JP2011525700A5

JP2011525700A5 -

Info

Publication number: JP2011525700A5
Application number: JP2011511801A
Authority: JP
Filing date: 2009-05-28
Publication date: 2012-07-12

Description

試験装置は、電池のＩ−Ｖ特性曲線を確定するための約４００の負荷抵抗設定で電流（Ｉ）と電圧（Ｖ）を測定するために多点直接接触法を使用する。充填率（ＦＦ）と効率（Ｅｆｆ）の両方はＩ−Ｖ特性曲線から計算される。
以下、本明細書に記載の主な発明につき列記する。
［１］
（ａ）半導体基板、１つまたは複数の絶縁膜、および厚膜組成物を準備する工程、
（ｂ）前記半導体基板に前記絶縁膜を塗布する工程、
（ｃ）前記半導体基板上の絶縁膜に前記厚膜組成物を塗布する工程、
（ｄ）前記半導体、絶縁膜、および厚膜組成物を焼成する工程、
を含む半導体装置の製造方法であって、前記厚膜組成物は、
（ａ）１つまたは複数の導電性材料と、
（ｂ）１つまたは複数の無機結合剤と、
（ｃ）有機ビヒクルと、
を含み、無機成分の１〜１５％がサブミクロン粒子である、方法。
［２］
前記絶縁膜は、酸化チタン、窒化シリコン、ＳｉＮｘ：Ｈ、酸化シリコン、酸化シリコン／酸化チタンから選択される１つまたは複数の成分を含む、請求項１に記載の方法。
［３］
前記無機成分の８５〜９９％は１．５〜１０ミクロンのｄ５０を有する、［１］に記載の方法。
［４］
前記１つまたは複数の導電性材料は銀を含む、［１］に記載の方法。
［５］
前記サブミクロン粒子は銀を含む、［４］に記載の方法。
［６］
前記サブミクロン粒子は０．１〜１ミクロンのｄ５０を有する、［１］に記載の方法。
［７］
前記サブミクロン粒子は０．１〜０．６ミクロンのｄ５０を有する、［１］に記載の方法。
［８］
前記無機成分は双峰粒度分布を有する、［１］に記載の方法。
［９］
前記厚膜組成物はさらに１つまたは複数の添加剤を含む、［１］に記載の方法。
［１０］
前記１つまたは複数の添加剤は、
（ａ）Ｚｎ、Ｐｂ、Ｂｉ、Ｇｄ、Ｃｅ、Ｚｒ、Ｔｉ、Ｍｎ、Ｓｎ、Ｒｕ、Ｃｏ、Ｆｅ、
Ｃｕ、Ｃｒから選択される金属と、
（ｂ）Ｚｎ、Ｐｂ、Ｂｉ、Ｇｄ、Ｃｅ、Ｚｒ、Ｔｉ、Ｍｎ、Ｓｎ、Ｒｕ、Ｃｏ、Ｆｅ、
Ｃｕ、Ｃｒから選択される１つまたは複数の金属の金属酸化物と、
（ｃ）焼成されると（ｂ）の金属酸化物を生成可能な任意の化合物と、
（ｄ）それらの混合物と、
からなる群から選択される成分を含む、［９］に記載の方法。
［１１］
前記１つまたは複数の無機添加剤はＺｎＯを含む、［１０］に載の方法。
［１２］
前記サブミクロン粒子はさらにＺｎＯと無機結合剤とを含む、［５］に記載の方法。
［１３］
前記１つまたは複数の無機結合剤はガラスフリットを含む、［１］に記載の方法。
［１４］
前記無機成分は全組成の７０〜９５ｗｔ％である、［１］に記載の方法。 The test apparatus uses a multipoint direct contact method to measure current (I) and voltage (V) with a load resistance setting of about 400 to establish the battery's IV characteristic curve. Both filling factor (FF) and efficiency (Eff) are calculated from the IV characteristic curve.
The main inventions described in this specification are listed below.
[1]
(A) providing a semiconductor substrate, one or more insulating films, and a thick film composition;
(B) applying the insulating film to the semiconductor substrate;
(C) applying the thick film composition to an insulating film on the semiconductor substrate;
(D) firing the semiconductor, insulating film, and thick film composition;
A method of manufacturing a semiconductor device comprising: a thick film composition comprising:
(A) one or more conductive materials;
(B) one or more inorganic binders;
(C) an organic vehicle;
Wherein 1-15% of the inorganic components are submicron particles.
[2]
The method of claim 1, wherein the insulating film includes one or more components selected from titanium oxide, silicon nitride, SiNx: H, silicon oxide, silicon oxide / titanium oxide.
[3]
The method according to [1], wherein 85 to 99% of the inorganic components have a d50 of 1.5 to 10 microns.
[4]
The method of [1], wherein the one or more conductive materials comprises silver.
[5]
The method according to [4], wherein the submicron particles include silver.
[6]
The method of [1], wherein the submicron particles have a d50 of 0.1 to 1 micron.
[7]
The method of [1], wherein the submicron particles have a d50 of 0.1 to 0.6 microns.
[8]
The method according to [1], wherein the inorganic component has a bimodal particle size distribution.
[9]
The method of [1], wherein the thick film composition further comprises one or more additives.
[10]
The one or more additives are:
(A) Zn, Pb, Bi, Gd, Ce, Zr, Ti, Mn, Sn, Ru, Co, Fe,
A metal selected from Cu and Cr;
(B) Zn, Pb, Bi, Gd, Ce, Zr, Ti, Mn, Sn, Ru, Co, Fe,
A metal oxide of one or more metals selected from Cu, Cr;
(C) any compound capable of producing the metal oxide of (b) upon firing;
(D) a mixture thereof;
The method according to [9], comprising a component selected from the group consisting of:
[11]
The method of [10], wherein the one or more inorganic additives comprise ZnO.
[12]
The method according to [5], wherein the submicron particles further contain ZnO and an inorganic binder.
[13]
The method of [1], wherein the one or more inorganic binders comprise glass frit.
[14]
The method according to [1], wherein the inorganic component is 70 to 95 wt% of the total composition.

Claims

(A) providing a semiconductor substrate, one or more insulating films, and a thick film composition;
(B) applying the insulating film to the semiconductor substrate;
(C) applying the thick film composition to an insulating film on the semiconductor substrate;
(D) firing the semiconductor, insulating film, and thick film composition;
A method of manufacturing a semiconductor device comprising: a thick film composition comprising:
(A) one or more conductive materials;
(B) one or more inorganic binders;
(C) an organic vehicle;
Wherein 1-15% of the inorganic components are submicron particles.

The method of claim 1, wherein the submicron particles comprise silver.

The method of claim 1, wherein the submicron particles have a d50 of 0.1 to 1 micron.

The method of claim 1, wherein the inorganic component has a bimodal particle size distribution.

The one or more additives are:
(A) a metal selected from Zn, Pb, Bi, Gd, Ce, Zr, Ti, Mn, Sn, Ru, Co, Fe, Cu, Cr;
(B) a metal oxide of one or more metals selected from Zn, Pb, Bi, Gd, Ce, Zr, Ti, Mn, Sn, Ru, Co, Fe, Cu, Cr;
(C) any compound capable of producing the metal oxide of (b) upon firing;
(D) a mixture thereof;
The method of claim 1, comprising a component selected from the group consisting of: