JP2012129346A - Etchant composition - Google Patents

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JP2012129346A
JP2012129346A JP2010279129A JP2010279129A JP2012129346A JP 2012129346 A JP2012129346 A JP 2012129346A JP 2010279129 A JP2010279129 A JP 2010279129A JP 2010279129 A JP2010279129 A JP 2010279129A JP 2012129346 A JP2012129346 A JP 2012129346A
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fluoride
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etching solution
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JP5700784B2 (en
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Kenta Inoue
健太 井上
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Adeka Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions

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  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
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Abstract

PROBLEM TO BE SOLVED: To provide an etchant composition which prevents the problems of generation of odor and deterioration of an etched substrate, or the like, due to corrosion and exhibits sufficient etching rate and etching selectivity especially for an indium oxide based film.SOLUTION: The etchant composition of a metal oxide film consists of a solution containing (A) 5-20 mass% of 2-hydroxy ethane sulfonic acid or its salt in terms of 2-hydroxy ethane sulfonic acid, and (B) 0.05-5 mass% of at least one kind of fluoride compound selected from hydrogen fluoride, ammonium fluoride, potassium fluoride, sodium fluoride and lithium fluoride.

Description

本発明は、金属酸化物被膜のエッチング液組成物に関し、特に、インジウム−スズ酸化物（以下ＩＴＯと略す）、インジウム−亜鉛酸化物（以下ＩＺＯと略す）等の酸化インジウムを含有する酸化インジウム系被膜の加工に適したエッチング液に関する。   The present invention relates to an etching solution composition for a metal oxide film, and in particular, an indium oxide system containing indium oxide such as indium-tin oxide (hereinafter abbreviated as ITO) and indium-zinc oxide (hereinafter abbreviated as IZO). The present invention relates to an etching solution suitable for coating processing.

透明導電膜等に使用される酸化インジウム系被膜のウエットエッチングに関する技術は、種々知られているが、安価でエッチング速度が良好であることから、塩酸を含む水溶液がエッチング液組成物として多く使用されている。しかし、塩酸は、塩化水素の揮発と強い腐食性のため、臭気の発生及び装置や被エッチング基材等の腐食劣化が問題となる。また、これに加えて、酸化インジウム系被膜と、基材や他の層とにおけるエッチングの選択性を得るのが難しいという問題を有している。   Various techniques relating to wet etching of indium oxide-based coatings used for transparent conductive films and the like are known, but since they are inexpensive and have good etching rates, aqueous solutions containing hydrochloric acid are often used as etching solution compositions. ing. However, since hydrochloric acid volatilizes hydrogen chloride and has strong corrosiveness, generation of odors and corrosion deterioration of the apparatus and the substrate to be etched are problematic. In addition, there is a problem that it is difficult to obtain etching selectivity between the indium oxide-based film and the base material or other layers.

塩酸を含有しない酸化インジウム系被膜のエッチング液組成物は、種々報告されている。例えば、特許文献１には、銀又は銀合金からなる金属膜と、透明導電膜とを一液でエッチングするための銅イオン、硝酸、フッ素化合物を必須成分として含む組成物が開示されている。必須成分のフッ化化合物として、フッ化アンモニウムが例示されており、任意成分として、ギ酸、酢酸、シュウ酸、クエン酸等のカルボン酸が開示されている。   Various etchant compositions for indium oxide-based films that do not contain hydrochloric acid have been reported. For example, Patent Document 1 discloses a composition containing copper ions, nitric acid, and a fluorine compound as essential components for etching a metal film made of silver or a silver alloy and a transparent conductive film in one liquid. Ammonium fluoride is exemplified as an essential component fluorinated compound, and carboxylic acids such as formic acid, acetic acid, oxalic acid, and citric acid are disclosed as optional components.

特許文献２には、多価カルボン酸とフッ化水素酸塩を含有するＩＴＯエッチング液組成物が開示されている。多価カルボン酸としては、シュウ酸、クエン酸が例示されており、フッ化物塩としては、フッ化ナトリウム、フッ化カリウム、フッ化アンモニウムが開示されている。   Patent Document 2 discloses an ITO etching solution composition containing a polyvalent carboxylic acid and a hydrofluoric acid salt. Examples of polyvalent carboxylic acids include oxalic acid and citric acid, and sodium fluoride, potassium fluoride, and ammonium fluoride are disclosed as fluoride salts.

特開２００９−２０６４６２号公報JP 2009-206462 A 特開２０１０−６７８２３号公報JP 2010-67823 A

しかしながら、上記に開示されたエッチング液組成物は、エッチング速度が遅く、エッチング選択性も充分なものではなかった。   However, the etching solution composition disclosed above has a low etching rate and an insufficient etching selectivity.

したがって、本発明は、上記問題を解決するためになされたものであり、臭気の発生及び装置や被エッチング基材等の腐食劣化が抑制された、特に酸化インジウム系被膜に対して、充分なエッチング速度とエッチングの選択性を示すエッチング液組成物を提供することを目的とする。   Therefore, the present invention has been made to solve the above-mentioned problems, and is sufficient etching particularly for indium oxide-based coatings in which generation of odor and corrosion deterioration of the apparatus and the substrate to be etched are suppressed. It is an object of the present invention to provide an etchant composition exhibiting speed and etching selectivity.

本発明者等は、上記問題を解決すべく鋭意検討を重ねた結果、２−ヒドロキシエタンスルホン酸とフッ化化合物を特定の割合で併用することにより、上記問題を解決し得ることを見出し、本発明に至った。   As a result of intensive studies to solve the above problems, the present inventors have found that the above problems can be solved by using 2-hydroxyethanesulfonic acid and a fluorinated compound in a specific ratio. Invented.

すなわち、本発明は、（Ａ）２−ヒドロキシエタンスルホン酸又はその塩を、２−ヒドロキシエタンスルホン酸換算で５〜２０質量％と、（Ｂ）フッ化水素、フッ化アンモニウム、フッ化カリウム、フッ化ナトリウム及びフッ化リチウムから選ばれる少なくとも１種類のフッ化化合物０．０５〜５質量％とを含む水溶液からなることを特徴とする金属酸化物被膜のエッチング液組成物である。   That is, the present invention comprises (A) 2-hydroxyethanesulfonic acid or a salt thereof in an amount of 5 to 20% by mass in terms of 2-hydroxyethanesulfonic acid, and (B) hydrogen fluoride, ammonium fluoride, potassium fluoride, An etching solution composition for a metal oxide film comprising an aqueous solution containing 0.05 to 5% by mass of at least one fluorinated compound selected from sodium fluoride and lithium fluoride.

本発明によれば、酸化インジウム系被膜に対して、充分なエッチング速度とエッチングの選択性を有するエッチング液組成物が提供される。   ADVANTAGE OF THE INVENTION According to this invention, the etching liquid composition which has sufficient etching rate and etching selectivity with respect to an indium-oxide type film is provided.

本発明の金属酸化物被膜のエッチング液組成物（以下、単にエッチング液組成物ということもある）は、（Ａ）２−ヒドロキシエタンスルホン酸又はその塩を、２−ヒドロキシエタンスルホン酸換算で５〜２０質量％と、（Ｂ）フッ化水素、フッ化アンモニウム、フッ化カリウム、フッ化ナトリウム及びフッ化リチウムから選ばれる少なくとも１種類のフッ化化合物０．０５〜５質量％を必須成分として含み、必要に応じて、本発明の効果を阻害しない範囲で、添加剤を含有してもよい。本発明のエッチング液組成物は、上記（Ａ）、（Ｂ）の成分及び必要に応じて使用される添加剤を含有し、残分は水である。   The metal oxide film etching solution composition of the present invention (hereinafter sometimes simply referred to as an etching solution composition) comprises (A) 2-hydroxyethanesulfonic acid or a salt thereof in terms of 2-hydroxyethanesulfonic acid. -20 mass% and (B) 0.05-5 mass% of at least 1 sort (s) of fluorinated compounds chosen from hydrogen fluoride, ammonium fluoride, potassium fluoride, sodium fluoride, and lithium fluoride as an essential component If necessary, an additive may be contained as long as the effects of the present invention are not impaired. The etching solution composition of the present invention contains the components (A) and (B) and additives used as necessary, and the balance is water.

本発明のエッチング液組成物における（Ａ）成分の２−ヒドロキシエタンスルホン酸の塩の例としては、ナトリウム塩、カリウム塩、リチウム塩、アンモニウム塩等の水溶性の塩が挙げられる。通常（Ａ）成分としては、２−ヒドロキシエタンスルホン酸を使用すればよい。その含有量は、２−ヒドロキシエタンスルホン酸換算で５〜２０質量％、好ましくは、５〜１５質量％である。（Ａ）成分の含有量が下限よりも少ないと、充分なエッチング速度が得られない。一方、（Ａ）成分の含有量を上限よりも多くしてもエッチング速度の向上は図られず、却って装置部材への腐食等の不具合を生じる。   Examples of the salt of 2-hydroxyethanesulfonic acid as the component (A) in the etching solution composition of the present invention include water-soluble salts such as sodium salt, potassium salt, lithium salt, and ammonium salt. Usually, 2-hydroxyethanesulfonic acid may be used as the component (A). Its content is 5 to 20% by mass, preferably 5 to 15% by mass in terms of 2-hydroxyethanesulfonic acid. When the content of the component (A) is less than the lower limit, a sufficient etching rate cannot be obtained. On the other hand, even if the content of the component (A) is increased from the upper limit, the etching rate is not improved, but on the contrary, problems such as corrosion on the apparatus members occur.

本発明のエッチング液組成物における（Ｂ）成分のフッ化化合物は、フッ化水素、フッ化アンモニウム、フッ化カリウム、フッ化ナトリウム、フッ化リチウムから選ばれ、これらは１種類でもよく、２種類以上を混合して用いてもよい。中でも、フッ化カリウムが、安全性、衛生性の観点から好ましい。（Ｂ）の含有量は、０．０５〜５質量％、好ましくは０．１〜２質量％である。また、（Ｂ）の含有量が下限よりも少ないと、充分なエッチング速度が得られない。一方、（Ｂ）の含有量が上限よりも多いと、装置や基材に対する腐食性が大きくなる不具合が生じる。   The fluorinated compound of the component (B) in the etching solution composition of the present invention is selected from hydrogen fluoride, ammonium fluoride, potassium fluoride, sodium fluoride, and lithium fluoride, and these may be one kind or two kinds You may mix and use the above. Of these, potassium fluoride is preferred from the viewpoints of safety and hygiene. Content of (B) is 0.05-5 mass%, Preferably it is 0.1-2 mass%. Further, when the content of (B) is less than the lower limit, a sufficient etching rate cannot be obtained. On the other hand, when there is more content of (B) than an upper limit, the malfunction which becomes corrosive with respect to an apparatus or a base material will arise.

また、本発明のエッチング液組成物には、上記（Ａ）成分及び（Ｂ）成分のほかに、本発明の効果を阻害することのない範囲で、周知の添加剤を配合させることができる。当該添加剤としては、エッチング液組成物の安定化剤、各成分の可溶化剤、消泡剤、ｐＨ調整剤、比重調整剤、粘度調整剤、濡れ性改善剤、キレート剤、界面活性剤等が挙げられ、これらを使用する場合の濃度は、一般的に、０．００１質量％〜１０質量％の範囲である。   In addition to the above components (A) and (B), the etching solution composition of the present invention can be blended with known additives as long as the effects of the present invention are not impaired. Examples of the additive include an etchant composition stabilizer, a solubilizing agent for each component, an antifoaming agent, a pH adjusting agent, a specific gravity adjusting agent, a viscosity adjusting agent, a wettability improving agent, a chelating agent, and a surfactant. The concentration in the case of using these is generally in the range of 0.001% by mass to 10% by mass.

本発明のエッチング液組成物は、金属酸化物被膜をエッチングする際に使用される。エッチングされる対象の金属酸化物としては、酸化珪素、酸化アルミニウム、酸化亜鉛、酸化イットリウム、酸化インジウム、ＩＴＯ、ＩＺＯ、アルミニウム−亜鉛酸化物（ＡＺＯ）等が挙げられる。これらの中でも特に、酸化インジウム、ＩＴＯ、ＩＺＯ等の酸化インジウムを含有する酸化インジウム系被膜に対して、良好なエッチング速度を示す。また、これらの酸化インジウム系被膜に対して、特に良好なエッチング選択性を示す。   The etching solution composition of the present invention is used when etching a metal oxide film. Examples of the metal oxide to be etched include silicon oxide, aluminum oxide, zinc oxide, yttrium oxide, indium oxide, ITO, IZO, and aluminum-zinc oxide (AZO). Among these, in particular, a good etching rate is exhibited with respect to an indium oxide-based film containing indium oxide such as indium oxide, ITO, or IZO. In addition, the etching selectivity is particularly good for these indium oxide-based films.

本発明のエッチング液組成物は、上記特性を有するので、太陽電池、表示素子、タッチパネル、照明器具等に使用される透明導電膜であるＩＴＯ被膜や、ＩＺＯ被膜のエッチングに適している。   Since the etching solution composition of the present invention has the above properties, it is suitable for etching an ITO film or an IZO film that is a transparent conductive film used in solar cells, display elements, touch panels, lighting fixtures and the like.

本発明のエッチング液組成物を用いて被膜を除去するには、被加工基材を上記本発明のエッチング液組成物に浸漬させるか、被加工基材に本発明のエッチング液組成物をスプレー等すればよい。浸漬条件は、部材の形状や膜厚などによって異なるので、これらに応じて適宜選択すればよいが、例えば、温度が低温であるとエッチングの効率が悪くなるので、好ましくは、１０〜８０℃、より好ましくは２０〜６０℃で行うのがよい。   In order to remove the coating film using the etching solution composition of the present invention, the substrate to be processed is immersed in the etching solution composition of the present invention, or the processing substrate is sprayed with the etching solution composition of the present invention. do it. The immersion conditions vary depending on the shape and film thickness of the member, and may be appropriately selected depending on them. For example, since the etching efficiency deteriorates when the temperature is low, preferably 10 to 80 ° C., More preferably, it is good to carry out at 20-60 degreeC.

上記浸漬、スプレー等によるエッチング時間は、特に限定されるものではなく、被膜が除去されるまでの時間行えばよい。被膜が、通常用いられる被膜の厚さである、膜厚０．０１〜５００μｍであれば、エッチングは、数秒〜十数分行えばよい。尚、本発明のエッチング液組成物は、エッチング選択性が良好であるため、被膜のエッチングが終了して尚、過剰な時間の処理をしても基材等の腐食化といった問題がない。特に、酸化インジウム系被膜に対して、より良好なエッチング選択性を示す。   The etching time by the above immersion, spraying or the like is not particularly limited, and may be performed until the coating is removed. If the film is a film thickness of 0.01 to 500 μm, which is the thickness of a commonly used film, etching may be performed for a few seconds to a few dozen minutes. Since the etching solution composition of the present invention has good etching selectivity, there is no problem of corrosion of the base material or the like even after the film etching is completed and the treatment for an excessive time. In particular, it exhibits better etching selectivity for indium oxide-based films.

以下、実施例及び比較例により本発明を詳細に説明するが、これらによって本発明が限定されるものではない。   EXAMPLES Hereinafter, although an Example and a comparative example demonstrate this invention in detail, this invention is not limited by these.

［実施例１］
表１に記載した濃度の２−ヒドロキシエタンスルホン酸と、表１に記載のフッ化化合物をカッコ内に記載した濃度で含むエッチング液組成物Ｎｏ．１〜Ｎｏ．１０を調製した。なお、残量は全て水である。３０℃に調温したそれぞれのエッチング液に、ＰＥＴフィルム上にスパッタリングにより膜厚１２５μｍのＩＴＯ膜を成膜した基材を浸漬し、ＩＴＯ膜が除去されるまでの時間を測定した。 [Example 1]
Etching solution composition No. 1 containing 2-hydroxyethanesulfonic acid at the concentration described in Table 1 and the fluorinated compound described in Table 1 at the concentration described in parentheses. 1-No. 10 was prepared. The remaining amount is all water. In each etching solution adjusted to 30 ° C., a substrate on which a 125 μm thick ITO film was formed by sputtering on a PET film was immersed, and the time until the ITO film was removed was measured.

Figure 2012129346
Figure 2012129346

［比較例１］
表２に記載の溶質を溶解させた水溶液からなる比較用エッチング液組成物Ａ〜Ｌを調製した。上記実施例と同様の操作を行い、ＩＴＯ膜が除去されるまでの時間を測定した。 [Comparative Example 1]
Comparative etching liquid compositions A to L made of an aqueous solution in which the solute shown in Table 2 was dissolved were prepared. The same operation as in the above example was performed, and the time until the ITO film was removed was measured.

Figure 2012129346
Figure 2012129346

エッチング液Ｎｏ．１〜１０と、比較用エッチング組成物Ａとの比較から、本発明のエッチング液は、塩酸と同等以上のＩＴＯエッチング速度を得ることができることが確認された。また、エッチング液Ｎｏ．１、４、１０と、エッチング液Ｃ、Ｄとの比較から、本発明のエッチング液は、２−ヒドロキシエタンスルホン酸を、硫酸、硝酸に変えたものと比べて、同等以上のＩＴＯエッチング速度を与えることが明らかである。これらの結果から、本発明のエッチング液は、従来のエッチング液で問題となってきた、臭気の発生、装置や被エッチング基材等に対する腐食劣化、エッチング選択性の問題を改善でき、しかもエッチング速度に優れたエッチング液であることが確認できる。   Etching solution No. From comparison between 1 to 10 and comparative etching composition A, it was confirmed that the etching solution of the present invention can obtain an ITO etching rate equal to or higher than that of hydrochloric acid. Etching solution No. From comparison of 1, 4, 10 and etching solutions C and D, the etching solution of the present invention has an ITO etching rate equal to or higher than that obtained by changing 2-hydroxyethanesulfonic acid to sulfuric acid or nitric acid. It is clear to give. From these results, the etching solution of the present invention can improve the problems of odor generation, corrosion degradation on the apparatus and the substrate to be etched, etching selectivity, etc., which have been a problem with conventional etching solutions, and the etching rate. It can be confirmed that the etching solution is excellent.

また、エッチング液Ｎｏ．６と、比較用エッチング液Ｅ、Ｆ、Ｇとの比較から、本発明のエッチング液は、２−ヒドロキシエタンスルホン酸を他の有機酸に変えたものと比べて、同等以上のＩＴＯエッチング速度を与えることが確認できる。   Etching solution No. 6 and comparative etching solutions E, F, and G, the etching solution of the present invention has an ITO etching rate equal to or higher than that obtained by changing 2-hydroxyethanesulfonic acid to another organic acid. It can be confirmed to give.

また、エッチング液Ｎｏ．１〜１０と、比較用エッチング液Ｈ、Ｉ、Ｊ、Ｋ、Ｌとの比較（例えば、Ｎｏ．３とＩとの比較）から、本発明のエッチング液は、フッ化化合物を塩化化合物に変えたものと比べて、優れたエッチング速度を与えることが確認できる。   Etching solution No. 1 to 10 and comparative etching solutions H, I, J, K, and L (for example, comparison between No. 3 and I), the etching solution of the present invention changes the fluorinated compound to a chlorinated compound. It can be confirmed that an excellent etching rate is given compared to the above.

［実施例２、比較例２］
上記実施例１に記載のエッチング液Ｎｏ．６と比較例１に記載のエッチング液Ｆについて、アルミニウムおよびチタニウムに対する腐食試験を行った。腐食試験は、各基材のテストピース（５ｃｍ×２．５ｃｍ×厚さ１ｍｍ）を４０℃のエッチング液に７時間浸漬し、浸漬後の質量減少で評価した。結果を表３に示す。 [Example 2, Comparative Example 2]
Etching solution No. 1 described in Example 1 above. 6 and the etching solution F described in Comparative Example 1 were subjected to a corrosion test on aluminum and titanium. The corrosion test was evaluated by immersing a test piece (5 cm × 2.5 cm × thickness 1 mm) of each substrate in an etching solution at 40 ° C. for 7 hours and reducing the mass after the immersion. The results are shown in Table 3.

Figure 2012129346
Figure 2012129346

上記より、本発明のエッチング液Ｎｏ．６は、２−ヒドロキシエタンスルホン酸をシュウ酸に変えたものと比べて、アルミニウムおよびチタニウムに対する腐食性が小さいことが確認できた。   From the above, the etching solution No. 1 of the present invention. 6 was confirmed to be less corrosive to aluminum and titanium than the one obtained by changing 2-hydroxyethanesulfonic acid to oxalic acid.

［実施例３］
上記、実施例１に記載のエッチング液Ｎｏ．６及びＮｏ．７を使用して、５０ｎｍの酸化イットリウム膜、３０ｎｍの酸化珪素膜の各被膜についてエッチング試験を行った。具体的には、それぞれの膜基材を４５℃のエッチング液浸漬し、１５分浸漬した。この結果、それぞれの膜が除去したことが確認された。 [Example 3]
Etching solution No. 1 described in Example 1 above. 6 and no. 7 was used to perform an etching test on each film of a 50 nm yttrium oxide film and a 30 nm silicon oxide film. Specifically, each film substrate was immersed in an etching solution at 45 ° C. and immersed for 15 minutes. As a result, it was confirmed that each film was removed.

Claims (4)

（Ａ）２−ヒドロキシエタンスルホン酸又はその塩を、２−ヒドロキシエタンスルホン酸換算で５〜２０質量％と、（Ｂ）フッ化水素、フッ化アンモニウム、フッ化カリウム、フッ化ナトリウム及びフッ化リチウムから選ばれる少なくとも１種類のフッ化化合物０．０５〜５質量％とを含む水溶液からなることを特徴とする金属酸化物被膜のエッチング液組成物。   (A) 2-hydroxyethanesulfonic acid or a salt thereof in an amount of 5 to 20% by mass in terms of 2-hydroxyethanesulfonic acid; (B) hydrogen fluoride, ammonium fluoride, potassium fluoride, sodium fluoride and fluoride An etching solution composition for a metal oxide film, comprising an aqueous solution containing 0.05 to 5% by mass of at least one fluoride compound selected from lithium. 前記（Ｂ）フッ化化合物が、フッ化カリウムである請求項１に記載のエッチング液組成物。   The etching solution composition according to claim 1, wherein the (B) fluoride compound is potassium fluoride. 前記金属酸化物被膜が、酸化インジウム系被膜である請求項１又は２に記載のエッチング液組成物。   The etching solution composition according to claim 1, wherein the metal oxide film is an indium oxide-based film. 前記酸化インジウム系被膜が、酸化インジウム被膜、インジウム−スズ酸化物被膜又はインジウム−亜鉛酸化物被膜のいずれかである請求項３に記載のエッチング液組成物。   The etching solution composition according to claim 3, wherein the indium oxide-based film is any one of an indium oxide film, an indium-tin oxide film, and an indium-zinc oxide film.
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JP2014130893A (en) * 2012-12-28 2014-07-10 Mitsubishi Gas Chemical Co Inc Etchant and etching method for oxide comprising indium, gallium and oxygen, or indium, gallium, zinc and oxygen
KR20150032487A (en) 2013-09-18 2015-03-26 간토 가가꾸 가부시키가이샤 A metal oxide etching solution and an etching method
JP2016006839A (en) * 2014-06-20 2016-01-14 三菱瓦斯化学株式会社 Etchant of oxide including at least indium, gallium, zinc and silicone and etching method

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TWI488943B (en) * 2013-04-29 2015-06-21 Chi Mei Corp Etching paste composition and the application thereof

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JP2010265547A (en) * 2009-05-14 2010-11-25 Dongjin Semichem Co Ltd Etchant composition and method for manufacturing array substrate using the same

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JP2000507304A (en) * 1997-01-21 2000-06-13 ウオン リー、キ Composition for cleaning and etching electronic displays and substrates
JP2008541447A (en) * 2005-05-13 2008-11-20 サッチェム，インコーポレイテッド Selective wet etching of oxides
JP2010265547A (en) * 2009-05-14 2010-11-25 Dongjin Semichem Co Ltd Etchant composition and method for manufacturing array substrate using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014130893A (en) * 2012-12-28 2014-07-10 Mitsubishi Gas Chemical Co Inc Etchant and etching method for oxide comprising indium, gallium and oxygen, or indium, gallium, zinc and oxygen
KR20150032487A (en) 2013-09-18 2015-03-26 간토 가가꾸 가부시키가이샤 A metal oxide etching solution and an etching method
JP2016006839A (en) * 2014-06-20 2016-01-14 三菱瓦斯化学株式会社 Etchant of oxide including at least indium, gallium, zinc and silicone and etching method

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