JP2011205026A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that prevents a lift pin from breaking even when a substrate elevation member is moved to an upper position with a top plate lowered in a state wherein elevation operation of the substrate elevation member is not restricted.SOLUTION: The substrate processing apparatus 22 that supplies a processing liquid to a substrate W arranged at a prescribed processing position and processes the substrate W with the supplied processing liquid includes the substrate elevation member 90 which is provided to lift and lower the substrate W between the processing position and upper position above the processing position, a placement portion 91b which is provided protruding upward from the substrate elevation member 90 and on which the substrate W to be lifted is placed, a top plate portion 110 which is provided to be elevated to above the substrate W arranged at the processing position and covers the substrate W from above in a lowered state, and a contact preventive portion 130 which is provided to the top plate portion 110 and prevents the placement 91b and top plate portion 110 from coming into contact with each other when the substrate elevation member 90 comes into contact with the top plate portion 110.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate using a processing liquid or a processing gas.

  In a semiconductor device manufacturing process or a flat panel display (FPD) manufacturing process, a processing liquid or a processing gas is supplied to a semiconductor wafer or glass substrate which is a substrate to be processed (hereinafter referred to as “substrate” or “wafer”). A substrate processing process for processing is frequently used.

  As one of such substrate processing processes, there is a substrate processing process in which a processing liquid is supplied to the back surface or the peripheral portion of the substrate and the substrate processing is performed on the back surface or the peripheral portion of the substrate with the supplied processing liquid.

  For example, in a manufacturing process of a semiconductor device or the like, a film forming process may be performed to form various thin films on the surface of the substrate. In the film forming process, a thin film may be formed not only on the surface of the substrate but also on the back surface or the peripheral edge of the substrate. It is preferable to remove the thin film formed on the back surface or the peripheral portion of the substrate because it may cause warpage of the substrate in the subsequent manufacturing process, for example, during heat treatment. Therefore, a substrate processing process may be performed in which the processing liquid is supplied to the back surface or the peripheral portion of the substrate, and the back surface or the peripheral portion of the substrate is etched by the supplied processing liquid.

  As a substrate processing apparatus that performs such a substrate processing process, a substrate processing apparatus that performs substrate processing on a lower surface and a peripheral portion of a substrate by supplying a processing liquid to the lower surface of the substrate is known (for example, patents). Reference 1). In the example shown in Patent Document 1, the substrate processing apparatus includes a support unit, a rotation drive unit, a substrate lifting member, a gas injection / suction unit, and a processing liquid supply unit. The support unit includes a support plate that supports the substrate from below while the substrate is at a predetermined processing position, and a rotating body that is coupled to the lower side of the support plate. The rotation drive unit rotates the support unit about an axis extending in the vertical direction. The substrate elevating member is provided so as to be movable up and down inside the rotating body of the support portion, and lift pins for delivering the substrate are provided on the upper surface thereof. The gas injection / suction unit includes a substantially disc-shaped base member (top plate) extending in a substantially horizontal direction, a support arm that supports the base member from above, and an elevating member provided at the base end of the support arm. The top plate covers the substrate at the processing position from above in the lowered state. The processing liquid supply unit has a processing liquid supply pipe provided inside the substrate elevating member, and the upper end of the processing liquid supply pipe faces upward in a lower region of the substrate placed above the support plate. Open.

JP 2009-147146 A

  However, the substrate processing apparatus for processing a substrate as described above has the following problems.

  In the normal substrate processing in the substrate processing apparatus as shown in Patent Document 1, the top plate is raised, and then the substrate lifting member is raised from the processing position to the upper position, and is provided inside or outside the substrate processing apparatus. The substrate is transferred from the transport mechanism to the substrate lifting member. Next, the substrate elevating member is lowered, and the transferred substrate is transferred to the support portion at the processing position, thereby loading the substrate. After the substrate is carried in, the top plate is lowered and the processing liquid is supplied to the substrate to perform processing. After the processing is completed, the substrate is operated in the reverse order to that at the time of loading, and the substrate is transferred from the support portion to the transport mechanism via the substrate lifting member. In the normal operation described above, the substrate elevating member is not brought into contact with the top plate because the elevating operation of the substrate elevating member in a state where the top plate is lowered is regulated by an interlock or the like, for example.

  However, when the lifting operation of the substrate elevating member is not regulated, such as when performing maintenance work on the substrate processing apparatus, the substrate elevating member is raised to the upper position while the top plate is lowered, etc. There is a possibility that the lift pin of the member contacts the lower surface of the top plate and the lift pin is damaged.

  In addition, when the lifting operation of the substrate lifting member is not regulated, the lift pins of the substrate lifting member may come into contact with the lower surface of the top plate, and the lift pins may be damaged. The same applies to a substrate processing apparatus that performs substrate processing.

  The present invention has been made in view of the above points, and when the raising / lowering operation of the substrate elevating member is not restricted, the lift pin can be lifted even if the substrate elevating member is raised to the upper position with the top plate lowered. Provided is a substrate processing apparatus capable of preventing damage to the substrate.

  In order to solve the above problems, the present invention is characterized by the following measures.

  According to one embodiment of the present invention, in a substrate processing apparatus for processing a substrate disposed at a predetermined processing position, the substrate is provided so as to be movable up and down between the processing position and a position above the processing position. A substrate raising / lowering member, a placement part on which the substrate to be raised / lowered is placed, and the substrate raising / lowering above the substrate disposed at the processing position. A top plate that covers the substrate from above in a lowered state, and is provided on the top plate, and when the substrate elevating member contacts the top plate. There is provided a substrate processing apparatus having a contact preventing part for preventing contact between the part and the top plate part.

  According to the present invention, it is possible to prevent the lift pins from being damaged even when the substrate elevating member is raised to the upper position while the top plate is lowered when the elevating operation of the substrate elevating member is not restricted.

It is a top view which shows schematic structure of the liquid processing system which concerns on embodiment. It is sectional drawing of the front side along the AA line of FIG. It is sectional drawing of the side surface along the BB line of FIG. It is a schematic sectional drawing which shows the structure of the liquid processing unit which concerns on embodiment. It is a perspective view of the rotation cup of the liquid processing unit which concerns on embodiment. It is the cross-sectional perspective view which expanded the board | substrate raising / lowering member vicinity of the liquid processing unit which concerns on embodiment. It is the section perspective view which looked at the top plate of the liquid processing unit concerning an embodiment from the slanting lower part. In the liquid processing unit which concerns on embodiment, it is sectional drawing to which the top plate and the board | substrate raising / lowering member vicinity were expanded in the state which the top plate and the board | substrate raising / lowering member lowered. In the liquid processing unit which concerns on embodiment, it is sectional drawing which expanded the top plate and the board | substrate raising / lowering member vicinity when a board | substrate raising / lowering member raises in the state which the top plate fell. In the liquid processing unit which concerns on the 1st modification of embodiment, it is sectional drawing which expanded the top plate and the board | substrate raising / lowering member vicinity when a board | substrate raising / lowering member raises in the state which the top plate fell. In the liquid processing unit which concerns on the 2nd modification of embodiment, it is sectional drawing which expanded the top plate and the board | substrate raising / lowering member vicinity when a board | substrate raising / lowering member raises in the state which the top plate fell. In the liquid processing unit which concerns on the 3rd modification of embodiment, it is sectional drawing which expanded the top plate and the board | substrate raising / lowering member vicinity when a board | substrate raising / lowering member raises in the state which the top plate fell.

Next, a mode for carrying out the present invention will be described with reference to the drawings. Here, a case where the present invention is applied to a substrate processing apparatus for performing back surface cleaning of a semiconductor wafer (hereinafter simply referred to as “wafer”) will be described.
(Embodiment)
First, a schematic configuration of a liquid processing system including a liquid processing unit according to an embodiment will be described with reference to FIGS. 1 to 3.

  The liquid processing unit corresponds to the substrate processing apparatus in the present invention.

  FIG. 1 is a plan view showing a schematic configuration of a liquid processing system 10 according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the front side along the line AA in FIG. 1, and FIG. It is sectional drawing of the side surface side along B line.

  In this liquid processing system 10, a wafer carrier C that houses a plurality of wafers W is placed, and a loading / unloading station (substrate loading / unloading unit) 1 for loading / unloading the wafers W and a cleaning process for the wafers W are performed. The processing station (liquid processing unit) 2 is provided. A loading / unloading station (substrate loading / unloading section) 1 and a processing station (liquid processing section) 2 are provided adjacent to each other.

  The carry-in / out station 1 includes a carrier placement unit 11, a transport unit 12, a delivery unit 13, and a housing 14. The carrier mounting unit 11 mounts a wafer carrier C that stores a plurality of wafers W in a horizontal state. The transfer unit 12 transfers the wafer W. The delivery unit 13 delivers the wafer W. The housing 14 accommodates the transport unit 12 and the transfer unit 13.

  The carrier mounting unit 11 can mount four wafer carriers C. The mounted wafer carrier C is in close contact with the vertical wall portion 12a of the housing 14, and the wafer W therein can be carried into the transfer portion 12 without being exposed to the atmosphere.

  The housing 14 includes a partition member 14 a that partitions the transport unit 12 and the transfer unit 13 vertically. The transport unit 12 includes a transport mechanism 15 and a fan filter unit (FFU) 16 that supplies clean air downflow provided above the transport mechanism 15. The transfer mechanism 15 includes a wafer holding arm 15a that holds the wafer W and a mechanism that moves the wafer holding arm 15a back and forth. The transport mechanism 15 is moved along a horizontal guide 17 (see FIG. 1) extending in the X direction which is the arrangement direction of the wafer carriers C, and a vertical guide 18 (see FIG. 2) provided in the vertical direction. It has a mechanism to move along and a mechanism to rotate in a horizontal plane. The wafer W is transferred between the wafer carrier C and the delivery unit 13 by the transfer mechanism 15.

  The delivery unit 13 includes a delivery stage 19 and a delivery shelf 20 including a plurality of placement units on which wafers W provided thereon can be placed. The delivery unit 13 delivers the wafer W to and from the processing station 2 via the delivery shelf 20.

  As shown in FIG. 3, the processing station 2 has a casing 21 having a rectangular parallelepiped shape. The processing station 2 includes a transfer chamber 21a that forms a transfer path extending in the Y direction perpendicular to the X direction, which is the arrangement direction of the wafer carriers C, in the upper portion of the casing 21, and both sides of the transfer chamber 21a. Have two unit chambers 21b and 21c. In the unit chambers 21b and 21c, a total of twelve liquid processing units 22 are arranged horizontally along the transfer chamber 21a.

  Below the unit chambers 21 b and 21 c in the housing 21, drive areas 21 d and 21 e that accommodate the drive systems of the respective liquid processing units 22 are provided. In addition, under the drive areas 21d and 21e, pipe boxes 21f and 21g, respectively, containing pipes are provided. In addition, under the piping boxes 21f and 21g, chemical solution supply units 21h and 21i are provided as processing solution storage units, respectively. On the other hand, an exhaust space 21j for exhaust is provided below the transfer chamber 21a.

  A fan filter unit (FFU) 23 is provided above the transfer chamber 21a to supply a downflow of clean air to the transfer chamber 21a. A transfer mechanism 24 is provided inside the transfer chamber 21a. The transport mechanism 24 includes a wafer holding arm 24a that holds the wafer W and a mechanism that moves the wafer holding arm 24a back and forth. Further, the transfer mechanism 24 moves along a horizontal guide 25 (see FIG. 1) provided in the transfer chamber 21a in the Y direction, and moves along a vertical guide 26 (see FIG. 3) provided in the vertical direction. And a mechanism for rotating in a horizontal plane. The transport mechanism 24 carries the wafer W in and out of each liquid processing unit 22.

  The delivery stage 19 is provided at a position higher than the carrier placement unit 11, and the liquid processing unit 22 is provided at a position higher than the delivery stage 19.

  A treatment liquid piping group 30, a drainage piping group 31, and an exhaust piping group 32 are horizontally arranged in the piping boxes 21f and 21g. The treatment liquid pipe group 30 is supplied with, for example, an SC1 pipe 30a for supplying ammonia overwater SC1 formed by mixing ammonia water and hydrogen peroxide, a DHF pipe 30b for supplying dilute hydrofluoric acid (DHF), and supplying pure water. It has a pure water pipe 30c. Further, the drainage pipe group 31 includes, for example, a drainage pipe 31a for discharging the drainage and a recovery pipe 31b for recovering the drainage. Further, the exhaust pipe group 32 includes, for example, an acid exhaust pipe 32a for exhausting acid and an alkali exhaust pipe 32b for exhausting alkali.

  The chemical solution supply unit 21h includes a first chemical solution tank 41 that is provided on the carry-in / out station 1 side and stores, for example, ammonia-hydrogenated water SC1 and a first recovery tank 42 adjacent thereto.

  As shown in FIG. 2, the first chemical tank 41 is connected with a delivery pipe 43 for delivering the chemical liquid and a return pipe 44 for returning the chemical liquid. The delivery pipe 43 is connected to one end side of the SC1 pipe 30a of the treatment liquid pipe group 30 disposed horizontally in the pipe box 21f. The return pipe 44 is connected to the other end side of the SC1 pipe 30a.

  A chemical solution supply pipe 51 is connected to the upper part of the first chemical solution tank 41, and a mixer 52 is connected to the chemical solution supply pipe 51. A pure water pipe 53, an ammonia pipe 54, and a hydrogen peroxide pipe 55 are connected to the mixer 52. In the mixer 52, pure water, ammonia, and hydrogen peroxide are mixed, and the ammonia overwater SC1 is the first. The chemical liquid tank 41 is supplied. The pure water pipe 53 is provided with a liquid flow controller (LFC) 56a and a valve 56b. The ammonia pipe 54 is provided with a liquid flow controller (LFC) 57a and a valve 57b. The hydrogen peroxide pipe 55 is provided with a liquid flow controller (LFC) 58a and a valve 58b.

  The chemical solution supply unit 21h is provided with a first recovery tank 42 that is connected to the recovery pipe 31b of the drainage pipe group 31 and collects the processed chemical liquid. The first recovery tank 42 and the first chemical liquid tank 41 are connected by a connection pipe 46, and after the recovered chemical liquid is cleaned, it can be returned to the first chemical liquid tank 41.

  On the other hand, the chemical solution supply unit 21i is provided on the carry-in / out station 1 side, for example, a second chemical solution tank 47 (see FIG. 3) for storing dilute hydrofluoric acid (DHF) and a second recovery tank (not shown) adjacent thereto. ). The DHF in the second chemical liquid tank 47 can be circulated and supplied by the DHF piping 30b in the piping boxes 21f and 21g and the like, similarly to SC1 from the first chemical liquid tank 41. Further, the recovery of DHF to the second recovery tank is performed in the same manner as the recovery of SC1 to the first recovery tank 42 through the pipe 48 (see FIG. 2).

  In addition to these chemical cleaning, rinsing and drying with pure water are performed. At this time, pure water is supplied from a pure water supply source (not shown) through the pure water pipe 30c.

  Of the drainage pipe group 31 provided in the pipe boxes 21f and 21g, a drain pipe 49 is connected to the drainage pipe 31a. The drainage from the drainage pipe 31a passes through the drain pipe 49 and is discarded to the factory pipe under the floor as a drain.

  Next, a substrate processing apparatus which is a liquid processing unit mounted on the liquid processing system according to the present embodiment will be described with reference to FIGS. FIG. 4 is a schematic cross-sectional view showing the configuration of the liquid processing unit 22 according to the present embodiment. FIG. 5 is a perspective view of the rotating cup 71 of the liquid processing unit 22 according to the present embodiment. FIG. 6 is an enlarged cross-sectional perspective view of the vicinity of the substrate lifting member 90 of the liquid processing unit 22 according to the present embodiment. FIG. 7 is a cross-sectional perspective view of the top plate 110 of the liquid processing unit 22 according to the present embodiment as viewed obliquely from below. FIG. 8 is an enlarged cross-sectional view of the vicinity of the top plate 110 and the substrate lifting member 90 with the top plate 110 and the substrate lifting member 90 lowered in the liquid processing unit 22 according to the present embodiment.

  As shown in FIG. 4, the liquid processing unit 22 includes a rotating plate 60, an enclosure member 70, a rotating cup 71, a rotation driving unit 80, a substrate lifting / lowering member 90, a processing liquid supply mechanism 93, a dry gas supply mechanism 95, an exhaust / discharge unit. The liquid part (cup) 100, the top plate 110, the elevating mechanism 120, the inert gas supply mechanism 123, and the contact prevention part 130 are provided.

  The top plate 110 corresponds to the top plate portion in the present invention.

  As shown in FIGS. 4 and 5, the rotating plate 60 has a base plate 61 and a rotating shaft 62. The base plate 61 is provided horizontally and has a circular hole 61a in the center. The rotating shaft 62 is provided so as to extend downward from the base plate 61, and has a cylindrical shape with a hole 62a provided at the center.

  As shown in FIGS. 4 and 5, the surrounding member 70 is provided outside the periphery of the wafer W so as to surround the periphery of the wafer W over the entire periphery. The surrounding member 70 guides the processing liquid that has processed the wafer W to the draining cup 101. Further, the surrounding member 70 has a support pin 72. The support pin 72 is provided so as to protrude inward from the lower end of the surrounding member 70. The support pins 72 support the lower surface of the peripheral edge of the wafer W. Further, as shown in FIG. 5, a plurality of support pins 72 are provided at substantially equal intervals along the circumferential direction of the wafer W.

  The position where the wafer W is supported by the support pins 72 is a predetermined processing position where the processing liquid is supplied to the wafer W and the wafer W is processed with the supplied processing liquid.

  The rotating cup 71 is for preventing the processing liquid supplied to the lower surface side of the wafer W and splashing from the rotating wafer W to the outer peripheral side from being bounced back to the wafer W again. Further, the processing liquid that scatters from the rotating wafer W to the outer peripheral side does not enter the upper surface side of the wafer W.

  As shown in FIG. 4, the base plate 61, the enclosure member 70, and the rotary cup 71 are fastened by fitting a fastening member 74 into a hole 73 formed so as to penetrate each of them. Thereby, the base plate 61, the surrounding member 70, and the rotation cup 71 are rotatably provided as a unit.

  The rotation drive unit 80 includes a pulley 81, a drive belt 82, and a motor 83. The pulley 81 is disposed outside the peripheral edge on the lower side of the rotation shaft 62. The drive belt 82 is wound around the pulley 81. The motor 83 is connected to the drive belt 82, and rotates the rotary shaft 62 via the pulley 81 by transmitting a rotational driving force to the drive belt 82. That is, the rotation drive unit 80 rotates the base plate 61, the enclosure member 70, and the rotation cup 71 by rotating the rotation shaft 62. A bearing 63 is disposed on the outer periphery of the rotating shaft 62.

  As shown in FIGS. 4 to 6, the substrate elevating member 90 is provided so as to be movable up and down in the hole 61 a of the base plate 61 and the hole 62 a of the rotating shaft 62, and includes a lift pin plate 91 and a lift shaft 92. The lift shaft 92 extends downward from the lift pin plate 91. The lift pin plate 91 has a plurality of, for example, three lift pins 91b on the periphery of the upper surface 91a. A cylinder mechanism 92a is connected to the lower end of the lift shaft 92, and the wafer lifting / lowering member 90 is moved up and down by the cylinder mechanism 92a to load and unload the wafer W. The lift pin plate 91 and the lift shaft 92 are provided with a processing liquid supply pipe 94 and a gas supply pipe 96 at the center.

  The lift pin 91b corresponds to the placement portion in the present invention. Further, instead of the lift pins 91b, various protrusion-shaped members provided so as to protrude upward from the lift pin plate 91 can be used.

  Further, as indicated by a solid line in FIG. 4, when both the substrate elevating member 90 and the top plate 110 are lowered, the lower surface of the top plate 110 is lower than the upper surface of the exhaust / drainage part (cup) 100. Is located. 4, when the substrate lifting member 90 and the top plate 110 are both raised, the upper end of the substrate lifting member 90 is higher than the upper surface of the exhaust / drainage unit (cup) 100. It is above and is in a delivery position for delivering the wafer W. Therefore, as will be described later, when the lifting operation of the substrate lifting member 90 is not restricted, when the substrate lifting member 90 is raised to the upper position while the top plate 110 is lowered, the substrate lifting member 90 is at the top. Contact the plate 110.

  The processing liquid supply mechanism 93 has a processing liquid supply pipe 94. As described above, the processing liquid supply pipe 94 is provided inside the lift pin plate 91 and the lift shaft 92 so as to extend in the vertical direction. The processing liquid supply pipe 94 guides the processing liquid supplied from each pipe of the processing liquid pipe group 30 to the lower surface side of the wafer W. The processing liquid supply pipe 94 communicates with a processing liquid supply port 94 a formed on the upper surface 91 a of the lift pin plate 91.

  The dry gas supply mechanism 95 has a dry gas supply pipe 96. As described above, the dry gas supply pipe 96 is provided inside the lift pin plate 91 and the lift shaft 92 so as to extend in the vertical direction. The dry gas supply pipe 96 is supplied from a dry gas supply source 97 and sprays a dry gas such as an inert gas for drying the wafer W onto the lower surface side of the wafer W. The dry gas supply pipe 96 communicates with a dry gas supply port 96 a formed on the upper surface 91 a of the lift pin plate 91. The dry gas supply port 96a may be a dry gas supply nozzle 96b provided so as to protrude upward from the upper surface 91a of the lift pin plate 91, as shown in FIGS. The dry gas supply nozzle 96b has a disk shape, and a discharge port 96c is formed on the peripheral side surface so that the dry gas can be supplied along the circumferential direction of the wafer W supported by the support pins 72. Yes. Further, the dry gas supply nozzle 96 b may be provided at the center of the upper surface 91 a of the lift pin plate 91.

  The exhaust / drainage unit (cup) 100 includes a drainage cup 101, a drainage pipe 102, an exhaust cup 103, and an exhaust pipe 104. The exhaust / drainage part (cup) 100 has an opening 105 on the upper surface. The exhaust / drainage part (cup) 100 is mainly for recovering the gas and liquid discharged from the space surrounded by the rotary plate 60 and the rotary cup 71.

  The drainage cup 101 receives the processing liquid guided by the rotating cup 71. The drainage pipe 102 is connected to the outermost part of the bottom of the drainage cup 101, and discharges the processing liquid received by the drainage cup 101 through any pipe of the drainage pipe group 31. The exhaust cup 103 is provided outside or below the drain cup 101 so as to communicate with the drain cup 101. FIG. 4 shows an example in which the exhaust cup 103 is provided so as to communicate with the drain cup 101 at the inner periphery and below the drain cup 101. The exhaust pipe 104 is connected to the outermost part of the bottom of the exhaust cup 103, and exhausts a gas such as nitrogen gas in the exhaust cup 103 through any one of the exhaust pipe group 32.

  The top plate 110 can be moved up and down, and is provided so as to block the opening 105 provided on the upper surface of the exhaust / drainage part (cup) 100 in the lowered state. The top plate 110 is provided so as to cover the wafer W supported by the support pins 72 from above when the opening 105 provided on the upper surface of the exhaust / drainage part (cup) 100 is closed. As described above, the position where the wafer W is supported by the support pins 72 is a predetermined processing position where the processing liquid is supplied to the wafer W and the wafer W is processed by the supplied processing liquid. Accordingly, the top plate 110 is provided so that the wafer W covers the wafer W placed at a predetermined processing position from above.

  The top plate 110 has a gap forming member 113 that protrudes downward from the lower surface 112 of the top plate 110 in a region 111 facing the peripheral edge of the wafer W supported by the support pins 72 of the enclosure member 70. It may be. The gap forming member 113 forms a gap D1 with the peripheral edge of the wafer W.

  When the gap forming member 113 is formed on the top plate 110, the gap D1 between the peripheral edge of the wafer W supported by the support pins 72 of the surrounding member 70 and the top plate 110 is the center of the wafer W and the top plate. It becomes smaller than the distance D0 with 110.

  The top plate 110 is provided with a contact prevention unit 130 described later.

  The elevating mechanism 120 includes an arm 121 and an elevating drive unit 122. The raising / lowering drive part 122 is provided outside the exhaust / drainage part (cup) 100 and can move up and down. The arm 121 is provided so as to connect the top plate 110 and the elevation drive unit 122. That is, the elevating mechanism 120 moves the top plate 110 up and down by the elevating drive unit 122 via the arm 121.

  The inert gas supply mechanism 123 includes an inert gas supply pipe 124 and an inert gas supply source 125. The inert gas supply mechanism 123 is for supplying an inert gas such as nitrogen gas or argon gas to the upper surface side of the wafer W. The inert gas supply pipe 124 is provided so as to extend inside the top plate 110 and the arm 121. One end of the inert gas supply pipe 124 is connected to an inert gas supply source 125 that supplies an inert gas. The inert gas supply pipe 124 forms an inert gas supply port 124 a at the center of the lower surface 112 of the top plate 110.

  As shown in FIG. 4, the arm 121 may be connected at the approximate center of the top surface of the top plate 110. As a result, the inert gas supply port 124a is formed at the center of the lower surface 112 of the top plate 110, so that the inert gas can be supplied downward from the center of the top plate 110 and supplied to the wafer W. The flow rate of the inert gas can be made uniform along the circumferential direction.

  Next, the contact prevention unit 130 will be described with reference to FIGS. 4, 7, and 8.

  As illustrated in FIG. 7, the contact prevention unit 130 includes a convex portion 131 and a concave portion 132. The convex portion 131 and the concave portion 132 are formed on the lower surface 112 of the top plate 110. That is, the contact prevention unit 130 is provided on the top plate 110.

  As described above, in the present embodiment, the substrate elevating member 90 includes the dry gas supply nozzle 96 b provided on the upper surface 91 a of the lift pin plate 91 so as to protrude from the upper surface 91 a of the lift pin plate 91. Therefore, as shown in FIG. 8, the convex portion 131 is formed on a lower surface 112 of the top plate 110 in a region other than the region facing the lift pin 91b or the drying gas supply nozzle 96b. The convex portion 131 is provided so as to protrude downward from the lower surface 112 of the top plate 110. Then, the protrusion 131 is in contact with a portion other than the lift pin 91b of the lift pin plate 91 and a portion other than the dry gas supply nozzle 96b when the substrate elevating member 90 contacts the top plate 110. , Provided.

  A dry gas supply nozzle 96 b is formed to protrude from the upper surface 91 a of the lift pin plate 91. Therefore, the convex part 131 may be formed in the area | region other than the area | region which is the lower surface 112 of the top plate 110, and opposes the lift pin 91b. In addition, a recessed portion 131b that is recessed upward from the lower surface 131a of the convex portion 131 may be formed in a lower surface 131a of the convex portion 131 and in a region facing the dry gas supply nozzle 96b, that is, a central region. At this time, as will be described later, the height of the bottom surface 131c of the recess 131b only needs to be provided so as not to contact the dry gas supply nozzle 96b, and is different from the height of the lower surface 112 of the top plate 110. It may be.

  Instead of the dry gas supply nozzle 96b, a processing liquid supply nozzle for supplying a processing liquid may be provided so as to protrude upward from the upper surface 91a of the lift pin plate 91. In that case, the convex 131 is formed on the lower surface 112 of the top plate 110 in a region other than the region facing the lift pin 91b or facing the processing liquid supply nozzle. And the convex part 131 is a part other than the lift pin 91b of the lift pin plate 91 and the part other than the processing liquid supply nozzle when the substrate elevating member 90 comes into contact with the top plate 110. Is provided.

  Moreover, as shown in FIG. 8, the recessed part 132 is formed in the area | region which is the lower surface 112 of the top plate 110, and opposes the lift pin 91b. The recess 132 is provided so as to be recessed upward from the lower surface 112 of the top plate 110. The concave portion 132 is provided so that the convex portion 131 of the top plate 110 contacts a portion other than the lift pins 91 b of the lift pin plate 91 when the substrate elevating member 90 contacts the top plate 110.

  In the example shown in FIG. 8, the height of the lift pin 91b from the upper surface 91a of the lift pin plate 91 is HA. The height of the dry gas supply nozzle 96b from the upper surface 91a of the lift pin plate 91 is HB. However, in order to prevent the wafer W and the dry gas supply nozzle 96b from contacting each other when the wafer W is placed on the lift pins 91b, the relationship of HB <HA is satisfied. Further, the height of the protrusion 131 from the lower surface 112 of the top plate 110 is H1. And the depth of the recessed part 132 from the lower surface 112 of the top plate 110 is set to H2. At this time, H1 and H2 may be determined so that the relationship of HB <H1 <HA <H1 + H2 is satisfied.

  Further, as described above, the convex 131 may be formed in a region other than the region facing the lift pin 91b on the lower surface 112 of the top plate 110. A depression 131b that is recessed upward from the lower surface 131a of the protrusion 131 may be formed in a region of the lower surface 131a of the protrusion 131 that faces the dry gas supply nozzle 96b. At this time, if the depth of the depression 131b is H3, H3 may be determined so that H3> HB is satisfied. In FIG. 8, the position of the bottom surface 131 c in the case where the depression 131 b is formed is indicated by a dotted line I.

  Moreover, the liquid processing system 10 has the control part 200, as shown in FIG. The control unit 200 includes a process controller 201 composed of a microprocessor (computer), and each component of the liquid processing system 10 is connected to the process controller 201 to be controlled. In addition, the process controller 201 visualizes the operation status of each component of the liquid processing system 10 and a keyboard on which a process manager inputs commands to manage each component of the liquid processing system 10. A user interface 202 including a display for displaying is connected. Further, the process controller 201 has a control program for realizing various processes executed by the liquid processing system 10 under the control of the process controller 201 and predetermined components in the liquid processing system 10 according to processing conditions. A storage unit 203 in which a control program for executing processing, that is, a recipe is stored, is connected. The recipe is stored in a storage medium (recording medium) in the storage unit 203. The storage medium (recording medium) may be a hard disk or a semiconductor memory. Moreover, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example.

  Then, if necessary, an arbitrary recipe is called from the storage unit 203 by an instruction from the user interface 202 and is executed by the process controller 201, so that a desired process in the liquid processing system 10 can be performed under the control of the process controller 201. Is performed.

  Next, a substrate processing process using the liquid processing unit 22 will be described.

  First, one wafer W is taken out from the wafer carrier C mounted on the carrier mounting unit 11 of the loading / unloading station 1 by the wafer holding arm 15a of the transfer mechanism 15, and the mounting unit of the transfer shelf 20 on the transfer stage 19 is loaded. Placed on. This operation is continuously performed. The wafers W placed on the placement unit of the delivery shelf 20 are sequentially carried by the wafer holding arm 24a of the carrying mechanism 24 of the processing station 2 and are carried into one of the liquid processing units 22.

  When the wafer W is carried into the liquid processing unit 22, the top plate 110 is raised by the elevating mechanism 120 (position indicated by a dotted line in FIG. 4). Then, the wafer W carried into the liquid processing unit 22 is placed on the lift pins 91b of the lift pin plate 91 positioned at the delivery position (upper position) by the cylinder mechanism 92a (position indicated by the dotted line in FIG. 4). .

  Next, the lift pin plate 91 is moved downward by the cylinder mechanism 92a and positioned at the wafer processing position. While the lift pin plate 91 is moved downward, the lower surface of the wafer W is supported by the support pins 72 provided on the enclosure member 70.

  Next, when the rotary shaft 62 is rotationally driven by the rotary drive unit 80, the base plate 61 and the rotary cup 71 are rotated. Specifically, the rotating shaft 62 is rotationally driven by applying a driving force from the motor 83 to the pulley 81 via the driving belt 82. As a result, the wafer W on the support pins 72 provided on the enclosure member 70 rotates.

  At this time, the processing liquid is supplied to the lower surface of the wafer W from one of the processing liquid piping group 30 via the processing liquid supply pipe 94 of the processing liquid supply mechanism 93. Then, as shown in FIG. 4, the processing liquid supplied to the lower surface of the wafer W is moved outward from the periphery by a centrifugal force generated by the rotation of the wafer W. As the treatment liquid at this time, as described above, for example, either or both of SC1 and DHF are used.

  On the other hand, as shown in FIG. 4, an inert gas such as nitrogen gas is supplied to the upper surface of the wafer W from an inert gas supply port 124 a provided at the center of the lower surface 112 of the top plate 110. The supplied inert gas passes through the upper surface of the wafer W, then passes through the gap D1 between the wafer W and the gap forming member 113 of the top plate 110, and wraps around from the upper side of the enclosure member 70 to the outer periphery and further downward. The exhaust / drainage part (cup) 100 flows from the exhaust cup 103 to the exhaust pipe 104. Due to the flow of the inert gas, the processing liquid that has reached the peripheral edge of the wafer W wraps around the upper surface of the wafer W from between the wafer W and the enclosure member 70 or between the enclosure member 70 and the rotating cup 71. Can be prevented.

  When the substrate processing process using the processing liquid as described above is completed, the supply of the processing liquid from one of the processing liquid piping group 30 to the wafer W via the processing liquid supply pipe 94 of the processing liquid supply mechanism 93 is stopped. Is done. Then, pure water is supplied to the wafer W from the pure water pipe 30 c of the processing liquid pipe group 30 through the processing liquid supply pipe 94 of the processing liquid supply mechanism 93 to perform pure water rinsing.

  Further, in the above-described substrate processing process, the used processing liquid reaches the drainage pipe group 31 from the drainage cup 101, and a part of the acid and alkali is recovered and the other is discarded. Further, the gas component generated in the process reaches the exhaust pipe group 32 from the exhaust cup 103 and is exhausted.

  Next, the rotating shaft 62 is rotated at a high speed by the rotation driving unit 80. As a result, the wafer W on the support pins 72 is rotated at a high speed. At the same time, the drying gas is discharged from the drying gas supply nozzle 96 b and sprayed to the lower surface of the wafer W. Thereby, the wafer W is dried. Thereafter, the motor 83 of the rotation driving unit 80 is stopped, and the rotation of the wafer W on the support pins 72 is also stopped.

  Next, the top plate 110 is positioned above the delivery position of the wafer W by the lifting mechanism 120 (position indicated by a dotted line in FIG. 4). Thereafter, the lift pin plate 91 is moved to the upper position by the cylinder mechanism 92a, and the wafer W rises to the delivery position (upper position) (position indicated by the dotted line in FIG. 4).

  Next, the wafer W is unloaded from the lift pin plate 91 by the wafer holding arm 24 a of the transfer mechanism 24. In this way, processing of one wafer W is completed.

  The wafer W unloaded in this manner is unloaded from the liquid processing unit 22 by the wafer holding arm 24a of the transfer mechanism 24, placed on the transfer shelf 20 of the transfer stage 19, and held by the transfer mechanism 15 from the transfer shelf 20. It is returned to the wafer carrier C by the arm 15a.

  Next, referring to FIGS. 8 and 9, when the raising / lowering operation of the substrate elevating member 90 is not restricted, the lift pin can be lifted even if the substrate elevating member 90 is raised to the upper position with the top plate 110 lowered. The effect | action which can prevent damaging 91b is demonstrated. FIG. 9 is an enlarged cross-sectional view of the vicinity of the top plate 110 and the substrate elevating member 90 when the substrate elevating member 90 is raised while the top plate 110 is lowered in the liquid processing unit 22 according to the present embodiment. .

  In the operation of the normal substrate processing process described above, the substrate elevating member 90 is in contact with the top plate 110 because the elevating operation of the substrate elevating member 90 in a state where the top plate 110 is lowered is regulated by, for example, an interlock or the like. Never do.

  On the other hand, when the lifting operation of the substrate lifting member 90 is not restricted, such as when performing maintenance work on the liquid processing system 10 or the liquid processing unit 22, the substrate lifting member 90 is moved to the upper position with the top plate 110 lowered. There is a case where an operation of raising the speed is performed.

  In the present embodiment, as described above, the relationship of HB <H1 <HA <H1 + H2 is satisfied. Therefore, when the substrate elevating member 90 is raised to the delivery position with the transfer mechanism 24 for the wafer W while the top plate 110 is lowered (when the substrate elevating member 90 contacts the top plate 110), as shown in FIG. Further, the convex portion 131 of the top plate 110 is in contact with a portion other than the lift pin 91b of the lift pin plate 91 and a portion other than the dry gas supply nozzle 96b. However, the upper end of the lift pin 91b does not contact the bottom surface 132a of the recess 132 of the top plate 110. Further, the upper end of the dry gas supply nozzle 96b and the lower surface 112 of the top plate 110 are not in contact with each other. This is because there is still a gap of H1 + H2−HA (> 0) between the upper end of the lift pin 91b and the bottom surface 132a of the recess 132 of the top plate 110 when the protrusion 131 contacts the lift pin plate 91. Further, there is still a gap of H1-HB (> 0) between the upper end of the dry gas supply nozzle 96b and the lower surface 112 of the top plate 110.

  Further, as shown by the dotted line I in FIG. 9, when the depression 131b having the depth H3 is formed, the portion other than the depression 131b of the protrusion 131 of the top plate 110 is The lift pin plate 91 is in contact with a portion other than the dry gas supply nozzle 96b. However, the upper end of the dry gas supply nozzle 96b does not contact the bottom surface 131c of the recess 131b. This is because there is a gap of H3-HB (> 0) between the upper end of the dry gas supply nozzle 96b and the bottom surface 131c of the recess 131b.

  As described above, according to the present embodiment, the lower surface 112 of the top plate 110 is located in a region other than the region facing the lift pin 91b or facing the dry gas supply nozzle 96b (or the processing liquid supply nozzle). A convex portion 131 is formed, and a concave portion 132 is formed in a region of the lower surface 112 of the top plate 110 facing the lift pin 91b. Thereby, even if the board | substrate raising / lowering member 90 approaches the top plate 110, when the convex part 131 of the top plate 110 contacts the lift pin plate 91, the contact with the lift pin 91b and the top plate 110 can be prevented. Therefore, even when the substrate elevating member 90 is raised to the upper position while the top plate 110 is lowered when the elevating operation of the substrate elevating member 90 is not restricted, it is possible to prevent the lift pins 91b from being damaged.

In the present embodiment, the example in which the substrate processing apparatus of the present invention is applied to a liquid processing unit that supplies a processing liquid to the wafer W and processes the wafer W with the supplied processing liquid has been described. However, the substrate processing apparatus according to the present invention is also applicable to a substrate processing unit that supplies a processing gas such as ozone gas instead of the processing liquid to the wafer W and processes the wafer W with the supplied processing gas. At this time, the substrate processing unit has the same configuration as the drying gas supply mechanism 95 described with reference to FIG. 4 instead of the processing liquid supply mechanism 93, and supplies a processing gas instead of the drying gas. Should be provided.
(First Modification of Embodiment)
Next, a liquid processing unit according to a first modification of the embodiment of the present invention will be described with reference to FIG. FIG. 10 is an enlarged cross-sectional view of the vicinity of the top plate 110a and the substrate lifting member 90 when the substrate lifting member 90 is lifted with the top plate 110a lowered in the liquid processing unit according to this modification.

  In the following description, the same parts as those described with reference to FIG. 9 in the embodiment are denoted by the same reference numerals in FIG. 10 and description thereof is omitted (the same applies to the following modified examples).

  The liquid processing unit according to the present modification is different from the liquid processing unit 22 according to the embodiment in that the concave portion is not formed on the lower surface 112 of the top plate 110a and the contact preventing portion 130a does not include the concave portion.

  Also in this modification, the liquid processing system 10 according to the embodiment described with reference to FIGS. 1 to 3 can be used. The liquid processing unit according to this modification is the same as the liquid processing unit 22 according to the embodiment described with reference to FIG. 4 except that a recess is not formed on the lower surface 112 of the top plate 110a described later. is there.

  On the other hand, in this modified example, as shown in FIG. 10, the contact prevention unit 130 a does not have a concave portion but has a convex portion 131. The substrate elevating member 90 includes a dry gas supply nozzle 96 b provided on the upper surface 91 a of the lift pin plate 91 so as to protrude from the upper surface 91 a of the lift pin plate 91. Therefore, as shown in FIG. 10, the convex portion 131 is formed on the lower surface 112 of the top plate 110a in a region other than the region facing the lift pin 91b or the region facing the dry gas supply nozzle 96b. The protrusion 131 is provided so as to protrude downward from the lower surface 112 of the top plate 110a. Then, the convex portion 131 is in contact with a portion other than the lift pin 91b of the lift pin plate 91 and a portion other than the dry gas supply nozzle 96b when the substrate elevating member 90 contacts the top plate 110a. , Provided. Further, instead of the dry gas supply nozzle 96b, a processing liquid supply nozzle may be provided so as to protrude upward from the upper surface 91a of the lift pin plate 91.

  Also in the example shown in FIG. 10, the height of the lift pin 91b from the upper surface 91a of the lift pin plate 91 is HA. The height of the dry gas supply nozzle 96b from the upper surface 91a of the lift pin plate 91 is HB. However, in order to prevent the wafer W and the dry gas supply nozzle 96b from coming into contact with each other when the wafer W is placed on the lift pins 91b, the relationship of HB <HA is satisfied. Further, the height of the convex portion 131 from the lower surface 112 of the top plate 110a is H1. At this time, H1 may be determined so that the relationship of H1> HA (> HB) is satisfied.

  When the above relationship is satisfied, when the substrate elevating member 90 is raised to the delivery position with the transfer mechanism 24 for the wafer W while the top plate 110a is lowered (the substrate elevating member 90 contacts the top plate 110a). 10), the protrusion 131 of the top plate 110a contacts a portion other than the lift pin 91b of the lift pin plate 91 and a portion other than the dry gas supply nozzle 96b. However, the upper end of the lift pin 91b does not contact the lower surface 112 of the top plate 110a. Further, the upper end of the dry gas supply nozzle 96b does not contact the lower surface 112 of the top plate 110a. This is because there is a gap of H1-HA (> 0) between the upper end of the lift pin 91b and the lower surface 112 of the top plate 110a when the convex portion 131 contacts the lift pin plate 91. Moreover, there is still a gap of H1-HB (> 0) between the upper end of the dry gas supply nozzle 96b and the lower surface 112 of the top plate 110a.

  As described above, according to this modification, the lower surface 112 of the top plate 110a protrudes in a region other than the region facing the lift pin 91b or facing the dry gas supply nozzle 96b (or the treatment liquid supply nozzle). A portion 131 is formed. Thereby, even if the board | substrate raising / lowering member 90 approaches the top plate 110a, when the convex part 131 of the top plate 110a contacts the lift pin plate 91, the contact with the lift pin 91b and the top plate 110a can be prevented. Therefore, even when the substrate elevating member 90 is raised to the upper position with the top plate 110a lowered when the elevating operation of the substrate elevating member 90 is not restricted, the lift pins 91b can be prevented from being damaged.

In this modification, the example in which the substrate processing apparatus according to the present invention is applied to a liquid processing unit that supplies a processing liquid to the wafer W and processes the wafer W with the supplied processing liquid has been described. However, the substrate processing apparatus according to the present invention is also applicable to a substrate processing unit that supplies a processing gas such as ozone gas instead of the processing liquid to the wafer W and processes the wafer W with the supplied processing gas.
(Second modification of the embodiment)
Next, a liquid processing unit according to a second modification of the embodiment of the present invention will be described with reference to FIG. FIG. 11 is an enlarged cross-sectional view of the vicinity of the top plate 110b and the substrate elevating member 90 when the substrate elevating member 90 is raised while the top plate 110b is lowered in the liquid processing unit according to this modification.

  The liquid processing unit according to this modification is different from the liquid processing unit 22 according to the embodiment in that the dry gas supply nozzle is not formed to protrude from the upper surface 91a of the lift pin plate 91.

  Also in this modification, the liquid processing system 10 according to the embodiment described with reference to FIGS. 1 to 3 can be used. Further, the liquid processing unit according to the present modification also has the liquid processing unit 22 according to the embodiment described with reference to FIG. 4 except that the dry gas supply nozzle is not formed to protrude from the upper surface 91a of the lift pin plate 91. It is the same.

  On the other hand, in this modified example, as shown in FIG. 11, the contact prevention unit 130 b includes a convex portion 131 and a concave portion 132. The substrate elevating member 90 does not include a dry gas supply nozzle provided on the upper surface 91a of the lift pin plate 91 so as to protrude from the upper surface 91a of the lift pin plate 91. Therefore, as shown in FIG. 11, the convex 131 is formed in a region other than the region facing the lift pin 91b on the lower surface 112 of the top plate 110b. The protrusion 131 is provided so as to protrude downward from the lower surface 112 of the top plate 110b. And the convex part 131 is provided so that it may contact parts other than the lift pin 91b of the lift pin plate 91, when the board | substrate raising / lowering member 90 contacts the top plate 110b.

  Also in the example shown in FIG. 11, the height of the lift pin 91b from the upper surface 91a of the lift pin plate 91 is HA. Further, the height of the protrusion 131 from the lower surface 112 of the top plate 110b is H1. And the depth of the recessed part 132 from the lower surface 112 of the top plate 110b is set to H2. At this time, H1 and H2 may be determined so that the relationship of H1 <HA <H1 + H2 is satisfied.

  When the above relationship is satisfied, when the substrate elevating member 90 is raised to the delivery position with the transfer mechanism 24 of the wafer W while the top plate 110b is lowered (the substrate elevating member 90 contacts the top plate 110b). 11), as shown in FIG. 11, the convex portion 131 of the top plate 110 b comes into contact with a portion other than the lift pin 91 b of the lift pin plate 91. However, the upper end of the lift pin 91b does not contact the bottom surface 132a of the recess 132 of the top plate 110b. This is because there is still a gap of H1 + H2−HA (> 0) between the upper end of the lift pin 91b and the bottom surface 132a of the recess 132 of the top plate 110b when the convex portion 131 contacts the lift pin plate 91.

  As described above, according to the present modification, the convex portion 131 is formed on the lower surface 112 of the top plate 110b other than the region facing the lift pin 91b, and the lower surface 112 of the top plate 110b is opposed to the lift pin 91b. A recess 132 is formed in the region to be processed. Thereby, even if the board | substrate raising / lowering member 90 approaches the top plate 110b, when the convex part 131 of the top plate 110b contacts the lift pin plate 91, the contact with the lift pin 91b and the top plate 110b can be prevented. Therefore, even if the substrate elevating member 90 is raised to the upper position with the top plate 110b lowered when the elevating operation of the substrate elevating member 90 is not restricted, the lift pins 91b can be prevented from being damaged.

In this modification, the example in which the substrate processing apparatus according to the present invention is applied to a liquid processing unit that supplies a processing liquid to the wafer W and processes the wafer W with the supplied processing liquid has been described. However, the substrate processing apparatus according to the present invention is also applicable to a substrate processing unit that supplies a processing gas such as ozone gas instead of the processing liquid to the wafer W and processes the wafer W with the supplied processing gas.
(Third Modification of Embodiment)
Next, a liquid processing unit according to a third modification of the embodiment of the present invention will be described with reference to FIG. FIG. 12 is an enlarged cross-sectional view of the vicinity of the top plate 110c and the substrate elevating member 90 when the substrate elevating member 90 is raised while the top plate 110c is lowered in the liquid processing unit according to this modification.

  The liquid processing unit according to this modification is different from the liquid processing unit 22 according to the embodiment in that the convex portion is not formed on the lower surface 112 of the top plate 110c, and the contact prevention portion 130c does not include the convex portion. To do.

  Also in this modification, the liquid processing system 10 according to the embodiment described with reference to FIGS. 1 to 3 can be used. Also, the liquid processing unit according to this modification is the same as the liquid processing unit 22 according to the embodiment described with reference to FIG. 4 except that a convex portion is not formed on the lower surface 112 of the top plate 110c described later. It is.

  On the other hand, in this modification, as shown in FIG. 12, the contact prevention portion 130 c does not have a convex portion but has a concave portion 132. The substrate elevating member 90 does not include a dry gas supply nozzle provided on the upper surface 91a of the lift pin plate 91 so as to protrude from the upper surface 91a of the lift pin plate 91. Therefore, as shown in FIG. 12, the recess 132 is formed in the lower surface 112 of the top plate 110c and in the region facing the lift pin 91b. The recess 132 is provided so as to be recessed upward from the lower surface 112 of the top plate 110c. Then, when the substrate elevating member 90 contacts the top plate 110c, the recess 132 is in contact with the portion other than the recess 132 of the top plate 110c, that is, the lower surface 112 of the top plate 110c contacts the portion other than the lift pin 91b of the lift pin plate 91 To be provided.

  Also in the example shown in FIG. 12, the height of the lift pin 91b from the upper surface 91a of the lift pin plate 91 is HA. And the depth of the recessed part 132 from the lower surface 112 of the top plate 110c is set to H2. At this time, H2 may be determined so that the relationship of H2> HA is satisfied.

  When the above relationship is satisfied, when the substrate elevating member 90 is raised to the delivery position with the transfer mechanism 24 for the wafer W while the top plate 110c is lowered (the substrate elevating member 90 contacts the top plate 110c). 12), the lower surface 112 of the top plate 110c comes into contact with a portion other than the lift pins 91b of the lift pin plate 91 as shown in FIG. However, the upper end of the lift pin 91b does not contact the bottom surface 132a of the recess 132 of the top plate 110c. When the lower surface 112 of the top plate 110c contacts the lift pin plate 91, there is still a gap H2-HA (> 0) between the upper end of the lift pin 91b and the bottom surface 132a of the recess 132 of the top plate 110c. is there.

  Thus, according to this modification, the recessed part 132 is formed in the area | region which is the lower surface 112 of the top plate 110c, and opposes the lift pin 91b. Thereby, even if the board | substrate raising / lowering member 90 approaches the top plate 110c, parts other than the recessed part 132 of the top plate 110c contact the lift pin plate 91, and the contact with the lift pin 91b and the top plate 110c can be prevented. Therefore, even when the substrate elevating member 90 is raised to the upper position with the top plate 110c lowered when the elevating operation of the substrate elevating member 90 is not restricted, the lift pins 91b can be prevented from being damaged.

  In this modification, the example in which the substrate processing apparatus according to the present invention is applied to a liquid processing unit that supplies a processing liquid to the wafer W and processes the wafer W with the supplied processing liquid has been described. However, the substrate processing apparatus according to the present invention is also applicable to a substrate processing unit that supplies a processing gas such as ozone gas instead of the processing liquid to the wafer W and processes the wafer W with the supplied processing gas.

  The preferred embodiments of the present invention have been described above. However, the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Can be modified or changed.

10 Liquid Processing System 22 Liquid Processing Unit 90 Substrate Lifting Member 91b Lift Pin (Placement Section)
110 Top plate (top plate)
130 Contact prevention part

Claims (5)

In a substrate processing apparatus for processing a substrate disposed at a predetermined processing position,
A substrate elevating member provided so that the substrate can be raised and lowered between the processing position and a position above the processing position;
A mounting portion that is provided to project upward from the substrate lifting member, and on which the substrate to be lifted is mounted;
A top plate portion that is provided so as to be able to be raised and lowered above the substrate disposed at the processing position, and covers the substrate from above in a lowered state;
A substrate processing apparatus, comprising: a contact prevention unit that is provided on the top plate portion and prevents contact between the placement portion and the top plate portion when the substrate elevating member contacts the top plate portion. The contact prevention part is
Including a recess formed in a region facing the mounting portion on the lower surface of the top plate portion;
When the substrate elevating member comes into contact with the top plate portion, the portions other than the concave portions of the top plate portion come into contact with the substrate elevating member, thereby preventing contact between the mounting portion and the top plate portion. The substrate processing apparatus according to claim 1. The contact prevention part is
Including a convex portion formed in a region other than the region facing the mounting portion on the lower surface of the top plate portion,
The contact between the mounting portion and the top plate portion is prevented by the convex portion coming into contact with the substrate lifting member when the substrate lifting member is in contact with the top plate portion. Item 3. The substrate processing apparatus according to Item 2. The substrate elevating member includes a supply nozzle that is provided on the upper surface of the substrate elevating member and supplies a processing liquid or gas.
The contact prevention part is
A lower surface of the top plate portion, or a convex portion formed in a region other than the region facing the placement portion or facing the supply nozzle,
The contact between the mounting portion and the top plate portion is prevented by the convex portion coming into contact with the substrate lifting member when the substrate lifting member is in contact with the top plate portion. Item 3. The substrate processing apparatus according to Item 2. The substrate elevating member includes a supply nozzle that is provided on the upper surface of the substrate elevating member and supplies a processing liquid or gas.
The contact prevention portion includes a convex portion formed in a region other than the region facing the mounting portion on the lower surface of the top plate portion,
The convex part includes a hollow part formed on a lower surface of the convex part and facing the supply nozzle,
When the substrate lifting member comes into contact with the top plate portion, the contact preventing portion contacts the substrate lifting member with a portion other than the hollow portion of the convex portion. The substrate processing apparatus of Claim 1 or Claim 2 which prevents a contact with a part.

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