JP2012047723A - Radiation detection panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve a configuration having a function for detecting radiation separately from a function for detecting the radiation as an image, without increasing the size and thickness of a panel and reducing image detection sensitivity.SOLUTION: A radiation detection panel includes a scintillator 71 absorbing the radiation and emitting light and a radiation detector 60 configured in such a manner that a photoelectric conversion part 72 converting the light emitted from the scintillator 71 into an electric charge and a pixel part 74 having a storage capacitance 68 for storing the electric charge and a TFT 70 turned on when the electric charge is read are arranged like a matrix on an insulation substrate 64. In the radiation detection panel, the insulation substrate 64 has light transmissivity and a radiation detection part 62 is provided on the side opposite to the scintillator 71 across the radiation detector 60 (upstream side in the arrival direction of the radiation), the radiation detection part 62 made of an organic photoelectric conversion material, converting the light emitted from the scintillator 71 into an electric signal and outputting it. A partial reflection layer 170 is provided between the radiation detector 60 and the radiation detection part 62.

Description

  The present invention relates to a radiation detection panel, and more particularly to a radiation detection panel including a light emitting unit that emits light by absorbing radiation transmitted through a subject and a detection unit that detects light emitted from the light emitting unit as an image.

In recent years, radiation sensitive layers have been arranged on TFT (Thin Film Transistor) active matrix substrates to detect irradiated X-rays, γ-rays, α-rays, and other radiation, and to radiation image data representing the distribution of irradiation dose. An FPD (Flat Panel Detector) that directly converts and outputs has been put into practical use. It incorporates a panel-type radiation detector such as this FPD, an electronic circuit including an image memory, and a power supply unit, and is output from the radiation detector. A portable radiation detection panel (hereinafter also referred to as an electronic cassette) that stores radiation image data in an image memory has been put into practical use. As the radiation sensitive layer, for example, irradiated radiation is once converted into light by a scintillator (phosphor layer) such as CsI: Tl, GOS (Gd ₂ O ₂ S: Tb), and emitted from the scintillator. There is known a configuration (indirect conversion method) in which light is reconverted into an electric charge and stored by a photodetection unit including a PD (Photodiode) or the like. Because the radiation detection panel is excellent in portability, the subject can be photographed while being placed on a stretcher or bed, and the position of the radiation detection panel can be easily adjusted to adjust the imaging part, so it cannot move. It is possible to flexibly cope with shooting of the subject.

  By the way, in order to maintain the image quality of the captured image in the radiation detection panel of the indirect conversion method, the imaging start timing (timing at which radiation irradiation to the radiation detection panel is started) is detected, and a photoelectric sensor such as a PD is detected. After resetting unnecessary charges accumulated over time due to dark current of the conversion element (for example, current generated by re-emission of charges once trapped in the impurity level of amorphous silicon), It is necessary to start shooting (charge accumulation). The detection of the imaging start timing (or imaging end timing) by the radiation detection panel is performed by connecting the radiation source and the radiation detection panel to a signal line so that the radiation detection panel notifies the imaging start timing (or imaging end timing). In general, the radiation detection panel is connected to the radiation source with a signal line. However, the handling of the radiation detection panel deteriorates, so the radiation detection panel itself can be irradiated with radiation. It is desirable to mount the function of detecting in the radiation detection panel.

  In relation to the above, Patent Document 1 discloses a solid state including a conversion unit that converts radiation emitted from a radiation source into an electrical signal, a storage unit that stores the converted electrical signal, and a reading unit that reads the stored electrical signal. The radiation imaging device provided with the imaging device controls a radiation detection element that detects the start and end of radiation emission from the radiation source and a drive circuit that drives the storage unit or the reading unit according to the detection result of the radiation detection element. And a control unit that realizes omission of wiring between the radiation source and the radiation imaging apparatus.

  Further, in Patent Document 2, a dosimeter (photosensitive detection element) made of a sensor matrix is provided on the opposite side of the sensor matrix for detecting light emitted from the scintillator as an image with the scintillator interposed therebetween. An X-ray apparatus having a configuration in which a semi-transmissive reflector is provided on the light incident side is disclosed.

  Further, Patent Document 3 includes a phosphor film that emits light by absorbing radiation transmitted through a subject, an upper electrode, a lower electrode, and a photoelectric conversion unit and a field effect thin film transistor that are disposed between upper and lower electrodes. In a radiation imaging device having a configuration in which a photoelectric conversion film and a signal output unit that outputs a signal corresponding to the charge generated by the photoelectric conversion unit are sequentially stacked on the substrate, the photoelectric conversion unit emits light emitted from the phosphor film. It is disclosed that it is composed of an organic photoelectric conversion material that absorbs.

JP 2002-181942 A JP-T-2004-504611 JP 2009-32854 A

  As described above, when the radiation detection panel is equipped with a function to detect when radiation irradiation starts (or when irradiation ends), radiation applied to the radiation detection panel In addition to the configuration for detecting an image as an image, for example, a radiation detection element that detects radiation applied to a radiation detection panel, such as a radiation detection element described in Patent Document 1 or a photosensitive detection element described in Patent Document 2. New means need to be provided. The radiation detection panel also has a function to detect the amount of radiation irradiated to the radiation detection panel (and its integrated value) for the purpose of limiting the cumulative amount of radiation applied to the subject. Even when there is a need and it is going to satisfy such a need, it is necessary to newly provide the radiation detection means in the radiation detection panel.

  However, in the technique described in Patent Document 1, since the radiation detection element is provided on the side of the phosphor and the detection body (one end along the radiation irradiation surface), the size of the radiation detection panel along the radiation irradiation surface. However, there is a problem that handling of the radiation detection panel is deteriorated. In addition, the technique described in Patent Document 1 is likely to cause the radiation incident on the radiation detection element to be blocked by an obstacle due to the arrangement of the radiation detection element, so that the radiation cannot be detected. It is also difficult to detect.

  In the technique described in Patent Document 2, since the scintillator, the sensor matrix, the photosensitive detection element, the semi-transmissive reflector, and the like are stacked along the direction in which the radiation arrives, the thickness of the radiation detection panel is greatly increased. This causes a problem that the handleability of the radiation detection panel deteriorates. In addition, when a radiation detection means is newly provided in the radiation detection panel, there is a possibility that the detection sensitivity when detecting radiation applied to the radiation detection panel as an image is lowered depending on the configuration (arrangement). There is also sex.

  The present invention has been made in consideration of the above-mentioned facts. In addition to the function of detecting irradiated radiation as an image, a configuration provided with a function of detecting irradiated radiation has an increased panel size and thickness. It is an object to obtain a radiation detection panel realized without causing a significant increase and a decrease in image detection sensitivity.

  In order to achieve the above object, a radiation detection panel according to a first aspect of the present invention includes a light emitting unit that emits light by absorbing radiation transmitted through a subject, and a first light that detects light emitted from the light emitting unit as an image. A detecting means and a flexible support, and disposed on the opposite side of the first detecting means with respect to the light emitting part or on the opposite side of the light emitting part with respect to the first detecting means; A second detecting means for detecting light emitted from the light emitting portion by an organic photoelectric conversion material; and between the light emitting portion and the second detecting means and between the light emitting portion and the second detecting means. When there is one detection means, the partial reflection means is arranged between the first detection means and the second detection means, and reflects a part of the light incident from the light emitting part side to the light emitting part side. And are stacked along the direction of radiation arrival It has been.

  According to the first aspect of the present invention, in addition to the light emitting portion that emits light by absorbing the radiation that has passed through the subject, and the first detection means that detects the light emitted from the light emitting portion as an image, the flexible support The second detection means that is formed on the body and detects the light emitted from the light emitting part by the organic photoelectric conversion material is disposed on the opposite side of the first detecting means with respect to the light emitting part or between the first detecting means and the light emitting part. Arranged on the opposite side, the first detection means realizes a function of detecting the irradiated radiation as an image, and the second detection means realizes a function of detecting the irradiated radiation.

  In the radiation detection panel according to the first aspect of the present invention, the light emitting unit, the first detection unit, the second detection unit, and the partial reflection unit are configured to be stacked along the arrival direction of the radiation. By providing the detection means, it is possible to prevent an increase in the panel size along the direction approximately orthogonal to the radiation arrival direction.

  In addition, since the second detection means for detecting the light emitted from the light emitting portion by the organic photoelectric conversion material can be manufactured by attaching the organic photoelectric conversion material to the support using a droplet discharge head such as an inkjet head, Compared to the case where the second detection means is configured using a material that needs vapor deposition or the like in production (for example, silicon), it can be formed on a support having a low strength and a heat-resistant temperature. Therefore, in the first aspect of the invention, the second detection means is formed on the flexible support (the flexible support is generally thin and has high impact resistance). . Further, the partial reflection means for reflecting a part of the light incident from the light emitting unit side to the light emitting unit side may have a uniform structure in which the light reflectance (light reflectance) is uniform over the entire surface of the light receiving surface. Although the ratio (light reflectivity) may be partially different in the light receiving surface, the thickness can be reduced as in any configuration, for example, in the form of a thin film. Thereby, although the light emission part, the 1st detection means, the 2nd detection means, and the partial reflection means are the structures laminated | stacked along the arrival direction of a radiation, the increase in thickness can be suppressed.

  According to the first aspect of the present invention, the second detecting means is disposed on the opposite side of the first detecting means with the light emitting portion interposed therebetween or on the opposite side of the light emitting portion with the first detecting means interposed therebetween. If the first detection means exists between the light emitting unit and the second detection means and between the light emission unit and the second detection means, the first detection means and the second detection means are arranged, Since a part of the light incident from the light emitting part side is reflected to the light emitting part side, the first detecting means is located on the light reflecting side of the partial reflecting means in any structure. Thereby, compared with the case where the partial reflection means is not provided, the amount of light received by the first detection means is increased, and the sensitivity of image detection by the first detection means is improved.

  Note that a part of the light emitted from the light emitting unit that has been transmitted through the partial reflection unit is incident on the second detection unit. Therefore, the detection by the second detection unit is provided by providing the partial reflection unit. Is not disturbed. Therefore, according to the first aspect of the present invention, the configuration provided with the function of detecting the irradiated radiation in addition to the function of detecting the irradiated radiation as an image is increased in panel size and greatly increased in thickness. This can be realized without causing a decrease in image detection sensitivity. In addition, by forming the second detection means on a flexible support, the radiation detection panel can be further reduced in thickness and impact resistance can be improved, and the handleability of the radiation detection panel can be improved. Can be made.

  In the invention described in claim 1, for example, as described in claim 2, it is preferable that the flexible support body on which the second detection means is formed is a substrate made of synthetic resin. The substrate made of synthetic resin is easy to reduce the thickness of the substrate although the heat resistant temperature is lower than that of a glass substrate, etc. Since it can be made lightweight, the handleability of the radiation detection panel can be further improved.

  Further, in the invention described in claim 2, the first detection means is configured to detect the light emitted from the light emitting portion as an image by the organic photoelectric conversion material, as described in claim 3, for example. It is preferably formed on the same support as the means. As described above, the first detection means is configured to detect the light emitted from the light emitting portion as an image by the organic photoelectric conversion material, so that it is not necessary to perform vapor deposition when manufacturing the first detection means, and the synthetic resin It can also be formed on a manufactured substrate. Then, as described above, the first detection means is formed on the same support body as the second detection means, so that the support bodies are provided corresponding to the first detection means and the second detection means, respectively. By reducing the number of supports, the thickness of the radiation panel can be further reduced, and the handleability of the radiation detection panel can be further improved.

  In the invention described in claim 2, if the light emitting part is made of a material that does not require vapor deposition in manufacturing, such as GOS (Gd2O2S: Tb), the synthetic resin as the support according to claim 2 is manufactured. This substrate is preferable because it can be used as a support for supporting the light emitting portion.

  In the first aspect of the present invention, the flexible support body on which the second detection means is formed has heat resistance that can be used for vapor deposition as described in the fourth aspect, for example. (Specifically, a flexible glass substrate having a thickness of about 50 μm may be used.) In this case, the first detection means is formed on the same support as the second detection means. Preferably it is. Also in this case, the thickness of the radiation panel can be further reduced by reducing the number of supports as compared with the case where supports are provided corresponding to the first detection means and the second detection means, respectively, and radiation detection is possible. The handleability of the panel can be further improved.

  Moreover, in the invention according to any one of claims 1 to 4, the first detection means is arranged upstream of the light emission direction with respect to the light emitting unit, for example, as described in claim 5. It is preferable. As described above, the first detection unit is disposed upstream of the light emitting unit in the direction of arrival of the radiation, so that the first detection unit is disposed more upstream than the light emitting unit in the direction of arrival of the radiation. The amount of light received by the first detection unit is increased, and the sensitivity of the first detection unit that detects the light emitted from the light emitting unit as an image can be improved.

  Further, in the invention according to any one of claims 1 to 5, the second detection means is disposed only on the opposite side of the light emitting portion with the first detection means interposed therebetween, and the first detection means is light transmissive. For example, as described in claim 6, it is disposed on the opposite side of the first detecting means with the light emitting portion interposed therebetween, and the light incident from the light emitting portion side is totally reflected to the light emitting portion side. It is preferable that a total reflection means is provided. Thereby, in addition to the light emitted from the light emitting part to the first detecting means side, the light emitted from the light emitting part to the side opposite to the first detecting means is totally reflected by the total reflecting means. Then, the light is transmitted through the light emitting unit, and the sensitivity of image detection by the first detection unit can be further improved. In the invention described in claim 6, since the second detection means is disposed only on the opposite side of the light emitting unit across the first detection means, even if the total reflection means is disposed at the above position, the light emitting unit Part of the light emitted from the light enters the second detection means, and detection by the second detection means is not hindered.

  Further, in the invention according to any one of claims 1 to 5, the second detection means is disposed only on the opposite side of the first detection means across the light emitting portion, and the first detection means is light transmissive. For example, as described in claim 7, the light is disposed on the opposite side of the light emitting unit with the first detection unit interposed therebetween, and light incident from the light emitting unit side is emitted from the light emitting unit side. It is preferable that a total reflection means for total reflection is provided. In this case, out of the light incident from the light emitting unit, the light that has been once transmitted through the first detection unit and totally reflected by the total reflection unit is incident again on the first detection unit. The sensitivity of image detection by the means can be further improved. In the invention according to claim 7, since the second detection means is arranged only on the opposite side of the first detection means with the light emitting part interposed therebetween, even if the total reflection means is arranged at the above position, the light emitting part Part of the light emitted from the light enters the second detection means, and detection by the second detection means is not hindered.

  Further, in the invention according to any one of claims 1 to 7, for example, as described in claim 8, it is disposed on the opposite side of the light emitting unit with the second detection means interposed therebetween, and is incident from the light emitting unit side. It is preferable that a total reflection means for totally reflecting the reflected light toward the light emitting portion is provided. In this case, out of the light incident from the light emitting unit side, the light that has been once transmitted through the second detection unit and totally reflected by the total reflection unit is again incident on the second detection unit. The sensitivity of detection by the detection means can also be improved.

  Moreover, in invention of Claim 1-8, as described in Claim 9, for example, only one light emission part is provided, The member which exists between a single light emission part and 1st detection means, And the members existing between the single light emitting unit and the second detection means each have a light transmission property that transmits at least part of the irradiated light, and the first detection means and the second detection means are: It is preferable that the light emitted from a single light emitting unit is detected. Thereby, the light emitted from the light emitting unit is detected by the first detecting unit and the second detecting unit, respectively, and the light emitting unit is made common to the first detecting unit and the second detecting unit. It is not necessary to provide a plurality of light emitting portions in order to provide the means, and the thickness can be further suppressed.

  Further, in the invention according to any one of claims 1 to 9, for example, as described in claim 10, the first detection means is formed on a plate-like support having light transmittance, and is plate-like. The light-emitting portion is laminated on one surface of the support and the second detection device is laminated on the other surface, and the partial reflection device is arranged between the first detection device and the second detection device so that the radiation is emitted. It is preferable that they are arranged so as to arrive from the second detection means side. In the above configuration, the first detection unit, the second detection unit, and the light emitting unit are supported by a single plate-like support, so that at least one of the first detection unit, the second detection unit, and the light emission unit is different from the other. The panel can be made thinner than when supported by a different support.

  Further, since the first detection means and the second detection means are arranged on the radiation incident side of the light emitting unit, the light detection efficiency by the first detection means and the second detection means can be improved. Since the partial reflection means is disposed between the first detection means and the second detection means, the amount of light received by the first detection means is greater than when the partial reflection means is not provided. It is possible to prevent the image detection sensitivity from being lowered due to the provision.

  In the invention according to any one of claims 1 to 10, for example, as described in claim 11, the light detection timing by the first detection means based on the light detection result by the second detection means. It is preferable to further provide a first control means for performing a first control to synchronize with the irradiation timing of radiation to the radiation detection panel. As a result, the radiation detection control that synchronizes the light detection timing by the first detection means with the radiation irradiation timing to the radiation detection panel without requiring external notification of the radiation irradiation timing to the radiation detection panel. It can be realized by a panel alone.

  Further, in the invention according to claim 11, the first detection means converts the light emitted from the light emitting portion into an electric signal, and the charge accumulation for accumulating the electric signal output from the photoelectric conversion portion as a charge. The first control means detects at least the light emitted from the light emitting part by the second detection means as described in claim 12, for example, as the first control. In such a case, control is performed to start detection of light emitted from the light emitting unit by the first detection means from a state in which the electrical signal previously output from the photoelectric conversion unit is not stored as charge in the charge storage unit. Can be configured to do.

  In the twelfth aspect of the invention, the first control means may perform the first control when, for example, the light emitted from the light emitting unit is no longer detected by the second detection means, as described in the thirteenth aspect. Further, it may be configured to perform control for starting reading of the charges accumulated in the charge accumulation unit of the first detection means.

  Further, in the invention according to any one of claims 1 to 11, for example, as described in claim 14, based on a detection result of light by the second detection means, integrated radiation irradiation to the radiation detection panel It is preferable to further provide a second control means for performing a second control for terminating the emission of radiation from the radiation source when the amount reaches a predetermined value. Thereby, without providing a means for detecting the integrated radiation dose to the radiation detection panel, the control for terminating the emission of radiation from the radiation source when the cumulative radiation dose to the radiation detection panel reaches a predetermined value. Can be realized.

  Further, in the invention described in claim 14, as the second control, for example, as described in claim 15, the second control means performs radiation to the radiation detection panel based on the light detection result by the second detection means. When it is determined that the calculation result of the integrated dose has reached a predetermined value, it is repeatedly determined that the calculation result of the integrated dose has reached a predetermined value. It can be configured to perform control to output a signal notifying that the integrated dose has reached the predetermined value.

  Further, in the invention according to claim 15, in the configuration in which a display unit is provided in the radiation detection panel according to the present invention, for example, the output of the signal for notifying that the integrated dose of radiation has reached a predetermined value, Output of a signal for switching the display on the display unit to a display for notifying that the cumulative dose of radiation has reached a predetermined value is included, but the second control means, for example, as described in claim 16, An instruction signal for instructing the end of the emission of radiation from the radiation source is output to the control device that controls the emission of radiation from the radiation source as a signal for notifying that the integrated dose of radiation has reached a predetermined value. You may comprise.

  As described above, the present invention comprises a light emitting unit that emits light by absorbing radiation that has passed through a subject, first detection means that detects light emitted from the light emitting unit as an image, and an organic photoelectric conversion material. A second detection means for detecting the light emitted from the light emitting part, the light emitting part and the second detection, disposed on the opposite side of the first detection means with respect to the first part or on the opposite side of the light emitting part with the first detection part in between When the first detection means is present between the means and between the light emitting section and the second detection means, the first detection means is disposed between the first detection means and the second detection means and is incident from the light emitting section side. Since the partial reflection means for reflecting a part of the light toward the light emitting unit is laminated along the direction of arrival of the radiation, the function of detecting the irradiated radiation is separated from the function of detecting the irradiated radiation as an image. Increase the panel size and increase the thickness significantly Can be realized without lowering the image detection sensitivity, it has an excellent effect that.

It is a block diagram which shows the structure of the radiation information system demonstrated by embodiment. It is a side view which shows an example of the arrangement | positioning state of each apparatus in the radiography room of a radiographic imaging system. It is a perspective view which shows a partially broken electronic cassette. It is sectional drawing which showed the structure of the radiation detector typically. It is sectional drawing which shows the structure of the thin-film transistor and capacitor | condenser of a radiation detector. It is a top view which shows the structure of a TFT substrate. It is a block diagram which shows the principal part structure of the electric system of an electronic cassette. It is a block diagram which shows the principal part structure of the electrical system of a console and a radiation generator. It is a flowchart which shows the content of imaging | photography control processing. It is the schematic which shows the variation of schematic structure of an electronic cassette, respectively. It is the schematic which shows the variation of schematic structure of an electronic cassette, respectively. It is the schematic which shows the variation of schematic structure of an electronic cassette, respectively. It is the schematic which shows the variation of schematic structure of an electronic cassette, respectively. It is the schematic which shows the variation of schematic structure of an electronic cassette, respectively. It is the schematic which shows the variation of schematic structure of an electronic cassette, respectively. It is the schematic which shows the variation of schematic structure of an electronic cassette, respectively. It is the schematic which shows the variation of schematic structure of an electronic cassette, respectively.

  Hereinafter, an example of an embodiment of the present invention will be described in detail with reference to the drawings. 1 shows a radiation information system 10 (hereinafter referred to as “RIS10” (RIS: (Radiology Information System)) according to the present embodiment, which is a medical appointment, a diagnostic record, etc. in a radiology department in a hospital. A plurality of terminal devices 12, a RIS server 14, and a radiographic imaging system 18 (console 42) installed in each radiographic room (or operating room) in a hospital. The RIS 10 is connected to an in-hospital network 16 comprising a wired or wireless LAN (Local Area Network), and the RIS 10 is a hospital information system (HIS) provided in the same hospital. A HIS server (not shown) for managing the entire HIS is also connected to the hospital network 16.

  Each terminal device 12 is constituted by a personal computer (PC) or the like, and is operated by a doctor or a radiographer. A doctor or a radiographer inputs / views diagnostic information and facility reservation via the terminal device 12, and a radiographic imaging request (imaging reservation) is also input via the terminal device 12. The RIS server 14 is a computer configured to include a storage unit 14A for storing a RIS database (DB). The RIS database includes patient attribute information (for example, patient name, sex, date of birth, age, Blood type, patient ID, etc.), medical history, consultation history, radiographic imaging history, other information about the patient such as data of radiographic images taken in the past, electronic cassette 32 (described later) of each radiographic imaging system 18 Information related to the information (for example, identification number, model, size, sensitivity, usable imaging part (content of imaging request that can be supported), use start date, number of times of use, etc.) is registered. The RIS server 14 performs processing for managing the entire RIS 10 based on information registered in the RIS database (for example, accepts imaging requests from the terminal devices 12 and manages radiographic imaging schedules in the individual radiographic imaging systems 18). Process).

  Each radiographic imaging system 18 is a system that performs radiographic imaging instructed by the RIS server 14 according to the operation of a doctor or radiographer, and generates a radiation generator 34 that generates radiation to be irradiated to a patient (subject). An electronic cassette 32 having a built-in radiation detector that detects radiation that has passed through the patient and converts / outputs it into radiographic image data, a cradle 40 that charges a battery 96A (see FIG. 3) built in the electronic cassette 32, and each of the above Each console 42 is provided for controlling the operation of the device. The electronic cassette 32 is an example of a radiation detection panel according to the present invention.

  As shown in FIG. 2, a radiation imaging room 44 in which a radiation source 130 (details will be described later) of the radiation generator 34 is disposed, and a standing table 45 used when performing radiation imaging in a standing position, A stand 46 used when performing radiography at the position, and the front space of the stand 45 is set as the shooting position 48 of the subject when performing radiography at the standing position, The space above the prone position 46 is set as a photographing position 50 of the person to be imaged when performing radiography in the prone position. The stand 45 is provided with a holding unit 150 that holds the electronic cassette 32, and the electronic cassette 32 is held by the holding unit 150 when a radiographic image is taken in the standing position. Further, when taking a radiographic image in the supine position, the electronic cassette 32 is placed on the top plate 152 of the supine stand 46.

  Further, in the radiation imaging room 44, the radiation source 130 is arranged around a horizontal axis (see FIG. 5) in order to enable radiation imaging in a standing position and in a standing position by radiation from a single radiation source 130. 2 is provided that can be rotated in the direction of arrow A in FIG. 2, movable in the vertical direction (in the direction of arrow B in FIG. 2), and movably supported in the horizontal direction (in the direction of arrow C in FIG. 2). It has been. The support moving mechanism 52 includes a drive source that rotates the radiation source 130 around a horizontal axis, a drive source that moves the radiation source 130 in the vertical direction, and a drive source that moves the radiation source 130 in the horizontal direction. If the posture at the time of imaging specified by the imaging condition information is standing, the radiation source 130 is set to the position 54 for standing imaging (the patient whose emitted radiation is located at the imaging position 48). If the posture at the time of imaging specified by the imaging condition information is in the supine position, the radiation source 130 is moved to the position 56 for supine imaging (the emitted radiation is at the imaging position 50). The patient is moved to the position irradiated from above.

  In addition, the cradle 40 is formed with an accommodating portion 40 </ b> A that can accommodate the electronic cassette 32. The electronic cassette 32 is accommodated in the accommodating portion 40A of the cradle 40 when not in use, and the built-in battery is charged by the cradle 40 in this state. Further, when the radiographic image is taken, it is taken out from the cradle 40 by a radiographer or the like, and is held by the holding unit 150 of the stand 45 if the radiographing posture is in the upright position. It is placed on the top plate 152. It should be noted that the electronic cassette 32 is not limited to being disposed at any of the above two types of positions at the time of imaging, and the electronic cassette 32 has portability, so that it can be arbitrarily placed in the radiation imaging room 44 at the time of imaging. It goes without saying that it can be arranged freely at the position of

  Next, the electronic cassette 32 will be described. As shown in FIG. 3, the electronic cassette 32 includes a rectangular parallelepiped housing 54 made of a material that transmits the radiation X and having a rectangular irradiation surface 56 on which the radiation X is irradiated. When the electronic cassette 32 is used in an operating room or the like, blood or other bacteria may adhere to it. For this reason, the electronic cassette 32 is hermetically sealed by the housing 54 and has a waterproof structure, and the same electronic cassette 32 can be used repeatedly by sterilizing and washing as necessary.

  In the housing 54 of the electronic cassette 32, the radiation as the second detection means of the present invention is sequentially arranged from the radiation X irradiation surface 56 side of the housing 54 along the arrival direction of the radiation X that has passed through the subject. The detector 62, the radiation detector 60 as the first detecting means of the present invention, and the scintillator 71 as the light emitting section of the present invention are laminated. In addition, a case 31 that houses various electronic circuits including a microcomputer and a rechargeable and detachable battery 96 </ b> A is disposed inside the housing 54 at one end along the longitudinal direction of the irradiation surface 56. Yes. The radiation detector 60 and the various electronic circuits described above are operated by electric power supplied from a battery 96 </ b> A housed in the case 31. In order to avoid damaging the various electronic circuits housed in the case 31 with the radiation X, a radiation shielding member made of a lead plate or the like is provided on the irradiation surface 56 side of the case 31 in the housing 54. It is arranged.

  Further, the irradiation surface 56 of the housing 54 is composed of a plurality of LEDs, and the operation such as the operation mode of the electronic cassette 32 (for example, “ready state” or “data transmitting”), the remaining capacity state of the battery 96A, and the like. A display unit 56A for displaying the state is provided. The display unit 56A may be composed of a light emitting element other than an LED, or may be composed of display means such as a liquid crystal display or an organic EL display. The display unit 56 </ b> A may be provided at a site other than the irradiation surface 56.

  As shown in FIG. 4, the radiation detector 60 includes a photoelectric conversion unit 72 made up of a photodiode (PD: PhotoDiode), a thin film transistor (TFT) 70, and a pixel unit 74 including a storage capacitor 68. 6, a plurality of TFT active matrix substrates (hereinafter referred to as “TFT substrates”) formed in a matrix on an insulating substrate 64 that is flat and has a rectangular outer shape in plan view. Yes.

  The photoelectric conversion unit 72 is configured such that a photoelectric conversion film 72C that absorbs light emitted from the scintillator 71 and generates charges according to the absorbed light is disposed between the upper electrode 72A and the lower electrode 72B. Yes.

The upper electrode 72A is preferably made of a conductive material having a high light transmittance with respect to light having the emission wavelength of the scintillator 71 because the light emitted from the scintillator 71 needs to enter the photoelectric conversion film 72C. Specifically, it is preferable to use a transparent conductive oxide (TCO) having a high transmittance for visible light and a small resistance value. Although a metal thin film such as Au can be used as the upper electrode 72A, a resistance value tends to increase when an optical transmittance of 90% or more is obtained, so that the TCO is preferable. For example, ITO, IZO, AZO, FTO, SnO ₂ , TiO ₂ , ZnO ₂ or the like is preferably used, and ITO is most preferable from the viewpoint of process simplicity, low resistance, and transparency. The upper electrode 72A may have a single configuration common to all the pixel portions, or may be divided for each pixel portion.

  The material constituting the photoelectric conversion film 72 </ b> C may be any material that absorbs light and generates charges, and for example, amorphous silicon, an organic photoelectric conversion material, or the like can be used. When the photoelectric conversion film 72 </ b> C is made of amorphous silicon, the light emitted from the scintillator 71 can be configured to absorb over a wide wavelength range. However, it is necessary to perform vapor deposition for forming the photoelectric conversion film 72C made of amorphous silicon. If the insulating substrate 64 is made of a synthetic resin, the heat resistance of the insulating substrate 64 may be insufficient.

  On the other hand, when the photoelectric conversion film 72C is made of a material containing an organic photoelectric conversion material, an absorption spectrum that exhibits high absorption mainly in the visible light region is obtained, and other than the light emitted from the scintillator 71 by the photoelectric conversion film 72C. Therefore, noise generated when radiation such as X-rays and γ-rays is absorbed by the photoelectric conversion film 72C can be suppressed. In addition, the photoelectric conversion film 72C made of an organic photoelectric conversion material can be formed by attaching an organic photoelectric conversion material on a body to be formed using a droplet discharge head such as an inkjet head. Heat resistance is not required. For this reason, in this embodiment, the photoelectric conversion film 72C of the photoelectric conversion unit 72 is formed of an organic photoelectric conversion material.

  When the photoelectric conversion film 72C is made of an organic photoelectric conversion material, radiation is hardly absorbed by the photoelectric conversion film 72C. Therefore, in the surface reading method (ISS) in which the radiation detector 60 is disposed so that the radiation is transmitted, radiation detection is performed. Attenuation of radiation due to transmission through the vessel 60 can be suppressed, and a decrease in sensitivity to radiation can be suppressed. Therefore, it is particularly suitable for the surface reading method (ISS) to configure the photoelectric conversion film 72C with an organic photoelectric conversion material.

The organic photoelectric conversion material constituting the photoelectric conversion film 72 </ b> C preferably has an absorption peak wavelength that is closer to the emission peak wavelength of the scintillator 71 in order to absorb light emitted from the scintillator 71 most efficiently. Ideally, the absorption peak wavelength of the organic photoelectric conversion material coincides with the emission peak wavelength of the scintillator 71, but if the difference between the two is small, the light emitted from the scintillator 71 can be sufficiently absorbed. . Specifically, the difference between the absorption peak wavelength of the organic photoelectric conversion material and the emission peak wavelength with respect to the radiation of the scintillator 71 is preferably within 10 nm, and more preferably within 5 nm.

  Examples of organic photoelectric conversion materials that can satisfy such conditions include quinacridone-based organic compounds and phthalocyanine-based organic compounds. For example, since the absorption peak wavelength in the visible region of quinacridone is 560 nm, the above peak is obtained when quinacridone is used as the organic photoelectric conversion material and CsI: Tl (cesium iodide added with thallium) is used as the material of the scintillator 71. The wavelength difference can be made within 5 nm, and the amount of charge generated in the photoelectric conversion film 72C can be substantially maximized. Since the organic photoelectric conversion material applicable to the photoelectric conversion film 72C is described in detail in Japanese Patent Application Laid-Open No. 2009-32854, description thereof is omitted.

  The photoelectric conversion film 72C applicable to the radiation detector 60 will be specifically described. The electromagnetic wave absorption / photoelectric conversion site in the radiation detector 60 is an organic layer including electrodes 72A and 72B and a photoelectric conversion film 72C sandwiched between the electrodes 72A and 72B. More specifically, this organic layer is a part that absorbs electromagnetic waves, a photoelectric conversion part, an electron transport part, a hole transport part, an electron blocking part, a hole blocking part, a crystallization preventing part, an electrode, and an interlayer contact. It can be formed by stacking or mixing improved parts.

  The organic layer preferably contains an organic p-type compound or an organic n-type compound. An organic p-type semiconductor (compound) is a donor organic semiconductor (compound) mainly represented by a hole transporting organic compound, and is an organic compound having a property of easily donating electrons. More specifically, an organic compound having a smaller ionization potential when two organic materials are used in contact with each other. Accordingly, any organic compound having an electron donating property can be used as the donor organic compound. The organic n-type semiconductor (compound) is an acceptor organic semiconductor (compound) mainly represented by an electron transporting organic compound, and is an organic compound having a property of easily accepting electrons. More specifically, the organic compound having the higher electron affinity when two organic compounds are used in contact with each other. Therefore, any organic compound can be used as the acceptor organic compound as long as it is an organic compound having an electron accepting property.

  Since the materials applicable as the organic p-type semiconductor and the organic n-type semiconductor and the configuration of the photoelectric conversion film 72C are described in detail in Japanese Patent Application Laid-Open No. 2009-32854, description thereof is omitted. Note that the photoelectric conversion film 72 </ b> C may further contain fullerenes or carbon nanotubes.

  In addition, the photoelectric conversion unit 72 only needs to include at least the electrode pairs 72A and 72B and the photoelectric conversion film 72C, but in order to suppress an increase in dark current, at least one of an electron blocking film and a hole blocking film is provided. It is preferable to provide both.

  The electron blocking film can be provided between the lower electrode 72B and the photoelectric conversion film 72C. When a bias voltage is applied between the lower electrode 72B and the upper electrode 72A, the electron blocking film is applied from the lower electrode 72B to the photoelectric conversion film 72C. An increase in dark current due to injection of electrons can be suppressed. An electron donating organic material can be used for the electron blocking film. The material actually used for the electron blocking film may be selected according to the material of the adjacent electrode and the material of the adjacent photoelectric conversion film 72C, and the electron affinity is 1.3 eV or more from the work function (Wf) of the adjacent electrode material. A material having a large (Ea) and an Ip equivalent to or smaller than the ionization potential (Ip) of the material of the adjacent photoelectric conversion film 72C is preferable. Since the material applicable as the electron donating organic material is described in detail in Japanese Patent Application Laid-Open No. 2009-32854, description thereof is omitted.

  The thickness of the electron blocking film is preferably 10 nm or more and 200 nm or less, more preferably 30 nm or more and 150 nm or less, and particularly preferably, in order to reliably exhibit the dark current suppressing effect and prevent a decrease in photoelectric conversion efficiency of the photoelectric conversion unit 72. It is 50 nm or more and 100 nm or less.

  The hole blocking film can be provided between the photoelectric conversion film 72C and the upper electrode 72A, and when a bias voltage is applied between the lower electrode 72B and the upper electrode 72A, the upper electrode 72A to the photoelectric conversion film 72C. It is possible to suppress the increase of dark current due to injection of holes into the substrate. An electron-accepting organic material can be used for the hole blocking film. The material actually used for the hole blocking film may be selected in accordance with the material of the adjacent electrode and the material of the adjacent photoelectric conversion film 72C, and the ionization is 1.3 eV or more from the work function (Wf) of the adjacent electrode material. It is preferable that the potential (Ip) is large and that the Ea is equal to or larger than the electron affinity (Ea) of the material of the adjacent photoelectric conversion film 72C. Since the material applicable as the electron-accepting organic material is described in detail in Japanese Patent Application Laid-Open No. 2009-32854, description thereof is omitted.

  The thickness of the hole blocking film is preferably 10 nm or more and 200 nm or less, more preferably 30 nm or more and 150 nm or less, particularly preferably, in order to reliably exhibit the dark current suppressing effect and prevent a decrease in the photoelectric conversion efficiency of the photoelectric conversion unit 308. Is from 50 nm to 100 nm.

  In the case where the bias voltage is set so that holes move to the upper electrode 72A and electrons move to the lower electrode 72B among the charges generated in the photoelectric conversion film 72C, the electron blocking film and the hole blocking film are used. It is sufficient to reverse the position of. Moreover, it is not essential to provide both the electron blocking film and the hole blocking film, and if any of them is provided, a certain degree of dark current suppressing effect can be obtained.

  As shown in FIG. 5, on the insulating substrate 64, the storage capacitor 68 that stores the charges transferred to the lower electrode 72 </ b> B corresponding to the lower electrode 72 </ b> B of the photoelectric conversion unit 72, and the storage capacitor 68. A TFT 70 that outputs charges as an electrical signal is formed. The region where the storage capacitor 68 and the TFT 70 are formed partially overlaps the lower electrode 72B in plan view. Thereby, the storage capacitor 68 and the TFT 70 and the photoelectric conversion unit 72 in each pixel unit overlap in the thickness direction, and the storage capacitor 68, the TFT 70 and the photoelectric conversion unit 72 can be arranged in a small area. The storage capacitor 68 is electrically connected to the corresponding lower electrode 72B through a wiring made of a conductive material formed through an insulating film 65A provided between the insulating substrate 64 and the lower electrode 72B. Yes. As a result, the charge collected by the lower electrode 72B is moved to the storage capacitor 68.

  In the TFT 70, a gate electrode 70A, a gate insulating film 65B, and an active layer (channel layer) 70B are stacked, and a source electrode 70C and a drain electrode 70D are formed on the active layer 70B at a predetermined interval. The active layer 70B can be formed of, for example, any of amorphous silicon, amorphous oxide, organic semiconductor material, carbon nanotube, etc., but the material capable of forming the active layer 70B is limited to these. is not.

As the amorphous oxide capable of forming the active layer 70B, an oxide containing at least one of In, Ga, and Zn (for example, In—O-based) is preferable, and at least two of In, Ga, and Zn are used. Oxides containing one (for example, In—Zn—O, In—Ga, and Ga—Zn—O) are more preferable, and oxides including In, Ga, and Zn are particularly preferable. As the In—Ga—Zn—O-based amorphous oxide, an amorphous oxide whose composition in a crystalline state is represented by InGaO ₃ (ZnO) _m (m is a natural number less than 6) is preferable, and InGaZnO is particularly preferable. ₄ is more preferable. The amorphous oxide capable of forming the active layer 70B is not limited to these.

  Examples of the organic semiconductor material capable of forming the active layer 70B include, but are not limited to, phthalocyanine compounds, pentacene, vanadyl phthalocyanine, and the like. In addition, about the structure of a phthalocyanine compound, since it demonstrates in detail by Unexamined-Japanese-Patent No. 2009-212389, description is abbreviate | omitted.

  If the active layer 70B of the TFT 70 is formed of any one of an amorphous oxide, an organic semiconductor material, a carbon nanotube, etc., radiation such as X-rays is not absorbed, or even if it is absorbed, a very small amount remains. The superimposition of noise on the image signal can be effectively suppressed.

  Further, when the active layer 70B is formed of carbon nanotubes, the switching speed of the TFT 70 can be increased, and the degree of light absorption in the visible light region in the TFT 70 can be reduced. In addition, when the active layer 70B is formed of carbon nanotubes, the performance of the TFT 70 is remarkably deteriorated only by mixing a very small amount of metallic impurities into the active layer 70B. -It is necessary to extract and use for formation of the active layer 70B.

  Note that since the film formed of the organic photoelectric conversion material and the film formed of the organic semiconductor material have sufficient flexibility, the photoelectric conversion film 72C formed of the organic photoelectric conversion material and the active layer 70B are formed. In the configuration in which the TFT 70 formed of an organic semiconductor material is combined, it is not always necessary to increase the rigidity of the radiation detector 60 in which the weight of the patient (subject) body may be applied as a load. For this reason, in the radiation detector 60, the active layer of the TFT 70 is preferably formed of an organic semiconductor material.

  Further, the insulating substrate 64 may be any substrate as long as it has optical transparency and little radiation absorption. Here, both the amorphous oxide constituting the active layer 70B of the TFT 70 and the organic photoelectric conversion material constituting the photoelectric conversion film 72C of the photoelectric conversion portion 72 can be formed at a low temperature. Therefore, the insulating substrate 64 is not limited to a substrate having high heat resistance such as a semiconductor substrate, a quartz substrate, and a glass substrate, and a flexible substrate made of synthetic resin, aramid, or bionanofiber can also be used. Specifically, flexible materials such as polyesters such as polyethylene terephthalate, polybutylene phthalate, polyethylene naphthalate, polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, polycycloolefin, norbornene resin, poly (chlorotrifluoroethylene), etc. A conductive substrate can be used. By using such a flexible substrate made of synthetic resin, it is possible to reduce the weight, which is advantageous for carrying around, for example. The insulating substrate 64 includes an insulating layer for ensuring insulation, a gas barrier layer for preventing permeation of moisture and oxygen, an undercoat layer for improving flatness or adhesion to electrodes, and the like. May be provided.

  Since aramid can be applied at a high temperature process of 200 ° C. or more, the transparent electrode material can be cured at a high temperature to reduce the resistance, and can be applied to automatic mounting of a driver IC including a solder reflow process. Moreover, since aramid has a thermal expansion coefficient close to that of ITO (indium tin oxide) or a glass substrate, there is little warping after manufacturing and it is difficult to break. In addition, aramid can make a substrate thinner than a glass substrate or the like. Note that the insulating substrate 64 may be formed by stacking an ultrathin glass substrate and aramid.

  The bionanofiber is a composite of a cellulose microfibril bundle (bacterial cellulose) produced by bacteria (Acetobacter Xylinum) and a transparent resin. The cellulose microfibril bundle has a width of 50 nm and a size of 1/10 of the visible light wavelength, and has high strength, high elasticity, and low thermal expansion. By impregnating and curing a transparent resin such as an acrylic resin or an epoxy resin in bacterial cellulose, a bio-nanofiber having a light transmittance of about 90% at a wavelength of 500 nm can be obtained while containing 60-70% of the fiber. Bionanofiber has a low coefficient of thermal expansion (3-7ppm) comparable to silicon crystals, and is as strong as steel (460MPa), highly elastic (30GPa), and flexible, compared to glass substrates, etc. The insulating substrate 64 can be thinned.

  When a glass substrate is used as the insulating substrate 64, the thickness of the radiation detector (TFT substrate) 60 as a whole is about 0.7 mm, for example, but in this embodiment, considering the reduction in thickness of the electronic cassette 32, the insulating property is reduced. As the substrate 64, a substrate made of synthetic resin having light permeability and flexibility is used. Thereby, the thickness of the radiation detector (TFT substrate) 60 as a whole can be reduced to about 0.1 mm, for example, and the radiation detector (TFT substrate) 60 can be made flexible. Further, by providing the radiation detector (TFT substrate) 60 with flexibility, the impact resistance of the radiation detector 60 (TFT substrate) is improved, and even when an impact is applied to the casing 30 of the electronic cassette 32. The radiation detector (TFT substrate) 60 is not easily damaged. In addition, plastic resin, aramid, bio-nanofiber, etc. all absorb little radiation, and when the insulating substrate 64 is formed of these materials, the amount of radiation absorbed by the insulating substrate 64 is also reduced. Even if the radiation is transmitted through the light detection unit 306 by (ISS), a decrease in sensitivity to radiation can be suppressed.

  It is not essential to use a synthetic resin substrate as the insulating substrate 64 of the electronic cassette 32. Although the thickness of the electronic cassette 32 increases, it is made of another material such as a glass substrate and has flexibility. A substrate (for example, a flexible glass substrate having a thickness of about 50 μm) may be used as the insulating substrate 64.

  Further, as shown in FIG. 6, the radiation detector (TFT substrate) 60 includes a plurality of gate wirings 76 extending in a certain direction (row direction) for turning on / off individual TFTs 70, and the certain constants. The charge accumulated in the storage capacitor 68 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion unit 72) extending along the direction (column direction) intersecting with the direction is read through the on-state TFT 70. For this purpose, a plurality of data wirings 78 are provided. Further, as shown in FIG. 4, a planarizing layer 67 for flattening the TFT substrate is formed at the end of the radiation detector (TFT substrate) 60 opposite to the radiation arrival direction. .

As shown in FIG. 4, in this embodiment, a scintillator 71 that absorbs incident radiation and emits light is disposed on the opposite side of the radiation arrival direction across the radiation detector 60. 60 (the flattening layer 67) and the scintillator 71 are bonded by an adhesive layer 69. The light emission wavelength range of the scintillator 71 is preferably the visible light range (wavelength 360 nm to 830 nm), and in order to allow the radiation detector 60 to capture a monochrome radiographic image, it includes a green wavelength range. Is more preferable. In general, phosphors applied to the scintillator include, for example, CsI (Tl) (cesium iodide added with thallium), CsI (Na) (sodium-activated cesium iodide), GOS (Gd ₂ O ₂ S: Tb), and the like. However, the present invention is not limited to these materials.

  When imaging is performed using X-rays as radiation, those containing cesium iodide (CsI) are preferable, and it is particularly preferable to use CsI (Tl) having an emission spectrum of 420 nm to 700 nm at the time of X-ray irradiation. Note that the emission peak wavelength of CsI (Tl) in the visible light region is 565 nm. However, while it is necessary to perform vapor deposition when forming the scintillator 71 made of CsI, in the present embodiment, as described above, a substrate made of a synthetic resin having low heat resistance is used as the insulating substrate 64. Therefore, in this embodiment, as the scintillator 71, GOS that does not require vapor deposition or the like is used for forming the scintillator. The scintillator 71 has a thickness of about 0.3 mm, for example.

  A total reflection layer 172 that totally reflects light incident from the scintillator 71 side to the scintillator 71 side is provided on the opposite side of the scintillator 71 from the radiation detector 60. In the present embodiment, the total reflection layer 172 is composed of a thin film made of a material such as aluminum and formed by vapor deposition, rolling, or the like. However, other known configurations may be adopted as the total reflection layer 172. is there. The total reflection layer 172 is an example of the total reflection unit according to the sixth aspect.

  In the present embodiment, the radiation detection unit 62 is provided on the side opposite to the scintillator 71 (upstream side in the radiation arrival direction) with the radiation detector 60 interposed therebetween. The radiation detector 62 includes a wiring layer 142 in which a wiring 160 (see FIG. 7) to be described later is patterned on the surface of the insulating substrate 64 of the radiation detector 60 opposite to the side on which the pixel unit 74 is formed. An insulating layer 144 is sequentially formed, and a plurality of sensor portions 146 for detecting light emitted from the scintillator 71 and transmitted through the radiation detector 60 are formed on the upper layer (lower side in FIG. 4), and further on the upper layer of the sensor portion 146. Further, a protective layer 148 is formed. The thickness of the radiation detection unit 62 is, for example, about 0.05 mm.

  The sensor unit 146 includes an upper electrode 147A and a lower electrode 147B, and a photoelectric conversion film 147C that generates light by absorbing light from the scintillator 71 is disposed between the upper electrode 147A and the lower electrode 147B. ing. As the sensor unit 146 (photoelectric conversion film 147C), it is possible to apply a PIN type or MIS type photodiode using amorphous silicon, but in the present embodiment, the same as the photoelectric conversion film 72C of the photoelectric conversion unit 72. In addition, the photoelectric conversion film 147C is made of an organic photoelectric conversion material. Accordingly, it is possible to form the photoelectric conversion film 147C by attaching the organic photoelectric conversion material onto the object to be formed using a droplet discharge head such as an inkjet head, and the insulating substrate 64 has light transmittance. It is possible to use a thin substrate made of a synthetic resin.

  Further, between the radiation detector 60 and the radiation detector 62, a partial reflection that reflects a part of the light incident from the radiation detector 60 side to the radiation detector 60 side and transmits the rest to the radiation detector 62. A layer 170 is provided. In the present embodiment, the partial reflection layer 170 is composed of a thin film mixed with alumina particles. By adjusting the mixing ratio of the alumina particles, almost uniform and desired light reflectance over the entire surface of the partial reflection layer 170. (= 0 to a value higher than 0% and lower than 100%), and a partially reflective layer 170 through which a part of the irradiated light is transmitted is obtained. However, the partial reflection layer 170 is not limited to this configuration, and a desired light reflectance (light transmittance) can be obtained for the electrode of the radiation detection unit 62 (for example, the lower electrode 147B disposed on the radiation detector 60 side). By configuring as described above, it may be configured to function as the partial reflection layer 170, or another known configuration that functions as the partial reflection layer 170 may be employed. The partial reflection layer 170 is the partial reflection unit according to claim 1 (more specifically, “disposed between the light emitting part and the second detection unit and between the first detection unit and the second detection unit”). (Partial reflection means).

  The radiation detection unit 62 is for detecting the timing of irradiation of radiation to the electronic cassette 32 and detecting the integrated dose of radiation to the electronic cassette 32, and the detection (imaging) of the radiation image is performed. Since the detection is performed by the radiation detector 60, the sensor unit 146 of the radiation detection unit 62 has a larger arrangement pitch (lower arrangement density) than the pixel unit 74 of the radiation detector 60. The light receiving area has a size corresponding to several to several hundred pixel portions 74 of the radiation detector 60.

  As shown in FIG. 7, each gate wiring 76 of the radiation detector 60 is connected to a gate line driver 80, and each data wiring 78 is connected to a signal processing unit 82. When radiation that has passed through the subject (radiation carrying the image information of the subject) is irradiated onto the electronic cassette 32, the radiation corresponding to each position on the irradiation surface 56 in the scintillator 71 is irradiated with the radiation at each position. The amount of light corresponding to the amount is emitted, and the photoelectric conversion unit 72 of each pixel unit 74 generates a charge having a magnitude corresponding to the amount of light emitted from the corresponding portion of the scintillator 71. Charges are accumulated in the storage capacitors 68 of the individual pixel portions 74 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion portion 72).

  When charges are accumulated in the storage capacitors 68 of the individual pixel portions 74 as described above, the TFTs 70 of the individual pixel portions 74 are row-wise by signals supplied from the gate line drivers 80 via the gate wirings 76. The charges stored in the storage capacitor 68 of the pixel unit 74 that is turned on in order and the TFT 70 is turned on are transmitted as an analog electric signal through the data wiring 78 and input to the signal processing unit 82. Accordingly, the charges accumulated in the storage capacitors 68 of the individual pixel portions 74 are sequentially read out in units of rows.

  The signal processing unit 82 includes an amplifier and a sample-and-hold circuit provided for each data wiring 78, and an electric signal transmitted through each data wiring 78 is amplified by the amplifier and then held in the sample-and-hold circuit. The In addition, a multiplexer and an A / D (analog / digital) converter are connected in order to the output side of the sample and hold circuit, and the electrical signals held in the individual sample and hold circuits are sequentially (serially) input to the multiplexer. The digital image data is converted by an A / D converter.

  An image memory 90 is connected to the signal processing unit 82, and image data output from the A / D converter of the signal processing unit 82 is sequentially stored in the image memory 90. The image memory 90 has a storage capacity capable of storing image data for a plurality of frames, and image data obtained by imaging is sequentially stored in the image memory 90 every time a radiographic image is captured.

  The image memory 90 is connected to a cassette control unit 92 that controls the operation of the entire electronic cassette 32. The cassette control unit 92 includes a microcomputer, and includes a CPU 92A, a memory 92B including a ROM and a RAM, a nonvolatile storage unit 92C including an HDD (Hard Disk Drive), a flash memory, and the like.

  A wireless communication unit 94 is connected to the cassette control unit 92. The wireless communication unit 94 corresponds to a wireless local area network (LAN) standard represented by IEEE (Institute of Electrical and Electronics Engineers) 802.11a / b / g / n, etc. Control the transmission of various information between them. The cassette control unit 92 can wirelessly communicate with the console 42 via the wireless communication unit 94, and can transmit and receive various information to and from the console 42.

  On the other hand, the radiation detection unit 62 is provided with the same number of wirings 160 as the sensor units 146, and each sensor unit 146 of the radiation detection unit 62 is connected to the signal detection unit 162 via a different wiring 160. Yes. The signal detection unit 162 includes an amplifier, a sample hold circuit, and an A / D converter provided for each wiring 160, and is connected to the cassette control unit 92. Under the control of the cassette control unit 92, the signal detection unit 162 samples signals transmitted from the individual sensor units 146 via the wiring 160 at predetermined intervals, converts the sampled signals into digital data, and converts the cassettes into the cassette data. The data is sequentially output to the control unit 92.

  Further, the electronic cassette 32 is provided with a power supply unit 96, and the various electronic circuits described above (gate line driver 80, signal processing unit 82, image memory 90, wireless communication unit 94, cassette control unit 92, signal detection unit 162). Etc.) are connected to the power supply unit 96 (not shown), and are operated by the power supplied from the power supply unit 96. The power supply unit 96 incorporates the aforementioned battery (secondary battery) 96A so as not to impair the portability of the electronic cassette 32, and supplies power from the charged battery 96A to various electronic circuits.

  As shown in FIG. 9, the console 42 is composed of a computer, a CPU 104 that controls the operation of the entire apparatus, a ROM 106 that stores various programs including a control program in advance, a RAM 108 that temporarily stores various data, and various data Are connected to each other via a bus. In addition, a communication I / F unit 132 and a wireless communication unit 118 are connected to the bus, the display 100 is connected via the display driver 112, and the operation panel 102 is further connected via the operation input detection unit 114. .

  The communication I / F unit 132 is connected to the radiation generator 34 via the connection terminal 42 </ b> A and the communication cable 35. The console 42 (the CPU 104 thereof) transmits / receives various information such as an exposure condition to / from the radiation generator 34 via the communication I / F unit 132. The wireless communication unit 118 has a function of performing wireless communication with the wireless communication unit 94 of the electronic cassette 32, and the console 42 (the CPU 104) transmits and receives various information such as image data to and from the electronic cassette 32. 118. The display driver 112 generates and outputs signals for displaying various information on the display 100, and the console 42 (the CPU 104 of the console 42) displays an operation menu, a captured radiation image, and the like on the display 100 via the display driver 112. Display. The operation panel 102 includes a plurality of keys, and various information and operation instructions are input. The operation input detection unit 114 detects an operation on the operation panel 102 and notifies the CPU 104 of the detection result.

  The radiation generator 34 also includes a communication I / F unit 132 that transmits and receives various types of information such as an exposure condition between the radiation source 130 and the console 42, and an exposure condition (this exposure) received from the console 42. And a radiation source controller 134 for controlling the radiation source 130 based on the conditions (including the tube voltage and tube current information).

  Next, the operation of this embodiment will be described. Since the electronic cassette 32 according to the present embodiment has a configuration in which the radiation detection unit 62, the partial reflection layer 170, the radiation detector 60, the scintillator 71, and the total reflection layer 172 are sequentially stacked along the radiation arrival direction. With the addition of the radiation detector 62 to the electronic cassette 32, it is possible to prevent the size of the electronic cassette 32 along the direction parallel to the irradiation surface 56 from increasing (the area of the irradiation surface 56 increases). it can.

  In addition, the electronic cassette 32 according to the present embodiment is provided with the radiation detection unit 62 on the opposite side of the scintillator 71 with the radiation detector 60 interposed therebetween. However, the electronic cassette 32 is light transmissive as the insulating substrate 64 constituting the radiation detector 60. Is used so that the light emitted from the scintillator 71 is transmitted through the radiation detector 60 and is also incident on the radiation detector 62, so that the radiation detector 60 and the radiation detector 62 are connected to the scintillator 71. Therefore, it is not necessary to provide a scintillator corresponding to the radiation detector 60 and a scintillator corresponding to the radiation detector 62, and the number of scintillators provided in the electronic cassette 32 can be reduced. Can be reduced (only one scintillator is required).

  Further, the electronic cassette 32 according to the present embodiment uses an insulating substrate 64 constituting the radiation detector 60 as a support for supporting the radiation detection unit 62, and the radiation detector 60 and the radiation detection unit 62 are the same. Since it is provided on the support (insulating substrate 64), it is not necessary to separately provide a support for supporting the radiation detection unit 62, and the number of supports (substrate or base) provided in the electronic cassette 32 can be reduced.

  Furthermore, in the electronic cassette 32 according to the present embodiment, the photoelectric conversion film 147C of the radiation detector 62 is made of an organic photoelectric conversion material, so the scintillator 71 is made of GOS, and the photoelectric converter 72 of the radiation detector 60. The photoelectric conversion film 72C is made of an organic photoelectric conversion material, and the active layer 70B of the TFT 70 is made of an amorphous oxide, so that the insulating substrate 64 is made of a light-transmitting synthetic resin and is thin. The substrate can be used. In addition, since the scintillator 71 is made of a material that does not require vapor deposition (GOS or the like) for forming the scintillator, a substrate (a substrate with high heat resistance (vapor deposition substrate)) for forming the scintillator by vapor deposition is also unnecessary.

  As described above, the electronic cassette 32 according to the present embodiment can make the insulating substrate 64 that also functions as a support for the radiation detection unit 62 thinner and the scintillator despite the addition of the radiation detection unit 62. In addition, since there is no need to add a support for the radiation detector 62 and a vapor deposition substrate for forming the scintillator is also unnecessary, the irradiated radiation is detected separately from the function of detecting the irradiated radiation as an image. The electronic cassette 32 having a function can be configured to be very thin.

  In the electronic cassette 32 according to the present embodiment, the radiation detection unit 62 is disposed on the opposite side of the scintillator 71 with the radiation detector 60 interposed therebetween, and the partial reflection layer 170 includes the radiation detector 60 and the radiation detection unit 62. Since the light is emitted between the scintillator 71 and the light emitted from the scintillator 71 toward the radiation detector 60, the light transmitted through the radiation detector 60 and reflected by the partial reflection layer 170 is also re-transmitted to the radiation detector 60. Incident. Further, since the total reflection layer 172 is provided on the opposite side of the radiation detector 60 with the scintillator 71 interposed therebetween, the light emitted from the scintillator 71 toward the total reflection layer 172 side is also totally transmitted to the radiation detector 60. The light is reflected by the reflective layer 172, passes through the scintillator 71, and enters. Therefore, the amount of light received by the radiation detector 60 is increased as compared with the case where the partial reflection layer 170 and the total reflection layer 172 are not provided, and the sensitivity of image detection by the radiation detector 60 is improved.

  Although the amount of light received by the radiation detection unit 62 is reduced by providing the partial reflection layer 170 as compared to the case where the partial reflection layer 170 is not provided, the radiation detection unit 62 detects the irradiation timing and dose of radiation. Since the resolution as in the case of detecting an image is not required, for example, the arrangement pitch of the sensor units 146 is increased, and the area of the light receiving region of each sensor unit 146 is increased (for example, 1 cm × 1 cm or more). By adopting the configuration, it is possible to compensate for a decrease in sensitivity of the radiation detection unit 62 due to a decrease in the amount of received light, and thereby it is possible to accurately detect the irradiation timing and dose of radiation.

  Next, radiographic imaging in the radiological information system 10 (radiological imaging system 18) will be described. When radiographing is performed, the terminal device 12 (see FIG. 1) accepts an imaging request from a doctor or a radiographer. In the imaging request, a patient to be imaged, an imaging region to be imaged, an imaging mode (still image shooting or moving image shooting) are specified, and tube voltage, tube current, and the like are specified as necessary. The terminal device 12 notifies the RIS server 14 of the contents of the accepted imaging request. The RIS server 14 stores the contents of the imaging request notified from the terminal device 12 in the database 14A. The console 42 accesses the RIS server 14 to acquire the content of the imaging request and the attribute information of the patient to be imaged from the RIS server 14, and displays the content of the imaging request and the attribute information of the patient on the display 100 (see FIG. 8). ).

  The radiographer (radiologist) performs preparatory work for radiographic imaging based on the content of the radiography request displayed on the display 100. For example, when imaging the affected area of the subject lying on the prone table 46 shown in FIG. 2, an electronic cassette 32 is placed between the prone position 46 and the subject's imaging site in accordance with the imaging site. Deploy. The photographer designates a tube voltage, a tube current, and the like when the operation panel 102 is irradiated with the radiation X.

  Here, in the present embodiment, at the time of capturing a radiographic image, an automatic irradiation that controls the irradiation of radiation from the radiation source 130 by detecting the cumulative value of the radiation dose to the electronic cassette 32 using the radiation detector 62. Control (so-called AEC (automatic exposure control)) is performed. Specifically, the electronic cassette 32 instructs the console 42 to end the emission of radiation from the radiation source 130 when the accumulated radiation dose accumulated value reaches the upper limit value, and the radiation detector 60. Reading of the image from is started. If the radiographic image to be captured is a still image, the upper limit value of the cumulative radiation dose is set to a value that provides a clear still image as the radiographic image of the imaging region. In the case of an image, a value is set for suppressing exposure of the subject within an allowable range.

  The upper limit value of the cumulative radiation dose value may be input from the operation panel 102 by the photographer during imaging, or the upper limit value of the cumulative radiation dose value is stored in advance for each imaging region. The photographer may designate an imaging region on the operation panel 102 and read the upper limit value of the radiation dose cumulative value corresponding to the designated imaging region, or the patient may be stored in the database 14A of the RIS server 14. Each day, the daily exposure dose is stored, and based on this information, the total exposure dose of the subject within a predetermined period (for example, the last three months) is calculated, and the subject's exposure dose is calculated from the calculated total exposure dose. The allowable exposure dose in the current imaging may be calculated, and the calculated allowable exposure dose may be used as the upper limit value of the cumulative radiation dose.

  When the above-described preparatory work is completed, the photographer performs an operation for notifying the completion of the preparatory work via the operation panel 102 of the console 42, and the console 42 uses the operation as a trigger to specify the specified tube voltage and tube current. Is transmitted to the radiation generator 34 as an exposure condition, and the designated imaging mode (still image / moving image) and the upper limit value of the cumulative radiation dose are transmitted to the electronic cassette 32 as an imaging condition. The radiation source control unit 134 of the radiation generator 34 stores the exposure conditions received from the console 42 in a built-in memory or the like, and the cassette control unit 92 of the electronic cassette 32 stores the imaging conditions received from the console 42 in the storage unit 92C. Remember.

  When the transmission of the information to the radiation generator 34 and the electronic cassette 32 is normally completed, the console 42 notifies the photographer that the photographing is possible by switching the display 100 and confirms this notification. The photographer who has performed the operation instructs the start of shooting via the operation panel 102 of the console 42. As a result, the console 42 transmits an instruction signal instructing the start of exposure to the radiation generator 34, and the radiation generator 34 emits radiation with a tube voltage and a tube current corresponding to the exposure conditions received in advance from the console 42. Radiation is emitted from the source 130.

  On the other hand, when the cassette control unit 92 of the electronic cassette 32 receives the shooting condition from the console 42, the CPU 92A executes the shooting control program stored in advance in the storage unit 92C to perform the shooting control process shown in FIG.

In this imaging control process, first, in step 250, the radiation dose cumulative value stored in a predetermined area on the memory 92B is initialized to zero. In the next step 252, it is determined whether or not the designated shooting mode is a moving image shooting mode. If the specified shooting mode is the still image shooting mode, the determination is negative and the process proceeds to step 256. However, if the specified shooting mode is the moving image shooting mode, the determination in step 252 is affirmed and step 254 is performed. Then, after setting a shooting period corresponding to the frame rate of the moving image to be shot, the flow moves to step 256.
In step 256, the level of the signal supplied from the gate line driver 80 to the TFT 70 via the gate wiring 76 is switched to the level at which the TFT 70 is turned on simultaneously for all the gate wirings 76 of the radiation detector 60. As a result, all the TFTs 70 of the radiation detector 60 are turned on. As a result, the charges accumulated in the storage capacitors 68 of the individual pixel portions 74 of the radiation detector 60 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion portion 72) are discarded and stored in the electronic cassette 32. Until the radiation is irradiated, the dark current output from the photoelectric conversion unit 72 of each pixel unit 74 is also prevented from being accumulated as a charge.

  In the next step 258, the output signal transmitted from each sensor unit 146 of the radiation detection unit 62 via the wiring 160 is acquired as digital data (radiation dose detection value) via the signal detection unit 162. Note that the level of the output signal from each sensor unit 146 of the radiation detector 62 depends on the amount of light received from the scintillator 71 and transmitted through the radiation detector (TFT substrate) 60 and received by each sensor unit 146. The amount of light received by each sensor unit 146 changes according to the amount of light emitted from the scintillator 71, and the amount of light emitted from the scintillator 71 changes according to the amount of radiation applied to the electronic cassette 32. Therefore, the value of the above digital data corresponds to the radiation dose detection value for the electronic cassette 32 by the radiation detector 62.

  In step 260, based on the radiation dose detection value acquired from each sensor unit 146 of the radiation detection unit 62, it is determined whether or not the radiation dose detection value is equal to or greater than a threshold value. It is determined whether irradiation has started. Note that, as the radiation dose detection value to be compared with the threshold value, an average value of the radiation dose detection values acquired from each sensor unit 146 may be used, but the subject to be imaged in the irradiation surface 56 of the electronic cassette 32 may be used. As for a portion irradiated with radiation that has passed through the body of the subject, since a part of the radiation is absorbed by the body of the subject to be irradiated, the radiation dose is reduced. It is preferable to use an irradiation amount detection value acquired from the sensor unit 146 corresponding to a portion that is directly irradiated (irradiated without passing through the body of the subject).

  In this aspect, the sensor unit 146 using the irradiation amount detection value is disposed, for example, at a position close to any one of the four corners of the irradiation surface 56 that is rarely irradiated with radiation that has passed through the body of the subject. The sensor unit 146 can be applied. In addition, since the range in which the radiation from the radiation source 130 is directly irradiated on the irradiation surface 56 differs depending on the imaging region, information on the imaging region is acquired from the console 42, and according to the imaging region represented by the acquired information. The sensor unit 146 that uses the detected dose value may be switched.

  If the determination in step 260 is negative, the process returns to step 258, and steps 258 and 260 are repeated until the determination in step 260 is positive. When the emission of radiation from the radiation source 130 is started and the emitted radiation is irradiated on the electronic cassette 32 after a part of the radiation passes through the body of the subject, irradiation of the radiation acquired in step 258 is performed. If the amount detection value is equal to or greater than the threshold value, the determination in step 260 is affirmed and the process proceeds to step 262. In step 262, the level of a signal supplied from the gate line driver 80 to the TFT 70 via the gate wiring 76 is switched to a level that turns off the TFT 70 by simultaneously performing all the gate wirings 76 of the radiation detector 60. All the TFTs 70 of the radiation detector 60 are turned off. As a result, the accumulation of electric charges in the storage capacitors 68 of the individual pixel units 74 of the radiation detector 60 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion unit 72) is started.

  In the next step 264, it is determined whether or not the designated shooting mode is a moving image shooting mode. If the designated photographing mode is the still image photographing mode, the determination is negative and the routine proceeds to step 266, where the radiation dose detection value is acquired from each sensor unit 146 of the radiation detection unit 62. In step 268, it is determined whether or not the radiation dose detection value acquired from each sensor unit 146 is 0 or a value close to 0. This determination determines whether or not the emission of radiation from the radiation source 130 is stopped. If the determination is negative, the process proceeds to step 270 and the radiation dose detection value (for example, acquired in step 266) (for example, (Average value of radiation dose acquired from each sensor unit 146) is added to the cumulative value of radiation dose. In the next step 272, it is determined whether or not the cumulative dose of radiation has reached or exceeded the upper limit value received from the console 42. If this determination is also negative, the process returns to step 266, and steps 266 to 272 are repeated until the determination of step 268 or step 272 is affirmed.

  In the still image capturing mode, when the exposure end timing arrives, the radiation generation apparatus 34 is instructed to end the emission of radiation from the console 42, and the radiation generation apparatus 34 stops the emission of radiation from the radiation source 130. In this case, by stopping irradiation of radiation to the electronic cassette 32, the determination in step 268 is affirmed and the process proceeds to step 276, and the TFTs 70 of the radiation detector 60 are sequentially turned on in units of gate wirings 76, The charges accumulated in the storage capacitor 68 of each pixel unit 74 (and between the upper electrode 72A and the lower electrode 72B of the photoelectric conversion unit 72) are sequentially read out as a radiographic image signal. In step 278, the radiographic image data obtained by the charge readout in step 276 is transmitted to the console 42 by wireless communication, and the imaging control process ends.

  If the cumulative dose of radiation reaches the upper limit before the end of exposure timing, the determination at step 272 is affirmed before the determination at step 268 is affirmed, and the routine proceeds to step 274. Then, a signal for instructing the end of the exposure is transmitted to the console 42 by wireless communication. As a result, the console 42 instructs the radiation generator 34 to end the emission of radiation, and the radiation generator 34 stops the emission of radiation from the radiation source 130. Thereby, the shooting of the still image is stopped. In step 276, charge is read from each pixel unit 74 of the radiation detector 60. In step 278, radiation image data is transmitted to the console 42, and the imaging control process is terminated.

  On the other hand, when the photographing mode is the moving image photographing mode, the determination in step 264 is affirmed and the process proceeds to step 280, and the radiation from each sensor unit 146 of the radiation detection unit 62 is performed in the same manner as in steps 266 to 272 described above. (Step 280), it is determined whether the acquired radiation dose detection value is 0 or a value close to 0 (step 282), and if the determination is negative, the acquired radiation irradiation The amount detection value is added to the radiation dose cumulative value (step 284), and it is determined whether the radiation dose cumulative value is equal to or greater than the upper limit value received from the console 42 (step 286).

  If the determination in step 286 is negative, the process proceeds to step 288, and the elapsed time since the start of imaging (after the charge readout from each pixel portion 74 of the radiation detector 60 has been performed, the previous charge Whether or not the timing for reading the charge from each pixel unit 74 of the radiation detector 60 has arrived based on whether or not the elapsed time since reading has reached a time corresponding to the imaging cycle set in the previous step 254. Determine. If this determination is negative, the process returns to step 280, and steps 280 to 288 are repeated until the determination of any of step 282, step 286, and step 288 is affirmed. Further, when the charge read timing arrives, the determination in step 288 is affirmed and the process proceeds to step 290, where charge is read from each pixel unit 74 of the radiation detector 60 in the same manner as in step 276 described above. At 292, the radiation image data is transmitted to the console 42 and the process returns to step 280.

  In the moving image shooting mode, the photographer gives an instruction to end shooting (end of exposure) via the operation panel 102, whereby the console 42 instructs the radiation generator 34 to end radiation emission, and the radiation generator 34 The emission of radiation from the radiation source 130 is stopped. In this case, the irradiation of the electronic cassette 32 is stopped, so that the determination in step 282 is affirmed, and the imaging control process ends.

  In addition, when the cumulative dose of radiation reaches the upper limit before the photographing end (exposure end) is instructed by the photographer, the determination in step 286 is made before the determination in step 282 is affirmed. When the result is affirmative, the process proceeds to step 274, a signal instructing the end of exposure is transmitted to the console 42 by wireless communication, and the imaging control process is terminated. As a result, the console 42 instructs the radiation generation apparatus 34 to end the emission of radiation, and the radiation generation apparatus 34 stops the emission of radiation from the radiation source 130, thereby stopping the moving image capturing.

  In the above description, a mode has been described in which shooting of a moving image is stopped when the radiation exposure cumulative value exceeds the upper limit in the moving image shooting mode. However, the radiation exposure cumulative value exceeds the upper limit. The console 42 may perform processing for displaying a warning on the display 100, or the console 42 may reduce at least one of the tube voltage and the tube current with respect to the radiation generator 34. The radiation dose per unit time irradiated from the radiation source 130 may be reduced by instructing the change to the exposure condition.

  Next, another configuration of the radiation detection panel according to the present invention will be described. In the electronic cassette 32 described above, as schematically shown in FIG. 10C, a scintillator 71 made of a material that does not require vapor deposition (such as GOS) is disposed on one surface of the radiation detector 60. In addition, the radiation detector 62 is provided on the other surface of the radiation detector 60, and the partially reflective layer 170 is opposite to the radiation detector 60 side of the scintillator 71 between the radiation detector 60 and the radiation detector 62. The total reflection layer 172 is provided on each side, and radiation is received from the radiation detection unit 62 side. The radiation detector 60 (first detection means) uses light emitted from the scintillator 71 (light emitting unit) as an image. Then, the radiation detection unit 62 (second detection means) detects light emitted from the scintillator 71 (light emitting unit).

In this configuration, the radiation detector 60 is arranged on the radiation irradiation surface side of the scintillator 71. However, the method of arranging the light emitting unit (scintillator) and the light detecting unit (radiation detector) in such a positional relationship is “surface This is referred to as “reading system (ISS: Irradiation Side Sampling)”. Since the scintillator emits light more strongly on the radiation incident side, the “surface reading method (ISS)” in which the light detection unit (radiation detector) is arranged on the radiation incident side of the scintillator is the opposite side of the radiation irradiation surface of the light emission unit (scintillator) Since the light detection unit and the light emission position of the scintillator are closer to each other than the “PSS (Penetration Side Sampling)” in which the light detection unit (radiation detector) is placed on the surface, the resolution of the radiographic image obtained by imaging is reduced. Further, the sensitivity of the radiation detection panel (electronic cassette) is improved as a result of increasing the amount of light received by the light detection unit (radiation detector) (corresponding to the invention of claim 5).

  The positional relationship between the scintillator 71 and the radiation detector 60 is “surface reading method”, and the configuration of the radiation detection panel using the scintillator made of a material that does not require vapor deposition is other than the configuration shown in FIG. The configuration shown in FIGS. 10A, 10B, and 10D can be considered.

  The configuration shown in FIG. 10A is the same as the configuration shown in FIG. 10C in the positional relationship between the scintillator 71, the radiation detector 60, the radiation detection unit 62, the partial reflection layer 170, and the total reflection layer 172. After the radiation detector 62 is formed on the base 120 as a support, the radiation detector 60 is attached to the surface of the radiation detector 60 opposite to the scintillator 71 via the partial reflection layer 170 as shown in FIG. The configuration is different from that shown in FIG. In this configuration, the thickness is increased by the thickness of the base 120 as compared with the configuration shown in FIG. 10C. However, the base 120 may be made of a synthetic resin (for example, polyethylene terephthalate) listed above as an example. A flexible substrate can be applied, and the thickness of the base 120 itself can be suppressed to about 0.1 mm, for example.

  Also in this configuration, the radiation detector 60 transmits the radiation detector 60 out of the light emitted from the scintillator 71 to the radiation detector 60 side, in addition to the light directly incident from the scintillator 71, and the partially reflective layer. The light reflected by 170 is also re-incident, emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the total reflection layer 172, and also transmitted through the scintillator 71, so that the partially reflective layer 170 is also incident. As compared with the case where the total reflection layer 172 is not provided, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.

  In the configuration shown in FIG. 10A, when the radiation detection unit 62 is light transmissive, a total reflection layer 173 may be added between the radiation detection unit 62 and the base 120. Good (see FIG. 14A). In this case, out of the light transmitted from the scintillator 71 through the radiation detector 60 and the partial reflection layer 170 and incident on the radiation detection unit 62, the light transmitted through the radiation detection unit 62 is totally reflected by the total reflection layer 173 and emitted. By re-entering the detection unit 62, the amount of light received by the radiation detection unit 62 increases, and the radiation detection sensitivity of the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 14A is an example of the total reflection means according to the eighth aspect. Further, the total reflection layer 173 may be provided on the surface of the base 120 opposite to the radiation detection unit 62 instead of the position shown in FIG.

  10B, the radiation detector 60 is disposed on one surface of the scintillator 71, and the base 120 on which the radiation detector 62 is formed on the other surface side of the scintillator 71 The scintillator 71 side is arranged in a direction to be the back surface (surface opposite to the surface on which the radiation detection unit 62 is formed), and a partial reflection layer 170 is provided between the scintillator 71 and the base 120. The partial reflection layer 170 in this configuration is an example of a partial reflection unit “arranged between the light emitting unit and the second detection unit”. In this configuration, the positional relationship between the scintillator 71 and the radiation detection unit 62 is the “rear surface reading method”, and the amount of light received by the radiation detection unit 62 decreases, but the radiation detection unit 62 detects the irradiation timing and the irradiation amount of radiation. Therefore, for example, it is possible to adopt a configuration in which the arrangement pitch of the sensor units 146 is increased and the area of the light receiving region of each sensor unit 146 is increased (for example, 1 cm × 1 cm or more). Therefore, it is possible to compensate for a decrease in sensitivity due to a decrease in the amount of received light.

  Also in this configuration, in addition to the light directly incident from the scintillator 71, the radiation detector 60 is emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the partial reflection layer 170, and transmitted through the scintillator 71. Therefore, the amount of light received by the radiation detector 60 is increased as compared with the case where the partial reflection layer 170 is not provided, and the sensitivity of image detection by the radiation detector 60 is improved.

  In the configuration shown in FIG. 10B, when the radiation detector 60 is light transmissive, a total reflection layer 173 is added to the radiation detector 60 on the side opposite to the scintillator 71 side. Alternatively, when the radiation detection unit 62 is light transmissive, a total reflection layer 174 may be added on the opposite side of the radiation detection unit 62 from the scintillator 71 side (see FIG. 14 (B)). In this configuration, the light that has entered the radiation detector 60 from the scintillator 71 side and has passed through the radiation detector 60 is reflected by the total reflection layer 173 and re-entered, and thus the total reflection layer 173 is provided. The amount of light received by the radiation detector 60 is increased as compared with the case where the radiation detector is not present, and the sensitivity of image detection by the radiation detector 60 is improved. In addition, since the light incident on the scintillator 71 side and transmitted through the radiation detection unit 62 is also reflected and re-entered on the radiation detection unit 62 from the scintillator 71 side, the total reflection layer 174 is not provided. As a result, the amount of light received by the radiation detector 62 is increased, and the sensitivity of radiation detection by the radiation detector 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 14B is an example of the total reflection unit according to the seventh aspect, and the total reflection layer 174 is an example of the total reflection unit according to the eighth aspect.

  The configuration shown in FIG. 10D is similar to the configuration shown in FIG. 10B on the side opposite to the scintillator 71 with the radiation detector 60 interposed therebetween, and the radiation detection unit has the same configuration as the radiation detection unit 62. 63 is disposed, and a partial reflection layer 170 is also provided between the radiation detector 60 and the radiation detection unit 63. In this configuration, the thickness is increased by the thickness of the radiation detection unit 63 as compared with the configuration illustrated in FIG. 10B, but the thickness of the radiation detection unit 63 is, for example, about 0.05 mm, similar to the radiation detection unit 62. It is. In this configuration, the two radiation detection units 62 and 63 may be used for the purpose of improving the sensitivity of the radiation detection unit as a whole, for example, by adding and using the respective irradiation amount detection values. This radiation detection unit may be used for detection of the irradiation timing of the radiation to the electronic cassette 32, and the other radiation detection unit may be used for detection of the radiation irradiation amount to the electronic cassette 32. In this case, it is possible to optimize the characteristics of the radiation detection units 62 and 63 according to each application. For example, the radiation detection unit used for detecting the irradiation timing of radiation is electrostatically controlled so as to improve the response speed. While adjusting the capacitance and the wiring resistance, it is possible to adjust the area of the light receiving region so that the sensitivity of the radiation detecting unit used for detecting the radiation dose is improved.

  Also in this configuration, in addition to the light directly incident from the scintillator 71, the radiation detector 60 is emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the partial reflection layer 170, and transmitted through the scintillator 71. Since the incident light is also incident, the light is incident from the scintillator 71, passes through the radiation detector 60, and is reflected again by the partial reflection layer 170, the partial reflection layer 170 is not provided. The amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.

  In the configuration shown in FIG. 10D, when the radiation detectors 62 and 63 have light transmittance, a total reflection layer 173 is provided on the opposite side of the radiation detector 62 from the scintillator 71 side. A total reflection layer 174 may be added to each side of the radiation detector 63 opposite to the scintillator 71 (see FIG. 14D). In this configuration, the light that enters the radiation detector 62 from the scintillator 71 side and passes through the radiation detector 62 is also reflected by the total reflection layer 173 and re-entered, so the total reflection layer 173 is provided. The amount of light received by the radiation detection unit 62 is increased as compared with the case where there is not, and the sensitivity of radiation detection by the radiation detection unit 62 is improved. Similarly, the light that has entered the radiation detection unit 63 from the scintillator 71 side and has passed through the radiation detection unit 63 is reflected by the total reflection layer 174 and re-entered, and thus the total reflection layer 174 is not provided. The amount of light received by the radiation detection unit 63 is increased compared to the case, and the sensitivity of radiation detection by the radiation detection unit 63 is improved. The total reflection layers 173 and 174 in the configuration shown in FIG. 14D are an example of the total reflection means according to the eighth aspect.

  Also in the configuration shown in FIG. 10C, when the radiation detection unit 62 is light transmissive, a total reflection layer 173 is added on the opposite side of the radiation detection unit 62 from the scintillator 71 side. You may make it (refer FIG.14 (C)). In this configuration, the light that enters the radiation detector 62 from the scintillator 71 side and passes through the radiation detector 62 is also reflected by the total reflection layer 173 and re-entered, so the total reflection layer 173 is provided. The amount of light received by the radiation detection unit 62 is increased as compared with the case where there is not, and the sensitivity of radiation detection by the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 14D is an example of the total reflection means according to the eighth aspect.

  Further, as a configuration of a radiation detection panel using a scintillator that is made of a material that does not require vapor deposition, the positional relationship between the scintillator 71 and the radiation detector 60 is a “rear surface reading method”, and FIGS. The configuration shown in FIG.

  The structure shown in FIG. 11A is the same as the structure shown in FIG. 10B, and radiation comes from the opposite direction to the structure shown in FIG. In this configuration, the radiation detection unit 62 is positioned at the uppermost stream in the radiation arrival direction. However, since the radiation detection unit 62 does not absorb radiation, the scintillator is disposed even if the radiation detection unit 62 is disposed at the above position. No reduction in the amount of radiation applied to 71 occurs. When the positional relationship between the scintillator 71 and the radiation detector 60 is the “rear surface reading method”, the amount of light received by the radiation detector 60 is lower than that of the “front surface reading method”. In addition to the light that is directly incident from the scintillator 71, the light that is emitted from the scintillator 71 to the side opposite to the radiation detector 60, reflected by the partial reflection layer 170, and transmitted through the scintillator 71 is also incident. The amount of light received by the radiation detector 60 is increased as compared with the case where 170 is not provided, and the sensitivity of image detection by the radiation detector 60 is improved. Accordingly, the provision of the partial reflection layer 170 can compensate for a decrease in the amount of light received by the radiation detector 60.

  In the configuration shown in FIG. 11A, when the radiation detector 60 is light transmissive, a total reflection layer 173 is added to the radiation detector 60 on the side opposite to the scintillator 71 side. It may also be set (see FIG. 15A). In this configuration, the light that has entered the radiation detector 60 from the scintillator 71 side and has passed through the radiation detector 60 is reflected by the total reflection layer 173 and re-entered, and thus the total reflection layer 173 is provided. The amount of light received by the radiation detector 60 is increased as compared with the case where the radiation detector is not present, and the sensitivity of image detection by the radiation detector 60 is improved. The total reflection layer 173 in the configuration shown in FIG. 15A is an example of the total reflection means according to the seventh aspect.

  In addition, the structure illustrated in FIG. 11B is the same as the structure illustrated in FIG. 10A, and radiation arrives from a direction opposite to the structure illustrated in FIG. Since the radiation detector 60 in this configuration has a positional relationship with the scintillator 71 of the “rear surface reading method”, the amount of received light is lower than that of the “front surface reading method”. In addition to the light that is directly incident from the scintillator 71, the light that has been transmitted from the scintillator 71 to the radiation detector 60 side and transmitted through the radiation detector 60 and reflected by the partial reflection layer 170 is also re-incident. Since the light that is emitted from the scintillator 71 to the opposite side of the radiation detector 60, reflected by the total reflection layer 172, and transmitted through the scintillator 71 is also incident, the partial reflection layer 170 and the total reflection layer 172 are not provided. As a result, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. Therefore, by providing the partial reflection layer 170 and the total reflection layer 172, it is possible to compensate for a decrease in the amount of light received by the radiation detector 60.

  In addition, with respect to the radiation detection unit 62 in the configuration shown in FIG. 11B, the positional relationship with the scintillator 71 is the “rear surface reading method”, and light transmitted through the radiation detector 60 and the partial reflection layer 170 is incident. As a result, although the amount of received light decreases, the radiation detection unit 62 detects the irradiation timing and the amount of radiation, so for example, the arrangement pitch of the sensor units 146 is increased, and the light reception of each sensor unit 146 is performed. It is possible to adopt a configuration in which the area of the region is increased (for example, 1 cm × 1 cm or more), and this makes it possible to compensate for a decrease in sensitivity due to a decrease in the amount of received light.

  In the configuration shown in FIG. 11B, when the radiation detection unit 62 is light transmissive, a total reflection layer 173 may be added between the radiation detection unit 62 and the base 120. Good (see FIG. 15B). In this case, out of the light transmitted from the scintillator 71 through the radiation detector 60 and the partial reflection layer 170 and incident on the radiation detection unit 62, the light transmitted through the radiation detection unit 62 is totally reflected by the total reflection layer 173 and emitted. By re-entering the detection unit 62, the amount of light received by the radiation detection unit 62 increases, and the radiation detection sensitivity of the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 15B is an example of the total reflection means according to the eighth aspect. Further, the total reflection layer 173 may be provided on the surface of the base 120 opposite to the radiation detection unit 62 instead of the position shown in FIG.

  In addition, the structure illustrated in FIG. 11C is the same as the structure illustrated in FIG. 10C, and radiation arrives from a direction opposite to the structure illustrated in FIG. Similarly to the configuration shown in FIG. 11B, the radiation detector 60 in this configuration has a “rear surface reading method” as the positional relationship with the scintillator 71, but the amount of received light is lower than that of the “front surface reading method”. Even in this configuration, the radiation detector 60 transmits the radiation detector 60 out of the light emitted from the scintillator 71 to the radiation detector 60 side in addition to the light directly incident from the scintillator 71, and is partially reflected. The light reflected by the layer 170 is also re-incident, emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the total reflection layer 172, and the light that has passed through the scintillator 71 is also incident. The amount of light received by the radiation detector 60 is increased as compared with the case where the 170 and the total reflection layer 172 are not provided, and the sensitivity of image detection by the radiation detector 60 is improved. Therefore, by providing the partial reflection layer 170 and the total reflection layer 172, it is possible to compensate for a decrease in the amount of light received by the radiation detector 60.

  In addition, the radiation detection unit 62 in the configuration shown in FIG. 11C is similar to the configuration shown in FIG. 11B in that the positional relationship with the scintillator 71 is the “rear surface reading method” and the radiation detector. The amount of received light is reduced by the incidence of light that has passed through 60 and the partial reflection layer 170, but the radiation detector 62 detects the irradiation timing and dose of radiation. It is possible to adopt a configuration such as increasing the pitch and increasing the area of the light receiving region of each sensor unit 146 (for example, 1 cm × 1 cm or more), thereby reducing the sensitivity due to a decrease in the amount of light received. Can be compensated. This configuration is desirable because the thickness can be minimized among the configurations shown in FIG.

  In the configuration shown in FIG. 11C, when the radiation detection unit 62 is light transmissive, a total reflection layer 173 is added on the opposite side of the radiation detection unit 62 from the radiation detector 60. You may make it (refer FIG.15 (C)). In this case, out of the light transmitted from the scintillator 71 through the radiation detector 60 and the partial reflection layer 170 and incident on the radiation detection unit 62, the light transmitted through the radiation detection unit 62 is totally reflected by the total reflection layer 173 and emitted. By re-entering the detection unit 62, the amount of light received by the radiation detection unit 62 increases, and the radiation detection sensitivity of the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 15C is an example of the total reflection means according to the eighth aspect.

  In addition, the structure illustrated in FIG. 11D is the same as the structure illustrated in FIG. 10D, and radiation arrives from a direction opposite to the structure illustrated in FIG. Also in this configuration, as in the configuration shown in FIG. 10D, the two radiation detection units 62 and 63 add sensitivity values of the respective radiation detection units, for example, so that the sensitivity of the radiation detection unit as a whole is increased. May be used for the purpose of improving the amount of radiation, or one of the radiation detectors may be used to detect the irradiation timing of radiation to the electronic cassette 32, and the other radiation detector may be used to detect the amount of radiation applied to the electronic cassette 32. May be.

  Also in this configuration, in addition to the light directly incident from the scintillator 71, the radiation detector 60 is emitted from the scintillator 71 to the side opposite to the radiation detector 60 side, reflected by the partial reflection layer 170, and transmitted through the scintillator 71. Since the incident light is also incident, the light is incident from the scintillator 71, passes through the radiation detector 60, and is reflected again by the partial reflection layer 170, the partial reflection layer 170 is not provided. The amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.

  In the configuration shown in FIG. 11D, when the radiation detectors 62 and 63 are light transmissive, the total reflection layer 173 is provided on the opposite side of the radiation detector 62 from the scintillator 71 side. A total reflection layer 174 may be added to each side of the radiation detection unit 63 opposite to the scintillator 71 (see FIG. 15D). In this configuration, the light that enters the radiation detector 62 from the scintillator 71 side and passes through the radiation detector 62 is also reflected by the total reflection layer 173 and re-entered, so the total reflection layer 173 is provided. The amount of light received by the radiation detection unit 62 is increased as compared with the case where there is not, and the sensitivity of radiation detection by the radiation detection unit 62 is improved. Similarly, the light that has entered the radiation detection unit 63 from the scintillator 71 side and has passed through the radiation detection unit 63 is reflected by the total reflection layer 174 and re-entered, and thus the total reflection layer 174 is not provided. The amount of light received by the radiation detection unit 63 is increased compared to the case, and the sensitivity of radiation detection by the radiation detection unit 63 is improved. The total reflection layers 173 and 174 in the configuration shown in FIG. 15D are an example of the total reflection means according to the eighth aspect.

  In addition, the positional relationship between the scintillator 71 and the radiation detector 60 is “surface reading method”, and a radiation detection panel using a scintillator formed by depositing a material such as CsI on the deposition substrate 122 (see FIG. 12) is used. The configurations shown in FIGS. 12A to 12D are conceivable.

  The configuration shown in FIG. 12A is different from the configuration shown in FIG. 10A in that the vapor deposition substrate 122 is arranged on the opposite side of the radiation detector 60 with the scintillator 71 interposed therebetween. Also in this configuration, since the light reflected by the partial reflection layer 170 is incident again on the radiation detector 60, the light reflected by the total reflection layer 172 and transmitted through the scintillator 71 is also incident on the radiation detector 60. The amount of light received by the detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.

  Also in the configuration shown in FIG. 12A, when the radiation detection unit 62 has light transmittance, a total reflection layer 173 may be added between the radiation detection unit 62 and the base 120. (See FIG. 16A). Thereby, the light totally reflected by the total reflection layer 173 is re-incident on the radiation detection unit 62, whereby the amount of light received by the radiation detection unit 62 is increased, and the radiation detection sensitivity of the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 16A is an example of the total reflection means according to the eighth aspect. Further, the total reflection layer 173 may be provided on the opposite side of the base 120 from the radiation detection unit 62 instead of the position shown in FIG.

  Further, the configuration shown in FIG. 12B is different from the configuration shown in FIG. 10B in that the vapor deposition substrate 122 is disposed between the scintillator 71 and the base 120. In this configuration, since the light emitted from the scintillator 71 passes through the vapor deposition substrate 122 and the base 120 and then enters the radiation detection unit 62, the vapor deposition substrate 122 is used as a vapor deposition substrate in terms of radiation transmittance and cost. It is necessary to use a substrate having optical transparency instead of an Al substrate or the like that is frequently used. Examples of substrates that can be used for vapor deposition and have optical transparency include glass substrates, but other than that, aromatic polyimide is used as a raw material, and shows high optical transparency in the visible light range, and also has excellent heat resistance. Transparent plastic substrates for transparent displays with transparent polyimide substrates (for example, heat-resistant temperature of about 300 ° C or higher) and excellent optical properties (for example, light transmittance of 90% or higher) and heat resistance (for example, 200 ° C or higher) Substrate material (development name: OPS) (Tosoh Corp., “Development of transparent plastic substrate material for flexible display”, [online], [Search July 27, 2010], Internet <URL: http: // www .tosoh.co.jp / technology / report / pdfs / 2006_03_02.pdf>), aramid film (Toray Industries, Inc., “Halogen-free difficulties”, colorless and transparent, highly transparent and highly heat-resistant. Flammable colorless and transparent aramidov Rum is developed ", [online], [searched July 27, 2010], Internet <URL: See http://www.toray.co.jp/news/film/nr100210.html>) It is also possible to use substrates (note that these substrates can also be used as “a heat-resistant and flexible support that can be used for vapor deposition” described in claim 4). Also in this configuration, since the light reflected by the partial reflection layer 170 and transmitted through the scintillator 71 is also incident on the radiation detector 60, the amount of light received by the radiation detector 60 increases, and image detection by the radiation detector 60 is performed. The sensitivity is improved.

  In the configuration shown in FIG. 12B, when the radiation detector 60 is light transmissive, a total reflection layer 173 is added to the radiation detector 60 on the side opposite to the scintillator 71 side, When the radiation detection unit 62 has optical transparency, a total reflection layer 174 may be added to the radiation detection unit 62 on the side opposite to the scintillator 71 side (see FIG. 16B). Thereby, since the light reflected by the total reflection layer 173 is re-incident on the radiation detector 60, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. In addition, since the light reflected by the total reflection layer 174 is incident on the radiation detection unit 62 again, the amount of light received by the radiation detection unit 62 is increased, and the sensitivity of radiation detection by the radiation detection unit 62 is improved. In addition, the total reflection layer 173 in the configuration shown in FIG. 16B is an example of the total reflection unit according to the seventh aspect, and the total reflection layer 174 is an example of the total reflection unit according to the eighth aspect.

  The configuration shown in FIG. 12C is different from the configuration shown in FIG. 10C in that the vapor deposition substrate 122 is disposed on the opposite side of the radiation detector 60 with the scintillator 71 interposed therebetween. Also in this configuration, since the light reflected by the partial reflection layer 170 is incident again on the radiation detector 60, the light reflected by the total reflection layer 172 and transmitted through the scintillator 71 is also incident on the radiation detector 60. The amount of light received by the detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. This configuration is desirable because the thickness can be minimized among the configurations shown in FIG.

  Also in the configuration shown in FIG. 12C, when the radiation detector 62 is light transmissive, a total reflection layer 173 is added on the opposite side of the radiation detector 62 from the scintillator 71 side. (See FIG. 16C). Thereby, since the light reflected by the total reflection layer 173 is re-incident on the radiation detection unit 62, the amount of light received by the radiation detection unit 62 is increased, and the sensitivity of radiation detection by the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 16C is an example of the total reflection means according to the eighth aspect.

  Further, the structure illustrated in FIG. 12D is different from the structure illustrated in FIG. 10D in that the vapor deposition substrate 122 is disposed between the scintillator 71 and the base 120. Also in this configuration, similarly to the configuration shown in FIG. 12B, the light emitted from the scintillator 71 is incident on the radiation detection unit 62 after passing through the vapor deposition substrate 122 and the base 120. It is necessary to use the glass substrate described above or another substrate having light transmittance. The two radiation detection units 62 and 63 in this configuration may also be used for the purpose of improving the sensitivity of the entire radiation detection unit, as in the configuration shown in FIGS. 10D and 11D. One radiation detection unit may be used for detection of radiation irradiation timing to the electronic cassette 32, and the other radiation detection unit may be used for detection of radiation irradiation amount to the electronic cassette 32. Also in this configuration, the light that is emitted from the scintillator 71 to the vapor deposition substrate 122 side, reflected by the partial reflection layer 170 and transmitted through the scintillator 71, and the light that passes through the radiation detector 60 and reflected by the partial reflection layer 170 are reflected. Since the light is incident on the radiation detector 60, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.

  In the configuration shown in FIG. 12D, when the radiation detectors 62 and 63 are light transmissive, the total reflection layer 173 is provided on the opposite side of the radiation detector 62 from the scintillator 71 side. A total reflection layer 174 may be added to the radiation detector 63 on the side opposite to the scintillator 71 (see FIG. 16D). Thereby, the light reflected by the total reflection layer 173 is incident on the radiation detection unit 62, and the light reflected by the total reflection layer 174 is incident on the radiation detection unit 63. The amount of received light increases, and the sensitivity of radiation detection by the radiation detectors 62 and 63 is improved. The total reflection layers 173 and 174 in the configuration shown in FIG. 16D are an example of the total reflection means according to the eighth aspect.

  In addition, as a configuration of a radiation detection panel using a scintillator formed by depositing a material such as CsI on the deposition substrate 122 in a positional relationship between the scintillator 71 and the radiation detector 60 in the “backside scanning method”, FIG. The configurations shown in A) to (D) are conceivable.

  The structure shown in FIG. 13A is the same as the structure shown in FIG. 12B, and radiation comes from the opposite direction to the structure shown in FIG. Also in this configuration, since the light emitted from the scintillator 71 is incident on the radiation detection unit 62 after passing through the vapor deposition substrate 122 and the base 120, the vapor deposition substrate 122 has the above-described glass substrate and other light transmission properties. It is necessary to use a substrate. Also in this configuration, since the light reflected by the partial reflection layer 170 and transmitted through the scintillator 71 is also incident on the radiation detector 60, the amount of light received by the radiation detector 60 increases, and image detection by the radiation detector 60 is performed. The sensitivity is improved.

  In the configuration shown in FIG. 13A, when the radiation detector 60 is light transmissive, a total reflection layer 173 is added to the radiation detector 60 on the side opposite to the scintillator 71 side, When the radiation detection unit 62 has optical transparency, a total reflection layer 174 may be added to the radiation detection unit 62 on the side opposite to the scintillator 71 side (see FIG. 17A). Thereby, since the light reflected by the total reflection layer 173 is re-incident on the radiation detector 60, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. In addition, since the light reflected by the total reflection layer 174 is incident on the radiation detection unit 62 again, the amount of light received by the radiation detection unit 62 is increased, and the sensitivity of radiation detection by the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 17A is an example of the total reflection unit according to the seventh aspect, and the total reflection layer 174 is an example of the total reflection unit according to the eighth aspect.

  The structure shown in FIG. 13B is the same as the structure shown in FIG. 12A, and radiation comes from the opposite direction to the structure shown in FIG. Also in this configuration, since the light reflected by the partial reflection layer 170 is incident again on the radiation detector 60, the light reflected by the total reflection layer 172 and transmitted through the scintillator 71 is also incident on the radiation detector 60. The amount of light received by the detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. Further, in this configuration, the positional relationship between the scintillator 71 and the radiation detection unit 62 is the “rear surface reading method”, and light transmitted through the radiation detector 60 and the partial reflection layer 170 is incident on the radiation detection unit 62. As a result, the amount of light received by the radiation detection unit 62 decreases, but the arrangement pitch of the sensor units 146 of the radiation detection unit 62 is increased, and the area of the light reception region of each sensor unit 146 is increased (for example, 1 cm × 1 cm or more). Thus, it is possible to compensate for a decrease in sensitivity due to a decrease in the amount of received light.

  In the configuration shown in FIG. 13A as well, when the radiation detection unit 62 has light transmittance, a total reflection layer 173 may be added between the radiation detection unit 62 and the base 120. (See FIG. 17B). Thereby, the light totally reflected by the total reflection layer 173 is re-incident on the radiation detection unit 62, whereby the amount of light received by the radiation detection unit 62 is increased, and the radiation detection sensitivity of the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 17B is an example of the total reflection means according to the eighth aspect. Further, the total reflection layer 173 may be provided on the opposite side of the base 120 from the radiation detection unit 62 instead of the position shown in FIG.

  The structure illustrated in FIG. 13C is the same as the structure illustrated in FIG. 12C, and radiation arrives from a direction opposite to the structure illustrated in FIG. This configuration is desirable because the thickness can be minimized among the configurations shown in FIG. Also in this configuration, since the light reflected by the partial reflection layer 170 is incident again on the radiation detector 60, the light reflected by the total reflection layer 172 and transmitted through the scintillator 71 is also incident on the radiation detector 60. The amount of light received by the detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved. In this configuration as well, the positional relationship between the scintillator 71 and the radiation detection unit 62 is the “rear surface reading method” as well as the configuration shown in FIG. 13B, and the radiation detector 60 and the partial reflection layer 170 are transmitted. Although the amount of light received by the radiation detection unit 62 is reduced by the incident light entering the radiation detection unit 62, the arrangement pitch of the sensor units 146 of the radiation detection unit 62 is increased, and the area of the light reception region of each sensor unit 146 is increased. By increasing (for example, 1 cm × 1 cm or more), etc., it is possible to compensate for a decrease in sensitivity due to a decrease in the amount of received light.

  Also in the configuration shown in FIG. 13C, when the radiation detection unit 62 has light transmittance, a total reflection layer 173 is added to the radiation detection unit 62 on the side opposite to the scintillator 71 side. (See FIG. 17C). Thereby, since the light reflected by the total reflection layer 173 is re-incident on the radiation detection unit 62, the amount of light received by the radiation detection unit 62 is increased, and the sensitivity of radiation detection by the radiation detection unit 62 is improved. The total reflection layer 173 in the configuration shown in FIG. 17C is an example of the total reflection means according to the eighth aspect.

  The structure illustrated in FIG. 13D is the same as the structure illustrated in FIG. 12D, and radiation comes from the opposite direction to the structure illustrated in FIG. Also in this configuration, similarly to the configuration shown in FIG. 12D, the two radiation detection units 62 and 63 add sensitivity values of the respective radiation amount detection values, for example, thereby using the sensitivity of the radiation detection unit as a whole. May be used for the purpose of improving the amount of radiation, or one of the radiation detectors may be used to detect the irradiation timing of radiation to the electronic cassette 32, and the other radiation detector may be used to detect the amount of radiation applied to the electronic cassette 32. May be. Also in this configuration, the light that is emitted from the scintillator 71 to the vapor deposition substrate 122 side, reflected by the partial reflection layer 170 and transmitted through the scintillator 71, and the light that passes through the radiation detector 60 and reflected by the partial reflection layer 170 are reflected. Since the light is incident on the radiation detector 60, the amount of light received by the radiation detector 60 is increased, and the sensitivity of image detection by the radiation detector 60 is improved.

  In the configuration shown in FIG. 13D, when the radiation detectors 62 and 63 are light transmissive, the total reflection layer 173 is provided on the opposite side of the radiation detector 62 from the scintillator 71 side. A total reflection layer 174 may be added to the radiation detector 63 on the side opposite to the scintillator 71 (see FIG. 17D). Thereby, the light reflected by the total reflection layer 173 is incident on the radiation detection unit 62, and the light reflected by the total reflection layer 174 is incident on the radiation detection unit 63. The amount of received light increases, and the sensitivity of radiation detection by the radiation detectors 62 and 63 is improved. The total reflection layers 173 and 174 in the configuration shown in FIG. 17D are an example of the total reflection means according to the eighth aspect.

  Further, as the photoelectric conversion unit 72 of the radiation detector 60, an organic CMOS sensor having a photoelectric conversion film made of a material containing an organic photoelectric conversion material may be used. As a TFT substrate of the radiation detector 60, an organic material as the TFT 70 may be used. Alternatively, an organic TFT array sheet in which organic transistors including the above are arranged in an array on a flexible sheet may be used. Said organic CMOS sensor is disclosed by Unexamined-Japanese-Patent No. 2009-212377, for example. The above organic TFT array sheet is, for example, “Nihon Keizai Shimbun,“ The University of Tokyo, “Developing an Ultra Flexible” Organic Transistor ”, [online], [searched on April 11, 2011], Internet <URL: http://www.nikkei.com/tech/trend/article/g=96958A9C93819499E2EAE2E0E48DE2EAE3E3E0E2E3E2E2E2E2E2E2E2;p=9694E0E7E2E6E0E2E3E2E2E0E2E0> ”

  Even if the TFT 70 or the like of the radiation detector 60 does not have optical transparency (for example, an active layer 70B formed of a material having no optical transparency such as amorphous silicon), By disposing on a transparent insulating substrate 64 (for example, a flexible substrate made of synthetic resin), a portion of the insulating substrate 64 where the TFT 70 or the like is not formed is configured to transmit light. It is possible to obtain a radiation detector 60 having optical transparency. Arranging the TFT 70 or the like having a non-light-transmitting configuration on the light-transmitting insulating substrate 64 separates the micro device block formed on the first substrate from the first substrate. This can be realized by applying the technology disposed above, specifically, for example, FSA (Fluidic Self-Assembly). The above FSA is, for example, “Toyama University,“ Study on Self-Aligned Placement Technology of Small Semiconductor Blocks ”, [online], [searched on April 11, 2011], Internet <URL: http: //www3.u- toyama.ac.jp/maezawa/Research/FSA.html> ”.

  By making the radiation detector 60 light transmissive as described above, a configuration in which the radiation detector 62 (or the radiation detector 63) is arranged on the opposite side of the scintillator 71 with the radiation detector 60 in between (for example, FIG. 10 (A), (C), (D), FIG. 11 (B), (C), (D), FIG. 12 (A), (C), (D), FIG. 13 (B), (C) , (D), FIG. 14 (A), (C), (D), FIG. 15 (B), (C), (D), FIG. 16 (A), (C), (D), FIG. B), (C), and (D)) a part of the light emitted from the scintillator 71 passes through the radiation detector 60 and enters the radiation detector 62 (or radiation detector 63). Can be configured.

  Even if the radiation detector 60 does not have optical transparency (for example, when the insulating substrate 64 is a substrate including silicon that absorbs light in a wavelength region including the visible region and the infrared region), A configuration in which the detection unit 62 (or radiation detection unit 63) is arranged on the opposite side of the radiation detector 60 with the scintillator 71 interposed therebetween (for example, FIG. 10B, FIG. 11A, FIG. 12B, FIG. 13). (A), FIG. 14 (B), FIG. 15 (A), FIG. 16 (B), and FIG. 17 (A)), a part of the light emitted from the scintillator 71 is converted into the radiation detector 62 (or radiation). It can enter into the detection part 63).

  In the above description, the partial reflection layer 170 having a substantially uniform desired light reflectivity over the entire surface has been described as an example. However, the partial reflection means according to the present invention is not limited to the above-described configuration. For a total reflection film having a rate of 100% or a value close to it, or a partial reflection film having a light reflectance lower than 100%, a part of the in-plane film is removed (providing a region having a light transmittance of 100% E) A configuration may be adopted. In this case, the in-plane light reflectivity is uneven, but by adjusting the area of the region from which the film is removed, the light reflectivity (light transmittance) of the partial reflection means as a whole becomes a desired value. Can be configured.

  In addition, although the aspect which uses each sensor part 146 of the radiation detection part 62 for the detection of the irradiation timing of a radiation and the detection of a radiation dose was demonstrated above, it is not limited to this, The radiation detection part 62 The sensor unit 146 is divided into two groups, the output signal from one sensor unit group is used for detection of radiation irradiation timing, and the output signal from one sensor unit group is used for detection of radiation dose. Good. Further, characteristics (for example, response speed and sensitivity) may be made different for each sensor unit group according to the use of the output signal.

  Moreover, although the aspect which performs each of the detection of the irradiation timing of a radiation and the detection of a radiation irradiation amount by the electronic cassette 32 was demonstrated above, it is not limited to this, Detection of the irradiation timing of a radiation and detection of a radiation irradiation amount A mode in which only one of them is performed is also included in the scope of the right of the present invention.

  In particular, the configuration in which the electronic cassette 32 has a function of directly communicating with the console 42 wirelessly has been described above. However, the electronic cassette 32 only detects the radiation irradiation timing, and detects the radiation irradiation amount (radiation irradiation amount). The function of monitoring whether or not the cumulative value has reached the upper limit value and not performing the process of notifying the console 42 if the cumulative value has reached the upper limit value is omitted from the function of the electronic cassette 32 communicating directly with the console 42 by radio. If the function is omitted, the radiographic image data is transferred to the console 42 by, for example, when the electronic cassette 32 is set in the cradle, the cradle reads out the radiographic image data from the electronic cassette 32 and the console 42. This can be achieved by configuring the cradle to transmit to. Further, the transfer of the radiation image data from the electronic cassette 32 to the console 42 can be performed offline using a memory card or the like.

18 Radiation imaging system 32 Electronic cassette 42 Console 56 Irradiation surface 60 Radiation detector 62 Radiation detector 63 Radiation detector 64 Insulating substrate 68 Storage capacitor 71 Scintillator 70 TFT
72 Photoelectric conversion unit 92 Cassette control unit 120 Base 122 Vapor deposition substrate 146 Sensor unit 170 Partial reflection layer 172, 173, 174 Total reflection layer

Claims (16)

A light emitting unit that absorbs radiation transmitted through the subject and emits light;
First detection means for detecting light emitted from the light emitting unit as an image;
Formed on a flexible support and disposed on the opposite side of the first detection means with respect to the light emission part or on the opposite side of the light emission part with respect to the first detection means, and emitted from the light emission part Second detection means for detecting the emitted light by an organic photoelectric conversion material;
When the first detection means exists between the light emitting part and the second detection means and between the light emission part and the second detection means, the first detection means and the second detection means A partial reflection means that is disposed between and reflects a part of the light incident from the light emitting unit side to the light emitting unit side;
A radiation detection panel constructed by laminating along the radiation arrival direction.   The radiation detection panel according to claim 1, wherein the flexible support is a synthetic resin substrate.   The said 1st detection means is the structure which detects the light discharge | released from the said light emission part as an image with an organic photoelectric conversion material, and is formed on the same support body as the said 2nd detection means. Radiation detection panel.   The radiation according to claim 1, wherein the flexible support has heat resistance that can be used for vapor deposition, and the first detection means is formed on the same support as the second detection means. Detection panel.   The radiation detection panel according to any one of claims 1 to 4, wherein the first detection means is arranged upstream of the light emitting unit in the direction of arrival of radiation.   In the configuration in which the second detection unit is disposed only on the opposite side of the light emitting unit with the first detection unit interposed therebetween, and the first detection unit has a light transmitting property, the first detection unit with the light emitting unit interposed therebetween. The radiation detection panel according to claim 1, further comprising a total reflection unit that is disposed on the opposite side of the light source and totally reflects light incident from the light emitting unit side toward the light emitting unit side.   In the configuration in which the second detection unit is disposed only on the opposite side of the first detection unit with the light emitting unit interposed therebetween, and the first detection unit has a light transmitting property, the light emitting unit with the first detection unit interposed therebetween. The radiation detection panel according to claim 1, further comprising a total reflection unit that is disposed on the opposite side of the light source and totally reflects light incident from the light emitting unit side toward the light emitting unit side.   The total reflection means which is arrange | positioned on the opposite side of the said light emission part on both sides of the said 2nd detection means, and totally reflects the light incident from the said light emission part side to the said light emission part side is provided. The radiation detection panel according to any one of the above.   Only one light emitting unit is provided, a member existing between the single light emitting unit and the first detection unit, and a member existing between the single light emitting unit and the second detection unit are Each of the first detection means and the second detection means detects light emitted from a single light-emitting unit. The light-transmitting means transmits at least a part of the irradiated light. The radiation detection panel according to claim 1.   The first detection means is formed on a plate-like support having light transmittance, and the light emitting section is provided on one surface of the plate-like support, and the second detection means is provided on the other surface. The first reflection unit and the second detection unit are arranged so that the partial reflection unit is arranged, and the radiation is arranged so as to come from the second detection unit side. The radiation detection panel according to any one of the above.   First control means for performing first control to synchronize light detection timing by the first detection means with radiation irradiation timing to the radiation detection panel based on a light detection result by the second detection means. The radiation detection panel according to any one of claims 1 to 10. The first detection unit includes a photoelectric conversion unit that converts light emitted from the light emitting unit into an electrical signal, and a charge storage unit that accumulates the electrical signal output from the photoelectric conversion unit as charges,
In the first control means, as the first control, at least when the light emitted from the light emitting unit is detected by the second detection unit, an electric signal output from the photoelectric conversion unit before that is detected. The radiation detection panel according to claim 11, wherein control is performed to start accumulation of charges in the charge accumulation unit by the first detection unit from a state in which charge is not accumulated in the charge accumulation unit.   As the first control, when the light emitted from the light emitting unit is no longer detected by the second detection unit, the first control unit is accumulated in the charge accumulation unit of the first detection unit. The radiation detection panel according to claim 12, wherein control for starting reading of charges is also performed.   Second control means for performing second control for terminating the emission of radiation from the radiation source when the integrated dose of radiation to the radiation detection panel reaches a predetermined value based on the light detection result by the second detection means. The radiation detection panel according to any one of claims 1 to 11, further comprising:   The second control means, as the second control, calculates an integrated dose of radiation to the radiation detection panel based on a light detection result by the second detection means, and the calculation result of the integrated dose is the It is repeatedly determined whether or not a predetermined value has been reached, and when it is determined that the calculation result of the integrated dose has reached the predetermined value, the fact that the cumulative dose of radiation has reached the predetermined value is notified. The radiation detection panel according to claim 14, wherein control for outputting a signal is performed.   The second control means emits radiation from the radiation source as the signal that notifies the control device that controls the emission of radiation from the radiation source that the cumulative dose of radiation has reached the predetermined value. The radiation detection panel according to claim 15, wherein an instruction signal for instructing termination is output.