JP2012034350A5 - Solid-state imaging device, imaging system, and radiation imaging device - Google Patents
Solid-state imaging device, imaging system, and radiation imaging device Download PDFInfo
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- JP2012034350A5 JP2012034350A5 JP2011136973A JP2011136973A JP2012034350A5 JP 2012034350 A5 JP2012034350 A5 JP 2012034350A5 JP 2011136973 A JP2011136973 A JP 2011136973A JP 2011136973 A JP2011136973 A JP 2011136973A JP 2012034350 A5 JP2012034350 A5 JP 2012034350A5
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上記課題に鑑みて、本発明の一つの側面に係る固体撮像装置は、各々が光電変換素子を有し、等ピッチに配された複数の単位セルと、前記複数の単位セルの信号を増幅して出力する増幅回路とを備える固体撮像装置であって、前記複数の単位セルは、第１感度を有する第１光電変換素子を含み、周辺回路が配された第１単位セルと、前記第１感度よりも高い第２感度を有する第２光電変換素子を含み、前記周辺回路が配されていない第２単位セルとを含み、前記増幅回路は、前記第１光電変換素子から出力された信号を第１ゲインで増幅し、前記第２光電変換素子から出力された信号を前記第１ゲインよりも小さい第２ゲインで増幅することを特徴とする。 In view of the above problems, the solid-state imaging device according to one aspect of the present invention, each have a photoelectric conversion element, and amplifies a plurality of unit cells arranged in an equal pitch, a signal of the plurality of unit cells a solid-state imaging device comprising an amplifying circuit for outputting Te, the plurality of unit cells, see contains the first photoelectric conversion element having a first sensitivity, and the first unit cell peripheral circuit is disposed, said first look including a second photoelectric conversion element having a high second sensitivity than 1 sensitivity, and a second unit cell in which the peripheral circuit is not disposed, the amplifier circuit is output from the first photoelectric conversion element The signal is amplified with a first gain, and the signal output from the second photoelectric conversion element is amplified with a second gain smaller than the first gain.
本発明の別の側面に係る固体撮像装置は、各々が光電変換素子と前記光電変換素子の容量値を増やすように前記光電変換素子に接続された補助容量とを有する複数の単位セルと、前記複数の単位セルの信号を増幅して出力する増幅回路とを備える固体撮像装置であって、前記複数の単位セルは、第１感度を有する第１光電変換素子を含む第１単位セルと、前記第１感度よりも高い第２感度を有する第２光電変換素子を含む第２単位セルとを含み、前記第１光電変換素子に接続された補助容量の容量値は、前記第２光電変換素子に接続された補助容量の容量値よりも小さいことを特徴とする。 A solid-state imaging device according to another aspect of the present invention includes a plurality of unit cells each having a photoelectric conversion element and an auxiliary capacitor connected to the photoelectric conversion element so as to increase a capacitance value of the photoelectric conversion element, a solid-state imaging device comprising an amplifying circuit for amplifying and outputting a signal of a plurality of unit cells, the plurality of unit cells includes a first unit cell comprising a first photoelectric conversion element having a first sensitivity, wherein And a second unit cell including a second photoelectric conversion element having a second sensitivity higher than the first sensitivity, and a capacitance value of an auxiliary capacitor connected to the first photoelectric conversion element is in the second photoelectric conversion element It is smaller than the capacity value of the connected auxiliary capacity.
本発明は固体撮像装置、撮像システム及び放射線撮像装置に関する。 The present invention relates to a solid-state imaging device , an imaging system, and a radiation imaging device .
Claims (12)
前記複数の単位セルは、第１感度を有する第１光電変換素子を含み、周辺回路が配された第１単位セルと、前記第１感度よりも高い第２感度を有する第２光電変換素子を含み、前記周辺回路が配されていない第２単位セルとを含み、
前記増幅回路は、前記第１光電変換素子から出力された信号を第１ゲインで増幅し、前記第２光電変換素子から出力された信号を前記第１ゲインよりも小さい第２ゲインで増幅する
ことを特徴とする固体撮像装置。 Each have a photoelectric conversion element, a solid-state imaging device comprising a plurality of unit cells arranged in an equal pitch, and an amplifying circuit for amplifying and outputting a signal of said plurality of unit cells,
Wherein the plurality of unit cells, see contains the first photoelectric conversion element having a first sensitivity, and the first unit cell peripheral circuit is disposed, the second photoelectric conversion element having a high second sensitivity than the first sensitivity only it contains, and a second unit cell in which the peripheral circuit is not disposed,
The amplifying circuit amplifies a signal output from the first photoelectric conversion element with a first gain, and amplifies a signal output from the second photoelectric conversion element with a second gain smaller than the first gain. A solid-state imaging device.
前記複数の単位セルは、第１感度を有する第１光電変換素子を含む第１単位セルと、前記第１感度よりも高い第２感度を有する第２光電変換素子を含む第２単位セルとを含み、
前記第１光電変換素子に接続された補助容量の容量値は、前記第２光電変換素子に接続された補助容量の容量値よりも小さい
ことを特徴とする固体撮像装置。 A plurality of unit cells each having a photoelectric conversion element and an auxiliary capacitor connected to the photoelectric conversion element so as to increase a capacitance value of the photoelectric conversion element, and amplification for amplifying and outputting signals of the plurality of unit cells A solid-state imaging device comprising a circuit,
The plurality of unit cells include a first unit cell including a first photoelectric conversion element having a first sensitivity, and a second unit cell including a second photoelectric conversion element having a second sensitivity higher than the first sensitivity. Including
A solid-state imaging device, wherein a capacitance value of an auxiliary capacitor connected to the first photoelectric conversion element is smaller than a capacitance value of an auxiliary capacitance connected to the second photoelectric conversion element.
前記走査回路は前記第１単位セルに配されており、前記第２単位セルに配されていない
ことを特徴とする請求項１乃至３の何れか１項に記載の固体撮像装置。 The solid-state imaging device further includes a scanning circuit for scanning signals output from the plurality of unit cells ,
The solid-state imaging device according to any one of claims 1 to 3 , wherein the scanning circuit is disposed in the first unit cell and is not disposed in the second unit cell. .
前記第２光電変換素子の前記第２半導体領域は、前記第１光電変換素子の前記第２半導体領域よりも前記半導体基板の表面から深い位置まで配されている The second semiconductor region of the second photoelectric conversion element is arranged from the surface of the semiconductor substrate to a deeper position than the second semiconductor region of the first photoelectric conversion element.
ことを特徴とする請求項１乃至４の何れか１項に記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the solid-state imaging device is provided.
前記第２光電変換素子の前記第１半導体領域は、前記第１光電変換素子の前記第１半導体領域よりも前記半導体基板の表面から深い位置まで配されている The first semiconductor region of the second photoelectric conversion element is arranged from the surface of the semiconductor substrate to a deeper position than the first semiconductor region of the first photoelectric conversion element.
ことを特徴とする請求項１乃至４の何れか１項に記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the solid-state imaging device is provided.
前記増幅回路は前記処理回路部に含まれることを特徴とする請求項１乃至７の何れか１項に記載の固体撮像装置。 The solid-state imaging device according to claim 1, wherein the amplifier circuit is included in the processing circuit unit.
前記処理回路部からの信号を出力する出力部とを更に備え、 An output unit that outputs a signal from the processing circuit unit;
前記増幅回路は前記出力部に含まれることを特徴とする請求項１乃至７の何れか１項に記載の固体撮像装置。 The solid-state imaging device according to claim 1, wherein the amplifier circuit is included in the output unit.
前記固体撮像装置から出力される信号を処理するプロセッサと
を備えることを特徴とする撮像システム。 A solid-state imaging device according to any one of claims 1 to 10 ,
An imaging system comprising: a processor that processes a signal output from the solid-state imaging device.
放射線を可視光に変換するシンチレータと A scintillator that converts radiation into visible light;
を備えることを特徴とする放射線撮像装置。A radiation imaging apparatus comprising:
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011136973A JP2012034350A (en) | 2010-07-07 | 2011-06-21 | Solid-state imaging device and imaging system |
| US13/174,822 US20120008030A1 (en) | 2010-07-07 | 2011-07-01 | Solid-state imaging apparatus and imaging system |
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| JP2010155262 | 2010-07-07 | ||
| JP2010155262 | 2010-07-07 | ||
| JP2011136973A JP2012034350A (en) | 2010-07-07 | 2011-06-21 | Solid-state imaging device and imaging system |
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| JP2012034350A JP2012034350A (en) | 2012-02-16 |
| JP2012034350A5 true JP2012034350A5 (en) | 2014-08-07 |
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| JP5885401B2 (en) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | Solid-state imaging device and imaging system |
| JP5751766B2 (en) | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | Solid-state imaging device and imaging system |
| JP5737971B2 (en) | 2011-01-28 | 2015-06-17 | キヤノン株式会社 | Solid-state imaging device and camera |
| JP5744545B2 (en) | 2011-01-31 | 2015-07-08 | キヤノン株式会社 | Solid-state imaging device and camera |
| JP2012182377A (en) * | 2011-03-02 | 2012-09-20 | Sony Corp | Solid-state imaging device |
| JP6083611B2 (en) * | 2011-08-30 | 2017-02-22 | パナソニックＩｐマネジメント株式会社 | Solid-state imaging device and imaging device |
| JP5864990B2 (en) | 2011-10-03 | 2016-02-17 | キヤノン株式会社 | Solid-state imaging device and camera |
| JP5967912B2 (en) | 2011-12-02 | 2016-08-10 | キヤノン株式会社 | Solid-state imaging device |
| JP6023437B2 (en) | 2012-02-29 | 2016-11-09 | キヤノン株式会社 | Solid-state imaging device and camera |
| JP5956840B2 (en) | 2012-06-20 | 2016-07-27 | キヤノン株式会社 | Solid-state imaging device and camera |
| JP2014120858A (en) | 2012-12-14 | 2014-06-30 | Canon Inc | Solid-state imaging device |
| JP6230260B2 (en) * | 2013-04-24 | 2017-11-15 | キヤノン株式会社 | Imaging device, imaging system, and driving method of imaging device |
| JP6274788B2 (en) | 2013-08-28 | 2018-02-07 | キヤノン株式会社 | Imaging apparatus, imaging system, and driving method of imaging apparatus |
| JP6230343B2 (en) | 2013-09-06 | 2017-11-15 | キヤノン株式会社 | Solid-state imaging device, driving method thereof, and imaging system |
| JP6385192B2 (en) | 2014-08-14 | 2018-09-05 | キヤノン株式会社 | Imaging apparatus, imaging system, and driving method of imaging system |
| JP6514076B2 (en) * | 2015-09-11 | 2019-05-15 | 株式会社東芝 | Solid-state imaging device |
| CN108780803B (en) * | 2016-03-29 | 2023-03-17 | 索尼公司 | Solid-state imaging device and electronic apparatus |
| JP7005125B2 (en) | 2016-04-22 | 2022-01-21 | キヤノン株式会社 | Image sensor, image sensor, and method for manufacturing the image sensor |
| JP6552478B2 (en) | 2016-12-28 | 2019-07-31 | キヤノン株式会社 | Solid-state imaging device |
| US10652531B2 (en) | 2017-01-25 | 2020-05-12 | Canon Kabushiki Kaisha | Solid-state imaging device, imaging system, and movable object |
| JP6904772B2 (en) | 2017-04-26 | 2021-07-21 | キヤノン株式会社 | Solid-state image sensor and its driving method |
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| KR20220105292A (en) * | 2021-01-20 | 2022-07-27 | 에스케이하이닉스 주식회사 | Image sensing device and method of operating the same |
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| JP3011208B1 (en) * | 1998-11-09 | 2000-02-21 | 日本電気株式会社 | Image sensor and method of manufacturing the same |
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| US6924841B2 (en) * | 2001-05-02 | 2005-08-02 | Agilent Technologies, Inc. | System and method for capturing color images that extends the dynamic range of an image sensor using first and second groups of pixels |
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| JP4311181B2 (en) * | 2003-12-05 | 2009-08-12 | ソニー株式会社 | Semiconductor device control method, signal processing method, semiconductor device, and electronic apparatus |
| JP2006238410A (en) * | 2005-01-31 | 2006-09-07 | Fuji Photo Film Co Ltd | Imaging apparatus |
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