JP2004272982A - Manufacturing method of perpendicular magnetic recording medium, and perpendicular magnetic recording medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a perpendicular magnetic recording medium furnished with the stability for intense heat and with the low noise property. <P>SOLUTION: A material of high Ku ≥4.0×10<SP>6</SP>erg/cc is used as a magnetic recording layer 103 of the perpendicular magnetic recording medium 100, and also a method including a process for irradiating a metallic element ion is adopted. The Ku is hardly lowered for the perpendicular medium manufactured by this manufacturing method while having the magnetic recording layer 103 whereon the metallic element ion is cubicly dispersed in a film surface direction and film thickness direction. Thus, a transition area between bits is fixed in the part where the implanted metallic element ion is in existence, and does not connect with the adjacent bits to enable the write-in even at the high recording density. Since the irregularity on the medium surface does not increase after the irradiation with the metallic element ion, the magnetic head can be stably floated. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method of manufacturing a perpendicular magnetic recording medium and a perpendicular magnetic recording medium, and more particularly to a method of manufacturing a perpendicular magnetic recording medium mounted on various magnetic recording devices such as a hard disk drive, and a perpendicular magnetic recording medium manufactured by the method. It relates to a recording medium.
[0002]
[Prior art]
2. Description of the Related Art In recent years, a perpendicular magnetic recording method in which recording magnetization is perpendicular to the in-plane direction of a medium has been attracting attention as a technique for realizing high-density magnetic recording, instead of the conventional longitudinal magnetic recording method. Perpendicular magnetic recording media are mainly composed of a magnetic recording layer of a hard magnetic material, an underlayer for orienting the magnetic recording layer in a desired direction, a protective film for protecting the surface of the magnetic recording layer, and recording on the recording layer. And a backing layer of a soft magnetic material which plays a role of concentrating the magnetic flux generated by the magnetic head used for the magnetic head. The soft magnetic underlayer has higher performance of the medium when it is present, but can be recorded even without it, and thus may be omitted. A medium without such a soft magnetic underlayer is called a single-layer perpendicular magnetic recording medium, and a medium with a soft magnetic underlayer is called a double-layer perpendicular magnetic recording medium.
[0003]
In the perpendicular magnetic recording medium, as in the case of the longitudinal magnetic recording medium, it is essential to achieve both high thermal stability and low noise in order to increase the recording density. At present, an alloy made of CoCr is generally used as a material of a magnetic recording layer of a magnetic recording medium. It is known that a CoCr alloy has a so-called granular structure including ferromagnetic crystal grains and non-magnetic crystal grain boundaries. In this granular structure, it is considered ideal that the individual particles are fine and magnetically separated.
[0004]
In a magnetic recording layer using a CoCr alloy as a material, a bit transition region is determined by a crystal grain boundary close to non-magnetic, and a bit is formed. By devising an underlayer or performing ion implantation, The crystal grain size is refined to achieve higher density. For example, in Patent Literature 1, CoNiCrPt-X is used as a longitudinal magnetic recording material, and the coercive force is improved by performing ion implantation. In Patent Document 2, a CoCr alloy or an Fe-based alloy is used as a perpendicular magnetic recording material, and the crystal grains are refined by performing ion implantation.
[0005]
As described above, in the above-described CoCr alloy material, magnetic separability can be relatively easily achieved.
[0006]
[Problems to be solved by the invention]
However, in the CoCr alloy material, the magnetocrystalline anisotropy constant Ku, which is an index of thermal stability, is generally as small as 1.5 to 3.0 × 10 ⁶ erg / cc. However, there is a problem that there is material concern about the thermal stability in the case of the above.
[0007]
Also, if the particle size is too small, it becomes paramagnetic and loses ferromagnetism, so that there is a limit to miniaturization of crystal grains. In the technique described in Patent Document 3, a heat treatment is performed after ion implantation to completely demagnetize the implanted portion to form a patterned medium in which one particle becomes one bit, and a device that maintains thermal stability even with a CoCr-based material. ing. However, since the steps of forming and removing the resist mask are required, there is a problem that efficiency cannot be improved in terms of productivity.
[0008]
On the other hand, in addition to such a conventional CoCr-based material, in a perpendicular magnetic recording medium, as a high Ku material having a Ku exceeding 4.0 × 10 ⁶ erg / cc, a multilayer laminated film such as Co / Pt or Co / Pd is used. Researches on alloys composed of rare earths and transition metals, which are also used for magneto-optical recording media, have been conducted. When the bit size is reduced by using these high Ku materials, magnetization can be stably maintained, and it is theoretically considered that ultra-high recording density can be achieved.
[0009]
In general, the above-mentioned high Ku material has a very large magnetic interaction between bits, so that it is easily connected to adjacent bits and it is difficult to write small bits. On the other hand, for example, Non-Patent Document 1 succeeds in reducing magnetic interaction by adding B to Co of the Co / Pd multilayer laminated film. However, there is a problem that Ku is also greatly reduced at the same time.
[0010]
A method of physically separating the underlayer of the magnetic recording layer is also conceivable, but in this case, there is a problem that the stable floating of the magnetic head may be hindered because the surface unevenness becomes large.
[0011]
The present invention has been made in view of the above problems, and has as its object to provide a high Ku, a magnetic recording layer capable of writing ultra-fine bits, and excellent surface flatness and stability. It is an object of the present invention to provide a method of manufacturing a perpendicular magnetic recording medium capable of performing recording and reproduction, and a perpendicular magnetic recording medium manufactured by using the method.
[0012]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 7-141641
[Patent Document 2]
JP 2000-298825 A
[Patent Document 3]
JP-A-2002-288813
[Non-patent document 1]
IEEE Transactions on magnetics, Volume 38, Number 5, 2048-2050 (September 2002)
[0016]
[Means for Solving the Problems]
In order to achieve such an object, a method for manufacturing a perpendicular magnetic recording medium according to the present invention is directed to a method for manufacturing a perpendicular magnetic recording medium in which at least an underlayer, a magnetic recording layer, and a protective film are sequentially laminated on a nonmagnetic substrate. A step of forming a magnetic layer made of a high Ku material having a perpendicular magnetic anisotropy constant Ku ≧ 4.0 × 10 ⁶ erg / cc, and implanting metal element ions into the magnetic layer And a second step of forming the magnetic recording layer.
[0017]
Here, the first step may include a step of forming the magnetic layer by laminating different kinds of materials, or a step of forming the magnetic layer using an alloy including a rare earth and a transition metal.
[0018]
Here, the step of laminating the different materials to form the magnetic layer may include a step of laminating a Co material and a Pt material, or a step of laminating a Co material and a Pd material.
[0019]
In the second step, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ta, The method may include a step of implanting ions of at least one element selected from the group consisting of W, Pt, Au, Bi, and Er.
[0020]
The method may further include a step of forming a soft magnetic underlayer on the non-magnetic substrate before forming the underlayer.
[0021]
The perpendicular magnetic recording medium according to the present invention is a perpendicular magnetic recording medium in which at least an underlayer, a magnetic recording layer, and a protective film are sequentially laminated on a nonmagnetic substrate, wherein the magnetic recording layer has a perpendicular crystal magnetic anisotropy. This is obtained by forming a magnetic layer made of a high Ku material having a sex constant Ku ≧ 4.0 × 10 ⁶ erg / cc and implanting metal element ions into the magnetic layer.
[0022]
Here, the magnetic layer may be formed by laminating different materials or using an alloy made of a rare earth and a transition metal.
[0023]
Here, the different materials can be a Co material and a Pt material, or a Co material and a Pd material.
[0024]
The metal element ions are Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ta, It can be an ion of at least one element selected from the group consisting of W, Pt, Au, Bi and Er.
[0025]
Further, a soft magnetic underlayer may be formed between the nonmagnetic substrate and the underlayer.
[0026]
In the present invention, a method is used in which a high Ku material with Ku ≧ 4.0 × 10 ⁶ erg / cc is used as the magnetic recording layer of the perpendicular magnetic recording medium and the method includes a step of irradiating metal element ions. In the perpendicular medium manufactured by this manufacturing method and having the magnetic recording layer in which metal element ions are tertiarily dispersed in the film surface direction and the film thickness direction, Ku is hardly reduced. For this reason, a transition region between bits is fixed in a portion where the implanted metal element ions are present, and writing can be performed even at a high recording density without being connected to an adjacent bit. In addition, since the irregularities on the medium surface do not increase after the irradiation with the metal element ions, the magnetic head can stably fly.
[0027]
With the configuration as described above, it is possible to manufacture a perpendicular magnetic recording medium capable of recording and reproducing at high density.
[0028]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described in detail. FIG. 1 schematically shows a cross section of a perpendicular magnetic recording medium according to an embodiment of the present invention. The perpendicular magnetic recording medium 100 has a structure in which at least a base layer 102, a magnetic recording layer 103, and a protective film 104 are sequentially formed on a non-magnetic substrate 101, and a liquid lubricant layer 105 is further formed thereon. Is formed.
[0029]
As the non-magnetic substrate 101, a NiP-plated Al alloy, tempered glass, crystallized glass, or the like, which is used for a normal magnetic recording medium, can be used. When the substrate heating temperature is about 100 ° C., a plastic substrate made of a resin such as polycarbonate or polyolefin can be used.
[0030]
When a multilayer laminated film is used for the upper magnetic recording layer 103, the underlayer 102 is used for the purpose of improving the crystallinity. For example, in consideration of lattice matching, it is preferable to use a metal having a body-centered cubic lattice structure or an alloy material thereof. Examples of metals having a body-centered cubic lattice structure include Pt, Pd, and Cr. In addition, it is also possible to use a metal having a hexagonal close-packed structure or an alloy material thereof, or a metal having a face-centered cubic lattice structure or an alloy material thereof. Examples of the metal having a hexagonal close-packed structure include Ti, Zr, Ru, Zn, Tc, and Re. Examples of the metal having a face-centered cubic lattice structure include Cu, Rh, Pd, Ag, Ir, and Pt. Au, Ni, Co and the like are mentioned as examples.
[0031]
When the magnetic recording layer 103 employs an amorphous material of an alloy including a rare earth and a transition metal, it is possible to employ not only the above-mentioned crystalline underlayer but also a material exhibiting an amorphous structure.
[0032]
When the perpendicular magnetic recording medium 100 is a two-layer perpendicular magnetic recording medium, a soft magnetic underlayer 111 can be provided below the underlayer 102, that is, between the nonmagnetic substrate 101 and the underlayer 102. The soft magnetic underlayer 111 plays a role of concentrating the magnetic flux generated by the magnetic head. As the soft magnetic underlayer 111, for example, a crystalline NiFe alloy, a sendust (FeSiAl) alloy, or the like, microcrystalline FeTaC or CoTaZr, an amorphous Co alloy CoZrNb, or the like can be used. Although the optimum value of the thickness of the soft magnetic backing layer 111 varies depending on the structure and characteristics of the magnetic head used for recording, it is preferably about 10 nm or more and about 500 nm or less from the viewpoint of productivity.
[0033]
The magnetic recording layer 103 is formed by using a high-Ku material having a perpendicular magnetic anisotropy constant Ku ≧ 4.0 × 10 ⁶ erg / cc, and then depositing metal element ions on the magnetic layer. It is formed by irradiation. The magnetic recording layer 103 formed of a material has a structure in which metal element ions are tertiarily dispersed in a film surface direction and a film thickness direction.
[0034]
Examples of the material used for the magnetic layer include a multilayer film such as Co / Pt and Co / Pd, and an alloy including a rare earth and a transition metal. The metal element ions to be implanted in the above process include Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, and Sn. , Sb, Ta, W, Pt, Au, Bi and Er ions can be used.
[0035]
As the conditions at the time of metal element ion irradiation, it is preferable that the dose is 1 × 10 ¹³ to 1 × 10 ¹⁹ / cm ² , the implantation energy is 10 to 400 keV, and the degree of vacuum is 1 × 10 ⁻⁷ Torr or less.
[0036]
Although heat treatment can be performed after the implantation of metal element ions, the temperature is preferably set to approximately 250 ° C. or lower in order to prevent a decrease in Ku. In this case, in order to prevent an oxidation reaction on the surface of the magnetic layer, it is preferable to perform the treatment in a vacuum at a degree of vacuum of 10 ⁻⁷ Torr or less or in a nitrogen atmosphere.
[0037]
As the protective film 104, for example, a thin film mainly composed of carbon is used. For the liquid lubricant layer 105, for example, a perfluoropolyether-based lubricant can be used.
[0038]
【Example】
Hereinafter, examples of the present invention will be described. For Examples 1 and 2, and Comparative Examples 1 and 2, magnetic property evaluation and magnetic cluster size evaluation were performed, and for Examples 3 and 4, and Comparative Examples 3 and 4, electromagnetic conversion property evaluation was performed.
[0039]
(Example 1)
A chemically strengthened glass substrate (for example, N-5 glass substrate manufactured by HOYA) having a smooth surface is used as the non-magnetic substrate, and after washing, introduced into a vacuum apparatus provided with a film formation chamber and an ion implantation chamber, and a Pt target Was used to form a Pt underlayer 10 nm under an Ar gas pressure of 5 mTorr. Further, a Co layer having a thickness of 0.44 nm is alternately formed using a Co target, and a Pt layer having a thickness of 0.3 nm is alternately formed using a Pt target, and fifteen layers are stacked to obtain [Co (0.44 nm) / Pt]. (0.3 nm)] ₁₅ magnetic layers were formed. Subsequently, ion implantation was performed in an ion implantation chamber. The ion implantation is performed under a vacuum degree of 7.0 × 10 ⁻⁹ Torr by changing the implantation energy in the range of 30 to 200 keV, and the ion dose amount is kept constant at about 1.5 × 10 ¹⁴ / cm ^2. I went to.
[0040]
Under these conditions, implanted ions were changed to Al, Cr, Ni and Ga ions, respectively. In addition, the ion dose was kept constant at about 5.0 × 10 ¹³ ions / cm ² and the ions to be implanted were changed to Nb, Mo, Ag and Au ions, respectively. Finally, after forming a protective film made of carbon with a thickness of 7 nm using a carbon target, the film was taken out of the vacuum apparatus. Thereafter, a liquid lubricant layer of 2 nm made of perfluoropolyether was formed by dipping to obtain a single-layer perpendicular magnetic recording medium. The layers were formed by DC magnetron sputtering.
[0041]
(Comparative Example 1)
As a comparative example, a single-layer perpendicular magnetic recording medium was manufactured in the same manner as in Example 1 except that the ion implantation was not performed in the ion implantation chamber.
[0042]
(Example 2)
A chemically strengthened glass substrate (for example, N-5 glass substrate manufactured by HOYA) having a smooth surface is used as the non-magnetic substrate. After washing, the substrate is introduced into a vacuum apparatus provided with a film formation chamber and an ion implantation chamber, and a Ta target is used. Was used to form a Ta underlayer 10 nm under an Ar gas pressure of 5 mTorr. Further, using a Tb ₁₅ Co ₈₅ target, a TbCo magnetic recording layer was formed to a thickness of 20 nm under an Ar gas pressure of 5 mTorr. Subsequently, ion implantation was performed in an ion implantation chamber. The ion implantation is performed under the condition of a vacuum degree of 7.0 × 10 ⁻⁹ Torr by changing the implantation energy in a range of 50 to 300 keV so that the ion dose amount is constant at about 2.0 × 10 ¹⁶ / cm ^2. I went to.
[0043]
Under such conditions, ions to be implanted were changed to Ti, V, Cu and Sb ions, respectively. In addition, the ion dose was constant at about 7.0 × 10 ¹⁵ / cm ² and the ions to be implanted were changed to Pd, Ta, W and Pt ions, respectively. Finally, after forming a protective film made of carbon with a thickness of 7 nm using a carbon target, the film was taken out of the vacuum apparatus. Thereafter, a liquid lubricant layer of 2 nm made of perfluoropolyether was formed by dipping to obtain a single-layer perpendicular magnetic recording medium. The layers were formed by DC magnetron sputtering.
[0044]
(Comparative Example 2)
As a comparative example, a single-layer perpendicular magnetic recording medium was manufactured in the same manner as in Example 2 except that the ion implantation was not performed in the ion implantation chamber.
[0045]
FIG. 2 shows the values of the crystal magnetic anisotropy constant Ku obtained from the torque measurement and the value of the magnetic cluster size D obtained from the MFM measurement according to Examples 1 and 2 and Comparative Examples 1 and 2.
[0046]
Ku was determined from a torque curve measured using a torque meter. The magnetic cluster size D is a diameter obtained by measuring the AC demagnetized medium by MFM and obtaining a circle from the obtained image. The magnetic cluster size is an index indicating the size of the unit of magnetization reversal. That is, it can be considered that the smaller the magnetic cluster size is, the more finer the bits can be written.
[0047]
From the figure, when Example 1 and Comparative Example 1 are compared, a large change in Ku due to implantation of metal element ions is not observed, and a large value of 5.0 to 6.1 × 10 ⁶ erg / cc is shown. I have. On the other hand, the magnetic cluster size was significantly reduced in Example 1 in which metal element ions were implanted with respect to Comparative Example 1, and the effect of the metal element ion implantation was observed. Similarly, when Example 2 and Comparative Example 2 are compared, the change in Ku is small, maintains a large value of 4.1 to 4.9 × 10 ⁶ erg / cc even after implantation of metal element ions, and shows the magnetic cluster size. It can be seen that is greatly reduced.
[0048]
(Example 3)
Before forming the Pt _underlayer, Co 87 _Zr 5 Nb ₈ in the same manner as in Example 1 except that 200nm forming a CoZrNb soft magnetic backing layer using a target, ions to be implanted is different double-layered perpendicular magnetic Each recording medium was manufactured.
[0049]
(Example 4)
A two-layer perpendicular magnetic field in which ions to be implanted are different by the same method as in Example 2 except that a CoZrNb soft magnetic underlayer is formed to a thickness of 200 nm using a Co ₈₇ Zr ₅ Nb ₈ target before the Ta underlayer is formed. Each recording medium was manufactured.
[0050]
(Comparative Example 3)
As a comparative example, two-layer perpendicular magnetic recording was performed in the same manner as in Comparative Example 1 except that a CoZrNb soft magnetic underlayer was formed to a thickness of 200 nm using a Co ₈₇ Zr ₅ Nb ₈ target before forming a Pt underlayer. The media was manufactured.
[0051]
(Comparative Example 4)
As a comparative example, two-layer perpendicular magnetic recording was performed in the same manner as in Comparative Example 2 except that a CoZrNb soft magnetic underlayer was formed to a thickness of 200 nm using a Co ₈₇ Zr ₅ Nb ₈ target before forming the Pt underlayer. The media was manufactured.
[0052]
Here, in Examples 3 and 4, and Comparative Examples 3 and 4, from the X-ray diffraction measurement, the CoZrNb soft magnetic backing layer had an amorphous structure, and the crystal orientation of the upper Pt underlayer and the Co / Pt magnetic layer. Alternatively, it has been confirmed that the crystal orientation of the Ta underlayer is the same as in Examples 1 and 2 and Comparative Examples 1 and 2. Therefore, the Ku and magnetic cluster size of Examples 3 and 4 and Comparative Examples 3 and 4 may be considered to be equivalent to the values obtained in Examples 1 and 2 and Comparative Examples 1 and 2, respectively.
[0053]
FIG. 3 shows the normalized noise and SNR values at a linear recording density of 400 kFCI obtained from the evaluation of the electromagnetic conversion characteristics according to Examples 3 and 4 and Comparative Examples 3 and 4. The electromagnetic conversion characteristics were measured by a spin stand tester using a GMR head. Note that the normalized noise and SNR are values at a linear recording density of 400 kFCI.
[0054]
It can be seen from the figure that the noise in Example 3 in which metal element ions were implanted was significantly lower than that in Comparative Example 3. This reflects the result of the reduction in the magnetic cluster size described above. Based on the result of this noise reduction, it can be seen that the SNR was improved in Example 3 as compared with Comparative Example 3, and that recording and reproduction at a high recording density became possible. Similarly, the noise is reduced and the SNR is improved in the example 4 as compared with the comparative example 4.
[0055]
When the change in signal output with time at a linear recording density of 25 kFCI was evaluated, the samples of Examples 3 and 4 were all in the range of 0 to -0.05 [% / decade]. In general, in a perpendicular medium, as the linear recording density becomes lower, that is, as the bit length becomes longer, the bit surface area becomes larger and the demagnetizing field becomes larger. With this in mind, this result at a relatively long bit length of 25 kFCI is very good. This is considered to be because in all of Examples 3 and 4, Ku is as large as 4.0 × 10 ⁶ erg / cc or more, so that there is almost no signal deterioration and excellent thermal stability.
[0056]
For confirmation, the same evaluation was performed at 400 kFCI having a high recording density. As a result, signal deterioration was 0 [% / decade] in all samples. Further, as a result of measuring the surface roughness Ra using an AFM (atomic force microscope), Comparative Examples 3 and 4 had Ra = 0.43 and 0.41 [nm], whereas Examples 3 and 4 4 are all substantially equal to the range of Ra = 0.4 to 0.5 [nm]. Also, no problem occurred with respect to the flying characteristics of the magnetic head.
[0057]
As described above, it is understood that the implantation of the metal element ions does not affect the surface state of the medium to cause a problem.
[0058]
In addition to the embodiments described above, when a multilayer laminated film made of another material such as Co / Pd or an alloy made of another rare earth and a transition metal such as TbFeCo is used, Ku is also reduced by the same method. Fine bits can be formed while maintaining the same.
[0059]
Also, the effects of the present invention can be obtained similarly when using ions of Mn, Fe, Co, Zn, Ge, Y, Zr, Sn, Bi, and Er other than those described in the examples. It is possible.
[0060]
【The invention's effect】
As described above, according to the present invention, by implanting metal element ions into the magnetic recording layer of the perpendicular magnetic recording medium, it is possible to form fine bits while maintaining Ku. As a result, a perpendicular magnetic recording medium having both high thermal stability and low noise can be manufactured.
[0061]
Further, according to the present invention, since the noise of the perpendicular magnetic recording medium is reduced, the SNR is improved, so that the density of the perpendicular magnetic recording medium can be increased.
[Brief description of the drawings]
FIG. 1 is a diagram schematically showing a cross section of a perpendicular magnetic recording medium according to the present invention.
FIG. 2 is a diagram showing values of Ku and the diameter D of a magnetic cluster in the single-layer perpendicular magnetic recording media of Examples 1 and 2 of the present invention and Comparative Examples 1 and 2.
FIG. 3 is a diagram showing normalized noise and SNR (signal-to-noise ratio) in the dual-layer perpendicular magnetic recording media of Examples 3 and 4 of the present invention and Comparative Examples 3 and 4.
[Explanation of symbols]
Reference Signs List 101 Nonmagnetic substrate 102 Underlayer 103 Magnetic recording layer 104 Protective film 105 Liquid lubricant layer 111 Soft magnetic backing layer

Claims (10)

In a method for manufacturing a perpendicular magnetic recording medium in which at least an underlayer, a magnetic recording layer, and a protective film are sequentially laminated on a nonmagnetic substrate,
A first step of forming a magnetic layer made of a high Ku material having a perpendicular magnetic anisotropy constant Ku ≧ 4.0 × 10 ⁶ erg / cc;
A second step of forming the magnetic recording layer by implanting metal element ions into the magnetic layer. 2. The method for manufacturing a perpendicular magnetic recording medium according to claim 1, wherein the first step includes:
A method for manufacturing a perpendicular magnetic recording medium, comprising a step of forming the magnetic layer by laminating dissimilar materials, or a step of forming the magnetic layer using an alloy comprising a rare earth and a transition metal. 3. The method of manufacturing a perpendicular magnetic recording medium according to claim 2, wherein the step of forming the magnetic layer by laminating the different kinds of materials comprises:
A method for manufacturing a perpendicular magnetic recording medium, comprising a step of laminating a Co material and a Pt material, or a step of laminating a Co material and a Pd material. 4. The method for manufacturing a perpendicular magnetic recording medium according to claim 1, wherein said second step is performed for Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Implanting ions of at least one element selected from the group consisting of Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ta, W, Pt, Au, Bi and Er. Of manufacturing a perpendicular magnetic recording medium. The method for manufacturing a perpendicular magnetic recording medium according to any one of claims 1 to 4, further comprising a step of forming a soft magnetic underlayer on the nonmagnetic substrate before forming the underlayer. Of manufacturing a perpendicular magnetic recording medium. In a perpendicular magnetic recording medium in which at least an underlayer, a magnetic recording layer, and a protective film are sequentially laminated on a non-magnetic substrate, the magnetic recording layer has a perpendicular magnetic anisotropy constant Ku ≧ 4.0 × 10 ^6. A perpendicular magnetic recording medium obtained by forming a magnetic layer made of a high Ku material of erg / cc and implanting metal element ions into the magnetic layer. 7. The perpendicular magnetic recording medium according to claim 6, wherein the magnetic layer is formed by laminating different materials or using an alloy composed of a rare earth and a transition metal. 8. The perpendicular magnetic recording medium according to claim 7, wherein the different material is a Co material and a Pt material, or a Co material and a Pd material. 9. The perpendicular magnetic recording medium according to claim 6, wherein the metal element ions are Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr. , Nb, Mo, Ag, In, Sn, Sb, Ta, W, Pt, Au, Bi, and Er. 10. The perpendicular magnetic recording medium according to claim 6, wherein a soft magnetic underlayer is formed between the nonmagnetic substrate and the underlayer.

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