JP2011233605A - Package for optical semiconductor device and optical semiconductor device - Google Patents

Package for optical semiconductor device and optical semiconductor device Download PDF

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JP2011233605A
JP2011233605A JP2010100447A JP2010100447A JP2011233605A JP 2011233605 A JP2011233605 A JP 2011233605A JP 2010100447 A JP2010100447 A JP 2010100447A JP 2010100447 A JP2010100447 A JP 2010100447A JP 2011233605 A JP2011233605 A JP 2011233605A
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optical semiconductor
semiconductor device
substrate
package
region
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Takashi Takeoka
岳志 竹岡
Ayami Noda
彩未 野田
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Abstract

PROBLEM TO BE SOLVED: To provide a package for an optical semiconductor device capable of sufficiently reflecting light emitted from the optical semiconductor device, even if the package is reduced in size and thickness.SOLUTION: Light emitted from the optical semiconductor device 4 can be sufficiently reflected, even if the package is reduced in size and thickness, because outgoing light is reflected at high-rate and transmitting outgoing light through a substrate 2 can be suppressed by forming an insulating reflection coat 8 with a high reflection efficiency in an exposed region 7 where the substrate 2 is exposed at a circumference of electrodes 3a, 3b.

Description

本発明は、樹脂基板に電極を形成してなる光半導体装置用パッケージおよびそれを用いた光半導体装置に関する。   The present invention relates to an optical semiconductor device package in which electrodes are formed on a resin substrate, and an optical semiconductor device using the same.

従来の光半導体装置としては、樹脂基板に配線パターンを兼ねた電極が形成され、発光ダイオードなどの光半導体素子が電極に搭載され、ボンディングワイヤで光半導体素子と電極とが導通接続され、光半導体素子とボンディングワイヤを保護すると共に、電極を覆うレンズ１０６が透光性樹脂により形成されるものがある（例えば、特許文献１参照）。   As a conventional optical semiconductor device, an electrode also serving as a wiring pattern is formed on a resin substrate, an optical semiconductor element such as a light emitting diode is mounted on the electrode, and the optical semiconductor element and the electrode are electrically connected by a bonding wire. In some cases, a lens 106 that protects an element and a bonding wire and covers an electrode is formed of a translucent resin (see, for example, Patent Document 1).

以下、図２を用いて従来の光半導体装置について説明する。
図２は従来の光半導体装置の構成を示す図であり、図２（ａ）は従来の光半導体装置を示した上面図、図２（ｂ）は図２（ａ）のＹ−Ｙ’線に沿った断面図である。図２（ａ）においては、説明のためにレンズ１０６を省略している。 Hereinafter, a conventional optical semiconductor device will be described with reference to FIG.
FIG. 2 is a diagram showing a configuration of a conventional optical semiconductor device, FIG. 2 (a) is a top view showing the conventional optical semiconductor device, and FIG. 2 (b) is a YY ′ line in FIG. 2 (a). FIG. In FIG. 2A, the lens 106 is omitted for explanation.

図２において、光半導体装置１０１は、ガラスエポキシ樹脂の絶縁基板からなる基板１０２に一対の電極１０３ａ、１０３ｂが選択的にパターニングされて形成されている。電極１０３ａ、１０３ｂはパターニングにより形成された下地層と、下地層を被覆するめっき層からなり、光半導体素子１０４が銀ペースト（図示せず）を介して電極１０３ａに搭載され、ボンディングワイヤ１０５で光半導体素子１０４と電極１０３ｂとが導通接続されている。光半導体素子１０４はボンディングワイヤ１０５とともに、電極１０３ａ、１０３ｂを覆う透光性樹脂により形成されたレンズ１０６で保護されている。   In FIG. 2, an optical semiconductor device 101 is formed by selectively patterning a pair of electrodes 103a and 103b on a substrate 102 made of an insulating substrate of glass epoxy resin. The electrodes 103a and 103b are composed of a base layer formed by patterning and a plating layer covering the base layer. The optical semiconductor element 104 is mounted on the electrode 103a via a silver paste (not shown), and light is transmitted by a bonding wire 105. The semiconductor element 104 and the electrode 103b are conductively connected. The optical semiconductor element 104 is protected together with the bonding wire 105 by a lens 106 formed of a translucent resin that covers the electrodes 103a and 103b.

また、透光性樹脂には光半導体素子１０４が発する光によって励起される蛍光体（図示せず）を含有し、光半導体素子１０４の光の色と、蛍光体により励起された光の色との混合色により白色の光としている。   Further, the translucent resin contains a phosphor (not shown) excited by light emitted from the optical semiconductor element 104, and the color of light of the optical semiconductor element 104 and the color of light excited by the phosphor It is white light by the mixed color.

特開２００８−５３２９０号公報JP 2008-53290 A

しかしながら、前記従来の構成では、光半導体装置１０１の基板１０２は発光面側において、電極１０３ａ、１０３ｂの領域を除いて露出し、絶縁基板の露出領域１０７が形成される。そのため、露出領域１０７の反射率は絶縁基板を構成するガラスエポキシ樹脂の影響を受けるという課題がある。例えば、一般的に用いられているガラスエポキシ樹脂の場合は黄色、緑色、青色、黒色であり、光を吸収し光反射率が著しく低下する。   However, in the conventional configuration, the substrate 102 of the optical semiconductor device 101 is exposed on the light emitting surface side except for the regions of the electrodes 103a and 103b, and the exposed region 107 of the insulating substrate is formed. Therefore, there is a problem that the reflectance of the exposed region 107 is affected by the glass epoxy resin that constitutes the insulating substrate. For example, generally used glass epoxy resins are yellow, green, blue, and black, and absorb light and light reflectance is remarkably reduced.

一方、酸化チタンを混合して光反射率を高めた白色樹脂で基板１０２を構成し、光反射率を向上することも知られている。しかし、光半導体装置１０１の小型化、薄型化にともない、基板１０２の厚みを薄くすると、光半導体素子１０４が発する光が基板１０２で反射せず、露出領域１０７の基板１０２を透過するため、反射率が低下するという課題がある。   On the other hand, it is also known that the substrate 102 is made of a white resin mixed with titanium oxide to increase the light reflectance to improve the light reflectance. However, if the thickness of the substrate 102 is reduced as the optical semiconductor device 101 is reduced in size and thickness, the light emitted from the optical semiconductor element 104 is not reflected by the substrate 102 but is transmitted through the substrate 102 in the exposed region 107. There is a problem that the rate decreases.

本発明は、前記従来の課題を解決するもので、小型化、薄型化した場合であっても、光半導体素子の発する光を十分に反射することを目的とする。   SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and an object thereof is to sufficiently reflect light emitted from an optical semiconductor element even when it is reduced in size and thickness.

前記従来の目的を達成するために、本発明の光半導体装置は、絶縁基板からなる基板と、前記基板上に選択的に形成されて素子搭載領域または導電材接続領域を備える複数の電極と、前記電極の非形成領域である前記基板が露出した領域に形成される前記基板より反射率の高い絶縁反射被膜とを有することを特徴とする。   In order to achieve the conventional object, an optical semiconductor device of the present invention includes a substrate made of an insulating substrate, and a plurality of electrodes selectively formed on the substrate and provided with an element mounting region or a conductive material connection region, And an insulating reflective coating having a higher reflectance than the substrate formed in a region where the substrate, which is a region where the electrode is not formed, is exposed.

また、前記電極として、前記素子搭載領域を備える前記電極および前記導電材接続領域を備える前記電極からなる１または複数対の前記電極を有しても良い。
また、前記絶縁反射被膜が酸化チタンからなることが好ましい。 The electrode may include one or a plurality of pairs of the electrodes including the electrode including the element mounting region and the electrode including the conductive material connection region.
The insulating reflective coating is preferably made of titanium oxide.

また、前記絶縁反射被膜が酸化チタンからなる白色塗料で形成されることが好ましい。
さらに、本発明の光半導体装置は、前記光半導体装置用パッケージと、前記素子搭載領域に搭載される光半導体素子と、前記光半導体素子と前記導電材接続領域とを導通接続する導電材と、少なくとも前記光半導体素子と前記導電材とを被覆する透光性樹脂により形成されるレンズとを有することを特徴とする。 Further, it is preferable that the insulating reflective coating is formed of a white paint made of titanium oxide.
Furthermore, the optical semiconductor device of the present invention includes the optical semiconductor device package, an optical semiconductor element mounted in the element mounting region, a conductive material that conductively connects the optical semiconductor element and the conductive material connection region, It has a lens formed of a translucent resin that covers at least the optical semiconductor element and the conductive material.

また、前記絶縁反射被膜が前記光半導体素子の発光面より下側に形成されることが好ましい。
以上により、小型化、薄型化した場合であっても、光半導体素子の発する光を十分に反射することができる。 Moreover, it is preferable that the said insulating reflective film is formed below the light emission surface of the said optical semiconductor element.
As described above, the light emitted from the optical semiconductor element can be sufficiently reflected even when it is reduced in size and thickness.

以上のように、電極の周囲に基板が露出する露出領域に、反射効率の高い絶縁反射被膜を形成することにより、出射光を高率で反射すると共に、出射光が基板を透過することを防ぐことができるため、小型化、薄型化した場合であっても、光半導体素子の発する光を十分に反射することができる。   As described above, by forming an insulating reflective coating having a high reflection efficiency in the exposed area where the substrate is exposed around the electrodes, the emitted light is reflected at a high rate and the emitted light is prevented from passing through the substrate. Therefore, even when the size is reduced and the thickness is reduced, the light emitted from the optical semiconductor element can be sufficiently reflected.

本発明の光半導体装置の構成を示す図The figure which shows the structure of the optical semiconductor device of this invention 従来の光半導体装置の構成を示す図The figure which shows the structure of the conventional optical semiconductor device

以下本発明の実施の形態について、図面を参照しながら説明する。
図１は本発明の光半導体装置の構成を示す図であり、図１（ａ）は光半導体装置を示した上面図、図１（ｂ）は図１（ａ）のＸ−Ｘ’線に沿った断面図である。図１（ａ）においては、説明のためにレンズ６を省略している。 Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a diagram showing a configuration of an optical semiconductor device according to the present invention. FIG. 1 (a) is a top view showing the optical semiconductor device, and FIG. 1 (b) is taken along line XX ′ in FIG. FIG. In FIG. 1A, the lens 6 is omitted for explanation.

図１において、本発明に係る光半導体装置用パッケージは、ガラスエポキシ樹脂等の絶縁基板からなる基板２に一対の電極３ａ、３ｂが選択的にパターニングされる。電極３ａ及び電極３ｂの一方の端部は外部端子部分となり、外部端子部分に対する他方の端部に素子搭載領域または導電材接続領域が形成される。また、電極３ａ、３ｂはパターニングにより形成された下地層と、下地層を被覆するめっき層からなる。図では、電極として素子搭載領域を備える電極と導電材接続領域を備える電極とが一対形成される場合を例示しているが、素子搭載領域を備える電極と導電材接続領域を備える電極とを複数対形成することも可能である。さらに、素子搭載領域を備える電極を１または複数形成し、導電材接続領域を備える電極を複数形成することも可能である。   1, in the package for an optical semiconductor device according to the present invention, a pair of electrodes 3a and 3b are selectively patterned on a substrate 2 made of an insulating substrate such as a glass epoxy resin. One end portion of the electrode 3a and the electrode 3b serves as an external terminal portion, and an element mounting region or a conductive material connection region is formed at the other end portion with respect to the external terminal portion. The electrodes 3a and 3b are composed of a base layer formed by patterning and a plating layer covering the base layer. In the figure, a case where a pair of electrodes each including an element mounting region and an electrode including a conductive material connection region is formed as an electrode is illustrated. However, a plurality of electrodes including an element mounting region and electrodes including a conductive material connection region are provided. Pairing is also possible. Furthermore, it is possible to form one or a plurality of electrodes including the element mounting region and to form a plurality of electrodes including the conductive material connection region.

本発明の光半導体装置用パッケージでは、基板２の発光面側では、電極３ａ、３ｂの領域を除いて基板２が露出する露出領域７が形成され、この露出領域７に基板２に用いる樹脂より反射効率の高い絶縁反射被膜８をフォトリソグラフィ技術やインクジェット技術により選択的に形成することが特徴である。絶縁反射被膜８としては、酸化チタン、アルミナ、硫酸バリウムなどを２０〜５０重量％含有した反射率の高い絶縁被膜を用いることが好ましい。また、酸化チタンを含有した白色系粉体塗料を用いることにより、さらに反射効率が向上し好ましい。   In the package for an optical semiconductor device of the present invention, an exposed region 7 where the substrate 2 is exposed is formed on the light emitting surface side of the substrate 2 except for the regions of the electrodes 3a and 3b. It is characterized in that the insulating reflective coating 8 having a high reflection efficiency is selectively formed by a photolithography technique or an ink jet technique. As the insulating reflective coating 8, it is preferable to use a highly reflective insulating coating containing 20 to 50% by weight of titanium oxide, alumina, barium sulfate or the like. Further, it is preferable to use a white powder coating material containing titanium oxide because the reflection efficiency is further improved.

さらに、光半導体装置用パッケージにおける電極３ａの素子搭載領域に銀ペースト等（図示せず）を介して光半導体素子４を搭載し、ボンディングワイヤ５等の導電材で光半導体素子４と電極３ｂの導電材接続領域とを導通接続する。その後、少なくとも光半導体素子４とボンディングワイヤ５とを封止して保護するように、透光性樹脂によりレンズ６を形成することにより本発明の光半導体装置を形成する。レンズ６は、光半導体素子４の出射光を一定の方向に出射すると共に、透光性樹脂に含有する蛍光体で光を励起し、励起した光と光半導体素子４の出射光とを混合させて、所定の色彩の光を光半導体装置１から出射する。   Furthermore, the optical semiconductor element 4 is mounted on the element mounting region of the electrode 3a in the package for the optical semiconductor device via a silver paste or the like (not shown), and a conductive material such as a bonding wire 5 is used to connect the optical semiconductor element 4 and the electrode 3b. Conductive connection is established with the conductive material connection region. Thereafter, the optical semiconductor device of the present invention is formed by forming the lens 6 with a translucent resin so that at least the optical semiconductor element 4 and the bonding wire 5 are sealed and protected. The lens 6 emits the light emitted from the optical semiconductor element 4 in a certain direction, excites the light with a phosphor contained in the translucent resin, and mixes the excited light and the light emitted from the optical semiconductor element 4. Thus, light of a predetermined color is emitted from the optical semiconductor device 1.

以上のように、基板２の発光面側における電極３ａ、３ｂが形成された周囲の露出領域７に、反射効率の高い絶縁反射被膜８を形成することにより、酸化チタン等も混合しない安価な樹脂基板を用いた場合であっても、光半導体素子４の出射光を効率よく反射することができる。さらに、光半導体装置１の小型化、薄型化に伴い基板２の厚みを薄くした場合であっても、従来の高反射材料が混合された樹脂基板に比べて有利である。それは小型化、薄型化に伴うもう一つの課題として基板強度の低下があげられるが、本発明によると強度の面では反射率の高さを求める必要のない強度の高い基板２で補うことができ、そのため強度に劣るが高濃度の高反射材を添加したことからなる反射率の高い絶縁反射皮膜８を高反射材の含有量を低下させる必要なくそのまま塗布することが可能であり、反射率を維持したままこれを解決することができる為だからである。   As described above, by forming the insulating reflection coating 8 having high reflection efficiency in the surrounding exposed region 7 where the electrodes 3a and 3b are formed on the light emitting surface side of the substrate 2, an inexpensive resin that does not mix titanium oxide or the like. Even when the substrate is used, the light emitted from the optical semiconductor element 4 can be efficiently reflected. Furthermore, even when the thickness of the substrate 2 is reduced as the optical semiconductor device 1 is reduced in size and thickness, it is more advantageous than a conventional resin substrate mixed with a highly reflective material. Another problem associated with downsizing and thinning is a reduction in substrate strength. According to the present invention, however, the strength of the substrate 2 that does not require high reflectivity can be compensated for in terms of strength. Therefore, it is possible to apply the insulating reflective coating 8 having a high reflectivity, which is inferior in strength but having a high concentration of the high-reflectance material, without having to reduce the content of the high-reflectivity material. This is because it can be solved while maintaining it.

以上のことにより、出射光が基板２を透過することなく、十分に光の反射効率を維持することができる。そのため、レンズ６の透光性樹脂に含有する蛍光体（図示せず）で励起される光の色と合わせて、光半導体素子４が発する光の色との混合色を正確に発色することができる。   As described above, the light reflection efficiency can be sufficiently maintained without the outgoing light passing through the substrate 2. Therefore, it is possible to accurately develop a mixed color with the color of light emitted from the optical semiconductor element 4 together with the color of light excited by a phosphor (not shown) contained in the translucent resin of the lens 6. it can.

このとき、絶縁反射被膜８は、光半導体素子４の発光面よりも下側（基板２側）までに形成することにより、光半導体素子４の出射光をより効率的に出射方向に反射させることができ好ましい。   At this time, the insulating reflective coating 8 is formed below the light emitting surface of the optical semiconductor element 4 (on the side of the substrate 2), so that the light emitted from the optical semiconductor element 4 is more efficiently reflected in the emission direction. This is preferable.

なお、絶縁反射被膜８の形成に際しては、インクジェット技術を用いることが、精度良く絶縁反射被膜８を形成することができるので好適である。
また、露出領域７のみに酸化チタン等の絶縁反射被膜８を形成することができるため、高価な酸化チタン等からなる高反射絶縁基板に比べ、酸化チタンの絶対的な使用量を低減することができ、比較的安価な光半導体装置１および光半導体装置用パッケージを提供することができる。 In forming the insulating reflective coating 8, it is preferable to use an ink jet technique because the insulating reflective coating 8 can be formed with high accuracy.
Further, since the insulating reflective film 8 such as titanium oxide can be formed only in the exposed region 7, it is possible to reduce the absolute amount of titanium oxide used compared to a highly reflective insulating substrate made of expensive titanium oxide or the like. It is possible to provide a relatively inexpensive optical semiconductor device 1 and an optical semiconductor device package.

本発明は、小型化、薄型化した場合であっても、光半導体素子の発する光を十分に反射することができ、樹脂基板に電極を形成してなる光半導体装置用パッケージおよびそれを用いた光半導体装置等に有用である。   INDUSTRIAL APPLICABILITY The present invention is a package for an optical semiconductor device in which light emitted from an optical semiconductor element can be sufficiently reflected even when it is downsized and thinned, and an electrode is formed on a resin substrate, and the same is used. Useful for optical semiconductor devices and the like.

１ 光半導体装置
２ 基板
３ａ 電極
３ｂ 電極
４ 光半導体素子
５ ボンディングワイヤ
６ レンズ
７ 露出領域
８ 絶縁反射被膜
１０１ 光半導体装置
１０２ 基板
１０３ａ 電極
１０３ｂ 電極
１０４ 光半導体素子
１０５ ボンディングワイヤ
１０６ レンズ
１０７ 露出領域 DESCRIPTION OF SYMBOLS 1 Optical semiconductor device 2 Substrate 3a Electrode 3b Electrode 4 Optical semiconductor element 5 Bonding wire 6 Lens 7 Exposed area 8 Insulating reflective film 101 Optical semiconductor device 102 Substrate 103a Electrode 103b Electrode 104 Optical semiconductor element 105 Bonding wire 106 Lens 107 Exposed area

Claims (6)

絶縁基板からなる基板と、
前記基板上に選択的に形成されて素子搭載領域または導電材接続領域を備える複数の電極と、
前記電極の非形成領域である前記基板が露出した領域に形成される前記基板より反射率の高い絶縁反射被膜と
を有することを特徴とする光半導体装置用パッケージ。 A substrate made of an insulating substrate;
A plurality of electrodes selectively formed on the substrate and provided with an element mounting region or a conductive material connection region;
A package for an optical semiconductor device, comprising: an insulating reflective film having a higher reflectance than the substrate formed in a region where the substrate, which is the region where the electrode is not formed, is exposed. 前記電極として、前記素子搭載領域を備える前記電極および前記導電材接続領域を備える前記電極からなる１または複数対の前記電極を有することを特徴とする請求項１記載の光半導体装置用パッケージ。   2. The optical semiconductor device package according to claim 1, wherein the electrode includes one or a plurality of pairs of the electrodes including the electrode including the element mounting region and the electrode including the conductive material connection region. 前記絶縁反射被膜が酸化チタンからなることを特徴とする請求項１または請求項２のいずれかに記載の光半導体装置用パッケージ。   The package for an optical semiconductor device according to claim 1, wherein the insulating reflective coating is made of titanium oxide. 前記絶縁反射被膜が酸化チタンからなる白色塗料で形成されることを特徴とする請求項１または請求項２のいずれかに記載の光半導体装置用パッケージ。   3. The optical semiconductor device package according to claim 1, wherein the insulating reflective coating is formed of a white paint made of titanium oxide. 請求項１〜請求項４のいずれかに記載の光半導体装置用パッケージと、
前記素子搭載領域に搭載される光半導体素子と、
前記光半導体素子と前記導電材接続領域とを導通接続する導電材と、
少なくとも前記光半導体素子と前記導電材とを被覆する透光性樹脂により形成されるレンズと
を有することを特徴とする光半導体装置。 The package for optical semiconductor devices according to any one of claims 1 to 4,
An optical semiconductor element mounted in the element mounting region;
A conductive material that electrically connects the optical semiconductor element and the conductive material connection region;
An optical semiconductor device comprising: a lens formed of a translucent resin that covers at least the optical semiconductor element and the conductive material. 前記絶縁反射被膜が前記光半導体素子の発光面より下側に形成されることを特徴とする請求項５記載の光半導体装置。   6. The optical semiconductor device according to claim 5, wherein the insulating reflective coating is formed below a light emitting surface of the optical semiconductor element.
JP2010100447A 2010-04-26 2010-04-26 Package for optical semiconductor device and optical semiconductor device Pending JP2011233605A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010100447A JP2011233605A (en) 2010-04-26 2010-04-26 Package for optical semiconductor device and optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010100447A JP2011233605A (en) 2010-04-26 2010-04-26 Package for optical semiconductor device and optical semiconductor device

Publications (1)

Publication Number Publication Date
JP2011233605A true JP2011233605A (en) 2011-11-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160238186A1 (en) * 2013-09-05 2016-08-18 Woonam KIM Insulation structure comprising insulation units and manufacturing method therefor
JP2018085515A (en) * 2016-11-25 2018-05-31 エルジー イノテック カンパニー リミテッド Semiconductor device package

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160238186A1 (en) * 2013-09-05 2016-08-18 Woonam KIM Insulation structure comprising insulation units and manufacturing method therefor
JP2018085515A (en) * 2016-11-25 2018-05-31 エルジー イノテック カンパニー リミテッド Semiconductor device package
CN108110119A (en) * 2016-11-25 2018-06-01 Lg伊诺特有限公司 Semiconductor packages
JP7109765B2 (en) 2016-11-25 2022-08-01 スージョウ レキン セミコンダクター カンパニー リミテッド Semiconductor device package
CN108110119B (en) * 2016-11-25 2022-10-11 苏州立琻半导体有限公司 Semiconductor device package

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