JP2012134328A - Semiconductor light-emitting element, semiconductor layer formation method, semiconductor light-emitting element manufacturing method and electrical equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can reduce deterioration in crystallinity of a GaN layer formed on an AIN film, which is caused by impurities contained in the AIN film formed on a sapphire substrate as a buffer layer thereby to enhance yield.SOLUTION: A semiconductor light-emitting element 10 comprises a sapphire substrate 11, an AIN film 12 formed on the sapphire substrate 11 as a buffer layer buffering lattice mismatch, a non-doped GaN layer 13 formed on the AIN film 12 and a laminate structure formed on the non-doped GaN layer 13 and including a light-emitting region. The AIN film 12 is formed on the sapphire substrate 11 such that a carbon concentration of the AIM film 12 becomes 0.2 at% and under and a chlorine concentration of the AIM film 12 becomes 0.01 at% and under.

Description

  The present invention relates to a semiconductor light emitting device, a method for forming a semiconductor layer, a method for manufacturing a semiconductor light emitting device, and an electrical device, and more particularly to a technique for epitaxially growing a group III-V semiconductor crystal having good crystallinity on an insulating substrate. .

  III-V compound semiconductors such as GaN have a direct transition type band gap of energy corresponding to the visible light to ultraviolet light region, and can emit light with high efficiency. Therefore, LED (light emitting diode) and LD (laser) A semiconductor layer such as a GaN layer is generally grown by growing a crystal on a single crystal wafer of a different material in consideration of mechanical strength.

There is a large lattice mismatch between such a heterogeneous substrate and a group III nitride semiconductor crystal epitaxially grown thereon. For example, there is a lattice mismatch of 16% between sapphire (Al ₂ O ₃ ) and gallium nitride (GaN) and 6% between SiC and gallium nitride.

  In general, when such a large lattice mismatch exists, it is difficult to directly epitaxially grow a crystal on a substrate, and a crystal with good crystallinity cannot be obtained even if grown.

  Therefore, when epitaxially growing a semiconductor crystal such as GaN on a sapphire single crystal substrate or SiC single crystal substrate by metal organic chemical vapor deposition (MOCVD), a low-temperature buffer layer composed of aluminum nitride (AlN) or AlGaN In general, a method of first depositing a so-called layer on a substrate and epitaxially growing a semiconductor crystal such as GaN on the substrate at a high temperature has been performed.

  Incidentally, Patent Document 1 discloses a film forming method in consideration of the ultimate vacuum of the chamber during film formation in order to obtain a group III nitride semiconductor crystal having a good crystal structure.

  FIG. 6 shows a semiconductor multilayer structure A obtained by using the film forming method disclosed in Patent Document 1.

  The stacked structure A includes a substrate 9 made of sapphire, an AlN buffer layer 8 formed thereon, an n-type GaN layer 7 formed on the buffer layer 8, and Ge stacked on the substrate. Quantum well formed by alternately laminating barrier layers 3 and well layers 4 on the n-type GaN layer 6 doped with n, clad layers 5 formed on the n-type GaN layers 6, and the clad layers 5 The layer 20 has a diffusion prevention layer 2 laminated thereon, and a P-type semiconductor layer 1 as a group III nitride formed on the diffusion prevention layer 2.

  In the film forming method disclosed in Patent Document 1, when the AlN buffer layer 8 is formed by a sputtering apparatus, the ultimate vacuum in the sputtering apparatus is set in the range of 1E-3 Pa to 6E-6 Pa.

  This Patent Document 1 shows the result of X-ray rocking curve (XRC) measurement of the undoped GaN layer 7 grown by the above method.

  For this measurement, a Cu β-ray X-ray generation source was used as the light source, and FIG. 7 shows the dependency of the XRC spectrum half-value width of the (10-10) plane serving as an index of dislocation density (twist) on the sputtering pressure. Yes.

  As shown in FIG. 7, when the ultimate vacuum of the chamber at the time of sputter deposition is lowered, the half-width of the GaN (10-10) XRC peak changes depending on the ultimate vacuum at the time of deposition.

  That is, when the ultimate vacuum is 1.0 × 10 −3 Pa, the full width at half maximum is 0.53. However, when the ultimate vacuum is 5.0 × 10 −4 Pa, the full width at half maximum is 0.45, and the ultimate vacuum is 1.0. At x10-4 Pa, the full width at half maximum is 0.40 degrees, when the ultimate vacuum is 3.5 x 10-5 Pa, the full width at half maximum is 0.28 degrees, and at the ultimate vacuum of 2.0 x 10-5 Pa, the half width is Is 0.30 degree, and further, when the ultimate vacuum is 6.0 × 10 −6 Pa, the full width at half maximum is 0.25 degree. Therefore, it can be seen from FIG. 7 that the crystallinity is improved stepwise as the ultimate vacuum is improved.

JP 2009-54767 A

  However, in the conventional film formation method, even if the ultimate vacuum in the film formation chamber is kept high, the quality of the AlN film deteriorates when the sapphire substrate is exposed to a vacuum state of about 3E-5 Pa at a high temperature. However, there is a problem that a high-quality GaN film cannot be epitaxially grown.

  The present invention has been made in order to solve the above-described problems. A semiconductor light emitting device capable of epitaxially growing a GaN film on an AlN film having a small impurity content and improving yield. It is an object to obtain a method for forming a semiconductor layer, a method for manufacturing a semiconductor light emitting element, and an electrical device.

  A semiconductor light emitting device according to the present invention is a semiconductor light emitting device having a III-V group compound semiconductor layer formed on an insulating substrate, comprising an AlN film formed as a buffer layer on the insulating substrate, The AlN film is formed so that the carbon concentration is 0.2 at% or less and the chlorine content is 0.01 at% or less, thereby achieving the above object.

  The present invention provides the semiconductor light emitting device according to claim 1, wherein the insulating substrate is a sapphire substrate, and the III-V compound semiconductor layer is a GaN layer.

  According to the present invention, in the semiconductor light emitting device, the GaN layer is preferably a non-doped GaN layer.

  The present invention provides the semiconductor light-emitting device, wherein the second conductivity type GaN layer is formed on the non-doped GaN layer, the second conductivity type GaN layer is formed on the first conductivity type GaN layer, and the multiple quantum well layer is a light emitting region between the two GaN layers. It is preferable to have a laminated structure formed by laminating so as to be positioned.

  In the semiconductor light emitting device according to the present invention, it is preferable that the multiple quantum well layer has a structure in which a GaN layer as a barrier layer and an InGaN layer as a well layer are alternately stacked.

  In the semiconductor light emitting device according to the present invention, it is preferable that a transparent film having conductivity is formed on the entire surface of the second conductivity type GaN layer.

  In the semiconductor light emitting device according to the present invention, the transparent film is preferably an ITO film made of indium tin oxide.

  According to the present invention, in the semiconductor light emitting device, an upper electrode is disposed on the ITO film, and the ITO film, the second conductivity type GaN layer, and the multiple quantum well layer of the first conductivity type GaN layer. It is preferable that a lower electrode is formed on the exposed portion from which is removed.

  According to the present invention, in the above semiconductor light emitting device, the upper electrode and the lower electrode are each a laminated structure in which an Au layer is formed on a Cr layer, a laminated structure in which an Au layer is laminated on an Ni layer, or an Ni layer It is preferable to have a laminated structure in which an Au layer is formed on a Pt layer.

  A method for forming a semiconductor layer according to the present invention is a method for forming a III-V semiconductor layer on an insulating substrate, the step of forming an AlN film on the insulating substrate, and the AlN Forming a group III-V semiconductor layer on the film, and the step of forming the AlN film includes subjecting the heat treatment to the insulating substrate to evaporate impurity components contained on the surface of the insulating substrate. The method includes a step of performing in a high vacuum state and a step of depositing AlN, which is a material of the AlN film, on the insulating substrate that has been subjected to the heat treatment, whereby the above object is achieved.

  In the method for forming a semiconductor layer according to the present invention, it is preferable that the insulating substrate is a sapphire substrate, and the III-V group semiconductor layer is a GaN layer.

  In the method for forming a semiconductor layer according to the present invention, the high vacuum state in the heat treatment is preferably a vacuum state of 3E-5 Pa or less.

  In the method for forming a semiconductor layer according to the present invention, the high vacuum state in the heat treatment is preferably a vacuum state of 1.5E-5 Pa or less.

  In the method for forming a semiconductor layer according to the present invention, the heat treatment for the insulating substrate is preferably performed at 470 ° C.

  A method of manufacturing a semiconductor light emitting device according to the present invention is a method of manufacturing a semiconductor light emitting device using a group III-V compound semiconductor, the step of forming a group III-V compound semiconductor layer on an insulating substrate, Forming a device structure constituting the semiconductor light emitting device on the group III-V compound semiconductor layer, and forming the group III-V compound semiconductor layer includes performing a heat treatment on the insulating substrate. Performing in a high vacuum state so that impurity components contained on the surface of the insulating substrate are evaporated, depositing AlN as a material of the AlN film on the insulating substrate subjected to the heat treatment, and the AlN Forming a group III-V compound semiconductor layer on the film, thereby achieving the above object.

  According to the present invention, in the method for manufacturing a semiconductor light emitting device, the high vacuum state during the heat treatment on the insulating substrate is preferably a vacuum state of 3E-5 Pa or less.

  According to the present invention, in the method for manufacturing a semiconductor light emitting device, the step of forming the device structure includes a first conductivity type III-V group semiconductor layer, a multiple quantum well layer, and a III-V group compound semiconductor layer, A step of sequentially laminating a second conductivity type III-V group semiconductor layer to form a semiconductor multilayer structure having the multiple quantum well layer as a light emitting region; and a conductive property on the second conductivity type III-V group semiconductor layer. Forming a transparent film, a step of forming an upper electrode on the conductive transparent film, a second conductive type III-V group semiconductor layer, and a multiple quantum well layer And forming a lower electrode on the first conductivity type III-V group semiconductor layer exposed by removal.

  The present invention provides the method for manufacturing a semiconductor light emitting device, wherein the first conductivity type III-V group semiconductor layer is an n-type GaN layer, and the second conductivity type III-V group semiconductor layer is a p-type GaN layer. The multiple quantum well layer is formed by alternately laminating a GaN layer as a barrier layer and an InGaN layer as a well layer, and the upper electrode and the lower electrode are Au layers on a Cr layer. It is preferable to have a laminated structure in which layers are formed, a laminated structure in which an Au layer is laminated on a Ni layer, or a laminated structure in which an Au layer is formed on a Ni layer via a Pt layer.

  The electrical device according to the present invention is an electrical device including a light source, and the light source includes the above-described semiconductor light emitting element according to the present invention, thereby achieving the above-described object.

  Next, the operation will be described.

  In the present invention, since the AlN film formed on the insulating substrate is formed so that the carbon concentration is 0.2 at% or less and the chlorine concentration is 0.01 at% or less, the AlN film is formed on the AlN film. It is possible to reduce the influence of the deterioration of crystallinity due to impurities contained in the AlN film over the III-V group compound semiconductor layer to be formed.

  In the present invention, before the AlN film is formed on the insulating substrate, by maintaining a high degree of vacuum when the insulating substrate is heated, impurities remaining on the surface of the insulating substrate are reduced, and the insulating substrate is reduced. The damage received will be reduced. As a result, a high-quality AlN film with a low impurity concentration is formed on the insulating substrate as a base for forming a III-V group compound semiconductor layer such as GaN. Crystallinity is formed on the insulating substrate. It is possible to epitaxially grow a higher GaN film.

  As described above, according to the present invention, the degree of vacuum when raising the temperature to the film formation temperature is maintained at a high degree of vacuum, for example, 2E-5 Pa or less, preferably 1.5E-5 Pa or less. A small amount of AlN film can be formed. Thus, by epitaxially growing a GaN film on an AlN film having a small impurity content, a III-V group compound semiconductor device such as an LED can be produced with a high yield.

FIG. 1 is a diagram for explaining a semiconductor light emitting device according to Embodiment 1 of the present invention, and shows a cross-sectional structure of the semiconductor light emitting device. FIG. 2 is a schematic diagram for explaining a sputtering apparatus used for manufacturing a semiconductor light emitting device according to Embodiment 1 of the present invention, and shows a schematic configuration thereof. FIG. 3 is a cross-sectional view illustrating a process of forming an AlN film on a sapphire substrate in order of steps (FIGS. (A) to (c)). FIG. 4 is a diagram illustrating a processing procedure in a process of forming an AlN film on a sapphire substrate. FIG. 5 is a diagram illustrating a lighting device using the semiconductor light emitting element of Embodiment 1 as a light source as Embodiment 2 of the present invention, and shows a structure of a lamp in which the semiconductor light emitting element is packaged with a mold resin. . FIG. 6 shows a semiconductor stacked structure in a semiconductor light emitting element formed by using the conventional film forming method disclosed in Patent Document 1. FIG. 7 is a diagram showing the sputtering pressure dependence of the half width of the (10-10) XRC peak of the GaN layer obtained by the conventional film forming method disclosed in Patent Document 1. In FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 is a diagram for explaining a semiconductor light emitting device according to Embodiment 1 of the present invention, and shows a cross-sectional structure of the semiconductor light emitting device.

  The semiconductor light emitting device 10 according to the first embodiment includes a sapphire substrate (insulating substrate) 11, an AlN film 12 formed on the sapphire substrate 11 as a buffer layer that alleviates lattice mismatch, and an AlN film 12. And a non-doped GaN layer 13 formed.

  Here, the AlN film 12 is formed such that the carbon concentration is 0.2 at% or less and the chlorine content is 0.01 at% or less.

  The semiconductor light emitting device 10 has a laminated structure formed on the non-doped GaN layer 13, and this laminated structure emits a p-type GaN layer 16 on an n-type GaN layer 14 and emits light between the GaN layers. The multi-quantum well layer 15 serving as a region is laminated so as to be interposed.

  The multiple quantum well layer 15 has a structure in which GaN layers 15a as barrier layers and InGaN layers 15b as well layers are alternately stacked. Here, a conductive transparent film (transparent conductive film) 17 is formed on the entire surface of the p-type GaN layer 16. As this transparent conductive film, an ITO film made of indium tin oxide is used. The transparent conductive film 17 functions to make the current density from the electrode formed thereon uniform in the plane of the p-type GaN layer 16.

  An upper electrode 18b is disposed on the ITO film 17, and an exposed portion of the n-type GaN layer 14 from which the ITO film 17, the p-type GaN layer 16, and the multiple quantum well layer 15 are removed is as follows. A lower electrode 18a is formed. The upper electrode 18b and the lower electrode 18a have a laminated structure in which an Au layer is formed on a Ni layer via a Pt layer. However, the structure of these electrodes may be a laminated structure in which an Au layer is formed on a Cr layer, or a laminated structure in which an Au layer is laminated on a Ni layer.

  Next, a method for manufacturing the semiconductor light emitting device according to Embodiment 1 will be described.

  First, an AlN film 12 is formed as a buffer layer on the sapphire substrate 11 to a thickness of about 300 angstroms by sputtering.

  Next, a non-doped GaN layer 13 is formed to a thickness of about 6 to 7 μm on the AlN film 12 by MOCVD. Thereafter, an n-type GaN layer 14, a multiple quantum well layer 15 as a light emitting layer, and a p-type GaN layer are sequentially formed on the non-doped GaN layer 13 by epitaxial growth, and then an ITO film 17 is formed on the p-type GaN layer 16. Form. Here, the multiple quantum well layer 15 is formed by alternately laminating a GaN layer 15a as a barrier layer and an InGaN layer 15b as a well layer.

  Thereafter, an upper electrode 18b is formed on the ITO film 17, and the ITO film 17, the p-type GaN layer 16, and the multiple quantum well layer 15 are selectively removed and exposed on the n-type GaN layer. The lower electrode 18a is formed.

  Hereinafter, the sputtering process for growing the AlN film will be described in detail.

  First, this sputtering apparatus will be described.

  FIG. 2 is a schematic diagram schematically showing a configuration of a sputtering apparatus used for the sputtering process.

The sputtering apparatus 100 is provided in a chamber 100a for performing a sputtering process, a wafer stage 101 for placing a wafer Wf on the chamber 100a, and disposed above the wafer stage 101 and used for film formation. It has a solid material (target) 102 and a power source 103 in which a cathode is connected to the solid material 102 and an anode is installed. Here, the wafer stage 101 incorporates heating means such as a heater 101a for heating the wafer, and the potential of the wafer stage 101 is in a floating state. Further, a gas exhaust port 105 for evacuating is provided at the bottom of the chamber 100a, and a film forming source gas (N ₂ gas) is supplied to the side of the chamber 100a. A gas supply port 104a and a gas supply port 104b for supplying an inert gas (Ar gas) are provided.

  Next, a process for forming an AlN film on a sapphire substrate will be described.

  FIG. 3 is a cross-sectional view illustrating a process of forming an AlN film on a sapphire substrate in order of steps (FIGS. (A) to (c)). FIG. 4 is a diagram illustrating a processing procedure in a process of forming an AlN film on a sapphire substrate.

  First, the chamber 100a of the sputtering apparatus is evacuated to a high vacuum state (step S1), and in this state, the wafer Wf is loaded into the chamber 100a and placed on the wafer stage 101 (step S2). The wafer Wf is annealed by heating (step S3).

  The ultimate vacuum before forming the AlN film is a high vacuum state of 1.5E-5 Pa or less, and the wafer Wf is annealed at 470 ° C. Thereby, impurity components on the substrate surface (wafer surface) are evaporated.

  In the actual annealing treatment, the degree of vacuum once deteriorated to 2E-5 Pa, and then returned to 1.5E-5 Pa in about 10 minutes.

Subsequently, N ₂ gas, which is a source gas, and an inert gas (Ar gas) for sputtering are introduced into the chamber 100a from the gas supply ports 104a and 104b, respectively (step S4), and a voltage is applied to the target 102 by the power source 103. Is applied to perform plasma discharge in the chamber (step S5), and AlN is deposited on the sapphire substrate 11 to form an AlN film 12 (FIGS. 3A and 3B). Here, plasma discharge may be performed by introducing only N ₂ gas into the chamber.

  Thereafter, the sapphire substrate 11 on which the AlN film 12 is formed is moved from the sputtering apparatus to the MOCVD apparatus, and a non-doped GaN layer 13 is formed on the AlN film 12 (FIG. 3C).

  Next, the function and effect of the present invention will be described.

  Thus, in the first embodiment, before forming the AlN film on the sapphire substrate 11, the sapphire substrate 11 is in a high vacuum state with an ultimate vacuum of 2E-5Pa or less, preferably 1.5E-5Pa or less. Since the AlN film 12 is deposited on the sapphire substrate 11 after annealing at 470 ° C. to evaporate the impurity components on the substrate surface, a high-quality blue LED can be formed.

  The AlN film thus formed contains 0.2 at% or less of carbon and 0.01% or less of chlorine, and is formed on the n-type GaN layer 14 via the non-doped GaN layer 14. It has been confirmed that the semiconductor light emitting device 10 having a laminated structure including the GaN layer 14, the multiple quantum well layer 15, and the p-type GaN layer 16 can be formed as a blue LED with a good yield.

  On the other hand, as a comparative example, for a sample (sapphire substrate) heated to the same temperature (470 ° C.) in a chamber having an ultimate vacuum of 2E-5 Pa, after the vacuum degree once deteriorated to 4E-5 Pa by annealing treatment, It has been confirmed that it returns to 3E-5 Pa in 10 minutes.

  After that, the AlN film obtained by film formation in a sputtering chamber having an ultimate vacuum of 1.5E-5 Pa contains 0.5 at% carbon and 0.03 at% chlorine, and the LED characteristics are as follows. It has been confirmed that the defect rate is as high as 1.8 times compared to the case of using the AlN film obtained by the AlN film forming method of Mode 1. This is because when the degree of vacuum when the temperature of the sapphire substrate is raised before the formation of the AlN film deteriorates, impurities remain on the surface of the sapphire substrate and are taken into the AlN film formed on the sapphire substrate. This indicates that the film quality deteriorates.

  Thus, in the present embodiment, the AlN film 12 formed on the sapphire substrate 11 is formed so that the carbon concentration is 0.2 at% or less and the chlorine concentration is 0.01 at% or less. The influence of the deterioration of crystallinity due to these impurities contained in the AlN film over the III-V group compound semiconductor layer formed on the AlN film can be reduced.

  Further, by maintaining a high degree of vacuum when the sapphire substrate 12 is heated before the AlN film 12 is formed on the sapphire substrate 11, impurities remaining on the surface of the sapphire substrate 12 are reduced, and the sapphire substrate 12 receives. Damage will be reduced. As a result, a high-quality AlN film having a low impurity concentration is formed on the sapphire substrate 12 as a base for forming the GaN layer, and the GaN film 13 is epitaxially grown on the sapphire substrate 12 by crystallinity. It becomes possible to make it.

Although not particularly described in the first embodiment, an electrical apparatus such as a lighting device using the semiconductor light emitting element of the first embodiment as a light source will be briefly described below.
(Embodiment 2)
FIG. 5 is a diagram illustrating a lighting device using the semiconductor light emitting element of Embodiment 1 as a light source as Embodiment 2 of the present invention, and shows a structure of a lamp in which the semiconductor light emitting element is packaged with a mold resin. .

  The lamp 10a includes frame members F1 and F2 that also serve as a pair of electrodes. On the one frame member F1, the semiconductor light emitting device 10 of the first embodiment described above is fixed, and the semiconductor light emitting device 10 The upper electrode 18b is connected to the one frame member F1 by a bonding wire W1, and the lower electrode 18a of the semiconductor light emitting element 10 is connected to the other frame member F2 by a bonding wire W2. The frame member and the entire semiconductor light emitting element 10 are covered with a resin Rm to form a mold package.

  As mentioned above, although this invention has been illustrated using preferable embodiment of this invention, this invention should not be limited and limited to this embodiment. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments of the present invention. It is understood that the patent documents cited in the present specification should be incorporated by reference into the present specification in the same manner as the content itself is specifically described in the present specification.

  The present invention relates to a technique for epitaxially growing a group III-V semiconductor crystal having good crystallinity on an insulating substrate, particularly in the fields of semiconductor light emitting devices, semiconductor layer forming methods, semiconductor light emitting device manufacturing methods, and electrical equipment. Thus, by epitaxially growing a GaN film on an AlN film having a low impurity content, a III-V group compound semiconductor device such as an LED can be produced with a high yield.

10 Semiconductor light emitting device 10a Lamp 11 Sapphire substrate (insulating substrate)
12 AlN film 13 Non-doped GaN layer 14 n-type GaN layer 15 Multiple quantum well layer 15a GaN layer (barrier layer)
15b InGaN layer (well layer)
16 p-type GaN layer 17 Transparent film (ITO film)
18a Lower electrode 18b Upper electrode 100 Sputtering apparatus 100a Chamber 101 Wafer stage 101a Heater 102 Solid material (target)
103 Power supply 104a, 104b Gas supply port 105 Gas exhaust port F1, F2 Frame member Rm Mold resin W1, W2 Bonding wire

Claims (19)

A semiconductor light emitting device having a III-V compound semiconductor layer formed on an insulating substrate,
An AlN film formed as a buffer layer on the insulating substrate;
The AlN film is a semiconductor light emitting device formed so that the carbon concentration is 0.2 at% or less and the chlorine content is 0.01 at% or less. The semiconductor light emitting device according to claim 1,
The insulating substrate is a sapphire substrate;
The III-V compound semiconductor layer is a GaN layer. The semiconductor light emitting device according to claim 2,
The semiconductor light emitting device, wherein the GaN layer is a non-doped GaN layer. The semiconductor light-emitting device according to claim 3.
A laminated structure formed on the non-doped GaN layer, wherein a second conductivity type GaN layer is laminated on the first conductivity type GaN layer so that a multiple quantum well layer serving as a light emitting region is located between the two GaN layers. A semiconductor light emitting device comprising: The semiconductor light emitting device according to claim 4,
The multiple quantum well layer is a semiconductor light emitting device having a structure in which a GaN layer as a barrier layer and an InGaN layer as a well layer are alternately stacked. The semiconductor light emitting device according to claim 5, wherein
A semiconductor light emitting device, wherein a transparent film having conductivity is formed on the entire surface of the second conductivity type GaN layer. The semiconductor light emitting device according to claim 6,
The transparent film is a semiconductor light emitting element, which is an ITO film made of indium tin oxide. The semiconductor light emitting device according to claim 7,
An upper electrode is disposed on the ITO film,
A semiconductor light emitting device, wherein a lower electrode is formed on an exposed portion of the first conductivity type GaN layer from which the ITO film, the second conductivity type GaN layer, and the multiple quantum well layer are removed. The semiconductor light emitting device according to claim 8,
The upper electrode and the lower electrode have a stacked structure in which an Au layer is formed on a Cr layer, a stacked structure in which an Au layer is stacked on a Ni layer, or an Au layer formed on a Ni layer via a Pt layer. A semiconductor light emitting device having a laminated structure formed. A method for forming a semiconductor layer for forming a group III-V semiconductor layer on an insulating substrate, comprising:
Forming an AlN film on the insulating film substrate;
Forming a group III-V semiconductor layer on the AlN film,
The step of forming the AlN film includes
Performing a heat treatment on the insulating substrate in a high vacuum state so that impurity components contained on the surface of the insulating substrate are evaporated; and
Depositing AlN, which is a material of the AlN film, on the insulating substrate subjected to the heat treatment. In the formation method of the semiconductor layer according to claim 10,
The insulating substrate is a sapphire substrate;
The method for forming a semiconductor layer, wherein the III-V semiconductor layer is a GaN layer. In the formation method of the semiconductor layer according to claim 11,
The method for forming a semiconductor layer, wherein the high vacuum state in the heat treatment is a vacuum state of 2E-5 Pa or less. The method of forming a semiconductor layer according to claim 12,
The method for forming a semiconductor layer, wherein the high vacuum state in the heat treatment is a vacuum state of 1.5E-5 Pa or less. The method of forming a semiconductor layer according to claim 12,
The method for forming a semiconductor layer, wherein the heat treatment for the insulating substrate is performed at 470 ° C. A method of manufacturing a semiconductor light emitting device using a III-V compound semiconductor,
Forming a group III-V compound semiconductor layer on an insulating substrate;
Forming a device structure constituting the semiconductor light emitting device on the III-V compound semiconductor layer,
The step of forming the III-V compound semiconductor layer includes:
Performing a heat treatment on the insulating substrate in a high vacuum state so that impurity components contained on the surface of the insulating substrate are evaporated; and
Depositing AlN as the material of the AlN film on the heat-treated insulating substrate;
Forming a group III-V compound semiconductor layer on the AlN film. In the manufacturing method of the semiconductor light-emitting device according to claim 15,
A method for manufacturing a semiconductor light emitting device, wherein the high vacuum state during the heat treatment on the insulating substrate is a vacuum state of 3E-5 Pa or less. In the manufacturing method of the semiconductor light emitting element according to claim 16,
The step of forming the element structure includes:
A first conductivity type III-V group semiconductor layer, a multiple quantum well layer, and a second conductivity type III-V group semiconductor layer are sequentially stacked on the III-V group compound semiconductor layer, and the multiple quantum well layer is formed. Forming a semiconductor multilayer structure as a light emitting region;
Forming a conductive transparent film on the second conductivity type III-V group semiconductor layer;
Forming an upper electrode on the conductive transparent film;
Forming a lower electrode on the first conductive type III-V semiconductor layer exposed by selectively removing the transparent film, the second conductive type III-V semiconductor layer, and the multiple quantum well layer The manufacturing method of a semiconductor light-emitting device containing these. In the manufacturing method of the semiconductor light-emitting device according to claim 17,
The first conductivity type III-V group semiconductor layer is an n-type GaN layer,
The second conductivity type III-V group semiconductor layer is a p-type GaN layer,
The multiple quantum well layer is formed by alternately laminating a GaN layer as a barrier layer and an InGaN layer as a well layer,
The upper electrode and the lower electrode have a stacked structure in which an Au layer is formed on a Cr layer, a stacked structure in which an Au layer is stacked on a Ni layer, or an Au layer formed on a Ni layer via a Pt layer. A method for manufacturing a semiconductor light-emitting element having a laminated structure formed. An electrical device with a light source,
10. The electrical device including the semiconductor light emitting element according to claim 1.

Images