JP2012019249A5

JP2012019249A5 -

Info

Publication number: JP2012019249A5
Application number: JP2011235360A
Authority: JP
Filing date: 2011-10-26
Publication date: 2012-08-02
Anticipated expiration: 2029-06-17

Claims

A group III nitride semiconductor laser device comprising:
A support structure made of a hexagonal group III nitride semiconductor and having a semipolar main surface; and a laser structure including a semiconductor region provided on the semipolar main surface of the support base;
An electrode provided on the semiconductor region of the laser structure,
The semiconductor region includes a first cladding layer made of a gallium nitride semiconductor of a first conductivity type, a second cladding layer made of a gallium nitride semiconductor of a second conductivity type, the first cladding layer, and the first cladding layer. An active layer provided between the two clad layers,
The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis of the semipolar principal surface,
The active layer includes a gallium nitride based semiconductor layer,
Wherein the hexagonal Group III c-axis of the nitride semiconductor of the support base is inclined at a finite angle ALPHA with respect to the normal axis in the direction of the hexagonal Group III nitride semiconductor of the m-axis, the The angle ALPHA is in the range of 45 degrees to 80 degrees or 100 degrees to 135 degrees,
The laser structure includes first and second fractured surfaces intersecting an mn plane defined by the m-axis and the normal axis of the hexagonal group III nitride semiconductor,
The laser resonator of the group III nitride semiconductor laser device includes the first and second split sections,
The laser structure includes first and second surfaces, wherein the first surface is a surface opposite the second surface;
The group III nitride semiconductor laser device, wherein each of the first and second fractured sections extends from an edge of the first surface to an edge of the second surface.

2. The group III nitride according to claim 1, wherein the first and second fractured faces are different from a cleavage plane such as a c-plane, m-plane, or a-plane of a hexagonal group III nitride semiconductor. Semiconductor laser device.

The angle formed by the normal axis and the c-axis of the hexagonal group III nitride semiconductor is in a range of 63 degrees to 80 degrees or 100 degrees to 117 degrees. Item III nitride semiconductor laser device according to Item 2.

4. The group III nitride semiconductor laser device according to claim 1, wherein a thickness of the support base is 400 μm or less. 5.

The group III nitride semiconductor laser device according to any one of claims 1 to 4, wherein a thickness of the support base is 50 µm or more and 100 µm or less.

The laser light from the active layer is polarized in the direction of the a-axis of the hexagonal group III nitride semiconductor, according to any one of claims 1 to 5. Group III nitride semiconductor laser device.

The light in the LED mode of the group III nitride semiconductor laser element has a polarization component I1 in the direction of the a-axis of the hexagonal group III nitride semiconductor and the c-axis of the hexagonal group III nitride semiconductor as principal surfaces. Including the polarization component I2 in the direction projected onto
7. The group III nitride semiconductor laser device according to claim 1, wherein the polarization component I1 is larger than the polarization component I2.

The semipolar principal surface is -4 degrees or more +4 from any one of {20-21} plane, {10-11} plane, {20-2-1} plane, and {10-1-1} plane. 8. The group III nitride semiconductor laser device according to claim 1, wherein the III-nitride semiconductor laser device is a slightly inclined surface that is turned off within a range of less than or equal to a degree.

The semipolar principal surface is any one of {20-21} plane, {10-11} plane, {20-2-1} plane, and {10-1-1} plane. The group III nitride semiconductor laser device according to any one of claims 1 to 8.

10. The group III nitride semiconductor laser device according to claim 1, wherein a stacking fault density of the support base is 1 × 10 ⁴ cm ⁻¹ or less.

11. The group III nitride semiconductor laser device according to claim 1, wherein the support base is made of any one of GaN, AlGaN, AlN, InGaN, and InAlGaN.

The group III nitride according to any one of claims 1 to 11, further comprising a dielectric multilayer film provided on at least one of the first and second fractured faces. Semiconductor laser device.

The group III nitride according to any one of claims 1 to 12, wherein the active layer includes a light emitting region provided to generate light having a wavelength of 360 nm to 600 nm. Semiconductor laser element.

The group III nitride according to any one of claims 1 to 13, wherein the active layer includes a quantum well structure provided to generate light having a wavelength of 430 nm to 550 nm. Semiconductor laser device.

In each of the first and second fractured faces, an end face of the support base and an end face of the semiconductor region appear,
The angle formed between the end face of the active layer of the semiconductor region and the reference plane orthogonal to the m-axis of the support base made of the hexagonal group III nitride semiconductor is determined by the c-axis and m-axis of the group III nitride semiconductor. The group III nitriding according to any one of claims 1 to 14, wherein an angle in a range of (ALPHA-5) degrees or more and (ALPHA + 5) degrees or less is formed in a first plane defined. Semiconductor laser device.

16. The group III nitride semiconductor laser device according to claim 15, wherein the angle is in a range of not less than −5 degrees and not more than +5 degrees in the first plane and a second plane orthogonal to the normal axis. .

The first and second fractured faces have L of 6, 7, 8 and are -5 degrees from the plane indicated by (-1, 0, 1, L) or (1, 0, -1, -L). The group III nitride semiconductor laser device according to any one of claims 1 to 16, further comprising a region within a range of ~ 5 degrees.

A method for producing a group III nitride semiconductor laser device, comprising:
Preparing a substrate composed of a hexagonal group III nitride semiconductor and having a semipolar main surface;
Forming a substrate structure having a laser structure including a semiconductor region formed on the semipolar main surface and the substrate, an anode electrode, and a cathode electrode;
Partially scribing the first surface of the substrate product in the direction of the a-axis of the hexagonal III-nitride semiconductor;
Separating the substrate product by pressing on the second surface of the substrate product to form another substrate product and a laser bar,
The first surface is a surface opposite to the second surface;
The semiconductor region is located between the first surface and the substrate;
The laser bar has first and second end surfaces extending from the first surface to the second surface and formed by the separation,
The first and second end faces constitute a laser resonator of the group III nitride semiconductor laser element,
The anode electrode and the cathode electrode are formed on the laser structure;
The semiconductor region includes a first cladding layer made of a gallium nitride semiconductor of a first conductivity type, a second cladding layer made of a gallium nitride semiconductor of a second conductivity type, the first cladding layer, and the first cladding layer. An active layer provided between the two clad layers,
The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis of the semipolar principal surface,
The active layer includes a gallium nitride based semiconductor layer,
The hexagonal Group III c-axis of the nitride semiconductor of the substrate is inclined at a finite angle ALPHA with respect to the normal axis in the direction of the hexagonal Group III nitride semiconductor of the m-axis, the angle ALPHA is in the range of 45 degrees to 80 degrees or 100 degrees to 135 degrees,
The group III nitride semiconductor laser device characterized in that the first and second end faces intersect an mn plane defined by an m axis and a normal axis of the hexagonal group III nitride semiconductor. How to make .

19. The group III nitride according to claim 18 , wherein the first and second end faces are different from a cleavage plane such as a c-plane, m-plane, or a-plane of a hexagonal group III nitride semiconductor . A method of manufacturing a semiconductor laser device .

20. The method for manufacturing a group III nitride semiconductor laser device according to claim 18 , wherein the angle ALPHA is in a range of not less than 63 degrees and not more than 80 degrees or in a range of not less than 100 degrees and not more than 117 degrees. .

In the step of forming the substrate product, the substrate is subjected to processing such as slicing or grinding so that the thickness of the substrate is 400 μm or less,
The said 2nd surface is a surface containing the electrode formed in the processed surface formed by the said process, or the said processed surface on any one of Claims 18-20 characterized by the above-mentioned. A method for producing the group III nitride semiconductor laser device described.

In the step of forming the substrate product, the substrate is polished so that the thickness of the substrate is 50 μm or more and 100 μm or less,
The second surface is a polished surface formed by the polishing, or the a surface including an electrode formed on the polishing surface, it in any one of claims 18 to claim 21, characterized in A method for producing the group III nitride semiconductor laser device described.

The scribe is performed using a laser scriber,
A scribe groove is formed by the scribe, and the length of the scribe groove is an intersection of the a-n plane defined by the a-axis and the normal axis of the hexagonal group III nitride semiconductor and the first surface. The method for producing a group III nitride semiconductor laser device according to any one of claims 18 to 22 , wherein the group length is shorter than a length of the line.

The semipolar principal surface is any one of {20-21} plane, {10-11} plane, {20-2-1} plane, and {10-1-1} plane. A method for producing a group III nitride semiconductor laser device according to any one of claims 18 to 23 .

The end face of the active layer in each of the first and second end faces is the hexagonal group III nitride with respect to a reference plane perpendicular to the m-axis of the support base made of the hexagonal group III nitride semiconductor. in the plane defined by the c-axis and m-axis of sEMICONDUCTOR (ALPHA-5) degrees or more (ALPHA + 5) ° makes an angle of the range, any one of claims 18 to claim 24, characterized in that A method for producing a group III nitride semiconductor laser device described in 1).

The first and second end faces have L of 6, 7, 8 and are -5 degrees from the plane indicated by (-1, 0, 1, L) or (1, 0, -1, -L). The method for producing a group III nitride semiconductor laser device according to any one of claims 18 to 25, including a region within a range of +5 degrees.

The group III nitride semiconductor laser device according to any one of claims 18 to 26 , wherein the substrate is made of any one of GaN, AlGaN, AlN, InGaN, and InAlGaN. Method.