layer, and are made of a film having low moisture permeability. For example, a polyethylene terephthalate film (PET) can be used. Besides PET, a polyester film, a polymethacrylate film, a nitrocellulose film, a cellulose acetate film, a polypropylene film, a polyethylene naphthalate film, or the like can be used. Moreover, according to the required moisture-proof property, it can also be set as the structure which laminated | stacked several vapor deposition films which vapor-deposited metal oxide etc. on these films.

  Moreover, it is preferable that the heat-sealable resin for heat-sealing and sealing each other is used for the mutually opposing surfaces of the scintillator sheet on the substrate side and the phosphor layer side. As the heat sealing layer, a resin film that can be fused with a commonly used impulse sealer can be used. For example, an ethylene vinyl acetate copolymer (EVA), a polypropylene (PP) film, a polyethylene (PE) film, etc. are mentioned, but it is not restricted to this.

  The scintillator sheet can be sealed by sandwiching the scintillator sheet between the upper and lower protective films and fusing the end portions where the upper and lower protective films contact in a reduced pressure atmosphere. Sealing portions are indicated by 103b and 103d. In the present invention, a film is used as a protective film, but an organic film such as polyparaxylylene or an inorganic film having moisture resistance may be deposited. Alternatively, the upper and lower protective films may be deposited in a single film without separately dividing them.

In the present invention, the thickness of the protective film is preferably 10 to 100 μm.
In the present invention, the protective film is provided with moisture resistance. Specifically, the moisture permeability (also referred to as water vapor permeability) of the protective layer is preferably 50 g / m ² · day or less, and more preferably. Is 10 g / m ² · day or less, particularly preferably 1 g / m ² · day or less. Here, the moisture permeability of the protective layer can be measured with reference to a method defined by JIS Z 0208.

Specifically, the moisture permeability in the present invention can be measured by the following method. At 40 ° C., the protective film is used as a boundary surface, and one side is kept dry by using 90% RH (relative humidity) and the other side using a hygroscopic agent. In this state, the mass (g) of water vapor passing through the protective film in 24 hours (converting the protective film to 1 m ² ) is defined as the moisture permeability of the protective film in the present invention.

  From the viewpoint of adjusting the moisture permeability of the protective film to the above range and improving moisture resistance, a polyethylene terephthalate film or a vapor-deposited film in which an alumina oxide thin film is deposited on a polyethylene terephthalate film is preferably used.

(Formation of phosphor layer)
The phosphor layer according to the present invention can be formed by a vapor deposition apparatus schematically shown in FIG. The film thickness of CsI may be a minimum film thickness necessary for X-ray absorption, and it may be 100 to 1000 μm considering that 20 to 125 keV is used for medical use.

(Formation of scintillator panel)
A scintillator sheet provided with a phosphor layer on a substrate is sealed by sandwiching the scintillator sheet between upper and lower protective films and fusing the ends where the upper and lower protective films contact in a reduced pressure atmosphere to form a scintillator panel can do.

1A to 1C are schematic plan views of the scintillator panel of the present invention having different sealing locations.
We have encountered the following difficulties when manufacturing a scintillator panel using the flexible resin substrate of the present invention. First, we deposited 100 μm to 1000 μm of CsI by vapor deposition using a 10 cm square PI (polyimide) 75 μm thick substrate, and sealed the film as shown in FIG. In this case, the PI film (substrate) was not deformed and broken during CsI deposition to film sealing or subsequent assembly work. At this time, the flexibility of the PI film was such that one side of a 10 cm square was pressed down and 10 cm ahead lowered the head by 7 mm.

  However, when an attempt is made to produce a 15 cm square, 20 cm square, or 30 cm square substrate larger than 10 cm, the amount of deformation of the substrate is more than expected even though CsI having the same 100 μm film thickness is deposited. It became bigger. For example, at the time of vapor deposition → sealing handling, the substrate is deformed downward only by holding one side or both sides of the substrate at the time of handling after sealing, and as a result, the CsI columnar crystal is damaged such as a crease, There was a problem that the image quality of the scintillator panel was impaired. CsI is a crystal that grows in the form of a column rather than a film, and this point is also considered to be one of the reasons why CsI was easily deformed.

FIG. 3 examined this. Assuming that the load of W is applied to the tip of the substrate on the long side a and short side b substrates, the relationship of the deflection amount y at that time is
Deflection amount y = (W · a ³ ) / (3 · E · L) Equation (1)
Here, E is the Young's modulus (tensile modulus) of the substrate and is 4.6 × 10 ⁴ kg / cm ² in the case of polyimide. Further, L is a secondary moment of the cross section. In the case of a rectangle as shown in FIG. 3B, if b is a width and h is a thickness, the secondary moment is
^{L = b · h 3/12} ····· formula (2)
It is represented by

Based on equation (1), when a flexible substrate is used, consider the relationship between the size and thickness of the substrate to prevent deformation due to weight addition by the phosphor layer. Now, since the density of CsI is 4.51 g / cm ³ , the weight per unit area of CsI having a film thickness of 100 μm is 45 mg / cm ² . In the present invention, when CsI having a thickness of 100 μm or more is deposited, in order to prevent deformation of a flexible substrate having a size of 10 cm or more so as to damage the CsI layer, how should the thickness of the substrate be set? Is shown. The weight of the phosphor in the range of the present invention is a range in which the substrate is rigid to some extent with a 10 cm substrate, and CsI is not damaged by deformation.

First, since the film thickness of CsI is 100 μm to 1000 μm, the weight of the phosphor layer is (1 cm × 1 cm × 0.01 cm × 4.51 g) considering that the density of CsI is 4.51 g / cm ^3. / Cm ³ = 45.1 mg) / cm ² to (1 cm × 1 cm × 1 cm × 4.51 g / cm ³ = 451 mg) / cm ² , so 45 to 451 mg / cm ² per unit area of CsI Is the weight. When CsI having a weight in this range was deposited on a 10 cm square polyimide substrate, the polyimide substrate was not damaged by flexible deformation during handling.

The deformation amount of the polyimide substrate used at this time was h = 75 μm and y = 7 mm after depositing 600 μm of CsI with a = 10 cm and b = 10 cm. In the experiment using a larger substrate, the deformation of the substrate causes the CsI to be damaged. In the equations (1) and (2), assuming that the size of the substrate is a long side and a short side is b. Substituting equation (2) into (1),
y = (W × a ³ × 4) / (E × b × h ³ ) (3)
y is a physical quantity related to the deformation of the substrate. That is, when y exceeds a certain value, the warpage of the substrate on which CsI is deposited increases, and it is considered that CsI is damaged. Now, assuming that the size of the substrate in equations (1) and (2) is ea on the long side and fb on the short side (the long side is e times and the short side is f times), a in equation (3) Substituting ea for b and fb for b,
y = (W × e ³ × a ³ × 4) / (E × f × b × h ³ ) (4)
It becomes. That is, when the long side is multiplied by e, the warpage amount y increases with the cube of e. Then, when the long side is multiplied by e, what should be done to make the CsI breakage probability the same as before e is multiplied, the ratio of the deformation amount y of the substrate to the ratio of the long side of the substrate is constant. (The deformation amount per unit length may be the same as before the long side is multiplied by e), so y is also multiplied by e, that is, y = e × (W × a ³ × 4) / (E x b x h ³ ) (5)
If it is. In order to make the probability of CsI breakage smaller than before multiplying the long side by e, the value of the right side in equation (4) should be ≦ ey.
ey ≧ (W × e ³ × a ³ × 4) / (E × f × b × h ³ ) (6)
Here, if the thickness h must be multiplied by c to be ch at this time, ch is substituted for h and ey ≧ (W × e ³ × a ³ × 4) / (E × f × b × (Ch) ³ ) Equation (7)
Solving this for (ch) (ch) ³ ≧ (W × e ³ × a ³ × 4) / (E × f × b × (ey)) (8)
Here, substituting equation (3) for y,
(Ch) ³ ≧ e ² × h ³ / f Equation (9)
That is, c ≧ (e ² / f) ^1/3 ... (10)
If the thickness h is increased as shown in FIG. Now, since there is no breakage of CsI on a 10 cm square substrate having a thickness of 75 μm, at least 75 μm as the thickness h may be the lower limit. From this point, when the long side is multiplied by e and the short side is multiplied by f, CsI will be damaged unless the thickness is c ≧ (e ² / f) ^1/3 , so h is 75 × c = 75 × (e ² / f) ^1/3 thickness or more is required. Since e and f are how many times 10 cm, if a and b are expressed in actual lengths in cm, e = a / 10 and f = b / 10 may be used. ,
ch ≧ 75 × {a ² / (10 × b)} ^1/3 μm Equation (11)
It becomes.

The main point of the above formula is that even if a 10 cm square is a resin substrate that can be deformed by 7 mm when one side is held, if the substrate is made a length long, the deformation amount y will be effective by the third power of a according to Equation 3. Occurs at the third power. To multiply this by a (the amount of deformation of the phosphor without film breakage), according to the above discussion,
Film thickness ch = 75 × {a ² / (10 × b)} ^1/3 μm Equation (11)
If the thickness is increased by a factor of c according to the equation (2), the same handling as before can be performed, and damage such as breakage of the phosphor is eliminated.

The upper limit of the thickness of the substrate may be considered by the X-ray absorption rate. In order to secure an X-ray transmittance of about 90% or more in the 20 kV region, the polyimide film thickness may be 1 mm or less.
The present invention has been described above by taking polyimide as an example. In the present invention, examples of the resin substrate having flexibility include polyimide and polyethylene terephthalate (PET). The above consideration can be applied to a resin substrate having an elastic modulus similar to PI. Moreover, these resin substrates are preferable as a support body of a phosphor panel because they are transparent and have good light transmission efficiency. In the present invention, polyimide and polyethylene terephthalate (PET) are particularly preferable.

  In the present invention, as described in claim 2, when the protective film and the substrate are in contact with each other with a certain surface roughness under a reduced pressure atmosphere, the protective film and the substrate are integrated by the frictional force. Therefore, instead of the thickness of the substrate, the sum of the thicknesses of the second protective film in contact with the substrate may be set to h, and the equation (11) may be applied. Then, the CsI layer can be protected from deformation due to flexibility after sealing.

  Further, when a film such as polyparaxylylene that is integrated with the substrate is used as the protective film, the total thickness of the protective film on the phosphor side, the substrate, and the protective film on the substrate side is h, Just apply.

EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated concretely, this invention is not limited to these.
[Example 1]
The polyimide film thickness required for the 20 cm square substrate 101a shown in FIG. 2 was set to 94 μm using the equation (11). Further, another 43 cm square substrate 101a was made to have a polyimide film thickness of 122 μm, and Al (aluminum) was sputtered to 70 nm thereon. Next, in order to prevent corrosion of the reflective layer metal (Al) between the reflective layer and the phosphor 101b, a protective film made of a transparent insulating film (polyester) is provided with a thickness of about 1 μm. Next, the substrate is set in the vapor deposition apparatus shown in FIG.

FIG. 4 shows a cross-sectional view of an example of a schematic CsI vapor deposition apparatus. CsI was filled in a resistance heating crucible 202 made of Ta. Next, the polyimide resin substrate 3 is mechanically fixed to a 10 mm thick Al plate support 203 and rotated. Next, the distance between the support and the resistance heating crucible (evaporation source) was adjusted to 400 mm. Subsequently, after the inside of the vapor deposition apparatus was evacuated with a pump P (vacuum pump), Ar gas was introduced to adjust the degree of vacuum to 0.5 Pa. Next, while rotating the support at a speed of 10 rpm, the temperature of the support was maintained at 200 ° C., and then the resistance heating crucible was heated to deposit the phosphor, and the thickness of the phosphor layer was 600 μm. By the way, vapor deposition was finished. Thereafter, the substrate 3 with 600 μm (270 mg / cm ² ) of CsI phosphor is peeled off from the vapor deposition apparatus and moved to the protective film production apparatus. When holding only one side of the substrate due to handling problems during the peeling process or moving process, or holding only two opposite sides, a 20 cm square 75 μm thick substrate is compared to a 10 cm square 75 μm thick substrate, From the formulas (1) and (2), the length of a ³ / b = 2 squared 2 ² = 4 times deforms, and if it is 43 cm square, (4.3) ² = 18 times deforms, so the substrate is bent. As a result, the CsI layer is scratched and causes image defects. In the present invention, the thickness of the substrate is scaled according to the equation (11) so that the deformation amount of the substrate is proportional to the length regardless of whether it is 20 cm or 43 cm. By making the ratio constant with respect to the size of the substrate, the rate of substrate deformation is made constant, and scratches are prevented from occurring in CsI.

  Next, a protective film is formed. As the protective film 102a (first protective film) on the phosphor layer side, a laminated film of PET (polyethylene terephthalate film) and CPP (casting polypropylene) is used. The lamination method of the laminated film was dry lamination, and the thickness of the adhesive layer was 1 μm. The adhesive used is a two-component reaction type urethane adhesive. The same protective film 102b (second protective film) on the substrate side was used. The protective film arranged above and below was sealed (103b, 103d) by fusing the peripheral edge with an impulse sealer to produce a scintillator panel (1a). FIG. 2 shows a cross-sectional view thereof. FIG. 1 (a) is a plan view of the scintillator panel (1a) with four sealing locations, FIG. 1 (b) is a plan view of the scintillator panel (1b) with two sealing locations. FIG. 1C shows a plan view of the scintillator panel (1c) having three sides as the side.

[Example 2]
In this embodiment, the other steps are the same as in the first embodiment, but the second protective film on the substrate side and the back surface of the substrate are set to 0.05 to 5.0 μm in Ra. Further, the peripheral edge is fused using an impulse sealer under a reduced pressure of 1000 Pa. The film is a laminated film of 70 μm of PET (polyethylene terephthalate film) and CPP (casting polypropylene). Thus, in FIG. 2, the protective film 102b and the substrate 101a can be regarded as a single substrate without shifting even when a force is applied to the left and right. In this case, if the second protective film and the substrate are regarded as one substrate and the average Young's modulus of the second protective film and the substrate is E, E satisfies (3). What is necessary is just to set the total thickness of a film and a board | substrate.

  The present invention has the effect of preventing the occurrence of CsI scratches due to the deformation of the substrate after sealing by suppressing the deformation of the substrate to a 10 cm square scintillator level. The thickness of the substrate is reduced to the second protective film (70 μm). Can be reduced by the amount of That is, for a 43 cm square substrate, in the first embodiment, 122 μm was required but 52 μm is sufficient.

[Example 3]
In this embodiment, the other steps before the deposition of the protective film are the same as those in the first embodiment, but the protective film is deposited by a polyparaxylylene vapor deposition method. For example, when polyparaxylylene having a thickness of 10 μm is deposited, the polyparaxylylene adheres to the substrate or the phosphor. Therefore, assuming that this thickness, for example, 10 μm on the phosphor and 5 μm on the back of the substrate, In FIG. 5, the protective film 108 and the substrate 101a can be regarded as a single substrate without shifting even when a force is applied to the left and right. In this case, if the protective film 108 and the substrate 101a are regarded as one substrate, and the average Young's modulus of the protective film and the substrate is E, E and (3) are satisfied with respect to E. What is necessary is just to set the total thickness.

  The present invention has the effect of preventing the generation of CsI scratches due to the deformation of the substrate after sealing by suppressing the deformation of the substrate to a 10 cm square scintillator level. The thickness of the substrate is divided by the upper and lower protective film thicknesses. (Here 15 μm) can be reduced. That is, for a 43 cm square substrate, 107 μm may be used instead of 122 μm in Example 1.

  As apparent from Examples 1 to 3, according to the present invention, even when a large-sized flexible resin substrate is used, the deformation of the substrate does not increase, handling is easy, and the deformation of the substrate is large. There are provided a scintillator panel using a flexible resin substrate and a method for manufacturing the scintillator panel, which are free from problems such as breakage of a phosphor layer (preferably a CsI phosphor layer) and deterioration of image quality. You can see that

Claims (4)

A scintillator panel in which a phosphor layer having a thickness of 100 μm or more and 1000 μm or less or a weight of 45 mg or more and 675 mg or less per 1 cm ² is provided on a flexible resin substrate, and the phosphor side is a first protective film. A method of manufacturing a scintillator panel, wherein the side is covered with a second protective film, and the first protective film and the second protective film are at least partially in close contact with the scintillator panel. When the one side of the 10 cm square is deformed to 7 mm or less, the long side is acm, and the short side is bcm, the flexible resin substrate A method for manufacturing a scintillator panel, wherein the lower limit of the total thickness of the first and second protective films is set to 75 × {a ² / (10 × b)} ^1/3 μm.   2. The method of manufacturing a scintillator panel according to claim 1, wherein both the first protective film and the second protective film are made of polyparaxylylene and are in close contact with the substrate and the phosphor layer, respectively.   The scintillator panel has a transparent insulating film made of a polymer having a glass transition point of 30 to 100 ° C. between the substrate and the phosphor layer, and the phosphor layer is deposited on the transparent insulating film by vapor deposition. The scintillator panel manufacturing method according to claim 1, wherein the scintillator panel is formed as a crystal.   The scintillator panel manufacturing method according to claim 3, wherein the transparent insulating film is formed by applying and drying a polymer dissolved in a solvent.

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