JP2012009702A5 - - Google Patents

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Publication number
JP2012009702A5
JP2012009702A5 JP2010145457A JP2010145457A JP2012009702A5 JP 2012009702 A5 JP2012009702 A5 JP 2012009702A5 JP 2010145457 A JP2010145457 A JP 2010145457A JP 2010145457 A JP2010145457 A JP 2010145457A JP 2012009702 A5 JP2012009702 A5 JP 2012009702A5
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JP
Japan
Prior art keywords
heating element
heating
distance
wall
increases
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JP2010145457A
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English (en)
Japanese (ja)
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JP5529646B2 (ja
JP2012009702A (ja
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Priority claimed from JP2010145457A external-priority patent/JP5529646B2/ja
Priority to JP2010145457A priority Critical patent/JP5529646B2/ja
Priority to KR1020100069368A priority patent/KR101096602B1/ko
Priority to US12/838,831 priority patent/US9064912B2/en
Priority to TW099123773A priority patent/TWI423339B/zh
Priority to CN2010102361453A priority patent/CN101964303B/zh
Priority to CN201210129802.3A priority patent/CN102709213B/zh
Publication of JP2012009702A publication Critical patent/JP2012009702A/ja
Publication of JP2012009702A5 publication Critical patent/JP2012009702A5/ja
Publication of JP5529646B2 publication Critical patent/JP5529646B2/ja
Application granted granted Critical
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JP2010145457A 2009-07-21 2010-06-25 加熱装置、基板処理装置、基板処理方法及び半導体装置の製造方法 Active JP5529646B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010145457A JP5529646B2 (ja) 2010-06-25 2010-06-25 加熱装置、基板処理装置、基板処理方法及び半導体装置の製造方法
KR1020100069368A KR101096602B1 (ko) 2009-07-21 2010-07-19 가열 장치, 기판 처리 장치 및 반도체 장치의 제조 방법
US12/838,831 US9064912B2 (en) 2009-07-21 2010-07-19 Heating device, substrate processing apparatus, and method of manufacturing semiconductor device
TW099123773A TWI423339B (zh) 2009-07-21 2010-07-20 加熱裝置、基板處理裝置及半導體裝置之製造方法
CN2010102361453A CN101964303B (zh) 2009-07-21 2010-07-21 加热装置、衬底处理装置以及半导体装置的制造方法
CN201210129802.3A CN102709213B (zh) 2009-07-21 2010-07-21 加热装置、衬底处理装置以及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010145457A JP5529646B2 (ja) 2010-06-25 2010-06-25 加熱装置、基板処理装置、基板処理方法及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2012009702A JP2012009702A (ja) 2012-01-12
JP2012009702A5 true JP2012009702A5 (ru) 2013-08-08
JP5529646B2 JP5529646B2 (ja) 2014-06-25

Family

ID=45539897

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JP2010145457A Active JP5529646B2 (ja) 2009-07-21 2010-06-25 加熱装置、基板処理装置、基板処理方法及び半導体装置の製造方法

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JP (1) JP5529646B2 (ru)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9064912B2 (en) 2009-07-21 2015-06-23 Hitachi Kokusai Electric, Inc. Heating device, substrate processing apparatus, and method of manufacturing semiconductor device
JP5544121B2 (ja) 2009-07-21 2014-07-09 株式会社日立国際電気 加熱装置、基板処理装置、及び半導体装置の製造方法
JP5824082B2 (ja) * 2014-02-05 2015-11-25 株式会社日立国際電気 加熱装置、基板処理装置、及び半導体装置の製造方法
CN110087354B (zh) * 2018-01-26 2022-05-03 鸿成国际科技股份有限公司 一种加热器支撑装置
JP7122856B2 (ja) * 2018-05-02 2022-08-22 東京エレクトロン株式会社 熱処理装置
JP7091222B2 (ja) * 2018-10-23 2022-06-27 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07135179A (ja) * 1993-11-10 1995-05-23 Tokyo Electron Ltd 熱処理炉製造方法および熱処理炉
JP4350322B2 (ja) * 2001-04-27 2009-10-21 株式会社日立国際電気 加熱処理装置
JP4820137B2 (ja) * 2005-09-26 2011-11-24 株式会社日立国際電気 発熱体の保持構造体
JP5248874B2 (ja) * 2007-03-20 2013-07-31 東京エレクトロン株式会社 熱処理炉及び縦型熱処理装置

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