JP2012152849A - Polishing device - Google Patents

Polishing device Download PDF

Info

Publication number
JP2012152849A
JP2012152849A JP2011013545A JP2011013545A JP2012152849A JP 2012152849 A JP2012152849 A JP 2012152849A JP 2011013545 A JP2011013545 A JP 2011013545A JP 2011013545 A JP2011013545 A JP 2011013545A JP 2012152849 A JP2012152849 A JP 2012152849A
Authority
JP
Japan
Prior art keywords
surface plate
workpiece
carrier
eddy current
displacement sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011013545A
Other languages
Japanese (ja)
Inventor
Yuki Nagai
佑樹 永井
Atsushi Takahashi
篤 高橋
Akihiro Maezawa
明弘 前澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2011013545A priority Critical patent/JP2012152849A/en
Publication of JP2012152849A publication Critical patent/JP2012152849A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To accurately measure the thickness of a nonmagnetic workpiece while preventing the nonmagnetic workpiece from being damaged by the chips produced from a carrier.SOLUTION: This polishing device includes: a lower surface plate formed of a magnetic body on the upper surface of which a polishing cloth is stuck; the nonmagnetic carrier which holds the nonmagnetic workpiece and is placed, together with the workpiece, on the polishing cloth put on the lower surface plate; an upper surface plate on the lower surface of which a polishing cloth for polishing the upper surface of the workpiece held by the carrier is stuck and which is liftably disposed above the lower surface plate; an eddy current displacement sensor which is incorporated in the upper surface plate and measures the distance between itself and the lower surface plate; and a calculation section for calculating the thickness of the workpiece based on the results of the measurement by the eddy current displacement sensor. The carrier is formed of a material smaller in hardness than the workpiece.

Description

本発明は、研磨装置に関する。   The present invention relates to a polishing apparatus.

従来、例えばアルミ板等のワークを研磨する際には、キャリアによってワークを保持した状態で研磨が実行されている。キャリアとワークとは下定盤に載置されていて、ワークの上部がキャリアの上面から突出した状態で研磨が行われる。この研磨装置には、上定盤に内蔵され、ワークの上方に配置された渦電流式変位センサが設けられていて、この渦電流式変位センサが上定盤からワークの上面までの距離を測定することで、研磨時におけるワークの厚みを検出している。
ここで、ガラス板等の非磁性体のワークを研磨する場合もあるが、この場合、測定対象が非磁性体であると渦電流式変位センサでは測定ができない。このため、金属製のキャリアを用いて、上定盤からキャリアの上面までの距離を渦電流式変位センサで測定することで、間接的にワークの厚さを検出する研磨装置が知られている（例えば特許文献１参照）。 Conventionally, when a workpiece such as an aluminum plate is polished, the polishing is performed with the workpiece held by a carrier. The carrier and the workpiece are placed on the lower surface plate, and polishing is performed with the upper portion of the workpiece protruding from the upper surface of the carrier. This polishing device is equipped with an eddy current displacement sensor built in the upper surface plate and placed above the workpiece. This eddy current displacement sensor measures the distance from the upper surface plate to the upper surface of the workpiece. By doing so, the thickness of the workpiece at the time of polishing is detected.
Here, a non-magnetic workpiece such as a glass plate may be polished. In this case, if the measurement target is a non-magnetic material, the eddy current displacement sensor cannot measure. For this reason, a polishing apparatus that indirectly detects the thickness of a workpiece by measuring the distance from the upper surface plate to the upper surface of the carrier with an eddy current displacement sensor using a metal carrier is known. (For example, refer to Patent Document 1).

特開２００６−２３１４７１号公報JP 2006-231471 A

ところで、非磁性体のワークを研磨する場合、金属製のキャリアから発生した切り粉がワークを傷つけてしまうおそれがあった。
本発明の課題は、キャリアから発生した切り粉によって非磁性体のワークが傷つけられてしまうことを防止しつつ、非磁性体のワークの厚さを正確に測定可能とすることである。 By the way, when a non-magnetic workpiece is polished, there is a possibility that chips generated from a metal carrier may damage the workpiece.
An object of the present invention is to make it possible to accurately measure the thickness of a non-magnetic workpiece while preventing the non-magnetic workpiece from being damaged by the chips generated from the carrier.

請求項１に記載の発明に係る研磨装置は、
上面に研磨布が貼り付けられた磁性体からなる下定盤と、
非磁性体のワークを保持し、当該ワークとともに前記下定盤の研磨布上に載置される非磁性体のキャリアと、
前記キャリアにより保持された前記ワークの上面を研磨する研磨布が下面に貼り付けられ、前記下定盤の上方に昇降自在に配置された上定盤と、
前記上定盤に内蔵されて、前記下定盤までの距離を測定する渦電流式変位センサと、
前記渦電流式変位センサの測定結果を基に前記ワークの厚みを算出する算出部とを備え、
前記キャリアは、前記ワークの硬度よりも小さい素材によって形成されていることを特徴としている。 The polishing apparatus according to the invention of claim 1 is
A lower surface plate made of a magnetic material with a polishing cloth affixed to the upper surface;
A non-magnetic carrier that holds the non-magnetic workpiece and is placed on the polishing cloth of the lower surface plate together with the workpiece;
An upper surface plate that is attached to the lower surface with a polishing cloth that polishes the upper surface of the work held by the carrier, and is arranged to be movable up and down above the lower surface plate,
An eddy current displacement sensor built in the upper surface plate for measuring the distance to the lower surface plate;
A calculation unit that calculates the thickness of the workpiece based on the measurement result of the eddy current displacement sensor,
The carrier is formed of a material smaller than the hardness of the workpiece.

請求項２記載の発明は、請求項１記載の研磨装置において、
前記渦電流式変位センサの周囲には隙間が形成されていることを特徴としている。 The invention according to claim 2 is the polishing apparatus according to claim 1,
A gap is formed around the eddy current displacement sensor.

本発明によれば、キャリアから発生した切り粉によって非磁性体のワークが傷つけられてしまうことを防止しつつ、非磁性体のワークの厚さを正確に測定することができる。   According to the present invention, it is possible to accurately measure the thickness of a non-magnetic workpiece while preventing the non-magnetic workpiece from being damaged by the chips generated from the carrier.

本実施形態に係る研磨装置の要部構成を模式的に示す平面図である。It is a top view which shows typically the principal part structure of the polishing apparatus which concerns on this embodiment. 本実施形態に係る研磨装置の要部構成を模式的に示す断面図である。It is sectional drawing which shows typically the principal part structure of the polishing apparatus which concerns on this embodiment. 本実施形態に係る渦電流式変位センサの概略構成を示す拡大図である。It is an enlarged view which shows schematic structure of the eddy current type displacement sensor which concerns on this embodiment. 本実施形態に係る渦電流式変位センサの測定状態を示す説明図であり、（ａ）は研磨前の状態を示し、（ｂ）は研磨中の状態を示している。It is explanatory drawing which shows the measurement state of the eddy current type displacement sensor which concerns on this embodiment, (a) shows the state before grinding | polishing, (b) has shown the state under grinding | polishing.

以下に、本発明を実施するための最良の形態について図面を用いて説明する。ただし、以下に述べる実施形態には、本発明を実施するために技術的に好ましい種々の限定が付されているが、発明の範囲を以下の実施形態及び図示例に限定するものではない。   The best mode for carrying out the present invention will be described below with reference to the drawings. However, although various technically preferable limitations for implementing the present invention are given to the embodiments described below, the scope of the invention is not limited to the following embodiments and illustrated examples.

図１は、本実施形態に係る研磨装置の要部構成を示す平面図であり、図２は断面図である。これら図１及び図２に示すように、研磨装置１には、上定盤２と、下定盤３と、サンギア４と、インターナルギア５とが設けられており、これらが図示しない機台の上に同一軸線の周りに回転自在に支持されている。上定盤２、下定盤３、サンギア４及びインターナルギア５のそれぞれの駆動ギアには図示しない駆動モータが係合しており、駆動モータの駆動によって上定盤２、下定盤３、サンギア４及びインターナルギア５が回転するようになっている。   FIG. 1 is a plan view showing a main configuration of a polishing apparatus according to the present embodiment, and FIG. 2 is a cross-sectional view. As shown in FIGS. 1 and 2, the polishing apparatus 1 is provided with an upper surface plate 2, a lower surface plate 3, a sun gear 4, and an internal gear 5, which are arranged on a machine base (not shown). Are supported rotatably around the same axis. A drive motor (not shown) is engaged with the drive gears of the upper surface plate 2, the lower surface plate 3, the sun gear 4 and the internal gear 5, and the upper surface plate 2, the lower surface plate 3, the sun gear 4 and the like are driven by the drive motor. The internal gear 5 is configured to rotate.

上定盤２は、金属等の磁性体から形成されていて、その下面が平坦な面に形成されている。下定盤３は、金属等の磁性体から形成されていて、その上面が平坦な面に形成されている。上定盤２は、その下面が、下定盤３の上面に対向するように下定盤３の上方に配置されている。上定盤２は、下定盤３との間隔を調整できるように図示しない昇降装置によって昇降自在となっている。
また、上定盤２の下面及び下定盤３の上面には、不織布、硬質発泡ウレタン等で形成された研磨布２１，３１が貼り付けられている。 The upper surface plate 2 is made of a magnetic material such as metal, and its lower surface is formed on a flat surface. The lower surface plate 3 is made of a magnetic material such as metal, and its upper surface is formed as a flat surface. The upper surface plate 2 is disposed above the lower surface plate 3 so that the lower surface thereof faces the upper surface of the lower surface plate 3. The upper surface plate 2 can be raised and lowered by an elevating device (not shown) so that the distance from the lower surface plate 3 can be adjusted.
Further, polishing cloths 21 and 31 made of a nonwoven fabric, hard foam urethane, or the like are attached to the lower surface of the upper surface plate 2 and the upper surface of the lower surface plate 3.

上定盤２と下定盤３との間には、図示しない研磨剤供給装置によって研磨剤が供給されるようになっている。また、上定盤２と下定盤３との間には、ワーク６を保持するための円板上のキャリア７が配置されている。キャリア７の中心部には、サンギア４の外歯４１に噛合する内歯７１が形成されている。また、キャリア７の外周縁には、インターナルギア５の内歯５１に噛合する外歯７２が形成されている。キャリア７には、複数のワーク６を個別に保持するためのワーク保持孔７３も複数形成されている。これらのワーク保持孔７３内に円板状のワーク６が嵌装されるようになっている。   An abrasive is supplied between the upper surface plate 2 and the lower surface plate 3 by an abrasive material supply device (not shown). A carrier 7 on a disc for holding the workpiece 6 is disposed between the upper surface plate 2 and the lower surface plate 3. Inner teeth 71 that mesh with the outer teeth 41 of the sun gear 4 are formed at the center of the carrier 7. Further, external teeth 72 that mesh with the internal teeth 51 of the internal gear 5 are formed on the outer peripheral edge of the carrier 7. A plurality of work holding holes 73 for individually holding a plurality of works 6 are formed in the carrier 7. A disc-shaped workpiece 6 is fitted into these workpiece holding holes 73.

また、キャリア７は、ワーク６よりも硬度の小さい非磁性体から形成されている。キャリア７の素材は単一の素材で形成されていても、複数の素材から形成されていても良い。キャリア７が複数の素材から形成されている場合は、全ての素材がワーク6の硬度よりも低いことが好ましい。キャリア７の素材には特に限定はなく、ポリ塩化ビニル、フェノール樹脂、アラミド樹脂、ポリイミド樹脂、ポリカーボネイト、布ベークライト、カーボンキャリア、テフロン（登録商標）などが挙げられる。複数の素材から形成されたキャリアとしては、繊維質のシート体に樹脂を含浸させたものが好ましく、繊維質のシートとしては炭素繊維やガラス繊維やアラミド繊維が挙げられ、含浸する樹脂としてはエポキシ樹脂、フェノール樹脂、ポリイミド樹脂又はビスマレイミド樹脂などが挙げられる。例えばワーク６が非磁性体であるガラスやシリコンから形成されている場合においては、キャリア７は上に挙げた素材の中で、ガラスやシリコンより硬度の小さい素材によって形成されている。これらの中でも、ポリ塩化ビニル、ポリカーボネイト、布ベークライト及びガラスエポキシ樹脂が特に好ましく用いられる。   The carrier 7 is formed of a nonmagnetic material having a hardness lower than that of the workpiece 6. The material of the carrier 7 may be formed of a single material or may be formed of a plurality of materials. When the carrier 7 is formed of a plurality of materials, it is preferable that all materials are lower than the hardness of the workpiece 6. The material of the carrier 7 is not particularly limited, and examples thereof include polyvinyl chloride, phenol resin, aramid resin, polyimide resin, polycarbonate, cloth bakelite, carbon carrier, and Teflon (registered trademark). The carrier formed from a plurality of materials is preferably a fiber sheet body impregnated with a resin, and the fiber sheet includes carbon fiber, glass fiber, and aramid fiber, and the resin to be impregnated is epoxy. Examples thereof include resins, phenol resins, polyimide resins, and bismaleimide resins. For example, when the workpiece 6 is made of glass or silicon which is a non-magnetic material, the carrier 7 is made of a material whose hardness is lower than that of glass or silicon among the materials mentioned above. Among these, polyvinyl chloride, polycarbonate, cloth bakelite, and glass epoxy resin are particularly preferably used.

上定盤２には、ワーク６の厚みを検出するため、下定盤３までの距離を測定する渦電流式変位センサ８が内蔵されている。渦電流式変位センサ８は、上定盤２における中心部及び外周縁部の間に配置されている。具体的には、上定盤２の中心から所定距離だけ離れた領域内に配置されている。この領域は、上定盤２の中心から半径ｒの４０％〜６０％の範囲に収まる領域Ｒであることが好ましい。   The upper surface plate 2 incorporates an eddy current displacement sensor 8 for measuring the distance to the lower surface plate 3 in order to detect the thickness of the workpiece 6. The eddy current displacement sensor 8 is disposed between the center portion and the outer peripheral edge portion of the upper surface plate 2. Specifically, the upper surface plate 2 is disposed in a region separated from the center by a predetermined distance. This region is preferably a region R that falls within a range of 40% to 60% of the radius r from the center of the upper surface plate 2.

図３は渦電流式変位センサ８の概略構成を示す拡大図である。図３に示すように、渦電流式変位センサ８は、上定盤２に形成された貫通孔２３内に配置されていて、その上部がセンサ支持部８１によって上定盤２の上面に支持されている。貫通孔２３は、渦電流式変位センサ８から全周にわたって隙間が空くように形成されている。また、渦電流式変位センサ８の下端面は、上定盤２の下面よりも上方に配置されている。この渦電流式変位センサ８の下端面が、距離測定時に測定対象に渦電流を放出する渦電流放出面８２となっている。渦電流放出面８２は、距離測定時における基準面でもある。   FIG. 3 is an enlarged view showing a schematic configuration of the eddy current displacement sensor 8. As shown in FIG. 3, the eddy current displacement sensor 8 is disposed in the through hole 23 formed in the upper surface plate 2, and the upper portion thereof is supported on the upper surface of the upper surface plate 2 by the sensor support portion 81. ing. The through hole 23 is formed so as to have a gap from the eddy current displacement sensor 8 over the entire circumference. Further, the lower end surface of the eddy current displacement sensor 8 is disposed above the lower surface of the upper surface plate 2. The lower end surface of the eddy current displacement sensor 8 is an eddy current emission surface 82 that emits an eddy current to the measurement object during distance measurement. The eddy current emission surface 82 is also a reference surface at the time of distance measurement.

渦電流式変位センサ８には、測定結果を基にワーク６の厚みを算出する算出部９が電気的に接続されている。この算出部９には、上定盤２側の研磨布２１の厚みｔ１と、下定盤３側の研磨布３１の厚みｔ２と、渦電流放出面８２から上定盤２の下面までの距離ｈ１とが記憶されている（図４（ａ）参照）。これらの値は研磨時においても一定であり、研磨によって変動するのは、ワーク６の厚みのみである。具体的に図４（ａ）では厚みＴ１であったワーク６が、研磨が進行すると図４（ｂ）に示すように厚みＴ２となる。算出部９は、研磨時に取得する渦電流式変位センサ８の測定結果Ｓ１，Ｓ２から厚みｔ１、厚みｔ２、距離ｈ１を引くことでワーク６の厚みを算出するようになっている。   The eddy current displacement sensor 8 is electrically connected to a calculation unit 9 that calculates the thickness of the workpiece 6 based on the measurement result. The calculation unit 9 includes a thickness t1 of the polishing cloth 21 on the upper surface plate 2, a thickness t2 of the polishing cloth 31 on the lower surface plate 3, and a distance h1 from the eddy current discharge surface 82 to the lower surface of the upper surface plate 2. Are stored (see FIG. 4A). These values are constant at the time of polishing, and only the thickness of the workpiece 6 is changed by polishing. Specifically, the workpiece 6 having a thickness T1 in FIG. 4A becomes a thickness T2 as shown in FIG. 4B when polishing progresses. The calculation unit 9 calculates the thickness of the workpiece 6 by subtracting the thickness t1, the thickness t2, and the distance h1 from the measurement results S1 and S2 of the eddy current displacement sensor 8 acquired during polishing.

次に、本実施形態の作用について説明する。
まず、ワーク６のセット時においては、上定盤２を上昇させて、キャリア７の各ワーク保持孔７３内にワーク６を嵌装させてから、上定盤２を下降させ、上定盤２と下定盤３とでワーク６を挟む。ワーク６の上面及び下面は、研磨布２１，３１により覆われた状態となる。 Next, the operation of this embodiment will be described.
First, when the work 6 is set, the upper surface plate 2 is raised, the work 6 is fitted in each work holding hole 73 of the carrier 7, and then the upper surface plate 2 is lowered, and the upper surface plate 2. And the work 6 is sandwiched between the lower surface plate 3. The upper surface and the lower surface of the workpiece 6 are covered with the polishing cloths 21 and 31.

ワーク６のセットが完了すると、上定盤２と下定盤３との間に、研磨剤供給装置によって研磨剤を供給させながら、上定盤２、下定盤３、サンギア４及びインターナルギア５を回転させる。これにより、ワーク６の上面及び下面と、キャリア７の下面が研磨布２１，３１によって研磨される。ここで、研磨が進行しても、自重によって上定盤２が下降して常に上定盤２の研磨布２１がワーク６の上面に当接している。つまり、渦電流式変位センサ８も上定盤２の下降に追従して下降している。
研磨時においては、渦電流式変位センサ８が渦電流放出面８２から下定盤３までの距離Ｈを常に測定している。算出部９は、渦電流式変位センサ８により測定された距離Ｈから厚みｔ１、厚みｔ２、距離ｈ１を引くことでワーク６の厚みを算出する。ワーク６の厚みが目的値となると研磨を終了する。 When the setting of the workpiece 6 is completed, the upper surface plate 2, the lower surface plate 3, the sun gear 4 and the internal gear 5 are rotated while the abrasive is supplied between the upper surface plate 2 and the lower surface plate 3 by the abrasive supply device. Let As a result, the upper and lower surfaces of the workpiece 6 and the lower surface of the carrier 7 are polished by the polishing cloths 21 and 31. Here, even if the polishing proceeds, the upper surface plate 2 is lowered by its own weight, and the polishing cloth 21 of the upper surface plate 2 is always in contact with the upper surface of the workpiece 6. That is, the eddy current type displacement sensor 8 also descends following the descending of the upper surface plate 2.
During polishing, the eddy current displacement sensor 8 always measures the distance H from the eddy current discharge surface 82 to the lower surface plate 3. The calculation unit 9 calculates the thickness of the workpiece 6 by subtracting the thickness t1, the thickness t2, and the distance h1 from the distance H measured by the eddy current displacement sensor 8. When the thickness of the workpiece 6 reaches the target value, the polishing is finished.

以上のように本実施形態によれば、キャリア７がワーク６の硬度よりも小さい素材から形成されているので、キャリア７から発生した切り粉がワーク６を傷つけてしまうことを防止することができる。また、キャリア７が非磁性体であるために、渦電流式変位センサ８による測定に影響を及ぼすことが防止されている。つまり、渦電流式変位センサ８は、キャリア７の影響を受けずに、渦電流放出面８２から下定盤３までの距離を正確に測定することが可能となっている。そして、渦電流式変位センサ８の測定結果に基づいて算出部９がワーク６の厚みを算出しているので、非磁性体からなるワーク６の厚みを正確に算出検出することができる。
なお、従来のようにキャリアまでの距離を測定することでワークの厚みを検出する場合に比べて、本実施形態では測定距離が長くなっている。このため、従来よりも大型な渦電流式変位センサ８を用いることが好ましい。具体的には、直径が１５ｍｍ以上の渦電流式変位センサ８を用いることが好ましい。 As described above, according to the present embodiment, since the carrier 7 is formed of a material smaller than the hardness of the workpiece 6, it is possible to prevent the chips generated from the carrier 7 from damaging the workpiece 6. . In addition, since the carrier 7 is a non-magnetic material, the measurement by the eddy current displacement sensor 8 is prevented from being affected. That is, the eddy current displacement sensor 8 can accurately measure the distance from the eddy current discharge surface 82 to the lower surface plate 3 without being affected by the carrier 7. And since the calculation part 9 is calculating the thickness of the workpiece | work 6 based on the measurement result of the eddy current type displacement sensor 8, the thickness of the workpiece | work 6 which consists of a nonmagnetic material can be calculated and detected correctly.
Note that the measurement distance is longer in this embodiment than in the case where the thickness of the workpiece is detected by measuring the distance to the carrier as in the prior art. For this reason, it is preferable to use the eddy current type displacement sensor 8 larger than the conventional one. Specifically, it is preferable to use an eddy current displacement sensor 8 having a diameter of 15 mm or more.

また、渦電流式変位センサ８の周囲に隙間が形成されているので、研磨による摩擦熱が上定盤２を介して渦電流式変位センサ８に熱伝導してしまうことを隙間によって抑制することができる。したがって、温度上昇による渦電流式変位センサ８の誤作動を防止することができる。
また、渦電流式変位センサ８は、上定盤２における中心部及び外周縁部の間に配置されている。この箇所は上定盤２の熱変形の影響が小さい箇所であるために、渦電流式変位センサ８がより正確に測定を行うことができる。 In addition, since a gap is formed around the eddy current displacement sensor 8, the gap prevents the frictional heat due to polishing from being thermally transferred to the eddy current displacement sensor 8 via the upper surface plate 2. Can do. Therefore, malfunction of the eddy current type displacement sensor 8 due to temperature rise can be prevented.
Further, the eddy current displacement sensor 8 is disposed between the center portion and the outer peripheral edge portion of the upper surface plate 2. Since this location is a location where the influence of the thermal deformation of the upper surface plate 2 is small, the eddy current displacement sensor 8 can measure more accurately.

なお、本発明は上記実施形態に限らず適宜変更可能である。以下の説明において、上記実施形態と同一部分は同一符号を付してその説明を省略する。   Note that the present invention is not limited to the above embodiment, and can be modified as appropriate. In the following description, the same parts as those in the above embodiment are denoted by the same reference numerals and the description thereof is omitted.

１ 研磨装置
２ 上定盤
３ 下定盤
４ サンギア
５ インターナルギア
６ ワーク
７ キャリア
８ 渦電流式変位センサ
９ 算出部
２１ 研磨布
２３ 貫通孔
３１ 研磨布
４１ 外歯
５１ 内歯
７１ 内歯
７２ 外歯
７３ ワーク保持孔
８１ センサ支持部
８２ 渦電流放出面 DESCRIPTION OF SYMBOLS 1 Polishing apparatus 2 Upper surface plate 3 Lower surface plate 4 Sun gear 5 Internal gear 6 Work 7 Carrier 8 Eddy current displacement sensor 9 Calculation part 21 Polishing cloth 23 Through-hole 31 Polishing cloth 41 External tooth 51 Internal tooth 71 Internal tooth 72 External tooth 73 Workpiece holding hole 81 Sensor support part 82 Eddy current discharge surface

Claims (2)

上面に研磨布が貼り付けられた磁性体からなる下定盤と、
非磁性体のワークを保持し、当該ワークとともに前記下定盤の研磨布上に載置される非磁性体のキャリアと、
前記キャリアにより保持された前記ワークの上面を研磨する研磨布が下面に貼り付けられ、前記下定盤の上方に昇降自在に配置された上定盤と、
前記上定盤に内蔵されて、前記下定盤までの距離を測定する渦電流式変位センサと、
前記渦電流式変位センサの測定結果を基に前記ワークの厚みを算出する算出部とを備え、
前記キャリアは、前記ワークの硬度よりも小さい素材によって形成されていることを特徴とする研磨装置。 A lower surface plate made of a magnetic material with a polishing cloth affixed to the upper surface;
A non-magnetic carrier that holds the non-magnetic workpiece and is placed on the polishing cloth of the lower surface plate together with the workpiece;
An upper surface plate that is attached to the lower surface with a polishing cloth that polishes the upper surface of the work held by the carrier, and is arranged to be movable up and down above the lower surface plate,
An eddy current displacement sensor built in the upper surface plate for measuring the distance to the lower surface plate;
A calculation unit that calculates the thickness of the workpiece based on the measurement result of the eddy current displacement sensor,
The polishing apparatus, wherein the carrier is made of a material smaller than the hardness of the workpiece. 請求項１記載の研磨装置において、
前記渦電流式変位センサの周囲には隙間が形成されていることを特徴とする研磨装置。 The polishing apparatus according to claim 1, wherein
A polishing apparatus, wherein a gap is formed around the eddy current displacement sensor.
JP2011013545A 2011-01-26 2011-01-26 Polishing device Pending JP2012152849A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011013545A JP2012152849A (en) 2011-01-26 2011-01-26 Polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011013545A JP2012152849A (en) 2011-01-26 2011-01-26 Polishing device

Publications (1)

Publication Number Publication Date
JP2012152849A true JP2012152849A (en) 2012-08-16

Family

ID=46835143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011013545A Pending JP2012152849A (en) 2011-01-26 2011-01-26 Polishing device

Country Status (1)

Country Link
JP (1) JP2012152849A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014147994A (en) * 2013-01-31 2014-08-21 Seiko Instruments Inc Wafer polishing method and manufacturing method of electronic device

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06238559A (en) * 1992-04-24 1994-08-30 Shin Etsu Chem Co Ltd Single-sided surface polishing
JPH07307317A (en) * 1994-05-16 1995-11-21 Nippon Steel Corp Semiconductor wafer polishing machine
JPH1086059A (en) * 1996-09-18 1998-04-07 Shinko Kagaku Kogyo Kk Polishing jig and its manufacture
JP2000198064A (en) * 1999-01-07 2000-07-18 Daido Steel Co Ltd Polishing machine carrier
JP2003117809A (en) * 2001-10-17 2003-04-23 Seiko Instruments Inc Double surface concurrent polishing device
JP2004363181A (en) * 2003-06-02 2004-12-24 Speedfam Co Ltd Work polishing method and device thereof
WO2006013996A1 (en) * 2004-08-02 2006-02-09 Showa Denko K.K. Method of manufacturing polishing carrier and silicon substrate for magnetic recording medium, and silicon substrate for magnetic recording medium
JP2006231471A (en) * 2005-02-25 2006-09-07 Speedfam Co Ltd Double-sided polishing machine and its sizing controlling method
JP2010023217A (en) * 2008-07-24 2010-02-04 Kyocera Chemical Corp Carrier disc for retaining article to be polished
JP2010120112A (en) * 2008-11-19 2010-06-03 Shin Etsu Handotai Co Ltd Carrier for double-sided polishing device, double-sided polishing device using the same, and double-sided polishing method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06238559A (en) * 1992-04-24 1994-08-30 Shin Etsu Chem Co Ltd Single-sided surface polishing
JPH07307317A (en) * 1994-05-16 1995-11-21 Nippon Steel Corp Semiconductor wafer polishing machine
JPH1086059A (en) * 1996-09-18 1998-04-07 Shinko Kagaku Kogyo Kk Polishing jig and its manufacture
JP2000198064A (en) * 1999-01-07 2000-07-18 Daido Steel Co Ltd Polishing machine carrier
JP2003117809A (en) * 2001-10-17 2003-04-23 Seiko Instruments Inc Double surface concurrent polishing device
JP2004363181A (en) * 2003-06-02 2004-12-24 Speedfam Co Ltd Work polishing method and device thereof
WO2006013996A1 (en) * 2004-08-02 2006-02-09 Showa Denko K.K. Method of manufacturing polishing carrier and silicon substrate for magnetic recording medium, and silicon substrate for magnetic recording medium
JP2006231471A (en) * 2005-02-25 2006-09-07 Speedfam Co Ltd Double-sided polishing machine and its sizing controlling method
JP2010023217A (en) * 2008-07-24 2010-02-04 Kyocera Chemical Corp Carrier disc for retaining article to be polished
JP2010120112A (en) * 2008-11-19 2010-06-03 Shin Etsu Handotai Co Ltd Carrier for double-sided polishing device, double-sided polishing device using the same, and double-sided polishing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014147994A (en) * 2013-01-31 2014-08-21 Seiko Instruments Inc Wafer polishing method and manufacturing method of electronic device

Similar Documents

Publication Publication Date Title
TWI572445B (en) Monitoring retaining ring thickness and pressure control
JP5924409B2 (en) Work polishing method and work polishing apparatus
US20060194511A1 (en) Thickness control method and double side polisher
TWI709457B (en) Surface polishing apparatus and carrier
CN107073683B (en) The processing unit (plant) of workpiece
JP2014061580A (en) Method for detecting abnormality in polishing of substrate, and polishing device
JP6015683B2 (en) Workpiece processing apparatus and workwork processing method
US7137867B2 (en) Thickness control method and double side polisher
KR20200122399A (en) Pad conditioner cutting rate monitoring
KR101020122B1 (en) Apparatus for polishing with multi polishing pad
CN106217234A (en) For polishing the system and method for substrate
JP2012152849A (en) Polishing device
KR101327146B1 (en) Method of recognizing the demage of consumables in chemical mechanical polishing apparatus
JP2014091190A (en) Service life detection method for abrasive pad
JP2008068338A (en) Polisher, polishing method and manufacturing method of semiconductor device
KR102243872B1 (en) Method of grinding workpiece
TW201532730A (en) Pad for supporting grinding disk
KR20210011145A (en) Driving unit measuring apparatus and silicon single crystal growing apparatus having same
JP5507799B2 (en) Semiconductor wafer polishing apparatus and polishing method
WO2017073265A1 (en) Method for polishing both sides of semiconductor wafer and apparatus for polishing both sides of semiconductor wafer
JP4799313B2 (en) Double-side polishing apparatus and method for detecting overlap of workpiece and carrier in double-side polishing apparatus
US20120196512A1 (en) Polishing pad and method of fabricating semiconductor device
JP7463142B2 (en) Polishing pad thickness measuring device
JP5889025B2 (en) Grinding equipment
JP2016159384A (en) Polishing device and polishing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140122

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141104

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141225

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150127