JP2012153551A - Metal-supporting boron nitride nanostructure, and method for producing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a metal-supporting boron nitride nanostructure producible with high energy conversion efficiency, a metal-supporting boron nitride nanostructure supporting metal ultra-fine particles on a boron nitride nanostructure (nanotube, nanosheet, nanocone).SOLUTION: In the method for producing a metal-supporting boron nitride nanostructure, boron nitride 2 is provided on a thin metallic wire 1, and a pulse current is sent through the thin metallic wire 1 provided with the boron nitride 2, and thereby the thin metallic wire 1 is heated and changed to plasma, to thereby produce the boron nitride nanostructure.

Description

  The present invention relates to a metal-supported boron nitride nanostructure supporting metal ultrafine particles and a method for producing the same.

  Hexagonal boron nitride (hBN) has a high thermal conductivity of 600 W / mK in the a-axis direction, and is a highly anisotropic material that differs by 100 times or more depending on the crystal orientation, and has a negative electron affinity. It is a material suitable for a field emission electron gun. For this reason, hexagonal boron nitride (hBN) is made into nanotubes (boron nitride nanotubes), nanosheets (boron nitride nanosheets), and nanocones (boron nitride nanocones), and then mechanically or electromagnetically arranged to dissipate heat and light. Application to devices is expected.

  In order to regularly arrange the boron nitride nanotubes, boron nitride nanosheets, and boron nitride nanocones made of hexagonal boron nitride (hBN) by an electric field or a magnetic field, it is necessary to attach conductive or magnetic ultrafine particles thereto. is necessary.

  Further, the metal-supported boron nitride nanotubes, metal-supported boron nitride nanosheets, and metal-supported boron nitride nanocones in which the ultrafine particles having conductivity or magnetism are attached to hexagonal boron nitride (hBN) can also be used as catalysts. It is attracting attention as a versatile material.

  In order to realize these metal-supported boron nitride nanotubes, metal-supported boron nitride nanosheets, and metal-supported boron nitride nanocones, it is necessary to deposit metal fine particles such as Fe and Co on the boron nitride nanotubes, boron nitride nanosheets, and boron nitride nanocones. For that purpose, the metal fine particles and the boron nitride may be simultaneously held at a high temperature. Specifically, for example, a hexagonal boron nitride nanosheet using a laser ablation method in which a pulsed laser is applied to hexagonal boron nitride (hBN) in water has been proposed (Non-patent Document 1). However, the energy exchange efficiency of the pulse laser employed in this laser ablation method is as low as 1% to 2%, and thus has not been implemented so far.

  Further, there is a pulsed wire discharge method as a method for producing ultrafine particles having an energy exchange efficiency that is one to two digits higher than other physical evaporation methods including laser ablation. This pulse thin wire discharge method is a technique for evaporating a metal thin wire by applying a pulse current to a conductive thin wire to form ultrafine particles. For example, organic vapor or mist is dispersed in an atmospheric gas, and a pulse is applied to the metal thin wire therein. There have been proposed a method of attaching an organic substance to the surface of metal ultrafine particles by applying electricity (Patent Document 1), a method of manufacturing organic substance-coated metal ultrafine particles by applying an organic substance to a raw material fine wire (Patent Document 2), and the like.

Japanese Patent No. 3790898 JP 2007-254841 A

M. Shoji, T .; Nakayama, H. Suematsu, T. Suzuki and K. Niihara, “Synthesis of boron nitride nanosheets by an under methanol laser ablation method”, J. Am. Ceram. Process. Res. , 10 (2009) s23−s25 H. Suematsu, S. Nishimura, K .; Murai, Y. Hayashi, T. Suzuki, T. Nakayama, W. Jiang, A. Yamazaki1, K. Seki1 and K. Niihara, “Pulsed Wire Discharge Apparatus for Mass Production of Copper Nanopowders”, Rev. Sci. Inst. 78 (2007) 056105.

  However, since hexagonal boron nitride (hBN) having a high electrical resistance does not evaporate due to current heating, it cannot be used alone as a raw material for the above-described pulsed wire discharge. Further, this hexagonal boron nitride (hBN) Has a high boiling point, and it was difficult to disperse it as vapor or mist in an atmospheric gas (for example, nitrogen gas or argon gas), so it was not possible to manufacture boron nitride nanostructures using the pulsed wire discharge method Moreover, metal loading was impossible.

  The present invention solves the above-mentioned problems, and a metal-supported boron nitride nanostructure in which ultrafine metal particles are supported on boron nitride nanostructures (boron nitride nanotubes, boron nitride nanosheets, boron nitride nanocones, etc.) that were impossible with the prior art An object of the present invention is to provide a method for producing a metal-supported boron nitride nanostructure capable of producing a body with high energy conversion efficiency.

  The gist of the present invention will be described with reference to the accompanying drawings.

  Boron nitride 2 is provided on the metal thin wire 1, a pulse current is applied to the metal thin wire 1 provided with the boron nitride 2, and the metal thin wire 1 is heated and turned into plasma to produce a metal-supported boron nitride nanostructure. The present invention relates to a method for producing a metal-supported boron nitride nanostructure.

  2. The method of manufacturing a metal-supported boron nitride nanostructure according to claim 1, wherein the metal thin wire 1 has a resistance greater than an internal resistance of the discharge circuit when the pulse current is applied and a maximum voltage of the discharge circuit. It is related with the manufacturing method of the metal carrying | support boron nitride nanostructure characterized by being the material and diameter which can be evaporated in this.

  Moreover, in the manufacturing method of the metal carrying | support boron nitride nanostructure of any one of Claim 1, 2, the said metal fine wire 1 is from the alloy containing at least 2 types of these in the simple substance of Fe, Co, or Ni. The present invention relates to a method for producing a metal-supported boron nitride nanostructure.

  Moreover, in the manufacturing method of the metal carrying | support boron nitride nanostructure of any one of Claims 1-3, the said metal fine wire 1 is set to 0.05 mm-0.5 mm in diameter, It is characterized by the above-mentioned. The present invention relates to a method for producing a metal-supported boron nitride nanostructure.

  5. The method for producing a metal-supported boron nitride nanostructure according to claim 1, wherein a heating time of the metal wiring 1 is 0.1 ms or less. The present invention relates to a method for manufacturing a structure.

  Moreover, in the manufacturing method of the metal carrying | support boron nitride nanostructure of any one of Claims 1-5, the said boron nitride 2 is apply | coated to the said metal fine wire 1 by the thickness of 0.01 mm-0.1 mm. The present invention relates to a method for producing a metal-supported boron nitride nanostructure.

  The metal-supported boron nitride nanostructure according to claim 1, wherein the boron nitride 2 is hexagonal boron nitride 2. This relates to a method for manufacturing a body.

  The method for producing a metal-supported boron nitride nanostructure according to any one of claims 1 to 7, wherein the metal-supported boron nitride nanostructure is a nanotube or nanosheet made of boron nitride 2 and having a thickness of 5 nm to 500 nm. Alternatively, the present invention relates to a method for producing a metal-supported boron nitride nanostructure, which is at least one of nanocones.

  Further, the metal-supported boron nitride nanostructure having metal particles supported thereon having a thickness of 5 nm to 500 nm, wherein the metal particles are Fe, Co or Ni single particles having a particle size of 10 nm to 500 nm or at least The metal-supported boron nitride nanostructure is an alloy particle containing at least two of Fe, Co, and Ni.

  The metal-supported boron nitride nanostructure according to claim 9, wherein the metal-supported boron nitride nanostructure is at least one of a nanotube, a nanosheet, or a nanocone made of boron nitride 2. This relates to a boron nanostructure.

  The present invention uses a pulsed wire discharge method with high energy conversion efficiency, and boron nitride as an insulator is provided on a metal wire, and a pulse current is passed through the metal wire to heat it, so that boron nitride is also heated at the same time, Therefore, metal-supported boron nitride nanostructures supporting metal ultrafine particles, such as metal-supported boron nitride nanotubes, metal-supported boron nitride nanosheets, and metal-supported boron nitride nanocones can be efficiently produced.

It is a schematic diagram of the pulse wire discharge device used for a present Example. It is a scanning electron micrograph which shows the metal carrying | support boron nitride nanosheet which carry | supported the Fe-Ni alloy fine particle manufactured with the manufacturing method shown to a present Example. It is a powder X-ray diffraction pattern of the metal carrying | support boron nitride nanosheet which carry | supported the Fe-Ni alloy fine particle manufactured with the manufacturing method shown to a present Example. It is a scanning electron micrograph which shows the metal carrying | support boron nitride nanosheet and boron nitride nanotube which carry | supported Fe fine particle manufactured with the manufacturing method shown to a present Example.

  In the present invention, boron nitride 2, for example hexagonal boron nitride 2 (hBN), is provided on the surface of a metal thin wire 1, such as Fe, Co or Ni alone or an alloy containing at least two of these. When, for example, an atmosphere gas can be introduced into the chamber 3 and a pulsed large current is passed through the fine metal wire 1, the fine metal wire 1 is instantaneously rapidly heated by electric resistance. The boron nitride 2 adhering to the surface is also heated at the same time by heat conduction, and the fine metal wire 1 and the boron nitride 2 are evaporated and turned into plasma.

  Specifically, the electrical energy stored in the discharge circuit is made by making the metal wire 1 a material and a diameter that are larger than the internal resistance of the discharge circuit and can be vaporized and plasmaized at the maximum voltage of the discharge circuit. Is converted into internal energy necessary for efficiently converting the fine metal wire 1 and the boron nitride 2 into evaporative plasma.

  The metal thin wire 1 and boron nitride 2 in a plasma state are cooled and solidified by the atmospheric gas introduced into the chamber 3, so that the metal thin wire 1 becomes ultrafine metal particles, and the boron nitride 2 is, for example, a boron nitride nanotube. Boron nitride nanostructures such as boron nitride nanosheets and boron nitride nanocones.

  When metal ultrafine particles and boron nitride nanostructures are formed from this plasma state, the boron nitride nanostructures adhere to each other in an atmospheric gas and are composed of single metal particles or alloy particles that become the material of the metal thin wire 1. The resulting composite material, that is, a metal-supported boron nitride nanostructure supporting metal ultrafine particles.

  In other words, the boron nitride 2 that is an insulator cannot be heated by current using the pulse thin wire discharge method alone, but by providing the metal thin wire 1 in this way, the boron nitride 2 is also simultaneously formed by heat conduction from the metal thin wire 1. It becomes possible to heat them, rapidly heating them by pulse energization at the same time, and evaporating them into plasma, so that the metal ultrafine particles and the boron nitride nanostructure can exist at a high temperature at the same time. Can be attached to and supported on the boron nitride nanostructure, and the metal-supported boron nitride nanostructure supporting the metal ultrafine particles can be efficiently produced.

  Conventionally, boron nitride 2 could not be energized and heated using a pulsed wire discharge method, but boron nitride 2 was provided on metal wire 1, and by heating this metal wire 1, boron nitride 2 was simultaneously heated and evaporated. It became possible to make it into plasma.

  In order to attach the metal ultrafine particles to the boron nitride nanostructure, it is desirable that the respective evaporation sources are as close as possible. For example, when boron nitride 2 is applied to the metal thin wire 1, the distance between the respective evaporation sources is the largest. The ultrafine metal particles can be easily attached to the boron nitride nanostructure.

  Embodiments of the present invention will be described with reference to the drawings.

  The present embodiment is a method for manufacturing a metal-supported boron nitride nanostructure that manufactures a metal-supported boron nitride nanostructure using a pulsed wire discharge method. Boron nitride 2 is applied to the metal wire 1 and this boron nitride 2 is applied. By applying a large pulse current to the thin metal wire 1 coated with, and heating the fine metal wire 1, the boron nitride 2 is simultaneously heated to evaporate both the fine metal wire 1 and the boron nitride 2 to form plasma. The ultrafine metal wire 1 and boron nitride 2 are cooled in a gas atmosphere and solidified to form ultrafine metal particles and boron nitride nanostructures, and the ultrafine metal particles are attached to and supported on the boron nitride nanostructures. This is a method for producing a metal-supported boron nitride nanostructure capable of efficiently producing a metal-supported boron nitride nanostructure carrying metal ultrafine particles.

  Further, in this embodiment, a pulse thin wire discharge device as shown in FIG. 1 is used. This pulse thin wire discharge device includes a discharge circuit section including a high voltage charging power source 4, a capacitor 5 and a switch 6 as main components, a metal The thin wire 1 is made up of a chamber 3 in which ultrafine particles are formed by energizing a pulse current to generate plasma.

  The chamber 3 is provided with a gas inlet 7 for introducing atmospheric gas and a vacuum exhaust port 8. A recovery filter 9 is provided at the vacuum exhaust port 8 to form a metal superstructure formed in the chamber 3. The metal-supported boron nitride nanostructure supporting fine particles is collected.

  In order to produce a metal-supported boron nitride nanostructure carrying ultrafine metal particles using this pulsed wire discharge device, a simple substance of Fe, Co or Ni having a diameter of 0.05 mm to 0.5 mm or at least two of them A hexagonal boron nitride 2 (hBN) having a thickness of 0.01 mm to 0.1 mm is applied and adhered to the surface of the fine metal wire 1 made of an alloy containing a material between the electrodes 10 of the discharge circuit unit installed in the chamber 3. Set to.

  After evacuating the chamber 3 in which the fine metal wire 1 coated with the hexagonal boron nitride 2 (hBN) is disposed, an inert gas such as nitrogen, argon, or helium is introduced from the gas inlet 7 to enter the chamber 3. The pressure is 10 kPa to 200 kPa.

  Next, the capacitor 5 is charged with a voltage of 1 kV to 10 kV by the high-voltage charging power source 4, and the switch 6 is closed to apply a large pulse current to the metal thin wire 1 coated with hexagonal boron nitride 2 (hBN) to rapidly heat it. And evaporate to plasma.

  The metal thin wire 1 and the hexagonal boron nitride 2 (hBN) in the plasma state are cooled and solidified in an inert gas, respectively, while forming hexagonal boron nitride nanostructures and Fe, Co or Ni ultrafine particles. Any one of hexagonal boron nitride nanotubes (hBN nanotubes), hexagonal boron nitride nanosheets (hBN nanosheets), hexagonal boron nitride nanocones (hBN nanocones) having a thickness of 5 nm to 500 nm, Fe having a particle size of 10 nm to 30 nm, A composite material composed of single particles of Co or Ni or alloy particles including at least two of them, that is, a metal-supported hexagonal boron nitride nanostructure supporting metal ultrafine particles is manufactured, and the metal ultrafine particles are supported. The metal-supported hexagonal boron nitride nanostructure was vacuumed with the inert gas in the chamber 3 When you exhaust from the gas port 8, it is recovered by trapping in the recovery filter 9 provided in the middle of the vacuum exhaust port 8.

  In the present embodiment, the material used for the fine metal wire 1 is made of Fe, Co, Ni alone or an alloy containing at least two of them, and the diameter is set to 0.05 mm to 0.5 mm. This is because the electric energy accumulated in the discharge circuit by pulse energization can be converted into internal energy necessary for the metal fine wire 1 and hexagonal boron nitride 2 (hBN) to evaporate, and the diameter is larger than 0.5 mm. When the resistance value of the thin metal wire 1 is smaller than the internal resistance of the discharge circuit, a short circuit occurs, and when the diameter is smaller than 0.05 mm, a current that can be evaporated at the maximum voltage of the discharge circuit can be applied. Disappear.

  In the present example, the particles attached to the hexagonal boron nitride nanostructure have a particle size of 10 nm to 500 nm. This is to prevent adhesion to the hexagonal boron nitride nanostructure and alteration such as oxidation.

  That is, if the particle size of the ultrafine metal particles is larger than 500 nm, the adhesion force to the boron nitride nanostructure is reduced, and even if it adheres to the boron nitride nanostructure, it may not be supported and peeled off. If the particle size is smaller than 10 nm, the possibility of alteration due to oxidation or the like increases.

  In this embodiment, the thickness of the hexagonal boron nitride 2 (hBN) applied to the thin metal wire 1 is set to 0.01 mm to 0.1 mm. This is because the heat necessary for the evaporation of hexagonal boron nitride 2 (hBN) is converted from the energy charged in the capacitor 5 by heat conduction to enable the evaporation of hexagonal boron nitride 2 (hBN).

  If the thickness is less than 0.01 mm, it will not be able to evaporate due to scattering from the fine metal wire 1 at the time of discharge. The internal energy required for the process cannot be obtained.

  In this embodiment, the thickness of the boron nitride nanostructure such as boron nitride nanotube is set to 5 nm to 500 nm. This is because boron nitride nanostructures such as boron nitride nanotubes are deformed if they are not thicker than a certain level, and if they are too thick, they will exhibit the same physical properties as bulk bodies, This is because the advantage is lost.

  In the present embodiment, the heating time of the fine metal wire 1 is set to 0.1 ms or less. This is because the loss due to heat conduction increases as the heating time increases, and the conversion efficiency converts the electrical energy accumulated in the discharge circuit into internal energy necessary for evaporating the metal fine wire 1 and hexagonal boron nitride 2 (hBN). This is because the metal wire 1 and the hexagonal boron nitride 2 (hBN) may not evaporate and become plasma.

  The volume of the chamber 3 of the pulsed wire discharge device used in this embodiment is preferably about 1 to 30 liters, and the capacitor 5 may be a single or a plurality connected. Further, the switch 6 can be appropriately employed as long as it exhibits an effect equivalent to that of the present embodiment, such as a ball gap switch, a triggertron, and a semiconductor switch.

  Since the present embodiment is as described above, the hexagonal boron nitride 2 (hBN) is provided on the surface of the fine metal wire 1 made of Fe, Co or Ni alone or an alloy containing at least two of them, and this is used as an atmosphere. When a gas pulse is set in the chamber 3 into which gas can be introduced and a pulsed high current is passed through the set thin metal wire 1, the fine metal wire 1 is instantaneously rapidly heated by electric resistance, and the heat from the heated thin metal wire 1. By conduction, the hexagonal boron nitride 2 (hBN) adhering to the surface is also heated at the same time, and the metal fine wire 1 and the hexagonal boron nitride 2 (hBN) are converted into evaporative plasma. Hexagonal boron nitride 2 (hBN) is cooled and solidified by the atmospheric gas (inert gas) introduced into the chamber 3, and the fine metal wire 1 becomes ultrafine metal particles. Hexagonal boron nitride 2 (hBN) becomes hexagonal boron nitride nanotube, hexagonal boron nitride nanosheet, and hexagonal boron nitride nanostructures such as hexagonal boron nitride nanocones.

  In other words, the hexagonal boron nitride 2 (hBN), which is an insulator, could not be energized and heated using the pulse thin wire discharge method. However, by providing the metal thin wire 1 in this way, heat conduction from the metal thin wire 1 is caused. Hexagonal boron nitride 2 (hBN) can also be heated at the same time, and at the same time, ultrafine metal particles and hexagonal boron nitride nanostructures are present at high temperatures by rapid heating by pulse conduction and evaporative plasma. Accordingly, the ultrafine metal particles are attached to and supported on the hexagonal boron nitride nanostructure, and the metal-supported hexagonal boron nitride nanostructure carrying the ultrafine metal particles can be efficiently produced.

  Further, in order to attach the ultrafine metal particles to the hexagonal boron nitride nanostructure, it is desirable that the respective evaporation sources are as close as possible. In this embodiment, hexagonal boron nitride 2 (hBN) is applied to the metal thin wire 1. Therefore, the interval between the respective evaporation sources can be narrowed, and the ultrafine metal particles can be easily attached to the hexagonal boron nitride nanostructure.

<Example 1>
In the following, detailed conditions for producing a metal-supported hexagonal boron nitride nanostructure carrying Fe-Ni alloy ultrafine particles using Fe and Ni as the fine metal wires 1 are shown, and the collected fine particles are observed and analyzed. Results are shown.

  Hexagonal boron nitride 2 (hBN) having a diameter of 10 μm is applied to a metal thin wire 1 made of Fe having a length of 20 mm and a diameter of 0.2 mm and Ni having a length of 20 mm and a diameter of 0.2 mm to a thickness of 0.1 mm. , Set between the electrodes 10 of the discharge circuit arranged in the chamber 3, evacuated the chamber 3, introduced nitrogen gas from the gas inlet 7, brought the pressure in the chamber 3 to 100 kPa, and discharged at a charging voltage of 5 kV After that, the nitrogen gas in the chamber 3 was exhausted through the vacuum exhaust port 8, and particles adhering to the recovery filter 9 disposed in the middle of the vacuum exhaust port 8 during the exhaust were recovered. As the discharge time, that is, the heating time becomes longer, the loss due to heat conduction increases, and the electric energy accumulated in the discharge circuit is converted into internal energy necessary for evaporating the fine metal wire 1 and hexagonal boron nitride 2 (hBN). Since the conversion efficiency for conversion decreases and the metal fine wire 1 and hexagonal boron nitride 2 (hBN) may not evaporate and become plasma, the discharge time in this example was set to 0.1 ms or less.

  The results of observing the collected particles with a scanning electron microscope (SEM) are shown in FIG. In this SEM observation photograph, it was confirmed that spherical metal ultrafine particles having a diameter of 20 nm to 300 nm were attached to the surface of a hexagonal boron nitride nanosheet having a thickness of 100 nm to 300 nm.

  Further, when the collected particles were measured by powder X-ray diffraction, the X-ray diffraction pattern shown in the upper part of FIG. 3 was obtained. In this figure, since the atomic scattering factors of B (boron) and N (nitrogen) are small, diffraction of hexagonal boron nitride 2 (hBN) could not be observed.

  However, when compared with the diffraction peak positions of the Fe and Ni simple metals shown in the X-ray diffraction patterns shown in the middle and lower parts of FIG. 3, the peak values of the recovered particles in the figure shown in the upper part of FIG. It was confirmed that the spherical particles adhering to the surface of the hexagonal boron nitride nanosheet were Fe-Ni alloys, because they were at approximately the intermediate position between the peak value of Fe and the peak value of Ni shown in the lower stage. .

  Therefore, the recovered particles can be confirmed to be a composite material in which Fe—Ni alloy ultrafine particles are adhered on a hexagonal boron nitride nanosheet, that is, a metal-supported hexagonal boron nitride nanosheet carrying Fe—Ni alloy ultrafine particles. It was.

  Although a hexagonal boron nitride sintered body having a diameter of 3 mm and a length of 20 mm was used in place of the fine metal wire 1 using Fe and Ni, discharge was attempted under the same conditions. The pulse current did not flow.

<Example 2>
In the following, detailed conditions for producing a metal-supported hexagonal boron nitride nanostructure carrying Fe single metal ultrafine particles using Fe as the fine metal wire 1 are shown, and SEM observation results of the collected fine particles are shown.

  A thin metal wire 1 made of Fe having a length of 20 mm and a diameter of 0.2 mm is coated with a hexagonal boron nitride 2 (hBN) having a diameter of 10 μm to a thickness of 0.05 mm. After evacuating the chamber 3, nitrogen gas is introduced from the gas introduction port 7, the pressure in the chamber 3 is set to 100 kPa, discharge is performed at a charging voltage of 5 kV, and then the nitrogen gas in the chamber 3 is evacuated. The exhaust gas was exhausted through the port 8, and particles adhering to the recovery filter 9 disposed in the middle of the vacuum exhaust port 8 during the exhaustion were recovered. Further, the collected particles were heat-treated at 1200 ° C. in a nitrogen atmosphere set at a pressure of 100 kPa.

  FIG. 4 shows the results of observation of the recovered and heat-treated particles with a scanning electron microscope (SEM). In this SEM observation photograph, it was confirmed that spherical Fe ultrafine particles having a diameter of 20 nm to 300 nm were adhered to the surface of a hexagonal boron nitride nanosheet having a size of 10 μm.

  Furthermore, it was confirmed that hexagonal boron nitride nanotubes or hexagonal boron nitride nanocones having a diameter of 10 nm to 20 nm and a length of 1 μm to 3 μm were adhered.

  Therefore, the recovered particles are hexagonal boron nitride nanotubes or a composite material in which hexagonal boron nitride nanocones and Fe ultrafine particles are adhered on a hexagonal boron nitride nanosheet, that is, Fe single metal ultrafine particles and hexagonal boron nitride nanotubes. Or a metal-supported hexagonal boron nitride nanosheet supporting hexagonal boron nitride nanocones.

  In this example, the heat treatment as described above was performed to optimize the adhesion, phase, and morphology of the collected particles. However, the present invention is not limited to this example, and in various atmospheric gases such as oxidation and reduction. Heat treatment may be performed.

<Example 3>
The detailed conditions for producing a metal-supported hexagonal boron nitride nanostructure supporting Co ultrafine metal particles using Co as the fine metal wire 1 will be described below.

  A thin metal wire 1 made of Co having a length of 20 mm and a diameter of 0.2 mm is coated with a hexagonal boron nitride 2 (hBN) having a diameter of 10 μm to a thickness of 0.03 mm, and between the electrodes 10 of the discharge circuit disposed in the chamber 3. After evacuating the chamber 3, nitrogen gas is introduced from the gas introduction port 7, the pressure in the chamber 3 is set to 10 kPa, discharge is performed at a charging voltage of 5 kV, and then the nitrogen gas in the chamber 3 is evacuated. The exhaust gas was exhausted through the port 8, and particles adhering to the recovery filter 9 disposed in the middle of the vacuum exhaust port 8 during the exhaustion were recovered.

  It was confirmed that the collected particles were a composite material in which Co ultrafine particles were adhered on a hexagonal boron nitride nanosheet, that is, a metal-supported hexagonal boron nitride nanosheet in which Co simple metal ultrafine particles were supported.

  Note that the present invention is not limited to this embodiment, and the specific configuration of each component can be designed as appropriate.

1 Metal wire 2 Boron nitride

Claims (10)

  A metal characterized in that boron nitride is provided on a metal thin wire, a pulse current is applied to the metal thin wire provided with the boron nitride, and the metal fine wire is heated and turned into plasma to produce a metal-supported boron nitride nanostructure. A method for producing a supported boron nitride nanostructure.   2. The method of manufacturing a metal-supported boron nitride nanostructure according to claim 1, wherein the metal thin wire has a resistance greater than an internal resistance of the discharge circuit when the pulse current is applied and can be evaporated at a maximum voltage of the discharge circuit. A method for producing a metal-supported boron nitride nanostructure, wherein the material and diameter are various.   The method for producing a metal-supported boron nitride nanostructure according to any one of claims 1 and 2, wherein the thin metal wire is made of a simple substance of Fe, Co or Ni or an alloy containing at least two of them. A method for producing a metal-supported boron nitride nanostructure.   4. The method for producing a metal-supported boron nitride nanostructure according to any one of claims 1 to 3, wherein the thin metal wire is set to have a diameter of 0.05 mm to 0.5 mm. Method for producing boron nanostructure.   5. The method for producing a metal-supported boron nitride nanostructure according to claim 1, wherein a heating time of the metal wiring is 0.1 ms or less. Production method.   The method for producing a metal-supported boron nitride nanostructure according to any one of claims 1 to 5, wherein the boron nitride is applied to the metal thin wire with a thickness of 0.01 mm to 0.1 mm. A method for producing a metal-supported boron nitride nanostructure.   The method for manufacturing a metal-supported boron nitride nanostructure according to any one of claims 1 to 6, wherein the boron nitride is hexagonal boron nitride. .   The method for producing a metal-supported boron nitride nanostructure according to any one of claims 1 to 7, wherein the metal-supported boron nitride nanostructure is a nanotube, nanosheet, or nanocone made of boron nitride and having a thickness of 5 nm to 500 nm. A method for producing a metal-supported boron nitride nanostructure, comprising at least one.   A metal-supported boron nitride nanostructure having metal particles supported thereon, having a thickness of 5 nm to 500 nm, and the metal particles are Fe, Co or Ni single particles having a particle diameter of 10 nm to 500 nm or at least the Fe A metal-supported boron nitride nanostructure comprising alloy particles containing at least two of Co, Ni and Co.   10. The metal-supported boron nitride nanostructure according to claim 9, wherein the metal-supported boron nitride nanostructure is at least one of a nanotube, a nanosheet, or a nanocone made of boron nitride. body.