JP2011198733A - Ac type plasma display element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an AC type plasma display element capable of effectively restraining formation of hydrate and carbonate caused by reaction between a protective film and moisture and a carbon dioxide gas flowed from an atmosphere at a sealing and exhaust process.SOLUTION: The AC type plasma display element includes a front substrate composed of a front glass plate, a front dielectric layer and the protective film. The protective film is made from a binary oxide ((MMg)O) wherein bivalent metal oxide (MO) is added to an MgO base material. A nonvolatile oxide getter layer is uniformly applied to a surface of a back substrate composed of a back glass plate, a back dielectric layer and a partition, and a phosphor layer is formed on the surface the nonvolatile oxide getter layer.

Description

The present invention relates to an AC type plasma display device, and more particularly, includes a front substrate composed of a front glass / front dielectric layer / protective film, and the protective film is a bivalent material on an MgO substrate. It is composed of a binary oxide ((M _x Mg _1-x ) O) to which a metal oxide (MO) is added, and the non-volatile oxide getter layer is composed of a back glass / a back dielectric layer / a partition wall. The present invention relates to an AC type plasma display device characterized by having a structure in which a phosphor layer is formed on the surface of the non-volatile oxide getter layer, which is uniformly coated on the surface of the back substrate.

  The PDP is a flat panel display element, and has an excellent image quality, a thin thickness, and a light weight, and thus is mainly used for a large display device of 40 inches or more. In the plasma display device, pixels are formed at intersections of a large number of address electrodes between a large number of barrier ribs formed on the back plate and a large number of sustain electrodes formed on the front plate, thereby realizing an image.

  FIG. 1 shows a schematic structure of such a PDP. Referring to FIG. 1, the PDP has a transparent dielectric layer 90 coated on a back plate 80 made of a glass or metal substrate, and an address electrode 50 is formed on the back plate 80 or the back dielectric layer 90. Yes. In addition, long stripe-shaped barrier ribs 60 or quadrangular barrier ribs are present across the address electrodes 50, and a phosphor is applied to the surface of the space between the barrier ribs 60, and this phosphor constitutes a sub-pixel. It has a structure.

  A large number of sustain electrodes 40 and scan electrodes are formed on the front plate 10 made of glass, and the front dielectric layer 20 and the MgO protective film 30 are located below the sustain electrodes 40 and scan electrodes. Therefore, when the front plate 10 and the back plate 80 are combined, a large number of pixel spaces separated by the partition wall 60 are generated.

  Since Ne / Xe gas or Ne / He / Xe gas or the like is sealed in such an isolation space, if a voltage is applied to the sustain electrode 40 and the address electrode 50, the plasma is generated on the space by glow discharge. If a sustain voltage is applied between the sustain electrode 40 and the scan electrode, a glow discharge is generated between the sustain electrodes 40 of the discharge cells in which the wall voltage is formed in the addressing process. The vacuum ultraviolet rays generated from the plasma generated at this time excite the phosphors 70 coated on the side surfaces of the barrier ribs 60 and the lower bottom surfaces between the barrier ribs 60. As a result, red, green, and blue visible rays are emitted. To occur.

  The MgO protective film 30 plays a role of lowering the discharge voltage by emitting secondary electrons by ions formed in the plasma during the glow discharge of the PDP. After the discharge is completed, the exoelectron ( exo-electron) and provide seed electrons necessary to start discharge. Therefore, the MgO protective film 30 has been used as an electron emission material from the beginning of PDP development.

  Recently, efforts have been made to increase the Xe content of the discharge gas in order to reduce the power consumption of the PDP (Non-patent Document 1). According to these research results, it is reported that when the Xe content in the discharge gas is increased to 50%, the discharge efficiency is improved by 3 times or more compared to the existing devices. However, if the Xe content in the discharge gas is increased in this way, there is a problem that the discharge voltage increases rapidly. This is because Xe ions interfere with the emission of secondary electrons from the MgO material.

  It is known that secondary electrons are emitted from the MgO protective film in the AC PDP glow discharge process almost through the Auger neutralization process. Hereinafter, such a release process will be described with reference to FIG. That is, if ions generated by PDP discharge approach the surface of MgO, electrons in the 2p electron orbit of oxygen ions in MgO cause a neutralization reaction with the ions by tunneling, and the energy generated at this time is It is transmitted to electrons existing in the valence band and emitted to the outside. In order for secondary electrons to be emitted through such a process, the following conditions must be satisfied (Non-Patent Document 2).

E _i −2 (E _g + χ)> 0 (Formula 1)

In Equation 1, E _i represents ionization energy of gas, E _g represents band gap energy of a substance that emits secondary electrons, and χ represents electron affinity of the substance that emits secondary electrons. Means.

  That is, in order to easily emit electrons, the ionization energy of gas ions must be large, or the band gap energy and electron affinity of a material that emits secondary electrons must be relatively small.

  However, as shown in FIG. 3, the Xe ion has a low neutralization reaction energy, so it cannot satisfy the condition of the above formula 1, and as a result, secondary electrons are emitted by the Auger neutralization reaction mechanism. Make it impossible. Therefore, in order for Xe ions to emit secondary electrons, the band gap energy and electron affinity of the protective film must be reduced, and the condition of Equation 1 must be satisfied.

A method for reducing the band gap energy of a material and increasing the secondary electron emission coefficient is disclosed in US Patent Application Publication No. 2007-0262715. According to this application, in the composition of (M _x Mg _1-x ) O, the composition range of x is 0.01 <x <1.0, and M is Be, Ca, Sr, Ba, Ra, Sc, It is disclosed that the substance is selected from Y, Ti, Zr, Hf, V, Nb, Ta, Zn, Na, Al or a mixture thereof. The composition preferably has a band gap energy of 3.5 eV to 7 eV, and among these compositions, M is preferably a substance composed of Be, Ca, Sr, Ba, Ra elements or a mixture thereof. It is proposed. By using such a binary oxide of (M _x Mg _1-x ) O, the emission coefficient of secondary electrons is increased and the discharge voltage is lowered. As a result, the electron heating efficiency is improved. The power consumption of the PDP can be reduced.

However, the band gap energy-regulated binary system (M) is provided as a protective film material so that Xe ions generated by PDP glow discharge emit secondary electrons to the outside of the material through Auger neutralization reaction. _The xMg1 _-x ) O oxide-based protective film has several problems that need to be solved.

Specifically, a binary system such as (Mg, Ca) O, (Mg, Sr) O, (Ca, Sr) O, which is currently used as a protective film of AC PDP or has been proposed for use ( The material of M _x Mg _1-x ) O oxide has a problem that it easily reacts with moisture and carbon dioxide gas in the atmosphere to easily form hydrates and carbonates. In particular, materials such as CaO and SrO, which are known as materials capable of effectively emitting secondary electrons by Xe ions, rapidly generate hydrates and carbonates by reaction with moisture and carbon dioxide gas, and secondary materials are emitted. There is a problem of reducing the electron emission performance. The Ca-hydroxides, Ca-carbonates, Sr-hydroxides, Sr-carbonates, etc. produced at this time have a very high decomposition temperature compared to Mg-hydroxyide and Mg-carbonate, so that during the PDP exhaust and sealing process Hard to remove. As a result, in order to apply these materials to PDP, there is a problem that a method for controlling the formation of these hydrates and carbonates must be additionally applied.

  Therefore, as a method of suppressing the formation of hydrate and carbonate as described above, the surface of the protective film material is moved and stored in a state of being coated with a temporary protective thin film capable of suppressing the reaction with atmospheric moisture and carbon dioxide. A method for removing the temporary protective thin film in the element aging process after the sealing and exhausting processes has been proposed. Such a method is disclosed in Patent Document 1 and a research paper (Non-Patent Document 3). According to these results, the temporary protective thin film effectively performs the role of suppressing the formation of hydrates and carbonates, but the use of such a temporary protective thin film increases the number of process steps. There is a problem that the process time for removal increases and the temporary protective thin film removed by sputtering contaminates the phosphor.

  As another method for suppressing the formation of hydrate and carbonate, the partial pressure of moisture and carbon dioxide gas in the process atmosphere is maintained and controlled below the equilibrium partial pressure. Methods have been proposed to remove reactants in the evacuation and sealing process so that hydrates and carbonates are not formed. Such a method is disclosed in Patent Document 2 and published paper (Non-Patent Document 4). However, according to such a method, there is an advantage that excellent properties can be obtained without contaminating the protective film material, but after manufacturing the protective film coating layer, all steps must be maintained in vacuum. However, there is a problem that the manufacturing process cost increases rapidly and the product yield decreases.

  Accordingly, there is an increasing need for a technique that can solve the above problems.

US Pat. No. 5,938,494 US Patent Application Publication No. 2007/0262715 US Patent Application Publication No. 2002/0008469 US Patent Application Publication No. 2008/0020668

G. Overluizen, T.W. Dekker, M.M. F. Gillies, S.M. T.A. de Zwart, “High-Xe-content high-efficacy PDPs”, J. Am. of the SID, 12 (1), pp51-55 (2004) H. Hagstrum, “Theory of Auger Neutralization of the Surface at a Diamond—Type Semiconductor”, Phys. Review, 122 (1), pp83-113 (1961) Ki-Wong Whang, et al. , “High Luminous Efficiency and Low Driving Voltage PDP with SrO-MgO Double Protective Layer”, IMID Technical Digest, pp 173-176 (2009) T.A. Yano, et al. , “Discharge characteristics of MgO—PDP manufactured by using“ all-in-vacuum ”process”, IMID Technical Digest, pp 28-30 (2009) M.M. Riva, et al. , A comparable study of differential getter configurations on final PDP performances, IMID Technical Digest, pp 1895-1898 (2008)

  An object of the present invention is to solve the above-described problems of the prior art and technical problems that have been requested from the past.

  Specifically, the object of the present invention is to provide an alternating current capable of effectively suppressing the formation of hydrates and carbonates due to the reaction between the protective film and the moisture and carbon dioxide gas that flowed in from the atmosphere in the sealing and exhausting processes. A plasma display device is provided.

  Another object of the present invention is to provide an AC type plasma display device capable of reducing the power consumption of a PDP by lowering the discharge voltage and improving the electron heating efficiency.

In order to achieve the above object, an AC plasma display device (AC PDP) according to the present invention includes a front substrate composed of a front glass / front dielectric layer / protective film, and the protective film includes MgO. The substrate is made of a binary oxide ((M _x Mg _1-x ) O) in which a divalent metal oxide (MO) is added to the base material, and the non-volatile oxide getter layer is composed of a back glass / back dielectric layer. / It is characterized by having a structure in which a phosphor layer is formed on the surface of the non-volatile oxide getter layer, which is uniformly coated on the surface of the back substrate composed of barrier ribs.

  Accordingly, the getter that absorbs water vapor and carbon dioxide gas is uniformly applied to the surface of the back substrate, which is a discharge cell, so that a hydrate and a carbonate can be formed with a binary oxide protective film during the sealing and exhaust processes. Can be prevented from being formed.

  In one specific example, a plasma display device according to the present invention is driven by applying a pulsed voltage to a number of electrodes formed on a display region of a front glass, and a xenon (Xe) gas is discharged into a discharge space. A protective film covering a front dielectric layer for coating a number of scan electrodes formed on the front glass, and a back surface facing the front glass Glass, a large number of address electrodes formed on the back glass, a back dielectric layer covering the address electrodes, a barrier rib formed on the back dielectric layer, and a phosphor layer formed on the back dielectric layer and the surface of the barrier rib It is comprised with the back substrate containing.

In the present invention, the protective film made of binary (M _x Mg _1-x ) O oxide is formed by any one method selected from, for example, electron beam vapor deposition, ion plating, sputtering, and chemical vapor deposition. .

Specifically, after heating an oxide powder or a hydrate, nitride or carbonate powder thereof, which is a raw material powder of binary (M _x Mg _1-x ) O oxide, calcination, diffusion reaction, Sintering steps are sequentially performed to produce pellets which are vapor deposition sources of binary (M _x Mg _1-x ) O oxide, and the thin film is produced through a process of evaporating the pellets.

As described above, the material of the protective film is a binary (M _x Mg _1-x ) O oxidation in which MgO is used as a base component and a divalent metal oxide containing an alkaline earth metal oxide is added as an alloy component. Here, M includes at least one selected from the group consisting of Ca, Sr, Ba, Zn, Co, Ni and Fe, and the added metal oxide has a molar fraction x of 0. The range is from 001 to 0.5.

  In one specific example, the divalent metal oxide (MO) is at least one selected from the group consisting of BeO, CaO, SrO, BaO, CoO, NiO, ZnO, and FeO.

These binary (M _x Mg _1-x ) O oxides are highly reactive with water vapor and carbon dioxide, as described above, and thus form hydrates or carbonates when exposed to the atmosphere. It is common.

  In this connection, FIG. 4 is a graph showing calculation of the equilibrium partial pressure of water vapor and carbon dioxide gas in which CaO forms Ca-hydroxide and Ca-carbonate.

Referring to FIG. 4, a binary (Ca _x Mg _1-x ) O oxide protective film is formed of water vapor and carbon dioxide in which CaO hydrate and carbonate are formed. When exposed to an atmosphere having a partial pressure of water vapor or carbon dioxide gas higher than the equilibrium partial pressure of gas, a hydrate or carbonate is formed on the surface of the protective film. As shown in FIG. 4, these equilibrium partial pressures have a characteristic that changes sensitively with temperature, and as the temperature increases, these equilibrium partial pressures increase sensitively. Therefore, it is necessary to reduce the partial pressure of water vapor and carbon dioxide gas in the atmosphere where the protective film is exposed.

  According to the present invention, the above problem is solved by the non-volatile oxide getter layer uniformly formed on the surface of the back substrate composed of the back glass / back surface dielectric layer / partition wall.

The material for forming such a non-volatile oxide getter layer has a value lower than the equilibrium partial pressure of water vapor and carbon dioxide of a binary (M _x Mg _1-x ) O oxide protective film. Second, it must have the property of decomposing hydrates and carbonates at the temperature of the PDP phosphor firing process and thirdly making the hydrates and carbonates unstable under vacuum heating / evacuation process conditions. is there.

  Examples of the getter material satisfying each of the above characteristics include BeO, MgO, CaO, SrO, and alloy compounds thereof. According to the present invention, each of the above components can be used alone or in combination. Used in combination.

  The average particle size of each particle forming the getter layer is desirably 1 μm or less. When the average particle size of each particle forming the getter layer is larger than that, the surface area of the getter is decreased, and the performance of the getter is deteriorated. There is a problem. Further, the thickness of the getter layer is desirably 5 μm or less, and when the thickness of the getter layer is larger than that, there is a problem that the thickness of the phosphor layer must be reduced. In one desirable example, the average particle size is 50 nm to 1 μm and the thickness of the getter layer is in the range of 100 nm to 5 μm.

  The getter layer is formed by, for example, a spray coating method, a print coating method, an electrodeposition coating method, or the like. These getter materials react easily with moisture and carbon dioxide gas in the air, so the coating process can be carried out using a non-polar solvent suspension or through a dry process that does not use a solvent. It is desirable to do.

  On the other hand, a part of the technique using a getter for removing water vapor and carbon dioxide is known.

  Specifically, Patent Document 3 and a published paper (Non-Patent Document 5) disclose a method for removing water vapor and carbon dioxide gas by positioning a Zr—V—Al—Fe metal powder in a non-discharge region of a PDP element. ing. However, since such a method has a low gas permeability with respect to the partition wall from which water vapor and carbon dioxide are discharged and the phosphor powder, the PDP closed discharge cell structure separated into the partition wall having a large resistance to gas exhaust is used. There is a problem that such an effect is limited.

  Unlike this, Patent Document 4 discloses that a metal powder getter or a CaO, SrO, BaO water vapor adsorbing material is formed in a non-discharge region on the surface of the MgO thin film, and the water vapor and carbon dioxide gas released from the barrier ribs and phosphor surfaces are used. A method of effectively acting as a getter is provided. However, the method of forming the getter material layer on the surface of the MgO thin film has a problem that the gap between the front substrate and the rear substrate is changed, and as a result, a crosstalk defect occurs between adjacent discharge cells. There is a problem that the upper part of the MgO thin film and the partition walls are damaged by the collision of the upper and lower plates during the alignment operation.

  On the other hand, the present invention provides a configuration in which the non-volatile oxide getter layer is uniformly applied to the surface of the back substrate composed of the back glass / back surface dielectric layer / partition wall. The inventors of the present application have confirmed that the above-described conventional problems can be solved by the getter layer having the above-described configuration.

  Such a non-volatile oxide getter layer is formed by uniformly applying a non-volatile oxide to the surface of a back substrate composed of a back glass / back dielectric layer / partition to form a getter layer, and by paste dispensing. After the phosphor film is formed on the getter layer, the coated sealing paste is fired, and the sealing / heating exhaust / discharge gas sealing process is performed.

  At this time, the temperature in the sealing step is desirably 450 ° C. to 520 ° C., and the temperature in the heating and exhausting step is desirably 200 ° C. to 400 ° C.

  In one desirable example, in order to suppress the formation of hydrates and carbonates due to the reaction between the protective film made of the binary oxide and the water vapor and carbon dioxide in the atmosphere in the sealing step, the step is performed with nitrogen. It can be performed in an atmosphere or a vacuum atmosphere.

  The AC type plasma display device according to the present invention realizes the unique characteristics that these materials emit secondary electrons by Auger neutralization reaction with Xe ions by suppressing the formation of hydrates and carbonates of the protective film. Therefore, the discharge voltage is remarkably reduced, the discharge characteristic is constant with time, and the light emission efficiency is improved, so that the discharge characteristic is excellent.

  In addition, the protective film of the AC type plasma display device according to the present invention can increase the Xe content in the discharge gas to 10% to 100%, so that the power consumption is low and the operating voltage is low. And it is applied to manufacture PDP for high resolution monitor such as Full HD.

It is the cross-sectional perspective view which showed the structure of the conventional plasma display element roughly. It is the process figure which showed roughly the electron emission process through the Auger neutralization process. It is the schematic diagram which showed the energy level of the ionization energy state of the gas used as discharge gas, and the metastable state of MgO band structure. It is the graph which calculated and showed the equilibrium partial pressure of the water vapor | steam and the carbon dioxide gas in which CaO forms Ca-hydroxide and Ca-carbonate. 1 is a schematic vertical sectional view showing a structure of a back plate of an AC type plasma display device according to one embodiment of the present invention. Binary (Ca _{0.15 Mg 0.85) O} oxide pellets binary oxide thin film microstructure produced by evaporation by electron-beam evaporation method which is a photograph observed by an electron microscope. PDP in which a front substrate having a binary (Ca _0.15 Mg _0.85 ) O oxide protective film and a rear substrate having a normal structure are sealed in a nitrogen atmosphere, and a front surface having an MgO oxide protective film It is the graph which measured and compared the discharge voltage of PDP which has not sealed the board | substrate and the back substrate which has a normal structure in nitrogen atmosphere according to the aging time of PDP. A PDP in which a front substrate provided with a binary (Ca _0.15 Mg _0.85 ) O oxide protective film and a rear substrate including a getter under the phosphor layer are sealed in a nitrogen atmosphere; It is the graph which measured and compared the discharge voltage of each PDP according to the aging time of PDP.

  Hereinafter, the present invention will be described in more detail with reference to the drawings according to embodiments of the present invention, but the scope of the present invention is not limited thereto.

  FIG. 5 is a schematic vertical sectional view showing the structure of the back substrate of the AC type plasma display device according to one embodiment of the present invention.

  Referring to FIG. 5, the back substrate of the AC PDP is composed of a back glass 80 / a back dielectric layer 90 / a partition wall 60, and a non-volatile oxide getter layer 100 is uniformly applied to the surface of the back substrate. The phosphor layer 70 is formed on the surface of the nonvolatile oxide getter layer 100.

  Therefore, in the AC PDP according to the present invention, the non-volatile oxide getter layer 100 is positioned on the lower surface of the phosphor layer 70, so that moisture and carbon dioxide generated from the barrier ribs 60, the back dielectric layer 90, and the phosphor layer 70 can be obtained. Gas can be effectively collected by the non-volatile oxide getter layer 100.

  In addition, the AC PDP according to the present invention reduces the partial pressure of moisture and carbon dioxide gas in the process atmosphere at the sealing stage, which is a manufacturing process stage of the PDP in which the protective film is exposed to the air atmosphere. The degree of reaction is controlled. That is, as shown in FIG. 5, a non-volatile oxide getter layer 100 having excellent reaction characteristics with moisture and carbon dioxide gas is positioned below the phosphor layer 70, and this serves as a getter.

  That is, most of the moisture and carbon dioxide gas released into the discharge cell during the use of the PDP sealing and exhausting process and the PDP by the consumer are generated from the phosphor layer 70, the back dielectric layer 90, and the barrier ribs 60. Therefore, the getter layer 100 is located on the lower surface of the phosphor layer 70 where these impurity gases can be effectively gettered.

  Furthermore, by performing the sealing step in a nitrogen atmosphere, the partial pressure of moisture and carbon dioxide gas in the atmosphere can be reduced, and the degree of reaction of the protective film can be suppressed.

FIG. 6 is a photograph of a microstructure of a binary oxide thin film produced by evaporating a pellet of binary (Ca _0.15 Mg _0.85 ) O oxide by an electron beam evaporation method and observed with an electron microscope. is there.

Specifically, FIG. 6 shows a binary system (Ca _0.15 Mg _0.85 ) O produced through mixing calcination, diffusion reaction and sintering processes after mixing Mg (OH) ₂ and CaCO ₃ raw material powders. It is the photograph which observed the microstructure of the binary system oxide thin film manufactured by evaporating the oxide pellet by the electron beam evaporation method with the electron microscope.

Referring to FIG. 6, a binary (Ca _0.15 Mg _0.85 ) O oxide protective film is formed with good crystallinity, and in order to form such a crystalline protective film. In addition, the substrate was deposited under conditions of heating to 370 ° C.

  Hereinafter, the present invention will be described in more detail through experimental contents. However, the following experimental contents are intended to illustrate the present invention, and the scope of the present invention is not limited thereto.

<Comparative Example 1>

A front substrate having a crystal phase binary system (Ca _0.15 Mg _0.85 ) O oxide protective film and a rear substrate composed of a conventional rear glass / back dielectric layer / partition wall / phosphor layer are combined with nitrogen at 500 ° C. After sealing in an atmosphere and heating and evacuating at a temperature of 380 ° C., a discharge gas was sealed to produce a PDP. At this time, a Ne-20% Xe mixed gas was used as the discharge gas, and the sustaining cycle was 30 kHz.

  <Comparative example 2>

  A PDP was manufactured in the same manner as in Comparative Example 1 except that the protective film of the front substrate was made of MgO oxide and the front substrate and the back substrate were not sealed in a nitrogen atmosphere.

<Example 1>

A CaO getter powder having an average particle size of 1 μm or less is coated with a getter layer with a thickness of 2 μm or less, and a phosphor substrate is coated on the surface by a printing method to form a back substrate, and a crystal phase binary system (Ca _0.15 Mg _0.85 ) O The front substrate provided with the oxide protective film and the back substrate are heated to a temperature of 500 ° C. and fired, and sealed in a nitrogen atmosphere, and then heated and discharged. A PDP was manufactured by gas filling. Other conditions are the same as in Comparative Example 1.

<Experimental example 1>

  The discharge voltage of each PDP manufactured in the comparative examples 1 and 2 and the example was measured according to the aging time of the PDP, and the results are shown in FIGS.

First, referring to FIG. 7, in Comparative Example 1, the discharge voltage of the binary (Ca _0.15 Mg _0.85 ) O oxide protective film is about 305 V, and the MgO protective film of Comparative Example 2 is used. It can be seen that it appears about 40 V lower than the discharge voltage of 345 V. Such a decrease in the discharge voltage is due to the fact that the band gap energy of the binary system (Ca _0.15 Mg _0.85 ) O oxide protective film is decreased as compared with MgO and the secondary electron emission coefficient is increased. Then it is seen.

Next, referring to FIG. 8, it can be seen that the PDP discharge voltage of Example 1 was reduced to 230V. On the other hand, in the case of Comparative Example 2 using a protective film made of MgO, the binary (Ca _0.15 Mg _0.85 ) O oxide sealed in a nitrogen atmosphere with the discharge voltage reduced to 345 V In the case of the comparative example 1 which uses a protective film, it turns out that a discharge voltage reduces to 305V.

Therefore, compared to the PDP of Comparative Example 1 in which the binary (Ca _0.15 Mg _0.85 ) O oxide protective film was sealed only in a nitrogen atmosphere, the protective film was sealed in a nitrogen atmosphere, and CaO It can be seen that the PDP of Example 1 in which the getter layer is applied to the surface of the back substrate exhibits a great effect in terms of the discharge voltage reduction effect side. That is, as described above, according to the AC type plasma display device according to the present invention including the protective film having a specific configuration and the getter layer positioned at a predetermined position, the efficiency is remarkably increased and the power consumption of the PDP is reduced. The cost of manufactured parts can be reduced.

  Those skilled in the art to which the present invention pertains will be able to make various applications and modifications within the scope of the present invention based on the above description.

60 partition wall 70 phosphor layer 80 back glass 90 back dielectric layer 100 non-volatile oxide getter layer

Claims (9)

A front substrate composed of a front glass / front dielectric layer / protective film is included, and the protective film includes a binary oxide (M) in which a divalent metal oxide (MO) is added to a MgO base material. _x Mg _1-x ) O), and the non-volatile oxide getter layer is uniformly applied to the surface of the back substrate composed of back glass / back surface dielectric layer / partition, and the non-volatile oxide An AC plasma display element having a structure in which a phosphor layer is formed on a surface of a getter layer.   The AC plasma display device according to claim 1, wherein the protective film is formed by any one method selected from electron beam vapor deposition, ion plating, sputtering, and chemical vapor deposition.   In the metal oxide (MO), M is one or more selected from the group consisting of Ca, Sr, Ba, Zn, Co, Ni, and Fe, and the mole fraction of the added metal oxide ( 2. The AC type plasma display device according to claim 1, wherein x) is in the range of 0.001 to 0.5.   The AC type of claim 3, wherein the metal oxide (MO) is at least one selected from the group consisting of BeO, CaO, SrO, BaO, CoO, NiO, ZnO, and FeO. Plasma display element.   The non-volatile oxide getter layer includes one or more selected from the group consisting of BeO, MgO, CaO, SrO, or an alloy compound thereof, and an average particle diameter of each particle forming the getter layer is 1 μm. 2. The AC type plasma display device according to claim 1, wherein the thickness of the getter layer is 5 [mu] m or less.   The AC plasma display device of claim 1, wherein the non-volatile oxide getter layer is formed by a method selected from a spray coating method, a print coating method, and an electrodeposition coating method.   The non-volatile oxide getter layer is formed by uniformly applying a non-volatile oxide to the surface of the back substrate composed of the back glass / back surface dielectric layer / partition, and forming the getter layer by paste dispensing. 2. The method according to claim 1, wherein the phosphor film is formed on the layer, and then the applied sealing paste is fired and the sealing / heating exhaust / discharge gas is sealed. 2. AC type plasma display device according to   The AC type plasma display device according to claim 7, wherein a temperature of the sealing step is 450 ° C to 520 ° C, and a temperature of the heating and exhausting step is 200 ° C to 400 ° C.   In order to suppress the formation of hydrate and carbonate due to the reaction between the protective film and water vapor and carbon dioxide in the atmosphere in the sealing step, the step is performed in a nitrogen atmosphere or a vacuum atmosphere. Item 2. The AC plasma display element according to Item 1.

Images