JP2011208168A - Method for manufacturing sputtering target - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000005477 sputtering target Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title abstract description 5
- 239000000843 powder Substances 0.000 claims abstract description 46
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 23
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 20
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 20
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 11
- 238000007731 hot pressing Methods 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims description 14
- 239000011812 mixed powder Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 abstract description 15
- 229910000905 alloy phase Inorganic materials 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 8
- 238000003754 machining Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910002056 binary alloy Inorganic materials 0.000 description 4
- 229910002058 ternary alloy Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Abstract
Description
本発明は、ハードディスクの高密度磁気記録媒体に適用される磁気記録膜等を形成するためのスパッタリングターゲットの製造方法に関するものである。 The present invention relates to a method for manufacturing a sputtering target for forming a magnetic recording film or the like applied to a high-density magnetic recording medium of a hard disk.
ハードディスク装置は、一般にコンピューターやデジタル家電等の外部記録装置として用いられており、記録密度の一層の向上が求められている。そのため、近年、従来のグラニュラー構造の磁気記録膜を大幅に超える記録密度が得られるビットパターンドメディアと呼ばれる記録媒体技術が検討されている。このビットパターンドメディアは、ナノスケールの微細な磁性体ドットを複数配置することで高密度化を図るものである。 The hard disk device is generally used as an external recording device such as a computer or a digital home appliance, and further improvement in recording density is required. Therefore, in recent years, a recording medium technique called a bit patterned medium that can obtain a recording density that greatly exceeds the magnetic recording film having a conventional granular structure has been studied. This bit patterned media is intended to increase the density by arranging a plurality of nanoscale fine magnetic dots.
このビットパターンドメディアにおける磁性層として種々の材料が検討されているが、そのうちの一つとして例えばＣｏ、Ｔａおよび希土類金属を含有する膜が検討されている。この膜を形成するためのスパッタリングターゲットとして、例えば特許文献１には、複数の金属材料の組み合わせが記載されている中の一つとしてＣｏ、Ｔａおよび希土類金属を含有するターゲットが提案されている。 Various materials have been studied as the magnetic layer in the bit patterned media. As one of the materials, for example, a film containing Co, Ta, and a rare earth metal has been studied. As a sputtering target for forming this film, for example, Patent Document 1 proposes a target containing Co, Ta, and a rare earth metal as one of the combinations of a plurality of metal materials.
上記従来の技術には、以下の課題が残されている。
すなわち、Ｃｏ、Ｔａおよび希土類金属を含有するターゲットを作製するには、ＣｏとＴａと希土類金属との３元系合金粉末を成型して焼結させる方法が考えられるが、この製法であると、密度が低く、機械加工ができる程度まで密度を上げることが困難という不都合があった。なお、上記特許文献１には、ターゲットを形成するための具体的な製造方法について特に記載が無い。
The following problems remain in the conventional technology.
That is, in order to produce a target containing Co, Ta, and rare earth metal, a method of molding and sintering a ternary alloy powder of Co, Ta, and rare earth metal can be considered. There is a disadvantage that the density is low and it is difficult to increase the density to such an extent that machining can be performed. Note that Patent Document 1 does not particularly describe a specific manufacturing method for forming a target.
本発明は、前述の課題に鑑みてなされたもので、ターゲット材の密度を向上させることにより機械加工における割れを防止することができるＣｏ、Ｔａおよび希土類金属を含有する膜を形成するためのスパッタリングターゲットの製造方法を提供することを目的とする。 The present invention has been made in view of the above-described problems. Sputtering for forming a film containing Co, Ta, and a rare earth metal capable of preventing cracking in machining by improving the density of a target material. It aims at providing the manufacturing method of a target.
本発明者らは、Ｃｏ、Ｔａおよび希土類金属を含有する膜を形成するためのスパッタリングターゲットの製造方法について研究を進めたところ、３元系合金粉末ではなく、Ｃｏと希土類金属との２元系合金粉末と、単体金属のＴａ粉末と、の混合粉末を用いることで、高密度なターゲットを形成することができることを突き止めた。 The inventors of the present invention have made researches on a method of manufacturing a sputtering target for forming a film containing Co, Ta, and a rare earth metal. As a result, the binary system of Co and rare earth metal is used instead of the ternary alloy powder. It was found that a high-density target can be formed by using a mixed powder of an alloy powder and a single metal Ta powder.
したがって、本発明は、上記知見から得られたものであり、前記課題を解決するために以下の構成を採用した。すなわち、本発明のスパッタリングターゲットの製造方法は、希土類金属をＲとしてＲ：５〜１０原子％、Ｔａ：５〜１０原子％を含有し、残部：Ｃｏおよび不可避不純物からなるターゲット組成となる割合で、ＣｏとＲとの合金粉末であるＲ−Ｃｏ合金粉と、Ｔａ粉と、の混合粉末を作製する工程と、該混合粉末を真空または不活性ガス雰囲気中でホットプレスする工程と、を有していることを特徴とする。 Therefore, the present invention has been obtained from the above findings, and the following configuration has been adopted in order to solve the above problems. That is, the method for producing a sputtering target of the present invention contains a rare earth metal as R, R: 5 to 10 atomic%, Ta: 5 to 10 atomic%, and the balance: a target composition composed of Co and inevitable impurities. And a step of producing a mixed powder of R—Co alloy powder, which is an alloy powder of Co and R, and Ta powder, and a step of hot pressing the mixed powder in a vacuum or an inert gas atmosphere. It is characterized by that.
このスパッタリングターゲットの製造方法では、希土類金属をＲとすると、２元系合金のＲ−Ｃｏ合金粉と、単体金属のＴａ粉と、の混合粉末をホットプレスすると、Ｒ−Ｃｏ合金中のＣｏが、ホットプレス中にＲ−Ｃｏ合金粉表面に拡散し、隣接するＴａと反応し、ＣｏＴａ合金相が形成され、作製されたターゲットの組織が、Ｒ−Ｃｏ合金相、ＣｏＴａ合金相およびＣｏＴａ合金相で被覆された部分的に未反応のＴａ単体相の３相で構成される。したがって、Ｒ−Ｃｏ合金相とＴａ単体相との間にＣｏＴａ合金相が介在することで、空孔やパーティクルが生じ難くなると共に割れ難く、機械加工ができる程度まで密度を向上させることができる。 In this sputtering target manufacturing method, when R is a rare earth metal, hot pressing a mixed powder of an R—Co alloy powder of a binary alloy and a Ta metal of a single metal, Co in the R—Co alloy is reduced. , Diffuses on the surface of the R-Co alloy powder during hot pressing, reacts with adjacent Ta to form a CoTa alloy phase, and the structure of the prepared target is R-Co alloy phase, CoTa alloy phase and CoTa alloy phase It consists of three phases of a partially unreacted Ta single phase coated with. Therefore, by interposing the CoTa alloy phase between the R—Co alloy phase and the Ta simple substance phase, it is difficult to generate vacancies and particles, and it is difficult to break, and the density can be improved to such an extent that machining can be performed.
なお、作製するターゲット組成における希土類金属Ｒの含有量を上記範囲に設定した理由は、５原子％未満であると、充分なＰＴＦ（漏れ磁束密度）が得られず、１０原子％を超えると、ターゲットの耐食性に問題が生じるおそれがあるためである。
また、作製するターゲット組成におけるＴａの含有量を上記範囲に設定した理由は、５原子％未満の場合および１０原子％を超える場合、充分な密度が得られず、材質的に脆くなって機械加工が困難になるためである。
The reason why the content of the rare earth metal R in the target composition to be produced is set in the above range is that if it is less than 5 atomic%, sufficient PTF (leakage magnetic flux density) cannot be obtained, and if it exceeds 10 atomic%, This is because a problem may occur in the corrosion resistance of the target.
Further, the reason why the Ta content in the target composition to be produced is set in the above range is that when it is less than 5 atomic% and exceeds 10 atomic%, sufficient density cannot be obtained, and the material becomes brittle and is machined. This is because it becomes difficult.
また、本発明のスパッタリングターゲットの製造方法は、前記Ｒ−Ｃｏ合金粉と前記Ｔａ粉との平均粒径が、３０〜４０μｍであることが好ましい。
このように、Ｒ−Ｃｏ合金粉とＴａ粉との平均粒径を上記範囲とした理由は、３０μｍ未満であると、不純物酸素濃度が増大するためであり、４０μｍを超えると、機械加工ができる程度まで密度を上げることが困難になるためである。
Moreover, it is preferable that the average particle diameter of the said R-Co alloy powder and the said Ta powder is 30-40 micrometers in the manufacturing method of the sputtering target of this invention.
As described above, the reason why the average particle size of the R—Co alloy powder and the Ta powder is in the above range is that the impurity oxygen concentration increases when it is less than 30 μm, and when it exceeds 40 μm, machining can be performed. This is because it is difficult to increase the density to the extent.
また、本発明のスパッタリングターゲットの製造方法は、前記Ｒが、Ｔｂであることを特徴とする。 The sputtering target manufacturing method of the present invention is characterized in that R is Tb.
本発明によれば、以下の効果を奏する。
すなわち、本発明に係るスパッタリングターゲットの製造方法によれば、希土類金属をＲとすると、２元系合金のＲ−Ｃｏ合金粉と、単体金属のＴａ粉と、の混合粉末をホットプレスするので、Ｒ−Ｃｏ合金相とＴａ単体相との間にＣｏＴａ合金相が介在することで、空孔やパーティクルが生じ難くなると共に割れ難く、機械加工ができる程度まで密度を向上させることができる。
したがって、本発明のスパッタリングターゲットの製造方法により作製したターゲットを用いてスパッタリングにより磁気記録媒体膜を成膜することで、高い生産性をもって高密度磁気記録媒体に適用される良好な磁気記録膜を得ることができる。
The present invention has the following effects.
That is, according to the manufacturing method of the sputtering target according to the present invention, when the rare earth metal is R, the mixed powder of the binary alloy R-Co alloy powder and the single metal Ta powder is hot-pressed. By interposing the CoTa alloy phase between the R—Co alloy phase and the Ta simple substance phase, it is difficult to generate vacancies and particles, and it is difficult to break, and the density can be improved to the extent that machining can be performed.
Therefore, a good magnetic recording film applied to a high-density magnetic recording medium can be obtained with high productivity by forming a magnetic recording medium film by sputtering using the target produced by the sputtering target manufacturing method of the present invention. be able to.
以下、本発明に係るスパッタリングターゲットの製造方法の一実施形態を、図１を参照して説明する。 Hereinafter, an embodiment of a method for producing a sputtering target according to the present invention will be described with reference to FIG.
本実施形態のスパッタリングターゲットの製造方法は、例えば磁気記録媒体膜形成用のターゲットを作製する方法であって、希土類金属をＲとしてＲ：５〜１０原子％、Ｔａ：５〜１０原子％を含有し、残部：Ｃｏおよび不可避不純物からなるターゲット組成となる割合で、ＣｏとＲとの合金粉末であるＲ−Ｃｏ合金アトマイズ粉と、Ｔａ粉と、の混合粉末を作製する工程と、該混合粉末を真空または不活性ガス雰囲気中でホットプレスする工程と、を有している。 The sputtering target manufacturing method of this embodiment is a method for producing a target for forming a magnetic recording medium film, for example, and includes R: 5 to 10 atomic% and Ta: 5 to 10 atomic%, where R is a rare earth metal. And a balance: a step of preparing a mixed powder of R-Co alloy atomized powder, which is an alloy powder of Co and R, and Ta powder in a ratio of a target composition composed of Co and inevitable impurities, and the mixed powder And hot pressing in a vacuum or an inert gas atmosphere.
なお、上記Ｒ−Ｃｏ合金アトマイズ粉とＴａ粉との平均粒径が、３０〜４０μｍであることが好ましい。
また、希土類金属Ｒは、例えばＴｂが採用されるが、Ｔｂ，Ｇｄ，Ｄｙ，Ｈｏ，ＴｍおよびＥｒのうちの１種または２種以上からなる希土類金属が採用可能である。
In addition, it is preferable that the average particle diameter of the said R-Co alloy atomized powder and Ta powder is 30-40 micrometers.
Moreover, although Tb is employ | adopted as rare earth metal R, the rare earth metal which consists of 1 type (s) or 2 or more types among Tb, Gd, Dy, Ho, Tm, and Er is employable, for example.
この製法の一例について詳述すれば、例えば、まず所定組成割合のＲ−Ｃｏ合金アトマイズ粉をガスアトマイズにより作製し、平均粒径が３０〜４０μｍとなるように所定メッシュの篩いでふるって、篩い下の粉末を回収する。
また、同様にメッシュの篩いを用いて、平均粒径３０〜４０μｍのＴａ粉を用意する。
If an example of this manufacturing method is described in detail, for example, R-Co alloy atomized powder having a predetermined composition ratio is first prepared by gas atomization, and sieved with a predetermined mesh so that the average particle size becomes 30 to 40 μm. Collect the powder.
Similarly, Ta powder having an average particle size of 30 to 40 μm is prepared using a mesh sieve.
次に、このＲ−Ｃｏ合金アトマイズ粉とＴａ粉とを所定のターゲット組成となるように秤量し、これらを容器に粉砕媒体となる５ｍｍφのジルコニアボール等と共に投入し、この容器をボールミルにより、例えばＡｒガス雰囲気中で１６時間回転させ、原料を混合して混合粉末とする。 Next, the R-Co alloy atomized powder and Ta powder are weighed so as to have a predetermined target composition, and these are put into a container together with a 5 mmφ zirconia ball or the like as a grinding medium, and the container is, for example, It is rotated for 16 hours in an Ar gas atmosphere, and the raw materials are mixed to obtain a mixed powder.
次に、得られた混合粉末を真空ホットプレスにより成型焼結し、さらに機械加工により所定サイズの焼結体を得る。なお、上記真空ホットプレスは、例えば１０００℃で３時間、３５０ｋｇ／ｃｍ２の圧力で行う。
こうして得られた焼結体を、バッキングプレートに接合してターゲットとする。
Next, the obtained mixed powder is molded and sintered by a vacuum hot press, and a sintered body having a predetermined size is obtained by machining. In addition, the said vacuum hot press is performed by the pressure of 350 kg / cm < 2 >, for example at 1000 degreeC for 3 hours.
The sintered body thus obtained is bonded to a backing plate to be a target.
このホットプレスによる高密度、高強度化は、次のようなメカニズムによって行われていると考えられる。例えば、希土類金属ＲにＴｂを採用した場合、まず、Ｔａはホットプレス温度で軟化して、硬質のＣoＴｂ粉の間の空隙を充填していく。次に、ホットプレス温度に保持すると、ＣｏＴｂ中のＣｏが表面に拡散し、ＣｏＴａ合金相を形成し、ＣｏＴｂ粒子同士を拡散接合する。また、硬質のＣｏＴｂ間をＴａが充填し、空隙を減少させ、さらにホットプレス温度で保持することによりＣｏＴｂ中のＣｏが表面拡散し、隣接するＴａと合金化することによりＣｏＴｂ粒子同士を結合し、強度を高める。また、ＣｏＴｂ粒子同士もホットプレス温度で保持することにより相互に拡散し、接合する。したがって、Ｔａによる空隙の充填、ＣｏＴａ合金相の形成およびＣｏＴｂ同士の結合によってターゲット密度は向上し、また強度が高まる。 High density and high strength by this hot pressing are considered to be performed by the following mechanism. For example, when Tb is adopted for the rare earth metal R, Ta is first softened at the hot press temperature to fill the gaps between the hard CoTb powders. Next, when the hot press temperature is maintained, Co in CoTb diffuses to the surface, forms a CoTa alloy phase, and CoTb particles are diffusion bonded. Also, Ta fills the space between hard CoTb, reduces the voids, and further maintains the hot pressing temperature to diffuse the surface of Co in CoTb, and bonds CoTb particles together by alloying with adjacent Ta. Increase strength. Further, CoTb particles are also diffused and bonded to each other by being held at the hot press temperature. Therefore, the target density is improved and the strength is increased by filling the gap with Ta, forming the CoTa alloy phase, and bonding CoTb.
このように本実施形態のスパッタリングターゲットの製造方法では、希土類金属をＲとすると、２元系合金のＲ−Ｃｏ合金アトマイズ粉と、単体金属のＴａ粉と、の混合粉末をホットプレスすると、図１に示すように、Ｒ−Ｃｏ合金中のＣｏが、ホットプレス中にＲ−Ｃｏ合金粉表面に拡散し、隣接するＴａと反応し、ＣｏＴａ合金相１が形成され、作製されたターゲットの組織が、Ｒ−Ｃｏ合金相２、ＣｏＴａ合金相１およびＣｏＴａ合金相１で被覆された部分的に未反応のＴａ単体相３の３相で構成される。したがって、Ｒ−Ｃｏ合金相２とＴａ単体相３との間にＣｏＴａ合金相１が介在することで、空孔やパーティクルが生じ難くなると共に割れ難く、機械加工ができる程度まで密度を向上させることができる。 As described above, in the sputtering target manufacturing method of the present embodiment, when the rare earth metal is R, when a mixed powder of a binary alloy R-Co alloy atomized powder and a single metal Ta powder is hot pressed, As shown in FIG. 1, Co in the R—Co alloy diffuses on the surface of the R—Co alloy powder during hot pressing and reacts with adjacent Ta to form a CoTa alloy phase 1, and the structure of the produced target Is composed of three phases of an R—Co alloy phase 2, a CoTa alloy phase 1, and a partially unreacted Ta simple substance phase 3 coated with the CoTa alloy phase 1. Therefore, by interposing the CoTa alloy phase 1 between the R—Co alloy phase 2 and the Ta simple substance phase 3, voids and particles are less likely to be generated and cracked, and the density is improved to such an extent that machining is possible. Can do.
次に、上記実施形態のスパッタリングターゲットの製造方法に基づき作製した実施例により、実際に評価した結果を図２から図７を参照して説明する。 Next, actual evaluation results will be described with reference to FIG. 2 to FIG. 7 according to an example manufactured based on the manufacturing method of the sputtering target of the above embodiment.
まず、上述した本実施形態の製法に基づいて、希土類金属ＲとしてＴｂを採用し、ＣｏとＴｂとの合金粉末であるＣｏ９３Ｔｂ８（原子％）アトマイズ粉を作製し、平均粒径が３０〜４０μｍとなるように所定メッシュの篩いでふるって、篩い下の粉末を回収した。同様にメッシュの篩いを用いて、平均粒径３０〜４０μｍのＴａ粉を用意し、原子％でＣｏ９３Ｔａ９Ｔｂ８となるように、粉末を混合し、真空雰囲気中でホットプレスして本実施例のＣｏＴａＴｂターゲットを作製した。
また、比較例として、３元系合金粉末であるＣｏ９３Ｔａ９Ｔｂ８（原子％）アトマイズ粉を、上記と同様に真空雰囲気中でホットプレスしてＣｏＴａＴｂターゲットを作製した。
First, based on the manufacturing method of the present embodiment described above, Tb is adopted as the rare earth metal R to produce Co93Tb8 (atomic%) atomized powder, which is an alloy powder of Co and Tb, and the average particle size is 30 to 40 μm. The powder under the sieve was recovered by sieving with a sieve of a predetermined mesh. Similarly, a Ta powder having an average particle size of 30 to 40 μm is prepared using a mesh sieve, and the powder is mixed so that it becomes Co93Ta9Tb8 in atomic%, and hot-pressed in a vacuum atmosphere to obtain the CoTaTb target of this example. Was made.
Further, as a comparative example, a Co93Ta9Tb8 (atomic%) atomized powder, which is a ternary alloy powder, was hot-pressed in a vacuum atmosphere in the same manner as described above to produce a CoTaTb target.
本実施例のターゲットの断面組織をＥＰＭＡ（電子線マイクロプローブアナライザ）により測定した二次電子像および組成像（ＣＯＭＰＯ像）を、図２および図３に示す。また、この本実施例のターゲットの断面組織をＥＰＭＡにより測定した各元素の元素分布像を、図４に示す。 A secondary electron image and a composition image (COMPO image) obtained by measuring the cross-sectional structure of the target of this example with an EPMA (electron beam microprobe analyzer) are shown in FIGS. Moreover, the element distribution image of each element which measured the cross-sectional structure | tissue of the target of this Example by EPMA is shown in FIG.
また、比較例のターゲットの断面組織についても、本実施例と同様に、ＥＰＭＡにより測定した二次電子像、組成像（ＣＯＭＰＯ像）および各元素の元素分布像を、図５から図７に示す。
なお、ＥＰＭＡによる元素分布像は、本来カラー像であるが、白黒像に変換して記載しているため、濃淡の淡い部分（比較的白い部分）が所定元素の濃度が高い部分となっている。
As for the cross-sectional structure of the target of the comparative example, as in this example, the secondary electron image, composition image (COMPO image), and element distribution image of each element measured by EPMA are shown in FIGS. .
The element distribution image by EPMA is originally a color image, but is described after being converted into a black and white image, and thus a light and dark portion (relatively white portion) is a portion where the concentration of the predetermined element is high. .
これらの測定結果から、比較例のターゲット組織は、空孔が多いと共に、全体が３元系合金相であるＣｏＴａＴｂ合金相で構成されているのに対し、本実施例のターゲット組織は、空孔が無く、緻密な組織になっていると共に、ＣｏＴｂ合金相の素地中にＣｏＴａ合金相に覆われたＴａ単体相が均一に分散された組織となっていることがわかる。 From these measurement results, the target structure of the comparative example has many vacancies and is entirely composed of a CoTaTb alloy phase that is a ternary alloy phase, whereas the target structure of the present example has vacancies. It can be seen that the structure is dense and the Ta single phase covered with the CoTa alloy phase is uniformly dispersed in the base of the CoTb alloy phase.
また、本実施例と比較例とについて、密度比を測定したところ、比較例が８７．８％であったところ、本実施例では、９７．１％であり、大幅に密度が向上し、容易に機械加工できた。
なお、密度比は、以下のように定義して測定した。
密度比の定義＝（ρの測定値／ρの計算値）
ρの計算値＝１００／〔（Ｆｅの重量％）／（Ｆｅの密度）＋（Ｐｔの重量％）／（Ｐｔの密度）＋（ＳｉＯ２の重量％）／（ＳｉＯ２の密度）〕
なお、本実施例は、漏れ磁束密度（ＰＴＦ）も良好な値が得られている。
Further, when the density ratio was measured for this example and the comparative example, the comparative example was 87.8%, and in this example, it was 97.1%, which greatly improved the density and was easy. Could be machined.
The density ratio was defined and measured as follows.
Definition of density ratio = (measured value of ρ / calculated value of ρ)
Calculated value of ρ = 100 / [(% by weight of Fe) / (density of Fe) + (% by weight of Pt) / (density of Pt) + (% by weight of SiO 2 ) / (density of SiO 2 )]
In the present embodiment, a good value is also obtained for the leakage magnetic flux density (PTF).
なお、本発明の技術範囲は上記実施形態及び上記実施例に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。 The technical scope of the present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the spirit of the present invention.
１…ＣｏＴａ合金相、２…Ｒ−Ｃｏ合金相、３…Ｔａ単体相 1 ... CoTa alloy phase, 2 ... R-Co alloy phase, 3 ... Ta simple substance phase
Claims (3)
該混合粉末を真空または不活性ガス雰囲気中でホットプレスする工程と、を有していることを特徴とするスパッタリングターゲットの製造方法。 R— which is an alloy powder of Co and R in a ratio of R: 5 to 10 atom%, Ta: 5 to 10 atom%, and the balance: Co and inevitable impurities as a rare earth metal. Producing a mixed powder of Co alloy powder and Ta powder;
And a step of hot-pressing the mixed powder in a vacuum or in an inert gas atmosphere.
前記Ｒ−Ｃｏ合金粉と前記Ｔａ粉との平均粒径が、３０〜４０μｍであることを特徴とするスパッタリングターゲットの製造方法。 In the manufacturing method of the sputtering target of Claim 1,
The method for producing a sputtering target, wherein an average particle diameter of the R—Co alloy powder and the Ta powder is 30 to 40 μm.
前記Ｒが、Ｔｂであることを特徴とするスパッタリングターゲットの製造方法。 In the manufacturing method of the sputtering target of Claim 1 or 2,
Said R is Tb, The manufacturing method of the sputtering target characterized by the above-mentioned.
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| JPH0617244A (en) * | 1992-07-02 | 1994-01-25 | Hitachi Ltd | Target for corrosion resistant magnetic film and magnetic head using the same |
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| JPH11286776A (en) * | 1998-04-02 | 1999-10-19 | Mitsubishi Materials Corp | Sputtering target for forming magnet-optical recording medium |
| JP2003085725A (en) * | 2001-09-13 | 2003-03-20 | Fuji Electric Co Ltd | Perpendicular magnetic recording medium and method of manufacturing the same |
| JP2004272982A (en) * | 2003-03-06 | 2004-09-30 | Fuji Electric Device Technology Co Ltd | Manufacturing method of perpendicular magnetic recording medium, and perpendicular magnetic recording medium |
| JP2006077323A (en) * | 2004-09-01 | 2006-03-23 | Heraeus Inc | Sputtering target material for forming improved magnetic layer |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0617244A (en) * | 1992-07-02 | 1994-01-25 | Hitachi Ltd | Target for corrosion resistant magnetic film and magnetic head using the same |
| JPH0790567A (en) * | 1993-07-30 | 1995-04-04 | Hitachi Metals Ltd | Target material for magneto-optical recording medium and its production |
| JPH11286776A (en) * | 1998-04-02 | 1999-10-19 | Mitsubishi Materials Corp | Sputtering target for forming magnet-optical recording medium |
| JP2003085725A (en) * | 2001-09-13 | 2003-03-20 | Fuji Electric Co Ltd | Perpendicular magnetic recording medium and method of manufacturing the same |
| JP2004272982A (en) * | 2003-03-06 | 2004-09-30 | Fuji Electric Device Technology Co Ltd | Manufacturing method of perpendicular magnetic recording medium, and perpendicular magnetic recording medium |
| JP2006077323A (en) * | 2004-09-01 | 2006-03-23 | Heraeus Inc | Sputtering target material for forming improved magnetic layer |
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