JP2012065429A - Power inverter circuit - Google Patents

Power inverter circuit Download PDF

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Publication number
JP2012065429A
JP2012065429A JP2010206876A JP2010206876A JP2012065429A JP 2012065429 A JP2012065429 A JP 2012065429A JP 2010206876 A JP2010206876 A JP 2010206876A JP 2010206876 A JP2010206876 A JP 2010206876A JP 2012065429 A JP2012065429 A JP 2012065429A
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voltage
input
circuit
semiconductor switching
arm
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Japanese (ja)
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Hirotomo Yoshida
大智 吉田
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483Converters with outputs that each can have more than two voltages levels
    • H02M7/487Neutral point clamped inverters

Abstract

PROBLEM TO BE SOLVED: To provide a power inverter circuit with low loss in a low power area, which has high conversion efficiency.SOLUTION: In the power inverter circuit that has a plurality of semiconductor switching devices on each arm and converts an input DC voltage into an AC voltage of any given frequency, a bidirectional switch having reverse blocking capability is connected between a voltage midpoint that divides an input DC voltage in half and a midpoint of one side arm of the semiconductor switching device.

Description

この発明は、半導体スイッチングデバイスを用いた電力変換装置の回路に関する。   The present invention relates to a circuit of a power conversion device using a semiconductor switching device.

半導体スイッチングデバイス、例えば絶縁ゲート型バイポーラトランジスタ(IGBT)などの素子の高速スイッチング機能を利用して電力変換を行う装置は、産業・インフラ用の大出力のものから、家庭用の小容量のものまで幅広く存在している。
産業、インフラ用の機器は比較的容量が大きく、直流電圧を単相の交流電圧に変換する回路形式として、特許文献1に示されるようなフルブリッジ型の電力変換回路が良く用いられている。
Devices that perform power conversion using the high-speed switching function of semiconductor switching devices, such as insulated gate bipolar transistors (IGBTs), range from large outputs for industry and infrastructure to small capacities for home use. Widely exists.
Industrial and infrastructure equipment has a relatively large capacity, and a full bridge type power conversion circuit as shown in Patent Document 1 is often used as a circuit format for converting a DC voltage into a single-phase AC voltage.

特開2000−228881号公報(図6等)JP 2000-228881 (FIG. 6 etc.)

しかしながら、入力の直流電圧が固定されているハードスイッチング型の高周波インバータもしくはDC−DCコンバータにおいて、低出力域に掛かるとスイッチング素子のオン時間(オンパルス)が短くなる。図5に示す従来の回路(図5はインバータの場合を示す)では、オンパルスのきわめて短い低出力域において、所望の出力が得にくくなったり、最悪の場合、要求される出力を与えるパルス幅で回路のスイッチング素子を駆動できなくなったりするという問題があった。   However, in a hard-switching high-frequency inverter or DC-DC converter in which the input DC voltage is fixed, the on-time (on-pulse) of the switching element is shortened when the low-output region is applied. In the conventional circuit shown in FIG. 5 (FIG. 5 shows the case of an inverter), it becomes difficult to obtain a desired output in the low output region where the on-pulse is very short, or in the worst case, the pulse width gives the required output. There is a problem that the switching element of the circuit cannot be driven.

上記課題を解決する手段としては、入力の直流電圧を制御する方法が考えられる。
ところが、それを行うためには入力直流電圧の前段に更に電力変換回路が必要となり、
装置の大型化、高価化という別の課題が発生する。
本発明は上記の課題を、安価かつ簡便に解決する装置を提供するものである。
As a means for solving the above problem, a method of controlling the input DC voltage is conceivable.
However, in order to do that, an additional power conversion circuit is required before the input DC voltage.
Another problem of increasing the size and cost of the device occurs.
The present invention provides an apparatus that solves the above-mentioned problems inexpensively and easily.

上記目的を達成するために本発明では、フルブリッジ型の電力変換回路の片側アームの中点と、何らかの手段によって2分割された入力直流電圧の中間電圧との間を、逆耐圧を持たせた双方向スイッチを介して接続させる。
そして、高出力時においては、該双方向スイッチは作動せず、1対の上下アームが作動するフルブリッジ運転を行う。
また、低出力時においては、双方向スイッチが接続されたアームのスイッチングデバイスを作動させず、双方向スイッチを全導通状態にすることで、ハーフブリッジ回路を構成する。
In order to achieve the above object, in the present invention, a reverse breakdown voltage is provided between the midpoint of one arm of a full-bridge type power conversion circuit and the intermediate voltage of the input DC voltage divided into two by some means. Connect via a bidirectional switch.
At the time of high output, the bidirectional switch does not operate, and a full bridge operation is performed in which a pair of upper and lower arms operate.
Further, at the time of low output, the half-bridge circuit is configured by setting the bidirectional switch to a fully conductive state without operating the switching device of the arm to which the bidirectional switch is connected.

この発明によれば、ハーフブリッジ回路では同一出力条件において、オンパルスがフルブリッジ回路の2倍になるため、低出力域におけるオンパルスの極小化による悪影響を回避することが可能になる。この結果、高出力域までの全領域において、総合的に高効率の電力変換を行うことが可能となる。   According to the present invention, since the on-pulse is twice that of the full-bridge circuit under the same output condition in the half-bridge circuit, it is possible to avoid an adverse effect due to the minimization of the on-pulse in the low output region. As a result, overall high-efficiency power conversion can be performed in the entire region up to the high output region.

この発明の第1の実施形態を示す回路図1 is a circuit diagram showing a first embodiment of the present invention. この発明の第2の実施形態を示す回路図Circuit diagram showing a second embodiment of the present invention この発明の第3の実施形態を示す回路図Circuit diagram showing a third embodiment of the present invention この発明の第4の実施形態を示す回路図Circuit diagram showing a fourth embodiment of the present invention 従来のフルブリッジ回路図Conventional full-bridge circuit diagram

図1、図2に本明細書において提案する電力変換回路を示す。図1はインバータ、図2はDC−DCコンバータとして構成した例である。もちろん、半導体スイッチング素子後段の負荷側の構成は図1、図2に示した方法に限るものではない。
ここでは、スイッチングアームと逆阻止能力を有す双方向スイッチング素子を一つのモジュールにパッケージングしたデバイスを用いることにより、所要のスイッチングモジュールを最小限に抑えることが可能となり、低コスト化はもちろん、低損失で安価に発明を実施することが可能である。
1 and 2 show a power conversion circuit proposed in this specification. 1 is an example of an inverter, and FIG. 2 is an example of a DC-DC converter. Of course, the configuration on the load side after the semiconductor switching element is not limited to the method shown in FIGS.
Here, it is possible to minimize the required switching module by using a device in which a bidirectional switching element having reverse blocking capability and a switching arm is packaged in one module, and of course, cost reduction, It is possible to implement the invention with low loss and low cost.

図1に本発明の第1の実施形態を示す。図1の回路は、直流入力電圧をスイッチングして交流電圧を出力するインバータ回路である。ここで、高出力時においては、双方向スイッチ5をオフし、1対の上下アームのスイッチング素子1〜4が作動するフルブリッジによる電力変換を行う。一方、低出力時においては、双方向スイッチ5が接続されたアームの半導体スイッチング素子1、2が作動せず、双方向スイッチ5を全導通状態にする。   FIG. 1 shows a first embodiment of the present invention. The circuit of FIG. 1 is an inverter circuit that switches a DC input voltage and outputs an AC voltage. Here, at the time of high output, the bidirectional switch 5 is turned off, and power conversion is performed by a full bridge in which the switching elements 1 to 4 of the pair of upper and lower arms are operated. On the other hand, at the time of low output, the semiconductor switching elements 1 and 2 of the arm to which the bidirectional switch 5 is connected do not operate, and the bidirectional switch 5 is brought into a full conduction state.

図2に本発明の第2の実施形態を示す。図2の回路は、直流入力電圧をスイッチングして交流電圧に変換し、ダイオードにて構成される整流回路6によって、再度所望の直流電圧に変換するDC−DC変換回路である。もちろん、交流から直流への再変換部は図2に示す形態に限定されるものではない。この例においても、高出力時においては、双方向スイッチ5をオフし、1対の上下アームのスイッチング素子1〜4が作動するフルブリッジによる電力変換を行い、低出力時においては、双方向スイッチ5が接続されたアームの半導体スイッチング素子1、2が作動させず、双方向スイッチ5を全導通状態とする。
図3には、図1の回路の亜種としての、出力部に変圧器7を挿入して入力と出力とを絶縁した回路を示す。
FIG. 2 shows a second embodiment of the present invention. The circuit shown in FIG. 2 is a DC-DC conversion circuit that switches a DC input voltage to an AC voltage and converts it again into a desired DC voltage by a rectifier circuit 6 composed of a diode. Of course, the AC to DC reconverter is not limited to the form shown in FIG. Also in this example, the bidirectional switch 5 is turned off at the time of high output, power conversion is performed by a full bridge in which the switching elements 1 to 4 of the pair of upper and lower arms are operated, and the bidirectional switch at the time of low output. The semiconductor switching elements 1 and 2 of the arm to which 5 is connected are not operated, and the bidirectional switch 5 is brought into a fully conductive state.
FIG. 3 shows a circuit as a variant of the circuit of FIG. 1 in which a transformer 7 is inserted in the output section and the input and output are insulated.

また図4には、図2の回路の亜種としての、インバータ部とダイオード整流器6との間に変圧器7を挿入して入力と出力とを絶縁した回路を示す。本実施例においても、交流から直流への再変換部は図4に示す形態に限定されるものではない。
いずれの形態においても、高出力時と低出力時に双方向スイッチのオン・オフを切替えるものであるが、この切替えにあたっては、例えば出力電圧などの指令値を、予め定めた基準値と比較する等、様々な手段が考えられる。
FIG. 4 shows a circuit in which a transformer 7 is inserted between the inverter unit and the diode rectifier 6 as a variant of the circuit of FIG. Also in the present embodiment, the AC to DC reconverter is not limited to the form shown in FIG.
In any form, the bidirectional switch is switched on / off at the time of high output and low output. For this switching, for example, a command value such as an output voltage is compared with a predetermined reference value, etc. Various means are conceivable.

1、2、3、4…半導体スイッチング素子、5…双方向スイッチ、6…整流器、7…変圧器絶縁部。   1, 2, 3, 4 ... semiconductor switching element, 5 ... bidirectional switch, 6 ... rectifier, 7 ... transformer insulation.

Claims (2)

各アームに複数の半導体スイッチングデバイスを備え、入力直流電圧を任意の周波数の交流電圧に変換する電力変換回路であって、
入力直流電圧を半分の電圧に分割する電圧中点と半導体スイッチングデバイスの片側アームの中点との間に、逆阻止能力を有す双方向スイッチを接続したことを特徴とする電力変換回路。
A power conversion circuit that includes a plurality of semiconductor switching devices in each arm and converts an input DC voltage to an AC voltage of an arbitrary frequency,
A power converter circuit comprising a bidirectional switch having a reverse blocking capability connected between a midpoint of a voltage that divides an input DC voltage into half voltage and a midpoint of one arm of a semiconductor switching device.
各アームに複数の半導体スイッチングデバイスを備え、入力直流電圧を任意の周波数の交流電圧に変換し、その交流電圧を整流器により直流電圧に再変換するDC−DC変換回路であって、
入力直流電圧を半分の電圧に分割する電圧中点と半導体スイッチングデバイスの片側アームの中点との間に、逆阻止能力を有す双方向スイッチを接続したことを特徴とする電力変換回路。
A DC-DC conversion circuit comprising a plurality of semiconductor switching devices in each arm, converting an input DC voltage to an AC voltage of an arbitrary frequency, and reconverting the AC voltage into a DC voltage by a rectifier,
A power converter circuit comprising a bidirectional switch having a reverse blocking capability connected between a midpoint of a voltage that divides an input DC voltage into half voltage and a midpoint of one arm of a semiconductor switching device.
JP2010206876A 2010-09-15 2010-09-15 Power inverter circuit Withdrawn JP2012065429A (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04361872A (en) * 1991-06-11 1992-12-15 Matsushita Electric Ind Co Ltd Inverter welding power source
JP2000228881A (en) * 1999-02-04 2000-08-15 Fuji Electric Co Ltd Control of inverter apparatus
JP2000350476A (en) * 1999-06-02 2000-12-15 Fuji Electric Co Ltd Dc-ac power conversion circuit
JP2002171759A (en) * 2000-05-10 2002-06-14 Hitachi Medical Corp Dc-dc converter and x-ray high-voltage generator using the same
JP2002233150A (en) * 2001-02-05 2002-08-16 Toshiba Corp Resonance-type dc-to-dc converter
US20050078491A1 (en) * 2001-12-28 2005-04-14 Wei Song Dc-dc converters providing reduced deadtime
JP2007028860A (en) * 2005-07-21 2007-02-01 Hitachi Ltd Power-converting device and rolling stock equipped with the same
JP2010252450A (en) * 2009-04-13 2010-11-04 Fuji Electric Systems Co Ltd Power conversion apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04361872A (en) * 1991-06-11 1992-12-15 Matsushita Electric Ind Co Ltd Inverter welding power source
JP2000228881A (en) * 1999-02-04 2000-08-15 Fuji Electric Co Ltd Control of inverter apparatus
JP2000350476A (en) * 1999-06-02 2000-12-15 Fuji Electric Co Ltd Dc-ac power conversion circuit
JP2002171759A (en) * 2000-05-10 2002-06-14 Hitachi Medical Corp Dc-dc converter and x-ray high-voltage generator using the same
JP2002233150A (en) * 2001-02-05 2002-08-16 Toshiba Corp Resonance-type dc-to-dc converter
US20050078491A1 (en) * 2001-12-28 2005-04-14 Wei Song Dc-dc converters providing reduced deadtime
JP2007028860A (en) * 2005-07-21 2007-02-01 Hitachi Ltd Power-converting device and rolling stock equipped with the same
JP2010252450A (en) * 2009-04-13 2010-11-04 Fuji Electric Systems Co Ltd Power conversion apparatus

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