JP2011211448A - Solid-state imaging device, and method of driving the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state imaging device that reduces signal charge added to an optical signal based on signal charge stored in a photodiode and noise due to dark current, and a method of driving the same.SOLUTION: A photodiode is reset in other than an exposure period. Reset of photodiodes of all pixels in a predetermined region is canceled simultaneously at the start of the exposure period. A charge retention part is reset in the exposure period, and thereafter a noise component is output from a pixel. Signal charge of the photodiodes of all the pixels in the predetermined region is read simultaneously after the exposure period. A signal component is output from the pixel.

Description

  The present invention relates to a solid-state imaging device such as a digital still camera and a digital video camera using a solid-state imaging device, and a driving method thereof.

  As a signal readout method of a conventional solid-state imaging device (hereinafter referred to as an image sensor), there is a rolling shutter system that sequentially reads out signals by using a row of pixels arranged in a matrix (two-dimensional) as a unit of readout. is there. However, in the rolling shutter system, a driving method is employed in which the signal charge accumulation start and accumulation end timings in the photodiode are different for each row. For this reason, there are cases where the shape of a fast moving subject is distorted and the flicker of a fluorescent lamp appears in the image.

  As a signal readout method for solving this problem, there is a global shutter system in which accumulation of signal charges is started and stopped collectively by photodiodes of all pixels (see, for example, Patent Document 1). Hereinafter, the global shutter method will be described.

  FIG. 4 shows a pixel configuration of the image sensor. The pixel shown in FIG. 4 includes a photodiode PD1, a charge holding unit FD (floating diffusion), a transfer transistor M1, an FD reset transistor M2, an amplification transistor M3, a selection transistor M4, and a PD reset transistor M5. . The PD reset switch line 101, the transfer switch line 102, the FD reset switch line 103, the selection switch line 104, and the signal output line 9 (vertical signal line) are shared among a plurality of pixels.

  The photodiode PD1 is a photoelectric conversion element in which the amount of accumulated signal charge changes according to incident light. The charge holding unit FD is a diffusion floating region having a charge holding function for holding the signal charge transferred from the photodiode PD1. The transfer transistor M1 is a transistor for transferring (reading) the signal charge generated in the photodiode PD1 to the charge holding unit FD. The FD reset transistor M2 is a transistor for resetting the signal charge held in the charge holding unit FD. The amplification transistor M3 is a transistor for amplifying and reading the voltage level of the charge holding unit FD. The selection transistor M4 is a transistor for selecting a specific pixel that outputs the voltage signal of the amplification transistor M3 and transmitting the output of the amplification transistor M3 to the signal output line 9. The PD reset transistor M5 is a transistor for resetting signal charges accumulated in the photodiode PD1. Here, light is shielded except for the photodiode PD1.

  The PD reset switch line 101 is a wiring to which a PD reset pulse φ101 for resetting the signal charge of the photodiode PD1 for one row is applied, and is connected to the gate of the PD reset transistor M5 for one row. The transfer switch line 102 is a wiring to which a transfer pulse φ102 for transferring the signal charge accumulated in the photodiode PD1 of the pixels for one row to the charge holding unit FD of each pixel is applied. It is electrically connected to the gate of the pixel transfer transistor M1. The FD reset switch line 103 is a wiring to which an FD reset pulse φ103 for resetting the charge holding units FD of the pixels for one row is applied, and is connected to the gate of the FD reset transistor M2 for one row. The selection switch line 104 is a wiring to which a selection pulse φ104 for selecting pixels for one row is applied, and is electrically connected to the gate of the selection transistor M4 of the pixels for one row.

  FIG. 5 shows the configuration of a conventional image sensor. The image sensor shown in FIG. 5 includes a pixel 1, a vertical scanning circuit 8, a load current source 10, a readout circuit 11, a horizontal selection switch 12, a horizontal scanning circuit 13, an output amplifier 14, and an AD converter 15. The frame memory 16 and various wirings are included.

  The configuration of the pixel 1 is as shown in FIG. In FIG. 5, the pixels 1 are arranged in 2 rows and 2 columns, but the pixel arrangement is not limited to that shown in FIG. The vertical scanning circuit 8 performs drive control of the pixels 1 in units of rows. In particular, the vertical scanning circuit 8 performs reset by the PD reset transistor M5 outside the exposure period, and simultaneously cancels reset by the PD reset transistor M5 of all pixels in a predetermined area at the start of the exposure period, thereby reducing the signal charge of the photodiode PD1. Accumulation is started, and global shutter control is performed to simultaneously read out the signal charges of the photodiode PD1 by the transfer transistors M1 of all pixels in a predetermined region after the exposure period ends.

  The load current source 10 is connected to the signal output line 9 and supplies a bias current. The readout circuit 11 is an optical signal based on the noise component output from the pixel 1 (the reset signal component when the signal charge held in the charge holding unit FD is reset) and the signal component (the signal charge accumulated in the photodiode PD1). A predetermined process is performed on the sum of the component and the reset signal component. The horizontal selection switch 12 is an on / off switch, and controls the output of a noise component (reset signal) and a signal component to the common signal output line 17 (horizontal signal line).

  The horizontal scanning circuit 13 outputs drive pulses φ105_1 and φ105_2 to the horizontal selection switch 12, and controls the horizontal selection switch 12 to control the output of noise components and signal components to the common signal output line 17. The output amplifier 14 amplifies the noise component and the signal component output to the common signal output line 17. The AD converter 15 converts the noise component and the signal component output from the output amplifier 14 into a digital signal. The frame memory 16 stores the digital signal output from the AD converter 15 in units of frames.

  Hereinafter, the operation of the global shutter method according to Patent Document 1 will be described with reference to FIG. FIG. 6 is a timing chart obtained by extracting a part of the drive sequence from the continuous drive sequence in which the predetermined operation is continuously repeated. In FIG. 6, when distinguishing pulses for each row, “_ *” (* is a row number) is added to the end of the pulse code.

  First, prior to reading, the vertical scanning circuit 8 sets the PD reset pulse φ101 of all rows to the high level, the transfer pulse φ102 of all rows to the low level, and the FD reset pulse φ103 of all rows to the high level. As a result, the PD reset transistor M5 and the FD reset transistor M2 are turned on, and the transfer transistor M1 is turned off. For this reason, the photodiode PD1 and the charge holding unit FD of all the pixels are reset.

  Subsequently, at the time t1, the vertical scanning circuit 8 sets the FD reset pulse φ103 of all rows to the low level, and turns off the FD reset transistor M2. As a result, the charge holding unit FD enters a floating state. Further, the vertical scanning circuit 8 sets the selection pulse φ104_1 in the first row to the high level. As a result, the selection transistor M4 in the first row is turned on to perform row selection, and a noise component including fixed noise such as reset noise and threshold voltage variation of the amplification transistor M3 is read out to the readout circuit 11.

  Subsequently, the drive pulses φ105_1 and 105_2 from the horizontal scanning circuit 13 are sequentially set to a high level, and the horizontal selection switch 12 is sequentially turned on, so that a noise component is output via the common signal output line 17 and the output amplifier 14. The output noise component is AD converted by the AD converter 15 and held in the frame memory 16. Similarly for the second and subsequent rows, the noise components are read out for each row, and the noise components for all the pixels are held in the frame memory 16.

  Subsequently, at time t2, the vertical scanning circuit 8 sets the PD reset pulse φ101 of all the rows to the low level, and turns off the PD reset transistor M5. As a result, accumulation of signal charges photoelectrically converted in the photodiode PD1 is started. When an arbitrary accumulation time elapses, the vertical scanning circuit 8 sets the transfer pulse φ102 of all rows to a high level and turns on the transfer transistor M1. As a result, the signal charge accumulated in the photodiode PD1 is transferred to the charge holding unit FD (time t3). Further, the vertical scanning circuit 8 sets the PD reset pulse φ101 of all rows to the high level and turns on the PD reset transistor M5. As a result, the photodiodes PD1 of all the pixels are reset.

  Subsequently, the vertical scanning circuit 8 selects the row by setting the selection pulse φ104_1 of the first row to the high level at time t4, similarly to the reading of the noise component. As a result, a signal component which is the sum of the noise component described above and the optical signal component based on the signal charge accumulated in the photodiode PD1 is read out to the readout circuit 11. After the signal component is read, the vertical scanning circuit 8 sets the FD reset pulse φ103 in the first row to the high level and turns on the FD reset transistor M2. As a result, the charge holding unit FD is reset.

  Subsequently, when the drive pulses 105_1 and 105_2 from the horizontal scanning circuit 13 are sequentially set to a high level and the horizontal selection switch 12 is sequentially turned on, the signal component in the first row is passed through the common signal output line 17 and the output amplifier 14. Read sequentially. The read signal component is AD-converted by the AD converter 15, and by taking the difference from the noise component in the first row held in the frame memory 16, the noise component is removed and only the optical signal component is extracted. . The same operation is performed for the second and subsequent rows, and an image signal with a high S / N is obtained. In live view display in which image signals are acquired in successive frames and a moving image is displayed on a liquid crystal monitor or the like, the above-described series of operations is repeated.

  FIG. 7 is a timing chart simply showing the acquisition timing of the noise component and signal component of the conventional example. The vertical synchronization signal VD, the reset timing of the photodiodes PD1 for all rows, and the readout timing of the noise component and signal component for each row by turning on the selection transistor M4 are shown. As can be seen from FIG. 7, the exposure period for accumulating the signal charge in the photodiode PD1 is from the end of the readout of the noise component to the start of the readout of the signal component.

JP 2005-65184 A

  As described above, in the image sensor having the global shutter function, the signal charge accumulated in the photodiode is transferred to the charge holding unit all at once, and the signal charge is sequentially read from the charge holding unit. Done. Therefore, the signal charge is temporarily held in the charge holding unit until the signal charge is read. However, when the image sensor is irradiated with strong light, the signal charge generated in the silicon substrate constituting the pixel leaks into the charge holding portion and may cause noise, thereby deteriorating the image quality. Particularly in long-second exposure photography (bulb photography), the time from the reset of the charge holding unit before the start of the exposure period to the transfer of signal charge from the photodiode to the charge holding unit after the end of the exposure period In addition to the influence of the noise, dark current generated in the charge holding unit is also added to the noise, and the total noise becomes very large. For this reason, even if the difference between the noise component and the signal component that is the sum of the noise component and the optical signal component is taken, the noise component due to the signal charge and dark current leaking into the charge holding unit cannot be removed.

  The present invention has been made in view of the above-described problem, and is a solid-state imaging device capable of reducing noise caused by signal charge and dark current added to an optical signal based on signal charge accumulated in a photodiode, and the same An object is to provide a driving method.

  The present invention has been made in order to solve the above-described problem. A photoelectric conversion unit that converts incident light into signal charges and stores the signals, and a first signal charge that is stored in the photoelectric conversion units is reset. A reset unit; a read unit that reads out the signal charge from the photoelectric conversion unit; a charge holding unit that holds the signal charge read through the read unit; and the signal charge held in the charge holding unit is amplified And an amplifying unit, a second reset unit that resets the signal charge held in the charge holding unit, and a selection unit that selects a specific pixel are two-dimensionally arranged, and an exposure period The first reset unit is reset to the outside, and the reset by the first reset unit of all pixels in the predetermined region is simultaneously canceled at the start of the exposure period, and the predetermined region is completed after the exposure period ends. A method of driving a solid-state imaging device that causes the readout unit of all pixels to simultaneously read out the signal charge, the first step of causing the second reset unit to reset in the exposure period, and the exposure period The second step of outputting the output of the amplification unit from the pixel after the reset by the second reset unit, and the signal charge read by the readout unit after the exposure period ends And a third step of outputting the output of the amplifying unit from the pixel.

  In the driving method of the solid-state imaging device according to the present invention, the timing at which the operation of the first step is performed is immediately before the end of the exposure period.

  In the driving method of the solid-state imaging device according to the present invention, the operation of the first step is performed after an instruction to end the exposure period is input from the outside during the bulb exposure period. .

  In the solid-state imaging device driving method of the present invention, the operations of the first step and the second step are performed a plurality of times during the bulb exposure period.

  In addition, the present invention provides a photoelectric conversion unit that converts incident light into signal charge and stores the signal, a first reset unit that resets the signal charge stored in the photoelectric conversion unit, and the signal from the photoelectric conversion unit. A reading unit that reads out charges, a charge holding unit that holds the signal charges read through the reading unit, an amplification unit that amplifies the signal charges held in the charge holding unit, and held in the charge holding unit A second reset unit that resets the signal charge that has been generated; a selection unit that selects a specific pixel; and a pixel that is arranged in a two-dimensional manner, and is reset to the first reset unit outside an exposure period At the start of the exposure period, simultaneously cancel the reset by the first reset unit of all pixels in a predetermined area, and cause the second reset unit to perform reset in the exposure period, After the reset by the reset unit, the output of the amplifying unit is output from the pixel, and after the exposure period, the signal charges are simultaneously read by the reading units of all the pixels in the predetermined region, and read by the reading unit. And a control unit that outputs from the pixel the output of the amplification unit based on the output signal charge.

  According to the present invention, by causing the second reset unit to reset during the exposure period, the output of the amplifying unit based on the signal charge read by the reading unit is output from the pixel from the reset timing of the charge holding unit. This makes it possible to shorten the time until completion. For this reason, noise due to the signal charge and dark current added to the optical signal based on the signal charge accumulated in the photoelectric conversion unit can be reduced.

It is a timing chart which shows operation | movement of the solid-state image sensor by one Embodiment of this invention. It is a timing chart which shows operation | movement of the solid-state image sensor by one Embodiment of this invention. It is a timing chart which shows operation | movement of the solid-state image sensor by one Embodiment of this invention. It is a circuit diagram which shows the structure of a pixel. It is a block diagram which shows the structure of the conventional solid-state image sensor. It is a timing chart which shows operation | movement of the conventional solid-state image sensor. It is a timing chart which shows operation | movement of the conventional solid-state image sensor.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
First, a first embodiment of the present invention will be described. The configuration of the image sensor according to the present embodiment is the same as the configuration shown in FIG. 5, and the configuration of the pixels is the same as the configuration shown in FIG. In this embodiment, three kinds of operation examples will be described. Below, it demonstrates centering on operation | movement different from a prior art example.

<First operation example>
FIG. 1 is a timing chart simply showing acquisition timings of noise components and signal components according to the first operation example. The vertical synchronization signal VD, the reset timing of the photodiodes PD1 for all rows, the reset timing of the charge holding units FD for all rows, and the readout timing of noise components and signal components for each row by turning on the selection transistor M4 It is shown.

  Prior to the start of the exposure period, the vertical scanning circuit 8 sets the PD reset pulse φ101 of all rows to a high level and turns on the PD reset transistor M5. As a result, the photodiodes PD1 of all the pixels are reset (collective reset). Further, the vertical scanning circuit 8 sets the FD reset pulse φ103 of all rows to the low level, and turns off the FD reset transistor M2. As a result, the charge holding unit FD enters a floating state.

  Subsequently, at the start of the exposure period, the vertical scanning circuit 8 sets the PD reset pulse φ101 of all rows to the low level, and turns off the PD reset transistor M5. As a result, accumulation of signal charges photoelectrically converted in the photodiode PD1 is started.

  Subsequently, in the exposure period, the vertical scanning circuit 8 sets the FD reset pulse φ103 of all rows to the high level and turns on the FD reset transistor M2. As a result, the charge holding unit FD is reset. Subsequently, the vertical scanning circuit 8 sets the FD reset pulse φ103 of all rows to the low level, and turns off the FD reset transistor M2. As a result, the charge holding unit FD enters a floating state. Further, the vertical scanning circuit 8 sets the selection pulse φ104_1 in the first row to the high level. As a result, the selection transistor M4 in the first row is turned on to perform row selection, and a noise component including fixed noise such as reset noise and threshold voltage variation of the amplification transistor M3 is read out to the readout circuit 11. Thereafter, similar to the above-described operation, the noise component is read for each row, and finally the noise components for all the pixels are held in the frame memory 16.

  Subsequently, at the end of the exposure period, the vertical scanning circuit 8 sets the transfer pulse φ102 of all the rows to the high level and turns on the transfer transistor M1. As a result, the signal charge accumulated in the photodiode PD1 is transferred to the charge holding unit FD (collective transfer). Further, the vertical scanning circuit 8 sets the PD reset pulse φ101 of all rows to the high level and turns on the PD reset transistor M5. As a result, the photodiodes PD1 of all the pixels are reset.

  Subsequently, the vertical scanning circuit 8 performs row selection by setting the selection pulse φ104_1 of the first row to the high level. As a result, a signal component which is the sum of the noise component described above and the optical signal component based on the signal charge accumulated in the photodiode PD1 is read out to the readout circuit 11. After this, as in the operation described above, the signal component is read for each row, and finally the noise component is removed by taking the difference from the noise component of each row held in the frame memory 16, Only the optical signal component is extracted.

  In the first operation example, it is assumed that the exposure period is known in advance before the start of photographing. Further, the time required for reading out noise components in all rows is known in advance. For this reason, the reset timing of the charge holding unit FD and the readout timing of the noise component are set so that the readout of the noise component can be completed by the end of the exposure period. This timing is more preferably at least the latter half of the period obtained by dividing the exposure period into two equal parts, and more preferably, the timing of reading the noise component in the last row is immediately before the end of the exposure period.

  In the conventional example, the charge holding unit FD was reset before the start of the exposure period, and the noise component was read out, so the signal charge was transferred from the photodiode PD1 to the charge holding unit FD after the exposure period ended. Signal charges generated in the silicon substrate leak into the charge holding unit FD and dark current is generated in the charge holding unit FD. Since noise due to these is added to the signal component, even if the difference between the signal component and the noise component is taken, the noise component due to the signal charge and dark current leaking into the charge holding portion cannot be removed.

  On the other hand, in the first operation example, the charge holding unit FD is reset during the exposure period and the noise component is read out, so that it is possible to shorten the time from reading out the noise component to reading out the signal component. Become. For this reason, it is possible to reduce noise caused by the signal charge and dark current leaking into the charge holding unit FD, which is added to the optical signal component based on the signal charge accumulated in the photodiode PD1. Furthermore, the noise can be further reduced by making the timing of reading the noise component in the last row immediately before the end of the exposure period.

  As an example of applying the above driving method, there is a case where the dark current is increased as in the case of shooting by long-second exposure (bulb shooting). In this case, since the shutter time is known before the start of photographing, when the shutter time is longer than a preset time, the timing for acquiring the noise component may be changed immediately before the end of the exposure period. Further, the temperature in the image sensor or the camera may be monitored, and the driving method may be switched to the above-described driving method when the dark current is high. Further, in the first operation example, the readout of the noise component in the conventional example is not performed before the start of the exposure period, but may be performed. However, the noise component read out during the exposure period is used to obtain a difference from the signal component.

<Second operation example>
FIG. 2 is a timing chart simply showing the acquisition timing of the noise component and the signal component according to the second operation example. The vertical synchronization signal VD, the reset timing of the photodiodes PD1 for all rows, the reset timing of the charge holding units FD for all rows, and the readout timing of noise components and signal components for each row by turning on the selection transistor M4 It is shown.

  Hereinafter, only different portions from the first operation example will be described. When an instruction to end the exposure is input from the outside after the start of the exposure period, the vertical scanning circuit 8 sets the FD reset pulse φ103 of all rows to the high level and turns on the FD reset transistor M2. As a result, the charge holding unit FD is reset. Subsequently, the vertical scanning circuit 8 sets the FD reset pulse φ103 of all rows to the low level, and turns off the FD reset transistor M2. As a result, the charge holding unit FD enters a floating state. Thereafter, similar to the above-described operation, the noise component is read for each row, and finally the noise components for all the pixels are held in the frame memory 16.

  Subsequently, at the end of the exposure period, the vertical scanning circuit 8 sets the transfer pulse φ102 of all the rows to the high level and turns on the transfer transistor M1. As a result, the signal charge accumulated in the photodiode PD1 is transferred to the charge holding unit FD (collective transfer). Further, the vertical scanning circuit 8 sets the PD reset pulse φ101 of all rows to the high level and turns on the PD reset transistor M5. As a result, the photodiodes PD1 of all the pixels are reset. After this, as in the operation described above, the signal component is read for each row, and finally the noise component is removed by taking the difference from the noise component of each row held in the frame memory 16, Only the optical signal component is extracted.

  When the timing at which the exposure period ends is unknown as in bulb photography, the noise component cannot be acquired immediately before the end of the known exposure period as in the first operation example. For this reason, in the second operation example, a noise component readout operation is performed using an instruction indicating the end of the exposure period as a trigger. Although the time required for the noise component readout operation is added to the exposure period, it can be assumed that the exposure period is long in bulb photography, so the time required for the noise component readout operation (several tens of ms) has a significant effect on image quality. Absent.

  As described above, when the instruction indicating the end of the exposure period is input from the outside, the charge holding unit FD is reset and the noise component is read out, so that the time from reading the noise component to reading the signal component is shortened. It becomes possible. For this reason, even when the exposure period is unknown at the start of shooting, noise due to signal charge and dark current leaking into the charge holding unit FD added to the optical signal component based on the signal charge accumulated in the photodiode PD1 is reduced. be able to.

  Further, in the second operation example, the noise component readout in the conventional example is not performed before the start of the exposure period, but may be performed. However, the noise component read out during the exposure period is used to obtain a difference from the signal component.

  <Third operation example>

  FIG. 3 is a timing chart simply showing the acquisition timing of the noise component and the signal component according to the third operation example. The vertical synchronization signal VD, the reset timing of the photodiodes PD1 for all rows, the reset timing of the charge holding units FD for all rows, and the readout timing of noise components and signal components for each row by turning on the selection transistor M4 It is shown.

  Hereinafter, only different portions from the first operation example and the second operation example will be described. When the timing at which the exposure period ends is unknown as in bulb photography, the noise component cannot be acquired immediately before the end of the known exposure period as in the first operation example. In the third operation example, in order to make the exposure end timing more accurate than in the second operation example, the reset of the charge holding unit FD and the readout of the noise component are performed at an arbitrary interval during the exposure period. For example, in FIG. 3, the noise component is read out three times at an arbitrary interval during one shooting, and then the signal component is read out after the exposure is completed. In this case, the noise component acquired immediately before the end of the exposure period is used for difference processing with the signal component.

  In this way, in the exposure period, resetting the charge holding unit FD and reading out the noise component multiple times at an arbitrary interval, and using the noise component acquired immediately before the end of the exposure period for differential processing with the signal component, Even when the exposure period is unknown at the start of shooting, noise caused by signal charge and dark current leaking into the charge holding unit FD added to the optical signal component based on the signal charge accumulated in the photodiode PD1 can be reduced. In addition, the exposure end timing can be made more accurate.

  As described above, the embodiments of the present invention have been described in detail with reference to the drawings. However, the specific configuration is not limited to the above-described embodiments, and includes design changes and the like without departing from the gist of the present invention. .

  DESCRIPTION OF SYMBOLS 1 ... Pixel, 8 ... Vertical scanning circuit (control part), 10 ... Load current source, 11 ... Reading circuit, 12 ... Horizontal selection switch, 13 ... Horizontal scanning circuit, 14 ... Output amplifier, 15 ... AD converter, 16 ... Frame memory, M1 ... Transfer transistor (readout unit), M2 ... FD reset transistor (second reset unit), M3 ... Amplification transistor (amplification unit), M4 ... selection transistor (selection unit), M5 ... PD reset transistor (first reset unit), PD1 ... photodiode (photoelectric conversion unit)

Claims (5)

A photoelectric conversion unit that converts incident light into signal charges and accumulates them; and
A first reset unit that resets signal charges accumulated in the photoelectric conversion unit;
A readout unit for reading out the signal charges from the photoelectric conversion unit;
A charge holding unit for holding the signal charge read through the reading unit;
An amplifying unit for amplifying the signal charge held in the charge holding unit;
A second reset unit that resets the signal charge held in the charge holding unit;
A selection unit for selecting a specific pixel;
Are arranged in a two-dimensional manner, causing the first reset unit to reset outside the exposure period, and simultaneously resetting all pixels in a predetermined area by the first reset unit at the start of the exposure period A solid-state imaging device driving method that releases the signal charge simultaneously to the readout unit of all pixels in the predetermined area after the exposure period ends,
A first step of causing the second reset unit to perform a reset in the exposure period;
A second step of outputting the output of the amplification unit from the pixel after reset by the second reset unit in the exposure period;
A third step of outputting from the pixel the output of the amplifying unit based on the signal charge read by the reading unit after the end of the exposure period;
A method for driving a solid-state imaging device, comprising:   The method for driving a solid-state imaging device according to claim 1, wherein the operation of the first step is performed immediately before the exposure period ends.   2. The driving method of the solid-state imaging device according to claim 1, wherein the operation of the first step is performed after an instruction to end the exposure period is input from the outside during an exposure period of bulb photography.   2. The driving method of the solid-state imaging device according to claim 1, wherein the operations of the first step and the second step are performed a plurality of times during an exposure period of bulb photography. A photoelectric conversion unit that converts incident light into signal charges and accumulates them; and
A first reset unit that resets signal charges accumulated in the photoelectric conversion unit;
A readout unit for reading out the signal charges from the photoelectric conversion unit;
A charge holding unit for holding the signal charge read through the reading unit;
An amplifying unit for amplifying the signal charge held in the charge holding unit;
A second reset unit that resets the signal charge held in the charge holding unit;
A selection unit for selecting a specific pixel;
Comprising two-dimensionally arranged pixels;
The first reset unit is reset outside the exposure period, and the reset by the first reset unit of all pixels in a predetermined area is simultaneously canceled at the start of the exposure period, and the second reset is performed in the exposure period. The reset unit is reset, and after the reset by the second reset unit, the output of the amplifying unit is output from the pixel, and the signal is simultaneously transmitted to the readout units of all the pixels in the predetermined region after the exposure period ends. A control unit for reading out charges and outputting an output of the amplification unit based on the signal charges read out by the reading unit from a pixel;
A solid-state imaging device.

Images