JP2012074511A - Resin sealing type semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which meets the need of the height reduction compared to a conventional semiconductor device without deteriorating the excellent heat radiation and insulation performances in the conventional semiconductor device.SOLUTION: A resin sealing type semiconductor device includes a frame part including a die pad 110 (120), a first lead 116 (126), and a second lead 140 (130), semiconductor elements 172, 174, 176, and 178, and first and second coupling connectors 150 (160), which are respectively joined to the semiconductor elements 176 and 178 (172, 174) at one end and joined to a connection part 132 (142) of the second lead 130 (140) at the other end. A bent part 118 (128), which is formed between the die pad 110 (120) and the first lead 116 (126) in order to locate the first lead 116 (126) on the front side relative to a semiconductor element mounting surface 112 (122), is formed of a part of the die pad 110 (120).

Description

  The present invention relates to a resin-encapsulated semiconductor device.

  Single in-line bridge diodes have been widely used in various power supply devices conventionally (see, for example, Non-Patent Document 1).

  FIG. 7 is a diagram for explaining a conventional single in-line bridge diode 900. 7A and 7B are perspective views of the single in-line type bridge diode 900, and FIG. 7C is a cross-sectional view of the single in-line type bridge diode 900. FIG. In FIG. 7B, the single-in-line type bridge diode 900 is illustrated with the resin 980 made transparent.

  As shown in FIG. 7, the conventional single in-line bridge diode 900 includes a frame part including a first die pad 910, a second die pad 920, first leads 916, 926, and second leads 940, 930, and a semiconductor element 972. 976, 974, 978 (see FIG. 8B described later), and a first connection connector 950 and a second connection connector 960.

The first die pad 910 has two semiconductor element mounting surfaces 912 and 913 each mounting one semiconductor element 972 and 976 and a first connecting portion 914 connecting them. The second die pad 920 has two semiconductor element mounting surfaces 922 and 923 each mounting one semiconductor element 978 and 974, and a second connecting portion 924 that connects them (see FIG. 8A and FIG. 8 described later). (Refer FIG.8 (b).).
The first lead 916 is formed integrally with the first die pad 910 and extends in the first direction A that is separated from the semiconductor element mounting surface 912. The first lead 926 is formed integrally with the second die pad 920 and extends in the first direction A that is separated from the semiconductor element mounting surface 922.
The second lead 940 is disposed apart from the first die pad 910 and has a connection portion 942 and extends in the first direction A. The second lead 930 is disposed away from the second die pad 920 and has a connection portion 932 and extends in the first direction A.

The semiconductor element 972 is fixed to the semiconductor element mounting surface 912, the semiconductor element 976 is fixed to the semiconductor element mounting surface 913, the semiconductor element 978 is fixed to the semiconductor element mounting surface 922, and the semiconductor element 974 is mounted on the semiconductor element mounting surface. It is fixed to the surface 923.
The first connection connector 950 has one end joined to the semiconductor elements 976 and 978 and the other end joined to the connection portion 942 of the second lead 940 to electrically connect the semiconductor elements 976 and 978 to the second lead 940. To do.
The second connection connector 960 has one end joined to the semiconductor elements 972 and 974 and the other end joined to the connection portion 932 of the second lead 930 to electrically connect the semiconductor elements 972 and 974 and the second lead 930. To do.
The first die pad 910, the second die pad 920, the first connection connector 950, and the second connection connector 960 are each made of a plate-shaped metal member.

  The first leads 916 and 926 are formed on each die pad so that the first leads 916 and 926 are positioned in front of the semiconductor element mounting surfaces 912, 913, 922, and 923 when the single in-line bridge diode 900 is viewed from the front. Bent portions 918 and 928 are formed between the first die pad 910 and the second die pad 920 and the first leads 916 and 926. In addition, in this invention, a front side means the surface on the opposite side to the surface which attaches a radiation fin.

The conventional single in-line type bridge diode 900 configured as described above can be assembled as follows.
FIG. 8 is a diagram illustrating a method for assembling a conventional single in-line bridge diode 900. 8A to 8E are process diagrams.

  First, as shown in FIG. 8A, a lead frame as a base of the frame portion is prepared. At this time, the first lead 916, 926 and the second lead 930, 940 are integrated by the tie bars 906, 908. This is to facilitate handling when assembling the single in-line bridge diode 900. Moreover, it is for making a tie bar function as a resin sealing part which prevents resin outflow in a resin sealing process.

  Next, as shown in FIG. 8B, the semiconductor elements 972, 974, 976, 978 are bonded and fixed to the respective semiconductor element mounting surfaces 912, 923, 913, 922.

  Next, as shown in FIG. 8C, one end of the first connecting connector 950 is joined to the semiconductor elements 976 and 978, and the other end is joined to the connection portion 942 of the second lead 940. 976 and 978 and the second lead 940 are electrically connected. In addition, one end of the second connection connector 960 is joined to the semiconductor elements 972 and 974 and the other end is joined to the connection portion 932 of the second lead 930 so that the semiconductor elements 972 and 974 and the second lead 930 are electrically connected. Connecting.

  Next, as shown in FIG. 8D, after the frame portion, the semiconductor elements 972, 974, 976, 978, the first connection connector 950 and the second connection connector 960 are covered with a mold, A resin is sealed inside the mold and the resin is cured.

  Finally, as shown in FIG. 8E, the first lead 916, 926 and the second lead 930, 940 are separated from the tie bars 906, 908 by punch cutting.

  In this way, the conventional single in-line bridge diode 900 can be assembled.

  According to the single in-line bridge diode 900 configured as described above and manufactured as described above, each die pad (first die pad 910 and second die pad 920) on which a semiconductor element is mounted is located on the back side. The space between the heat dissipating fin attached to the back side of the single in-line type bridge diode and the semiconductor element is reduced, and excellent heat dissipating performance can be obtained.

  Further, according to the conventional single in-line type bridge diode 900, each lead (the first lead 916, 926 and the second lead 930, 940) is located on the near side, so that the space between the heat radiation fin and each lead is increased. Excellent insulation performance can be obtained.

Product Information> Semiconductor Products> Diodes> Bridge Diodes> Lead Insertion Type [online], Shindengen Electric Co., Ltd. [searched on September 16, 2010], Internet, <URL: http: //www.shindengen. com.product / semi / list_detail_NEW.php? category_id = 01 & sub_id = 03 & product_id = D25JAB80V>

  By the way, with the recent progress of miniaturization of electronic devices, the above-mentioned single in-line type bridge diode is also low in height along the lead extending direction, that is, there is an increasing demand for low profile, There is a problem of providing a single in-line bridge diode that satisfies such requirements. Such a problem is not a problem that exists only in the case of a single in-line type bridge diode, but a problem that exists over the entire resin-encapsulated semiconductor device.

  Therefore, the present invention has been made in view of the above-described problems, and does not degrade the excellent heat dissipation performance and the excellent insulation performance of the conventional resin-encapsulated semiconductor device, but rather than the conventional resin-encapsulated semiconductor device. Another object of the present invention is to provide a resin-encapsulated semiconductor device that can satisfy the demand for a low profile.

[1] A resin-encapsulated semiconductor device according to the present invention includes a die pad having a semiconductor element mounting surface on which a semiconductor element is mounted, and a first pad formed integrally with the die pad and extending in a first direction separated from the semiconductor element mounting surface. A frame portion provided with a second lead which is disposed apart from one lead and the die pad and has a connection portion and extends in the first direction; and the semiconductor element fixed to the semiconductor element mounting surface; A resin-encapsulated semiconductor device having an end joined to the semiconductor element and the other end joined to the connection portion of the second lead, and a connecting connector for electrically connecting the semiconductor element and the second lead When the resin-encapsulated semiconductor device is viewed from the front, the die pad and the first lead are positioned so that the first lead is positioned on the front side of the semiconductor element mounting surface. Bent portion formed between the, characterized in that it is formed from a portion of the die pad.

According to the resin-encapsulated semiconductor device of the present invention, since the die pad on which the semiconductor element is mounted is located on the back side, the distance between the radiation fin and the semiconductor element is reduced, and excellent heat radiation performance can be obtained.
In addition, according to the resin-encapsulated semiconductor device of the present invention, since each lead (first lead and second lead) is located on the near side, the space between the heat radiation fin and each lead is increased, and excellent insulation performance is achieved. Is obtained.
Furthermore, according to the resin-encapsulated semiconductor device of the present invention, since the bent portion formed between the die pad and the first lead is formed from the portion of the die pad, each lead (first lead and second lead). It is possible to make the height along the extending direction of the leads even lower than in the case of the conventional resin-encapsulated semiconductor device. As a result, according to the resin-encapsulated semiconductor device of the present invention, it is possible to satisfy the demand for lower height than the conventional resin-encapsulated semiconductor device.

  In this specification, “the bent portion is formed from the die pad portion” means that when the frame portion before forming the bent portion is viewed from the front with the first direction facing down, the bent portion Means that it is formed from a portion at a height position where at least some portion of the die pad exists.

[2] The resin-encapsulated semiconductor device of the present invention is a single in-line type bridge diode, and as the die pad, two semiconductor element mounting surfaces each mounting one semiconductor element, and these are provided in the first direction side. A first die pad having a first connecting portion to be connected with each other, two semiconductor element mounting surfaces each mounting one semiconductor element, and a second connecting portion for connecting them on the second direction side opposite to the first direction. The first die pad has a second die pad, and the first connecting portion in the first die pad and the second connecting portion in the second die pad are formed with different bent portions, respectively.

  With such a configuration, the effect of the resin-encapsulated semiconductor device of the present invention can be obtained even in a single in-line bridge diode. In this case, the height along the extending direction A of each lead (first lead and second lead) can be further reduced.

[3] In the resin-encapsulated semiconductor device of the present invention, the first connecting portion and the second connecting portion are formed with a recess for ensuring insulation with a heat radiating fin mounting screw. Features.

  Even if it is a case where a bent part is provided in the 1st connection part and the 2nd connection part by setting it as such composition, insulation between the 1st connection part or the 2nd connection part, and a screw for heat radiation fin attachment It becomes possible to ensure the sex.

[4] A resin-encapsulated semiconductor device of the present invention is a resin-encapsulated semiconductor device including two semiconductor elements (for example, a diode), and includes two second leads as the second leads. As the connecting connector, one end is joined to one semiconductor element and the other end is joined to a connecting portion of one second lead to electrically connect the one semiconductor element and the one second lead. The first connecting connector, one end of which is joined to the other semiconductor element and the other end is joined to the connecting portion of the other second lead to electrically connect the other semiconductor element and the second second lead. And a second connecting connector to be connected.

  With such a configuration, the effect of the resin-encapsulated semiconductor device of the present invention can be obtained even in a resin-encapsulated semiconductor device including two semiconductor elements.

[5] The resin-encapsulated semiconductor device of the present invention is a semiconductor device including a three-terminal semiconductor element, the resin-encapsulated semiconductor device including two second leads as the second lead, As the connection connector, one end is joined to the first region of the semiconductor element and the other end is joined to the connection portion of one second lead, and the first region and the second one of the semiconductor element are joined. A first connecting connector for electrically connecting the leads, one end is joined to a second region different from the first region of the semiconductor element, and the other end is joined to a connecting portion of the other second lead; And a second connecting connector for electrically connecting the second region of the semiconductor element and the other second lead.

  With such a configuration, the effect of the resin-encapsulated semiconductor device of the present invention is obtained even in a resin-encapsulated semiconductor device including a three-terminal semiconductor element (for example, power MOSFET, IGBT, thyristor, etc.). be able to.

It is a figure shown in order to demonstrate the resin-sealed semiconductor device 100 which concerns on Embodiment 1. FIG. It is a figure which shows the method of assembling the resin-encapsulated semiconductor device 100 which concerns on Embodiment 1. FIG. It is a figure shown in order to demonstrate the resin sealing type semiconductor device 200 which concerns on Embodiment 2. FIG. It is a figure which shows the method of assembling the resin-sealed semiconductor device 200 which concerns on Embodiment 2. FIG. It is a figure shown in order to demonstrate the resin sealing type semiconductor device 300 which concerns on Embodiment 3. FIG. It is a figure which shows the method of assembling the resin-sealed semiconductor device 300 which concerns on Embodiment 3. FIG. It is a figure shown in order to demonstrate the conventional single in-line type bridge | bridging diode 900. FIG. It is a figure which shows the method of assembling the conventional single in-line type bridge | bridging diode 900. FIG.

  Hereinafter, the resin-encapsulated semiconductor device of the present invention will be described based on the embodiments shown in the drawings.

[Embodiment 1]
FIG. 1 is a view for explaining a resin-encapsulated semiconductor device 100 according to the first embodiment. 1A and 1B are perspective views of the resin-encapsulated semiconductor device 100, and FIG. 1C is a cross-sectional view of the resin-encapsulated semiconductor device 100. In FIG. 1B, the resin-encapsulated semiconductor device 100 is illustrated with the resin 180 made transparent.

  As shown in FIG. 1, the resin-encapsulated semiconductor device 100 according to the first embodiment includes a frame unit including a first die pad 110, a second die pad 120, first leads 116 and 126, and second leads 140 and 130, Semiconductor elements 172, 176, 174, and 178 (see FIG. 2B described later), a first connection connector 150, and a second connection connector 160 are provided. The resin-encapsulated semiconductor device 100 according to the first embodiment is a single in-line bridge diode.

The first die pad 110 has two semiconductor element mounting surfaces 112 and 113 each mounting one semiconductor element 172 and 176, and a first connection part 114 that connects these in the first direction. The second die pad 120 includes two semiconductor element mounting surfaces 122 and 123 each mounting one semiconductor element 178 and 174, and a second connecting portion that connects these two sides in the second direction opposite to the first direction. 124.
The first lead 116 is formed integrally with the first die pad 110 and extends in the first direction A that is separated from the semiconductor element mounting surface 112. The first lead 126 is formed integrally with the second die pad 120 and extends in the first direction A that is separated from the semiconductor element mounting surface 122.
The second lead 140 is spaced apart from the first die pad 110 and has a connection portion 142 and extends in the first direction A. The second lead 130 is disposed apart from the second die pad 120 and has a connection portion 132 and extends in the first direction A.

The semiconductor element 172 is fixed to the semiconductor element mounting surface 112, the semiconductor element 176 is fixed to the semiconductor element mounting surface 113, the semiconductor element 178 is fixed to the semiconductor element mounting surface 122, and the semiconductor element 174 is mounted on the semiconductor element mounting surface. It is fixed to the surface 123.
The first connection connector 150 has one end joined to the semiconductor elements 176 and 178 and the other end joined to the connection part 142 of the second lead 140 to electrically connect the semiconductor elements 176 and 178 and the second lead 140. To do.
The second connection connector 160 has one end joined to the semiconductor elements 172 and 174 and the other end joined to the connection part 132 of the second lead 130 to electrically connect the semiconductor elements 172 and 174 and the second lead 130. To do.

  A bent portion 118 and a second die pad 120 formed between the first die pad 110 and the first lead 116 in order to position the first leads 116 and 126 closer to the front side than the semiconductor element mounting surfaces 112, 113, 122, and 123. A bent portion 128 formed between the second lead 126 and the second lead 126 is formed from each die pad (first die pad 110 and second die pad 120).

  The first connecting part 114 in the first die pad 110 and the second connecting part 128 in the second die pad are formed with different bent parts, and the second connecting part 124 in the second die pad 120 has another bent part. A bent portion is formed.

  The first connecting portion 114 and the second connecting portion 124 are formed with a recess for ensuring insulation with the heat radiating fin mounting screw.

The resin-encapsulated semiconductor device 100 according to the first embodiment configured as described above can be assembled as follows.
FIG. 2 is a diagram illustrating a method for assembling the resin-encapsulated semiconductor device 100 according to the first embodiment. FIG. 2A to FIG. 2E are process diagrams.

  First, as shown in FIG. 2A, a lead frame as a base of the frame portion is prepared. At this time, the first leads 116 and 126 and the second leads 130 and 140 are integrated by the tie bars 106 and 108. This is to facilitate handling when assembling the resin-encapsulated semiconductor device 100. Moreover, it is for functioning the tie bar 106 as a resin sealing portion for preventing resin outflow in the resin sealing step.

  Next, as shown in FIG. 2B, the semiconductor elements (diodes) 172, 174, 176, and 178 are fixed on the semiconductor element mounting surfaces 112, 123, 113, and 122, respectively.

  Next, as shown in FIG. 2C, one end of the first connecting connector 150 is joined to the semiconductor elements 176 and 178, and the other end is joined to the connection portion 142 of the second lead 140. 176, 178 and the second lead 140 are electrically connected. In addition, one end of the second connection connector 160 is joined to the semiconductor elements 172 and 174 and the other end is joined to the connection part 132 of the second lead 130 to electrically connect the semiconductor elements 172 and 174 and the second lead 130. Connecting.

  Next, as shown in FIG. 2D, the frame portion, the semiconductor elements 172, 174, 176, 178, the first connection connector 150, and the second connection connector 160 were covered with a mold (not shown). Thereafter, the resin is sealed inside the mold and the resin is cured.

  Finally, as shown in FIG. 2E, the first leads 116 and 126 and the second leads 130 and 140 are separated from the tie bars 106 and 108 by punch cutting.

  In this way, the resin-encapsulated semiconductor device 100 according to the first embodiment can be assembled.

According to the resin-encapsulated semiconductor device 100 according to the first embodiment configured as described above and manufactured as described above, each die pad (first die pad 110 and second die pad 120) on which a semiconductor element is mounted is provided. Since it is located in the back side, the space | interval of the radiation fin and semiconductor element attached to the back side of a resin-encapsulated semiconductor device becomes small, and the outstanding heat dissipation performance is obtained.
In addition, according to the resin-encapsulated semiconductor device 100 according to the first embodiment, since each lead (the first leads 116 and 126 and the second leads 130 and 140) is located on the near side, the radiation fin and each lead The spacing is increased and excellent insulation performance is obtained.
Furthermore, according to the resin-encapsulated semiconductor device 100 according to the first embodiment, the bent portions formed between the die pads (the first die pad 110 and the second die pad 120) and the first leads 116 and 126 are each die pad. Therefore, the height along the extending direction A of each lead (first lead and second lead) is a conventional resin-encapsulated semiconductor device (single). It is lower than the in-line type bridge diode 900), and it is possible to satisfy the demand for a lower profile than in the case of the conventional resin-encapsulated semiconductor device (single in-line type bridge diode 900).

  In addition, according to the resin-encapsulated semiconductor device 100 according to the first embodiment, the first connecting portion 114 in the first die pad 110 and the second connecting portion 124 in the second die pad 120 are formed with different bent portions. Therefore, the height along the extending direction A of each lead (first lead and second lead) can be further reduced.

  In addition, according to the resin-encapsulated semiconductor device 100 according to the first embodiment, the first connecting portion 114 and the second connecting portion 124 are formed with depressions for ensuring insulation with the heat radiating fin mounting screws. Therefore, even when the first connecting portion 114 and the second connecting portion 124 are provided with bent portions, the insulation between the first connecting portion 114 or the second connecting portion 124 and the heat radiation fin mounting screw Can be secured.

[Embodiment 2]
FIG. 3 is a view for explaining the resin-encapsulated semiconductor device 200 according to the second embodiment. 3A and 3B are perspective views of the resin-encapsulated semiconductor device 200, and FIG. 3C is a cross-sectional view of the resin-encapsulated semiconductor device 200. In FIG. 3B, the resin-encapsulated semiconductor device 200 is illustrated with the resin 280 made transparent.
FIG. 4 is a diagram illustrating a method for assembling the resin-encapsulated semiconductor device 200 according to the second embodiment. 4A to 4E are process diagrams.

  The resin-encapsulated semiconductor device 200 according to the second embodiment basically has the same configuration as the resin-encapsulated semiconductor device 100 according to the first embodiment, but the resin-encapsulated semiconductor device has two semiconductor elements 272. , 274 is different from the resin-encapsulated semiconductor device 100 according to the first embodiment in that it is a resin-encapsulated semiconductor device.

  That is, the resin-encapsulated semiconductor device 200 according to the second embodiment is a resin-encapsulated semiconductor device including two semiconductor elements 272 and 274, and includes two second leads 230 and 240 as second leads. As a connecting connector, one end is joined to one semiconductor element 272 and the other end is joined to the connection part 232 of one second lead 230, and one semiconductor element 272 and one second lead 230 are connected to each other. The first connecting connector 250 to be electrically connected, one end is joined to the other semiconductor element 274 and the other end is joined to the connection portion 242 of the other second lead 240, and the other semiconductor element 274 and the other first element are joined. And a second connecting connector 260 for electrically connecting the two leads 240.

  Thus, the resin-encapsulated semiconductor device 200 according to the second embodiment is a resin-encapsulated semiconductor device according to the first embodiment in that the resin-encapsulated semiconductor device is a resin-encapsulated semiconductor device including two semiconductor elements 272 and 274. Although different from the case of the encapsulated semiconductor device 100, as in the case of the resin encapsulated semiconductor device 100 according to the first embodiment, a die pad is used to position the first lead on the front side of the semiconductor element mounting surface. Since the bent portion 218 formed between the first lead and the first lead is formed from the portion of the die pad 210, the conventional semiconductor device does not deteriorate the excellent heat dissipation performance and the excellent insulation performance. It becomes possible to satisfy the demand for lowering the height than in the case.

  The resin-encapsulated semiconductor device 200 according to the second embodiment is related to the first embodiment except that the resin-encapsulated semiconductor device is a resin-encapsulated semiconductor device including two semiconductor elements 272 and 274. Since this is the same as the case of the resin-encapsulated semiconductor device 100, the corresponding effect among the effects of the resin-encapsulated semiconductor device 100 according to the first embodiment is obtained.

[Embodiment 3]
FIG. 5 is a view for explaining the resin-encapsulated semiconductor device 300 according to the third embodiment. 5A and 5B are perspective views of the resin-encapsulated semiconductor device 300, and FIG. 5C is a cross-sectional view of the resin-encapsulated semiconductor device 300. In FIG. 5B, the resin-encapsulated semiconductor device 300 is illustrated with the resin 380 made transparent.
FIG. 6 is a diagram illustrating a method for assembling the resin-encapsulated semiconductor device 300 according to the third embodiment. FIG. 6A to FIG. 6E are process diagrams.

  The resin-encapsulated semiconductor device 300 according to the third embodiment basically has the same configuration as the resin-encapsulated semiconductor device 100 according to the first embodiment, but the resin-encapsulated semiconductor device has a three-terminal semiconductor element. This is different from the resin-encapsulated semiconductor device 100 according to the first embodiment in that it is a resin-encapsulated semiconductor device including 372.

  That is, the resin-encapsulated semiconductor device 300 according to the third embodiment is a resin-encapsulated semiconductor device including a three-terminal semiconductor element 372, and includes two second leads 330 and 340 as second leads. As a connecting connector, one end is joined to the first region of the semiconductor element 372 and the other end is joined to the connection portion 332 of the one second lead 330, so that the first region of the semiconductor element 372 and the one second lead are joined. The first connection connector 350 that electrically connects to the first connection connector 330 is joined to a second region different from the first region of the semiconductor element 372 and the other end is joined to the connection part 342 of the other second lead 340. The second connection connector 360 electrically connects the second region of the semiconductor element 372 and the second lead 340.

  Thus, the resin-encapsulated semiconductor device 300 according to the third embodiment is a resin-encapsulated semiconductor device according to the first embodiment in that the resin-encapsulated semiconductor device is a resin-encapsulated semiconductor device including a three-terminal semiconductor element 372. Although different from the case of the stationary semiconductor device 100, as in the case of the resin-encapsulated semiconductor device 100 according to the first embodiment, in order to position the first lead closer to the front side than the semiconductor element mounting surface, In the case of the conventional semiconductor device, the bent portion 318 formed between one lead is formed from the portion of the die pad 310, so that the excellent heat dissipation performance and the excellent insulation performance in the conventional semiconductor device are not deteriorated. It is possible to satisfy the demand for lower profile than that.

  The resin-encapsulated semiconductor device 300 according to the third embodiment is the resin according to the first embodiment except that the resin-encapsulated semiconductor device is a resin-encapsulated semiconductor device including a three-terminal semiconductor element 372. Since this is the same as the case of the encapsulated semiconductor device 100, it has a corresponding effect among the effects of the resin encapsulated semiconductor device 100 according to the first embodiment.

  As described above, the resin-encapsulated semiconductor device of the present invention has been described based on the above embodiment, but the present invention is not limited to this, and can be implemented without departing from the scope of the present invention. For example, the following modifications are possible.

(1) In Embodiment 1 described above, the resin-encapsulated semiconductor device of the present invention is described using a single in-line bridge diode, and in Embodiment 2 described above, a resin-encapsulated type including two semiconductor elements. The resin-encapsulated semiconductor device of the present invention will be described using a semiconductor device. In the above-described third embodiment, the resin-encapsulated semiconductor device of the present invention using a resin-encapsulated semiconductor device including a three-terminal semiconductor element. Although the apparatus has been described, the present invention is not limited to this. The present invention can also be applied to resin-encapsulated semiconductor devices other than single-inline bridge diodes, resin-encapsulated semiconductor devices including two semiconductor elements, and resin-encapsulated semiconductor devices including three-terminal semiconductor elements.

(2) In each of the above-described embodiments, the connecting connectors 150, 160, 250, 260, 350, and 360 manufactured from plate-like metal members are used as the connecting connectors. However, the present invention is not limited to this. It is not something. A wire-like connecting connector may be used as the connecting connector. In this case, the connection between the semiconductor element and the connection portion of the second lead can be connected by a wire bonding technique.

100, 200, 300 ... Resin-sealed semiconductor device, 106, 108, 206, 208, 306, 308, 906, 908 ... Tie bar, 110, 910 ... First die pad, 120, 920 ... Second die pad, 112, 113 , 122, 123, 212, 312, 912, 913, 922, 923... Semiconductor element mounting surface, 114, 914... First connection part, 116, 126, 916, 926. ... Bent part, 124,924 ... Second connecting part, 130,140,230,240,330,340,930,940 ... Second lead, 132,142,232,242,332,342,932,942 ... Connection Part, 150, 250, 350, 950... First connecting connector, 160, 260, 360, 960... Second connecting connector, 72,174,176,178,272,274,372,972,974,976,978 ... semiconductor device, 210, 310 ... die pad, 180,280,380,980 ... resin, 900 ... Single-line bridge diode

Claims (5)

A die pad having a semiconductor element mounting surface for mounting a semiconductor element, a first lead formed integrally with the die pad and extending in a first direction away from the semiconductor element mounting surface, and the die pad are spaced apart from each other. A frame portion having a second lead that has a connection portion and extends in the first direction;
The semiconductor element fixed to the semiconductor element mounting surface;
A resin-encapsulated semiconductor having one end joined to the semiconductor element and the other end joined to the connection portion of the second lead, and a connecting connector for electrically connecting the semiconductor element and the second lead A device,
When the resin-encapsulated semiconductor device is viewed from the front, a bent portion formed between the die pad and the first lead in order to position the first lead on the front side of the semiconductor element mounting surface, A resin-encapsulated semiconductor device formed from the die pad portion. The resin-encapsulated semiconductor device according to claim 1,
The resin-encapsulated semiconductor device is a single in-line bridge diode,
As the die pad, two semiconductor element mounting surfaces each mounting one semiconductor element, and a first die pad having a first connecting portion for connecting them on the first direction side, and each mounting two semiconductor elements. A second die pad having two semiconductor element mounting surfaces and a second connecting portion for connecting these in the second direction opposite to the first direction;
The resin-encapsulated semiconductor device, wherein different bent portions are formed in the first connecting portion in the first die pad and the second connecting portion in the second die pad, respectively. The resin-encapsulated semiconductor device according to claim 2,
2. A resin-encapsulated semiconductor device, wherein the first connecting portion and the second connecting portion are formed with a recess for ensuring insulation with a heat radiating fin mounting screw. The resin-encapsulated semiconductor device according to claim 1,
The resin-encapsulated semiconductor device is a resin-encapsulated semiconductor device comprising two semiconductor elements,
As the second lead, two second leads are provided,
As the connecting connector,
A first connector that has one end joined to one semiconductor element and the other end joined to a connection portion of one second lead, and electrically connects the one semiconductor element and the one second lead; ,
A second connecting connector having one end joined to the other semiconductor element and the other end joined to a connection portion of the other second lead, and electrically connecting the other semiconductor element and the second second lead; A resin-encapsulated semiconductor device comprising: The resin-encapsulated semiconductor device according to claim 1,
The resin-encapsulated semiconductor device is a resin-encapsulated semiconductor device including a three-terminal semiconductor element,
As the second lead, two second leads are provided,
As the connecting connector,
One end is joined to the first region of the semiconductor element and the other end is joined to the connection portion of one second lead to electrically connect the first region of the semiconductor element and the one second lead. A first connector,
One end is joined to a second region different from the first region of the semiconductor element, and the other end is joined to a connection portion of the other second lead, and the second region of the semiconductor element and the other second region are joined. A resin-encapsulated semiconductor device comprising a second connecting connector for electrically connecting two leads.

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