JP2012148405A - Electronic component element - Google Patents

Electronic component element Download PDF

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JP2012148405A
JP2012148405A JP2009121205A JP2009121205A JP2012148405A JP 2012148405 A JP2012148405 A JP 2012148405A JP 2009121205 A JP2009121205 A JP 2009121205A JP 2009121205 A JP2009121205 A JP 2009121205A JP 2012148405 A JP2012148405 A JP 2012148405A
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film
transparent conductive
sin
electronic component
siox
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Kenji Date
剣治 伊達
Katsunari Iwaki
克成 岩木
Masaaki Hirai
正明 平井
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Sharp Corp
Sanyo Shinku Kogyo KK
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Sharp Corp
Sanyo Shinku Kogyo KK
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Priority to JP2009121205A priority Critical patent/JP2012148405A/en
Priority to PCT/JP2010/057950 priority patent/WO2010134446A1/en
Publication of JP2012148405A publication Critical patent/JP2012148405A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/948—Layers comprising indium tin oxide [ITO]

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Laminated Bodies (AREA)
  • Liquid Crystal (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To protect a transparent conductive film not only protecting the transparent conductive film but preventing newly occurring defects by protecting the transparent conductive film.SOLUTION: An electronic component element 1 includes: a substrate 2, an ITO film 3 formed on the substrate 2; and a protection film 4 formed on the ITO film 3 to protect a surface of the ITO film 3. The protection film 4 is configured of at least a SiOx film 41 and a SiN film 12 formed of a Si compound containing N, and the SiN film 42 and the SiOx film 41 are laminated on the ITO film 3 in this order.

Description

本発明は、基板に透明導電膜を形成した電子部品素子に関する。   The present invention relates to an electronic component element in which a transparent conductive film is formed on a substrate.

基板に透明導電膜を形成した電子部品素子の従来技術に、基板の両面にＳｉＯ2膜を形成し、基板の一表面に形成したＳｉＯ2膜上に透明導電膜を形成するものがある（例えば、特許文献参照）。 The prior art electronic component element of forming the transparent conductive film on the substrate, an SiO 2 film is formed on both surfaces of the substrate is to form a transparent conductive film on the SiO 2 film formed on a surface of a substrate (e.g. , See patent literature).

この特許文献に記載の電子部品素子は、ディスプレイの表示部に用いられ、特許文献によれば、基板上に形成したＳｉＯ2膜上に透明導電膜を形成することで、反射防止効果を有する高透過率の電子部品素子が得られる。 The electronic component element described in this patent document is used in a display unit of a display. According to the patent document, a transparent conductive film is formed on a SiO 2 film formed on a substrate, thereby providing an antireflection effect. A transmissible electronic component element is obtained.

特開平１０−１９４７８３号公報JP 10-194783 A

ところで、上記した特許文献では、透明導電膜が最上位層となり露出した状態となるため、透明導電膜にキズがついたりする。   By the way, in the above-mentioned patent document, since the transparent conductive film becomes the uppermost layer and is exposed, the transparent conductive film is scratched.

そこで、上記課題を解決するために、本発明は、透明導電膜を保護し、さらに透明導電膜の保護だけでなく、透明導電膜を保護することで新たに発生する不具合も防止する電子部品素子を提供することを目的とする。   Therefore, in order to solve the above-mentioned problems, the present invention protects a transparent conductive film, and further protects the transparent conductive film, and also prevents an electronic component element newly generated by protecting the transparent conductive film. The purpose is to provide.

上記の目的を達成するため、本発明にかかる電子部品素子は、基板と、この基板上に形成された透明導電膜と、この透明導電膜上に形成され前記透明導電膜の表面を保護する保護膜とが設けられ、前記保護膜は、少なくとも、ＳｉＯｘ膜と、Ｎを含むＳｉ化合物からなるＳｉＮ膜とからなり、前記透明導電膜上に前記ＳｉＮ膜、前記ＳｉＯｘ膜の順に積層形成されて構成されることを特徴とする。   In order to achieve the above object, an electronic component element according to the present invention includes a substrate, a transparent conductive film formed on the substrate, and protection for protecting the surface of the transparent conductive film formed on the transparent conductive film. The protective film is composed of at least a SiOx film and a SiN film made of a Si compound containing N, and is formed by laminating the SiN film and the SiOx film in this order on the transparent conductive film. It is characterized by being.

本発明によれば、前記基板と前記透明導電膜と前記保護膜とが設けられ、前記保護膜は、少なくとも前記ＳｉＯｘ膜と前記ＳｉＮ膜とからなり、前記透明導電膜上に前記ＳｉＮ膜、前記ＳｉＯｘ膜の順に積層形成されて構成されるので、前記透明導電膜を保護し、さらに前記透明導電膜の保護だけでなく、前記透明導電膜を保護することで新たに発生した不具合も防止することが可能となる。   According to the present invention, the substrate, the transparent conductive film, and the protective film are provided, and the protective film includes at least the SiOx film and the SiN film, and the SiN film, Since the SiOx film is laminated and formed in order, the transparent conductive film is protected, and not only the transparent conductive film is protected, but also a new problem is prevented by protecting the transparent conductive film. Is possible.

具体的に、前記透明導電膜上に前記ＳｉＮ膜、前記ＳｉＯｘ膜の順に形成されるので、前記保護膜により前記透明導電膜を保護するとともに、前記ＳｉＮ膜により前記透明導電膜と前記ＳｉＯｘ膜との密着強度を高めることが可能となる。また、透過率などの光学特性も劣化しない。さらに、本発明によれば、前記透明導電膜上に前記ＳｉＮ膜を介在させて前記ＳｉＯｘ膜が形成されるので、当該電子部品素子の耐摩耗性や耐食性を向上させることが可能となる。特に、前記基板に前記透明導電膜と前記保護膜を形成した後に当該電子部品素子をアルコール洗浄した場合であっても、前記透明導電膜から前記保護膜が剥がれ難くなる。   Specifically, since the SiN film and the SiOx film are sequentially formed on the transparent conductive film, the transparent conductive film and the SiOx film are protected by the SiN film. It becomes possible to increase the adhesion strength of the. Further, optical characteristics such as transmittance are not deteriorated. Furthermore, according to the present invention, since the SiOx film is formed on the transparent conductive film with the SiN film interposed therebetween, it is possible to improve the wear resistance and corrosion resistance of the electronic component element. In particular, even when the electronic component element is washed with alcohol after forming the transparent conductive film and the protective film on the substrate, the protective film is difficult to peel off from the transparent conductive film.

前記構成において、前記ＳｉＯｘ膜は、ＳｉＯ2からなり、前記ＳｉＮ膜は、ＳｉＮ、ＳｉＯＮ、Ｓｉ3Ｎ4のいずれかからなってもよい。 In the above-described configuration, the SiOx film is made SiO 2, the SiN film, SiN, SiON, may consist either of Si 3 N 4.

この場合、前記ＳｉＮ膜は、ＳｉＮ、ＳｉＯＮ、Ｓｉ3Ｎ4のいずれかからなっても、色度に影響をしない膜構成とすることが可能となる。これは、ＳｉＯ2からなる前記ＳｉＯｘ膜を前記透明導電膜に密着強度良くさせるためであっても薄膜の前記ＳｉＮ膜で足りるためである。 In this case, even if the SiN film is made of any one of SiN, SiON, and Si 3 N 4 , it is possible to have a film configuration that does not affect chromaticity. This is because even if the SiOx film made of SiO 2 is used to improve the adhesion strength of the transparent conductive film, the thin SiN film is sufficient.

本発明によれば、透明導電膜を保護し、さらに透明導電膜の保護だけでなく、透明導電膜を保護することで新たに発生した不具合も防止することが可能となる。   According to the present invention, it is possible to protect not only a transparent conductive film but also a new problem caused by protecting the transparent conductive film.

図１は、本実施の形態にかかる電子部品素子の概略構成図である。FIG. 1 is a schematic configuration diagram of an electronic component element according to this embodiment.

以下、本発明の実施の形態について図面を参照して説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

本発明の実施の形態にかかる電子部品素子１は、ディスプレイの電子部品素子のディスプレイ部に用いられる。   The electronic component element 1 according to the embodiment of the present invention is used in a display unit of an electronic component element of a display.

具体的に、この電子部品素子１では、図１に示すように、ガラス基板からなる基板２の一表面２１上に、無機材料の導電膜であるＩＴＯ膜３と、このＩＴＯ膜３の表面を保護する保護膜４とが順に積層されている。なお、本実施の形態では、導電膜として透明導電膜であるＩＴＯ膜３を用いている。   Specifically, in the electronic component element 1, as shown in FIG. 1, an ITO film 3 that is a conductive film made of an inorganic material and a surface of the ITO film 3 are formed on one surface 21 of a substrate 2 made of a glass substrate. The protective film 4 to protect is laminated | stacked in order. In the present embodiment, the ITO film 3 which is a transparent conductive film is used as the conductive film.

また、基板２の他表面２２上に、透明導電膜であるＩＴＯ膜３が形成され、このＩＴＯ膜３上に、電極となるメタル部５（図１の記号Ｍ参照）と、ＩＴＯ膜３およびメタル部５の一部の表面を保護する保護膜４とが積層形成されている。   An ITO film 3 that is a transparent conductive film is formed on the other surface 22 of the substrate 2, and a metal portion 5 (see symbol M in FIG. 1) serving as an electrode, an ITO film 3, and A protective film 4 that protects a part of the surface of the metal part 5 is laminated.

保護膜４は、少なくとも、ＳｉＯｘ膜４１と、Ｎを含むＳｉ化合物からなるＳｉＮ膜４２とから構成され、ＩＴＯ膜３の一表面２１上にＳｉＮ膜４２、ＳｉＯｘ膜４１の順に積層形成されている。   The protective film 4 is composed of at least a SiOx film 41 and a SiN film 42 made of a Si compound containing N, and is formed by laminating the SiN film 42 and the SiOx film 41 in this order on one surface 21 of the ITO film 3. .

具体的に、本実施の形態にかかる保護膜４では、ＳｉＯｘ膜４１はＳｉＯ2からなり、その膜厚は５０〜１００ｎｍに設定されている。また、ＳｉＮ膜４２はＳｉＮからなり、その膜厚は１〜５ｎｍに設定されている。なお、本実施の形態にかかるＳｉＮ膜４２の膜厚は、透過率を８５％以上に保つことができる設定となっている。また、透過率は９０％以上であることがより好ましい。 Specifically, in the protective film 4 according to the present embodiment, the SiOx film 41 is made of SiO 2 and the film thickness is set to 50 to 100 nm. The SiN film 42 is made of SiN, and the film thickness is set to 1 to 5 nm. The film thickness of the SiN film 42 according to the present embodiment is set so that the transmittance can be maintained at 85% or more. Further, the transmittance is more preferably 90% or more.

上記した構成からなる電子部品素子１では、基板２の両表面（一表面２１，他表面２２）に、プラズマを使ったスパッタリング法によりＩＴＯ膜３を形成する。ＩＴＯ膜３形成後、基板２の他表面２２にメタル部５を形成して電極のパターンニングを行い、電極を構成する。メタル部５の形成後、基板の両表面２１，２２のＩＴＯ膜３およびメタル部５上に、プラズマを使ったスパッタリング法により保護膜４のうち、ＳｉＮ膜４２を形成し、さらにＳｉＮ膜４２上にＳｉＯｘ膜４１を形成する。すなわち、基板の両表面２１，２２のＩＴＯ膜３およびメタル部５上に、ＳｉＮ膜４２、ＳｉＯｘ膜４１を順に積層形成して、メタル部５の電極による配線パターンを形成した基板２を構成する。   In the electronic component element 1 having the above-described configuration, the ITO film 3 is formed on both surfaces (one surface 21 and the other surface 22) of the substrate 2 by a sputtering method using plasma. After the ITO film 3 is formed, the metal part 5 is formed on the other surface 22 of the substrate 2 to perform patterning of the electrode, thereby constituting the electrode. After the formation of the metal part 5, the SiN film 42 of the protective film 4 is formed on the ITO film 3 and the metal part 5 on both surfaces 21 and 22 of the substrate by sputtering using plasma, and further on the SiN film 42 Then, the SiOx film 41 is formed. In other words, the SiN film 42 and the SiOx film 41 are sequentially laminated on the ITO film 3 and the metal part 5 on both surfaces 21 and 22 of the substrate to form the substrate 2 in which the wiring pattern by the electrodes of the metal part 5 is formed. .

上記したように、本実施の形態にかかる電子部品素子１によれば、基板２とＩＴＯ膜３と保護膜４とが設けられ、保護膜４はＳｉＯｘ膜４１とＳｉＮ膜４２とから構成され、ＩＴＯ膜３上にＳｉＮ膜４２、ＳｉＯｘ膜４１の順に積層形成されるので、ＩＴＯ膜３を保護し、さらにＩＴＯ膜３の保護だけでなく、ＩＴＯ膜３を保護することで新たに発生した不具合も防止することができる。   As described above, according to the electronic component element 1 according to the present embodiment, the substrate 2, the ITO film 3, and the protective film 4 are provided, and the protective film 4 includes the SiOx film 41 and the SiN film 42, Since the SiN film 42 and the SiOx film 41 are laminated on the ITO film 3 in this order, not only the ITO film 3 is protected, but also the ITO film 3 is not only protected but also a new problem that occurs. Can also be prevented.

具体的に、ＩＴＯ膜３上にＳｉＮ膜４２、ＳｉＯｘ膜４１の順に形成されるので、保護膜４によりＩＴＯ膜３を保護するとともに、ＳｉＮ膜４２によりＩＴＯ膜３とＳｉＯｘ膜４１との密着強度を高めることができる。また、透過率などの光学特性も劣化しない。さらに、本実施の形態によれば、ＩＴＯ膜３上にＳｉＮ膜４２を介在させてＳｉＯｘ膜４１が形成されるので、当該電子部品素子１の耐摩耗性や耐食性を向上させることができる。特に、基板２にＩＴＯ膜３と保護膜を形成した後に当該電子部品素子１をアルコール洗浄した場合であっても、ＩＴＯ膜３から保護膜４が剥がれ難くなる。   Specifically, since the SiN film 42 and the SiOx film 41 are formed in this order on the ITO film 3, the protective film 4 protects the ITO film 3 and the SiN film 42 adheres to the ITO film 3 and the SiOx film 41. Can be increased. Further, optical characteristics such as transmittance are not deteriorated. Furthermore, according to the present embodiment, since the SiOx film 41 is formed on the ITO film 3 with the SiN film 42 interposed, the wear resistance and corrosion resistance of the electronic component element 1 can be improved. In particular, even when the electronic component element 1 is washed with alcohol after forming the ITO film 3 and the protective film on the substrate 2, the protective film 4 is hardly peeled off from the ITO film 3.

また、ＳｉＯｘ膜４１はＳｉＯ2からなり、ＳｉＮ膜４２はＳｉＮからなるので、色度に影響をしない膜構成とすることができる。これは、ＳｉＯ2からなるＳｉＯｘ膜４１をＩＴＯ膜３に密着強度良くさせるためであっても薄膜のＳｉＮ膜４２で足りるためである。 Further, since the SiOx film 41 is made of SiO 2 and the SiN film 42 is made of SiN, a film configuration that does not affect the chromaticity can be obtained. This is because even if the SiOx film 41 made of SiO 2 is made to adhere to the ITO film 3 with good adhesion strength, a thin SiN film 42 is sufficient.

なお、本実施の形態では、基板２にガラス基板を用いているが、これに限定されるものではなく、セラミックなどの他の材料であってもよい。   In the present embodiment, a glass substrate is used as the substrate 2, but the present invention is not limited to this, and other materials such as ceramics may be used.

また、本実施の形態では、基板２の一表面２１上に、ＩＴＯ膜３と保護膜４とが順に積層されているが、これに限定されるものではなく、基板２の他表面２２上にＩＴＯ膜３と保護膜４が積層形成されてもよい。   Further, in the present embodiment, the ITO film 3 and the protective film 4 are sequentially laminated on the one surface 21 of the substrate 2, but the present invention is not limited to this, and the other surface 22 on the substrate 2 is not limited thereto. The ITO film 3 and the protective film 4 may be laminated.

また、本実施の形態では、ディスプレイの電子部品素子のディスプレイ部に本発明を適用しているが、これに限定されるものではなく、配線パターンを形成する電子部品素子であれば他の形態ものであってもよい。例えば、他の電子回路に用いる半導体素子や、太陽電池モジュールなどの屋外で用いられる電子部品素子などであってもよい。   In the present embodiment, the present invention is applied to the display portion of the electronic component element of the display. However, the present invention is not limited to this, and any other form may be used as long as the electronic component element forms a wiring pattern. It may be. For example, it may be a semiconductor element used in other electronic circuits, an electronic component element used outdoors such as a solar cell module, or the like.

また、本実施の形態では、ＳｉＮ膜４２としてＳｉＮを材料としているが、これは好適な例であり、これに限定されるものではなく、Ｎを含むＳｉ化合物からなるものであれば、他にＳｉＯＮ、Ｓｉ3Ｎ4であってもよい。なお、本実施の形態では、便宜上ＳｉＮ膜という用語を用いているが、これはＮを含むＳｉ化合物からなる膜のことをいう。 In the present embodiment, SiN is used as the material for the SiN film 42. However, this is a preferred example, and the present invention is not limited to this. SiON or Si 3 N 4 may be used. Note that in this embodiment, the term SiN film is used for convenience, but this means a film made of a Si compound containing N.

また、本実施の形態では、ＳｉＯｘ膜４１としてＳｉＯ2を材料としているが、これは好適な例であり、これに限定されるものではなく、ＳｉＯ3などの他のＳｉＯｘであってもよい。 In the present embodiment, SiO 2 is used as the material for the SiOx film 41. However, this is a preferred example, and the present invention is not limited to this. Other SiOx such as SiO 3 may be used.

また、本実施の形態では、保護膜４がＳｉＮ膜４２とＳｉＯｘ膜４１とを積層した構成からなるが、これに限定されるものではなく、ＳｉＯｘ膜４１に更に別の膜が積層形成されてもよい。すなわち、保護膜４は、少なくともＳｉＮ膜４２とＳｉＯｘ膜４１とが基板２上に順に積層されていれば、その上にさらに膜が積層されてもよい。   In the present embodiment, the protective film 4 has a configuration in which the SiN film 42 and the SiOx film 41 are laminated. However, the present invention is not limited to this, and another film is laminated on the SiOx film 41. Also good. That is, as long as at least the SiN film 42 and the SiOx film 41 are sequentially laminated on the substrate 2, the protective film 4 may be further laminated thereon.

また、本実施の形態では、導電膜としてＩＴＯ膜３を用いているが、これに限定されるものではなく、無機材料の導電膜であってその上層に積層するＳｉＯｘ膜との密着性をＳｉＮ膜を介在させることで強めるＩＴＯ膜と同等の成分からなる材料であればよい。   In the present embodiment, the ITO film 3 is used as the conductive film. However, the present invention is not limited to this, and the adhesion with the SiOx film, which is a conductive film made of an inorganic material and is laminated thereon, is SiN. Any material composed of the same components as the ITO film strengthened by interposing the film may be used.

なお、本発明は、その精神や主旨または主要な特徴から逸脱することなく、他のいろいろな形で実施することができる。そのため、上述の実施例はあらゆる点で単なる例示にすぎず、限定的に解釈してはならない。本発明の範囲は特許請求の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求の範囲の均等範囲に属する変形や変更は、全て本発明の範囲内のものである。   It should be noted that the present invention can be implemented in various other forms without departing from the spirit, gist, or main features. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

本発明では、電子部品に用いられる電子部品素子（配線パターンを施した素子）に有用であり、具体的に、半導体素子やディスプレイ用素子、太陽電池モジュールなどの屋外で用いられる電子部品素子などが挙げられる。   In the present invention, it is useful for an electronic component element (an element having a wiring pattern) used for an electronic component. Specifically, an electronic component element used outdoors such as a semiconductor element, a display element, a solar cell module, etc. Can be mentioned.

１ 電子部品素子
２ 基板
２１ 一表面
２２ 他表面
３ ＩＴＯ膜
４ 保護膜
４１ ＳｉＯｘ膜
４２ ＳｉＮ膜 DESCRIPTION OF SYMBOLS 1 Electronic component element 2 Substrate 21 One surface 22 Other surface 3 ITO film 4 Protective film 41 SiOx film 42 SiN film

Claims (2)

電子部品素子において、
基板と、この基板上に形成された透明導電膜と、この透明導電膜上に形成され前記透明導電膜の表面を保護する保護膜とが設けられ、
前記保護膜は、少なくとも、ＳｉＯｘ膜と、Ｎを含むＳｉ化合物からなるＳｉＮ膜とから構成され、
前記透明導電膜上に前記ＳｉＮ膜、前記ＳｉＯｘ膜の順に積層形成されたことを特徴とする電子部品素子。 In electronic component elements,
A substrate, a transparent conductive film formed on the substrate, and a protective film formed on the transparent conductive film and protecting the surface of the transparent conductive film;
The protective film is composed of at least a SiOx film and a SiN film made of a Si compound containing N,
An electronic component element, wherein the SiN film and the SiOx film are laminated in this order on the transparent conductive film. 請求項１に記載の電子部品素子において、
前記ＳｉＯｘ膜は、ＳｉＯ2からなり、
前記ＳｉＮ膜は、ＳｉＮ、ＳｉＯＮ、Ｓｉ3Ｎ4のいずれかからなることを特徴とする電子部品素子。 The electronic component element according to claim 1,
The SiOx film is made SiO 2,
The electronic component element, wherein the SiN film is made of any one of SiN, SiON, and Si 3 N 4 .
JP2009121205A 2009-05-19 2009-05-19 Electronic component element Pending JP2012148405A (en)

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US10816861B2 (en) 2016-03-22 2020-10-27 Toppan Printing Co., Ltd. High transmission ITO film-coated glass

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JP6056150B2 (en) * 2011-04-08 2017-01-11 日亜化学工業株式会社 Semiconductor light emitting device
FR2987618B1 (en) * 2012-03-05 2014-02-28 Saint Gobain ANTICONDENSATION GLAZING

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JP3637078B2 (en) * 1994-08-29 2005-04-06 三井化学株式会社 Gas barrier low moisture permeability insulating transparent electrode substrate and use thereof
JPH08127097A (en) * 1994-11-01 1996-05-21 Mitsui Toatsu Chem Inc Transparent conductive film
JP2006297730A (en) * 2005-04-20 2006-11-02 Dainippon Printing Co Ltd Gas-barrier laminate
JP2006352073A (en) * 2005-05-20 2006-12-28 Fujifilm Holdings Corp Conductive pattern material, translucent conductive film, translucent electromagnetic wave shield film, optical filter, transparent conductive sheet, electroluminescence element, and flat light source system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10816861B2 (en) 2016-03-22 2020-10-27 Toppan Printing Co., Ltd. High transmission ITO film-coated glass

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