JP2011223010A - Spin mosfet and reconfigurable logic circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a spin MOSFET which suppresses influences on adjacent transistors by a leakage magnetic field, makes shift adjustment possible, and suppresses spin relaxation in a channel region, even when perpendicular magnetic film is used in a ferromagnetic body of MTJ in the source/drain regions of a spin MOSFET.SOLUTION: The spin MOSFET comprises a first ferromagnetic layer 72 which is disposed on a ground layer 65 and whose direction of magnetization is perpendicular to the film surface and invariable; a semiconductor layer 74 which is disposed on the first ferromagnetic layer 72 and serves as a channel; a second ferromagnetic layer 78 which is disposed on the semiconductor layer 74 and whose direction of magnetization is perpendicular to the film surface and variable; a tunnel barrier 80 which is disposed on the second ferromagnetic layer 78; a third ferromagnetic layer 82 which is disposed on the tunnel barrier 80 and whose direction of magnetization is perpendicular to the film surface and invariable and is anti-parallel to the direction of magnetization of the first ferromagnetic layer 72; a gate insulating film 90a which is disposed on the side of the semiconductor layer 74; and a gate electrode 76 which is disposed so as to be positioned on the opposite side of the semiconductor layer 74.

Description

  The present invention relates to a spin MOSFET and a reconfigurable logic circuit.

  In recent years, MRAM (Magnetic Random Access Memory) equipped with MTJ (Magnetic Tunnel Junction) having a structure in which a tunnel barrier layer is sandwiched between two perpendicular magnetization films has reduced spin injection current density and excellent thermal stability. It is attracting attention for such reasons. Here, the perpendicular magnetization film means a ferromagnetic film whose magnetization direction (easy magnetization axis direction) is substantially perpendicular to the upper surface of the perpendicular magnetization film.

  In addition, research and development of devices having new functions such as spin MOSFETs are actively conducted. One of them is a spin MOSFET whose source / drain regions are made of a magnetic material. A feature of spin MOSFETs is that their output characteristics can be controlled simply by reversing the direction of the spin moment of the ferromagnetic material in the source / drain region. Using this, re-configurable functions can be achieved. The structure of a spin MOSFET having an amplification function and a reconfigurable logic circuit can be configured (see, for example, Non-Patent Document 1).

As a writing method for inverting the spin, a writing method using a spin injection method has been proposed. It has been observed that spin inversion occurs by spin injection of a spin-polarized current. In order to use spin injection writing for a spin MOSFET, a structure in which MTJ is added to any one of the magnetic bodies constituting the source / drain regions (see, for example, Patent Document 1) has been proposed. Using the structure of Patent Document 1,
(1) Read double output can be used.
(2) Since an MTJ (ferromagnetic laminated film) is provided, there is an advantage that spin injection magnetization reversal can be used.

JP 2008-66596 A

APL84 (2004) 2307.

  Further, the use of a perpendicular magnetization film as the MTJ of the source / drain region in the spin MOSFET has been proposed by the present inventors and has been filed by the present applicant (Japanese Patent Application No. 2008-191146). In this spin MOSFET, source / drain regions are provided apart from a semiconductor substrate, a gate electrode is provided on a semiconductor region serving as a channel region between the source region and the drain region, and vertical on each of the source / drain regions. A ferromagnetic laminated film using a magnetized film is provided, and at least one of the ferromagnetic laminated films on the source / drain regions has a structure of MTJ (hereinafter also referred to as a lateral structure). By adopting such a structure, the spin MOSFET also has merits such as a decrease in spin injection write current density, a reduction in the area of the source / drain portion, and thermal stability.

  However, as will be described later, when a perpendicular magnetization film is used for the MTJ of the source / drain region, the leakage magnetic field from the magnetization fixed layer of the MTJ affects the magnetic recording layer and shift adjustment becomes impossible and adjacent to the MTJ. The problem of affecting the spin MOSFET arises. Further, in the spin MOSFET having the lateral structure using such a perpendicular magnetization film, there is a problem that the spin relaxation in the semiconductor region serving as the channel region is accelerated due to the leakage magnetic field. This problem has not been recognized so far, and was first recognized by the present inventors.

  As described above, the spin MOSFET structure using the perpendicular magnetization film as the MTJ ferromagnet in the source / drain regions has good characteristics such as low spin injection write current density and excellent thermal stability. . However, in the lateral type spin MOSFET, there is a problem that shift adjustment with respect to the magnetic field is difficult, the influence of the leakage magnetic field on the adjacent transistor, and the spin relaxation in the semiconductor region serving as the channel region are accelerated due to the leakage magnetic field. It was.

  The present invention has been made in consideration of the above circumstances, and even if a perpendicular magnetization film is used as the MTJ ferromagnetic material in the source / drain region of the spin MOSFET, the influence of the leakage magnetic field on the adjacent transistor is suppressed. An object of the present invention is to provide a spin MOSFET and a reconfigurable logic circuit that can perform shift adjustment and suppress spin relaxation in a channel region.

  The spin MOSFET according to the first aspect of the present invention has a base layer having a first region, a second region different from the first region, and a magnetization direction provided on the first region of the base layer. A first ferromagnetic layer that is perpendicular to the film surface and invariable, a semiconductor layer that becomes a channel provided on the first ferromagnetic layer, and a magnetization direction provided on the semiconductor layer is perpendicular to the film surface A variable second ferromagnetic layer, a first tunnel barrier provided on the second ferromagnetic layer, and a magnetization direction provided on the first tunnel barrier perpendicular to the film surface and unchanged. A third ferromagnetic layer having a first ferromagnetic film antiparallel to the magnetization direction of the first ferromagnetic layer, a gate insulating film provided on a side surface of the semiconductor layer, and the second region of the underlayer And provided on the opposite side of the semiconductor layer with respect to the gate insulating film. Characterized in that it comprises a gate electrode.

  The spin MOSFET according to the second aspect of the present invention has a base layer having a first region, a second region different from the first region, and a magnetization direction provided on the first region of the base layer. A first ferromagnetic layer including a first ferromagnetic film that is perpendicular to the film surface and invariable, a first tunnel barrier provided on the first ferromagnetic layer, and provided on the first tunnel barrier; A second ferromagnetic layer having a magnetization direction perpendicular to the film surface and variable; a semiconductor layer serving as a channel provided on the second ferromagnetic layer; and a magnetization direction provided on the semiconductor layer. A third ferromagnetic layer that is perpendicular to the film surface and invariable and antiparallel to the magnetization direction of the first ferromagnetic film, a gate insulating film provided on a side surface of the semiconductor layer, and the second region of the underlayer And provided on the opposite side of the semiconductor layer with respect to the gate insulating film. Characterized in that it comprises a gate electrode.

  According to the present invention, even if a perpendicular magnetization film is used as the MTJ ferromagnetic material in the source / drain region of the spin MOSFET, the influence of the leakage magnetic field on the adjacent transistor can be suppressed, shift adjustment can be performed, and the channel region can be adjusted. The spin relaxation can be suppressed.

Sectional drawing of spin MOSFET by 1st Embodiment. Sectional drawing of spin MOSFET by 2nd Embodiment. Sectional drawing of spin MOSFET by 3rd Embodiment. The figure which shows the leakage magnetic field of MTJ whose magnetization magnetic layer is in-plane magnetization and is a synthetic structure. The figure which shows the leakage magnetic field of MTJ whose magnetization magnetic layer is perpendicular magnetization and has a synthetic structure. The figure which shows the channel length dependence of the spin diffusion length in a channel area | region. Sectional drawing of spin MOSFET by 4th Embodiment. The figure explaining the in-plane shape of MTJ which is easy to carry out magnetization reversal in the case of spin injection, and the in-plane shape which is hard to do. Sectional drawing of spin MOSFET by 5th Embodiment. Sectional drawing of spin MOSFET by 6th Embodiment. Sectional drawing of spin MOSFET by 7th Embodiment. Sectional drawing of spin MOSFET by 8th Embodiment. Sectional drawing of spin MOSFET by 9th Embodiment. Sectional drawing of spin MOSFET by 10th Embodiment. Sectional drawing of spin MOSFET by 11th Embodiment. A sectional view of a spin MOSFET by a 12th embodiment. Sectional drawing explaining the manufacturing method of Example 1. FIG. The figure which shows the resistance change rate of Example 1 and the comparative example 1, and the observation result of the shift amount. The figure which shows the resistance change rate of Example 2 and the comparative example 1, and the observation result of the shift amount. The figure which shows the channel length dependence of the spin diffusion length in a channel area | region of Example 4. FIG. A circuit diagram showing a logic circuit by a 13th embodiment. The figure which shows the floating gate voltage dependence of the output of the logic circuit of 13th Embodiment. The figure which shows a logic table in case the logic circuit of 13th Embodiment functions as an AND circuit. The figure which shows a logic table in case the logic circuit of 13th Embodiment functions as an OR circuit. The figure which shows the logic circuit by the 1st modification of 13th Embodiment. The figure which shows the logic circuit by the 2nd modification of 13th Embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. However, the drawings are schematic, and the size of each part, the size ratio between the parts, and the like are different from the actual ones. In addition, even among the drawings, even if the same parts are indicated, there are some parts that are shown in different sizes and ratios.

(First embodiment)
A spin MOSFET according to a first embodiment of the present invention is shown in FIG. The spin MOSFET of this embodiment is a vertical spin MOSFET, and is formed on an SOI substrate 60 having a support substrate 61 made of Si, a buried oxide film 62, and an SOI (Silicon On Insulator) layer 63. In addition, it may be formed on a Si bulk substrate instead of the SOI substrate. A base layer 65 is formed on the SOI layer 63, and a ferromagnetic layer 72 having a magnetization substantially perpendicular to the film surface and having an invariable magnetization direction is formed on the base layer 65. A channel layer 74 made of a p-type semiconductor crystal is formed thereon. A free layer 78 made of a ferromagnetic layer having a variable magnetization direction is formed on the channel layer 74, a tunnel barrier 80 is formed on the free layer 78, and a ferromagnetic material having perpendicular magnetization is formed on the tunnel barrier 80. Layer 82 is formed. The ferromagnetic layer 82 has, for example, a synthetic structure in which a ferromagnetic film having perpendicular magnetization is stacked via a nonmagnetic film, that is, a stacked structure including a first ferromagnetic film / nonmagnetic film / second ferromagnetic film. The magnetization directions of the first and second ferromagnetic films are fixed substantially in the direction perpendicular to the film surface (invariable), and are antiferromagnetically coupled through the nonmagnetic film. That is, the ferromagnetic layer 82 is a magnetization fixed layer. In the present embodiment, the MTJ is a ferromagnetic multilayer film including a free layer 78, a tunnel barrier 80, and a ferromagnetic layer 82. A nonmagnetic metal layer 84 is formed on the ferromagnetic layer 82. Instead of the nonmagnetic metal layer 84, an antiferromagnetic layer may be used. In this case, the magnetization of the ferromagnetic layer 82 is stabilized. The ferromagnetic layer 72 may have a synthetic structure in which a ferromagnetic film having perpendicular magnetization is stacked via a nonmagnetic film. In this embodiment, the magnetization directions of the ferromagnetic films closest to the channel layer 74 of the ferromagnetic layer 72 and the ferromagnetic layer 82 are substantially antiparallel. Note that the free layer 78 may have a synthetic structure in which ferromagnetic films are stacked via a nonmagnetic film.

  Thus, in the present embodiment, the underlayer 65 includes the ferromagnetic layer 72, the channel layer 74 made of a semiconductor crystal, the free layer 78, the tunnel barrier 80, the ferromagnetic layer 82, and the nonmagnetic metal layer 84. A laminated structure is formed. This laminated structure may be laminated in reverse except for the nonmagnetic metal layer 84. That is, a laminated structure including the ferromagnetic layer 82, the tunnel barrier 80, the free layer 78, the channel layer 74 made of a semiconductor crystal, the ferromagnetic layer 72, and the nonmagnetic metal layer 84 may be formed on the base layer 65. A gate electrode 76 is formed so as to sandwich the gate insulating film 90a so as to surround the channel layer 74 of this stacked structure. An insulating film 90 is also provided between the gate electrode 76 and the base layer 65.

  In this embodiment configured as described above, a synthetic structure is used as the magnetization fixed layer 82, the magnetization fixed layer 82 is separated from the lower ferromagnetic layer 72 by the channel layer 74, and the gate electrode is formed on the side surface. Since 76 is provided, the shift of the free layer 78 immediately below the magnetization fixed layer 82 can be adjusted via the tunnel barrier. Further, even when adjacent cells are arranged closely, the influence of the leakage magnetic field can be eliminated. The spin MOSFET according to the present embodiment has a vertical structure, and the magnetization directions of the ferromagnetic layer 82 and the ferromagnetic layer 72 are antiparallel. And the direction of the magnetic field lines (not shown in FIG. 1) coming out of the ferromagnetic layer 72 are reversed, and the leakage magnetic field is almost canceled, and even if it is not canceled, The direction of flow of the spin-polarized electrons and the direction of the magnetic field lines emerging from the ferromagnetic layer 72 and the ferromagnetic layer 82 are substantially parallel or substantially anti-parallel, so that the spin-polarized electrons are affected by the leakage magnetic field. By being hardly affected, the channel layer 74 is hardly affected by the leakage magnetic field, and spin relaxation can be suppressed.

  Further, in the present embodiment, it is preferable that a source / drain region doped with an n-type impurity at a high concentration is formed on the channel layer 74 side of each interface with the ferromagnetic layer 72 and the free layer 78.

As the gate insulating film 90a, in addition to the SiO ₂ film used in the conventional MOSFET, a high dielectric material in which a metal such as Zr, Hf, or La is dissolved in SiO ₂ such as Hf silicate or Zr silicate is used. It may be used. As the gate electrode 76, p-type or n-type doped poly-Si or poly-SiGe is used. When this is also combined with a high dielectric insulating film, TiN, TaN, TaC, rare earth metal, rare earth transition metal alloy, etc. A metallic material may be used.

  In the present embodiment, since the MTJ including the free layer 78, the tunnel barrier 80, and the ferromagnetic layer 82 is provided, a spin injection writing method can be used. In the case of spin injection writing, the magnetization direction of the free layer 78 can be changed depending on whether a current is passed upward or downward in the structure shown in FIG.

  As described above, according to the present embodiment, the influence of the leakage magnetic field on the adjacent transistors can be eliminated, and shift adjustment can be made possible.

(Second Embodiment)
A spin MOSFET according to a second embodiment of the present invention is shown in FIG. The spin MOSFET of the present embodiment is a vertical spin MOSFET. In the spin MOSFET of the first embodiment shown in FIG. 1, a tunnel barrier 73 is provided between a channel layer 74 made of a semiconductor crystal and a ferromagnetic layer 72. In addition, a tunnel barrier 77 is provided between the channel layer 74 and the free layer 78. As the tunnel barriers 73 and 77, it is preferable to use a tunnel barrier capable of epitaxial growth even when the channel layer 74 is made of Ge or GaAs, such as MgO. . In the present embodiment, the ferromagnetic layer 72, the tunnel barrier 73, the channel layer 74 made of a semiconductor crystal, the tunnel barrier 77, the free layer 78, the tunnel barrier 80, the ferromagnetic layer 82, and the non-layer are formed on the base layer 65. A laminated structure composed of the magnetic metal layer 84 is formed. However, this laminated structure may be laminated in reverse except for the nonmagnetic metal layer 84, as in the first embodiment. That is, on the underlayer 65, a ferromagnetic layer 82, a tunnel barrier 80, a free layer 78, a tunnel barrier 77, a channel layer 74 made of a semiconductor crystal, a tunnel barrier 73, a ferromagnetic layer 72, and a nonmagnetic metal layer 84 are formed. A laminated structure may be used.

According to the present embodiment, as in the first embodiment, the influence of the leakage magnetic field on the adjacent transistor can be eliminated, so that spin relaxation can be suppressed and shift adjustment can be performed. Can do.
In the first and second embodiments, the lowermost SOI layer may be a Si crystal or a SiGe crystal layer. As the material of the semiconductor channel layer, Si, SiGe, GaAs, InGaAs, or the like other than Ge can be selected. Here, it is important to consider the influence of the crystal lattice of the lowermost SOI layer 63 on the lattice spacing of the magnetic layer 72 and the channel layer 74. In particular, the lattice and strain of the channel layer 74 have a great influence on the carrier mobility in the channel layer 74. The lattice spacing of the magnetic layer 72 is desirably matched to the lattice of the underlayer 65, but the semiconductor crystal lattice of the channel layer 74 is selected to be slightly different from the crystal lattice of the underlayer 65, and positively strained. By introducing, channel mobility can be improved. For example, an SiGe crystal having a Ge composition of 80% is arranged as the underlayer 65, a magnetic layer 72 lattice-matched to the crystal is laminated, and a Ge crystal layer is laminated as the channel layer 74. Then, the Ge crystal lattice of the channel layer 74 is slightly larger than the lattice of the SiGe crystal layer, which is the underlayer 65, so that it is subjected to compressive strain in the lateral direction in alignment with the underlayer 65 and is pulled in the vertical direction. Stress is applied and stretched. That is, since it receives tensile stress in the current direction of the spin MOSFET, it is effective in increasing the mobility of electrons.

(Third embodiment)
A cross-sectional view of a spin MOSFET according to a third embodiment of the present invention is shown in FIG. The spin MOSFET of this embodiment is a lateral n-type spin MOSFET, and is formed in the element region 3 of the p-type semiconductor substrate 2. The element region 3 is a semiconductor region isolated by the element isolation insulating film 4. The semiconductor region may be a partial region of the semiconductor substrate or a well region formed in the semiconductor substrate. Further, it may be an SOI layer of an SOI substrate. In the present specification, the element region 3 may be a partial semiconductor region of a p-type semiconductor substrate or a p-well region formed in an n-type substrate. Further, it may be a p-type SOI layer of an SOI substrate. The element region 3 is provided with n-type impurity diffusion regions 6a and 6b formed apart from each other. On the surfaces of these n-type impurity diffusion region 6a and n-type impurity diffusion region 6b, n ⁺ impurity diffusion regions 7a and n ⁺ -type having higher concentrations than those of n-type impurity diffusion region 6a and n-type impurity diffusion region 6b. Impurity diffusion regions 7b are provided. N-type impurity diffusion region 6a and n ⁺ impurity diffusion region 7a constitute source region 5a, and impurity diffusion region 6b and n ⁺ impurity diffusion region 7b constitute drain region 5b.

  A gate insulating film 9 is provided on the semiconductor substrate 2 to be the channel region 8 between the source region 5a and the drain region 5b, and a nonmagnetic metal gate 10 is provided on the gate insulating film 9, for example. A source portion 15a is formed on the source region 5a with the tunnel barrier 14a interposed therebetween, and a drain portion 15b is formed on the drain region 5b with the tunnel barrier 14b interposed therebetween. The source portion 15a is made of a ferromagnetic layer 18a. The drain portion 15b has a ferromagnetic laminated structure (ferromagnetic laminated film) in which the ferromagnetic layer 16b / nonmagnetic layer 17b / ferromagnetic layer 18b are laminated in this order. When the nonmagnetic layer 17b is a tunnel barrier, the drain portion 15b becomes a ferromagnetic tunnel junction (MTJ (Magnetic Tunnel Junction)). At this time, in this specification, the ferromagnetic multilayer film is also referred to as an MTJ multilayer film. In this embodiment, the drain portion 15b has an MTJ structure and the source portion 15a is made of a ferromagnetic layer. However, the source portion 15a has an MTJ structure and the drain portion 15b is made of a ferromagnetic layer. You may comprise so that it may become.

  In the present embodiment, the ferromagnetic layer 18a of the source portion 15a is a magnetization fixed layer whose magnetization direction is fixed (invariable). Further, the ferromagnetic layer 16b on the side close to the semiconductor substrate 2 of the drain portion 15b becomes a free layer (magnetic recording layer) whose magnetization direction is variable, and the ferromagnetic layer 18b far from the other semiconductor substrate 2 is fixed in magnetization. Become a layer. In the present embodiment, the magnetization direction (magnetization easy axis direction) of the ferromagnetic layers 16b, 18a, and 18b is substantially perpendicular to the film surface. In the present specification, the “film surface” means the upper surface of the laminated film.

  A nonmagnetic metal layer 20a and a nonmagnetic metal layer 20b are provided on the source portion 15a and the drain portion 15b, respectively. The source portion 15a, the nonmagnetic metal layer 20a, and the gate 10 are insulated from each other by a gate sidewall 12 made of an insulator. The drain portion 15b, the nonmagnetic metal layer 20b, and the gate 10 are insulated from a gate sidewall 12 made of an insulator. Is insulated by. The nonmagnetic metal layer 20a is connected to the wiring 42a through the plug 40a, and the nonmagnetic metal layer 20b is connected to the wiring 42b through the plug 40b.

  The spin MOSFET configured as described above has advantages such as a decrease in spin injection write current density, a reduction in the area of the source / drain portion, and thermal stability.

  However, since the magnetization fixed layer 18a of the source portion 15a generates a leakage magnetic field, it affects the spin-polarized electrons flowing through the channel 8, and also affects the spin MOSFET (not shown) adjacent to the left side in FIG. . Further, when a perpendicular magnetization film is used for the MTJ of the drain portion 15b, the leakage magnetic field from the magnetization fixed layer 18b of the MTJ affects the free layer 16b, making shift adjustment impossible and adversely affecting the adjacent spin MOSFET. The problem arises.

  When a magnetic film whose magnetization is substantially parallel to the film surface is used for the MTJ, in order to eliminate the influence of the leakage magnetic field from the magnetization fixed layer, as the magnetization fixed layer 28 of the MTJ, as shown in FIG. A synthetic antiferromagnetic laminated structure having a nonmagnetic film 28b and ferromagnetic films 28a and 28c that are antiferromagnetically coupled and have a fixed magnetization direction sandwiching the nonmagnetic film 28b is used. The synthetic structure magnetization fixed layer 28, the free layer 26, and the tunnel barrier layer 27 sandwiched between these layers constitute an MTJ. When this synthetic antiferromagnetic laminated structure is used, as shown in FIG. 4, the leakage magnetic field 29 from the ferromagnetic films 28a and 28b whose magnetization is fixed is canceled at the edge portions of the ferromagnetic films 28a and 28c. . For this reason, the problem of the leakage magnetic field does not occur in the MTJ having a magnetic film whose magnetization is substantially parallel to the film surface. However, when a synthetic antiferromagnetic multilayer structure having a perpendicular magnetization film is used as the magnetization fixed layer constituting the MTJ, as shown in FIG. 5, the upper ferromagnetic layer of the magnetization fixed layer 18 having the synthetic antiferromagnetic multilayer structure is used. An attempt is made to reduce the leakage magnetic field to the free layer 16 of the MTJ by making the film thickness of the body film 18c larger than the film thickness of the lower ferromagnetic film 18a. In FIG. 5, reference numeral 17 is a tunnel barrier layer, and reference numeral 18b 'is a nonmagnetic film. However, even if the film thickness of the upper ferromagnetic film 18c is simply made larger than the film thickness of the lower ferromagnetic film 18a, the leakage magnetic field cannot be canceled, shift adjustment becomes impossible, and the adjacent transistors cannot be adjusted. The effect of.

  Therefore, in the present embodiment, as shown in FIG. 3, a hard bias film 30a is provided on the element isolation insulating film 4 on the source part 15a side, and a hard bias film is provided on the element isolation insulating film 4 on the drain part 15b side. 30 b is provided, and the hard bias film 30 c is provided on the gate electrode 10.

  When the hard bias films 30a, 30b, and 30c are provided in this way, as shown in FIG. 3, the magnetic field lines (indicated by broken lines) output from the hard bias films 30a, 30b, and 30c and the leakage magnetic field from the magnetization fixed layer are provided. The magnetic field lines (indicated by a solid line) due to the currents cancel each other out, so that the shift of the free layer 16b directly below the magnetization fixed layer 18b can be adjusted via the tunnel barrier layer 17b. A bias magnetic field is applied in a direction in which the magnetization direction of the magnetization fixed layer 18a of the source portion 15a is more thermally stabilized. Since the hard bias films 30a and 30c are provided on the element isolation insulating film 4 serving as a boundary with the adjacent spin MOSFET, the influence of the leakage magnetic field from the MTJ on the adjacent spin MOSFET can be suppressed. .

In the present embodiment, the spin MOSFET is an nMOSFET. That is, an npn junction is formed on the semiconductor substrate. High concentration n ⁺ impurity diffusion layers 7a and 7b are formed on the substrate surface of the source region 5a and the drain region 5b. This can be formed by doping with impurities by an ion implantation method and annealing by RTA (Rappid Thermal Annealing) as in the case of forming a normal MOS transistor. When a pMOSFET is formed instead of an nMOSFET, a p-n-p junction may be formed using impurities having opposite conductivity types, and a high concentration impurity diffusion region (p ⁺ is formed on the substrate surface of the source region and the drain region. Impurity diffusion regions) may be formed. By forming the n ⁺ impurity diffusion region and the p ⁺ impurity diffusion region, it is possible to realize a spin MOSFET in which interface resistance is lowered and spin injection writing is faster. The nMOSFET can be changed to a pMOSFET in the same manner in the embodiments described below.

  In the present embodiment, in order to make the magnetization direction of the free layer 16b of the drain portion 15b the same direction (parallel) as the magnetization of the magnetization fixed layer 18b of the drain portion 15, spin is applied from the drain portion 15b to the source portion 15a through the channel 8. Flow polarized electrons. Further, in order to change the magnetization direction of the free layer 16b of the drain portion 15b to the opposite direction (anti-parallel) to the magnetization of the magnetization fixed layer 18b of the drain portion 15, electrons spin-polarized from the source portion 15a to the drain portion 15b are used. Shed.

  In the case of reading, a current that does not change the magnetization direction of the free layer of the ferromagnetic laminated film of the drain portion 15b is supplied to the spin MOSFET. As a result, a predetermined first voltage is applied to the gate 10 and a current is caused to flow between the source portion 15a and the drain portion 15b via the channel 8, so that the electric resistance between the source portion 15a and the drain portion 15b is reduced. Reading can be performed by measuring. In addition, writing can be performed by applying a predetermined second voltage different from that for reading to the gate 10 and flowing a current between the source portion 15a and the drain portion 15b through the channel 8.

  In the present embodiment, the tunnel barrier layer 14a is provided between the source part 15a and the source region 5a, and the tunnel barrier layer 14b is provided between the drain part 15b and the drain region 5b. A deleted configuration may be used. In this case, Schottky barriers are naturally formed at the interface between the source portion 15a and the source region 5a and at the interface between the drain portion 15b and the drain region 5b. In this case as well, the influence of the leakage magnetic field on the adjacent transistor can be eliminated and shift adjustment can be performed as in the present embodiment.

In the lateral spin MOSFET configured as described above, it has been found that the channel length dependency of the spin diffusion length in the channel region is larger than that of the spin MOSFET using the in-plane magnetization film. A spin MOSFET having a magnetic material having an easy axis of spin in the film surface and a spin MOSFET having a magnetic material having an easy axis in the direction perpendicular to the film surface are prepared, and the spin diffusion length in the channel region is prepared. Measure channel length dependence. Then, as shown in FIG. 6, it can be seen that the spin diffusion length decreases as the channel length decreases. The vertical axis in FIG. 6 represents a signal ΔV _non-local indicating the spin diffusion length. 6 shows the structure of the third embodiment shown in FIG. 3 for the spin MOSFET structure having a perpendicular magnetization film, and the magnetization fixed layer without using a hard bias magnetic field for the spin MOSFET structure having an in-plane magnetization film. The measurement result at the time of setting it as a synthetic pin structure as shown in FIG. 4 is shown. The material and the manufacturing method are the same as those described in Example 1 described later. The reason why the spin diffusion length is shortened is that the leakage magnetic field due to the hard bias film is also applied to the channel region because of the Hanle effect, and the direction of the magnetic field lines due to the leakage magnetic field is substantially the same as the direction of the current (electron flow) flowing through the channel region. It is thought that spin relaxation occurred due to the perpendicularity. The spin diffusion length is obtained when a nonmagnetic ohmic electrode separated by 100 μm is separately provided, the potential of the ohmic electrode is set as a reference potential, and the orientations of the magnetic bodies of the source / drain portions are changed to be parallel or antiparallel to each other. Evaluation is performed by measuring the spin current. As can be seen from FIG. 6, the spin MOSFET having the lateral structure as in the third embodiment has an in-plane magnetization film as long as the channel length (the shortest distance between the source region and the drain region) is 0.25 μm or less. The spin diffusion length is the same as that of the spin MOSFET structure, and spin relaxation in the channel region due to the leakage magnetic field can be suppressed.

(Fourth embodiment)
Next, FIG. 7 shows a cross-sectional view of a spin MOSFET according to a fourth embodiment of the present invention. The spin MOSFET according to the fourth embodiment is the same as the spin MOSFET according to the third embodiment shown in FIG. 3, except that the tunnel barrier layers 14a and 14b are deleted, the source portion 15a is formed on the source region 5a, the free layer 16a, the tunnel is formed. The MTJ has a stacked structure in which the barrier layer 17a and the magnetization fixed layer 18a are stacked in this order.

  Similarly to the spin MOSFET of the third embodiment, the spin MOSFET of the present embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistor and can also perform shift adjustment. Further, by setting the channel length to 0.25 μm or less, spin relaxation in the channel region can be suppressed as in the third embodiment.

  Further, the spin MOSFET of this embodiment is formed so that the film surface area of the ferromagnetic multilayer film of the source portion 15a is larger than the film surface area of the ferromagnetic multilayer film of the drain portion 15b. Thereby, the magnetization direction of the ferromagnetic layer 16a in the source part 15a is not changed by the write current, but the magnetization direction of the ferromagnetic layer 16b in the drain part 15b is variable by the write current. Unlike the present embodiment, the film surface area of the ferromagnetic multilayer film of the source portion 15a may be configured to be smaller than the film surface area of the ferromagnetic multilayer film of the drain portion 15b.

By adopting such a configuration, it is possible to invert only the free layer of the ferromagnetic layer having a small area at the time of spin injection writing. A write current I _c in spin injection writing is given by the following equation.

I _c = 2eαMAT [H _k −H _d ] / (hg) (1)
Here, e is the elementary charge, α is the Gilbert damping parameter, M is the magnetization, A is the area of the film surface of the magnetic recording layer (the smaller free layer), and t is the film of the magnetic recording layer (free layer). Thickness, H _d is a demagnetizing field, H _k is an anisotropy constant, and h is a Planck constant. Further, g is a spin-dependent efficiency g (θ) at the interface between the magnetization fixed layer and the nonmagnetic layer, and is given by the following equation.

g (θ) = [− 4+ (1 + p) ³ (3 + cos θ) / 4p ^3/2 ] ⁻¹ (2)
Here, p is the spin polarization rate, and θ is the angle formed by the magnetizations of the two magnetic layers. That is, the current at which the free layer spins is proportional to the area of the film surface of the ferromagnetic laminated film. In the present embodiment, since it is desired to reverse the spin of the free layer of one of the ferromagnetic laminated films of the source part and the drain part, the area of the film surface of the ferromagnetic laminated film of the source part and the drain part is made different, As a result, the magnetization of the free layer of the ferromagnetic laminated film having the smaller area is always reversed first. The ratio of the area of the film surfaces of the source portion 15a and the drain portion 15b is preferably 1.1 times or more, and more preferably 1.2 times or more, as shown in Examples described later.

  Further, as shown in FIGS. 8A and 8B, when the ferromagnetic laminated film laminated on the source portion 15a and the drain portion 15b is formed in a shape in which one side is axisymmetric and one side is a line asymmetric shape, the spin is further increased. It became clear that the margin at the time of injection writing was widened. 8A shows an example of a line-symmetric shape, and FIG. 8B shows an example of a line-asymmetric shape. However, the shape is not limited to the example shown in FIGS. 8A and 8B, and the shape is line-symmetric. If it is a line asymmetric shape, there is no problem. In this case, it has been clarified that there is no problem if the length ratio of the ferromagnetic laminated film is 1.1 or more. The line-symmetric shape is used for a ferromagnetic laminated film having a small film surface area and used for a ferromagnetic laminated film having a large film surface area.

The spin directions of the ferromagnetic layer in contact with the free layer of the ferromagnetic laminated film having a large area and the nonmagnetic layer (tunnel barrier layer) of the magnetization fixed layer are preferably parallel to each other. As can be seen from the equations (1) and (2), the write current I _c is larger in the parallel case (cos θ = 1) than in the anti-parallel case (cos θ = −1). Therefore, it is difficult to reverse the magnetization as compared with the case where the magnetization directions are antiparallel. The ferromagnetic laminated film having a large area is always directed in the same direction so that writing is not performed when the spin direction of the free layer of the ferromagnetic laminated film having a small area is rewritten. At this time, by making the directions of spins parallel to each other, the resistance of the spin MOSFET of this embodiment can be lowered, and spin injection writing can be performed at a higher speed.

  As described above, in the case of writing, the magnetization direction of the free layer of the ferromagnetic laminated film in which the area of the source part 15a and the drain part 15b is increased is not changed, but the free layer of the ferromagnetic laminated film having a small area. A current for reversing the direction of magnetization is passed through the spin MOSFET. In the case of reading, a current that does not change the magnetization direction of the free layer of the ferromagnetic laminated film of the source unit 15a and the drain unit 15b is supplied to the spin MOSFET. As a result, a predetermined first voltage is applied to the gate 10 and a current is caused to flow between the source portion 15a and the drain portion 15b via the channel 8, so that the electric resistance between the source portion 15a and the drain portion 15b is reduced. Reading can be performed by measuring. In addition, writing can be performed by applying a predetermined second voltage different from that for reading to the gate 10 and flowing a current between the source portion 15a and the drain portion 15b through the channel 8.

  As described above, in the present embodiment, the source part 15a and the drain part 15 have different film surface areas, but the laminated structure is the same, so that the manufacturing cost can be increased. It can be suppressed as much as possible.

  In the present embodiment, Schottky barriers are naturally formed at the interface between the source portion 15a and the source region 5a and at the interface between the drain portion 15b and the drain region 5b. A tunnel barrier layer 14a may be provided between 15a and the source region 5a, and a tunnel barrier layer 14b may be provided between the drain portion 15b and the drain region 5b. When the tunnel barrier layers 14a and 14b are provided, the rate of change in magnetoresistance through the semiconductor increases, and also functions as a diffusion barrier for elements between the semiconductor and the ferromagnetic layer. When a semiconductor and a ferromagnetic layer are directly connected without providing a tunnel barrier layer, if the temperature is raised to 400 ° C. or higher, element diffusion occurs between the semiconductor and the ferromagnetic layer, and spin through the semiconductor. Signals can be significantly degraded.

(Fifth embodiment)
Next, FIG. 9 shows a cross-sectional view of a spin MOSFET according to a fifth embodiment of the present invention. In the spin MOSFET of the fifth embodiment, in the spin MOSFET of the third embodiment shown in FIG. 3, in order to increase the magnitude of the lines of magnetic force applied from the hard bias film 30b, a hard layer is formed on the free layer 16b of the drain portion 15b. The bias film 30b is arranged closer. For this reason, the hard bias films 30a and 30c are also arranged close to the source portion 15a and the gate electrode 10, respectively. In particular, the gate is a hard bias film 30c in which half of the gate electrode 10 shown in the third embodiment is made of a magnetic material. Therefore, the gate has a laminated structure of the gate insulating film 9, the gate electrode 10 provided on the gate insulating film 9, and the hard bias film 30 c provided on the gate electrode 10.

  With this arrangement, not only can the shift of the free layer 16b directly below the magnetization fixed layer be adjusted via the tunnel barrier layer 17b, but also the magnetization arranged on the opposite side of the drain portion 15b with respect to the gate. Since the bias magnetic field is applied in a direction in which the magnetization direction of the fixed layer 15a is more thermally stabilized, the structure is preferable.

  Similarly to the third embodiment, this embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistors and can also perform shift adjustment. Further, by setting the channel length to 0.25 μm or less, spin relaxation in the channel region can be suppressed as in the third embodiment.

(Sixth embodiment)
Next, FIG. 10 shows a cross-sectional view of a spin MOSFET according to a sixth embodiment of the present invention. In the spin MOSFET of the sixth embodiment, in the spin MOSFET of the fourth embodiment shown in FIG. 7, a hard layer is formed on the free layer 16b of the drain portion 15b in order to increase the magnitude of the magnetic lines of force applied from the hard bias film 30b. The bias film 30b is arranged closer. For this reason, the hard bias films 30a and 30c are also arranged close to the source portion 15a and the gate electrode 10, respectively. In particular, the gate is a hard bias film 30c in which half of the gate electrode 10 shown in the second embodiment is made of a magnetic material. Therefore, the gate has a laminated structure of the gate insulating film 9, the gate electrode 10 provided on the gate insulating film 9, and the hard bias film 30 c provided on the gate electrode 10.

  With this arrangement, not only can the shift of the free layer 16b directly below the magnetization fixed layer be adjusted via the tunnel barrier layer 17b, but also the magnetization arranged on the opposite side of the drain portion 15b with respect to the gate. Since the bias magnetic field is applied in the direction in which the magnetization direction of the fixed layer 18a is more thermally stabilized, the structure is preferable.

  Similarly to the fourth embodiment, this embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistor and can also perform shift adjustment. In addition, by setting the channel length to 0.25 μm or less, spin relaxation in the channel region can be suppressed as in the fourth embodiment.

(Seventh embodiment)
Next, FIG. 11 shows a cross-sectional view of a spin MOSFET according to a seventh embodiment of the present invention. In the spin MOSFET of the seventh embodiment, in the spin MOSFET of the fifth embodiment shown in FIG. 9, the magnetization directions of the nonmagnetic metal layers 20a and 20b provided on the source portion 15a and the drain portion 15b are respectively The hard bias films 31a and 31b are provided substantially perpendicular to the film surface. That is, the hard bias films 31a and 31b are provided at the contact positions of the source portion 15a and the drain portion 15b. Note that the magnetization directions of the hard bias films 31a and 31b are opposite (antiparallel) to the hard bias films 30a, 30b, and 30c.

  Similarly to the fifth embodiment, this embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistors and can also perform shift adjustment. In addition, by setting the channel length to 0.25 μm or less, spin relaxation in the channel region can be suppressed as in the fifth embodiment. In addition, since a bias magnetic field is applied in a direction in which the magnetization direction of the magnetization fixed layer 18a disposed on the opposite side to the drain portion 15b with respect to the gate is more thermally stabilized, the structure is preferable.

  Furthermore, in the third to sixth embodiments, Co—Pt, Co—Fe—Pt, CoPd, Co—Fe—Pd, or the like must be used as the material of the hard bias film. The use of the arrangement has an advantage that the material of the hard bias film is not limited. In this embodiment, the hard bias films 30a, 30b, 30c, 31a, and 31b are arranged close to each other. Therefore, if the hard bias films are made harder, the magnetic field lines as shown in FIG. This is because a structure for canceling is made.

(Eighth embodiment)
Next, FIG. 12 shows a cross-sectional view of a spin MOSFET according to an eighth embodiment of the present invention. In the spin MOSFET of the eighth embodiment, in the spin MOSFET of the sixth embodiment shown in FIG. 10, the magnetization directions are respectively on the nonmagnetic metal layers 20a and 20b provided on the source portion 15a and the drain portion 15b. The hard bias films 31a and 31b are provided substantially perpendicular to the film surface. That is, the hard bias films 31a and 31b are provided at the contact positions of the source portion 15a and the drain portion 15b. Note that the magnetization directions of the hard bias films 31a and 31b are opposite (antiparallel) to the hard bias films 30a, 30b, and 30c.

  Similarly to the sixth embodiment, this embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistors and can also perform shift adjustment. Further, by setting the channel length to 0.25 μm or less, the spin relaxation in the channel region can be suppressed as in the sixth embodiment. In addition, since a bias magnetic field is applied in a direction in which the magnetization direction of the magnetization fixed layer 18a disposed on the opposite side to the drain portion 15b with respect to the gate is more thermally stabilized, the structure is preferable.

  Furthermore, in the third to sixth embodiments, Co—Pt, Co—Fe—Pt, CoPd, Co—Fe—Pd, or the like must be used as the material of the hard bias film. When is used, there is an advantage that the material of the hard bias film is not limited. In the present embodiment, the hard bias films 30a, 30b, 30c, 31a, and 31b are arranged close to each other. Therefore, if the hard bias films are not made hard from each other, the lines of magnetic force as shown in FIG. This is because a structure for canceling is made.

(Ninth embodiment)
Next, FIG. 13 shows a cross-sectional view of the spin MOSFET according to the ninth embodiment of the present invention. The spin MOSFET of the ninth embodiment is similar to the spin MOSFET of the fifth embodiment shown in FIG. 9 in order to increase the influence of the magnetic lines of force applied from the hard bias film 30b on the free layer 16b. In order to bring the hard bias film 30b closer to the free layer 16b and to reduce the influence of the magnetic lines of force applied from the hard bias film 30c on the channel region 8, the hard bias film 30c is separated from the channel region 8. ing. That is, the hard bias films 30a and 30b are formed on the nonmagnetic metal films 20a and 20b, and the hard bias film 30c is formed on the gate electrode 10 having a height as in the third embodiment. At this time, the magnetization directions of the hard bias films 30a, 30b, and 30c are substantially parallel to each other and substantially antiparallel to the magnetization direction of the ferromagnetic layer 18b. By adopting such a magnetization arrangement, the magnetization of the ferromagnetic layer 15a can be stabilized in the source portion 15a, and the leakage magnetic field from the ferromagnetic layer 18b to the free layer 16b is reduced in the drain portion 15b. It becomes possible to do. Further, in the channel 8, the influence of the leakage magnetic field from the hard bias films 30a, 30b, 30c can be suppressed. Therefore, the shift of the free layer 16b immediately below the fixed magnetization layer 18b can be adjusted via the tunnel barrier layer 17b, and the magnetization of the fixed magnetization layer 18a disposed on the opposite side of the drain portion 15b with respect to the gate can be adjusted. Since a bias magnetic field is applied in a direction in which the direction is more thermally stabilized, the structure is preferable. In addition, since the influence of the magnetic force lines of the bias film 30c on the channel region 8 is reduced, the adverse effect on the spin-polarized electrons passing through the channel region 8 can be reduced. The hard bias films 30a, 30b, and 30c are processed by CMP or the like so that their upper surfaces are located on the same plane.

  Similarly to the third embodiment, this embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistors and can also perform shift adjustment. In addition, by setting the channel length to 0.25 μm or less, spin relaxation in the channel region can be suppressed as in the fifth embodiment.

  Note that the configuration of the present embodiment may be applied to the seventh to eighth embodiments shown in FIGS. 11 to 12.

(10th Embodiment)
Next, FIG. 14 shows a cross-sectional view of the spin MOSFET according to the tenth embodiment of the present invention. The spin MOSFET according to the tenth embodiment is the same as the spin MOSFET according to the third embodiment shown in FIG. 3 except that the magnetization fixed layer 18a of the source portion 15a includes a magnetization fixed film 18a ₁ , a nonmagnetic film 18a ₂ , and a magnetization fixed film 18a _3. However, the structure is changed to a magnetization fixed layer having a laminated structure laminated in this order. Magnetization fixed layer 18a ₁ and the magnetization fixed layer 18a ₃ is performed substantially perpendicular antiferromagnetic coupling via the nonmagnetic layer 18a ₂ in the direction of magnetization film surface. In the present embodiment, an antiferromagnetic layer 19a is provided between the magnetization fixed layer 18a and the nonmagnetic metal layer 20a of the source portion 15a, and the magnetization fixed layer 18b and the nonmagnetic metal layer 20b of the drain portion 15b. The antiferromagnetic layer 19b is provided between the two. The magnetization direction of the magnetization fixed layer 18a of the source portion 15a is further stabilized by the antiferromagnetic layer 19a, and the magnetization direction of the magnetization fixed layer 18b of the drain portion 15b is further stabilized by the antiferromagnetic layer 19b. . As the non-magnetic film 18a _2, Ru, Rh, Ir, or their alloy is used.

  As described above, the magnetization fixed layer 18a has a laminated structure, and the antiferromagnetic layer is laminated on the magnetization fixed layers 18a and 18b, thereby further stabilizing the magnetization of the magnetization fixed layers 18a and 18b. As the antiferromagnetic layer, PtMn, Ir—Mn, FeMn, Pt—Cr—Mn, Ni—Mn, or the like is preferably used.

  Similarly to the third embodiment, this embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistors and can also perform shift adjustment. Further, by setting the channel length to 0.25 μm or less, spin relaxation in the channel region can be suppressed as in the third embodiment.

  In the present embodiment, the magnetization fixed layer 18b of the drain portion 15b may be replaced with a magnetization fixed layer having a laminated structure including a magnetization fixed film, a nonmagnetic film, and a magnetization fixed film.

(Eleventh embodiment)
Next, FIG. 15 shows a cross-sectional view of the spin MOSFET according to the eleventh embodiment of the present invention. The spin MOSFET according to the eleventh embodiment is the same as the spin MOSFET according to the fourth embodiment shown in FIG. 7, except that the magnetization fixed layer 18a of the source portion 15a includes a magnetization fixed film 18a ₁ , a nonmagnetic film 18a ₂ , and a magnetization fixed film 18a _3. There the magnetization fixed layer 18b of the drain portion 15b with changing the magnetization fixed layer in the laminated structure are laminated in this order, the magnetization fixed layer 18b _1, non-magnetic layer 18b _2, the magnetization fixed layer 18b ₃ are laminated in this order The structure is replaced with a magnetization fixed layer having a laminated structure. Magnetization fixed layer 18a ₁ and the magnetization fixed layer 18a ₃ is performed substantially perpendicular antiferromagnetic coupling via the nonmagnetic layer 18a ₂ in the direction of magnetization film surface. The magnetization fixed film 18b ₁ and the magnetization fixed film 18b ₃ have a magnetization direction substantially perpendicular to the film surface and are antiferromagnetically coupled via the nonmagnetic film 18b ₂ . In the present embodiment, an antiferromagnetic layer 19a is provided between the magnetization fixed layer 18a and the nonmagnetic metal layer 20a of the source portion 15a, and the magnetization fixed layer 18b and the nonmagnetic metal layer 20b of the drain portion 15b. The antiferromagnetic layer 19b is provided between the two. The magnetization direction of the magnetization fixed layer 18a of the source portion 15a is further stabilized by the antiferromagnetic layer 19a, and the magnetization direction of the magnetization fixed layer 18b of the drain portion 15b is further stabilized by the antiferromagnetic layer 19b. . In addition, Ru, Rh, Ir, or these alloys are used as the nonmagnetic films 18a ₂ and 18b ₂ .

  As described above, the magnetization fixed layers 18a and 18b have a stacked structure, and the magnetization of the magnetization fixed layers 18a and 18b is further stabilized by stacking the antiferromagnetic layer on the magnetization fixed layers 18a and 18b. As the antiferromagnetic layer, PtMn, Ir—Mn, FeMn, Pt—Cr—Mn, Ni—Mn, or the like is preferably used.

  Similarly to the fourth embodiment, this embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistor and can also perform shift adjustment. In addition, by setting the channel length to 0.25 μm or less, spin relaxation in the channel region can be suppressed as in the fourth embodiment.

(Twelfth embodiment)
Next, FIG. 16 shows a cross-sectional view of a spin MOSFET according to a twelfth embodiment of the present invention. The spin MOSFET of the twelfth embodiment is the same as the spin MOSFET of the third embodiment shown in FIG. 3, except that a Heusler alloy layer 51a is inserted between the tunnel barrier 14a and the magnetization fixed layer 18a of the source portion 15a, and the tunnel barrier 14b. between insert a Heusler alloy layer 51b ₁ between the free layer 16b, and insert the Heusler alloy layer 51b ₂ between the free layer 16b and the non-magnetic layer 17b, and the non-magnetic layer 17b and the magnetization fixed layer 18b It has become inserted constituting the Heusler alloy layer 51b ₃ in. As the Heusler alloy layer, it is preferable to use a Co-based full Heusler alloy such as Co ₂ FeAl _x Si _1-x or Co ₂ MnSi _x Al _1-x having a high ferromagnetic transition temperature.

  Thus, by inserting the Heusler alloy layer between the tunnel barrier and the perpendicular magnetization layer, and between the perpendicular magnetization layer and the tunnel barrier (nonmagnetic layer) in the layer structure of the perpendicular MTJ, the channel region is obtained. MR value of the vertical MTJ can be improved. By changing the relative film thickness ratio of the Heusler alloy layer and the perpendicular magnetization layer, it is possible to orient the easy magnetization axis direction as a whole. In the present embodiment, the tunnel barriers 14a and 14b may be omitted. The same effect can be obtained even if the Heusler alloy layer is replaced with a CoFeB layer.

  Similarly to the third embodiment, this embodiment can eliminate the influence of the leakage magnetic field on the adjacent transistors and can also perform shift adjustment. Further, by setting the channel length to 0.25 μm or less, spin relaxation in the channel region can be suppressed as in the third embodiment.

  The insertion of the Heusler alloy layer or the CoFeB layer can also be applied to the fourth to eleventh embodiments.

  As described above, when the structure described in the third to twelfth embodiments is used, the shift of the free layer immediately below the magnetization fixed layer can be adjusted via the tunnel barrier, and the structure is arranged on the side opposite to the gate. Since the bias magnetic field is applied in a direction in which the magnetization direction of the magnetization fixed layer is more thermally stabilized, the structure is preferable.

  In the first to twelfth embodiments, the material of the ferromagnetic layer whose easy axis direction of spin is perpendicular to the substrate plane is Fe—Pd, Fe—Pt, Fe—Pd—Pt, Co / It is preferable to further include a Ni laminated film, a Fe / Pd laminated film, and a Fe / Pt laminated film.

  Further, in the spin MOSFET of the first to ninth embodiments or the twelfth embodiment, a ferromagnetic laminated film having a nonmagnetic layer / perpendicular magnetization or an upper portion of at least one ferromagnetic material of the source part and the drain part or By laminating a laminated film made of an antiferromagnetic layer and forming the nonmagnetic layer to be made of Ru, Rh, Ir, or an alloy thereof, the spin of the magnetization fixed layer is more stably fixed, and against heat. The stability of the magnetization fixed layer is increased. Therefore, even when scaling is performed and miniaturization is performed, a smaller spin MOSFET can be manufactured.

  Also, the structure of the free layer (magnetic recording layer) can be a laminated structure of ferromagnetic layer / nonmagnetic layer / ferromagnetic layer. In this case, if Ru, Rh, Ir, or an alloy thereof is used as the nonmagnetic layer, the thermal stability of the free layer is increased and the stability during writing of the easy axis when writing is increased. For this reason, even when scaling is performed and miniaturization is performed, a smaller spin MOSFET can be manufactured.

In the spin MOSFETs of the first to twelfth embodiments, a Si substrate, Ge substrate, SiGe substrate, GaAs substrate, or InGaAs substrate can be used as the semiconductor substrate. Then, a p-n-p junction or an n-p-n junction is formed on these substrates, and a high-concentration p ⁺ region or an interface between the ferromagnet and the semiconductor or the tunnel barrier and the semiconductor and the interface is formed. It is preferable that an n ⁺ region is formed. When this structure is used, the interface resistance between the semiconductor and the tunnel barrier or the Schottky barrier can be reduced, so that a higher-speed spin MOSFET can be realized. In that case, when the semiconductor substrate Ge is used, when n, n + dope is applied to the interface, the interface resistance is reduced by inserting an oxide or nitride such as GeOx or GeNx under the tunnel barrier. Is possible. When the semiconductor substrate GaAs is used, it is preferable to insert InGaAs or the like below the tunnel barrier because the interface resistance can be reduced.

In the first to twelfth embodiments, MgO, SiO ₂ , SiNx, AlOx, AlNx, GeOx, GeNx, GaOx, rare earth oxide, rare earth nitride, or a laminated film thereof can be used as the tunnel barrier.

  The spin MOSFETs according to the first to twelfth embodiments have been described in detail with reference to the drawings. However, the drawings are schematic, and the size of each part, the size ratio between the parts, and the like are actual. Is different. Moreover, even in the case where the same part is inserted between the drawings, there is a part where the dimensions and ratios are different from each other.

In the first to twelfth embodiments, when the electrical conductivity of the magnetic material and the semiconductor are greatly different, there is a problem of conductance mismatch, the spin polarization is saturated, and spin cannot be injected into the semiconductor. In order to solve the problem, it is preferable to implant ions into a semiconductor such as Si, Ge, GaAs, and create a p / n junction as in a normal MOSFET. At that time, it is preferable to implant a particularly high concentration of ions into the magnetic interface of the semiconductor or the tunnel barrier interface and segregate the (n ⁺ or p ⁺ ) ions. Specifically, in an n-type or p-type MOSFET using a Si or Ge semiconductor substrate, B (boron) element ions are implanted as a p-type impurity, and P (phosphorus) or As (as an n-type impurity). Arsenic ion implantation is preferred. In the case of a GaAs substrate, nMOSFET is generally preferable because of its high mobility. In this case, it is common to dope Si. In the n ⁺ impurity region and the p ⁺ impurity region, it is preferable that the acceleration voltage of the element to be ion-implanted is a low acceleration voltage of 20 KeV or less and ion implantation is performed at a high concentration. In the case of a Si substrate, there is no problem because the same element can be used for the n-type impurity region and the n + impurity region. However, in the case of a Ge substrate, when P (phosphorus) or As (arsenic) is used for the n-type impurity region and S (sulfur) is used for the n ⁺ impurity region, the resistance decreases and a high-speed device is obtained. More preferred. After the ion implantation, RTA (Rapid Thermal Annealing) is performed in N ₂ . The temperature of the RTA is 1000 ° C. to 1100 ° C. for the Si substrate, 400 ° C. to 500 ° C. for the Ge substrate, and 300 ° C. to 600 ° C. in As for the GaAs substrate, or film formation. Sometimes a method of growing by doping Si is used. In any case, a good spin MOSFET can be realized, and spin-dependent conduction is also observed.

  Examples of the present invention will be described below.

(Example 1)
As Example 1, the spin MOSFET of the third embodiment shown in FIG. The spin MOSFET of the first embodiment has a configuration in which the areas of the ferromagnetic laminated films of the source portion 15a and the drain portion 15b are changed. Implanted Si is used for the semiconductor substrate. Spin MOSFETs having different areas of the ferromagnetic laminated film of the source part 15a and the drain part 15b are formed as follows. First, as shown in FIG. 17, the source region 5a and the drain region 5b are formed apart from the semiconductor substrate 2, and the gate insulating film 9 is formed on the semiconductor substrate 2 between the source region 5a and the drain region 5b. A gate electrode 10 is formed on the gate insulating film 9. Note that the source region 5a and the drain region 5b may be formed after the gate insulating film 9 and the gate electrode 10 are formed. Thereafter, an interlayer insulating film 130 made of SiO ₂ is deposited so as to cover the gate electrode 10. Subsequently, holes 132 a and 132 b having different areas are opened in the interlayer insulating film 130. Thereafter, a ferromagnetic laminated film is deposited by using high-pressure RF sputtering, and the holes 132a and 132b are embedded. Subsequently, the ferromagnetic laminated film adhering to the upper surface of the interlayer insulating film 130 is removed by using CMP (Chemical Mechanical Polishing). At this time, in this example, the holes in the interlayer insulating film 130 were formed one by one, and different laminated films were formed. This time, in order to perform non-local measurement, the element isolation insulating film formed by the LOCOS (Local Oxidation of Silicon) method of element isolation on one side is fabricated at a position 100 μm away from the element, The n ⁺ regions 7a and 7b / n regions 6a and 6a were fabricated to have a structure extending to ohmic electrodes provided at positions separated by 100 μm. Other gate electrode formation, ion implantation, and RTA treatment are performed in the same manner as a normal MOSFET formation process. Then, as shown in FIG. 17, after the interlayer insulating film 130 is formed, etch back is performed, and after the interlayer insulating film 130 is flattened to some extent, the aspect ratio of the ferromagnetic laminated film of the source portion 15a and the drain portion 15b. Without changing the thickness, a structure in which only the area was changed was produced, and hole filling film formation was performed. After the hole filling film formation, a CMP process is performed. Thereafter, a SiO ₂ film (not shown) is formed, a via is opened, and a wiring is formed so as to fill this via. Before forming the wiring, the area of the source portion 15a and the drain portion 15b is measured by the shape SEM. Regarding the sizes of the holes 132a and 132b of the source part 15a and the drain part 15b, the design sizes of the source part 15a and the drain part 15b are 0.8 μm × 0.8 μm and 0.3 μm × 0.8 μm, respectively. The actual shape of the hole has an elliptical shape. In the present embodiment, the sizes of the holes 132a and 132b of the source portion 15a and the drain portion 15b may be the same.

  The laminated structure of the ferromagnetic laminated films 15a and 15b in this embodiment is as follows.

  The source portion 15a is formed on the Si substrate 2 with a tunnel barrier 14a made of MgO having a thickness of 0.8 nm / a CoFeB layer having a thickness of 2.5 nm and a ferromagnetic layer 18a made of a 20 nm FePd layer / film thickness. A nonmagnetic metal layer 20a made of 50 nm Ta is stacked in this order. Further, the drain portion 15b is formed on the Si substrate 2 with a tunnel barrier 14b made of MgO having a thickness of 0.8 nm / a CoFeB layer having a thickness of 2.5 nm, an FePd layer having a thickness of 10 nm, and a thickness of 2. Free layer 16b composed of 5 nm CoFeB layer / tunnel barrier 17b composed of MgO / CoFeB layer with a film thickness of 2.5 nm and ferromagnetic layer 18b composed of a FePd layer with a film thickness of 20 nm / non-layer composed of Ta with a film thickness of 50 nm The magnetic metal layer 20b has a configuration laminated in this order.

  Thereafter, a wiring layer is provided, and hard bias films 30a, 30b, and 30c are formed at the positions shown in FIG. CoPt is used for the hard bias films 30a, 30b, and 30c.

  Further, as Comparative Example 1, a spin MOSFET sample without the hard bias films 30a, 30b, and 30c in this embodiment is manufactured. After producing the samples of this example and comparative example 1, annealing in a magnetic field is performed at 300 ° C. for 1 hour.

  After that, the gate electrode is turned on, magnetic field writing is performed to realize the antiparallel state and the parallel state of the spin by the difference in coercive force of the source / drain magnetic material, and the resistance change rate reading and the free layer shift amount are observed. do an experiment.

  The obtained results are shown in FIGS. 18 (a) and 18 (b). As shown in FIG. 18B, the shift adjustment can not be performed in the comparative example 1, whereas the shift adjustment can be performed by the hard bias film in the present embodiment as shown in FIG. 18A. I understand that. Further, as described with reference to FIG. 6, samples having different channel lengths are prepared, and the spin diffusion length is evaluated. The evaluation was performed by measuring the quasi-spin current when the orientation of the magnetic materials received by the source / drain portions was either parallel or antiparallel to each other. From this, it can be seen that this example has an effective structure when the channel length is 0.25 μm or less. In addition, the influence of adjacent cells is examined using magnetic field simulation. In the case of the present embodiment, the magnetic layer of the adjacent spin MOSFET on the side where the free layer exists becomes a magnetization fixed layer. As described above, the magnetization fixed layer has a problem because a bias magnetic field is applied in a direction in which spin is more stabilized. It turns out that there is no.

(Example 2)
As Example 2, a sample of a spin MOSFET having a structure using a Ge substrate instead of a Si substrate in the seventh embodiment shown in FIG. The manufacturing method is the same as in Example 1.

  The laminated structures 15a and 15b of the ferromagnetic laminated film of this example are as follows.

  On the Ge substrate, the source portion 15a is a GeOx layer having a thickness of 0.5 nm / a tunnel barrier 14a made of MgO having a thickness of 0.5 nm / a CoFeB layer having a thickness of 2.5 nm and an FePd having a thickness of 20 nm. A ferromagnetic layer 18a made of layers / a nonmagnetic metal layer 20a made of a Ta layer having a thickness of 50 nm is laminated in this order. The drain portion 15b is formed on a Ge substrate with a GeOx layer having a thickness of 0.5 nm / a tunnel barrier 14b made of MgO having a thickness of 0.5 nm / a CoFeB layer having a thickness of 2.5 nm and a thickness of 10 nm. A free layer 16b made of a CoFeB layer having a thickness of 2.5 nm / tunnel barrier 17a made of MgO / a CoFeB layer having a thickness of 2.5 nm and a fixed magnetization layer 18b / made of a FePd layer having a thickness of 20 nm. A nonmagnetic metal layer made of a Ta layer having a thickness of 50 nm is laminated in this order.

  Thereafter, a wiring layer is provided, and hard bias films 30a, 30b, 30c, 31a, and 31b are formed at the positions shown in FIG. CoPt is used as the hard bias film. Further, as Comparative Example 1, a sample without a hard bias film in this example is manufactured. After preparation of the samples of this example and comparative example 1, annealing in a magnetic field is performed at 270 ° C. for 1 hour.

  After that, the gate is turned on, magnetic field writing is performed to realize the antiparallel state and the parallel state of the spin by the difference in coercive force of the magnetic material of the source / drain portion, and the resistance change rate reading and the free layer shift amount are observed. do an experiment.

  The obtained experimental results are shown in FIGS. 19 (a) and 19 (b). As shown in FIG. 19B, the shift adjustment in Comparative Example 1 cannot be performed, whereas in this embodiment, the shift adjustment can be performed by the hard bias film as shown in FIG. 19A. I understand that. From this, it can be seen that the same effect is obtained even if the type of semiconductor is different. The influence of adjacent cells was examined using magnetic field simulation. In this embodiment, the magnetic layer of the adjacent spin MOSFET on the side where the free layer exists becomes a magnetization fixed layer, and there is no problem because the magnetization fixed layer is applied with a bias magnetic field in the direction of stabilizing the spin as described above. I understand that.

(Example 3)
As Example 3, a sample of a spin MOSFET having a structure using a GaAs substrate instead of the Si substrate in the fifth embodiment shown in FIG. The manufacturing method is the same as in Example 1.

  The laminated structure of the ferromagnetic laminated films 15a and 15b in this embodiment is as follows.

  The source portion 15a is a strong layer comprising a 1.5 nm thick InGaAs layer / a 0.7 nm thick GaOx layer / a 2.5 nm thick CoFeB layer and a 20 nm thick FePd layer on a GaAs substrate. The magnetic layer 18a / the nonmagnetic metal layer 20a made of a Ta layer with a film thickness of 50 nm is stacked in this order. In addition, the drain portion 15b is formed on a GaAs substrate with an InGaAs layer having a thickness of 1.5 nm / GaOx layer having a thickness of 0.7 nm / CoFeB layer having a thickness of 2.5 nm, FePd layer having a thickness of 10 nm, Free layer 16b composed of a CoFeB layer with a thickness of 2.5 nm / tunnel barrier 17b composed of MgO with a thickness of 0.8 nm / CoFeB layer with a thickness of 2.5 nm and a fixed magnetization composed of a FePd layer with a thickness of 20 nm Layer 18b / nonmagnetic metal layer 20b made of a Ta layer having a thickness of 50 nm is stacked in this order.

  Thereafter, a wiring layer is provided, and hard bias films 30a, 30b, and 30c are formed at the positions shown in FIG. CoPt is used as the hard bias film. As Comparative Example 1, a sample without a hard bias film in this example is also produced. After preparing the samples of this example and the comparative example, annealing in a magnetic field is performed at 300 ° C. for 1 hour.

  After that, the gate is turned on and magnetic field writing is performed, and the anti-parallel and parallel states of the spin are realized by the coercive force difference of the magnetic material of the source / drain, and the resistance change rate reading and the free layer shift amount are set. Conduct experiments to observe. The experimental results obtained are the same as those of Example 1 and Example 2. From this, it can be seen that the shift adjustment is possible by the hard bias film. From this, it can be seen that the same effect is obtained even if the type of semiconductor is different. In addition, the influence of adjacent cells is examined using magnetic field simulation. In this embodiment, the magnetic layer of the adjacent spin MOSFET on the side where the free layer exists becomes a magnetization fixed layer. As described above, the magnetization fixed layer has a problem because a bias magnetic field is applied in a direction in which spin is more stabilized. I understand that there is no.

Example 4
As Example 4, a spin MOSFET according to the second embodiment shown in FIG. 2 is fabricated on a Si substrate.

In this embodiment, a buried oxide film (BOX) 62 / GOI (Germanium On Insulator) layer 63 / a MgO layer having a film thickness of 0.6 nm, a CoFeB layer having a film thickness of 3 nm, and a film are formed on a (001) Si substrate 61. Laminated film 72 of an underlayer 65 / FePd layer made of a TiN layer having a thickness of 10 nm and a Heusler alloy layer made of Co ₂ FeAl _0.5 Si _0.5 / a tunnel barrier 73 / Ge made of MgO having a thickness of 0.8 nm Channel layer 74 / tunnel barrier 77 made of MgO with a film thickness of 0.8 nm / Heusler alloy layer made of Co ₂ FeAl _0.5 Si _0.5 and a free layer 78 made of FePd layer and CoFeB layer / film thickness of 0. A tunnel barrier 80 / CoFeB layer made of 8 nm MgO and a magnetic laminated film 82 made of a FePt layer are laminated in this order. Ri has a configuration in which the gate insulating film 90a and a gate electrode 76 is formed on the side of the channel layer 74.

Next, the manufacturing method of a present Example is demonstrated. First, UHV-CVD (Ultra-High Vacuum Chemical Vapor Deposition) method, MBE (Molecular Beam Epitaxy) method or LP-CVD (Low Pressure Chemical Vapor Deposition) method is used on an SOI substrate with an SOI layer thickness of 20 nm. Then, a Si _0.9 Ge _0.1 crystal layer is grown to 150 nm and a Si cap layer is grown to 5 nm. At this time, since each film thickness is below the critical film thickness at the growth temperature, dislocation does not occur.

  Next, this wafer is put into an oxidation furnace, and oxidation is performed using an oxygen gas diluted to 50% with nitrogen at a temperature of 1000 ° C. until the SiGe crystal layer becomes 25 nm. By this oxidation, Ge atoms are sufficiently diffused in the crystal layer sandwiched between the buried oxide film (lower layer) and the thermal oxide film (upper layer). However, since no additional oxide film is formed, the thickness of the crystal layer is reduced with the progress of thermal oxidation, and the Ge concentration is increased to 70%. Here, care must be taken that the oxidation temperature does not exceed the melting point of SiGe with concentrated Ge concentration. As in this example, in order to obtain a SiGe layer with a Ge concentration of 70%, the final oxidation temperature must be 1025 ° C. or lower. In order to shorten the oxidation time, it is effective to initially set the temperature higher and lower the temperature gradually or step by step without exceeding the melting point according to the Ge concentration in the SiGe layer. .

  Next, after surface cleaning, an MgO layer having a thickness of 0.6 nm is formed, and a CoFeB layer having a thickness of 3 nm is formed thereon. Then, annealing is performed for crystallization, and then a TiN layer having a thickness of 20 nm is formed. These MgO layer, CoFeB layer, and TiN layer constitute the underlayer 65.

Next, after surface cleaning, a sputtering method is used to form a stacked film 72 of a HePsler alloy layer made of a 20 nm thick FePd layer and a 4 nm thick Co ₂ FeAl _0.5 Si _0.5 film, and MgO. A tunnel barrier 73, a Ge channel layer 74, a tunnel barrier 77 made of MgO, a Heusler alloy layer made of Co ₂ FeAl _0.5 Si _0.5 having a thickness of 3 nm, an FePd layer having a thickness of 10 nm, and a thickness of 2. Free layer 78 made of 5 nm CoFeB layer, tunnel barrier 80 made of MgO with a thickness of 1.0 nm, CoFeB layer with a thickness of 2.5 nm / magnetic layer made of FePt layer with a thickness of 20 nm / film thickness of 0 A magnetic laminated film 82 composed of a .9 nm Ru layer / a 30 nm thick FePt layer and a 100 nm thick Ta layer 84 are laminated in this order.

  In addition to Ge, a III-V group compound semiconductor such as GaAs can be selected as the crystal material of the semiconductor layer 74 to be a channel. Assuming that the underlying crystal is Ge, a III-V group compound semiconductor such as GaAs is a crystal material whose lattice constant is relatively close to the lattice constant of Ge, and is therefore a crystal material that can be stacked without occurrence of dislocations. . It is also possible to improve channel mobility by positively selecting semiconductor crystals having different lattice constants and introducing strain into the channel portion. Of course, SiGe or Si can be selected as the crystal material of the semiconductor layer 74 to be a channel.

  Subsequently, a protective layer such as a deposited oxide film is inserted on the surface, a photoresist pattern is formed, the Ta layer 84 having a film thickness of 100 nm is shaved by RIE, and the upper magnetic layer is formed using this Ta layer 84 as a hard mask. The laminated film and the Ge crystal layer 74 are etched into an island shape using the RIE method. Here, the etching may be stopped when the Ge crystal layer 74 is etched off, the etching of the underlying magnetic layer 72 is completed, and the etching of the underlying layer 65 is slightly started.

Next, a thin insulating layer having a thickness of 2 nm is deposited on the entire surface by a CVD method. Here, SiO ₂ is used. A part of this insulating layer becomes a gate insulating film. As a gate insulating film, not only a Si oxide film (SiO ₂ ) but also a Si nitride film (Si ₃ N ₄ ), a Si oxynitride film (SiO _x N _y ), Al ₂ O ₃ , Ta ₂ O ₅ , TiO ₂ , Ya A high dielectric gate insulating film such as ₂ O ₃ can also be used. In addition to the materials described above, a Ge nitride film can also be used as the gate insulating film. This Ge nitride film can be obtained not only by deposition by CVD but also by nitriding the Ge surface directly using ammonia gas or nitrogen gas.

Thereafter, a polycrystalline Si layer having a thickness of 20 nm to 25 nm is deposited on the entire surface for the gate electrode, and then phosphorus is ion-implanted at a dose of 5 × 10 ¹⁵ cm ⁻² , and further annealed to form a polycrystalline Si layer. A high-concentration n-type layer is formed. Here, there is also a method of adding a dopant simultaneously when depositing polycrystalline Si and creating a low-resistance gate electrode by CVD. Furthermore, a metal-based gate electrode can also be used. This gate electrode has a shape surrounding the channel portion of the vertical transistor. The polycrystalline Si layer stacked on the uppermost source / drain portion is removed by planarization. Thereafter, the polycrystalline Si layer is removed by photolithography, leaving a portion surrounding the gate.

  Finally, lower and upper magnetic layers and openings for polycrystalline Si electrodes are provided, and electrodes are formed to complete the device. After preparing the sample, annealing in a magnetic field is performed at 270 ° C. for 1 hour.

  After that, with the gate turned on, magnetic field writing was performed to realize the antiparallel and parallel states of the spin by the coercivity difference between the source and drain magnetic materials, reading the resistance change rate, and observing the shift amount of the free layer I do. The experimental results obtained can be shifted as in the first to third embodiments. The influence of adjacent cells is examined using magnetic field simulation. In the case of this example, even when the channel length is 20 nm, it is understood that there is no influence on the adjacent cell if the synthetic structure is used for the magnetization fixed layer of the vertical FET structure shown in the first and second embodiments.

  In addition, in the vertical FET structure (Vertical structure), samples whose channel length is changed between 20 nm and 500 nm are prepared, and the output voltage when the spins between the magnetic bodies in these samples are parallel and antiparallel. FIG. 20 shows the channel length dependence of the difference ΔVlocal. FIG. 20 also plots a case where a lateral FET (Lateral structure) when the channel is a Ge layer and an in-plane magnetization film and a perpendicular magnetization film are used as the magnetic material. The magnetic material and its structure are the same as the conditions described in FIG. As can be seen from FIG. 20, since the direction of the leakage magnetic field is parallel to the current progress direction by using the vertical FET structure, spin relaxation due to the Hanle effect is suppressed, and a preferable result is shown.

  Next, an embodiment in which a reconfigurable logic circuit is configured using the spin MOSFETs of the above-described embodiments and examples will be described below.

(13th Embodiment)
Next, a reconfigurable logic circuit according to a thirteenth embodiment of the present invention is described. The reconfigurable logic circuit of this embodiment is a logic circuit configured using the spin MOSFET described in any of the first to twelfth embodiments and Examples 1 to 4.

  First, a simple circuit configuration when actually used in a reconfigurable logic circuit will be described. When actually configuring a reconfigurable logic circuit using a spin MOSFET, it is preferable that the two MOSFETs (MOSFET 1 and MOSFET 2) have a common floating gate.

  If the AND and OR circuits can be produced, all circuits such as a NOR circuit and an exclusive OR circuit can be produced. Therefore, only the AND circuit and the OR circuit are shown in FIG. As shown in the figure, the reconfigurable logic circuit of this embodiment basically includes a gate insulating film 9 and a gate of the spin MOSFET of any of the first to twelfth embodiments and Examples 1 to 4. Two spin MOSFETs 150 and 152 in which a floating gate (not shown) and an interelectrode insulating film are provided between the electrodes 10 are used. The spin MOSFET 150 is a p-type MOSFET, that is, a MOSFET provided in an n-type well region (not shown) of a p-type semiconductor substrate, and the spin MOSFET 152 is an n-type MOSFET, that is, a p-type semiconductor region of the p-type semiconductor substrate 2. It is MOSFET provided in. The floating gates of the MOSFETs 150 and 152 are connected in common, the source of the MOSFET 150 is connected to the power source Vinp, and the source of the MOSFET 152 is grounded. Then, the drain of the MOSFET 150 and the drain of the MOSFET 152 are connected. The output V1 from the commonly connected node is input to the inverter 160, and the output of the inverter 160 is used as the output Vout of the logic circuit of this embodiment.

  Thereby, an AND circuit and an OR circuit can be formed. As shown in FIG. 22, when the floating gate voltage Vfg is ½ of the sum of the gate input A of the MOSFET 150 and the gate input B of the MOSFET 152, the spin moments of the ferromagnetic layers close to the drain and source semiconductor substrate 2 are parallel. The output voltage Y at (P) or antiparallel (AP) changes to “1” or “0”. In the present embodiment, the spin moment of the MOSFET 150 is always parallel.

  In the logic circuit of this embodiment, when the spin moment of the ferromagnetic layer close to the semiconductor substrate 2 of the source and drain of the MOSFET 152 is set to the AP (anti-parallel) state, the values of the inputs A and B of the gate electrodes of the MOSFETs 150 and 152 are set. The corresponding values of the potential Vfg of the floating gate, the potential V1 of the common connection node of the MOSFETs 150 and 152, and the output Vout of the logic circuit are shown in FIG. Further, the potential of the floating gate corresponding to the values of the inputs A and B of the gate electrodes of the MOSFETs 150 and 152 when the spin moment of the ferromagnetic layer close to the semiconductor substrate 2 at the source and drain of the MOSFET 152 is in the P (parallel) state. 24 shows values of Vfg, the potential V1 of the common connection node of the MOSFETs 150 and 152, and the output Vout of the logic circuit. As shown in FIGS. 23 and 24, the drain and source of the MOSFET 152 become an AND circuit when the spin moment of the ferromagnetic layer near the semiconductor substrate 2 is antiparallel, and becomes an OR circuit when parallel. Therefore, by changing the spin moment of the ferromagnetic layer in the drain portion and reprogramming, it is possible to configure without recreating the logic circuit, that is, to obtain a reconfigurable logic circuit.

  In the case of an AND circuit and an OR circuit, all the transistors may be spin MOSFETs, but some normal MOSFETs may be used. As shown in FIG. 25, one of the two transistors (for example, the MOSFET 152) uses the spin MOSFET of any of the first to twelfth embodiments and the first to fourth embodiments, and the other is a normal magnetic material. Even when the pMOSFET 154 that does not use is used, the same result can be obtained by controlling the spin moment of the ferromagnetic layer near the semiconductor substrate 2 of the source and drain of one spin MOSFTE 152 to be parallel and antiparallel.

  In addition, as shown in FIG. 26, by switching the connection of the n-type MOSFET 152 and the p-type MOSFET 150 without using the inverter 160, the spin moments of the ferromagnetic layers near the semiconductor substrate 2 of the source and drain of the p-type MOSFET 150 are made parallel. The same effect can be obtained by controlling the antiparallel.

  When used as the logic circuit, it further includes a gate voltage control circuit for reading information of the spin MOSFET, a sense current control element circuit for controlling the sense current, a write current control circuit, a driver, and a sinker.

  The reconfigurable logic circuit shown in the present embodiment is a specific example, and can be formed by using any one of the spin MOSFETs of the first to twelfth embodiments and the first to fourth embodiments. Such a logic circuit is not limited to the reconfigurable logic circuit of the present embodiment.

  When the spin MOSFET described above is used, a device having a high MR and a low resistance can be realized, and a reconfigurable logic circuit can be realized.

2 semiconductor substrate 3 element region 4 element isolation region 5a source region 5b drain region 6a n-type impurity diffusion region 6b n-type impurity diffusion region 7a n ⁺ -type impurity diffusion region 7b n ⁺ -type impurity diffusion region 8 channel region 9 gate insulating film 10 Gate 12 Gate side wall 14a Tunnel barrier 14b Tunnel barrier 15a Source part 15b Drain part 16a Ferromagnetic layer 16b Ferromagnetic layer 17a Nonmagnetic layer 17b Nonmagnetic layer 18a Ferromagnetic layer 18b Ferromagnetic layer 20a Nonmagnetic metal layer 20b Nonmagnetic metal layer 30a hard bias film 30b hard bias film 30c hard bias film 40a plug 40b plug 42a wiring 42b wiring 60 SOI substrate 61 support substrate 62 buried insulating film 63 SOI layer 65 underlayer 72 ferromagnetic layer 73 tunnel barrier 74 h Channel layer 76 gate electrode 77 tunnel barrier 78 free layer 80 tunnel barrier 82 ferromagnetic layer 84 non-magnetic metal layer 90 insulating film 90a a gate insulating film

Claims (11)

An underlayer having a first region and a second region different from the first region;
A first ferromagnetic layer in which the direction of magnetization provided on the first region of the underlayer is perpendicular to the film surface and invariable;
A semiconductor layer serving as a channel provided on the first ferromagnetic layer;
A second ferromagnetic layer provided on the semiconductor layer and having a magnetization direction perpendicular to the film surface and variable;
A first tunnel barrier provided on the second ferromagnetic layer;
A third ferromagnetic layer provided on the first tunnel barrier, the first ferromagnetic film having a first ferromagnetic film whose magnetization direction is perpendicular to the film surface and unchanged, and is antiparallel to the magnetization direction of the first ferromagnetic layer;
A gate insulating film provided on a side surface of the semiconductor layer;
A gate electrode provided on the second region of the base layer so as to be located on the opposite side of the semiconductor layer with respect to the gate insulating film;
A spin MOSFET comprising:   The third magnetic layer includes a non-magnetic film provided on the first ferromagnetic film, and the first ferromagnetic film provided on the non-magnetic film with a magnetization direction perpendicular to the film surface and unchanged. The spin MOSFET according to claim 1, further comprising a second ferromagnetic film that is antiferromagnetically coupled to the first and second ferromagnetic films. An underlayer having a first region and a second region different from the first region;
A first ferromagnetic layer including a first ferromagnetic film provided on the first region of the underlayer and having a magnetization direction perpendicular to the film surface and unchanged.
A first tunnel barrier provided on the first ferromagnetic layer;
A second ferromagnetic layer provided on the first tunnel barrier and having a magnetization direction perpendicular to the film surface and variable;
A semiconductor layer serving as a channel provided on the second ferromagnetic layer;
A third ferromagnetic layer provided on the semiconductor layer, the magnetization direction of which is perpendicular to the film surface and unchanged and is antiparallel to the magnetization direction of the first ferromagnetic film;
A gate insulating film provided on a side surface of the semiconductor layer;
A gate electrode provided on the second region of the base layer so as to be located on the opposite side of the semiconductor layer with respect to the gate insulating film;
A spin MOSFET comprising:   The first ferromagnetic layer has a nonmagnetic film provided between the first ferromagnetic film and the underlayer, and a magnetization direction provided between the nonmagnetic film and the underlayer. 4. The spin MOSFET according to claim 3, further comprising a second ferromagnetic film that is perpendicular to the film surface and invariant and is antiferromagnetically coupled to the first ferromagnetic film.   5. The spin MOSFET according to claim 1, wherein the underlayer and the semiconductor layer are formed of materials having different lattice constants.   The spin MOSFET according to claim 1, wherein a second tunnel barrier is provided between the semiconductor layer and the first ferromagnetic layer.   The spin MOSFET according to claim 3 or 4, wherein a second tunnel barrier is provided between the semiconductor layer and the third ferromagnetic layer.   The spin MOSFET according to claim 1, wherein a third tunnel barrier is provided between the semiconductor layer and the second ferromagnetic layer.   The first tunnel barrier includes any one of magnesium oxide, silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, germanium oxide, germanium nitride, rare earth oxide, rare earth nitride, or a laminated film thereof. The spin MOSFET according to any one of claims 1 to 8.   Each of the first to third ferromagnetic layers includes any one of an Fe—Pd layer, an Fe—Pt layer, an Fe—Pd—Pt layer, a Co / Ni laminated film, an Fe / Pd laminated film, and an Fe / Pt laminated film. The spin MOSFET according to claim 1, wherein the spin MOSFET is included.   11. A spin MOSFET according to claim 1, comprising two field effect transistors, wherein at least one of the two field effect transistors is provided with a common floating gate. A reconfigurable logic circuit characterized by being configured.

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