JP2012089460A - Separator for fuel cell and plasma processing apparatus therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a separator for a solid polymer type fuel cell having superior corrosion resistance and using a metal substrate with low contact resistance, and to provide a plasma processing technology and a plasma processing device which are excellent in productivity.SOLUTION: On the surface of a metallic separator substrate, a silicon-containing carbon based film is deposited of which the contact resistance is 10 mΩcm2 or less and the water repellent angle is 80 degrees or more. A first substrate electrode group 2a and a second substrate electrode group 2b, which are formed by arranging each of a plurality of metal substrates 3 in substantially parallel to a pair of substrate supports 2 and locking them at equal intervals, are arranged in a plasma processing container while being meshed with each other at substantially equal intervals, high-frequency power is fed to a pair of substrate electrode groups via capacitors 7, and a negative pulsating voltage or pulse voltage is applied to the pair of the substrate electrode groups via low-pass filters 12.

Description

  The present invention relates to a solid polymer fuel cell separator excellent in corrosion resistance and having a small contact electric resistance with an anode and a cathode electrode, and a plasma processing apparatus thereof.

  In recent years, fuel cells have attracted attention as energy sources for solving global environmental problems and energy problems. In particular, since the polymer electrolyte fuel cell can be operated at a low temperature and can be reduced in size and weight, application to a household power source or a fuel cell vehicle is being studied.

  One of the important parts that constitute a general polymer electrolyte fuel cell is a separator. The properties required for this separator include excellent corrosion resistance in an acidic atmosphere, high mechanical strength against vibration, etc., low contact resistance with carbon paper serving as the anode and cathode electrodes, groove processing, etc. It is excellent in workability, light and inexpensive.

  Recently, a metal plate such as a stainless steel plate has been mainly studied as a base material for a separator that satisfies the above-mentioned various characteristics. Separators using metals such as stainless steel, titanium, and alloys thereof have good corrosion resistance by forming a passive film on the surface, but this passive film increases contact resistance with the anode and cathode electrodes. Therefore, it is known that the conductivity is hindered and the power generation efficiency of the fuel cell is lowered. In addition, the corrosion resistance is not sufficient, and the eluted ions are known to degrade the catalyst characteristics and the ionic conductivity of the solid polymer membrane, resulting in degradation of the power generation characteristics of the fuel cell. Yes.

  For this reason, a corrosion-resistant metal material, for example, a carbide-based or boride-based metal inclusion is deposited on the surface of stainless steel to remove the conductivity-inhibiting factor due to the passive film (see Patent Document 1). The one that forms a mixed film of conductive ceramic fine particles and conductive resin (see Patent Document 2), the one that forms a film layer having amorphous carbon and a conductive portion on the surface of a metal substrate (see Patent Document 3), etc. have been studied. Yes.

  Patent Document 1 discloses a technique for precipitating carbon or / and boron in stainless steel as fine particles of chromium carbide and chromium boride on the surface of the substrate by heat-treating stainless steel at 800 ° C. to 1200 ° C. for a long time. It is disclosed. These fine particles have a low resistivity and do not form a passive film on the surface thereof, so that the contact resistance can be sufficiently lowered. However, since the stainless steel substrate is exposed, metal ions are eluted in the electrolytic solution, and it is necessary to heat treat the stainless steel substrate at 800 ° C. to 1200 ° C. for a long time.

Patent Document 2 discloses a fuel cell separator technology excellent in corrosion resistance in which a metal substrate surface is coated with at least one conductive resin layer. Corrosion resistance is improved by setting the mass ratio of the conductive ceramics and the binder resin in the conductive resin layer to 30/70 to 70/30 and the thickness of the conductive resin layer in the range of 0.5 to 10 μm. It is described that the contact resistance with the cathode electrode can be reduced to about 15 mΩ · cm ² . However, recently, a contact resistance of 5 mΩ · cm ² or less has been required, and has not been put into practical use.

Patent Document 3 discloses a fuel cell separator technology having a coating layer composed of an amorphous carbon layer and a conductive portion on a metal substrate. The separator includes an amorphous carbon layer and a coating layer including a conductive portion composed of the amorphous carbon layer and graphite fine particles. Although the corrosion resistance is improved, since amorphous carbon is an insulating film, there is a problem that the contact resistance is about 10 mΩ · cm ² and cannot be sufficiently lowered.

JP 2003-193206 A JP 2007-273458 A JP 2008-204876 A Japanese Patent Application No. 2008-184765

ECI Symposium Series, Volume RP5, Tomar, Portugal, July 1-7, 2007, P.A. 221-228

  The problem to be solved by the present invention is to provide a low-cost separator for a polymer electrolyte fuel cell using a metal substrate having excellent corrosion resistance and low contact resistance, and a plasma processing apparatus excellent in productivity. It is to provide. Another object of the present invention is to provide a fuel cell separator surface-treated and a polymer electrolyte fuel cell using the fuel cell separator at low cost.

  The present application has been made to solve the above problems, and provides the following inventions.

The separator for a fuel cell according to claim 1 of the present invention is formed by depositing a carbon-based film having a contact resistance of 10 mΩ · cm ² or less and a water repellent angle of 80 ° or more on a metal separator substrate surface. Features.

  A fuel cell separator according to claim 2 of the present invention is characterized in that the carbon-based coating film according to claim 1 contains 5 atomic% to 35 atomic% of silicon element.

A fuel cell separator according to a third aspect of the present invention is characterized in that the carbon-based film according to the first and second aspects has a thickness of 0.05 μm to 2 μm.

  A plasma processing apparatus according to a fourth aspect of the present invention includes a plasma processing container, a pair of substrate supports that support the substrate to be processed in the plasma processing container, a heating unit that heats the substrate to be processed, and the pair. In a plasma processing apparatus comprising a high-frequency power source that feeds high-frequency power to a substrate support member and a bias power source that feeds power by superimposing a bias voltage on the pair of substrate support members, a plurality of each of the pair of substrate support members A pair of opposing electrode plates is formed by meshing the second substrate electrode group and the second substrate electrode group, which are substantially parallel and equally spaced, with the second substrate electrode group meshing with each other at substantially equal intervals. A high-frequency power is supplied to the electrode plates via a capacitor, and a bias voltage can be supplied to the pair of counter electrode plates via a low-pass filter.

  A plasma processing apparatus according to claim 5 of the present invention is characterized in that a distance between the pair of counter electrode plates according to claim 4 is 20 mm to 80 mm.

  The plasma processing apparatus according to claim 6 of the present invention is such that the bias power supply according to claims 4 and 5 can supply a negative pulsating voltage, a rectangular wave voltage, or a pulse voltage having a frequency of 50 Hz to 100 kHz. It is characterized by.

  According to a seventh aspect of the present invention, there is provided a plasma processing apparatus, wherein the bias power source according to any one of the fourth to sixth aspects generates a negative pulsating voltage obtained by performing both-wave rectification on a sine wave voltage having a frequency of 50 Hz to 100 kHz. It is the structure which is applied to a counter electrode plate alternately.

  The plasma processing apparatus according to claim 8 of the present invention is a control in which the heating means according to any one of claims 4 to 7 heats the pair of counter electrode plates to 200 ° C. to 500 ° C. and maintains the temperature at the temperature. It has the apparatus.

  A solid polymer electrolyte fuel cell according to a ninth aspect of the present invention is surface-treated by the fuel cell separator according to any one of the first to third aspects and / or the plasma processing apparatus according to the fourth to eighth aspects. Further, a fuel cell separator is applied.

  According to the present invention, a separator for a polymer electrolyte fuel cell using a metal substrate having excellent corrosion resistance and low contact resistance can be provided, and a manufacturing technique excellent in productivity can be provided. Moreover, the separator for fuel cells manufactured by this, and the polymer electrolyte fuel cell using the said separator for fuel cells can be provided at low cost.

It is a schematic drawing of the principal part composition of the plasma treatment apparatus concerning the present invention. It is a schematic drawing which shows the structure of a pair of counter electrode plate which concerns on this invention. It is drawing which shows the dynamic potential polarization measurement result of the separator board | substrate which adhered the electroconductive DLC film which concerns on this invention. It is a figure which shows the relationship between the silicon content rate and water repellency of the electroconductive film which concerns on this invention. It is the schematic of the principal part structure of the other plasma processing apparatus which concerns on this invention.

The fuel cell separator according to the present invention is characterized in that a carbon-based film having a contact resistance of 10 mΩ · cm ² or less and a water repellent angle of 80 ° or more is applied to the surface of a metal separator substrate. The carbon-based film is conductive diamond-like carbon (hereinafter also referred to as conductive DLC) containing 5 atomic% to 35 atomic% of silicon element. Ordinary diamond-like carbon (hereinafter also referred to as DLC) is insulative and has a water repellency angle of 65 ° to 70 ° with respect to water, but the water repellency of a conductive DLC film containing 5 to 35 atomic percent of silicon element. It is known that the angle improves from 80 ° to 100 ° (see Non-Patent Document 1).

When a conductive DLC film having a thickness of 1 μm and a resistivity of 10 Ω · cm or less is applied, since the resistance value per square centimeter is 1 mΩ or less, practically a conductive DLC film having a resistivity of 10 Ω · cm or less is used. Good. However, in order to reduce the contact resistance to 10 mΩ · cm ² or less, the resistivity of the conductive DLC film is desirably 0.1 Ω · cm or less. According to the experiment results of the inventors, a conductive DLC film having a resistivity of 10 mΩ · cm is obtained (see Patent Document 4).

  On the other hand, a normal DLC film is a film having excellent chemical resistance and is not affected by an acidic solution or an alkaline solution. Alternatively, there are pinholes smaller than that, and the solution permeates through the pinholes to corrode the underlying metal substrate. However, the conductive DLC film to which the silicon element is added has a water repellency angle of 90 ° or more, and the fuel cell separator coated with the conductive DLC film has a pinhole of about micron or less. However, since the solution cannot penetrate through the pinhole, the metal substrate is not corroded. That is, it becomes a conductive DLC film which suppresses the occurrence of pitting corrosion and exhibits substantially excellent corrosion resistance.

  Further, by laminating a gradient composition film in which the silicon element content in the conductive DLC film is increased toward the surface side, or a film having a different silicon element content, the water repellency angle on the film surface is increased and the corrosion resistance is increased. Can also be improved. When applied to the fuel cell separator according to the present invention, the thickness of the carbon-based film is preferably 0.05 μm to 2 μm.

  FIG. 1 shows a schematic diagram of a main configuration of a plasma processing apparatus according to the present invention. FIG. 2 shows a conceptual diagram of a pair of substrate support 2 and the first substrate electrode group 2a and the second substrate electrode group 2b. A plasma processing container 1; a pair of substrate supports 2 that support a substrate 3 to be processed in the plasma processing container; a high-frequency power source 5 that supplies high-frequency power to the pair of substrate supports; and the pair of substrate supports 2 is a plasma processing apparatus including a bias power supply 8 that feeds power by superimposing a bias voltage on 2, and a plurality of metal substrates 3 are engaged with the pair of substrate support members 2 at substantially equal intervals. Like the first substrate electrode group 2a, the second substrate electrode group 2b is meshed with each other at substantially equal intervals to form a pair of counter electrode plates 4, and high frequency power is applied to the pair of counter electrode plates via a capacitor 7. Power is supplied, and a bias voltage is supplied to the pair of counter electrode plates 4 via a low-pass filter 12.

  A raw material gas is introduced into the plasma processing vessel, high frequency power is supplied to the pair of counter electrode plates 4 to generate discharge plasma, and a negative bias voltage is simultaneously applied to conduct both surfaces of the substrate electrode group on the substrate. A protective DLC film is applied. As the high frequency power source 5, for example, one having a frequency of 13.56 MHz and an output of 300 W to 3 kW can be used.

  As the bias power source 8, a power source capable of supplying a negative pulsating current voltage of 300 V to 5 kV or / and a negative pulse voltage can be used. FIG. 1 shows a conceptual diagram of generation of a negative pulsating voltage. The output voltage of the AC voltage generator 9 is fed to the primary side of the transformer 10, and the secondary output voltage is rectified by the diode 11 to generate a negative pulsating voltage. The pulsating voltage is alternately supplied to the pair of counter electrode plates 4 through the low-pass filter 12. The frequency of the AC voltage is not specified, but is preferably 50 Hz to 200 kHz. Furthermore, it is preferably 1 kHz to 100 kHz.

  According to the present invention, the conductive DLC film can be formed by generating discharge plasma of a source gas mainly by the high-frequency power and supplying the pulsating current voltage. According to another embodiment of the present invention, the high-frequency power is supplementarily used for generating discharge plasma of the source gas, and the discharge plasma is maintained by the pulsating voltage from the bias power source 8 to obtain a desired conductive DLC film. Can also be formed. Furthermore, it is possible to form a desired conductive DLC film only by supplying the pulsating voltage.

  According to another embodiment of the present invention, as shown in FIG. 4, a bias power source 20 that can alternately apply a negative pulse voltage to the pair of counter electrode plates 4 can be used as a bias power source. By alternately applying a negative pulse voltage to the first substrate electrode group 2a and the second substrate electrode group 2b, a potential difference can be generated between both substrate electrodes, and the plasma in the plasma accelerated by this potential difference can be generated. Ions are incident on both surfaces of the substrate to form a conductive DLC film.

  The heating means is provided with a heating means (not shown) along the inner wall surface of the plasma processing vessel, and the pair of counter electrode plates 4 are heated to 200 ° C. to 500 ° C. by radiant heat from the heating plate. According to the present invention, the substrate temperature is indispensable for the formation of the conductive DLC film, and the preferred temperature range is 350 ° C. to 450 ° C.

  As shown in FIGS. 1 and 2, three A6 size stainless steel separator substrates (SUS304) 3 are engaged with a pair of substrate supports 2 in parallel at intervals of 8 cm, and the first substrate electrode group 2a. The second substrate electrode group 2b is configured and meshed with each other at substantially equal intervals to form a pair of counter electrode plates 4. The electrode interval was about 4 cm. The pair of counter electrode plates are installed in the plasma processing container, and one of the power supply terminals is connected to the output terminal of the high-frequency power source 5 through the matching unit 6 and the capacitor 7, and the other power supply terminal is connected through the capacitor 7. And grounded. The power supply terminals of the pair of counter electrode plates 4 are connected to a bias power source 8 through a low-pass filter 12.

  The pair of counter electrode plates was heated to 400 ° C. by a heating means installed with a heat shielding material sandwiched along the inner wall surface of the plasma processing vessel. After exhausting the inside of the plasma processing apparatus to a high vacuum in advance and sufficiently discharging the gas, a mixed gas of hydrogen gas 20% and argon gas 80% is introduced to adjust the gas pressure to 0.6 Pascal, the frequency is 13.56 MHz, Discharge plasma was generated by supplying high-frequency power with an output of 1 kW. The substrate surface was cleaned by applying a pulsating voltage of 500 V to the pair of counter electrode plates. The natural oxide film and adsorbed gas on the substrate surface were removed.

Next, a fluorocarbon (CF ₄ ) gas, an acetylene (C ₂ H ₂ ) gas, and a hexamethyldisiloxane ((CH ₃ ) ₃ SiOSi (CH ₃ ) ₃ , hereinafter also referred to as HMDSO) gas are flowed as raw material gases. The gas pressure was adjusted to 0.5 Pascal by introducing at a ratio of 2: 1: 1, and 1 kW high frequency power was supplied to the pair of counter electrode plates to generate discharge plasma. At the same time, a negative pulsating voltage having a frequency of 33 kHz and 750 V was applied from the bias power supply 8 while being superimposed on the pair of counter electrode plates to form a conductive DLC film.

  A conductive DLC film having a thickness of 160 nm was obtained with a film formation time of 6 minutes. The coating had a fluorine content of 2.5 atomic%, a silicon content of 25 atomic%, and an oxygen content of 22 atomic%. The hardness of the entire coating was 12 GPa and the water contact angle was 91 °. FIG. 3 shows the results of measuring the relationship between the silicon content and the water repellency by changing the flow rate ratio of the HMDSO gas. It can be seen that the water repellency increases in proportion to the silicon content.

As a result of measuring the resistivity with a four-probe measuring instrument Napson, RT-7, the resistivity of the conductive DLC film was 12 mΩ · cm. Further, the sample coated with the conductive DLC film was cut into 3 cm squares, set with carbon paper sandwiched between both sides of an aluminum electrode, a pressure of 10 kgf / cm ² , a current density of −2.0 to +2. Contact resistance was evaluated in the range of A / cm ² . As a result, a contact resistance of 5 to 10 mΩ · cm ² was obtained.

  In order to evaluate the corrosion resistance of the separator substrate coated with the conductive DLC film obtained in this example, a potentiodynamic polarization measurement was performed at room temperature in a 0.05 molar sulfuric acid solution. An electrochemical measuring device (manufactured by Solartron, SI 1280B) was used for the measurement. The measurement results are shown in FIG. Curve (1) shows the dynamic potential polarization of the stainless steel substrate, and (2) shows the dynamic potential polarization of the stainless steel substrate coated with the conductive DLC film. It can be seen that by applying the conductive DLC film, the current density is reduced by about an order of magnitude, the passive holding potential moves to the high potential side, and the corrosion resistance is improved.

  In this example, the temperature of the separator substrate was maintained at 400 ° C. to form a conductive DLC film. However, when a film having a resistivity of about 10 Ω · cm was formed, the temperature of the separator substrate was maintained at 250 ° C. Thus, a conductive DLC film can be formed.

  As in the first embodiment, three A6 size stainless steel separator substrates 3 are locked to a pair of substrate supports 2 in parallel with each other at an interval of 8 cm, and the first substrate electrode group 2a and the second substrate electrode The group 2b was manufactured and meshed with each other at substantially equal intervals to form a pair of counter electrode plates 4. The electrode interval was about 4 cm. The pair of counter electrode plates are installed in the plasma processing vessel, one power supply terminal is connected to the output terminal of the high-frequency power source 5 through the matching unit 6 and the capacitor 7, and the other power supply terminal is connected to the capacitor 7. Grounded through. The power supply terminals of the pair of counter electrode plates were connected to a bias power source 8 via a low-pass filter 12.

  After the pair of counter electrode plates are heated to 300 ° C. and the inside of the plasma processing apparatus is evacuated to a high vacuum in advance and sufficiently degassed, a mixed gas of hydrogen gas 20% and argon gas 80% is introduced, frequency 13. A high frequency power of 56 MHz and an output of 1 kW was supplied to generate discharge plasma, and the substrate surfaces of the pair of counter electrode plates were cleaned.

Next, fluorocarbon gas, acetylene gas and tetramethylsilane gas (Si (CH ₃ ) ₄ ) are introduced as source gases at a flow ratio of 3: 1: 1 to adjust the gas pressure to 15 Pascals, The counter electrode plate was supplied with 500 W of high frequency power to generate discharge plasma. At the same time, a negative pulsating voltage with a frequency of 33 kHz and 950 V was applied from the bias power supply 8 while being superimposed on the pair of counter electrode plates to form a conductive DLC film. In this embodiment, the high-frequency power is used as an auxiliary power source for facilitating the start of discharge and stable discharge, and high-density plasma is generated by the pulsating voltage supplied from the bias power source, thereby the pair of electrode plates. A conductive DLC film was formed on the surface.

  A conductive DLC film having a thickness of 230 nm was obtained in a film formation time of 6 minutes. The coating had a fluorine content of 6 atomic%, a silicon element content of 32 atomic%, a total hardness of 15 GPa, and a water contact angle of 95 to 110 °. As a result of measuring the resistivity with a four-probe measuring instrument Napson, RT-7, the resistivity of the conductive DLC film was 5.5 Ω · cm. The contact resistance was almost the same as in Example 1.

  FIG. 5 shows another embodiment of the present invention. The main part structure of the plasma processing apparatus used by the present Example, and the schematic of the bias power supply 20 are shown. The bias power source 20 includes a DC power source 23, a pulse signal generator 22, and switching elements 21a and 21b. The DC power source 23 is a variable DC power source that generates a negative DC voltage of 300 V to 10 kV. The pulse signal generator 22 is a pulse signal generator that alternately operates the switching elements 21a and 21b, and generates a pulse signal having a repetition frequency of 500 Hz to 5 kHz and a pulse width of 500 μs to 5 μs.

  An output terminal of the bias power source is connected to the first substrate electrode group 2a and the second substrate electrode group 2b through a low-pass filter 12. By applying the pulse signal to the switching elements 21a and 21b, an arbitrary negative pulse voltage can be alternately applied to the first substrate electrode group 2a and the second substrate electrode group 2b.

  As in Example 1, the pair of counter electrode plates was heated to 400 ° C., and the plasma processing apparatus was evacuated to a high vacuum in advance to sufficiently outgas, and then mixed with 20% hydrogen gas and 80% argon gas. Gas is introduced, high-frequency power having a frequency of 13.56 MHz and an output of 300 W is supplied to generate discharge plasma, and a negative pulse voltage having a repetition frequency of 1 kHz, a pulse voltage of 5 kV, and a pulse width of 10 μs is applied from a bias power source. The substrate surface of the counter electrode plate was cleaned.

  Next, fluorocarbon gas, acetylene gas and tetramethylsilane gas are introduced as raw material gases at a flow ratio of 2: 1: 1 to adjust the gas pressure to 0.6 Pascal, and 500 W is applied to the pair of counter electrode plates. The high-frequency power was fed to generate discharge plasma. At the same time, a negative pulse voltage having a frequency of 3 kHz and a pulse voltage of −5 kV was alternately applied from the bias power source 20 to the pair of counter electrode plates to form a conductive DLC film. In this embodiment, discharge plasma is excited by the high-frequency power, and high-density plasma can be generated by a high voltage pulse voltage fed from the bias power source 20, and a conductive DLC film is formed on the surfaces of the pair of electrode plates. We were able to.

  A conductive DLC film having a thickness of 190 nm was obtained in a film formation time of 10 minutes. The silicon element content of the coating was 33 atomic%, the hardness of the entire coating was 15 GPa, and the contact angle of water was almost the same as in Example 2. As a result of measuring the resistivity with a four-probe measuring instrument Napson, RT-7, the resistivity of the conductive DLC film was 8.5 mΩ · cm.

  In the above embodiment, the separator substrate material is applied to the stainless steel SUS304 substrate. However, the present invention is not limited to this, and it can be applied to non-ferrous metal materials such as titanium, nickel, magnesium, aluminum, and alloy materials thereof. Absent.

  1: vacuum vessel, 2: substrate support, 2a, 2b: substrate electrode group, 3: substrate to be processed, 4: counter electrode plate, 5: high frequency power supply, 6: matching unit, 7: capacitor, 8: bias power supply, 9: AC voltage generator, 10: Transformer, 11: Diode, 12: Low-pass filter, 13: Feedthrough, 20: Bias power supply, 21a, 21b: Switching element, 22: Pulse signal generator, 23: DC power supply,

Claims (9)

A fuel cell separator, comprising a metal fuel cell separator substrate surface coated with a carbon-based coating having a contact resistance of 10 mΩ · cm ² or less and a water repellent angle of 80 ° or more.   2. The fuel cell separator according to claim 1, wherein the carbon-based coating contains 5 atomic% to 35 atomic% of silicon element.   3. The fuel cell separator according to claim 1, wherein the carbon-based coating has a thickness of 0.05 μm to 2 μm.   A plasma processing container, a pair of substrate supports that support the substrate to be processed in the plasma processing container, a heating unit that heats the substrate to be processed, and a high-frequency power source that supplies high-frequency power to the pair of substrate supports In the plasma processing apparatus comprising a bias power supply for supplying a bias voltage by superimposing a bias voltage on the pair of substrate supports, a plurality of metal substrates are locked to the pair of substrate supports substantially in parallel and at equal intervals, respectively. The first substrate electrode group and the second substrate electrode group are meshed with each other at substantially equal intervals to form a pair of counter electrode plates, and high frequency power is fed to the pair of counter electrode plates via a capacitor, The plasma processing apparatus is configured to supply a bias voltage to the pair of counter electrode plates via a low-pass filter.   The plasma processing apparatus according to claim 4, wherein an interval between the pair of counter electrode plates is 20 mm to 80 mm.   6. The plasma processing apparatus according to claim 4, wherein the bias voltage is any one of a negative pulsating voltage, a rectangular wave voltage, and a pulse voltage having a frequency of 50 Hz to 100 kHz.   The bias power supply is configured to alternately apply a negative pulsating voltage obtained by performing both-wave rectification of a sine wave voltage having a frequency of 50 Hz to 100 kHz to the pair of counter electrode plates. A plasma processing apparatus according to claim 1.   The plasma processing apparatus according to claim 4, wherein the heating unit includes a control device that heats the pair of counter electrode plates to 200 ° C. to 500 ° C. and maintains the temperature at the temperature.   A solid polymer electrolyte type comprising the fuel cell separator according to any one of claims 1 to 3 and / or the fuel cell separator produced by the plasma processing apparatus according to claims 4 to 8. Fuel cell.

Images