JP2012004108A5 - - Google Patents

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Publication number
JP2012004108A5
JP2012004108A5 JP2011106983A JP2011106983A JP2012004108A5 JP 2012004108 A5 JP2012004108 A5 JP 2012004108A5 JP 2011106983 A JP2011106983 A JP 2011106983A JP 2011106983 A JP2011106983 A JP 2011106983A JP 2012004108 A5 JP2012004108 A5 JP 2012004108A5
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JP
Japan
Prior art keywords
upper electrode
processing apparatus
plasma processing
space
inert gas
Prior art date
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Granted
Application number
JP2011106983A
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English (en)
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JP2012004108A (ja
JP5749071B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2011106983A priority Critical patent/JP5749071B2/ja
Priority claimed from JP2011106983A external-priority patent/JP5749071B2/ja
Publication of JP2012004108A publication Critical patent/JP2012004108A/ja
Publication of JP2012004108A5 publication Critical patent/JP2012004108A5/ja
Application granted granted Critical
Publication of JP5749071B2 publication Critical patent/JP5749071B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (3)

  1. 上部電極と下部電極とが対向してチャンバー内に備えられたプラズマ処理装置であって、
    前記上部電極と、前記上部電極を覆うチャンバー壁との間の空間は、陽圧の不活性ガス雰囲気であり、
    前記上部電極と、前記上部電極を覆う前記チャンバー壁とは、同軸形状であることを特徴とするプラズマ処理装置。
  2. 請求項１において、
    前記上部電極は、整合器と電気的に接続されており、
    前記整合器は、前記空間に設けられていることを特徴とするプラズマ処理装置。
  3. 請求項１または請求項２において、
    前記上部電極はヒーターを有し、
    前記空間は、冷却された不活性ガス雰囲気であることを特徴とするプラズマ処理装置。
JP2011106983A 2010-05-18 2011-05-12 プラズマ処理装置 Expired - Fee Related JP5749071B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011106983A JP5749071B2 (ja) 2010-05-18 2011-05-12 プラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010114377 2010-05-18
JP2010114377 2010-05-18
JP2011106983A JP5749071B2 (ja) 2010-05-18 2011-05-12 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2012004108A JP2012004108A (ja) 2012-01-05
JP2012004108A5 true JP2012004108A5 (ja) 2014-06-19
JP5749071B2 JP5749071B2 (ja) 2015-07-15

Family

ID=45535848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011106983A Expired - Fee Related JP5749071B2 (ja) 2010-05-18 2011-05-12 プラズマ処理装置

Country Status (1)

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JP (1) JP5749071B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120043636A (ko) * 2010-10-26 2012-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 플라즈마 처리 장치 및 플라즈마 ｃｖｄ 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60114577A (ja) * 1983-11-26 1985-06-21 Matsushita Electric Ind Co Ltd 化学処理装置
JP4499005B2 (ja) * 2004-09-29 2010-07-07 積水化学工業株式会社 プラズマ処理装置
JP5122805B2 (ja) * 2006-12-20 2013-01-16 株式会社アルバック 成膜装置
JP2008186939A (ja) * 2007-01-29 2008-08-14 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びに記憶媒体
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
JP5328685B2 (ja) * 2010-01-28 2013-10-30 三菱電機株式会社 プラズマ処理装置及びプラズマ処理方法

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