JP2011253954A - Photoelectric conversion device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which can facilitate arrangement of a bypass diode, and a method for manufacturing the photoelectric conversion device.SOLUTION: A method for photoelectric conversion device includes: a first step of forming a photoelectric conversion module 202 in which photoelectric conversion cells 201 are connected in series on a substrate 20; a second step of arranging filler 204a extended in the direction of the series connection on the photoelectric conversion module 202; a third step of arranging a bypass diode 206 so as to straddle between the plurality of photoelectric conversion cells 201,...; a fourth step of arranging a back sheet 208 on the bypass diode 206 and the photoelectric conversion module 202, and a fifth step of fixing the photoelectric conversion module 202 and the bypass diode 206 with the filler 204a between the substrate 20 and the back sheet 208. Holes 32 are opened in the filler 204a across neighboring ones of the photoelectric conversion cells 201 so that the photoelectric conversion cells 201 are exposed in the holes 32. In the third step, the bypass diode 206 is arranged in the holes 32 of the filler 204a.

Description

  The present invention relates to a photoelectric conversion device and a manufacturing method thereof.

  As a power generation system using sunlight, a photoelectric conversion device in which semiconductor thin films such as amorphous and microcrystals are stacked is used.

  In the photoelectric conversion device, a plurality of photoelectric conversion cells are connected in series and parallel so that a practical electrical output can be taken out. A plurality of connected photoelectric conversion cells are sealed with a light-transmitting substrate and a filler mainly composed of an ethylene vinyl acetate copolymer (EVA) to form a photoelectric conversion module. When such a photoelectric conversion module is installed outdoors, when a certain photoelectric conversion cell in the photoelectric conversion module becomes a shadow of something and power generation becomes insufficient, the photoelectric conversion cell becomes a resistance. At this time, a potential difference of the product of the resistance value and the flowing current is generated in both electrodes of the photoelectric conversion cell. That is, a reverse bias voltage is applied to the photoelectric conversion cell, and the cell generates heat. Such a situation is called a hot spot. If this hot spot phenomenon occurs and the temperature of the photoelectric conversion cell continues to rise, in the worst case, the photoelectric conversion cell is destroyed and a predetermined electric output cannot be taken out from the photoelectric conversion module.

  Therefore, in order to prevent damage to the photoelectric conversion module due to hot spots, a method of connecting a bypass diode to the photoelectric conversion cell so as to be reverse-biased with respect to the normal output is employed. By providing a bypass diode, even if a photoelectric conversion cell somewhere is hidden behind and the power generation amount falls, current flows through the bypass diode avoiding that part, so the influence of the shadow part is It will not extend to the whole.

  By the way, in a photoelectric conversion apparatus, many photoelectric conversion cells are connected in series and parallel, and the process which arrange | positions a bypass diode separately with respect to each photoelectric conversion cell, and is electrically connected is required. Therefore, a configuration of a photoelectric conversion device that can perform such processing simply and quickly is desired.

  One aspect of the method for manufacturing a photoelectric conversion device according to the present invention includes a first step of forming a photoelectric conversion module in which photoelectric conversion cells are connected in series on a substrate, and a first step extending along the direction of series connection. A second step of disposing one filler on the photoelectric conversion module, a third step of disposing a diode so as to straddle a plurality of photoelectric conversion cells, and a second step of disposing a back sheet on the diode and the photoelectric conversion module. 4 and a fifth step of fixing the photoelectric conversion module and the diode with the first filler between the substrate and the backsheet. In the second step, the first filler has a plurality of photoelectric conversions. A hole for exposing the photoelectric conversion cell is formed across the cell, and in the third step, a diode is disposed in the hole of the first filler.

  Moreover, one aspect of the photoelectric conversion device according to the present invention includes a photoelectric conversion module in which photoelectric conversion cells formed on a substrate are connected in series, a filler disposed on the photoelectric conversion module, and a position on the filler. The present invention relates to a photovoltaic device having a backsheet, and includes a diode embedded in a filler and disposed on a photoelectric conversion module so as to straddle a plurality of photoelectric conversion cells.

  ADVANTAGE OF THE INVENTION According to this invention, the photoelectric conversion apparatus which made easy installation of a bypass diode, and its manufacturing method can be provided.

It is sectional drawing which shows the structure of the photoelectric conversion apparatus in 1st Embodiment of this invention. It is an internal perspective view explaining the structure of the photoelectric conversion apparatus in 1st Embodiment of this invention. It is an expanded sectional view which shows the structure of the photoelectric conversion module in embodiment of this invention. It is an internal perspective view explaining the structure of the other photoelectric conversion apparatus in 1st Embodiment of this invention. It is sectional drawing which shows the structure of the photoelectric conversion apparatus in 2nd Embodiment of this invention. It is an internal perspective view explaining the structure of the photoelectric conversion apparatus in 2nd Embodiment of this invention.

  As shown in FIG. 1, the photoelectric conversion device 200 according to the first embodiment of the present invention includes a photoelectric conversion module 202, a bypass diode 206, a back sheet 208, and a filler 204a. FIG. 1 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 200 along the extending direction of the bypass diode 206. In order to clearly show the characteristics of the first embodiment of the present invention, FIG. 2 shows a perspective view of the photoelectric conversion device 200 with the back sheet 208 removed.

  Below, the manufacturing method of the photoelectric conversion apparatus 200 in 1st Embodiment of this invention is demonstrated using FIG.1 and FIG.2.

  As shown in the enlarged sectional view of FIG. 3, the photoelectric conversion module 202 has an amorphous silicon photoelectric conversion unit (a) having a substrate 20 as a light incident side and a wide band gap as a transparent electrode layer 22 and a top cell from the light incident side. -Si unit) 24, an intermediate layer 26, and a microcrystalline silicon photoelectric conversion unit (μc-Si unit) 28 having a narrower band gap than the a-Si unit 24 and a back electrode layer 30 as a bottom cell. In this embodiment, a tandem photoelectric conversion device in which the a-Si unit 24 and the μc-Si unit 28 are stacked will be described as an example. However, the scope of the present invention is not limited to this, A single-type photoelectric conversion device using only one of the a-Si unit 24 and the μc-Si unit 28 or a photoelectric conversion device to which another type of photoelectric conversion unit is applied may be used.

For the substrate 20, for example, a material having transparency in at least the visible light wavelength region, such as a glass substrate or a plastic substrate, can be applied. A transparent electrode layer 22 is formed on the substrate 20. The transparent electrode layer 22 is doped with tin oxide (SnO ₂ ), zinc oxide (ZnO), indium tin oxide (ITO), etc. with tin (Sn), antimony (Sb), fluorine (F), aluminum (Al), etc. It is preferable to use at least one or a combination of a plurality of transparent conductive oxides (TCO). In particular, zinc oxide (ZnO) is preferable because it has high translucency, low resistivity, and excellent plasma resistance. The transparent electrode layer 22 can be formed by, for example, a sputtering method or a CVD method.

When the photoelectric conversion module 202 has a configuration in which a plurality of photoelectric conversion cells 201 are connected in series, the slit S1 is formed in the transparent electrode layer 22 and is patterned into a strip shape. For example, the transparent electrode layer 22 can be patterned into a strip shape using a YAG laser having a wavelength of 1064 nm, an energy density of 13 J / cm ² , and a pulse frequency of 3 kHz.

On the transparent electrode layer 22, a p-type layer, an i-type layer, and an n-type layer of silicon-based thin film are sequentially laminated to form an a-Si unit 24. The a-Si unit 24 includes silicon-containing gas such as silane (SiH ₄ ), disilane (Si ₂ H ₆ ), dichlorosilane (SiH ₂ Cl ₂ ), carbon-containing gas such as methane (CH ₄ ), diborane (B ₂ H). ₆ ) Plasma chemical vapor deposition in which a gas mixture is formed by mixing a mixed gas obtained by mixing a p-type dopant-containing gas such as phosphine (PH ₃ ) or the like and a diluent gas such as hydrogen (H ₂ ). It can be formed by a growth method (CVD method). As the plasma CVD method, for example, an RF plasma CVD method of 13.56 MHz is preferably applied.

An intermediate layer 26 is formed on the a-Si unit 24. The intermediate layer 26 is preferably made of a transparent conductive oxide (TCO) such as zinc oxide (ZnO) or silicon oxide (SiO _x ). In particular, it is preferable to use zinc oxide (ZnO) or silicon oxide (SiO _x ) doped with magnesium (Mg). The intermediate layer 26 can be formed by sputtering, for example. The thickness of the intermediate layer 26 is preferably in the range of 10 nm to 200 nm. The intermediate layer 26 may not be provided.

On the intermediate layer 26, a μc-Si unit 28 in which a p-type layer, an i-type layer, and an n-type layer are sequentially laminated is formed. The μc-Si unit 28 includes silicon-containing gases such as silane (SiH ₄ ), disilane (Si ₂ H ₆ ), dichlorosilane (SiH ₂ Cl ₂ ), carbon-containing gases such as methane (CH ₄ ), diborane (B ₂ H ₆ ) Plasma CVD method in which a mixed gas obtained by mixing a p-type dopant containing gas such as phosphine (PH ₃ ) and a mixed gas containing a diluting gas such as hydrogen (H ₂ ) is formed into a plasma. Can be formed. As for the plasma CVD method, it is preferable to apply, for example, a 13.56 MHz RF plasma CVD method in the same manner as the a-Si unit 24.

When a plurality of cells are connected in series, a slit S2 is formed in the a-Si unit 24 and the μc-Si unit 28 and patterned into a strip shape. A slit S2 is formed by irradiating a position 50 μm lateral from the position of the slit S1 formed in the transparent electrode layer 22 to form the slit S2, and the a-Si unit 24, the intermediate layer 26, and the μc-Si unit 28 are patterned into strips. . For example, a YAG laser having an energy density of 0.7 J / cm ² and a pulse frequency of 3 kHz is preferably used.

A back electrode layer 30 is formed on the μc-Si unit 28. The back electrode layer 30 preferably has a structure in which a transparent conductive oxide (TCO) and a reflective metal are sequentially laminated. As the transparent conductive oxide (TCO), tin oxide (SnO ₂ ), zinc oxide (ZnO), indium tin oxide (ITO), etc., or those doped with impurities are used. For example, zinc oxide (ZnO) doped with aluminum (Al) as an impurity may be used. Moreover, as a reflective metal, metals, such as silver (Ag) and aluminum (Al), can be used. The transparent conductive oxide (TCO) can be formed by, for example, a sputtering method or a CVD method. The back electrode layer 30 is preferably about 1 μm in total. It is preferable that at least one of the back electrode layers 30 is provided with unevenness for enhancing the light confinement effect.

When a plurality of cells are connected in series, a slit S3 is formed in the back electrode layer 30 and patterned into a strip shape. A slit S3 is formed by irradiating YAG laser at a position 50 μm lateral from the position of the slit S2 formed in the a-Si unit 24 and the μc-Si unit 28, and the back electrode layer 30 is patterned in a strip shape. A YAG laser having an energy density of 0.7 J / cm ² and a pulse frequency of 4 kHz is preferably used.

  Accordingly, the back electrode layer 30 of one photoelectric conversion cell 201 is electrically connected to the transparent electrode layer 22 of the adjacent photoelectric conversion cell 201 via the back electrode layer 30 embedded in the slit S2, and the adjacent photoelectric conversion is performed. The cells 201 and 201 are the photoelectric conversion module 202 connected in series.

  Next, the filler 204a and the bypass diode 206 are mounted. The filler 204a is a film-like or sheet-like member made of an insulating material having thermoplasticity. The material of the filler 204a is preferably, for example, EVA, ethylene resin such as EEA, PVB, silicone, urethane, acrylic, or epoxy resin. The filler 204a has a size approximately the same as that of the substrate 20. It is to be noted that the thickness of the filler 204a is preferably equal to or less than the thickness of the bypass diode 206, preferably equal to the thickness of the bypass diode 206.

  The filler 204 a is disposed so as to cover almost the entire surface of the back electrode layer 30 of the photoelectric conversion module 202. A plurality of holes 32 are formed in the filling material 204a at a predetermined pitch P1 along the extending direction, and the holes 32 are used for alignment of the bypass diode 206.

  The holes 32 formed in the filler 204a are formed at the same pitch P2 as the bypass diode 206. For example, when the bypass diode 206 is provided for each of the photoelectric conversion cells 201 connected in series, the holes 32 are formed at the same pitch P2 as the arrangement pitch P1 of the photoelectric conversion cells 201 as shown in FIG. . The hole 32 is shaped and sized so that the position of the bypass diode 206 is not spatially displaced when the bypass diode 206 is disposed in the hole 32. And the filler 204a is arrange | positioned on the back surface electrode layer 30 of the photoelectric conversion module 202 so that the hole 32 may straddle the back surface electrode layer 30 of the photoelectric conversion cells 201 and 201 which adjoin.

  The bypass diode 206 is provided in the hole 32 of the filler 204a in order to prevent damage to the photoelectric conversion cell 201 when a hot spot occurs in the photoelectric conversion device 200. The bypass diode 206 is connected to the photoelectric conversion cell 201 so that the voltage is applied to the bypass diode 206 in a reverse bias state in a state where the photoelectric conversion cell 201 is normally generating power. When the bypass diode 206 is disposed in the hole 32 of the filler 204a, an adhesive is applied to a part of the filler 204a or a double-sided tape is applied, and the filler 204a is applied to the back electrode layer 30. Temporarily fix it.

  For example, in the case where the bypass diode 206 is provided for each of the photoelectric conversion cells 201 connected in series, the bypass diode 206 is disposed in each of the holes 32 provided in the filler 204a as described above, and the adjacent photoelectric conversion cells 201 are arranged. The anode electrode and the cathode electrode of the bypass diode 206 are connected to the back electrode layer 30 of the conversion cells 201 and 201, respectively. The connection between the back electrode layer 30 and the anode electrode or the cathode electrode may be performed by general soldering or by mechanical pressure bonding by sealing the back sheet 208.

  Further, the bypass diode 206 may be provided so as to straddle the plurality of photoelectric conversion cells 201,... Without providing the bypass diode 206 for each of the photoelectric conversion cells 201,. In this case, as shown in FIG. 4, holes 32 are provided in the filler 204a at a pitch P3 obtained by adding a plurality of photoelectric conversion cells 201,. Moreover, the hole 32 is sized so as to straddle the plurality of photoelectric conversion cells 201. The bypass diode 206 performs photoelectric conversion so that the voltage is applied to the bypass diode 206 in a reverse bias state in a state where the photoelectric conversion cell 201 is normally generating power across the plurality of photoelectric conversion cells 201. Connect to cell 201.

  In this manner, the photoelectric conversion module 202 on which the bypass diode 206 is arranged using the filler 204a is covered with the back sheet 208 and sealed. The back sheet 208 is made of a laminated body made of PET / Al foil / PET, a single layer of a resin such as fluorine resin (ETFE, PVDF, PCTFE, etc.), PC, PET, PEN, PVF, acrylic, or a metal foil. A flexible and weather-resistant material having a sandwiched structure is used. The back sheet 208 is disposed so as to cover the bypass diode 206 disposed on the back electrode layer 30 by using the filler 204a. Then, pressure is applied to the back sheet 208 toward the back electrode layer 30 while heating the laminated body to a temperature of about 150 ° C. Thereby, the filler 204a is melted, and the photoelectric conversion cell 201 is fixed between the substrate 20 and the back sheet 20, and the photoelectric conversion device 200 according to the first embodiment of the present invention is completed.

  Note that an outer peripheral portion of the photovoltaic device 200 according to the first embodiment of the present invention may be provided with a frame made of Al through an elastic body such as butyl rubber or a resin such as silicone.

  The effects of the method for manufacturing the photovoltaic device 200 according to the first embodiment of the present invention will be described below.

  (1) The thickness of the filler 204a is made equal to the thickness of the bypass diode 206. Thereby, the bypass diode 206 is always in contact with the back sheet 208 in the step of heating and pressurizing the laminated body including the photoelectric conversion module 203, the filler 204a, the bypass diode 206, and the back sheet 208. As a result, the bypass diode 206 is pressed from the back sheet 208 toward the back electrode layer 30, so that the anode electrode and the cathode electrode of the bypass diode 206 can always touch the surface of the back electrode layer 30. Therefore, good electrical connection between the anode and cathode electrodes and the back electrode layer 30 can be obtained without performing operations such as soldering.

  (2) The thickness of the filler 204a is made equal to the thickness of the bypass diode 206. Thereby, the level | step difference of the back seat | sheet 208 produced with the bypass diode 206 and the filler 204a can be eased, and it can be made smooth. As a result, it is possible to suppress the back sheet 208 from being lifted by a step, and to reduce the unevenness of the back sheet 208. By reducing the unevenness of the back sheet 208, it is possible to prevent the external force from being concentrated on a part of the photoelectric conversion cell 201 and applying the force, thereby preventing the photoelectric conversion cell 201 from being destroyed.

  (3) A filler 204a having a size substantially the same as that of the substrate 20 is used. As a result, when the filler 204a is disposed on the back electrode layer 30 formed on the substrate 20, the bypass diode 206 can be formed in a predetermined manner simply by arranging the substrate 20 and the filler 204a so that the ends and corners thereof overlap each other. Therefore, the filler 204a and the bypass diode 206 can be aligned more accurately and quickly.

  (4) The filler 204a is temporarily fixed to the back electrode layer 30 by applying an adhesive to the surface that contacts the back electrode layer 30 or by applying a double-sided tape. Thereby, it is possible to prevent the displacement of the filler 204a that occurs when the filler 204a is disposed on the back electrode layer 30 of the photoelectric conversion module 202 and the bypass diode 206 is disposed in the hole 32 of the filler 204a. It becomes. As a result, the bypass diode 206 can be disposed in the hole 32 of the filler 204a more accurately and quickly.

  (5) The hole 32 is formed in the filler 204 a based on the interval between the photoelectric conversion cells 201, 201, and the bypass diode 206 is disposed in the hole 32. As a result, the following effects can be obtained.

  (A) The bypass diode 206 can be aligned only by arranging the bypass diode 206 in the hole 32. Therefore, it is possible to reduce the burden of the alignment operation of the bypass diode 206 and to align the bypass diode 206 more quickly.

  (B) The bypass diode 206 is disposed in the hole 32 of the filler 204a, the filler 204a is heated and melted, pressurized, and the photoelectric conversion device 200 is formed while venting air. Thereby, it can embed with the filler 204a so that a space may not be formed around the bypass diode 206. As a result, it is possible to prevent a space from being formed around the bypass diode 206, and to better prevent moisture from entering the photoelectric conversion module 202.

  Next, a photoelectric conversion device 300 according to the second embodiment of the present invention will be described. In addition, the same code | symbol is used for the structure similar to 1st Embodiment, and description is abbreviate | omitted. The second embodiment differs from the first embodiment in that a filler 204b is provided. The difference between the second embodiment and the first embodiment will be described below with reference to FIG. 5 which is a cross-sectional view of a photovoltaic device 300 according to the second embodiment and FIG. 6 which is an internal perspective view. FIG. 5 is a diagram schematically showing a cross-sectional structure of the photoelectric conversion device 300 along the extending direction of the filler 210, the bypass diode 206, and the filler 212. FIG. 6 is a perspective view of the photoelectric conversion device 300 with the back sheet 208 removed in order to clearly show the features of the present invention. In the internal perspective view of FIG. 6, the bypass diode 206 covered with the filler 204b and the hole 32 of the filler 204a are indicated by broken lines in order to clarify the configuration. The filler 204a is a tape-like, film-like or sheet-like member made of an insulating material having heat melting properties. In the present embodiment, unlike the first embodiment, the filler 204a is not limited to a film shape or a sheet shape, and may be a tape shape, and may not be approximately the same size as the substrate 20. The material of the filler 204a is preferably, for example, EVA, ethylene resin such as EEA, PVB, silicone, urethane, acrylic, or epoxy resin.

  A plurality of holes 32 are formed in the filler 204a at a predetermined pitch P2 along the extending direction. In the hole 32, the bypass diode 206 is disposed in the hole 32, and the bypass diode 206 is disposed on the back electrode layer 30. When the bypass diode 206 is disposed in the hole 32 of the filler 204a, an adhesive is applied to a part of the filler 204a or a double-sided tape is applied, and the filler 204a is applied to the back electrode layer 30. Temporarily fix it.

  The filler 204b is disposed on the stacked body in which the bypass diode 206 is disposed on the back electrode layer 30 of the photoelectric conversion module 202 formed on the substrate 20 using the filler 204a. The filler 204b is a tape-like, film-like or sheet-like member made of an insulating material having heat melting properties. The filler 204b is made of the same material as the filler 204a and has a size substantially the same as that of the substrate 20. Note that the thickness of the filler 204b is preferably thicker than that of the filler 204a. Also, a non-heat-meltable member in the form of a tape, film or sheet made of an insulating material having a size approximately equal to or greater than that of the filler 204a and not greater than the filler 204b is provided between the fillers 204a and 204b. You may arrange.

  The back sheet 208 is disposed so as to cover the filler 204b. A pressure is applied to the back sheet 208 toward the back electrode layer 30 while heating the laminated body including the photoelectric conversion module 203, the filler 204 a, the bypass diode 206, the filler 204 b, and the back sheet 208 to a temperature of about 150 ° C. Thus, by melting and integrating the filler 204a and the filler 204b, the photoelectric conversion cell 201 is fixed between the substrate 20 and the back sheet 20, and the photoelectric conversion device 300 according to the second embodiment of the present invention is provided. Complete.

  In the second embodiment, the following effects can be obtained in addition to the same effects as in the first embodiments (3) and (4).

  (6) The thickness of the filler 204a is made equal to the thickness of the vibrator ode 206. As a result, the bypass diode 206 is always in contact with the filler 204b in the step of heating and pressurizing the laminate composed of the photoelectric conversion module 203, the filler 204a, the bypass diode 206, the filler 204b, and the back sheet 208. As a result, the bypass diode 206 is pressed from the filler b toward the back electrode layer 30, so that the anode electrode and the cathode electrode of the bypass diode 206 can always touch the surface of the back electrode layer 30. Therefore, good electrical connection between the anode and cathode electrodes and the back electrode layer 30 can be obtained without performing operations such as soldering.

  (7) The total thickness of the filler 204b and the filler 204a is made thicker than that of the bypass diode 206. Thereby, when the filler 204b is melted, the step on the surface of the back sheet 208 caused by the back electrode 30 and the bypass diode 206 can be relaxed and flattened. As a result, it is possible to suppress the back sheet 208 from being lifted by a step, and to reduce the unevenness of the back sheet 208. By reducing the unevenness of the back sheet 208, it is possible to prevent the external force from being concentrated on a part of the photoelectric conversion cell 201 and applying the force, thereby preventing the photoelectric conversion cell 201 from being destroyed.

  As described above, according to the photoelectric conversion device of the present invention, it is possible to prevent the photoelectric conversion module from being damaged by the bypass diode when a hot spot occurs, and to reduce the reliability caused by providing the bypass diode. Can be suppressed. Furthermore, the bypass diode can be easily installed when the photoelectric conversion device is manufactured.

  20 Substrate, 22 Transparent electrode layer, 24 Amorphous silicon photoelectric conversion unit, 26 Intermediate layer, 28 Microcrystalline silicon photoelectric conversion unit, 30 Back electrode layer, 32 holes, 200,300 Photoelectric conversion device, 201 Photoelectric conversion cell, 202 Photoelectric conversion Module, 204a filler, 204b filler, 206 bypass diode, 208 backsheet.

Claims (8)

A first step of forming a photoelectric conversion module in which photoelectric conversion cells are connected in series on a substrate;
A second step of disposing a first filler extending along the direction of the series connection on the photoelectric conversion module;
A third step of disposing a diode across the plurality of photoelectric conversion cells;
A fourth step of disposing a backsheet on the diode and the photoelectric conversion module;
A fifth step of fixing the photoelectric conversion module and the diode with the first filler between the substrate and the backsheet;
With
In the second step, a hole through which the photoelectric conversion cell is exposed is formed across the plurality of photoelectric conversion cells in the first filler, and in the third step, the first filler is formed. A method of manufacturing a photoelectric conversion device, wherein the diode is disposed in a hole of the photoelectric conversion device. It is a manufacturing method of the photoelectric conversion device according to claim 1,
The method for manufacturing a photoelectric conversion device, wherein a thickness of the first filler is equal to or less than a thickness of the diode. It is a manufacturing method of the photoelectric conversion device according to claim 1,
The fourth step is a step of disposing a back sheet on the diode and the photoelectric conversion module after disposing the second filler so as to cover the diode disposed in the hole of the first filler. A method for manufacturing a photoelectric conversion device, wherein: It is a manufacturing method of the photoelectric conversion device according to claim 3,
The method for manufacturing a photoelectric conversion device, wherein a thickness of the second filler is thicker than a thickness of the first filler. It is a manufacturing method of the photoelectric conversion device according to any one of claims 1 to 4,
In the second step, the first filler is bonded to the photoelectric conversion module with an adhesive. It is a manufacturing method of the photoelectric conversion device according to any one of claims 1 to 4,
In the second step, the first filler is bonded to the photoelectric conversion module with a double-sided tape. A photoelectric conversion module in which photoelectric conversion cells formed on a substrate are connected in series;
A filler disposed on the photoelectric conversion module;
A backsheet positioned on the filler;
A photovoltaic device having
A photoelectric conversion device comprising a diode embedded in the filler and disposed on the photoelectric conversion module so as to straddle the plurality of photoelectric conversion cells. The photoelectric conversion device according to claim 7,
The photoelectric conversion device, wherein the diode and the back sheet are in contact with each other.

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