JP2012067155A - Conductive bonding material, assembly using the same, and method for manufacturing the assembly - Google Patents

Conductive bonding material, assembly using the same, and method for manufacturing the assembly Download PDF

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JP2012067155A
JP2012067155A JP2010211408A JP2010211408A JP2012067155A JP 2012067155 A JP2012067155 A JP 2012067155A JP 2010211408 A JP2010211408 A JP 2010211408A JP 2010211408 A JP2010211408 A JP 2010211408A JP 2012067155 A JP2012067155 A JP 2012067155A
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bonding material
conductive
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manufacturing
binder
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JP5827461B2 (en
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Izuru Komatsu
出 小松
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

Abstract

PROBLEM TO BE SOLVED: To provide a conductive bonding material which decreases the deterioration of reflectance, an assembly using the same, and a method for manufacturing the assembly.SOLUTION: The conductive bonding material has a first bonding material 4 and a second bonding material 5 provided on the first bonding material 4, wherein the first bonding material 4 contains first particles 9 and a first binder 10, the second bonding material 5 contains second particles 11 and a second binder 12, and the second particle 11 has relatively higher reflectance than that of a compound that the first particle 9 generates by a chemical reaction.

Description

本発明の実施形態は、導電性接合材とそれを用いた接合体、及びその接合体の製造方法に関する。   Embodiments described herein relate generally to a conductive bonding material, a bonded body using the same, and a method for manufacturing the bonded body.

近年、各種の電子機器の実装において、回路配線と電子部品とを接続する導電性接合材として半田が用いられてきたが、銀（Ａｇ）が主体の導電性接合材を用いられるようになってきている。   In recent years, solder has been used as a conductive bonding material for connecting circuit wiring and electronic components in mounting various electronic devices. However, a conductive bonding material mainly composed of silver (Ag) has been used. ing.

銀（Ａｇ）が主体の導電性接合材は、導電性媒体である銀粉又は銀粉と他の金属粉と、バインダーであるエポキシ系熱硬化性樹脂を含んで構成されている。そして、電子部品を実装する際には、基板の金属表面上に導電性接合部材を所定の膜厚で塗布した後、更にその上面に電子部品の金属面を配置して圧接し、加熱処理を行って接合を行っている。   The conductive bonding material mainly composed of silver (Ag) includes silver powder or silver powder as a conductive medium and another metal powder, and an epoxy thermosetting resin as a binder. When mounting an electronic component, after applying a conductive bonding member with a predetermined film thickness on the metal surface of the substrate, the metal surface of the electronic component is further placed on the upper surface and pressed, and heat treatment is performed. To go and join.

特開２００５−２２５９８０号公報JP 2005-225980 A

しかし、従来の導電性接合材では、例えば発光する半導体素子を実装してから時間があまり経過していない場合、発光する半導体素子から出射される光は、導電性接合材中に含まれる銀（Ａｇ）により、高い反射率で光を反射することが可能であるが、長期間経過すると、銀（Ａｇ）は大気中の硫黄（Ｓ）との反応により、黒色に変色してしまい、光の反射率が低下してしまう。   However, in the conventional conductive bonding material, for example, when not much time has passed since the light emitting semiconductor element is mounted, the light emitted from the light emitting semiconductor element is silver ( Ag) can reflect light with high reflectivity, but after a long period of time, silver (Ag) turns into black due to reaction with sulfur (S) in the atmosphere, and light The reflectivity is reduced.

そこで本発明では、反射率の低下を低減する導電性接合材とそれを用いた接合体、及びその接合体の製造方法の提供を目的とする。   Therefore, an object of the present invention is to provide a conductive bonding material that reduces a decrease in reflectance, a bonded body using the conductive bonding material, and a method for manufacturing the bonded body.

上記目的を達成するために、実施形態の導電性接合材は、第１の接合材と、第１の接合材上に設けられている第２の接合材とを有し、第１の接合材は、第１の粒子と第１のバインダーとを含み、第２の接合材は、第２の粒子と第２のバインダーとを含んで構成され、第２の粒子は、第１の粒子が化学反応により生成する化合物の反射率より相対的に高い反射率を有する粒子であることを特徴としている。   In order to achieve the above object, the conductive bonding material of the embodiment includes a first bonding material and a second bonding material provided on the first bonding material, and the first bonding material. Includes a first particle and a first binder, and the second bonding material includes a second particle and a second binder, and the second particle is a chemical compound of the first particle. It is characterized by particles having a reflectivity relatively higher than the reflectivity of the compound produced by the reaction.

また、実施形態の導電性接合材を用いた接合体は、請求項５及び請求項６に記載の導電性接合材を用いた接合体の製造方法により接続されたことを特徴としている。   Moreover, the joined body using the conductive bonding material of the embodiment is characterized in that it is connected by the method for manufacturing a joined body using the conductive bonding material according to claim 5 and claim 6.

また、実施形態の導電性接合材を用いた接合体の製造方法は、請求項１乃至請求項４に記載の導電性接合材を用いた接合体の製造方法であって、被接合部材上に第１の接合材を設ける工程と、第１の接合材上に第２の接合材を設ける工程と、第２の接合材上に電子部品をマウントする工程と、導電性接合材を硬化させる工程とを含むことを特徴としている。   Moreover, the manufacturing method of the conjugate | zygote using the electroconductive joining material of embodiment is a manufacturing method of the conjugate | zygote using the conductive bonding material of Claim 1 thru | or 4, Comprising: On a to-be-joined member A step of providing a first bonding material, a step of providing a second bonding material on the first bonding material, a step of mounting an electronic component on the second bonding material, and a step of curing the conductive bonding material It is characterized by including.

本発明の実施形態に係る導電性接合材を用いた接合体の断面図。Sectional drawing of the conjugate | zygote using the electroconductive joining material which concerns on embodiment of this invention. 本発明の実施形態に係る導電性接合材の概略図。Schematic of the conductive joining material which concerns on embodiment of this invention. 本発明の実施形態に係る導電性接合材を用いた接合体の工程断面図。Process sectional drawing of the conjugate | zygote using the electroconductive joining material which concerns on embodiment of this invention.

以下、本発明の実施形態に係る反射率の低下を低減する導電性接合材とそれを用いた接合体、及びその接合体の製造方法を、図面を参照して詳細に説明する。   Hereinafter, a conductive bonding material for reducing a decrease in reflectance according to an embodiment of the present invention, a bonded body using the same, and a method for manufacturing the bonded body will be described in detail with reference to the drawings.

まず、本発明の実施形態に係る導電性接合材と導電性接合材を用いた接合体について図１、図２を用いて説明する。図１に示すように、本実施形態における接合体１は、被接続部材２上に、導電性接合材３である第１の接合材４と第２の接合材５を順に積層して設け、更にその上に電子部品６を設けた構造となっている。   First, a conductive bonding material according to an embodiment of the present invention and a bonded body using the conductive bonding material will be described with reference to FIGS. 1 and 2. As shown in FIG. 1, the joined body 1 in the present embodiment is provided by sequentially laminating a first joining material 4 and a second joining material 5 which are conductive joining materials 3 on a connected member 2, Furthermore, it has a structure in which an electronic component 6 is provided thereon.

被接続部材２は、フレーム７にめっき層８が形成されているものであり、本実施形態では銅のフレーム上に、銀（Ａｇ）をめっきしたものを用いている。なお、本実施形態ではフレーム７に銅のフレームを用いているがこれに限られることは無く、例えば、４２Ａｌｌｏｙ等のＦｅ系合金等の金属フレーム、ＦＲ−４等の樹脂配線基板やセラミック配線基板等を用いてもよい。また、めっき層８も同様に、本実施形態では銀（Ａｇ）によりめっきしているが、これに限られることはなく、例えばＮｉ／Ｐｄ／Ａｕのように複数のめっき層８を設けても良く、導電性の材料から形成されていればよい。また、所望の導電性と接続信頼性が得られれば、被接続部材表面にめっき層を設けなくてもよい。   The member 2 to be connected has a frame 7 formed with a plating layer 8. In this embodiment, a member obtained by plating silver (Ag) on a copper frame is used. In this embodiment, a copper frame is used for the frame 7, but the present invention is not limited to this. For example, a metal frame such as an Fe alloy such as 42 Alloy, a resin wiring board such as FR-4, or a ceramic wiring board. Etc. may be used. Similarly, the plating layer 8 is plated with silver (Ag) in the present embodiment, but the present invention is not limited to this. For example, a plurality of plating layers 8 such as Ni / Pd / Au may be provided. It only has to be formed from a conductive material. Further, if desired conductivity and connection reliability are obtained, it is not necessary to provide a plating layer on the surface of the connected member.

図２に示すように、導電性接合材３である第１の接合材４は、第１の粒子９と第１のバインダー１０とを含んで構成され、第２の接合材５は、第１の接合材４の接合部分以外の領域Ａを少なくとも覆うように設けられ、第２の粒子１１と第２のバインダー１２とを含んで構成されている。   As shown in FIG. 2, the first bonding material 4 that is the conductive bonding material 3 includes the first particles 9 and the first binder 10, and the second bonding material 5 includes the first bonding material 5. The bonding material 4 is provided so as to cover at least the region A other than the bonding portion, and includes the second particles 11 and the second binder 12.

第１の粒子９は、導電性の高い材質である銀（Ａｇ）粒子を用いており、１〜１０μｍ程度の大きさのフレーク状であり、第１のバインダー１０内に分散して設けられている。なお、本実施形態に示した大きさや形状に限られることはなく、例えば、大きさとしては任意の大きさのものを用いてよく、形状としては球状等どの様な形状でもよく、併用してもよい。また、本実施形態では銀（Ａｇ）粒子だけを用いているが、これに限られることはなく、銀（Ａｇ）粒子と他の導電性の金属を分散させたものを用いても良い。   The first particles 9 are made of silver (Ag) particles, which is a highly conductive material, are in the form of flakes having a size of about 1 to 10 μm, and are dispersed in the first binder 10. Yes. The size and shape shown in the present embodiment are not limited, and for example, the size may be an arbitrary size, and the shape may be any shape such as a spherical shape. Also good. In this embodiment, only silver (Ag) particles are used. However, the present invention is not limited to this, and silver (Ag) particles and other conductive metals dispersed may be used.

第１のバインダー１０は、エポキシ樹脂と、硬化剤とを含んで構成されている。なお、本実施形態ではエポキシ樹脂を用いているが、これに限られることはなく、熱硬化性樹脂であればどの様な材質のものを用いても良い。   The first binder 10 includes an epoxy resin and a curing agent. In this embodiment, an epoxy resin is used. However, the present invention is not limited to this, and any material may be used as long as it is a thermosetting resin.

第２の粒子１１は、導電性の金属を用いており、金属単体を用いる場合は、銀（Ａｇ）よりも硫化物及び酸化物の生成自由エネルギーが低く、また硫化物及び酸化物を形成すると、反射率が硫化銀（Ａｇ２Ｓ）の反射率（１０〜２０％）よりも高いもの、あるいは光の透過率が高く、銀（Ａｇ）による反射が可能なものを用いている。また、第２の粒子１１は第２のバインダー１２内に分散して設けられており、大きさとしては、０．１〜１μｍ程度で、球状の形状のものを用いている。なお、第２の粒子の形状は球状に限られることはなく、どの様な形状であっても良い。 The second particle 11 uses a conductive metal, and when a single metal is used, the free energy of formation of sulfide and oxide is lower than that of silver (Ag), and the sulfide and oxide are formed. Further, a material having a reflectance higher than that of silver sulfide (Ag 2 S) (10 to 20%) or a material having a high light transmittance and capable of being reflected by silver (Ag) is used. The second particles 11 are dispersed in the second binder 12 and have a size of about 0.1 to 1 μm and a spherical shape. Note that the shape of the second particles is not limited to a spherical shape, and may be any shape.

本実施形態では、第２の粒子１１として亜鉛（Ｚｎ）を用いている。亜鉛（Ｚｎ）は、第１の粒子９より電気伝導率が低いが、銀（Ａｇ）よりも硫化物及び酸化物の生成自由エネルギーが低く、第１の粒子９である銀（Ａｇ）よりも早く硫化又は酸化することから、銀（Ａｇ）の反射率の低下を低減することが出来る。また、硫化物である硫化亜鉛（ＺｎＳ）の光透過率は５０〜６０％程度で、酸化物である酸化亜鉛（ＺｎＯ）の光透過率は７０〜８０％程度であることから、亜鉛（Ｚｎ）の化合物が光透過性であることがわかり、第１の粒子９による光の反射が可能となるため、反射率の低下を低減することが可能となる。   In the present embodiment, zinc (Zn) is used as the second particles 11. Zinc (Zn) has lower electrical conductivity than the first particles 9, but has lower free energy of formation of sulfides and oxides than silver (Ag), and is lower than silver (Ag) as the first particles 9. Since sulfurization or oxidation occurs quickly, a decrease in the reflectance of silver (Ag) can be reduced. Furthermore, zinc sulfide (ZnS), which is a sulfide, has a light transmittance of about 50 to 60%, and zinc oxide (ZnO), which is an oxide, has a light transmittance of about 70 to 80%. It can be seen that the compound (1) is light-transmitting, and light can be reflected by the first particles 9, so that a reduction in reflectance can be reduced.

なお、本実施形態では亜鉛（Ｚｎ）を用いているが、これに限られることはなく、例えばアルミニウム（Ａｌ）やマグネシウム（Ｍｇ）でもよく、また亜鉛（Ｚｎ）、アルミニウム（Ａｌ）、マグネシウム（Ｍｇ）のうち少なくとも１種類以上を選択してもよい。   In this embodiment, zinc (Zn) is used. However, the present invention is not limited to this. For example, aluminum (Al) or magnesium (Mg) may be used, and zinc (Zn), aluminum (Al), magnesium ( At least one kind of Mg) may be selected.

アルミニウム（Ａｌ）の場合、硫化物である硫化アルミニウム（Ａｌ２Ｓ３）の反射率は９０％程度、また酸化物である酸化アルミニウム（Ａｌ２Ｏ３）の反射率は８０〜８５％程度となっている。そして、マグネシウム（Ｍｇ）の場合、硫化物である硫化マグネシウム（ＭｇＳ）の反射率は７５％程度、また酸化物である酸化マグネシウム（ＭｇＯ）の反射率は９９％程度となっている。そのため、第１の粒子９である銀（Ａｇ）よりも早く硫化又は酸化することにより、銀（Ａｇ）の変色を低減することが出来、更に化合物の反射率が高いため、反射率の低下を低減することが可能となる。 In the case of aluminum (Al), the reflectance of aluminum sulfide (Al 2 S 3 ) which is a sulfide is about 90%, and the reflectance of aluminum oxide (Al 2 O 3 ) which is an oxide is about 80 to 85%. It has become. In the case of magnesium (Mg), the reflectance of magnesium sulfide (MgS) as a sulfide is about 75%, and the reflectance of magnesium oxide (MgO) as an oxide is about 99%. Therefore, it is possible to reduce the discoloration of silver (Ag) by sulfidation or oxidation faster than silver (Ag) as the first particle 9, and the reflectance of the compound is high. It becomes possible to reduce.

また、第２の粒子１１として導電性の化合物を用いる事も可能である。例えば、硫化亜鉛（ＺｎＳ）、硫化アルミニウム（Ａｌ２Ｓ３）、硫化マグネシウム（ＭｇＳ）、酸化亜鉛（ＺｎＯ）から少なくとも１種類以上を選択してもよく、更に金属単体と化合物の組み合わせを選択してもよい。このように、あらかじめ第２の粒子１１に化合物を用いることにより、安定した反射率を確保することが可能となるため、反射率の低下を低減することが可能となる。 In addition, a conductive compound can be used as the second particles 11. For example, at least one or more of zinc sulfide (ZnS), aluminum sulfide (Al 2 S 3 ), magnesium sulfide (MgS), and zinc oxide (ZnO) may be selected, and a combination of a simple metal and a compound may be selected. May be. Thus, by using a compound for the second particles 11 in advance, it is possible to ensure a stable reflectance, and thus it is possible to reduce a decrease in reflectance.

第２のバインダー１２は、第１のバインダー１０と同様に、エポキシ樹脂と、硬化剤とを含んで構成されている。なお、本実施形態ではエポキシ樹脂を用いているが、これに限られることはなく、熱硬化性樹脂であればどの様な材質のものを用いても良い。また、第２の粒子１１に亜鉛（Ｚｎ）を含むものを用いる場合、酸素を透過し難い材質のものを用いるとよい。これにより、銀（Ａｇ）の変色を防ぐことが可能となり、光の反射率の低下を低減することが可能となる。   Similar to the first binder 10, the second binder 12 includes an epoxy resin and a curing agent. In this embodiment, an epoxy resin is used. However, the present invention is not limited to this, and any material may be used as long as it is a thermosetting resin. In addition, in the case where a material containing zinc (Zn) is used for the second particle 11, a material that does not easily transmit oxygen may be used. Thereby, discoloration of silver (Ag) can be prevented, and a decrease in light reflectance can be reduced.

電子部品６としては、図１に示すように半導体素子を用いており、具体的にはＬＥＤ素子を用いている。   As the electronic component 6, a semiconductor element is used as shown in FIG. 1, and specifically, an LED element is used.

次に、導電性接合材を用いた接合体の製造方法について図３を用いて説明する。   Next, a method for manufacturing a joined body using a conductive joining material will be described with reference to FIG.

まず、図３（ａ）に示すように、被接続部材２上へ、スタンパ１３を用いて第１の接合材４を供給する。本実施形態では、スタンパ１３を用いて第１の接合材４を設けているが、被接続部材２上へ第１の接合材４を設けることが可能であればこれに限られることはなく、例えばディスペンサ等を用いて設けても良い。   First, as shown in FIG. 3A, the first bonding material 4 is supplied onto the connected member 2 using the stamper 13. In the present embodiment, the first bonding material 4 is provided using the stamper 13. However, the first bonding material 4 is not limited to this as long as the first bonding material 4 can be provided on the connected member 2. For example, a dispenser or the like may be used.

そして、図３（ｂ）に示すように、第１の接合材４を覆うように、第２の接合材５をディスペンサ１４により滴下して設ける。この時、第２の接合材５は、第１の接合材４の粘度より低いものを用いて設ける。これは、次の工程である図３（ｃ）に示すように、電子部品６をマウンタ１５により第２の接合材５上にマウントする際に、第２の接合材５を押し出し、第１の接合材４の接合部分以外の領域Ａへと多く設けるためである。   And as shown in FIG.3 (b), the 2nd joining material 5 is dripped and provided with the dispenser 14 so that the 1st joining material 4 may be covered. At this time, the second bonding material 5 is provided using a material having a viscosity lower than that of the first bonding material 4. As shown in FIG. 3C, which is the next step, when the electronic component 6 is mounted on the second bonding material 5 by the mounter 15, the second bonding material 5 is extruded, This is because a large amount is provided in the region A other than the bonding portion of the bonding material 4.

これにより、第１の粒子９である銀（Ａｇ）の硫化又は酸化を低減することができ、そして第２の粒子１１である亜鉛（Ｚｎ）が化合物となった際に、銀（Ａｇ）により光を反射することが出来るため、反射率の低下を低減することが可能となる。   Thereby, the sulfidation or oxidation of silver (Ag) as the first particles 9 can be reduced, and when zinc (Zn) as the second particles 11 becomes a compound, the silver (Ag) Since light can be reflected, it is possible to reduce a decrease in reflectance.

更に、電子部品６と第１の接合材４との間の第２の接合材５を押し出すことにより、非導電物質である第２のバインダー１２と、第１の粒子９よりも電気伝導率の低い第２の粒子１１を減らす事が可能となるので、被接続部材２と電子部品６の電気伝導率の低下を低減することも可能となる。   Furthermore, by extruding the second bonding material 5 between the electronic component 6 and the first bonding material 4, the second binder 12, which is a non-conductive substance, has a higher electrical conductivity than the first particles 9. Since it becomes possible to reduce the low 2nd particle | grains 11, it also becomes possible to reduce the fall of the electrical conductivity of the to-be-connected member 2 and the electronic component 6. FIG.

その後、図３（ｄ）に示すように、導電性接合材３により接合された接合体１は加熱装置１６により加熱され、導電性接合材３を硬化させる。   Thereafter, as shown in FIG. 3D, the joined body 1 joined by the conductive joining material 3 is heated by the heating device 16 to cure the conductive joining material 3.

以上、本発明の実施形態によれば、導電性接合材３は、第１の粒子９と第１のバインダー１０とを含む第１の接合材４上に、第１の粒子９より化学反応がしやすいもの、又は反射率が第１の粒子９の化合物の反射率より高い化合物、あるいは光の透過率が高い化合物である第２の粒子１１と第２のバインダー１２とを含む第２の接合材５を積層して構成されている。また、導電性接合材３を用いた接合体１を製造する際には、被接続部材２上に、導電性接合材３である第１の接合材４と、第１の接合材４より粘度の低い第２の接合材５とを積層して設け、更にその上に電子部品６をマウントし、押し出された第２の接合材５を、第１の接合材４の接合部分以外の領域Ａへと多く設けるようにして製造をおこなっている。これにより、長期経過しても第１の粒子９の化学反応を低減しながら光の反射率の低下を低減することが可能となる。更に、導電率の低下を低減することが可能となる。   As described above, according to the embodiment of the present invention, the conductive bonding material 3 is more chemically reacted than the first particles 9 on the first bonding material 4 including the first particles 9 and the first binder 10. A second bond that includes the second particles 11 and the second binder 12 that are easily compounded, a compound having a reflectance higher than that of the compound of the first particles 9, or a compound having a high light transmittance. The material 5 is laminated. Moreover, when manufacturing the joined body 1 using the conductive bonding material 3, the viscosity of the first bonding material 4 that is the conductive bonding material 3 and the viscosity of the first bonding material 4 on the connected member 2. The second bonding material 5 having a low thickness is provided in a stacked manner, and the electronic component 6 is mounted thereon, and the extruded second bonding material 5 is disposed in a region A other than the bonding portion of the first bonding material 4. Manufacture is carried out in such a way that many are provided. Thereby, even if it passes for a long time, it becomes possible to reduce the fall of the reflectance of light, reducing the chemical reaction of the 1st particle | grains 9. FIG. Furthermore, it is possible to reduce the decrease in conductivity.

本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他のさまざまな形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。   Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

１…接合体
２…被接続部材
３…導電性接合材
４…第１の接合材
５…第２の接合材
６…電子部品
７…フレーム
８…めっき層
９…第１の粒子
１０…第１のバインダー
１１…第２の粒子
１２…第２のバインダー
１３…スタンパ
１４…ディスペンサ
１５…マウンタ
１６…加熱装置
Ａ…領域 DESCRIPTION OF SYMBOLS 1 ... Bonded body 2 ... Connected member 3 ... Conductive bonding material 4 ... 1st bonding material 5 ... 2nd bonding material 6 ... Electronic component 7 ... Frame 8 ... Plating layer 9 ... 1st particle | grain 10 ... 1st Binder 11 ... second particle 12 ... second binder 13 ... stamper 14 ... dispenser 15 ... mounter 16 ... heating device A ... region

Claims (7)

第１の接合材と、前記第１の接合材上に設けられている第２の接合材とを有し、
前記第１の接合材は、導電性を有する第１の粒子と、第１のバインダーとを含み、
前記第２の接合材は、導電性を有する第２の粒子と第２のバインダーとを含んで構成され、
前記第２の粒子は、前記第１の粒子が化学反応により生成する化合物の反射率より相対的に高い反射率を有する粒子であることを特徴とする導電性接合材。 A first bonding material and a second bonding material provided on the first bonding material;
The first bonding material includes first particles having conductivity and a first binder,
The second bonding material includes conductive second particles and a second binder,
Said 2nd particle | grain is a particle | grain which has a reflectance relatively higher than the reflectance of the compound which said 1st particle | grain produces | generates by a chemical reaction, The electrically conductive joining material characterized by the above-mentioned. 前記第２の粒子は、金属粒子であり、前記金属粒子に含まれる金属元素は、前記第１の粒子より化学反応しやすいものであることを特徴とする請求項１記載の導電性接合材。   2. The conductive bonding material according to claim 1, wherein the second particles are metal particles, and the metal element contained in the metal particles is more easily chemically reacted than the first particles. 前記第２の粒子は、Ｚｎ、Ａｌ、Ｍｇ、ＺｎＳ、Ａｌ２Ｓ３、ＭｇＳ、ＺｎＯから選ばれる少なくとも１種を含んでいることを特徴とする請求項１又は請求項２に記載の導電性接合材。 3. The conductive material according to claim 1, wherein the second particles include at least one selected from Zn, Al, Mg, ZnS, Al 2 S 3 , MgS, and ZnO. Bonding material. 前記第１の粒子はＡｇであることを特徴とする請求項１乃至請求項３に記載の導電性接合材。   The conductive bonding material according to claim 1, wherein the first particles are Ag. 請求項１乃至請求項４に記載の導電性接合材を用いた接合体の製造方法であって、
被接合部材上に前記第１の接合材を設ける工程と、
前記第１の接合材上に前記第２の接合材を設ける工程と、
前記第２の接合材上に電子部品をマウントする工程と、
前記導電性接合材を硬化させる工程と、
を含むことを特徴とする導電性接合材を用いた接合体の製造方法。 A method for manufacturing a joined body using the conductive joining material according to claim 1,
Providing the first bonding material on the member to be bonded;
Providing the second bonding material on the first bonding material;
Mounting an electronic component on the second bonding material;
Curing the conductive bonding material;
The manufacturing method of the conjugate | zygote using the electroconductive joining material characterized by including. 前記第２の接合材は前記第１の接合材より粘度が低いことを特徴とする請求項５記載の導電性接合材を用いた接合体の製造方法。   6. The method for manufacturing a joined body using a conductive joining material according to claim 5, wherein the second joining material has a viscosity lower than that of the first joining material. 請求項５及び請求項６に記載の導電性接合材を用いた接合体の製造方法により接続されたことを特徴とする導電性接合材を用いた接合体。   A bonded body using a conductive bonding material, wherein the bonded body is connected by the method for manufacturing a bonded body using the conductive bonding material according to claim 5.
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