JP2012155007A - Liquid crystal device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suitably detect the temperature of a device with a simple configuration in a liquid crystal device.SOLUTION: A liquid crystal device comprises a pair of substrates (10, 20) which are bonded together via a sealant (52), a liquid crystal (50) interposed between the pair of substrates and temperature sensitive wiring (200) which is disposed along at least one side of at least one of the substrates and disposed on a position overlapping with the sealant in a plan view. The temperature sensitive wiring is constituted as wiring capable of detecting a temperature and can suitably detect the temperature of a device.

Description

  The present invention relates to a technical field of a liquid crystal device and an electronic apparatus including the liquid crystal device, such as a liquid crystal projector.

  As this type of liquid crystal device, for example, there is a device that displays an image by modulating incident light with liquid crystal. It is known that the liquid crystal changes in optical characteristics (for example, refractive index, dielectric constant, elastic coefficient, viscosity, etc.) according to temperature. For this reason, for example, Patent Document 1 proposes an apparatus including a temperature sensor.

JP 2006-201784 A

  However, in the technique described above, new elements (specifically, sensor control electrodes, sensor input electrodes, and sensor output electrodes) are formed on the substrate as temperature sensors. For this reason, even if the temperature change of the apparatus can be detected using the temperature sensor, the temperature sensor is built in, so that there is a possibility that the apparatus configuration and the manufacturing process may be complicated and the manufacturing cost may be increased. There are technical problems.

  The present invention has been made in view of the above-described problems, for example, and an object of the present invention is to provide a liquid crystal device and an electronic apparatus that can detect the temperature of the device with a simple configuration.

  In order to solve the above problems, a liquid crystal device according to the present invention is disposed along at least one side of a pair of substrates bonded via a sealing material, a liquid crystal sandwiched between the pair of substrates, and the one substrate. And a temperature-sensitive wiring arranged at a position overlapping the sealing material when seen in a plan view.

  The liquid crystal device of the present invention includes a pair of substrates whose four sides are bonded to each other via a sealing material. The pair of substrates is formed as an element substrate on which various elements such as a pixel electrode and a transistor are formed and a counter substrate on which a counter electrode is formed. Liquid crystal is sandwiched between a pair of substrates, and light incident on the device is modulated according to the alignment direction of the liquid crystal molecules. The sealing material is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like, and is disposed along the four sides of the substrate.

  Here, in particular, the above-described temperature sensitive wiring is arranged along at least one side of the four sides. Further, the temperature sensitive wiring is arranged at a position overlapping the sealing material when the substrate is seen in a plan view. Since the region overlapping with the sealing material is a region where no liquid crystal exists (that is, a region that does not contribute to display), the temperature sensitive wiring is arranged at a position overlapping with the sealing material, so that the temperature sensing region is not widened and the temperature sensing region is not widened. Wiring can be arranged.

  The temperature sensitive wiring is configured to be able to detect the temperature, for example, by flowing a predetermined current. Therefore, the temperature of the apparatus can be detected by using the temperature sensitive wiring. The temperature detected by the temperature-sensitive wiring is affected by heat generated in, for example, an in-seal area (in other words, a display area) where liquid crystal is arranged, a peripheral drive circuit, and the like. Therefore, the temperature detected by the temperature sensitive wiring can be regarded as the temperature of the entire apparatus.

  The optical characteristics of the liquid crystal change according to the temperature change. Therefore, if the temperature change of the apparatus is not taken into account, the reliability and display quality may be deteriorated. However, in the present invention, since the temperature of the apparatus can be detected by the temperature sensitive wiring, the apparatus can be controlled according to the temperature change. For example, when it is determined that the responsiveness of the liquid crystal is poor from the detected temperature, control is performed so as to supply a steeper pulse as a signal for displaying an image.

  As described above, according to the liquid crystal device of the present invention, the temperature of the device can be suitably detected with a simple configuration.

  In one aspect of the liquid crystal device of the present invention, the temperature-sensitive wiring is formed in a film shape including a conductive material on one of the pair of substrates, and detects temperature according to a change in resistance. .

  According to this aspect, the film-like temperature-sensitive wiring including a conductive material such as aluminum is formed on one of the pair of substrates. The “film-like” here means not only a solid-like wiring but also a form similar to a film-like shape in plan view, as in the case where the meandering wiring is wired at a high density. It is a broad concept that includes a configuration that can be regarded as a

  The resistance of the temperature-sensitive wiring changes depending on the temperature change. For this reason, it is possible to detect temperature using the resistance of the temperature sensitive wiring. Specifically, for example, the resistance of the temperature sensitive wiring can be detected by flowing a predetermined current from the external circuit to the temperature sensitive wiring. Then, the temperature can be estimated from the detected resistance value.

  Here, in particular, the temperature-sensitive wiring described above is arranged so as to at least partially overlap the sealing material when seen in a plan view. Since the region overlapping with the sealant is a region where no liquid crystal exists (that is, a region that does not contribute to display), a metal wiring or the like having a light shielding property is almost always disposed. Therefore, even if a temperature-sensitive wiring including a conductive material is arranged, the operation of the apparatus is not affected. Moreover, the metal wiring already provided in the apparatus can be used as the temperature sensitive wiring as it is. Therefore, it is possible to suppress the complexity of the device configuration and the manufacturing process and the increase in manufacturing cost.

  According to the temperature sensitive wiring described above, it is possible to detect the temperature of the apparatus suitably with a simple configuration.

  In one embodiment of the liquid crystal device of the present invention, the one substrate is provided with a scan line, a data line, a transistor provided corresponding to the intersection of the scan line and the data line, and corresponding to the transistor. A plurality of conductive layers including pixel electrodes are formed so as to be laminated, and the temperature sensitive wiring is formed in the same layer as any one of the plurality of conductive layers.

  According to this aspect, a plurality of conductive layers that are scanning lines, data lines, transistors, and pixel electrodes are stacked on one substrate. That is, one substrate is an element substrate, and the liquid crystal device according to the present embodiment can realize active matrix driving by transistor switching control. In addition to the various wirings and elements described above, the plurality of conductive layers may include, for example, a capacitor electrode that forms a storage capacitor, a relay layer that relays electrical connection of each layer, and the like.

  The temperature sensitive wiring according to this aspect is formed in the same layer as any one of the plurality of conductive layers formed on one substrate. Here, “the same layer” means that they are formed by the same film forming process. The temperature-sensitive wiring is formed, for example, by forming a conductive film on one substrate and then partially removing the conductive film and dividing it from each other.

  According to the temperature-sensitive wiring described above, it can be formed by the same film forming process as the plurality of conductive layers, so that it is not necessary to increase the manufacturing process. Therefore, it is possible to reliably suppress the complexity of the manufacturing process and the increase in manufacturing cost.

  In the aspect including the plurality of conductive layers described above, the temperature sensitive wiring may be configured to be formed in the same layer as the layer having the highest density when viewed in plan among the plurality of conductive layers. Good.

  In this case, a conductive layer is formed at a relatively high density in the same layer as the temperature-sensitive wiring. Therefore, heat generated in the liquid crystal, the peripheral drive circuit, and the like is efficiently transmitted to the temperature sensitive wiring. As a result, the temperature of the temperature sensitive wiring is close to the heat generation source. Therefore, the temperature of the apparatus can be detected more accurately.

  Even if the conductive layer, which is the same layer as the temperature sensitive wiring, is not the highest density layer, the above-described effects can be obtained as long as the density is higher than other layers.

  In another aspect of the liquid crystal device of the present invention, the temperature sensitive wiring includes a light-shielding material.

  According to this aspect, since the temperature-sensitive wiring is formed including a light-shielding material such as aluminum, light shielding in a region overlapping with the sealing material can be realized by the temperature-sensitive wiring. Accordingly, it is possible to suppress a decrease in display quality due to light leakage or the like. Further, since it is not necessary to provide another light shielding film, it is possible to prevent the apparatus configuration and the manufacturing process from becoming complicated.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described liquid crystal device according to the present invention (including various aspects thereof).

  According to the electronic device of the present invention, since the above-described liquid crystal device according to the present invention is provided, high-quality display is possible, and a reliable projection display device, a television, a mobile phone, an electronic notebook, Various electronic devices such as a word processor, a viewfinder type or a monitor direct view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

  The effect | action and other gain of this invention are clarified from the form for implementing invention demonstrated below.

It is a top view which shows the whole structure of the liquid crystal device which concerns on embodiment. It is the HH 'sectional view taken on the line of FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like that constitute an image display area of the liquid crystal device according to the embodiment. It is sectional drawing which shows the structure of the pixel part of the liquid crystal device which concerns on embodiment. It is a top view which shows the arrangement | positioning area | region of a temperature sensitive wiring. It is sectional drawing which shows simply the laminated structure of a temperature sensitive wiring. It is a top view which shows the structure of the projector which is an example of the electronic device to which a liquid crystal device is applied.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Liquid crystal device>
The liquid crystal device according to this embodiment will be described with reference to FIGS. In the following embodiments, a liquid crystal device of a TFT (Thin Film Transistor) active matrix drive type with a built-in drive circuit will be described as an example of the liquid crystal device of the present invention.

  First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the overall configuration of the liquid crystal device according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line HH ′ of FIG.

  1 and 2, in the liquid crystal device according to the present embodiment, a TFT array substrate 10 and an opposite substrate 20 which are an example of “a pair of substrates” of the present invention are arranged to face each other. The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, a silicon substrate, or the like. The counter substrate 20 is a transparent substrate such as a quartz substrate or a glass substrate. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between a pair of alignment films.

  The TFT array substrate 10 and the counter substrate 20 are bonded to each other by a sealing material 52 provided in a sealing region located around the image display region 10a provided with a plurality of pixel electrodes.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance between the TFT array substrate 10 and the counter substrate 20 (that is, the inter-substrate gap) to a predetermined value is dispersed. Note that the gap material may be arranged in the image display region 10a or a peripheral region located around the image display region 10a in addition to or instead of the material mixed in the seal material 52.

  In the liquid crystal device according to the present embodiment, in particular, a temperature-sensitive wiring capable of detecting the temperature according to the resistance is provided in a seal region that overlaps the above-described sealing material in a planar manner. In FIG. 1, for convenience of explanation, illustration of the temperature sensitive wiring is omitted, but a specific configuration of the temperature sensitive wiring will be described in detail later.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. A part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in the peripheral area located around the image display area 10a. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display region 10 a in this way, a plurality of the pixel lines are covered along the remaining side of the TFT array substrate 10 and covered with the frame light shielding film 53. Wiring 105 is provided.

  In a region facing the four corners of the counter substrate 20 on the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with a vertical conduction material are arranged. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which pixel switching TFTs as drive elements, wiring lines such as scanning lines and data lines are formed is formed. Although the detailed configuration of this laminated structure is not shown in FIG. 2, pixel electrodes 9a made of a transparent material such as ITO (Indium Tin Oxide) are provided on the laminated structure with a predetermined pattern for each pixel. It is formed in an island shape.

  The pixel electrode 9 a is formed in the image display area 10 a on the TFT array substrate 10 so as to face the counter electrode 21. On the surface of the TFT array substrate 10 facing the liquid crystal layer 50, that is, on the pixel electrode 9a, an alignment film 16 is formed so as to cover the pixel electrode 9a.

  A light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. For example, the light shielding film 23 is formed in a lattice shape when viewed in plan on the facing surface of the facing substrate 20. In the counter substrate 20, a non-opening area is defined by the light shielding film 23, and an area partitioned by the light shielding film 23 is an opening area through which light emitted from, for example, a projector lamp or a direct viewing backlight is transmitted. The light shielding film 23 may be formed in a stripe shape, and the non-opening region may be defined by the light shielding film 23 and various components such as data lines provided on the TFT array substrate 10 side.

  On the light shielding film 23, a counter electrode 21 made of a transparent material such as ITO is formed so as to face the plurality of pixel electrodes 9a. Further, in order to perform color display in the image display area 10a, a color filter (not shown in FIG. 2) may be formed on the light shielding film 23 in an area including a part of the opening area and the non-opening area. Good. An alignment film 22 is formed on the counter electrode 21 on the counter surface of the counter substrate 20.

  In addition to the above-described drive circuits such as the data line drive circuit 101 and the scanning line drive circuit 104, the image signal on the image signal line is sampled on the TFT array substrate 10 shown in FIGS. Sampling circuit for supplying lines, precharge circuit for supplying precharge signals of a predetermined voltage level to a plurality of data lines in advance of image signals, and inspecting the quality, defects, etc. of the liquid crystal device during manufacturing or at the time of shipment An inspection circuit or the like may be formed.

  Next, an electrical configuration of the pixel portion of the liquid crystal device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the liquid crystal device according to this embodiment.

  In FIG. 3, a pixel electrode 9a and a TFT 30 are formed in each of a plurality of pixels formed in a matrix that forms the image display region 10a. The TFT 30 is electrically connected to the pixel electrode 9a, and performs switching control of the pixel electrode 9a during the operation of the liquid crystal device according to the present embodiment. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. May be.

  The scanning line 3a is electrically connected to the gate of the TFT 30, and the liquid crystal device according to the present embodiment pulse-scans the scanning signals G1, G2,..., Gm to the scanning line 3a at a predetermined timing. Are applied in a line-sequential order in this order. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6a is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing. A predetermined level of image signals S1, S2,..., Sn written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a is held for a certain period with the counter electrode formed on the counter substrate. The

  The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2) modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. For example, in the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel. In the normally black mode, the transmittance is applied in units of each pixel. As a result, the transmittance for incident light is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21 (see FIG. 2). The storage capacitor 70 is a capacitive element that functions as a storage capacitor that temporarily holds the potential of each pixel electrode 9a in response to supply of an image signal. According to the storage capacitor 70, the potential holding characteristic of the pixel electrode 9a is improved, and the display characteristics such as improvement of contrast and reduction of flicker can be improved.

  Next, a specific configuration of the pixel portion that realizes the above-described operation will be described with reference to FIG. FIG. 4 is a cross-sectional view showing the configuration of the pixel portion of the liquid crystal device according to this embodiment. In FIGS. 4 and 5, the scale of each layer / member is different for each layer / member to have a size that can be recognized on the drawing. In FIG. 4, for convenience of explanation, illustration of a portion located above the pixel electrode 9a is omitted.

  In FIG. 4, a TFT 30 which is an example of the “transistor” of the present invention is formed on the TFT array substrate 10. The TFT 30 includes a semiconductor layer 1a and a gate electrode 3b electrically connected to the scanning line 3a.

  The semiconductor layer 1a is made of, for example, polysilicon, and has a channel region 1a ′ having a channel length along the Y direction, a data line side LDD region 1b, a pixel electrode side LDD region 1c, a data line side source / drain region 1d, and a pixel electrode side. It consists of a source / drain region 1e. That is, the TFT 30 has an LDD structure.

  The data line side source / drain region 1d and the pixel electrode side source / drain region 1e are formed substantially in mirror symmetry along the Y direction with respect to the channel region 1a '. The data line side LDD region 1b is formed between the channel region 1a 'and the data line side source / drain region 1d. The pixel electrode side LDD region 1c is formed between the channel region 1a 'and the pixel electrode side source / drain region 1e. The data line side LDD region 1b, the pixel electrode side LDD region 1c, the data line side source / drain region 1d, and the pixel electrode side source / drain region 1e are formed by implanting impurities into the semiconductor layer 1a by an impurity implantation such as an ion implantation method. This is an impurity region. The data line side LDD region 1b and the pixel electrode side LDD region 1c are formed as low concentration impurity regions with less impurities than the data line side source / drain region 1d and the pixel electrode side source / drain region 1e, respectively. According to such an impurity region, when the TFT 30 is not operating, the off-current flowing between the source region and the drain region can be reduced, and a decrease in the on-current flowing when the TFT 30 is operating can be suppressed. The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which no impurity implantation is performed in the data line side LDD region 1b and the pixel electrode side LDD region 1c. A self-alignment type in which the data line side source / drain region and the pixel electrode side source / drain region are formed by implanting the concentration may be used.

  The gate electrode 3b is made of, for example, conductive polysilicon, and is electrically connected to the scanning line 3a through a contact hole (not shown). The gate electrode 3b and the semiconductor layer 1a are insulated by the gate insulating film 2.

  In FIG. 4, a scanning line 3 a is provided on the lower layer side through the base insulating film 12 than the TFT 30 on the TFT array substrate 10. The scanning line 3a includes, for example, at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), and Pd (palladium). It is made of a light shielding material such as a simple metal, an alloy, a metal silicide, a polysilicide, or a laminate of these. Thereby, the scanning line 3a is reflected from the back surface of the TFT array substrate 10 or light emitted from another liquid crystal device by a multi-plate projector or the like and penetrates the composite optical system from the TFT array substrate 10 side. It also functions as a lower light-shielding film that shields the channel region 1a ′ of the TFT 30 and its periphery from the return light incident on the TFT 30.

  The base insulating film 12 has a function of insulating the TFT 30 from the scanning line 3a as an interlayer, and is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 is roughened during polishing, dirt remaining after cleaning, and the like. Thus, the pixel switching TFT 30 has a function of preventing deterioration of characteristics.

  In FIG. 4, a storage capacitor 70 is provided above the TFT 30 on the TFT array substrate 10 via the first interlayer insulating film 41.

  The storage capacitor 70 is formed by disposing the lower capacitor electrode 71 and the upper capacitor electrode 300a so as to face each other with the dielectric film 75 therebetween.

  The upper capacitor electrode 300 a is formed as a part of the capacitor line 300. The capacitance line 300 extends from the image display area 10a where the pixel electrode 9a is disposed to the periphery thereof. The upper capacitor electrode 300a is a fixed potential side capacitor electrode that is electrically connected to a constant potential source via the capacitor line 300 and maintained at a fixed potential. The upper capacitor electrode 300a is formed of a non-transparent metal film containing a metal or alloy such as Al (aluminum) or Ag (silver), for example, and also functions as an upper light shielding film (built-in light shielding film) that shields the TFT 30. To do. The upper capacitor electrode 300a is formed by laminating a single metal, an alloy, a metal silicide, a polysilicide, or the like including at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pd. You may be comprised from things. In this case, the function of the upper capacitor electrode 300a as a built-in light shielding film can be enhanced.

  The lower capacitor electrode 71 is a pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 1e of the TFT 30 and the pixel electrode 9a. More specifically, the lower capacitor electrode 71 is electrically connected to the pixel electrode side source / drain region 1 e through the contact hole 83 and electrically connected to the relay layer 93 through the contact hole 84. Yes. Further, the relay layer 93 is electrically connected to the pixel electrode 9 a through the contact hole 85. That is, the lower capacitor electrode 71 relays the electrical connection between the pixel electrode side source / drain region 1e and the pixel electrode 9a together with the relay layer 93. The lower capacitor electrode 71 is made of conductive polysilicon. Therefore, the storage capacitor 70 has a so-called MIS structure. The lower capacitance electrode 71 has a function as a light absorption layer or a light shielding film disposed between the upper capacitance electrode 300a as the upper light shielding film and the TFT 30 in addition to the function as the pixel potential side capacitance electrode.

  The dielectric film 75 is, for example, a single layer structure or a multilayer structure formed of a silicon oxide (SiO 2) film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film, or a silicon nitride (SiN) film. have.

  The lower capacitor electrode 71 may be formed of a metal film in the same manner as the upper capacitor electrode 300a. That is, the storage capacitor 70 may be formed to have a so-called MIM structure having a three-layer structure of metal film-dielectric film (insulating film) -metal film. In this case, compared to the case where the lower capacitor electrode 71 is formed using conductive polysilicon or the like, the power consumption of the entire liquid crystal device can be reduced when the liquid crystal device is driven, and each pixel unit can be reduced. The device can be operated at high speed.

  In FIG. 4, a data line 6 a and a relay layer 93 are provided on the upper layer side of the storage capacitor 70 on the TFT array substrate 10 via the second interlayer insulating film 42.

  The data line 6a is electrically connected to the data line side source / drain region 1d of the semiconductor layer 1a through a contact hole 81 penetrating the first interlayer insulating film 41 and the second interlayer insulating film. The data line 6a and the inside of the contact hole 81 are made of, for example, an Al (aluminum) -containing material such as Al—Si—Cu or Al—Cu, Al alone, or a multilayer film including an Al layer and a TiN layer. The data line 6a also has a function of shielding the TFT 30 from light.

  The relay layer 93 is formed on the second interlayer insulating film 42 in the same layer as the data line 6a. For the data line 6a and the relay layer 93, a thin film made of a conductive material such as a metal film is formed on the second interlayer insulating film 42 by using a thin film forming method, and the thin film is partially removed. It forms in the state mutually spaced apart by patterning. Therefore, since the data line 6a and the relay layer 93 can be formed in the same process, the manufacturing process of the device can be simplified.

  In FIG. 4, the pixel electrode 9a is formed on the upper layer side through the third interlayer insulating film 43 relative to the data line 6a. The pixel electrode 9a is electrically connected to the pixel electrode side source / drain region 1e of the semiconductor layer 1a through the lower capacitor electrode 71, the contact holes 83, 84 and 85, and the relay layer 93. The contact hole 85 is formed by depositing a conductive material constituting the pixel electrode 9a such as ITO on the inner wall of a hole formed so as to penetrate the interlayer insulating layer 43. An alignment film subjected to a predetermined alignment process such as a rubbing process is provided on the upper surface of the pixel electrode 9a.

  The configuration of the pixel portion described above is common to each pixel portion, and such pixel portions are periodically formed in the image display region 10a (see FIG. 1). Note that the scanning line 3a, the data line 6a, the storage capacitor 70, the lower light shielding film 11a, the relay layer 93, and the TFT 30 described above are arranged on each TFT corresponding to the pixel electrode 9a in plan view on the TFT array substrate 10. It is arranged in a non-opening region surrounding the opening region (that is, a region where light actually contributing to display is transmitted or reflected in each pixel). That is, the scanning line 3a, the data line 6a, the storage capacitor 70, the relay layer 93, the lower light shielding film 11a, and the TFT 30 are not in the opening area of each pixel but in the non-opening area so as not to disturb the display. Has been placed.

  Next, the temperature sensitive wiring provided in the liquid crystal device according to the present embodiment will be described with reference to FIGS. FIG. 5 is a plan view showing an arrangement region of the temperature sensitive wiring. FIG. 6 is a cross-sectional view schematically showing the laminated structure of the temperature sensitive wiring. In FIGS. 5 and 6, for convenience of explanation, detailed members constituting the liquid crystal device shown in FIGS. 1 and 4 are omitted as appropriate.

  In FIG. 5, the liquid crystal device according to the present embodiment is provided with a temperature-sensitive wiring arrangement region 200 a in a sealing region that overlaps with the sealing material 52. A film-like temperature-sensitive wiring 200 including a metal material such as aluminum is provided in the temperature-sensitive wiring arrangement region 200a. The temperature-sensitive wiring 200 may be a solid wiring that fills the temperature-sensitive wiring arrangement area 200a, or may be a wiring that meanders the temperature-sensitive wiring arrangement area 200a at a high density. That is, the shape of the temperature-sensitive wiring 200 is not limited as long as it has a function of detecting a temperature described later. However, if the temperature-sensitive wiring 200 is formed so as to fill the temperature-sensitive wiring arrangement region 200a, the temperature-sensitive wiring 200 can function as a light shielding film.

  In FIG. 6, the above-described temperature-sensitive wiring 200 is provided in the same layer as the first driver wiring portion 410 in the driver region where the data line driving circuit 101 and the scanning line driving circuit 104 are provided.

  In the driver region, a transistor portion 35, a first driver wiring portion 410, and a second driver portion 420 are provided in order from the lower layer side. The transistor portion 35 includes a transistor that performs switching control in each driver, and is provided in the same layer as the TFT 30 (see FIG. 4) in the pixel portion. The first driver wiring portion 410 is provided in the same layer as the lower capacitor electrode 71 (see FIG. 4) in the pixel portion. The second driver wiring portion 420 is provided in the same layer as the capacitor electrode layer 300a in the pixel portion.

  In the seal region where the temperature sensitive wiring 200 is provided, a temperature sensitive wiring 200, a first COM wiring 510, and a second COM wiring 520 are provided in order from the lower layer side. The first COM wiring 510 is a wiring that transmits a potential supplied to the counter substrate 20 side, and is provided in the same layer as the second driver wiring portion 520 in the driver region (that is, the same layer as the capacitor electrode layer 300a in the pixel portion). ing. Similar to the first COM wiring 510, the second COM wiring 520 is a wiring that transmits a potential supplied to the counter substrate 20, and is provided in the same layer as the data line 6a (see FIG. 4) in the pixel portion.

  The temperature-sensitive wiring 200 is a state in which, after forming a thin film made of a conductive material such as a metal film, the thin film is partially removed, that is, patterned to be separated from the first driver wiring portion 410. Formed with. In this way, since the temperature-sensitive wiring 200 can be formed in the same process as the first driver wiring part 410 and the lower capacitor electrode 71 in the pixel part, the manufacturing process of the device can be simplified.

  Note that the temperature-sensitive wiring 200 is not necessarily formed in the same layer as the first driver wiring portion 410, and may be formed in the same layer as other conductive layers. For example, the temperature-sensitive wiring 200 may be provided at the position of the first COM wiring 510 or the second COM wiring 520 in FIG. However, the temperature-sensitive wiring 200 is preferably formed in the same layer as the conductive layer having a relatively high density. In this case, since the thermal conductivity to the temperature-sensitive wiring 200 is increased, the temperature detection function described later can be made more accurate.

  Since the temperature-sensitive wiring 200 is configured to include a metal such as aluminum, for example, the resistance changes due to a temperature change. For this reason, it is possible to detect the temperature using the resistance of the temperature-sensitive wiring 200. Specifically, the resistance of the temperature sensitive wiring 200 can be detected by flowing a predetermined current from the external circuit to the temperature sensitive wiring 200, for example. Then, the temperature can be estimated from the detected resistance value. In the external circuit, the temperature is detected using, for example, a table showing the relationship between the detected resistance value and temperature. Alternatively, the temperature is calculated using a mathematical formula set in advance.

  The temperature detected by the temperature-sensitive wiring 200 is affected by heat generated in, for example, the image display region 10a in which the liquid crystal layer 50 is disposed, a peripheral driving circuit, or the like. Therefore, the temperature detected by the temperature sensitive wiring 200 can be regarded as the temperature of the entire apparatus.

  The liquid crystal layer 50 changes in optical characteristics according to a temperature change. Therefore, if the temperature change of the apparatus is not taken into account, the reliability and display quality may be deteriorated. In contrast, in the liquid crystal device according to the present embodiment, the temperature of the device can be detected by the temperature-sensitive wiring 200, so that the device can be controlled in accordance with the temperature change. For example, when it is determined from the detected temperature that the responsiveness of the liquid crystal molecules in the liquid crystal layer 50 is poor, control is performed to supply a steeper pulse as a signal for displaying an image. In this way, it is possible to effectively suppress the deterioration in display quality due to the deterioration of the responsiveness of the liquid crystal.

  Here, suppose that a temperature sensor is separately provided instead of the temperature-sensitive wiring 200. In this case, since it is required to newly form an element constituting the temperature sensor on the TFT array substrate 10, there is a possibility that the apparatus configuration and the manufacturing process may be complicated as a result.

  On the other hand, the temperature-sensitive wiring 200 according to the present embodiment is disposed so as to at least partially overlap with the sealing material 52 when seen in a plan view. Since the region overlapping with the sealing material 52 is a region where the liquid crystal layer 50 does not exist (that is, a region that does not contribute to display), a metal wiring or the like having a light shielding property is almost always disposed. Therefore, even if the temperature-sensitive wiring 200 including a conductive material is disposed, the operation of the apparatus is not affected. Further, the metal wiring already provided in the apparatus can be used as the temperature-sensitive wiring 200 as it is. Therefore, it is possible to suppress the complexity of the device configuration and the manufacturing process and the increase in manufacturing cost.

  As described above, according to the liquid crystal device according to the present embodiment, since the temperature-sensitive wiring 200 is provided, the temperature of the device can be detected suitably with a simple configuration.

<Electronic equipment>
Next, a case where the above-described liquid crystal device is applied to various electronic devices will be described. FIG. 7 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 7, a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  Since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 7, a mobile personal computer, a mobile phone, an LCD TV, a viewfinder type, a monitor direct-view type video tape recorder, a car navigation device, a pager, an electronic device Examples include notebooks, calculators, word processors, workstations, videophones, POS terminals, and devices with touch panels. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention includes a reflective liquid crystal device (LCOS), a plasma display (PDP), a field emission display (FED, SED), an organic EL display, and a digital micromirror device. (DMD), electrophoresis apparatus and the like are also applicable.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and a liquid crystal device with such a change, In addition, an electronic device including the liquid crystal device is also included in the technical scope of the present invention.

  3a ... scanning line, 6a ... data line, 9a ... pixel electrode, 10 ... TFT array substrate, 10a ... image display area, 20 ... counter substrate, 30 ... TFT, 35 ... transistor part, 50 ... liquid crystal layer, 70 ... storage capacitor DESCRIPTION OF SYMBOLS 101 ... Data line drive circuit 102 ... External circuit connection terminal 104 ... Scan line drive circuit 200 ... Temperature sensitive wiring 410 ... First driver wiring part 420 ... Second driver wiring part 510 ... First COM wiring part , 510... Second COM wiring part.

Claims (6)

A pair of substrates bonded together through a sealing material;
A liquid crystal sandwiched between the pair of substrates;
A temperature-sensitive wiring, which is disposed along at least one side of one of the substrates, and disposed at a position overlapping the sealing material in plan view.   The temperature sensing wiring is formed in a film shape including a conductive material on one of the pair of substrates, and detects a temperature according to a change in resistance. LCD device. On the one substrate, a plurality of conductive layers including a scan line, a data line, a transistor provided corresponding to the intersection of the scan line and the data line, and a pixel electrode provided corresponding to the transistor, respectively. It is formed to be laminated,
The liquid crystal device according to claim 2, wherein the temperature sensitive wiring is formed in the same layer as any one of the plurality of conductive layers.   4. The liquid crystal device according to claim 3, wherein the temperature-sensitive wiring is formed in the same layer as the layer having the highest density when viewed in plan among the plurality of conductive layers.   The liquid crystal device according to claim 1, wherein the temperature-sensitive wiring includes a light-shielding material.   An electronic apparatus comprising the liquid crystal device according to claim 1.

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