JP2012109556A - Bump wire - Google Patents
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- JP2012109556A JP2012109556A JP2011232936A JP2011232936A JP2012109556A JP 2012109556 A JP2012109556 A JP 2012109556A JP 2011232936 A JP2011232936 A JP 2011232936A JP 2011232936 A JP2011232936 A JP 2011232936A JP 2012109556 A JP2012109556 A JP 2012109556A
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Abstract
Description
この発明は、IC、LSI、トランジスタ等の集積回路における半導体素子の電極上に、バンプを形成するためのバンプ用ワイヤに関するものである。 The present invention relates to a bump wire for forming a bump on an electrode of a semiconductor element in an integrated circuit such as an IC, LSI, or transistor.
半導体素子(チップ)の電極と外部端子を接続する場合、金線やその他の金属線で配線するワイヤボールボンディング法が一般的である(特許文献1 段落0003〜0005、図1参照)。
しかし、近年、半導体の小型化、薄型化、高性能化及び高信頼性の要求の高まる中、半導体チップの多ピン化及びこれに伴うファインピッチ化の傾向にあり、その傾向においても、接合の長期信頼性が要求される。このとき、上記ワイヤボールボンディング法の場合、ファインピッチ対応からワイヤのループ高さやボール径などの制約があり、半導体チップとして要求されるファインピッチ化による小型化に十分対応できない、という欠点がある。
When connecting an electrode of a semiconductor element (chip) and an external terminal, a wire ball bonding method of wiring with a gold wire or other metal wire is generally used (see
However, in recent years, with increasing demands for semiconductor miniaturization, thinning, high performance and high reliability, there has been a trend toward increasing the number of semiconductor chips and the accompanying fine pitch. Long-term reliability is required. At this time, the wire ball bonding method has a drawback that it can not cope with the miniaturization required by the fine pitch required as a semiconductor chip because there is a restriction such as a wire loop height and a ball diameter from the fine pitch correspondence.
一方、半導体チップの電極上や外部電極上にバンプと呼ばれる突起状の金属電極を形成し、その金属電極を介して半導体素子電極と外部電極を接続する方法がある。
このバンプによる接続は、まず、図1(a)のように、キャピラリー1から導出されたワイヤW先端を放電棒gでもって高電圧を掛けて放電し(スパークし)、溶融ボール2を形成した後、同図(b)のように、ICチップ(半導体チップ)3の電極4に溶融ボール2を圧接する。この圧接によって電極4上に溶融ボール2を接合した後、さらに同図(c)のように、キャピラリー1及びワイヤWを上方に引き上げることにより、ワイヤWを切断すると共に電極4上にバンプ5を形成する。この後、同図(d)のように、ICチップ3の電極4と基板7等の外部電極8をバンプ5及び半田6を介して接続する。
On the other hand, there is a method in which a protruding metal electrode called a bump is formed on an electrode of a semiconductor chip or an external electrode, and the semiconductor element electrode and the external electrode are connected through the metal electrode.
In connection with this bump, first, as shown in FIG. 1A, the tip of the wire W led out from the
そのバンプ用ワイヤとして、高純度Au(金)に、Pd(パラジウム)を0.2〜5.0重量%、Bi(ビスマス)を1〜100重量ppm、Ca(カルシウム)を3〜250重量ppmそれぞれ含有させて、上記ワイヤ切断時のテイル長さを安定して短くするとともに、接合強度を高めたものがある(特許文献2 請求項2)。
また,高純度Auに、Pdを1〜40wt(重量)%含有させると共に、Sc(スカンジウム)、Y(イットリウム)等の希土類元素の中から少なくとも1種を0.0001〜0.05wt%含有し、さらにBe(ベリリウム)、Ca、Ge(ゲルマニウム)、Ni(ニッケル)、Fe(鉄)、Co(コバルト)、Ag(銀)の中から1種以上を0.0001〜0.05wt%含有させて溶解鋳造し、次に溝ロール加工を施し、その途中で焼なまし処理を施した後に線引加工し、更に十分な応力除去を行って線径25μm母線からなるものがある(特許文献3 要約、段落0001参照)。
As the bump wire, high purity Au (gold), Pd (palladium) 0.2 to 5.0 wt%, Bi (bismuth) 1 to 100 ppm by weight, Ca (calcium) 3 to 250 ppm by weight. Each of them is included to stably shorten the length of the tail at the time of cutting the wire and increase the bonding strength (Patent Document 2).
In addition, Pd is contained in high purity Au in an amount of 1 to 40 wt (wt) and at least one of rare earth elements such as Sc (scandium) and Y (yttrium) is contained in an amount of 0.0001 to 0.05 wt%. Further, 0.0001 to 0.05 wt% of one or more of Be (beryllium), Ca, Ge (germanium), Ni (nickel), Fe (iron), Co (cobalt), and Ag (silver) is contained. Next, after performing melt casting and then performing groove roll processing, annealing is performed in the middle, drawing is performed, and sufficient stress is removed to form a 25 μm wire diameter (Patent Document 3). Summary, see paragraph 0001).
上記バンプ接続において、図1(a)の溶融ボール2を形成した際、図2(a)に示すように、その溶融ボール2からワイヤWには再結晶領域2a(同図において、溶融ボール2からワイヤWの破線までの領域)が生じ、図1(c)のワイヤWの切断時にはその再結晶領域2aでもってワイヤWは切断される。このため、この再結晶領域2aが長いと、図2(b)に示す、ワイヤ切断後のバンプ高さLが安定せず、均一なバンプ5を形成することができない。また、ワイヤWの先端(図1(c)における下端)と放電棒gとの距離が安定しないため、スパークエラーによるマシンストップが発生し、作業性が悪くなるといった不具合が発生する。
In the above bump connection, when the
この発明は、以上の実状の下、バンプ5の形状安定化を図るワイヤWを提供することを課題とする。
This invention makes it a subject to provide the wire W which aims at shape stabilization of the
上記課題を達成するため、この発明は、バンプ形成のための線径10〜50μmのバンプ用ワイヤWであって、Pdを0.2〜1.5重量%含有し、Ca、Ce、Ndのうち少なくとも1種以上を総和40〜120重量ppm含有し、残部が金及び不可避不純物からなる組成を有した構成を採用したものである。 In order to achieve the above object, the present invention provides a bump wire W having a wire diameter of 10 to 50 μm for bump formation, containing 0.2 to 1.5% by weight of Pd, Ca, Ce, and Nd. Among them, a configuration in which at least one or more of them are contained in a total of 40 to 120 ppm by weight and the balance is composed of gold and inevitable impurities is adopted.
Pdの添加は溶融ボール2作製時の再結晶領域が短くなり、バンプ高さLが短く安定化し、バンプ5の形状が安定するとともに、溶融ボール2と放電棒gとの距離が安定するためスパークエラーによるマシンストップが発生することなく連続でバンプ形成が可能となる。その含有量(添加量)は0.2〜1.5重量%とし、0.2重量%未満であると、前記効果が望めず、1.5重量%を超えると、溶融ボールが硬くなり過ぎて、接合時に十分な接合面積が得られず、また、Au−Al間で合金層の生成が不十分となるため、接合性が低下する。この低下を招くことなく安定して接合するためには高温、高荷重、高超音波出力で接合する必要があるが、それらを行うと、半導体素子の損傷等の不具合が発生する。さらに、ワイヤ自体の電気抵抗が増加するという問題点もある。好ましくは、0.5〜1.3重量%とする。
The addition of Pd shortens the recrystallization region at the time of manufacturing the
Pdのみによるバンプ高さLの短縮であると、そのバンプ高さを所要長さにするために、Pdの添加量が多くなって、上記接合性の低下、半導体素子の損傷、ワイヤ自体の電気抵抗の増加等の不具合が発生するが、これらのCe、Nd、Caの微量添加元素を、Pdと併用して添加することにより、それらの障害が生じることなく、ワイヤWの耐熱性が高くなって、スパーク時のエネルギーで生じる再結晶領域が短くなる。このため、所要の短いバンプ高さLを得ることができて、バンプ5の形状が安定する。
これらの効果を得るために、このCe、Nd、Caの含有量(添加量)は少なくとも1種以上を総和40〜120重量ppmとする。40重量ppm未満では、バンプ高さLが長くなる等の前記効果が望めず、120重量ppmを超えると、溶融ボール2の形状がいびつになったり、溶融ボール2やワイヤ表面に添加元素が析出して酸化膜となることにより接合性が低下する、また溶融ボール2が硬過ぎて半導体素子の損傷が発生する、さらに圧着ボール(バンプ)5の形状が安定しない等の問題が生じる。好ましくは総和50〜100重量ppmとする。
If the bump height L is shortened only by Pd, the amount of Pd added increases in order to make the bump height a required length, resulting in a decrease in the bonding property, damage to the semiconductor element, and the electrical power of the wire itself. Problems such as an increase in resistance occur, but adding these trace elements of Ce, Nd, and Ca in combination with Pd increases the heat resistance of the wire W without causing these obstacles. Thus, the recrystallization region generated by the energy at the time of spark is shortened. For this reason, the required short bump height L can be obtained, and the shape of the
In order to obtain these effects, the total content (addition amount) of Ce, Nd, and Ca is 40 to 120 ppm by weight. If it is less than 40 ppm by weight, the above effects such as an increase in the bump height L cannot be expected. If it exceeds 120 ppm by weight, the shape of the
このワイヤWの線径は10〜50μmとする。50μm以下としたのは、溶融ボール2をより小さくできるからであり、10μm以上としたのは、10μm未満ではオペレータがワイヤWをキャピラリー1に通すのが困難になり、作業性が悪くなるうえに、空気圧によりワイヤWに十分な張力をかけることができなくなり、ワイヤ切断や制御が困難になるからである。
The wire W has a wire diameter of 10 to 50 μm. The reason why the thickness is set to 50 μm or less is that the
なお、特許文献2記載技術は、高純度Auに、Pd、Caを添加したバンプ用ワイヤであるが、Biを添加しており、この発明とは異なる組成のワイヤである。
また、特許文献3段落0008第1〜5行には、希土類元素を添加すると、溶融ボール形成時の再結晶領域2aを短くできる旨の記載があるが、この再結晶領域2aを短くできることによる作用効果は「ボンディングの際のループ高さが低くなる。」(同段落第4〜5行)点であって、この発明のバンプ5のバンプ高さLを短く、かつ安定化するためではない。
The technique described in
Further, in
この発明は、以上のように、Pdを適量含有し、さらにCa、Ce、Ndのうち少なくとも1種以上を適量含有したワイヤとしたので、バンプ高さLが短く安定化し、バンプ5の形状が安定するとともに、溶融ボール2と放電棒gとの距離が安定するためスパークエラーによるマシンストップが発生することなく連続でバンプ形成が可能となる。
As described above, the present invention is a wire containing an appropriate amount of Pd and further containing an appropriate amount of at least one of Ca, Ce, and Nd. Therefore, the bump height L is shortened and the shape of the
「実施例」
金純度が99.99重量%以上の高純度金を用いて、表1に示す化学成分の金合金を鋳造し、8mmφのワイヤロッドを作製した。そのワイヤロッドを伸線加工し最終線径を25μmの金合金線とし、窒素雰囲気中400〜600℃で焼鈍した。化学成分の定量はICP−OES(高周波誘導結合プラズマ発光分光分析法)により行った。そのバンプ用ワイヤWとして、実施例1〜28、比較例1〜4を得た。
"Example"
A gold alloy having a chemical composition shown in Table 1 was cast using high-purity gold having a gold purity of 99.99% by weight or more to produce an 8 mmφ wire rod. The wire rod was drawn into a gold alloy wire having a final wire diameter of 25 μm and annealed at 400 to 600 ° C. in a nitrogen atmosphere. Quantification of the chemical components was performed by ICP-OES (High Frequency Inductively Coupled Plasma Emission Spectroscopy). Examples 1 to 28 and Comparative Examples 1 to 4 were obtained as the bump wires W.
この各実施例及び各比較例に対し、下記の試験を行い、その結果を表2に示す。
『試験方法』
[接合条件]:
接合には市販のボンダーを使用し、溶融ボール(直径50μm)2を作製し(図1(a)参照)、ステージ温度150℃にて、アルミニウム電極4にバンプ5を形成した(図1(b)、(c)参照)。
「圧着ボール(バンプ5)形状」:
上記接合条件で形成したバンプ5の形状を光学顕微鏡および走査型電子顕微鏡(SEM)で観察した。観察は100個について行い、圧着ボール5が、図3(a)に示すように、平面視の外形が円形のもの全てなら「○」、同(b)に示すように、平面視の外形が一箇所でも突出した変形のものが1〜5つであれば「△」、同5つを超えておれば「×」とした。
「接合性」:
上記接合条件で接合したサンプルをボンドテスター2400(dage社製)にてバンプ5の電極4との接合部のシェア強度を30個測定し、平均化した。測定値から単位面積当たりのシェア強度を計算した。
その単位面積当たりのシェア強度が98MPa以上なら「○」、88MPa以上98MPa未満なら「△」、88MPa未満なら「×」とした。
「連続バンプ性」:
接合には市販のボンダーを使用し、溶融ボール(直径50μm)2を作製し、ステージ温度150℃にて、銀メッキ処理した42アロイ(鉄−ニッケル合金)のフレーム上にバンプ5を形成した。1000回以上に亘って所要の高さ、例えば、55μm以下のバンプ高さLを得たものを「○」とした。バンプ高さLが高くなり過ぎて、スパークエラーによるマシンストップが発生した場合は、溶融ボール2の直径を55μmにしてバンプ5の形成を行い、1000回以上に亘って所要の高さのバンプ高さLを得たものを「△」、バンプ高さLが高くなり過ぎて、スパークエラーによるマシンストップが発生した場合を「×」とした。
「総合評価」:
各評価で全て「○」のものを「◎」、「△」が一つで他全て「○」のものを「○」、「×」が無く「△」が二つ以上あるものを「△」、「×」が一つでもあるものを「×」とした。
なお、この評価において、「◎」のものは勿論のこと、「×」以外の「○」又は「△」のものは、半導体素子の種類により接合条件に制約がない場合等の使用条件によれば、この発明の作用効果を発揮して使用し得る。
The following tests were performed on each of the examples and comparative examples, and the results are shown in Table 2.
"Test method"
[Bonding conditions]:
A commercially available bonder was used for bonding to produce a molten ball (diameter 50 μm) 2 (see FIG. 1A), and bumps 5 were formed on the
"Press-fit ball (bump 5) shape":
The shape of the
“Jointness”:
30 samples of the joint strength of the
When the shear strength per unit area is 98 MPa or more, “◯” is indicated, when it is 88 MPa or more and less than 98 MPa, “Δ” is indicated, and when it is less than 88 MPa, “X” is indicated.
“Continuous bump”:
A commercially available bonder was used for bonding, a molten ball (diameter 50 μm) 2 was produced, and a
"Comprehensive evaluation":
In each evaluation, all items with “○” are “◎”, “△” is one, all others are “○” with “○”, and there is no “×” and there are two or more “△”. ”And“ × ”are“ × ”.
In this evaluation, not only “◎” but also “○” or “△” other than “×” depends on the use conditions such as when there are no restrictions on the bonding conditions depending on the type of semiconductor element. In this case, the present invention can be used with its effects.
この表1、2の比較例3、4から、Pd含有量が0.2〜1.5重量%を外れると、接合性において不都合が生じて総合評価が「×」となり、比較例1、2から、Ca、Ce、Ndのうち少なくとも1種以上の総含有量が40〜120重量ppmを外れると、圧着ボール形状、又は連続バンプ性において不都合が生じて総合評価が「×」となっている。 From Comparative Examples 3 and 4 in Tables 1 and 2, when the Pd content is out of 0.2 to 1.5% by weight, inconvenience occurs in the bondability, and the overall evaluation becomes “x”. From the above, if the total content of at least one of Ca, Ce, and Nd deviates from 40 to 120 ppm by weight, there is an inconvenience in the pressure-bonded ball shape or the continuous bump property, and the overall evaluation is “x”. .
これに対し、各実施例1〜28は、いずれも、Pdを0.2〜1.5重量%含有し、Ca、Ce、Ndのうち少なくとも1種以上を総和40〜120重量ppm含有したものであることから、総合評価において、「◎」「○」又は「△」を得ており、この発明の作用効果が得られることが理解できる。 In contrast, each of Examples 1 to 28 contains 0.2 to 1.5% by weight of Pd, and contains at least one of Ca, Ce and Nd in a total of 40 to 120 ppm by weight. Therefore, in the comprehensive evaluation, “◎”, “◯” or “Δ” is obtained, and it can be understood that the effects of the present invention can be obtained.
すなわち、実施例1〜9、13、21〜23から、Pdを0.5〜1.3重量%、Ca、Ce、Ndのうち少なくとも1種以上の総和を50〜100重量ppmにすると、総合評価において「◎」であり、優れた配合割合のワイヤWであることが理解できる。
一方、実施例10〜12、25〜28から、Pdが0.5〜1.3重量%であれば、Ca、Ce、Ndのうち少なくとも1種以上の総和が50〜100重量ppmを外れて40〜120重量ppm内であれば、「圧着ボール形状」又は「連続バンプ性」のみにおいて「△」となって、総合評価において、「○」となっている。
また、実施例14〜16、24から、Pdが0.5〜1.3重量%を外れて0.2〜1.5重量%内であって、Ca、Ce、Ndのうち少なくとも1種以上の総和が50〜100重量ppmであれば、「接合性」においてのみ「△」となって、総合評価において、「○」となっている。
さらに、実施例17〜20から、Pdが0.5〜1.3重量%を外れて0.2〜1.5重量%内、Ca、Ce、Ndのうち少なくとも1種以上の総和が50〜100重量ppmから外れて40〜120重量ppm内であれば、「圧着ボール形状」、「接合性」又は「連続バンプ性」の何れか二つにおいてのみ「△」となり、総合評価において、「△」となっている。
以上から、これらの配合割合のワイヤW(実施例10〜12、14〜20、24〜28)は、半導体素子の種類により接合条件に制約がない場合等の使用条件によれば、この発明の作用効果が得られることが理解できる。
That is, from Examples 1 to 9, 13, 21 to 23, when Pd is 0.5 to 1.3% by weight and a total of at least one of Ca, Ce, and Nd is 50 to 100 ppm by weight, It is “◎” in the evaluation, and it can be understood that the wire W has an excellent blending ratio.
On the other hand, if Pd is 0.5 to 1.3% by weight from Examples 10 to 12 and 25 to 28, the total of at least one of Ca, Ce, and Nd deviates from 50 to 100 ppm by weight. If it is within 40 to 120 ppm by weight, it is “Δ” only in “crimp ball shape” or “continuous bump property”, and “◯” in comprehensive evaluation.
Further, from Examples 14 to 16 and 24, Pd is within the range of 0.2 to 1.5% by weight out of 0.5 to 1.3% by weight, and at least one of Ca, Ce, and Nd If the total sum of 50 to 100 ppm by weight is “Δ” only in “Jointability” and “◯” in the overall evaluation.
Further, from Examples 17 to 20, Pd is outside 0.5 to 1.3% by weight and within 0.2 to 1.5% by weight, and the total of at least one of Ca, Ce and Nd is 50 to 50%. If it is in the range of 40 to 120 ppm by weight, which is out of 100 ppm by weight, “△” is obtained only in any two of “crimp ball shape”, “joinability” or “continuous bump property”. "
From the above, the wires W (Examples 10 to 12, 14 to 20, and 24 to 28) having these blending ratios are in accordance with the use conditions such as when the bonding conditions are not limited by the type of the semiconductor element. It can be understood that the effect is obtained.
W バンプ用ワイヤ
2 溶融ボール
3 ICチップ(半導体チップ)
4、8 電極
5 バンプ(圧着ボール)
4, 8
Pdの添加は溶融ボール2作製時の再結晶領域が短くなり、バンプ高さLが短く安定化し、バンプ5の形状が安定するとともに、ワイヤWの先端と放電棒gとの距離が安定するため、スパークエラーによるマシンストップが発生することなく連続でバンプ形成が可能となる。その含有量(添加量)は0.2〜1.5重量%とし、0.2重量%未満であると、前記効果が望めず、1.5重量%を超えると、溶融ボールが硬くなり過ぎて、接合時に十分な接合面積が得られず、また、Au−Al間で合金層の生成が不十分となるため、接合性が低下する。この低下を招くことなく安定して接合するためには高温、高荷重、高超音波出力で接合する必要があるが、それらを行うと、半導体素子の損傷等の不具合が発生する。さらに、ワイヤ自体の電気抵抗が増加するという問題点もある。好ましくは、0.5〜1.3重量%とする。
The addition of Pd shortens the recrystallization region when the
この発明は、以上のように、Pdを適量含有し、さらにCa、Ce、Ndのうち少なくとも1種以上を適量含有したワイヤとしたので、バンプ高さLが短く安定化し、バンプ5の形状が安定するとともに、ワイヤWの先端と放電棒gとの距離が安定するため、スパークエラーによるマシンストップが発生することなく連続でバンプ形成が可能となる。
As described above, the present invention is a wire containing an appropriate amount of Pd and further containing an appropriate amount of at least one of Ca, Ce, and Nd. Therefore, the bump height L is shortened and the shape of the
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Citations (3)
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JPH0291944A (en) * | 1988-09-29 | 1990-03-30 | Mitsubishi Metal Corp | Gold alloy fine wire for gold bump |
JPH06112253A (en) * | 1992-09-30 | 1994-04-22 | Tanaka Denshi Kogyo Kk | Bonding wire for semiconductor element |
JP2007066991A (en) * | 2005-08-29 | 2007-03-15 | Tanaka Electronics Ind Co Ltd | Cutting method of wire |
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JPH0291944A (en) * | 1988-09-29 | 1990-03-30 | Mitsubishi Metal Corp | Gold alloy fine wire for gold bump |
JPH06112253A (en) * | 1992-09-30 | 1994-04-22 | Tanaka Denshi Kogyo Kk | Bonding wire for semiconductor element |
JP2007066991A (en) * | 2005-08-29 | 2007-03-15 | Tanaka Electronics Ind Co Ltd | Cutting method of wire |
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