JP2012109808A - Light receiving element and control method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique related to a light receiving element which performs two or more kinds of operations.SOLUTION: In an imaging device, the light receiving element includes: a plurality of photoelectric conversion parts for generating electric charges corresponding to an exposure; a plurality of charge storage parts for storing the electric charges generated from the photoelectric conversion parts; a charge transfer part for transferring the electric charges generated from the photoelectric conversion parts to the charge storage parts; and a plurality of distribution gate parts provided between the charge transfer part and the charge storage parts, for controlling the entry of the electric charges from the charge transfer part to the charge storage parts by being opened and closed. The charge transfer part is in contact with the plurality of photoelectric conversion parts, the plurality of distribution gates and the plurality of charge storage parts. The charge storage parts and the distribution gate parts have a projection part to be in contact with the charge transfer part with respect to the direction where the photoelectric conversion part corresponding to themselves is positioned. In the case of a first operating state, the distribution gate is opened so as not to overlap with the other distribution gates during exposure. In the case of a second operating state, the distribution gate is opened overlapping with the other distribution gates during the exposure.

Description

  The present invention relates to a technology of a light receiving element (pixel) used for an image sensor.

Conventionally, various image sensors have been researched and developed. For example, an imaging device has been proposed in which a large number of two light receiving elements that can be driven and controlled independently of each other are arranged (see Patent Document 1). The imaging device proposed in Patent Document 1 is provided in an imaging device that operates as follows. First, the imaging apparatus acquires an image signal based on the output of the first light receiving element and / or the second light receiving element. Next, the imaging device recognizes the scene of the subject based on the acquired image signal and acquires the field information. Next, the imaging apparatus selects a drive mode based on the acquired scene of the subject and the scene information. Then, in the selected drive mode, the imaging device drives the imaging device to acquire an image signal and generates image data from the image signal.
In addition, by sharing transistors and floating diffusions in the pixel, ensuring the aperture ratio, reducing the pixel size, and improving the resolution, and adding the signals from multiple pixels to reduce the pixel area Patent Document 2 discloses a method for coexisting an operation for suppressing the decrease in the amount. Patent Document 2 discloses a configuration in which four pixels share one pixel amplifier transistor and one reset transistor. In addition, charges are added on the floating diffusion which is an input node of the pixel amplifier transistor, so that the signal-to-noise ratio can be increased and a high S / N can be obtained.

JP 2010-74634 A JP 2005-198001 A

  However, a light receiving element that performs a plurality of types of operations including a charge distribution operation according to the application has not been proposed so far. Therefore, an object of the present invention is to provide a technique related to a light receiving element that performs a plurality of types of operations including an operation of distributing charges.

  The invention described in claim 1 is a light receiving element (for example, the pixel 221 in the embodiment), and a plurality of photoelectric conversion units (for example, the micro conversion units PDa to PDd in the embodiment) that generate charges according to the exposure amount. ), A plurality of charge storage units (for example, charge storage regions 2212a to 2212d in the embodiment) that store the charge generated from the photoelectric conversion unit, and the charge generated from the photoelectric conversion unit to the charge storage unit The charge transfer unit (for example, the charge transfer region 2213 in the embodiment) to be transferred is provided between the charge transfer unit and the charge storage unit, and the charge is transferred from the charge transfer unit to the charge storage unit by opening and closing. A plurality of sorting gates (for example, sorting gates TXa to TXd in the embodiment) for controlling entry, and the charge transfer unit includes a plurality of light The charge storage unit and the distribution gate unit are in contact with the charge transfer unit in a direction in which the photoelectric conversion unit corresponding to the conversion unit, the plurality of distribution gates, and the plurality of charge storage units are located. In the first operation state (for example, the modulated light detection mode in the embodiment), the distribution gate opens during exposure so that it does not overlap with other distribution gates. In the case of the second operation state (for example, the high pixel imaging mode in the embodiment), the distribution gate is opened overlapping with other distribution gates during exposure.

  The invention according to claim 2 is a light receiving element, a plurality of photoelectric conversion units that generate charges according to an exposure amount, a plurality of charge storage units that store charges generated from the photoelectric conversion units, A charge transfer unit configured to transfer the charge generated from the photoelectric conversion unit to the charge storage unit; and provided between the charge transfer unit and the charge storage unit; A plurality of distribution gate units for controlling the entry of charges into the unit, and the charge transfer unit is in contact with the plurality of photoelectric conversion units, the plurality of distribution gates, and the plurality of charge storage units, and the photoelectric conversion unit Either one or both of the charge transfer units has a potential potential on the charge storage unit side corresponding to the photoelectric conversion unit so that the charge generated by the photoelectric conversion unit moves, When operating The sorting gate during exposure opening so as not to overlap with other sorting gate, when the second operating state, the sorting gate during exposure to open a duplicate of another sorting gates, characterized in that.

  The invention according to claim 3 is a light receiving element, a plurality of photoelectric conversion units that generate charges according to an exposure amount, a plurality of charge storage units that store charges generated from the photoelectric conversion unit, A charge transfer unit configured to transfer the charge generated from the photoelectric conversion unit to the charge storage unit; and provided between the charge transfer unit and the charge storage unit; A plurality of sorting gates for controlling the entry of charges into the unit, and the charge transfer unit provided in the charge transfer unit, and the charge enters from the photoelectric conversion unit to the charge storage unit not corresponding to the photoelectric conversion unit Separation gates (for example, separation gates Sa-d, Sb-a, Sc-b, Sd-c in the embodiment) for controlling the charge transfer unit, and the charge transfer unit includes a plurality of photoelectric conversion units and a plurality of distribution units. Gate and In the first operation state, the distribution gate is opened so as not to overlap with other distribution gates, the separation gate is opened, and in the second operation state, the exposure gate is exposed during exposure. The sorting gate is opened overlapping with other sorting gates, and the separating gate is closed.

  The invention according to claim 4 is generated from a plurality of photoelectric conversion units that generate charges according to an exposure amount, a plurality of charge storage units that store charges generated from the photoelectric conversion units, and the photoelectric conversion units. The charge transfer unit transfers the generated charge to the charge storage unit, and is provided between the charge transfer unit and the charge storage unit, and the charge enters the charge storage unit from the charge transfer unit by opening and closing. A plurality of distribution gate units for controlling the charge transfer unit, the charge transfer unit is in contact with a plurality of photoelectric conversion unit, a plurality of distribution gates and a plurality of charge storage unit, the charge storage unit and the distribution gate unit, A method of controlling a light receiving element having a convex portion in contact with the charge transfer unit with respect to a direction in which the photoelectric conversion unit corresponding to itself is located, and in the first operation state, Sorting And then opening so as not to overlap with the bets, when the second operating state, having the steps of opening the sorting gate during exposure overlap with other sorting gates.

  The invention according to claim 5 is generated from a plurality of photoelectric conversion units that generate charges according to an exposure amount, a plurality of charge storage units that store charges generated from the photoelectric conversion units, and the photoelectric conversion units. The charge transfer unit transfers the generated charge to the charge storage unit, and is provided between the charge transfer unit and the charge storage unit, and the charge enters the charge storage unit from the charge transfer unit by opening and closing. A plurality of distribution gate units for controlling the charge transfer unit, wherein the charge transfer unit is in contact with the plurality of photoelectric conversion units, the plurality of distribution gates, and the plurality of charge storage units, and the photoelectric conversion unit and the charge transfer unit Either one or both of them is a method of controlling a light receiving element having a potential such that the charge generated by the photoelectric conversion unit moves to the charge storage unit side corresponding to the photoelectric conversion unit. One action In the case of a state, the step of opening the distribution gate so as not to overlap with other distribution gates during exposure, and in the case of the second operation state, the step of opening the distribution gate overlapping with other distribution gates during exposure, Have

  The invention according to claim 6 is generated from a plurality of photoelectric conversion units that generate charges according to an exposure amount, a plurality of charge storage units that store charges generated from the photoelectric conversion units, and the photoelectric conversion units. The charge transfer unit transfers the generated charge to the charge storage unit, and is provided between the charge transfer unit and the charge storage unit, and the charge enters the charge storage unit from the charge transfer unit by opening and closing. And a separation gate that is provided in the charge transfer unit and controls opening and closing of the charge transfer unit from the photoelectric conversion unit to the charge storage unit that does not correspond to the photoelectric conversion unit. And the charge transfer unit is in contact with the plurality of photoelectric conversion units, the plurality of distribution gates, and the plurality of charge storage units, and in the first operation state, the distribution gate is connected to another distribution gate during exposure. Open to not double, has the steps of opening the isolation gate, when the second operating state, the sorting gate during exposure opening overlaps the other sorting gate, the isolation gates are closed and the step.

  The light receiving element of the invention according to claim 1 can perform at least two operations of the first operation state and the second operation state. In the first operation state, the sorting gate is opened so as not to overlap with other sorting gates during exposure. Therefore, the charge generated by the photoelectric conversion unit moves to and accumulates in the charge accumulation unit corresponding to the open distribution gate regardless of whether the charge accumulation unit corresponds to the photoelectric conversion unit. On the other hand, in the case of the second operation state, the distribution gate opens overlapping with other distribution gates during exposure. For this reason, the charge generated by the photoelectric conversion unit appears to be dispersed in a plurality of charge storage units. However, the charge moves to the charge storage unit via a convex portion located near the photoelectric conversion unit that generates the charge. Therefore, the electric charge generated in each photoelectric conversion unit is accumulated for each corresponding charge accumulation unit. Therefore, in the second operation state, it is possible to capture an image having a higher number of pixels than the number of light receiving elements.

  In the light receiving element according to the second aspect of the present invention, either one or both of the photoelectric conversion unit and the charge transfer unit has the charge generated by the photoelectric conversion unit on the charge storage unit side corresponding to the photoelectric conversion unit. It has a potential to move. Therefore, in the second operation state, the charge generated in each photoelectric conversion unit is accumulated for each corresponding charge accumulation unit, and an image having a higher number of pixels than the number of light receiving elements can be taken.

  A light receiving element according to a third aspect of the present invention includes a separation gate that is provided in the charge transfer unit and controls opening and closing of the photoelectric conversion unit to input charges from the photoelectric conversion unit to a charge storage unit that does not correspond to the photoelectric conversion unit. is doing. In the second operation state, the separation gate is closed. Therefore, the charges generated in each photoelectric conversion unit are accumulated for each corresponding charge accumulation unit, and an image having a number of pixels higher than the number of light receiving elements can be taken.

It is a schematic block diagram showing the functional composition of the imaging device of a first embodiment. It is the schematic showing the outline of a structure of a light-receiving part. It is a block diagram showing the structure of the pixel used for a light-receiving part. It is a figure showing the equivalent circuit of the pixel of FIG. It is a figure showing the line of the section showing potential. It is a figure showing the change of the height of the potential of the pixel in modulated light detection mode. It is a figure showing the movement of an electric charge when only the distribution gate TXa is opened in the modulated light detection mode. It is a figure showing the change of the height of the potential of the pixel in high pixel imaging mode. It is a figure showing the movement of an electric charge when distribution gates TXa-TXd open in the high pixel imaging mode. It is a timing chart showing operation of an imaging device in modulated light detection mode. It is the schematic showing the outline of the process for a control part to calculate the value of the phase of the intensity | strength modulation light imaged in each pixel. It is a timing chart showing operation of an imaging device in high pixel imaging mode. It is a block diagram showing the structure of the pixel used for the light-receiving part of the imaging device of 2nd embodiment. It is a figure showing the equivalent circuit of the pixel of FIG. It is a figure showing the line of the section showing potential. It is a figure showing the change of the height of the potential of the pixel in modulated light detection mode. It is a figure showing the change of the height of the potential of the pixel in difference image imaging mode. It is a figure showing the change of the height of the potential of the pixel in high pixel imaging mode. It is a timing chart showing operation of an imaging device in modulated light detection mode. It is a timing chart showing operation of an imaging device in difference image imaging mode. It is a timing chart showing operation of an imaging device in high pixel imaging mode.

[First embodiment]
FIG. 1 is a schematic block diagram illustrating a functional configuration of the imaging apparatus 10 according to the first embodiment. The imaging device 10 includes a lens 11, a light receiving unit 12, and a control unit 13. The lens 11 passes the light beam reflected by the object (target object) to be imaged, and forms an image of the target object on the light receiving unit 12. The light receiving unit 12 has a structure in which a plurality of pixels are two-dimensionally arranged. The light receiving unit 12 generates and accumulates charges corresponding to the light received by the pixels, and outputs the accumulated charges to the control unit 13 at a predetermined timing. The control unit 13 inputs the electric charge accumulated in the light receiving unit 12 and generates electronic data of an image of the target object. And the control part 13 outputs the electronic data of the produced | generated image.

  FIG. 2 is a schematic diagram illustrating an outline of the configuration of the light receiving unit 12. The light receiving unit 12 includes a plurality of pixels 221, a vertical scanning circuit 222, a horizontal scanning circuit 223, and a reading circuit 224. The pixels 221 are arranged in a two-dimensional matrix. The pixel 221 receives the light that has passed through the lens 11 and generates and accumulates charges. The voltage level corresponding to the charge accumulated in each pixel 221 is read by the reading circuit 224 in accordance with control by the vertical scanning circuit 222 and the horizontal scanning circuit 223. Then, the voltage level read by the read circuit 224 is output to the control unit 13.

  FIG. 3 is a configuration diagram illustrating the configuration of the pixel 221 used in the light receiving unit 12. FIG. 3A is a configuration diagram illustrating the overall configuration of the pixel 221. The pixel 221 includes four micro conversion units PDa to PDd. Each micro-conversion part PDa-PDd is comprised using a photoelectric conversion element. The pixel 221 includes four charge storage regions 2212a to 2212d and distribution gates TXa to TXd corresponding to the charge storage regions 2212a to 2212d. The four micro conversion units PDa to PDd are connected to the charge storage regions 2212a to 2212d through the charge transfer region 2213 and the distribution gates TXa to TXd, respectively. Hereinafter, when the four distribution gates are described collectively, they are described as “distribution gate TX”.

  The potential of the potential is lower in the charge transfer region 2213 than in the micro conversion units PDa through PDd, and is lower in the charge storage regions 2212a through 2212d than in the charge transfer region 2213. The charges generated by the photoelectric conversion of the minute conversion units PDa to PDd move to the charge transfer region 2213 having a lower potential. When the distribution gates TXa to TXd are opened, charges move from the charge transfer region 2213 to the charge storage regions 2212a to 2212d corresponding to the opened gates TXa to TXd. The charges that have moved to the charge storage regions 2212a to 2212d are stored by the charge storage regions 2212a to 2212d until a predetermined timing. The accumulated charges are read from the read electrodes 2214a to 2214d to the control unit 13 via the read circuit 224 at a predetermined timing.

  The pixel 221 includes reset gates Ra to Rd (hereinafter referred to as “reset gate R” when referring to all reset gates) adjacent to the charge storage regions 2212a to 2212d and reset electrodes 2215a to 2215d. . When the reset gates Ra to Rd are opened, the charges accumulated in the charge accumulation regions 2212a to 2212d flow to the reset electrodes 2215a to 2215d, and the reset state is set. This reset process is simultaneously performed on all the charge accumulation regions 2212a to 2212d of all the pixels 221 of the light receiving unit 12.

  The pixel 221 includes a drain gate D and a drain electrode 2217 adjacent to the charge transfer region 2213. The drain electrode 2217 is connected to the charge transfer region 2213 through the drain gate D. When the drain gate D is opened, all charges existing in the charge transfer region 2213 flow to the drain electrode 2217 via the drain gate D. The charge that has flowed to the drain electrode 2217 is discarded. The drain electrode 2217 and the drain gate D may be provided in the central portion of the charge transfer region 2213 as shown in FIG. By being configured in this way, it becomes possible to move the charges evenly from the entire charge transfer region 2213 to the drain electrode 2217 regardless of the position of the charge existing in the charge transfer region 2213.

  The configuration of the pixel 221 will be described in more detail. The four micro conversion units PDa to PDd are provided approximately in the middle of the two charge storage regions 2212a to 2212d located in the vicinity. For example, the minute conversion unit PDa is provided approximately in the middle of the charge accumulation region 2212a and the charge accumulation region 2212d. The minute conversion unit PDb is provided approximately in the middle of the charge accumulation region 2212b and the charge accumulation region 2212a. The minute conversion unit PDc is provided approximately in the middle of the charge accumulation region 2212c and the charge accumulation region 2212b. The minute conversion unit PDd is provided approximately in the middle of the charge accumulation region 2212d and the charge accumulation region 2212c. The “intermediate” mentioned here may be determined based on, for example, the center of gravity of the charge storage region 2212 and the center of gravity of the micro-conversion unit PD, or may be determined based on another criterion. Further, the four minute conversion units PDa to PDd are connected to all the charge storage regions 2212a to 2212d through one charge transfer region 2213.

  The effect of having such a configuration will be described using the minute conversion unit PDa as an example. When the minute conversion part PDa is provided so as to be biased toward the charge accumulation region 2212a, the distance between the minute conversion part PDa and the charge accumulation region 2212d becomes longer than the distance between the minute conversion part PDa and the charge accumulation region 2212a. In this state, when the distribution gate TXa is open and the distribution gate TXd is closed, the amount of charge that moves from the minute conversion unit PDa to the charge storage region 2212a, and when the distribution gate TXa is closed and the distribution gate TXd is open In other words, there is a difference in the amount of charge that moves from the minute conversion portion PDa to the charge accumulation region 2212d. Such a problem can be solved by providing the micro-conversion unit PDa approximately in the middle between the charge accumulation region 2212a and the charge accumulation region 2212d.

  However, in such a configuration, there is a problem that each of the micro conversion units PDa to PDd cannot be operated as individual pixels. That is, the charges generated by the minute conversion unit PD are distributed and accumulated in a plurality of charge accumulation regions 2212 located in the vicinity of the minute conversion unit PD. In order to operate each of the micro conversion units PDa to PDd as individual pixels, it is necessary to store the charge generated in one micro conversion unit PD in one charge storage region 2212.

  In order to solve such a problem, the pixel 221 is configured as follows. The pixel 221 is configured so that the charges generated in each of the minute conversion units PDa to PDd can easily move to one charge storage region 2212a to 2212d corresponding to each of the minute conversion units PDa to PDd. For example, the pixel 221 is configured so that the charge generated in the minute conversion unit PDa can move to the charge storage region 2212a more easily than the other charge storage regions 2212b to 2212d.

  Such a configuration is realized as follows. A convex portion 2200 is provided in each sorting gate TXa and each charge accumulation region 2212a to 2212d. The convex portions 2200 of the charge accumulation regions 2212a to 2212d are provided on the side where the minute conversion portions PDa to PDd corresponding to the charge accumulation regions 2212a to 2212d are located. For example, the convex portion 2200 of the charge storage region 2212d is provided on the minute conversion unit PDd side and is not provided on the minute conversion unit PDa. Therefore, the charge storage regions 2212a to 2212d and the distribution gates TXa to TXd are configured in an asymmetric shape.

  3B and 3C are diagrams showing the potential of the potential around the convex portion 2200 (part of the cutting line X-X ′ shown in FIG. 3A). FIG. 3B shows the potential of the potential when the sorting gate TXc is closed. FIG. 3C shows the potential of the potential when the sorting gate TXc is open. 3B and 3C illustrate the periphery of the convex portion 2200 of the sorting gate TXc as a representative, but the potential potentials around the convex portions 2200 of the other sorting gates TXa, TXb, and TXd are the same.

  The pixel 221 configured in this manner operates as follows with all the distribution gates TXa to TXd open. The charges generated in the minute conversion units PDa to PDd move to the charge transfer region 2213 having a lower potential. Most of the charges that have moved to the charge transfer region 2213 move to the convex portions 2200 of the charge storage regions 2212a to 2212d that are located closest to each other among the charge storage regions 2212a to 2212d having lower potential. For example, the charge generated in the minute conversion part PDa moves to the convex part 2200 of the charge accumulation region 2212a via the convex part 2200 of the sorting gate TXa. Therefore, most of the charge generated in the minute conversion unit PDa is accumulated in the charge accumulation region 2212a.

  FIG. 4 is a diagram illustrating an equivalent circuit of the pixel 221 in FIG. In FIG. 4, the minute conversion units PDa to PDd are represented as pairs of photodiodes and capacitors C0a to C0d. Charge storage regions 2212a to 2212d adjacent to the distribution gates TXa to TXd, respectively, are represented as capacitors Ca to Cd. The capacitors Ca to Cd are charged with the voltage V when the FET transistors of the reset gates Ra to Rd are turned on. This operation is the reset process described above. The reset process is a process for returning the state of the charge accumulation regions 2212a to 2212d to a state (initial state) before accumulating the charges generated by the micro conversion units PDa to PDd.

  The FET transistors La to Ld are level shift transistors. When the read gates Ta to Td are opened, the FET transistors La to Ld send out currents corresponding to the charges held in the capacitors Ca to Cd to the control unit 13 via the read circuit 224, respectively. Note that the four micro conversion units PDa to PDd and the charge transfer region 2213 can be formed by an integral N-type region embedded in a P-type region (P-well). A light-shielding curtain (light-shielding mask) is provided above the integral N-type region, and is configured such that light enters only the micro-conversion units PDa to PDd among the components of the pixel 221.

  The imaging device 10 has a plurality of operation patterns. For example, there are a modulated light detection mode, a differential image imaging mode, and a high pixel imaging mode. Hereinafter, the change in the potential of the pixel 221 and the movement of electric charge in the first embodiment will be described for each operation pattern. However, in the first embodiment, since there is no operation in the differential image capturing mode, the modulated light detection mode and the high pixel imaging mode will be described. FIG. 5 is a diagram illustrating a cross-sectional line representing a potential. The potential height along the broken line from A to B in FIG. 5 is represented in FIGS. 6 and 8.

  FIG. 6 is a diagram illustrating a change in potential height of the pixel 221 in the modulated light detection mode. FIG. 6A represents the potential when no operation is applied to the circuit.

FIG. 6B represents the potential at reset. At reset, all reset gates, all sort gates TX, and drain gates D are opened. The charges accumulated in the charge accumulation region 2212a pass through the reset gate Ra and flow to the reset electrode 2215a. In addition, charges generated in the minute conversion portion PDa and charges remaining in the charge transfer region 2213 also flow to the reset electrode 2215a or the drain electrode 2217. Through the above operation, the pixel 221 is reset. Further, as shown in FIG. 6B, in the state where both the distribution gate TXa and the distribution gate TXb are open, the potential from the minute conversion unit PDa to the charge transfer region 2213 has a steep gradient on the distribution gate TXa side. Is formed. For this reason, most of the charge generated in the minute conversion part PDa moves to the sorting gate TXa side (corresponding to the sorting gate TX side).
FIG. 6C shows the potential when only the sorting gate TXa is open. FIG. 7 is a diagram illustrating the movement of charges when only the sorting gate TXa is opened in the modulated light detection mode. When only the distribution gate TXa is opened, the charge generated in the minute conversion unit PDa passes through the distribution gate TXa and is accumulated in the charge accumulation region 2212a. Further, as illustrated in FIG. 7, the charges generated in the minute conversion units PDb to PDd also pass through the sorting gate TXa and are accumulated in the charge accumulation region 2212a.

FIG. 6D shows the potential with only the drain gate D open. In this case, the charge generated in the minute conversion part PDa and the charge remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.
FIG. 6E shows the potential when only the sorting gate TXd is open. In this case, the charge generated in the minute conversion unit PDa passes through the distribution gate TXd and is accumulated in the charge accumulation region 2212d. As described above, the charge generated in the minute conversion part PDa easily moves to the charge accumulation region 2212a. However, in the state of FIG. 6E, the sorting gate TXa is closed and only the sorting gate TXd is open. In this state, the charges generated in each charge accumulation region 2212a also move to the charge accumulation region 2212d via the charge transfer region 2213 and the sorting gate TXd.

  FIG. 8 is a diagram illustrating a change in potential height of the pixel 221 in the high pixel imaging mode. The states shown in FIGS. 8A and 8B are the same as the states shown in FIGS. 6A and 6B, respectively. FIG. 8C shows the potential with all the distribution gates TXa to TXd open. FIG. 9 is a diagram illustrating the movement of charges when the sorting gates TXa to TXd are opened in the high pixel imaging mode. When the distribution gates TXa to TXd are opened, most of the charges generated in the minute conversion unit PDa pass through the distribution gate TXa and are accumulated in the charge accumulation region 2212a. In addition, most of the charges generated in the micro conversion unit PDd (not shown) pass through the sorting gate TXd and are accumulated in the charge accumulation region 2212d. Further, as illustrated in FIG. 9, the charge generated in the minute conversion unit PDb passes through the distribution gate TXb and is accumulated in the charge accumulation region 2212b, and the charge generated in the minute conversion unit PDc passes through the distribution gate TXc. Passes and accumulates in the charge accumulation region 2212c.

  Next, the operation flow of the imaging device 10 in the first embodiment will be described for each operation pattern. FIG. 10 is a timing chart illustrating the operation of the imaging apparatus 10 in the modulated light detection mode. First, when the control unit 13 outputs a reset signal at the start of imaging, the pixel 221 opens the reset gates Ra to Rd, the four sorting gates TXa to TXd, and the drain gate D (t1). By this operation, the charge transfer region 2213 and the charge storage regions 2212a to 2212d are reset.

  Next, under the control of the control unit 13, all the reset gates Ra to Rd are closed, the distribution gates TXb to TXd are closed, and the distribution gate TXa is opened (t2). While the distribution gate TXa is open, charges generated in the micro conversion units PDa to PDd are accumulated in the charge accumulation region 2212a. At this time, as described above, the charges generated in the minute conversion units PDb to PDd are likely to move to the corresponding charge accumulation regions 2212b to 2212d. However, the distribution gates TXb to TXd are closed. Therefore, the charges generated in the charge accumulation regions 2212b to 2212d also move to the charge accumulation region 2212a.

  Next, under the control of the control unit 13, the distribution gate TXa is closed and the drain gate D is opened (t3). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Next, under the control of the control unit 13, the drain gate D is closed and the distribution gate TXb is opened (t4). While the distribution gate TXb is open, charges generated in the minute conversion units PDa to PDd are accumulated in the charge accumulation region 2212b. The reason why the charges generated in the minute conversion portions PDa, PDc, and PDd also move to the charge accumulation region 2212b is the same as when the sorting gate TXa is opened.

  Next, under the control of the control unit 13, the distribution gate TXb is closed and the drain gate D is opened (t5). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Next, under the control of the control unit 13, the drain gate D is closed and the distribution gate TXc is opened (t6). While the distribution gate TXc is open, charges generated in the minute conversion units PDa to PDd are accumulated in the charge accumulation region 2212c. The reason why the charges generated in the minute conversion parts PDa, PDb, and PDd also move to the charge accumulation region 2212c is the same as when the sorting gate TXa is opened.

  Next, under the control of the control unit 13, the distribution gate TXc is closed and the drain gate D is opened (t7). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Next, under the control of the control unit 13, the drain gate D is closed and the distribution gate TXd is opened (t8). While the distribution gate TXd is open, charges generated in the minute conversion units PDa to PDd are accumulated in the charge accumulation region 2212d. The reason why the charges generated in the minute conversion units PDa to PDc also move to the charge storage region 2212d is the same as when the sorting gate TXa is opened.

  Next, under the control of the control unit 13, the distribution gate TXd is closed and the drain gate D is opened (t9). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Thus, the first exposure is completed (t10). Thereafter, the opening / closing process of the sorting gates TXa to TXd and the drain gate D is repeatedly executed until a predetermined number of times (n times) of exposure are completed. The reset gate R is not opened until a predetermined number of exposures are completed. When the predetermined number of exposures are completed (t11), the read gates Ta to Td are opened under the control of the control unit 13. The voltages of the capacitors Ca to Cd are applied to the gates of the level shift transistors La to Ld. Therefore, when the read gates Ta to Td are opened, a current corresponding to the voltage level of each capacitor flows through the read electrode 2214a to the read electrode 2214d. The current flowing through the readout electrode 2214 flows to the control unit 13 via the readout circuit 224. The control unit 13 detects the phase of the imaged intensity modulated light using the read current.

FIG. 11 is a schematic diagram illustrating an outline of a process for the control unit 13 to calculate the phase value of the intensity-modulated light imaged in each pixel 221. The waveform shown in FIG. 11 is a waveform showing the change over time of the luminance value of the intensity-modulated light incident on a certain pixel 221. C (θ ₀ ), C (θ ₁ ), C (θ ₂ ), and C (θ ₃ ) represent potential values at the timing when the charge accumulation regions 2212 a to 2212 d accumulate charges. That is, under the control of the control unit 13, the time of one exposure becomes the same as the period of the intensity modulated light. Further, the timing at which each of the sorting gates TXa to TXd control unit 13 opens by the control of the control unit 13 is shifted by a time that is ¼ of the period of the intensity-modulated light. The control unit 13 stores in advance the period of the intensity-modulated light to be imaged and the timings at which the distribution gates TXa to TXd are opened. The control unit 13 substitutes C (θ ₀ ), C (θ ₁ ), C (θ ₂ ), and C (θ ₃ ) into Equation 1 to thereby change the amplitudes R and B of the intensity-modulated light in each pixel 221. Calculate the value.

Next, the control unit 13 substitutes the values of R and B calculated by C (θ ₀ ), C (θ ₁ ), C (θ ₂ ), C (θ ₃ ), and Equation 1 into Equation 2. Thus, the phase θ of the intensity modulated light in each pixel 221 is calculated.

  FIG. 12 is a timing chart showing the operation of the imaging apparatus 10 in the high pixel imaging mode. First, when the control unit 13 outputs a reset signal at the start of imaging, the pixel 221 opens the reset gates Ra to Rd, the four sorting gates TXa to TXd, and the drain gate D (t41). By this operation, the charge transfer region 2213 and the charge storage regions 2212a to 2212d are reset.

  Next, under the control of the control unit 13, all the reset gates Ra to Rd and the drain gate D are closed, and all the distribution gates TXa to TXd are opened (t42). As described above, the charges generated in the micro conversion units PDa to PDd are likely to move to the corresponding charge storage regions 2212a to 2212d. For this reason, while the distribution gates TXa to TXd are open, the charges generated in the minute conversion units PDa to PDd are accumulated in the charge accumulation regions 2212a to 2212d corresponding thereto.

  When a predetermined exposure time elapses, the distribution gates TXa to TXd are closed and the read gates Ta to Td are opened (t47) according to the control of the control unit 13. In response to opening of the read gates Ta to Td, a current corresponding to the voltage level of the capacitors in the charge storage regions 2212a to 2212d flows through the read electrodes 2214a to 2214d. The current flowing through the readout electrode 2214 flows to the control unit 13 via the readout circuit 224. The control unit 13 generates a high pixel image using the read current. The high pixel image is an image in which each of the minute conversion units PDa to PDd included in the pixel 221 is a single pixel. Therefore, an image having a pixel number four times the number of the pixels 221 is generated as the high pixel image.

  In the imaging device 10 according to the first embodiment configured as described above, the charge generated in the minute conversion units PDa to PDd of the pixel 221 is appropriately changed according to the open / closed states of the distribution gates TXa to TXd. It becomes possible to move to ~ 2212d. For example, when only one distribution gate TX is opened at a time, the charges generated by the micro conversion units PDa to PDd move to the charge storage region 2212 via the open distribution gate TX. One reason why such an effect can be obtained is that the micro conversion units PDa to PDd and the distribution gates TXa to TXd are connected through a common charge transfer region 2213. Another reason is that the four micro conversion units PDa to PDd are provided approximately in the middle of the two charge storage regions 2212a to 2212d located in the vicinity.

  For example, when all the distribution gates TXa to TXd are open, the charges generated by the micro conversion units PDa to PDd move to the corresponding charge accumulation regions 2212a to 2212d, respectively. Therefore, it is possible to accumulate charges generated by the minute conversion units PDa to PDd with high accuracy. Therefore, it is possible to generate a high-pixel image in which each of the minute conversion units PDa to PDd is one pixel.

  Further, the provision of the drain gate D and the drain electrode 2217 has the following effects. Charges generated during the period from when one sort gate TXa to TXd is closed until the next sort gate TXa to TXd is opened are discarded by the drain electrode 2217. Therefore, when the distribution gates TXa to TXd are opened, it is possible to prevent the charge generated after the previous distribution gates TXa to TXd are closed from moving to the charge accumulation regions 2212a to 2212d. Therefore, it is possible to make the amount of charge stored at each charge storage timing accurate.

<Modification>
A configuration in which the charges generated in each of the minute conversion units PDa to PDd easily move to one charge storage region 2212a to 2212d corresponding to each of the minute conversion units PDa to PDd may be realized as follows. For example, it may be realized by adjusting the potential of the charge transfer region 2213 by ion implantation or the like. For example, the potential of the charge transfer region 2213 located in the vicinity of the minute conversion unit PDa may be adjusted so as to be inclined so as to decrease toward the charge storage region 2212a. Similarly, the potential of the charge transfer region 2213 located in the vicinity of each of the micro conversion units PDa to PDd may be adjusted so as to be inclined to the corresponding charge storage region 2212 side.

  The read circuit 224 may be configured to output each current to the control unit 13 without taking the difference between the current flowing through the read electrode 2214a and the current flowing through the read electrode 2214b. In this case, the control unit 13 generates two images corresponding to the respective currents. The control unit 13 may generate a difference image between the two images after generating the two images.

The three operation patterns described above are merely examples. Therefore, control may be performed so that the imaging apparatus 10 operates in another operation pattern.
The time during which the distribution gates TXa to TXd are open may be set as appropriate. This time is, for example, 100 milliseconds or less, preferably 1 millisecond or less, and more preferably 100 microseconds or less.
The pixel 221 may be configured not to include the reset gate R and the reset electrodes 2215a to 2215d. The pixel 221 may be configured not to include the drain gate D and the drain electrode 2217. The number of micro conversion units PD provided in the pixel 221 is not necessarily limited to four, and may be two or three, or may be five or more. In that case, each minute conversion unit PD is provided with a corresponding charge accumulation region 2212 and a distribution gate TX.

  In the modulated light detection mode described above, the control unit 13 detects the phase of the intensity-modulated light based on the four luminance values, but may detect the phase of the intensity-modulated light based on the three luminance values. In this case, the control unit 13 opens and closes three sorting gates TX among the four sorting gates TXa to TXd. For example, description will be made assuming that the distribution gates TXa to TXc are opened and closed.

In the following description, C (θ ₀ ), C (θ ₁ ), and C (θ ₂ ) represent potential values at the timing at which the charge accumulation regions 2212 a to 2212 c accumulate charges. That is, under the control of the control unit 13, the time of one exposure becomes the same as the period of the intensity modulated light. Also, the timing at which each of the sorting gates TXa to TXc control unit 13 opens by the control of the control unit 13 is shifted by 1/3 of the period of the intensity modulated light. The control unit 13 stores in advance the period of the intensity-modulated light to be imaged and the timing at which the distribution gates TXa to TXc are opened. The control unit 13 calculates the values of the amplitudes R and B of the intensity-modulated light by substituting C (θ ₀ ), C (θ ₁ ), and C (θ ₂ ) into Equation 3.

Then, the control unit 13 substitutes the values of R and B calculated in C (θ ₀ ), C (θ ₁ ), C (θ ₂ ), and Equation 3 into Equation 4 to obtain the intensity at each pixel 221. The phase θ of the modulated light is calculated.

[Second Embodiment]
FIG. 13 is a configuration diagram illustrating a configuration of the pixel 221-2 used in the light receiving unit 12 of the imaging device 10 according to the second embodiment. In addition, the structure of the imaging device 10 and the light-receiving part 12 of 2nd embodiment is the same as 1st embodiment. However, the process of the control unit 13 is different between the first embodiment and the second embodiment. Therefore, about the control part 13, only a different part from 1st embodiment is demonstrated below.

  The pixel 221-2 includes a separation gate Sa-d, a separation gate Sd-c, a separation gate Sc-b, and a separation gate Sb-a. Hereinafter, when the four isolation gates are collectively described, they are referred to as “isolation gate S”. The pixel 221-2 includes the four separation gates S, thereby enabling the micro conversion units PDa to PDd to operate as individual pixels. Specifically, when the charges generated by the micro conversion units PDa to PDd are distributed to all the charge storage regions 2212a to 2212d, all the separation gates S are opened. On the other hand, when the charges generated in the respective micro conversion units PDa to PDd are stored only in the corresponding charge storage regions 2212a to 2212d, all the separation gates S are closed.

FIG. 14 is a diagram illustrating an equivalent circuit of the pixel 221-2 in FIG. The main difference between the equivalent circuit of the pixel 221-2 in the second embodiment and the equivalent circuit of the pixel 221 in the first embodiment is that four separation gates S are provided.
Next, changes in the potential of the pixel 221-2 and the movement of charges in the second embodiment will be described for each operation pattern. FIG. 15 is a diagram illustrating a cross-sectional line representing a potential. The height of the potential along the broken line from C to D in FIG. 15 is represented in FIGS.

  FIG. 16 is a diagram illustrating a change in potential height of the pixel 221-2 in the modulated light detection mode. FIG. 16A represents the potential when no operation is applied to the circuit. FIG. 16B represents the potential at reset. At reset, all reset gates, all sort gates TX, and drain gates D are opened. The charges accumulated in the charge accumulation region 2212a pass through the reset gate Ra and flow to the reset electrode 2215a. In addition, charges generated in the minute conversion portion PDa and charges remaining in the charge transfer region 2213 also flow to the reset electrode 2215a or the drain electrode 2217. Through the above operation, the pixel 221-2 is reset. In FIG. 16B, all the isolation gates S are also opened, but it is not essential to open the isolation gates S.

FIG. 16C shows the potential in a state where all the separation gates S and the distribution gates TXa are open. In this case, the charge generated in the minute conversion unit PDa passes through the sorting gate TXa and is accumulated in the charge accumulation region 2212a.
FIG. 16D represents the potential with only the drain gate D open. In this case, the charge generated in the minute conversion part PDa and the charge remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217. In FIG. 16D, all the isolation gates S are also opened, but opening the isolation gates S is not essential.
FIG. 16E shows the potential with all the separation gates S and the distribution gates TXd open. In this case, the charge generated in the minute conversion unit PDa passes through the distribution gate TXd and is accumulated in the charge accumulation region 2212d.

  FIG. 17 is a diagram illustrating a change in potential height of the pixel 221-2 in the differential image capturing mode. The states shown in FIGS. 17A to 17D are the same as the states shown in FIGS. 16A to 16D, respectively. FIG. 17E shows the potential when all the separation gates S and the distribution gates TXd are open. In this case, the charge generated in the minute conversion unit PDa passes through the distribution gate TXd and is accumulated in the charge accumulation region 2212d.

  FIG. 18 is a diagram illustrating a change in potential height of the pixel 221-2 in the high pixel imaging mode. The state shown in FIG. 18A is the same as the state shown in FIG. 16A. FIG. 18B represents the potential at reset. At reset, all isolation gates S are closed and all other gates are opened. The charges accumulated in the charge accumulation region 2212a pass through the reset gate Ra and flow to the reset electrode 2215a. In addition, charges generated in the minute conversion portion PDa and charges remaining in the charge transfer region 2213 also flow to the reset electrode 2215a or the drain electrode 2217. Through the above operation, the pixel 221-2 is reset.

  FIG. 18C shows the potential in a state where all the separation gates S are closed and all the distribution gates TXa to TXd are opened. In this case, the charge generated in the minute conversion unit PDa passes through the sorting gate TXa and is accumulated in the charge accumulation region 2212a. At this time, since the separation gate Sa-d is closed, the charge generated in the minute conversion unit PDa does not pass through the sorting gates TXb to TXd. For the same reason, the charges generated in the minute conversion parts PDb to PDd do not pass through the sorting gate TXa. Further, the charges generated in the micro conversion unit PDd (not shown) pass through the sorting gate TXd and are accumulated in the charge accumulation region 2212d.

  Next, the operation flow of the imaging device 10 in the second embodiment will be described for each operation pattern. FIG. 19 is a timing chart illustrating the operation of the imaging apparatus 10 in the modulated light detection mode. First, when the control unit 13 outputs a reset signal at the start of imaging, the pixel 221-2 opens the reset gates Ra to Rd, the four distribution gates TXa to TXd, the drain gate D, and the four separation gates S (t51). By this operation, the charge transfer region 2213 and the charge storage regions 2212a to 2212d are reset.

  Next, under the control of the control unit 13, all the reset gates Ra to Rd are closed, all the separation gates S are opened, the distribution gates TXb to TXd are closed, and the distribution gate TXa is opened (t52). Since all the separation gates S are open while the distribution gate TXa is open, the charges generated in the minute conversion units PDa to PDd are accumulated in the charge accumulation region 2212a.

Next, under the control of the control unit 13, the distribution gate TXa is closed and the drain gate D is opened (t53). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.
Next, under the control of the control unit 13, the drain gate D is closed and the distribution gate TXb is opened (t54). Since all the separation gates S are open while the distribution gate TXb is open, the charges generated in the micro conversion units PDa to PDd are stored in the charge storage region 2212b.

  Next, under the control of the control unit 13, the distribution gate TXb is closed and the drain gate D is opened (t55). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Next, under the control of the control unit 13, the drain gate D is closed and the distribution gate TXc is opened (t56). Since all the separation gates S are open while the distribution gate TXc is open, the charges generated in the micro conversion units PDa to PDd are stored in the charge storage region 2212c.

  Next, under the control of the control unit 13, the distribution gate TXc is closed and the drain gate D is opened (t57). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Next, under the control of the control unit 13, the drain gate D is closed and the distribution gate TXd is opened (t58). Since all the separation gates S are open while the distribution gate TXd is open, the charges generated in the minute conversion units PDa to PDd are accumulated in the charge accumulation region 2212d.

  Next, under the control of the control unit 13, the distribution gate TXd is closed and the drain gate D is opened (t59). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Thus, the first exposure is completed (t60). Thereafter, the opening / closing process of the sorting gates TXa to TXd and the drain gate D is repeatedly executed until a predetermined number of times (n times) of exposure are completed. The reset gate R is not opened until a predetermined number of exposures are completed. When the predetermined number of exposures are completed (t61), the read gates Ta to Td are opened according to the control of the control unit 13. The voltages of the capacitors Ca to Cd are applied to the gates of the level shift transistors La to Ld. Therefore, when the read gates Ta to Td are opened, a current corresponding to the voltage level of each capacitor flows through the read electrode 2214a to the read electrode 2214d. The current flowing through the readout electrode 2214 flows to the control unit 13 via the readout circuit 224. The control unit 13 detects the phase of the imaged intensity modulated light using the read current. The detection process of the phase of the intensity modulated light is the same as the detection process in the first embodiment.

  FIG. 20 is a timing chart illustrating the operation of the imaging apparatus 10 in the difference image capturing mode. First, when the control unit 13 outputs a reset signal at the start of imaging, the pixel 221-2 opens the reset gates Ra to Rd, the four distribution gates TXa to TXd, the drain gate D, and the four separation gates S (t71). By this operation, the charge transfer region 2213 and the charge storage regions 2212a to 2212d are reset.

  Next, under the control of the control unit 13, all the reset gates Ra to Rd are closed, the separation gates Sb-a and Sb-c are opened, the separation gates Sb-b and Sb-d are closed, and the distribution gates TXb and TXd are closed. Is closed and the sorting gates TXa and TXc are opened (t72). Since the separation gates Sb-b and Sb-d are also open while the distribution gates TXa and TXc are open, the charges generated in the micro conversion units PDa and PDb are stored in the charge storage region 2212a, and the micro conversion units PDc and Charges generated by PDd are accumulated in the charge accumulation region 2212c.

  Next, under the control of the control unit 13, the distribution gates TXa and TXc are closed and the drain gate D is opened (t73). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Next, under the control of the control unit 13, the drain gate D is closed, and the distribution gates TXb and TXd are opened (t74). Since the separation gates Sb-b and Sb-d are also open while the distribution gates TXb and TXd are open, the charges generated in the micro conversion units PDa and PDb are stored in the charge storage region 2212b, and the micro conversion units PDc and The charges generated in PDd are accumulated in the charge accumulation region 2212d.

  Next, under the control of the control unit 13, the distribution gates TXb and TXd are closed and the drain gate D is opened (t75). When the drain gate D is opened, the charges generated in all the minute conversion units PDa to PDd and the charges remaining in the charge transfer region 2213 flow through the drain gate D to the drain electrode 2217.

  Thus, the first exposure is completed (t76). Thereafter, the opening / closing process of the sorting gate TXa, the sorting gate TXb, and the drain gate D is repeatedly executed until a predetermined number of times (n times) of exposure are completed. The reset gate R is not opened until a predetermined number of exposures are completed. When the predetermined number of exposures is completed (t81), the read gate Ta and the read gate Tb are opened under the control of the control unit 13. In response to the opening of the read gate Ta and the read gate Tb, a current corresponding to the voltage level of the capacitor in the charge storage region 2212a and the charge storage region 2212b flows to the read electrode 2214a and the read electrode 2214b. The readout circuit 224 takes the difference between the current flowing through the readout electrode 2214a and the current flowing through the readout electrode 2214b, and outputs the difference to the control unit 13. The control unit 13 generates a difference image using the current output from the readout circuit 224.

  FIG. 21 is a timing chart showing the operation of the imaging apparatus 10 in the high pixel imaging mode. First, when the control unit 13 outputs a reset signal at the start of imaging, the pixel 221-2 opens the reset gates Ra to Rd, the four sorting gates TXa to TXd, the drain gate D, and the four separation gates S (t91). By this operation, the charge transfer region 2213 and the charge storage regions 2212a to 2212d are reset.

  Next, under the control of the control unit 13, all the reset gates Ra to Rd, the drain gate D, and all the separation gates S are closed, and all the distribution gates TXa to TXd are opened (t92). Since all the separation gates S are closed, the charges generated in the minute conversion units PDa to PDd move to the corresponding charge accumulation regions 2212a to 2212d. For this reason, while the distribution gates TXa to TXd are open, the charges generated in the minute conversion units PDa to PDd are accumulated in the charge accumulation regions 2212a to 2212d corresponding thereto.

  When a predetermined exposure time elapses, the distribution gates TXa to TXd are closed and the read gates Ta to Td are opened (t97) according to the control of the control unit 13. In response to opening of the read gates Ta to Td, a current corresponding to the voltage level of the capacitors in the charge storage regions 2212a to 2212d flows through the read electrodes 2214a to 2214d. The current flowing through the readout electrode 2214 flows to the control unit 13 via the readout circuit 224. The control unit 13 generates a high pixel image using the read current.

  In the imaging device 10 according to the second embodiment configured as described above, charges generated by the minute conversion units PDa to PDd of the pixel 221-2 are appropriately stored according to the open / close states of the distribution gates TXa to TXd. It becomes possible to move to the regions 2212a to 2212d. For example, when only one distribution gate TX is opened at a time, the charges generated by the micro conversion units PDa to PDd move to the charge storage region 2212 via the open distribution gate TX. One reason why such an effect can be obtained is that the micro conversion units PDa to PDd and the distribution gates TXa to TXd are connected through a common charge transfer region 2213. Another reason is that the four micro conversion units PDa to PDd are provided approximately in the middle of the two charge storage regions 2212a to 2212d located in the vicinity.

Further, for example, when all the distribution gates TXa to TXd are open, the charges generated by the minute conversion units PDa to PDd are transferred to the corresponding charge accumulation regions 2212a to 2212d due to the presence of the four separation gates S. Move each one. Therefore, it is possible to accumulate charges generated by the minute conversion units PDa to PDd with high accuracy. Therefore, it is possible to generate a high-pixel image in which each of the minute conversion units PDa to PDd is one pixel.
Further, by providing the drain gate D and the drain electrode 2217, the same effect as that of the first embodiment can be obtained.

<Modification>
The operations of the four isolation gates S are not limited to those described above. For example, the charge storage may be performed with two adjacent isolation gates S closed and the remaining two isolation gates S open.
The embodiment of the present invention has been described in detail with reference to the drawings. However, the specific configuration is not limited to this embodiment, and includes designs and the like that do not depart from the gist of the present invention.

DESCRIPTION OF SYMBOLS 10 ... Imaging device, 11 ... Lens, 12 ... Light receiving part, 13 ... Control part, 221 ... Pixel (light receiving element), 222 ... Vertical scanning circuit, 223 ... Horizontal scanning circuit, 224 ... Reading circuit, PDa-PDd ... Micro conversion Unit (photoelectric conversion unit), 2212a to 2212d ... charge storage region (charge storage unit), 2213 ... charge transfer region (charge transfer unit), 2214a to 2214d ... readout electrode, 2215a to 2215d ... reset electrode, TXa to TXd ... distribution Gate, Ra to Rd ... Reset gate, D ... Drain gate, 2217 ... Drain electrode, 2200 ... Projection, Sa-d, Sb-a, Sc-b, Sd-c ... Separation gate

Claims (6)

A plurality of photoelectric conversion units that generate charges according to the exposure amount;
A plurality of charge storage units that store the charges generated from the photoelectric conversion unit;
A charge transfer unit that transfers the charge generated from the photoelectric conversion unit to the charge storage unit;
A plurality of distribution gates provided between the charge transfer unit and the charge storage unit, and controlling opening and closing of the charge transfer unit from the charge transfer unit to the charge storage unit;
With
The charge transfer unit is in contact with a plurality of photoelectric conversion units, a plurality of sorting gates, and a plurality of charge storage units,
The charge storage unit and the distribution gate unit have a convex portion in contact with the charge transfer unit with respect to a direction in which the photoelectric conversion unit corresponding to itself is located,
In the case of the first operation state, during the exposure, the distribution gate is opened so as not to overlap with other distribution gates,
In the case of the second operation state, during the exposure, the distribution gate opens overlapping with other distribution gates.
A light receiving element characterized by that. A plurality of photoelectric conversion units that generate charges according to the exposure amount;
A plurality of charge storage units that store the charges generated from the photoelectric conversion unit;
A charge transfer unit that transfers the charge generated from the photoelectric conversion unit to the charge storage unit;
A plurality of distribution gates provided between the charge transfer unit and the charge storage unit, and controlling opening and closing of the charge transfer unit from the charge transfer unit to the charge storage unit;
With
The charge transfer unit is in contact with a plurality of photoelectric conversion units, a plurality of sorting gates, and a plurality of charge storage units,
Either one or both of the photoelectric conversion unit and the charge transfer unit has a potential potential to move the charge generated by the photoelectric conversion unit to the charge storage unit corresponding to the photoelectric conversion unit. Have
In the case of the first operation state, during the exposure, the distribution gate is opened so as not to overlap with other distribution gates,
In the case of the second operation state, during the exposure, the distribution gate opens overlapping with other distribution gates.
A light receiving element characterized by that. A plurality of photoelectric conversion units that generate charges according to the exposure amount;
A plurality of charge storage units that store the charges generated from the photoelectric conversion unit;
A charge transfer unit that transfers the charge generated from the photoelectric conversion unit to the charge storage unit;
A plurality of distribution gates provided between the charge transfer unit and the charge storage unit, and controlling opening and closing of the charge transfer unit from the charge transfer unit to the charge storage unit;
A separation gate that is provided in the charge transfer unit and controls opening and closing of the charge storage unit that does not correspond to the photoelectric conversion unit from the photoelectric conversion unit;
With
The charge transfer unit is in contact with a plurality of photoelectric conversion units, a plurality of sorting gates, and a plurality of charge storage units,
In the first operating state, during the exposure, the distribution gate is opened so as not to overlap with other distribution gates, the separation gate is opened,
In the second operation state, during the exposure, the distribution gate opens overlapping with other distribution gates, and the separation gate closes.
A light receiving element characterized by that. A plurality of photoelectric conversion units that generate charges according to the amount of exposure, a plurality of charge storage units that store charges generated from the photoelectric conversion units, and a charge generated from the photoelectric conversion units to the charge storage unit A charge transfer unit that transfers, and a plurality of sorting gate units that are provided between the charge transfer unit and the charge storage unit and control opening and closing of the charge transfer unit from the charge transfer unit to the charge storage unit The charge transfer unit is in contact with a plurality of photoelectric conversion units, a plurality of distribution gates, and a plurality of charge storage units, and the charge storage unit and the distribution gate unit include the photoelectric conversion unit corresponding to itself. A method for controlling a light receiving element having a convex portion in contact with the charge transfer portion with respect to a direction in which it is located,
In the first operation state, the step of opening the sorting gate so as not to overlap with other sorting gates during exposure,
In the second operation state, the step of opening the sorting gate overlapping with other sorting gates during exposure,
A control method. A plurality of photoelectric conversion units that generate charges according to the amount of exposure, a plurality of charge storage units that store charges generated from the photoelectric conversion units, and a charge generated from the photoelectric conversion units to the charge storage unit A charge transfer unit that transfers, and a plurality of sorting gate units that are provided between the charge transfer unit and the charge storage unit and control opening and closing of the charge transfer unit from the charge transfer unit to the charge storage unit The charge transfer unit is in contact with the plurality of photoelectric conversion units, the plurality of sorting gates, and the plurality of charge storage units, and one or both of the photoelectric conversion unit and the charge transfer unit are A method of controlling a light receiving element having a potential potential such that the charge generated by the photoelectric conversion unit moves to the charge storage unit side corresponding to the conversion unit,
In the first operation state, the step of opening the sorting gate so as not to overlap with other sorting gates during exposure,
In the second operation state, the step of opening the sorting gate overlapping with other sorting gates during exposure,
A control method. A plurality of photoelectric conversion units that generate charges according to the amount of exposure, a plurality of charge storage units that store charges generated from the photoelectric conversion units, and a charge generated from the photoelectric conversion units to the charge storage unit A charge transfer unit that transfers, and a plurality of sorting gate units that are provided between the charge transfer unit and the charge storage unit and control opening and closing of the charge transfer unit from the charge transfer unit to the charge storage unit A separation gate that is provided in the charge transfer unit and controls opening and closing of the charge transfer unit from the photoelectric conversion unit to the charge storage unit that does not correspond to the photoelectric conversion unit, and the charge transfer unit Is in contact with a plurality of photoelectric conversion units, a plurality of sorting gates, and a plurality of charge storage units,
In the case of the first operation state, the exposure gate is opened so as not to overlap with other distribution gates during exposure, and the separation gate is opened.
In the case of the second operation state, the exposure gate is overlapped with the other distribution gates during exposure, and the separation gate is closed.
A control method.

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