JP2012039148A5 - - Google Patents

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Publication number
JP2012039148A5
JP2012039148A5 JP2011230905A JP2011230905A JP2012039148A5 JP 2012039148 A5 JP2012039148 A5 JP 2012039148A5 JP 2011230905 A JP2011230905 A JP 2011230905A JP 2011230905 A JP2011230905 A JP 2011230905A JP 2012039148 A5 JP2012039148 A5 JP 2012039148A5
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JP
Japan
Prior art keywords
axis
nitride semiconductor
cladding layer
group iii
degrees
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JP2011230905A
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English (en)
Japanese (ja)
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JP5348217B2 (ja
JP2012039148A (ja
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Publication of JP2012039148A5 publication Critical patent/JP2012039148A5/ja
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JP2011230905A 2011-10-20 2011-10-20 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 Expired - Fee Related JP5348217B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011230905A JP5348217B2 (ja) 2011-10-20 2011-10-20 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011230905A JP5348217B2 (ja) 2011-10-20 2011-10-20 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Related Parent Applications (1)

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JP2009228894A Division JP5397136B2 (ja) 2009-09-30 2009-09-30 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Publications (3)

Publication Number Publication Date
JP2012039148A JP2012039148A (ja) 2012-02-23
JP2012039148A5 true JP2012039148A5 (cg-RX-API-DMAC7.html) 2012-11-08
JP5348217B2 JP5348217B2 (ja) 2013-11-20

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JP2011230905A Expired - Fee Related JP5348217B2 (ja) 2011-10-20 2011-10-20 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Country Status (1)

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JP (1) JP5348217B2 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105406358B (zh) * 2015-11-25 2018-11-02 武汉电信器件有限公司 一种GaN基激光器制备方法和结构

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008187044A (ja) * 2007-01-30 2008-08-14 Rohm Co Ltd 半導体レーザ

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