JP2012060165A5

JP2012060165A5 -

Info

Publication number: JP2012060165A5
Application number: JP2011273243A
Authority: JP
Filing date: 2011-12-14
Publication date: 2012-05-31
Anticipated expiration: 2021-08-14

Claims

A first semiconductor light emitting layer from which a substrate during crystal growth for emitting predetermined light is removed;
A second semiconductor light-emitting layer that is composed of a semiconductor layer made of a different crystal system from the first semiconductor light-emitting layer and emits light when excited by light from the first semiconductor light-emitting layer;
The emission wavelength from the first semiconductor light emitting layer is different from the emission wavelength from the second semiconductor light emitting layer,
A semiconductor light emitting element characterized by the above.

2. The semiconductor light emitting device according to claim 1, wherein the first semiconductor light emitting layer has a wurtzite crystal structure, and the second semiconductor light emitting layer has a zinc blende crystal structure.

2. The semiconductor light emitting device according to claim 1, wherein the first semiconductor light emitting layer comprises a gallium nitride based semiconductor layer.

2. The semiconductor light emitting element according to claim 1, wherein the second semiconductor light emitting layer comprises a semiconductor layer selected from an AlGaInP semiconductor layer, an AlGaInAs semiconductor layer, a GaInNAs semiconductor layer, and a GaInAsP semiconductor layer.

2. The semiconductor light emitting device according to claim 1, wherein the first semiconductor light emitting layer is formed in the semiconductor structure portion including a pointed growth layer formed by selective growth.

2. The semiconductor light emitting device according to claim 1, wherein the first semiconductor light emitting layer and the second semiconductor light emitting layer have different emission wavelengths.

2. The semiconductor light emitting element according to claim 1, wherein the second semiconductor light emitting layer is formed on a growth substrate, and the growth substrate is peeled off by ablation or etching.

The second semiconductor light-emitting layer side, the semiconductor light-emitting device according to claim 1, that the feature via the adhesive layer bonded to the first semiconductor light-emitting layer side.

A first semiconductor light emitting layer formed in a resin package, from which a substrate for crystal growth that emits predetermined light is removed;
A second semiconductor light-emitting layer that is composed of a semiconductor layer made of a different crystal system from the first semiconductor light-emitting layer, is excited by light from the first semiconductor light-emitting layer, and emits light;
A semiconductor light emitting element, wherein an emission wavelength from the first semiconductor light emitting layer is different from an emission wavelength from the second semiconductor light emitting layer.

10. The semiconductor light emitting device according to claim 9, wherein the first semiconductor light emitting layer and the second semiconductor light emitting layer are composed of semiconductor layers made of different crystal systems.

10. The semiconductor light emitting device according to claim 9, wherein the first semiconductor light emitting layer has a wurtzite crystal structure, and the second semiconductor light emitting layer has a zinc blende crystal structure.

The semiconductor light emitting element according to claim 9, wherein the first semiconductor light emitting layer is made of a gallium nitride based semiconductor layer.

10. The semiconductor light emitting element according to claim 9, wherein the second semiconductor light emitting layer comprises a semiconductor layer selected from an AlGaInP based semiconductor layer, an AlGaInAs based semiconductor layer, a GaInNAs based semiconductor layer, and a GaInAsP based semiconductor layer.

10. The semiconductor light emitting device according to claim 9, wherein the first semiconductor light emitting layer is formed in a pointed growth layer formed by selective growth.

The semiconductor light emitting device according to claim 9, wherein the first semiconductor light emitting layer and the second semiconductor light emitting layer have different emission wavelengths.

10. The semiconductor light emitting device according to claim 9, wherein the second semiconductor light emitting layer is formed on a growth substrate, and the growth substrate is peeled off by ablation or etching.

The second semiconductor light-emitting layer side, the semiconductor light emitting device according to claim 9, wherein Rukoto bonded to the first semiconductor light-emitting layer side via the adhesive layer.

Forming a first semiconductor light emitting layer from which a substrate during crystal growth for emitting predetermined light is removed;
Forming a second semiconductor light emitting layer that is composed of a semiconductor layer made of a different crystal system from the first semiconductor light emitting layer, and is excited by light from the first semiconductor light emitting layer to emit light;
A method of manufacturing a semiconductor light emitting element, wherein an emission wavelength from the first semiconductor light emitting layer and an emission wavelength from the second semiconductor light emitting layer are different.

The second semiconductor light emitting layer is formed by being laminated on a substrate,
19. The semiconductor light emitting element according to claim 18 , wherein the second semiconductor light emitting layer is peeled off from the substrate when the second semiconductor light emitting layer side is bonded to the first semiconductor light emitting layer side. Manufacturing method.

The method of manufacturing a semiconductor light emitting element according to claim 18, wherein the second semiconductor light emitting layer is peeled off from the substrate by laser ablation.

The method of manufacturing a semiconductor light emitting element according to claim 18, wherein the second semiconductor light emitting layer is peeled off from the substrate by removing the substrate by etching.

Forming a first semiconductor light emitting layer formed in a resin package, from which a substrate during crystal growth that emits predetermined light is removed;
Forming a second semiconductor light emitting layer that is composed of a semiconductor layer made of a different crystal system from the first semiconductor light emitting layer, and is excited by light from the first semiconductor light emitting layer to emit light;
The emission wavelength from the first semiconductor light emitting layer is different from the emission wavelength from the second semiconductor light emitting layer,
A method for manufacturing a semiconductor light emitting device.

The second semiconductor light-emitting layer is formed by stacking on a substrate, the second semiconductor light-emitting layer side when bonding the first semiconductor light-emitting layer side, the second semiconductor light-emitting layer is the The method for manufacturing a semiconductor light emitting device according to claim 22, wherein the method is peeled off from the substrate.

23. The method of manufacturing a semiconductor light emitting element according to claim 22, wherein the second semiconductor light emitting layer is peeled off from the substrate by laser ablation.

The method of manufacturing a semiconductor light emitting element according to claim 21, wherein the peeling of the second semiconductor light emitting layer from the substrate is performed by removing the substrate by etching.

Forming a plurality of semiconductor structures having a first semiconductor light emitting layer from which a substrate during crystal growth for emitting predetermined light is removed;
A part of the plurality of semiconductor structure portions includes a semiconductor layer made of a crystal system different from that of the first semiconductor light emitting layer that is excited by light from the first semiconductor light emitting layer and emits light. The second semiconductor light emitting layer side to be bonded,
A semiconductor light emitting device, wherein an emission wavelength from the first semiconductor light emitting layer is different from an emission wavelength from the second semiconductor light emitting layer.

A first semiconductor light emitting layer that emits predetermined light;
A second semiconductor light-emitting layer that is composed of a semiconductor layer made of a different crystal system from the first semiconductor light-emitting layer and emits light when excited by light from the first semiconductor light-emitting layer;
The second semiconductor light emitting layer side is bonded to the first semiconductor light emitting layer side,
The emission wavelength from the first semiconductor light emitting layer is different from the emission wavelength from the second semiconductor light emitting layer,
A semiconductor light emitting element characterized by the above .

28. The semiconductor light emitting device according to claim 27, wherein the first semiconductor light emitting layer has a wurtzite crystal structure, and the second semiconductor light emitting layer has a zinc blende crystal structure.

28. The semiconductor light emitting element according to claim 27, wherein the second semiconductor light emitting layer comprises a semiconductor layer selected from an AlGaInP based semiconductor layer, an AlGaInAs based semiconductor layer, a GaInNAs based semiconductor layer, and a GaInAsP based semiconductor layer.

28. The semiconductor light emitting element according to claim 27, wherein the first semiconductor light emitting layer and the second semiconductor light emitting layer have different emission wavelengths.

28. The semiconductor light emitting element according to claim 27, wherein the second semiconductor light emitting layer is formed on a growth substrate, and the growth substrate is peeled off by ablation or etching.

28. The semiconductor light emitting element according to claim 27, wherein the second semiconductor light emitting layer is attached to the first semiconductor light emitting layer through an adhesive layer.

Forming a first semiconductor light emitting layer that emits predetermined light;
A second semiconductor light-emitting layer that is formed of a semiconductor layer made of a different crystal system from the first semiconductor light-emitting layer and is excited by light from the first semiconductor light-emitting layer to emit light;
Bonding the second semiconductor light emitting layer side to the first semiconductor light emitting layer side,
A method of manufacturing a semiconductor light emitting element, wherein an emission wavelength from the first semiconductor light emitting layer and an emission wavelength from the second semiconductor light emitting layer are different.

The said 2nd semiconductor light emitting layer is laminated | stacked and formed on a board | substrate, and when bonding together to the said semiconductor structure part, the said 2nd semiconductor light emitting layer is peeled from the said board | substrate, 36. A method for manufacturing a semiconductor light emitting device.

36. The method of manufacturing a semiconductor light emitting element according to claim 35, wherein the second semiconductor light emitting layer is peeled from the substrate by laser ablation.

36. The method of manufacturing a semiconductor light emitting element according to claim 35, wherein the second semiconductor light emitting layer is peeled off from the substrate by removing the substrate by etching.

Forming a plurality of semiconductor structure portions having a first semiconductor light emitting layer for emitting predetermined light;
A part of the plurality of semiconductor structure portions includes a semiconductor layer made of a crystal system different from that of the first semiconductor light emitting layer that is excited by light from the first semiconductor light emitting layer and emits light. The second semiconductor light emitting layer side to be bonded to the first semiconductor light emitting layer side,
A semiconductor light emitting device, wherein an emission wavelength from the first semiconductor light emitting layer is different from an emission wavelength from the second semiconductor light emitting layer.