JP2012134310A - Defect inspection method, defect inspection device, and defect inspection system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To properly convert coordinates of a defect detected on a wafer.SOLUTION: In the defect inspection method, a surface image on a wafer end part is acquired (Step S1), and a defect on the wafer end part is detected based on the coordinates from a first origin which is specified for the wafer, using the acquired surface image (Step S2). Furthermore, one of a plurality of scribe lines on the wafer is detected using the acquired surface image (Step S3). And, the coordinates from the first origin of the defect on the wafer end part are converted to the coordinates from a second origin specified for the plurality of scribe lines on the wafer, based on the detected scribe line (Step S4).

Description

  The present invention relates to a defect inspection method, a defect inspection apparatus, and a defect inspection system including the defect inspection apparatus.

  In the field of manufacturing electronic devices using a wafer such as a semiconductor device, inspection of defects such as foreign matter existing on the surface of the wafer is performed. For the defect inspection, for example, a surface defect inspection apparatus that irradiates the surface of the wafer with laser light and acquires information such as the position (coordinates) and size of the defect from the scattered light is used. Further, an SEM review apparatus that acquires an SEM (Scanning Electron Microscope) image of the defect based on the coordinates of the defect acquired by the surface defect inspection apparatus is also used. In addition, an edge inspection apparatus for inspecting a defect on an end portion (edge portion) of the wafer surface is also used.

  In the case of using a manufacturing apparatus or an inspection apparatus that handles wafers, wafer alignment is performed between different apparatuses. For example, a technique for aligning a wafer by using information such as marks provided on the wafer, the position of the notch or orientation flat (orientation flat) of the wafer, the edge position of the wafer, the arrangement of the scribe line, etc. is known. Yes.

JP 2001-176951 A JP 2008-298696A JP 2004-186306 A JP-A-4-213852 JP-A 63-168708

  By the way, among the defect inspection apparatuses as described above, the surface defect inspection apparatus and the SEM review apparatus, for example, set the position of the defect detected on the wafer surface to the origin set based on the scribe line (the intersection of the scribe lines). Recognize by coordinates from the origin set in the area. In that case, the SEM image of the defect detected by the surface defect inspection apparatus can be acquired with relatively high accuracy by the SEM review apparatus.

  On the other hand, the edge inspection apparatus does not consider the arrangement of scribe lines. For example, the position of a defect detected at the edge of a wafer is determined from the origin (wafer center part, etc.) set on the wafer without using the scribe line. Recognize by the coordinates. In that case, when the SEM image of the defect detected by the edge inspection apparatus is acquired by the SEM review apparatus, the coordinates indicating the position of the defect are shifted between both apparatuses, and the SEM image of the defect is acquired with high accuracy. May not be possible.

  According to one aspect of the present invention, a step of acquiring a surface image of a wafer including a plurality of scribe lines, and using the acquired surface image, a defect of the wafer is set in the wafer. Based on the step of detecting by coordinates from the origin, the step of detecting one scribe line of the plurality of scribe lines using the acquired surface image, and the one scribe line detected, And a step of converting the coordinates of the defect from the first origin to coordinates from the second origin set in the plurality of scribe lines.

  According to the disclosed method, the coordinates of the defect detected on the wafer can be appropriately converted, and as a result, the accuracy of defect inspection can be improved.

It is a figure which shows an example of a defect inspection method. It is a figure which shows the structural example of a defect inspection apparatus. It is a figure which shows the structural example of a defect inspection system. It is a figure which shows an example of a defect inspection flow. It is a figure which shows an example of a defect inspection apparatus. It is a figure which shows an example of a conveyance part. It is explanatory drawing (the 1) of a defect detection process. It is explanatory drawing (the 2) of a defect detection process. It is explanatory drawing (the 3) of a defect detection process. It is explanatory drawing of a surface image extraction process. It is explanatory drawing of a binarized image generation process. It is explanatory drawing (the 1) of a scribe line detection process. It is explanatory drawing (the 2) of a scribe line detection process. It is explanatory drawing (the 1) of an edge line detection process. It is explanatory drawing (the 2) of an edge line detection process. It is explanatory drawing of an intersection pattern acquisition process. It is explanatory drawing of a virtual layout production | generation process. It is explanatory drawing (the 1) of a coordinate transformation process. It is explanatory drawing (the 2) of a coordinate transformation process. It is explanatory drawing (the 3) of a coordinate transformation process. It is explanatory drawing (the 4) of a coordinate transformation process. It is a figure (the 1) which shows an example of a defect inspection system. It is FIG. (2) which shows an example of a defect inspection system. It is a figure which shows one structural example of the hardware contained in a defect inspection apparatus.

FIG. 1 is a diagram illustrating an example of a defect inspection method, and FIG. 2 is a diagram illustrating a configuration example of a defect inspection apparatus.
The defect inspection as shown in FIG. 1 can be performed using, for example, a defect inspection apparatus 10 as shown in FIG.

The defect inspection apparatus 10 illustrated in FIG. 2 includes an acquisition unit 11, a first detection unit 12, a second detection unit 13, a conversion unit 14, a storage unit 15, and a stage 16.
The acquisition unit 11 acquires a surface image of the end portion of the wafer 100 placed on the stage 16. The wafer 100 is placed on the stage 16 by performing alignment such as notch alignment. In the defect inspection apparatus 10, the offset between the center of the wafer 100 and the origin of the stage 16 is determined when the wafer 100 is aligned and set on the stage 16.

  The wafer 100 includes a plurality of scribe lines 101 extending vertically and horizontally that define individual semiconductor element (chip) regions formed or formed on the wafer 100. The scribe line 101 is a line that defines a range of shots (exposure shots) when a plurality of chip areas are exposed together using photolithography technology or when one chip area is exposed. But there is. The end portion of the scribe line 101 is imaged on the surface image of the end portion of the wafer 100 acquired by the acquiring unit 11.

  The first detection unit 12 detects defects present at the edge of the wafer 100 using the surface image acquired by the acquisition unit 11. The first detection unit 12 is a coordinate from the first origin (the origin of the stage 16 (the central part of the wafer 100, etc.)) set in advance on the wafer 100 on the stage 16 in the defect inspection apparatus 10, and the end of the wafer 100. Detect defects in parts.

  The second detection unit 13 uses the surface image acquired by the acquisition unit 11 and detects the scribe line 101 on the wafer 100 included in the surface image. The second detection unit detects at least one scribe line 101 among the plurality of scribe lines 101 on the wafer 100.

  The converter 14 converts the coordinates of the defect detected by the first detector 12 from the first origin to coordinates from another second origin set based on the scribe line 101. For example, the conversion unit 14 obtains the layout of the plurality of scribe lines 101 on the wafer 100 based on the scribe lines 101 detected by the second detection unit 13. Then, the conversion unit 14 converts the coordinates of the defects detected by the first detection unit 12 from the first origin into predetermined locations (intersections of the scribe lines 101 (corner portions of the shots) of the plurality of scribe lines 101 obtained from the layout. ) Etc.) is converted into coordinates from the second origin.

  The storage unit 15 stores in advance information such as the size and layout of shots applied at the time of exposure on the wafer 100, the width of the scribe line 101, and the intersection pattern between the scribe line and the end (edge line) of the wafer 100. . The storage unit 15 stores the surface image acquired by the acquisition unit 11, the coordinates of the defect detected by the first detection unit 12, information about the scribe line 101 detected by the second detection unit 13, and the conversion unit 14. The converted coordinates are also stored.

  In the defect inspection using such a defect inspection apparatus 10, the defect inspection apparatus 10 first acquires the surface image of the edge part of the wafer 100 by the acquisition part 11 as shown in FIG. 1 (step S1). For example, the defect inspection apparatus 10 acquires a surface image of one end of the wafer 100 by the acquisition unit 11 by rotating the stage 16 on which the aligned wafer 100 is placed. To do. In the acquisition unit 11, for example, a surface image of an end of about several mm is acquired from the end (outer peripheral edge, edge line) of the wafer 100 toward the center thereof.

  Next, the defect inspection apparatus 10 uses the surface image acquired by the acquisition unit 11 to detect a defect at the edge of the wafer 100 by the first detection unit 12 (step S2). At this time, the defect at the end of the wafer 100 is detected by the coordinates from the origin of the stage 16 (the center of the wafer 100), which is set in advance as the first origin by the defect inspection apparatus 10.

  Further, the defect inspection apparatus 10 uses the surface image acquired by the acquisition unit 11 to detect at least one scribe line 101 on the wafer 100 included in the surface image by the second detection unit 13 (step S3). ). In the surface image of the end of the wafer 100 acquired by the acquisition unit 11, the end of the scribe line 101 is imaged. In step S <b> 3, the end of at least one scribe line 101 existing in the surface image of the end of the wafer 100 is detected.

  In addition, in said step S1, when the surface image of the edge part for one round of the wafer 100 is acquired by the acquisition part 11, in step S3, some surface images are used among the surface images, A scribe line 101 existing in the partial surface image is detected.

  Further, when detecting the scribe line 101 from the surface image of the end portion of the wafer 100, for example, the scribe line 101 including the second origin set at the corner of the shot or the like (that is, the shot is defined). Scribe line 101) is detected. In that case, as a surface image used for detection of the scribe line 101, a surface image on which the scribe line 101 including such a second origin exists is used.

  After detecting the defect at the end of the wafer 100 and the scribe line 101 as described above, the defect inspection apparatus 10 uses the conversion unit 14 to determine the coordinates of the defect detected at the end of the wafer 100 from the first origin. Is converted into coordinates from the second origin (step S4). The second origin is set at a position on the scribe line 101 that demarcates the shot, such as a corner of the shot (intersection of the scribe line 101). Based on the detected scribe line 101, the conversion unit 14 converts the coordinates from the first origin of the defect into coordinates from the second origin set at a predetermined location of the scribe line 101, such as a corner of the shot.

  For example, the conversion unit 14 identifies the position on the wafer 100 of the scribe line 101 detected from the surface image of the edge of the wafer 100, and based on the position, the plurality of scribe lines 101 (all of the scribe lines 101 on the wafer 100 are all). (Or a part of the layout). Then, the conversion unit 14 converts the coordinates of the defect from the first origin to the coordinates from the second origin set at a predetermined position of the scribe line 101 where the layout on the wafer 100 such as the corner of the shot is obtained. Convert.

  More specifically, the conversion unit 14 generates a virtual shot layout (the layout of the scribe line 101) for the entire wafer 100 based on the detected scribe line 101. At this time, the conversion unit 14 uses the information stored in the storage unit 15 such as the shot size and layout, the width of the scribe line, and the intersection pattern with the edge line of the wafer 100 to detect the position of the scribe line 101. And generate a virtual layout. Then, the conversion unit 14 sets the coordinates from the first origin for the defect existing at the edge of the wafer 100 in the region corresponding to a certain shot of the virtual layout to the corner of the shot or the like. 2 Convert to coordinates from the origin.

  The defect inspection apparatus 10 that performs the coordinate conversion of defects as described above can be applied to a defect inspection system that detects and observes defects by combining with a SEM review apparatus (defect inspection apparatus).

FIG. 3 is a diagram illustrating a configuration example of the defect inspection system.
The defect inspection system 1 includes the defect inspection apparatus 10 and the SEM review apparatus 20 as described above. The SEM review apparatus 20 includes an acquisition unit 21 that acquires an SEM image of the surface of the wafer 100 and a stage 22 on which the wafer 100 is placed.

  In the defect inspection system 1, the defect inspection apparatus 10 performs coordinate conversion of the defects existing at the edge of the wafer 100 as described above, and then uses the converted coordinates to detect defects by the SEM review apparatus 20. Observations are made. In the SEM review apparatus 20, the stage 22 on which the wafer 100 is placed moves on the horizontal plane based on the defect coordinates converted by the conversion unit 14 of the defect inspection apparatus 10 and stored in the storage unit 15. The defect is introduced into the field of view. For example, the SEM review device 20 moves the stage 22 based on the coordinates from the origin set at the corner of the shot, and observes the target defect.

  In addition to the defect inspection apparatus 10 as described above, as an inspection apparatus that can be combined with the SEM review apparatus 20, there is a surface defect inspection apparatus that detects a defect in a region inside the edge of the wafer 100. In the surface defect inspection apparatus, the detected defect is recognized by coordinates from the origin set at the corner of the shot, for example, as in the SEM review apparatus 20. In the SEM review apparatus 20, the stage 22 on which the wafer 100 is placed is moved based on the defect coordinates output from such a surface defect inspection apparatus, and the target defect is observed.

  In both the surface defect apparatus and the SEM review apparatus 20, the wafer 100 is aligned, and the shot size and the shot layout applied at the time of exposure to the wafer 100 are recognized. Then, in the surface defect inspection apparatus, the defect is detected with the coordinates from the origin set at the corner of the shot, and the SEM review apparatus 20 has the defect based on the coordinates from the origin set at the corner of the shot. Observations are made. Therefore, the SEM image of the defect detected by the surface defect inspection apparatus can be automatically acquired with high accuracy by the SEM review apparatus 20.

  On the other hand, in the defect inspection apparatus 10 described above, a defect at the end of the wafer 100 is first detected by coordinates from the first origin (the origin of the stage 16 (the center of the wafer 100)) that is not a corner of the shot. When the target defect is observed with the SEM review apparatus 20 using such coordinates, the coordinates indicating the position of the defect are shifted between the defect inspection apparatus 10 and the SEM review apparatus 20, and the target defect is in the field of view of the SEM. In some cases, the defect cannot be automatically observed.

  On the other hand, in the defect inspection apparatus 10 described above, the layout of the scribe line 101 on the wafer 100 is obtained based on the scribe line 101 detected from the surface image of the end portion of the wafer 100. Using such a layout, the coordinates of the defect detected at the edge of the wafer 100 are converted into coordinates from the origin set at the corner of the shot, for example, as in the SEM review apparatus 20. The defect inspection apparatus 10 outputs the converted coordinates to the SEM review apparatus 20 as the coordinates of the defects detected at the edge of the wafer 100.

  That is, the defect inspection apparatus 10 outputs, as the defect coordinates, coordinates from the origin (second origin) set at the corner of the shot to the SEM review apparatus 20 as in the case of the surface defect inspection apparatus. be able to. Thereby, it is possible to suppress the defect coordinates from being shifted between the defect inspection apparatus 10 and the SEM review apparatus 20, and to automatically acquire the SEM image of the target defect with high accuracy.

  In the above description, after acquiring the surface image of the edge of the wafer 100 in step S1, the surface image is used to detect defects in the edge of the wafer 100 in step S2, and at least one is detected in step S3. The scribe line 101 is detected. Steps S2 and S3 may be switched in order.

  Moreover, the processing function which the defect inspection apparatus 10 and the SEM review apparatus 20 have is realizable using a computer. The defect inspection apparatus 10 and the SEM review apparatus 20 realize the processing functions by executing a program describing the processing functions of the defect inspection apparatus 10 and the SEM review apparatus 20 on a computer.

Hereinafter, an example of defect inspection will be described in more detail.
FIG. 4 shows an example of a defect inspection flow, and FIG. 5 shows an example of a defect inspection apparatus. Moreover, FIGS. 6-23 is explanatory drawing of each process of a defect inspection. Hereinafter, defect inspection will be described with reference to FIGS.

First, the defect inspection apparatus 30 shown in FIG. 5 will be described.
A defect inspection apparatus 30 illustrated in FIG. 5 includes a stage 31 on which the wafer 100 is placed, a rotation mechanism unit 32 that rotates the stage 31, and a drive control unit 33 that controls driving of the rotation mechanism unit 32. The wafer 100 is transferred onto the stage 31 by the transfer unit 34.

  As shown in FIG. 6, the transport unit 34 includes at least one port 34a, a handler 34b, and an alignment mechanism unit 34c. Here, a FOUP (Front Opening Unified Pod) accommodating one or a plurality of wafers 100 is set in the port 34a. The handler 34b takes out the wafers 100 one by one from the FOUP set in the port 34a, conveys the wafers 100 to the alignment mechanism 34c, as shown by the thick arrows in FIG. Is conveyed to the stage 31. The alignment mechanism 34c aligns the notch, orientation flat, alignment mark, and the like of the wafer 100 before the wafer 100 taken out of the FOUP by the handler 34b is transferred to the stage 31.

  The stage 31 on which the wafer 100 is placed in this manner is rotated by the rotation mechanism unit 32 controlled by the drive control unit 33. The rotation conditions of the stage 31 are set in advance as a recipe and stored in a storage unit 35 such as a hard disk drive (HDD) included in the defect inspection apparatus 30. The drive control unit 33 controls the rotation mechanism unit 32 based on the recipe stored in the storage unit 35 to rotate the stage 31.

  The image acquisition unit 36 of the defect inspection apparatus 30 acquires a surface image of the end portion of the wafer 100 placed on the stage 31. The image acquisition unit 36 acquires a surface image by, for example, irradiating laser light and detecting the scattered light. In addition, as the image acquisition unit 36, a device that acquires a surface image by an image sensor such as a CCD (Charge Coupled Device) can also be used. In the image acquisition unit 36, the surface image of the end along the outer periphery of the wafer 100 is continuously acquired by rotating the stage 31. The surface image acquired by the image acquisition unit 36 is stored in the storage unit 35. Moreover, the surface image memorize | stored in the memory | storage part 35 can be displayed on the display part 37 using a monitor etc. now.

The defect inspection apparatus 30 further includes a defect detection unit 38, a scribe line detection unit 39, and an edge line detection unit 40.
The defect detection unit 38 detects a defect present at the edge of the wafer 100 using the surface image acquired by the image acquisition unit 36 and stored in the storage unit 35. The defect detection using such a surface image can be performed using, for example, an ADC (Auto Defect Classification) function provided in the defect detection unit 38. The defect detection conditions using the surface image (determination conditions for determining whether or not a different part in the surface image is a defect) is set in advance as a recipe and stored in the storage unit 35. The defect detection unit 38 uses the coordinates from the first origin set for the wafer 100 on the stage 31, here the coordinates from the origin of the stage 31 (the central part of the wafer 100), to determine the end of the wafer 100. Detect defects.

  The scribe line detection unit 39 detects a scribe line included in the surface image acquired by the image acquisition unit 36 and stored in the storage unit 35 among the scribe lines 101 on the wafer 100. The scribe line detection unit 39 is, for example, a surface on which a predetermined scribe line (for example, a scribe line including a second origin set at a corner of a shot) is present in the surface image of the edge of the wafer 100. An extraction unit for extracting an image is included. In addition, the scribe line detection unit 39 includes, for example, an image processing unit that performs image processing for detecting a scribe line from the surface image extracted by the extraction unit.

  The edge line detection unit 40 detects the edge (edge line) of the wafer 100 included in the surface image acquired by the image acquisition unit 36 and stored in the storage unit 35. The edge line detection unit 40 includes, for example, an image processing unit that performs image processing for detecting the edge line of the wafer 100 from the surface image.

The defect inspection apparatus 30 further includes a pattern acquisition unit 41, a pattern comparison unit 42, a virtual layout generation unit 43, a coordinate conversion unit 44, and a coordinate output unit 45.
The pattern acquisition unit 41 acquires, by image processing, a substantially T-shaped intersection pattern in which the scribe line detected by the scribe line detection unit 39 and the edge line of the wafer 100 detected by the edge line detection unit 40 intersect. To do. The pattern acquisition unit 41 may obtain an intersection angle between the scribe line and the edge line as an intersection pattern between the detected scribe line and the edge line of the wafer 100.

  The storage unit 35 stores in advance, for comparison, an intersecting pattern of scribe lines (all or a part) formed on the wafer 100 and edge lines of the wafer 100. The pattern comparison unit 42 compares the intersection pattern acquired by the pattern acquisition unit 41 with the comparison intersection pattern stored in the storage unit 35. The scribe line included in the cross pattern acquired by the pattern acquisition unit 41 by the pattern comparison unit 42 is the scribe line on the wafer 100, that is, the position of the scribe line included in the cross pattern on the wafer 100. Identified.

  In addition, the storage unit 35 stores in advance the shot size, shot layout, offset between the center of the wafer 100 and the center of the shot layout, the width of the scribe line, and the like that are applied when the wafer 100 is exposed. Further, the storage unit 35 stores in advance the position of the second origin set at the corner of the shot. The virtual layout generation unit 43 uses the shot size, shot layout, and scribe line width stored in the storage unit 35 on the basis of the scribe line of the intersecting pattern whose position on the wafer 100 is specified as a shot. Generate a virtual layout.

  The coordinate conversion unit 44 sets the coordinates from the first origin of the defect detected by the defect detection unit 38 based on the virtual layout of the shot generated by the virtual layout generation unit 43 to the corner of the shot. 2 Convert to coordinates from the origin. At that time, the coordinate conversion unit 44 uses the coordinates from the first origin of each defect detected at the edge of the wafer 100 as the coordinates from the second origin set at the corner of one shot including the defect. Convert to The coordinates converted by the coordinate conversion unit 44 are stored in the storage unit 35.

The coordinate output unit 45 outputs the converted coordinates stored in the storage unit 35 in this manner to another defect inspection apparatus such as an SEM review apparatus.
From the input unit 46 of the defect inspection apparatus 30, before the defect inspection, the rotation condition of the stage 31, the defect detection condition using the surface image, the cross pattern for comparison, the shot size, the shot layout, the scribe line width, and the shot corner part Information such as the position of the second origin is input. Information input from the input unit 46 is stored in the storage unit 35 and used as appropriate in the defect inspection process.

Next, an example of defect inspection using the defect inspection apparatus 30 having the above configuration will be described in order according to the flow shown in FIG.
In the defect inspection apparatus 30, a recipe used for defect inspection is first loaded (read) (step S10). One or more recipes are stored in the storage unit 35 in advance before defect inspection. The recipe includes, for example, the rotation conditions (rotation angle, rotation speed, etc.) of the stage 31 and the defect detection conditions (reflectance threshold value for determining whether or not a portion having a different reflectance in the surface image is a defect). Remember. For example, the defect inspection apparatus 30 starts loading a predetermined recipe stored in the storage unit 35 based on a command from the input unit 46 by the operator.

  Next, the defect inspection apparatus 30 aligns the wafer 100 to be inspected by the transport unit 34 and sets the wafer 100 on the stage 31 (step S11). Then, according to the loaded recipe, the defect inspection apparatus 30 controls the rotation mechanism unit 32 with the drive control unit 33 to rotate the stage 31 and acquires the surface image of the end portion of the wafer 100 with the image acquisition unit 36 (step). S12). The surface image acquired by the image acquisition unit 36 is stored in the storage unit 35.

  When the wafer 100 is aligned and set on the stage 31 in step S11, an offset between the center of the wafer 100 and the origin of the stage 31 can be determined. Alternatively, the offset between the center of the wafer 100 and the origin of the stage 31 can be determined using the surface image after obtaining the surface image of the edge of the wafer 100 in step S12.

After acquiring the surface image of the edge part of the wafer 100, the defect inspection apparatus 30 uses the acquired surface image to detect a defect with the defect detection unit 38 (step S13).
7 to 9 are explanatory diagrams of the defect detection process. 7 is a diagram showing an example of the surface image, FIG. 8 is a diagram showing an example of the reflectance in the surface image, and FIG. 9 is a diagram showing an example of defect detection.

  For example, when the image acquisition unit 36 irradiates the end of the wafer 100 with laser light and detects the scattered light, the surface image 120 acquired by the image acquisition unit 36 is obtained as shown in FIG. Shows a portion 121 having a different contrast due to a difference in reflectance. FIG. 8 illustrates the reflectance waveform 122 in a certain region in the surface image acquired by the image acquisition unit 36.

  The defect detection unit 38 uses such a surface image 120 acquired by the image acquisition unit 36 and determines whether or not the different contrast portion 121 on the wafer 100 is defective. For example, as shown in FIG. 9, the defect detection unit 38 has a reflectance of a predetermined range including the part 121 a (shown by a dotted line 121 c in FIG. 9A) for a certain part 121 a in the surface image 120. The waveform 121b is extracted (FIG. 9B). And the defect detection part 38 determines the said part 121a to be a defect, when the reflectance waveform 121b of the said part 121a shows the reflectance which exceeds the preset threshold value. The reflectance threshold value is set in advance before defect inspection and stored in the storage unit 35. The defect detection unit 38 uses the threshold value stored in the storage unit 35 and determines whether or not the portion 121a is defective depending on whether or not the reflectance waveform 121b exhibits a reflectance exceeding the set threshold value. .

  For example, in the example of FIG. 9B, when the set threshold value is the dotted line T1, the reflectance (peak) of the reflectance waveform 121b exceeds the dotted line T1, so the defect detection unit 38 The portion 121a of the reflectance waveform 121b is determined as a defect. Further, when the set threshold value is the dotted line T2, the reflectance (peak) of the reflectance waveform 121b is lower than the dotted line T2, so the defect detection unit 38 uses the portion 121a of the reflectance waveform 121b. Judge that it is not a defect.

  By executing such a determination process, the defect detection unit 38 determines whether or not each of the different contrast portions 121 in the surface image 120 is a defect, and if it is determined to be a defect, the position is determined. It memorize | stores in the memory | storage part 35 as a defect coordinate. At that time, the defect detection unit 38 sets the position of the portion 121 determined as a defect to the coordinates from the first origin set with respect to the wafer 100 on the stage 31, here the origin of the stage 31 (the center of the wafer 100). Part)).

  Here, the case where the image acquisition unit 36 irradiates the end of the wafer 100 with laser light and detects the scattered light has been described as an example. In addition, when the image acquisition unit 36 acquires a surface image by an image sensor such as a CCD, for example, a threshold is set for the contrast of the surface image 120 and stored in the storage unit 35. Then, using the threshold value, it is determined whether or not each of the different contrast portions 121 in the surface image 120 is a defect, and the coordinates (coordinates from the first origin) of those determined as defects are stored in the storage unit 35. You just have to do it.

  After detecting the defect at the edge of the wafer 100 as described above, the defect inspection apparatus 30 uses the surface image acquired in step S12, and the scribe line detection unit 39 uses the surface image of the scribe line 101 on the wafer 100. A predetermined scribe line is detected. For example, the scribe line detection unit 39 detects a scribe line including the second origin set at the corner of the shot.

  In detecting the scribe line, the scribe line detection unit 39 is first expected from the surface image acquired by the image acquisition unit 36 and stored in the storage unit 35 to include a scribe line including the second origin. A surface image of the region is extracted (step S14).

  When extracting the surface image, information such as a shot size, a shot layout, a scribe line width, an offset (map offset) of the shot layout center, and a scribe line position including the second origin in the shot layout is used. These pieces of information are stored in the storage unit 35 in advance.

FIG. 10 is an explanatory diagram of the surface image extraction step.
The scribe line detection unit 39 sets the shot layout 130 on the wafer 100 using, for example, the shot size, shot layout, scribe line width, and map offset information stored in the storage unit 35.

  The shot layout 130 is set on the wafer 100 in order to extract the surface image, and does not necessarily match the layout of the scribe line that actually exists on the wafer 100 and demarcates the shot. . Here, it is assumed that the map offset is 0 μm in both the x direction and the y direction, that is, the offset between the origin of the stage 31 (the central portion of the wafer 100) and the shot layout center is 0 μm.

  After setting the shot layout 130 for the wafer 100, the scribe line detection unit 39 selects one scribe line including the second origin from the plurality of scribe lines 131 of the shot layout 130 based on the information stored in the storage unit 35. 131a is selected. Then, the scribe line detection unit 39 calculates θ = ∠ACB from ΔABC including a part of the selected scribe line 131a (line segment AB) and the center (point C) of the shot layout 130. For example, if the point C is the center of the wafer 100, the origin (0, 0) of the stage 31, the radius CA of the wafer 100 is 150000 μm, and the size CB of one side of one shot is 22660 μm, θ is expressed by the following equation (1): , (2), about 81.3 ° can be obtained.

cos θ = CB / CA
= 22660 / 150,000 = 0.151066666 (1)
cos ⁻¹ 0.151066666 = 81.31125535 (2)
The scribe line detection unit 39 uses the angle of about 81.3 ° obtained in this way, and corresponds to about 81.3 ° in the surface image acquired by the image acquisition unit 36 and stored in the storage unit 35. The surface image of the edge part (A part) of the wafer 100 to be extracted is extracted. By such processing, a surface image of the edge portion of the wafer 100 where a scribe line including the second origin is expected to be present in the calculation using the shot layout 130 is extracted.

  Here, the case where the map offset is 0 μm is taken as an example. However, when the map offset is not 0 μm, the surface image of the end portion of the wafer 100 in the region in consideration of the offset may be extracted.

  Since the positional relationship between the stage 31 and the wafer 100 set thereon is known by alignment, the extracted surface image is the image of the end of which area of the wafer 100 and which coordinate area on the stage 31 is You can see if it is.

  Next, the scribe line detection unit 39 performs binarization processing on the extracted surface image based on the reflectance or contrast, and generates a binarized image (step S15).

FIG. 11 is an explanatory diagram of the binarized image generation process.
The scribe line detection unit 39 generates a binarized image 140 as shown in FIG. 11 from the extracted surface image. The generated binarized image 140 includes scribe lines 141 (two as an example here) on the wafer 100, edge lines 142 of the wafer 100, and chip patterns 145 formed on the wafer 100.

  The defect inspection apparatus 30 detects the scribe line 141 and the edge line 142 from the binarized image 140 obtained by binarizing the surface image extracted by the scribe line detection unit 39 as described above. Note that the process of detecting the scribe line 141 and the edge line 142 is performed in order to determine which scribe line 141 in the binarized image 140 corresponds to the scribe line including the second origin.

First, the defect inspection apparatus 30 detects the scribe line 141 from the binarized image 140 by the scribe line detection unit 39 (step S16).
12 and 13 are explanatory diagrams of the scribe line detection step.

  When detecting the scribe line 141, the scribe line detection unit 39 first reflects in the second direction D2 intersecting the first direction D1 toward the outer periphery of the wafer 100 in the binarized image 140 as shown in FIG. A rate waveform 150 is acquired. That is, the reflectance waveform 150 in the direction D2 across the scribe line 141 protruding from the pattern 145 in the direction of the edge line 142 is acquired. The scribe line detection unit 39 acquires a plurality of such reflectance waveforms 150 in the second direction D2 by shifting the position in the first direction D1. A plurality of reflectance waveforms 150 acquired in this way are arranged as shown in FIG. Here, as an example, three reflectance waveforms 150, that is, three reflectance waveforms 150 having different positions in the first direction D1 are shown side by side.

  In FIG. 13, the waveform portion 151 in the range indicated by the arrow of each reflectance waveform 150 corresponds to the scribe line 141, and the circled portion corresponds to the edge of the scribe line 141. In the scribe line detection unit 39, such a waveform portion 151 is continuously arranged in the first direction D1 as shown in FIG. 13 from a plurality of reflectance waveforms 150, and further stored in the storage unit 35 in advance. It is determined whether the width corresponds to the width of the scribe line 141. When these conditions are satisfied, the scribe line detection unit 39 detects, as the scribe line 141, a region in the binarized image 140 in which the waveform portions 151 having a certain width are arranged in the first direction D1 as in the example of FIG. To do.

  Here, it is known which binarized image 140 (extracted surface image) is an image of which region of the wafer 100 is in which coordinate region on the stage 31. The detected position of the scribe line 141 on the stage 31 can be expressed by coordinates from the origin of the stage 31 (the central portion of the wafer 100).

  The scribe line detection unit 39 can detect the scribe line 141 based on the contrast waveform as well as the scribe line 141 based on the contrast waveform 150 as shown here.

  After the scribe line 141 is detected by the scribe line detection unit 39, the defect inspection apparatus 30 detects the edge line 142 by the edge line detection unit 40 (step S17).

14 and 15 are explanatory diagrams of the edge line detection process.
First, as shown in FIG. 14, the edge line detection unit 40 has a fourth image that intersects the third direction D3 along the edge line 142 of the wafer 100 with respect to the binarized image 140 generated by the scribe line detection unit 39. A reflectance waveform 160 in the direction D4 is acquired. At that time, the reflectance waveform 160 in the direction D4 across the edge line 142 is acquired. The edge line detection unit 40 acquires a plurality of such reflectance waveforms 160 in the fourth direction D4 by shifting the position in the third direction D3. A plurality of reflectance waveforms 160 obtained in this way are arranged as shown in FIG. Here, as an example, three reflectance waveforms 160, that is, three reflectance waveforms 160 having different positions in the third direction D3 are shown side by side.

  In FIG. 15, a waveform portion 161 surrounded by a circle of each reflectance waveform 160 corresponds to the edge line 142. The edge line detection unit 40 determines from the plurality of reflectance waveforms 160 whether the waveform portions 161 surrounded by the circle are continuously and linearly arranged in the third direction D3 as shown in FIG. To do. When this condition is satisfied, the edge line detection unit 40 detects the lines in the binarized image 140 in which the waveform portions 161 are arranged in the third direction D3 as in the example of FIG. .

  Here, the binarized image 140 (extracted surface image 120) knows which coordinate region on the stage 31 is at the end of which region of the wafer 100. The detected position of the edge line 142 on the stage 31 can be represented by coordinates from the origin of the stage 31 (the central portion of the wafer 100).

  The edge line detection unit 40 can detect the edge line 142 based on the contrast waveform as well as the edge line 142 based on the contrast waveform 160 as shown here.

  After the edge line 142 is detected, the defect inspection apparatus 30 acquires the intersection pattern between the detected scribe line 141 and the edge line 142 by the pattern acquisition unit 41 (step S18).

FIG. 16 is an explanatory diagram of the intersection pattern acquisition step.
As shown in FIG. 16A, the pattern acquisition unit 41 generates a binary image 140a that includes the scribe line 141 detected in step S16 and the edge line 142 detected in step S17. Then, the pattern acquisition unit 41 performs image processing for extending any one scribe line 141 toward the edge line 142 as indicated by a dotted line in FIG. Thereby, an intersection pattern 143 of the scribe line 141 and the edge line 142 as shown in FIG. Note that the pattern acquisition unit 41 may further acquire an intersection angle 143a between the scribe line 141 and the edge line 142 as shown in FIG.

  After acquiring the intersection pattern 143, the defect inspection apparatus 30 uses the pattern comparison unit 42 to compare the acquired intersection pattern 143 with the comparison intersection pattern stored in the storage unit 35 in advance (step S19). At that time, the acquired intersection pattern 143 is compared with the intersection pattern of the scribe line including the second origin in the shot layout and the edge line of the wafer 100 stored in the storage unit 35.

  When the cross pattern 143 matches a predetermined cross pattern for comparison stored in the storage unit 35 in advance, the pattern comparison unit 42 includes the second origin on the wafer 100 in the scribe line 141 of the cross pattern 143. It determines with it being a scribe line (step S20). The pattern comparison unit 42 selects another scribe line 141 in the binarized image 140a when the intersection pattern 143 does not match the predetermined comparison intersection pattern stored in the storage unit 35 in advance. (Step S21), Steps S18 to S20 are executed. By performing such processing, it is determined which scribe line 141 in the binarized image 140a corresponds to the scribe line including the second origin.

  For example, when a plurality of chip regions are exposed together, scribe lines that separate individual chips also exist between scribe lines that define shots. By acquiring the intersection pattern 143 as described above and performing comparison with the comparison intersection pattern, a scribe line including the second origin set at the corner of the shot can be accurately identified. .

  In this case, the intersection pattern 143 is obtained by performing image processing for extending the scribe line 141 toward the edge line 142, but such image processing is not necessarily performed. That is, a pattern in which the scribe line 141 and the edge line 142 are kept apart is used, a comparison pattern corresponding to such a pattern is stored in the storage unit 35, and the pattern comparison unit 42 stores both of them. You may make it compare.

  The defect inspection apparatus 30 repeats the processes of steps S14 to S22 for another part (step S22). For example, the defect inspection apparatus 30 selects the scribe lines 131b, 131c, and 131d as shown in FIG. 10, and executes the processes of steps S14 to S22 as described above.

  In the defect inspection apparatus 30, it is not always necessary to execute the processes of steps S14 to S22 for a plurality of places as described above, and the processes of steps S14 to S22 may be executed only for any one place. However, as the number of locations where the processes of steps S14 to S22 are executed increases, the correspondence accuracy between the scribe lines 141 in the binarized images 140 and 140a obtained for each location and the scribe lines in the shot layout is improved. be able to.

  Through the above processing, it can be partially understood which scribe line of which surface image corresponds to which scribe line on the shot layout among the surface images of the edge of the wafer 100 acquired by the image acquisition unit 36. It will be. The defect inspection apparatus 30 generates a virtual layout of shots, for example, for the entire wafer 100 by the virtual layout generation unit 43 based on such a correspondence relationship (step S23).

FIG. 17 is an explanatory diagram of the virtual layout generation process.
The virtual layout generation unit 43 generates a virtual layout 170, which is image data indicating the positional relationship between the wafer 100 and a plurality of scribe lines 171 formed on the wafer 100, as shown in FIG.

  When generating the virtual layout 170, the virtual layout generation unit 43 uses the scribe line 141 detected from the surface image (binarized images 140 and 140 a) whose correspondence with the scribe line on the shot layout is determined. Make it a standard. Then, using the shot layout, the shot size, and the scribe line width, shots are successively developed with a predetermined scribe line width with respect to the wafer 100 from the position of the reference scribe line 141 in the data. . As a result, a virtual layout 170 for the entire wafer 100 as shown in FIG. 17 is generated.

  After the generation of the virtual layout 170, the defect inspection apparatus 30 uses the coordinate conversion unit 44 to execute a process of converting the coordinates of the defect detected by the defect detection unit 38 using the virtual layout 170 (step S24).

18 to 21 are explanatory diagrams of the coordinate conversion process.
The coordinate conversion unit 44 obtains the coordinates on the stage 31 for the vertical and horizontal scribe lines 171 passing through the center in the virtual layout 170, and as shown in FIG. 18, the center line 171a of the vertical and horizontal scribe lines 171 is obtained. Find the position (coordinates) where. The coordinate conversion unit 44 uses the difference between the intersection of the center lines 171a and the origin (0, 0) of the stage 31 (the center of the wafer 100 (first origin)) shown in FIG. 19 as an offset. In the example of FIGS. 18 and 19, the intersection of the center lines 171a and the origin (0, 0) of the stage 31 coincide with each other, and the offset is zero.

  The defect inspection apparatus 30 obtains the offset in this manner, thereby enabling each shot in the virtual layout 170 to be recognized by the coordinates on the stage 31. As shown in FIG. 20, the origin of each shot (the corner of the shot (second origin)) is the intersection of the center line 171a of the scribe line 171 that defines each shot, or an origin mark 173 set near the intersection. The position can be set to When the origin mark 173 is used, a rule is defined such that the origin mark 173 has, for example, the upper left corner 173a as the origin. The origin position (coordinates) of each shot can be corrected by incorporating a difference between the intersection of the center line 171a and the corner 173a as an offset in advance.

  The defect inspection apparatus 30 sets the offset, and then, as shown in FIG. 21, the coordinate conversion unit 44 sets the first origin O1 of the defect detected by the defect detection unit 38 (the origin (0, 0) of the stage 31). ) Are converted into coordinates from the second origin O2 (the corner of the shot). That is, as shown in FIG. 21, the defect inspection apparatus 30 includes the coordinates (x1, y1) from the first origin O1 of the defect 180 detected by the defect detection unit 38 and stored in the storage unit 35, and each A shot 181 including the defect 180 is obtained from the shot arrangement (coordinates). Then, the second origin O2 (x2, y2) set at the corner of the shot 181 is obtained, and the coordinates (x1, y1) of the defect 180 are determined from the coordinates (x1) from the second origin O2 (x2, y2). -X2, y1-y2). Thereby, if the shot 181 is specified, the defect inspection apparatus 30 can recognize that the defect 180 exists at the position of the coordinates (x1-x2, y1-y2) in the shot 181.

  The defect inspection apparatus 30 performs the coordinate conversion as described above for all or some of the defects detected by the defect detection unit 38, and stores the converted coordinates in the storage unit 35 (step S25). Further, the defect inspection apparatus 30 outputs the converted coordinates stored in the storage unit 35 to another defect inspection apparatus by the coordinate output unit 45 (step S26).

The defect inspection apparatus 30 as described above can be used in a defect inspection system together with another defect inspection apparatus such as an SEM review apparatus.
22 and 23 are diagrams showing an example of the defect inspection system.

  A defect inspection system 50 shown in FIG. 22 includes a defect inspection apparatus 30 and an SEM review apparatus 51. In the SEM review apparatus 51, the wafer 100 that has been inspected by the defect inspection apparatus 30 is positioned and placed on the stage 51a. The defect inspection device 30 outputs the coordinates of the defect after conversion by the coordinate conversion unit 44 stored in the storage unit 35 to the SEM review device 51 by the coordinate output unit 45.

  The SEM review device 51 identifies a shot of the wafer 100, and acquires an SEM image of a defect with the acquisition unit 51b based on the coordinates from the origin set at the corner of the shot. The coordinates of the defect output from the defect inspection apparatus 30 to the SEM review apparatus 51 are the coordinates from the origin set at the corner of the shot. Therefore, when the SEM image is acquired by the SEM review apparatus 51, the target defect is prevented from being out of the field of view of the SEM, and the SEM image of the defect at the edge of the wafer 100 detected by the defect inspection apparatus 30 is obtained. It is possible to obtain automatically with high accuracy.

  As shown in FIG. 23, in addition to the defect inspection apparatus (edge inspection apparatus) 30 for inspecting defects at the edge of the wafer 100, another defect inspection apparatus (surface) for inspecting defects inside the edge of the wafer 100. It is also possible to realize a defect inspection system 50 a that further includes a defect inspection apparatus 52. The defect inspection apparatus 52 detects a defect in an area inside the edge of the wafer 100 with coordinates from the origin set at the corner of the shot, stores the coordinates in the storage unit 52a, and stores the stored coordinates. Is output from the coordinate output unit 52b to the SEM review device 51. The SEM review device 51 accurately outputs the SEM image of the defect in the region inside the edge of the wafer 100 based on the coordinates from the origin set at the corner of the shot output from the defect inspection device 52. Get automatically.

Note that the processing functions of the defect inspection apparatus 30 can be realized using a computer.
FIG. 24 is a diagram illustrating a configuration example of hardware included in a defect inspection apparatus using a computer.

  The entire defect inspection apparatus 30 is controlled by a CPU (Central Processing Unit) 201 to realize the processing functions as described above. A RAM (Random Access Memory) 202 connected to the CPU 201 via the bus 208 temporarily stores at least part of an OS (Operating System) program and application programs to be executed by the CPU 201. The RAM 202 stores various data necessary for processing by the CPU 201.

  Peripheral devices connected to the bus 208 include an HDD 203, a graphic processing device 204, an input interface 205, an optical drive device 206, and a communication interface 207. The HDD 203 stores an OS program, application programs, and various data (for example, data such as recipes, defect coordinates, and information related to shots). The graphic processing device 204 displays an image on the screen of a monitor 301 such as a display device or a liquid crystal display device using a CRT (Cathode Ray Tube) in accordance with a command from the CPU 201. The input interface 205 transmits a signal (for example, a signal indicating information about a recipe, a shot, etc.) sent from the keyboard 302 or the mouse 303 to the CPU 201. The optical drive device 206 reads data recorded on an optical disc 304 such as a DVD (Digital Versatile Disc) -RAM or a CD-ROM (Compact Disc Read Only Memory) using a laser beam or the like. The communication interface 207 performs transmission / reception of data (transmission of defect coordinates after conversion to the SEM review apparatus, etc.) with other apparatuses via the network 400.

  With the above hardware configuration, the processing function of the defect inspection apparatus 30 can be realized. Note that the processing function of the defect inspection apparatus 10 can also be realized by a hardware configuration similar to this.

  In addition, a program describing the processing contents of functions that the defect inspection apparatuses 10 and 30 should have is provided. By executing the program on a computer, the above processing functions are realized on the computer. The program describing the processing contents can be recorded on a computer-readable recording medium.

Regarding the embodiment described above, the following additional notes are further disclosed.
(Appendix 1) A step of acquiring a surface image of a wafer including a plurality of scribe lines;
Using the acquired surface image, detecting defects of the wafer by coordinates from a first origin set on the wafer;
Using the acquired surface image, detecting one scribe line of the plurality of scribe lines;
Converting the coordinates of the defect from the first origin based on the detected one scribe line to coordinates from the second origin set in the plurality of scribe lines. Defect inspection method.

(Additional remark 2) The process of detecting the edge of the wafer contained in the acquired surface image,
Determining the position of the detected one scribe line on the wafer based on the arrangement of the detected one scribe line and the edge of the wafer; and
The defect inspection method according to appendix 1, wherein coordinates of the defect from the first origin are converted into coordinates from the second origin based on the position.

  (Supplementary note 3) The supplementary note 2 is characterized in that the detected one scribe line is extended toward an end of the detected wafer, and an arrangement of the one scribe line and the end of the wafer is obtained. Described defect inspection method.

  (Supplementary Note 4) According to the supplementary note 2 or 3, the arrangement of the one scribe line and the edge of the wafer is compared with a preset arrangement to determine the position of the one scribe line. Defect inspection method.

(Additional remark 5) The process of producing | generating the virtual layout of the shot of the exposure performed with respect to the said wafer based on said one said scribe line detected,
The defect inspection method according to any one of appendices 1 to 4, wherein the coordinates of the defect from the first origin are converted into coordinates from the second origin set in the shot of the virtual layout. .

(Additional remark 6) The said surface image is acquired along the outer periphery of the said wafer, The defect inspection method in any one of Additional remark 1 thru | or 5 characterized by the above-mentioned.
(Additional remark 7) Extracting the surface image corresponding to the area | region where the said 1 scribe line of the said wafer is included among the acquired said surface images, and detecting the said 1 scribe line from the extracted said surface image The defect inspection method according to any one of appendices 1 to 6, wherein:

  (Additional remark 8) The defect inspection method in any one of additional remark 1 thru | or 7 further including the process of acquiring the electron microscope image of the said defect using the coordinate from the said 2nd origin of the said defect.

(Supplementary Note 9) An acquisition unit that acquires a surface image of a wafer including a plurality of scribe lines;
Using the surface image acquired by the acquisition unit, a first detection unit that detects a defect of the wafer by coordinates from a first origin set on the wafer;
A second detection unit that detects one scribe line of the plurality of scribe lines using the surface image acquired by the acquisition unit;
Based on the one scribe line detected by the second detection unit, the coordinates of the defect detected by the first detection unit from the first origin are set in the plurality of scribe lines. A defect inspection apparatus, comprising: a conversion unit that converts coordinates from the origin.

(Supplementary Note 10) An acquisition unit that acquires a surface image of a wafer including a plurality of scribe lines;
Using the surface image acquired by the acquisition unit, a first detection unit that detects a defect of the wafer by coordinates from a first origin set on the wafer;
A second detection unit that detects one scribe line of the plurality of scribe lines using the surface image acquired by the acquisition unit;
Based on the one scribe line detected by the second detection unit, the coordinates of the defect detected by the first detection unit from the first origin are set in the plurality of scribe lines. A first defect inspection apparatus including a conversion unit for converting the coordinates from the origin,
A defect inspection system comprising: a second defect inspection device including a second acquisition unit that acquires an electron microscope image of the defect using coordinates of the defect from the second origin.

DESCRIPTION OF SYMBOLS 1,50,50a Defect inspection system 10,30,52 Defect inspection apparatus 11,21,51b Acquisition part 12 1st detection part 13 2nd detection part 14 Conversion part 15,35,52a Storage part 16,22,31,51a Stage 20, 51 SEM review device 32 Rotation mechanism unit 33 Drive control unit 34 Transport unit 34a Port 34b Handler 34c Positioning mechanism unit 36 Image acquisition unit 37 Display unit 38 Defect detection unit 39 Scribe line detection unit 40 Edge line detection unit 41 Pattern Acquisition unit 42 Pattern comparison unit 43 Virtual layout generation unit 44 Coordinate conversion unit 45, 52b Coordinate output unit 46 Input unit 100 Wafer 101 Scribe line 120 Surface image 121, 121a Part 121b, 122, 150, 160 Reflectivity waveform 121c Dotted line 130 Shot Y-out 131, 131a, 131b, 131c, 131d, 141, 171 Scribe line 140, 140a Binary image 142 Edge line 143 Cross pattern 143a Intersection angle 145 Pattern 151, 161 Waveform portion 170 Virtual layout 171a Center line 173 Origin mark 173a Angle 180 Defect 181 shot 201 CPU
202 RAM
203 HDD
204 Graphic Processing Device 205 Input Interface 206 Optical Drive Device 207 Communication Interface 208 Bus 301 Monitor 302 Keyboard 303 Mouse 304 Optical Disk 400 Network O1, O2 Origin T1, T2 Threshold D1, D2, D3, D4 Direction

Claims (6)

Acquiring a wafer surface image including a plurality of scribe lines;
Using the acquired surface image, detecting defects of the wafer by coordinates from a first origin set on the wafer;
Using the acquired surface image, detecting one scribe line of the plurality of scribe lines;
Converting the coordinates of the defect from the first origin based on the detected one scribe line to coordinates from the second origin set in the plurality of scribe lines. Defect inspection method. Detecting an edge of the wafer included in the acquired surface image;
Determining the position of the detected one scribe line on the wafer based on the arrangement of the detected one scribe line and the edge of the wafer; and
The defect inspection method according to claim 1, wherein coordinates of the defect from the first origin are converted to coordinates from the second origin based on the position. Generating a virtual layout of exposure shots performed on the wafer based on the detected one scribe line;
The defect inspection method according to claim 1, wherein coordinates of the defect from the first origin are converted into coordinates from the second origin set in the shot of the virtual layout.   The defect inspection method according to claim 1, further comprising a step of acquiring an electron microscope image of the defect using coordinates of the defect from the second origin. An acquisition unit for acquiring a surface image of a wafer including a plurality of scribe lines;
Using the surface image acquired by the acquisition unit, a first detection unit that detects a defect of the wafer by coordinates from a first origin set on the wafer;
A second detection unit that detects one scribe line of the plurality of scribe lines using the surface image acquired by the acquisition unit;
Based on the one scribe line detected by the second detection unit, the coordinates of the defect detected by the first detection unit from the first origin are set in the plurality of scribe lines. A defect inspection apparatus, comprising: a conversion unit that converts coordinates from the origin. An acquisition unit for acquiring a surface image of a wafer including a plurality of scribe lines;
Using the surface image acquired by the acquisition unit, a first detection unit that detects a defect of the wafer by coordinates from a first origin set on the wafer;
A second detection unit that detects one scribe line of the plurality of scribe lines using the surface image acquired by the acquisition unit;
Based on the one scribe line detected by the second detection unit, the coordinates of the defect detected by the first detection unit from the first origin are set in the plurality of scribe lines. A first defect inspection apparatus including a conversion unit for converting the coordinates from the origin,
A defect inspection system comprising: a second defect inspection device including a second acquisition unit that acquires an electron microscope image of the defect using coordinates of the defect from the second origin.

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