JP2011527503A - 腐食耐性材料を含む極紫外線放射生成装置 - Google Patents
腐食耐性材料を含む極紫外線放射生成装置 Download PDFInfo
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 229910052718 tin Inorganic materials 0.000 claims description 50
- 239000011343 solid material Substances 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 229910003480 inorganic solid Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 12
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- 238000004891 communication Methods 0.000 claims description 4
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- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052713 technetium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
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- 238000012545 processing Methods 0.000 description 2
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- 229910052789 astatine Inorganic materials 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
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- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/20—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
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- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lubricants (AREA)
Abstract
Description
−供給手段の被膜により、スズの汚染が大いに低減され得、これにより、極紫外線装置の寿命及び品質の両方を増加させる。
−供給手段の被膜により、スズの汚染が大いに低減され得、これにより、極紫外線放射自体の純度(「放射」の「清浄度」)を増加させる。
−供給手段の被膜により、スズの汚染が大いに低減され得、これにより、より長い時間にわたり液体スズ自体の高品質及び純度を維持させ、そして、スズ自体の定期的な交換を避けることが可能で有り得る。
−供給手段の被膜により、ベースとなる材料が極紫外線装置において使用される前に適用され及び被膜されて、形成が準備され得るので、供給手段の加工自体がより安価になり、且つ、取り扱いも容易になる(例えば、機械工に対して)。
−供給手段の被膜により、供給手段自体が、絶縁性であり、したがって、電気的及び熱的な流入から保護される。
ことを示している。
−供給手段の被膜により、スズの汚染が大いに低減され得、これにより、極紫外線装置の寿命及び品質の両方を増加させる。
−供給手段の被膜により、スズの汚染が大いに低減され得、これにより、極紫外線放射自体の純度(放射の「清浄度」)を増加させる。
−供給手段の被膜により、スズの汚染が大いに低減され得、これにより、より長い時間にわたり液体スズ自体の高品質及び純度を維持させ、そして、スズ自体の定期的な交換を避けることが可能で有り得る。
−供給手段の被膜により、ベースとなる材料が極紫外線装置において使用される前に適用され及び被膜されて、形成が準備され得るので、供給手段の加工自体がより安価になり、且つ、取り扱いも容易になる(例えば、機械工に対して)。
−供給手段の被膜により、供給手段自体が、絶縁性であり、したがって、電気的及び熱的な流入から保護される。
−供給手段の金属被膜により、これらの装置は、電気的及び熱的に伝導性であり、このことは、本発明の1つ又は他の実施例における有利な点で有り得る。
ことを示している。
−半導体リソグラフィ、
−計測、
−顕微鏡
−核分裂、
−融合、
−半田付け、
のうちの1つ又は複数において使用され得る。
上述の実施例における要素及び構成の特定の組合せは、単に例示的であって、本文書及び参照として組み込まれる特許/出願書類における他の教示とこれらの教示との交換及び置換も、明示的に検討される。当業者が認識し得るように、本文書に記載の変形態様、修正態様及び他の実施態様は、請求項に記載される本発明の精神及び範囲から逸脱することなく当業者にとって想到し得る。したがって、以下の説明は、例示のみであり、制限するようには意図されない。本発明の範囲は、以下の請求項及びその等価物に規定される。更に、詳細な説明及び請求項に使用される参照符号は、請求項に記載の本発明の範囲を制限しない。
Claims (9)
- プラズマ生成装置、及び、前記プラズマ生成装置に液体スズを供給するように適合される前記プラズマ生成装置と液体連通をしている供給貯蔵部を有する少なくとも1つのスズ供給システム、を含む極紫外線放射生成装置であって、前記スズ供給システムは、スズの供給に関して少なくとも1つの供給手段を含み、前記供給手段は、少なくとも1つの共有結合性無機固体材料で少なくとも部分的に被膜されている、極紫外線放射生成装置。
- 請求項1に記載の極紫外線放射生成装置であって、前記少なくとも1つの共有結合性無機固体材料は、酸化物、窒化物、ホウ化物、リン化物、炭化物、硫化物、ケイ酸化物、及び/又は、これらの混合物、の群から選択される固体材料を含む、極紫外線放射生成装置。
- 請求項1又は2に記載の極紫外線放射生成装置であって、前記共有結合性無機固体材料は、1000℃以上の融点を有する少なくとも1つの材料を含む、極紫外線放射生成装置。
- 請求項1乃至3のいずれか一項に記載の極紫外線放射生成装置であって、前記共有結合性無機固体材料は、2g/cm3以上及び8g/cm3以下の密度を有する少なくとも1つの材料を含む、共有結合性無機固体材料。
- 請求項1乃至4のいずれか一項に記載極紫外線放射生成装置であって、前記共有結合性無機固体材料は、Mg、Al、Si、K、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd、In、Sn、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Hf、Ta、W、Re、Os、Ir、Pt、Au又はこれらの混合物の、酸化物、窒化物、ホウ化物、リン化物、炭化物、硫化物、ケイ酸化物、を含む群から選択される少なくとも1つの固体材料を含む、極紫外線放射生成装置。
- プラズマ生成装置、及び、前記プラズマ生成装置に液体スズを供給するように適合される前記プラズマ生成装置と液体連通をしている供給貯蔵部を有する少なくとも1つのスズ供給システム、を含む極紫外線放射生成装置であって、前記スズ供給システムは、スズの供給に関して少なくとも1つの供給手段を含み、前記供給手段は、IVb、Vb、VIb,及び/又はVIIIb金属又はこれらの混合物を含む群から選択される少なくとも1つの金属で少なくとも部分的に被膜されている、極紫外線放射生成装置。
- 請求項1乃至6のいずれか一項に記載極紫外線放射生成装置であって、前記金属被膜の厚さは、100nm以上及び100μm以下である、極紫外線放射生成装置。
- 請求項1乃至7のいずれか一項に記載極紫外線放射生成装置であって、前記金属被膜の厚さは、1nm以上及び1μm以下である、極紫外線放射生成装置。
- 請求項1乃至8のいずれか一項に記載の極紫外線放射生成装置を含むシステムであって、以下の応用例:
−半導体リソグラフィ、
−計測、
−顕微鏡
−核分裂、
−融合、
−半田付け、
のうちの1つ又は複数において使用される、システム。
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EP08104652.6 | 2008-07-07 | ||
EP08104652 | 2008-07-07 | ||
PCT/IB2009/052853 WO2010004481A1 (en) | 2008-07-07 | 2009-07-01 | Extreme uv radiation generating device comprising a corrosion-resistant material |
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JP2011527503A true JP2011527503A (ja) | 2011-10-27 |
JP2011527503A5 JP2011527503A5 (ja) | 2012-08-16 |
JP5735419B2 JP5735419B2 (ja) | 2015-06-17 |
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US (1) | US8519367B2 (ja) |
EP (1) | EP2298041B1 (ja) |
JP (1) | JP5735419B2 (ja) |
KR (1) | KR101549412B1 (ja) |
CN (1) | CN102106190B (ja) |
WO (1) | WO2010004481A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010199560A (ja) * | 2009-01-29 | 2010-09-09 | Komatsu Ltd | 極端紫外光源装置 |
JP2019523438A (ja) * | 2016-07-25 | 2019-08-22 | エーエスエムエル ネザーランズ ビー.ブイ. | デブリ低減システム、放射源及びリソグラフィ装置 |
NL2032512A (en) | 2021-07-19 | 2023-01-23 | Ushio Electric Inc | Circulation mechanism and operation apparatus |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5511705B2 (ja) * | 2011-02-10 | 2014-06-04 | ギガフォトン株式会社 | ターゲット供給装置及び極端紫外光生成装置 |
DE102013103668B4 (de) | 2013-04-11 | 2016-02-25 | Ushio Denki Kabushiki Kaisha | Anordnung zum Handhaben eines flüssigen Metalls zur Kühlung von umlaufenden Komponenten einer Strahlungsquelle auf Basis eines strahlungsemittierenden Plasmas |
CN109103060B (zh) * | 2018-07-23 | 2020-01-24 | 健康力(北京)医疗科技有限公司 | 一种ct球管及其制备方法 |
JP7327357B2 (ja) * | 2020-11-11 | 2023-08-16 | ウシオ電機株式会社 | ホイルトラップカバー装置およびデブリ低減装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005522839A (ja) * | 2002-04-10 | 2005-07-28 | サイマー インコーポレイテッド | 極紫外線光源 |
WO2006093687A1 (en) * | 2005-02-25 | 2006-09-08 | Cymer, Inc. | Method and apparatus for euv light source target material handling |
WO2007051537A2 (en) * | 2005-11-02 | 2007-05-10 | University College Dublin, National University Of Ireland, Dublin | High power euv lamp system |
JP2007201438A (ja) * | 2005-12-29 | 2007-08-09 | Asml Netherlands Bv | 放射ソース |
JP2007273454A (ja) * | 2006-03-31 | 2007-10-18 | Xtreme Technologies Gmbh | 電気的に作動するガス放電による極紫外線発生装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7378673B2 (en) | 2005-02-25 | 2008-05-27 | Cymer, Inc. | Source material dispenser for EUV light source |
US7405416B2 (en) | 2005-02-25 | 2008-07-29 | Cymer, Inc. | Method and apparatus for EUV plasma source target delivery |
DE10219173A1 (de) * | 2002-04-30 | 2003-11-20 | Philips Intellectual Property | Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung |
DE10342239B4 (de) | 2003-09-11 | 2018-06-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung |
US7567379B2 (en) | 2004-04-29 | 2009-07-28 | Intel Corporation | Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system |
US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
JP4710463B2 (ja) | 2005-07-21 | 2011-06-29 | ウシオ電機株式会社 | 極端紫外光発生装置 |
US7872245B2 (en) * | 2008-03-17 | 2011-01-18 | Cymer, Inc. | Systems and methods for target material delivery in a laser produced plasma EUV light source |
JP5455661B2 (ja) * | 2009-01-29 | 2014-03-26 | ギガフォトン株式会社 | 極端紫外光源装置 |
-
2009
- 2009-07-01 WO PCT/IB2009/052853 patent/WO2010004481A1/en active Application Filing
- 2009-07-01 EP EP09786492.0A patent/EP2298041B1/en active Active
- 2009-07-01 CN CN200980126231.4A patent/CN102106190B/zh active Active
- 2009-07-01 JP JP2011517283A patent/JP5735419B2/ja active Active
- 2009-07-01 KR KR1020117002767A patent/KR101549412B1/ko active IP Right Grant
- 2009-07-01 US US13/000,733 patent/US8519367B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005522839A (ja) * | 2002-04-10 | 2005-07-28 | サイマー インコーポレイテッド | 極紫外線光源 |
WO2006093687A1 (en) * | 2005-02-25 | 2006-09-08 | Cymer, Inc. | Method and apparatus for euv light source target material handling |
WO2007051537A2 (en) * | 2005-11-02 | 2007-05-10 | University College Dublin, National University Of Ireland, Dublin | High power euv lamp system |
JP2007201438A (ja) * | 2005-12-29 | 2007-08-09 | Asml Netherlands Bv | 放射ソース |
JP2007273454A (ja) * | 2006-03-31 | 2007-10-18 | Xtreme Technologies Gmbh | 電気的に作動するガス放電による極紫外線発生装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010199560A (ja) * | 2009-01-29 | 2010-09-09 | Komatsu Ltd | 極端紫外光源装置 |
US8610095B2 (en) | 2009-01-29 | 2013-12-17 | Gigaphoton Inc. | Extreme ultraviolet light source device |
JP2019523438A (ja) * | 2016-07-25 | 2019-08-22 | エーエスエムエル ネザーランズ ビー.ブイ. | デブリ低減システム、放射源及びリソグラフィ装置 |
NL2032512A (en) | 2021-07-19 | 2023-01-23 | Ushio Electric Inc | Circulation mechanism and operation apparatus |
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EP2298041B1 (en) | 2015-09-09 |
US8519367B2 (en) | 2013-08-27 |
EP2298041A1 (en) | 2011-03-23 |
JP5735419B2 (ja) | 2015-06-17 |
KR20110050635A (ko) | 2011-05-16 |
US20110101251A1 (en) | 2011-05-05 |
CN102106190B (zh) | 2017-07-28 |
KR101549412B1 (ko) | 2015-09-02 |
WO2010004481A1 (en) | 2010-01-14 |
CN102106190A (zh) | 2011-06-22 |
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