JP2011194721A - Mold manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mold manufacturing apparatus for efficiently producing a mold having a nano-fine structure.SOLUTION: The apparatus incldes: a self-organization film forming part 2 for forming on an inorganic thin film 5 a self organization film 40 containing a silane coupling agent having at least one functional group of an amino group, mercapto group, thiol group, disulfide group, cyano group, halogen group, and sulfonic acid group; a washing part 3 for washing the surface of the self-organization film 40; and an energization layer forming part 4 for forming an energization layer 41 on the self-organization film 40. The self-organization film forming part 2, the washing part 3, and the energization layer forming part 4 are held in an inert gas atmosphere.

Description

The present invention relates to a mold manufacturing apparatus, and is particularly suitable for application to manufacturing a mold having a fine structure.

  A conventional mold manufacturing method is shown in FIG. A resist is applied to a glass substrate or Si substrate 100, and a pattern 101 is formed on the resist using ultraviolet rays, electron beams, X-rays, or the like. A conductive layer 102 is formed thereon by sputtering (for example, Patent Document 1). Next, Ni plating is performed on the conductive layer 102 to form a metal film 103, and the metal film 103 is released to obtain a mold 104.

JP 2007-172712 A

  To cope with higher density and higher functionality, it is necessary to form a fine pattern in order to obtain a finer nano-sized fine structure and a three-dimensional shape. Problems such as inability to embed plating occurred.

  In the three-dimensional structure, when the energization layer is formed by sputtering, it is difficult to form the energization layer due to insufficient coverage.

  Then, an object of this invention is to provide the metal mold | die manufacturing apparatus which can manufacture the metal mold | die which has a nanosize fine structure efficiently.

  The invention according to claim 1 of the present invention provides a mold manufacturing apparatus in which a metal film is formed on an inorganic thin film having a fine structure, and the metal film is separated from the inorganic thin film to form a mold. Self-assembly for forming a self-assembled film containing a silane coupling agent having a functional group including one or more of amino group, mercapto group, thiol group, disulfide group, cyano group, halogen group, and sulfonic acid group on a thin film A self-assembled film forming unit, a cleaning unit, and a cleaning unit that cleans the surface of the self-assembled film, and a conductive layer forming unit that forms a conductive layer on the self-assembled film. And the conductive layer forming part is maintained in an inert gas atmosphere.

  The invention according to claim 2 of the present invention is such that the energization layer forming part forms a metal ion layer containing one or more of Au, Pd, Ag, Pt, Bi, and Pb on the self-assembled film. It has an ion layer formation part and the thin film plating layer formation part which forms a thin film plating layer on the said metal ion layer, It is characterized by the above-mentioned.

  In the invention according to claim 3 of the present invention, the self-assembled film forming portion has a functional group containing one or more of an amino group, a mercapto group, a thiol group, a disulfide group, a cyano group, a halogen group, and a sulfonic acid group. The inorganic thin film is immersed in the first solution containing the silane coupling agent having the surface having the fine structure facing downward, or the vapor of the first solution containing the silane coupling agent is evacuated to the inorganic thin film. Then, a self-assembled film having a functional group as the outermost surface is formed on the inorganic thin film, and the metal ion layer forming portion is made of one or more metals selected from Au, Pd, Ag, Pt, Bi, and Pb. The self-assembled film is immersed in a second solution containing ions with the surface having the fine structure facing sideways.

  The invention according to claim 4 of the present invention is characterized in that the metal ion layer forming section allows the self-assembled film to enter and exit the second solution at a speed of 10 mm / min to 100 mm / min.

  The invention according to claim 5 of the present invention is characterized in that the concentration of the metal ions in the second solution is 0.5 mM to 0.1 M.

  The invention according to claim 6 of the present invention is characterized by comprising a second cleaning section for cleaning the surface of the inorganic thin film before forming the self-assembled film.

  According to the present invention, the mold manufacturing apparatus is configured to perform the formation of the self-assembled film, the cleaning, and the formation of the conductive layer in an inert gas atmosphere. Since it can prevent adhering to the surface, a metal mold | die which has a nano-sized fine structure can be manufactured efficiently.

It is a figure which shows typically the whole structure of the metal mold | die manufacturing apparatus which concerns on this invention. It is sectional drawing of the workpiece | work used for the metal mold | die manufacturing apparatus which concerns on this invention. It is a figure which shows the structure of the self-organization film | membrane formation part of the metal mold | die manufacturing apparatus which concerns on this invention. It is a figure which shows the structure of the thin film plating layer formation part of the metal mold | die manufacturing apparatus which concerns on this invention. It is sectional drawing which shows the metal mold | die manufacturing method concerning this invention in steps, and is a figure which shows the state which formed the self-organization film | membrane on the pattern. It is sectional drawing which shows the metal mold | die manufacturing method which concerns on this invention in steps, and is a figure which shows the state which formed the electricity supply layer on the self-organization film | membrane. It is sectional drawing which shows the metal mold | die manufacturing method concerning this invention in steps, and is a figure which shows the state which formed the metal film on the electricity supply layer. It is sectional drawing which shows the metal mold | die manufacturing method concerning this invention in steps, and is a figure which shows the metal mold | die formed by the mold release process. It is sectional drawing which shows the conventional metal mold | die manufacturing method in steps, (A) The state which formed the pattern on the board | substrate, (B) The state which formed the electrically conductive layer on the pattern, (C) The Ni plating layer was formed It is a figure which shows the state which isolate | separated the Ni plating layer by the state and (D) mold release process.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(overall structure)
A mold manufacturing apparatus 1 shown in FIG. 1 includes a self-assembled film forming unit 2, a cleaning unit 3, and a conductive layer forming unit 4, and a self-assembled monolayer (SAM) is formed on an inorganic thin film having a fine structure. A self-assembled monolayer (hereinafter referred to as “self-assembled film”) is formed, and the surface of the self-assembled film is washed, and then an energization layer can be formed on the surface. As shown in FIG. 2, the inorganic thin film 5 having a fine structure is formed on a substrate 6. In the following description, the substrate 6 on which the inorganic thin film 5 having a fine structure is formed is referred to as a workpiece 7. I will call it.

  Incidentally, although not shown in the drawing, the mold manufacturing apparatus 1 further includes a metal film forming unit and a mold release processing unit, and forms a metal film on the energization layer, and the metal film is formed on the inorganic thin film 5. The mold can be formed by releasing from the mold.

  The mold manufacturing apparatus 1 holds the self-assembled film forming unit 2, the cleaning unit 3, and the conductive layer forming unit 4 in an inert gas atmosphere (FIG. 1). By comprising in this way, the metal mold manufacturing apparatus 1 can prevent that oxygen, carbon, a metal, etc. in air | atmosphere adhere to the surface, and can prevent that the self-organization film | membrane of the location is missing. .

  In the case of this embodiment, the mold manufacturing apparatus 1 includes a transport unit 10, a workpiece attachment unit 11, a second cleaning unit 12, a self-assembled film forming unit 2, a cleaning unit 3, an energization layer forming unit 4, and a workpiece unloading unit. 14 are arranged in the processing chamber 15 horizontally in the X direction. The workpiece attachment portion 11 is configured to hold the workpiece 7 with the surface S of the inorganic thin film 5 having a fine structure facing downward. In the following description, the direction from the workpiece attachment portion 11 of the mold manufacturing apparatus 1 to the workpiece removal portion 14 is defined as the X direction, and the vertically downward direction is defined as the Y direction.

  The interior of the processing chamber 15 is maintained in an inert gas atmosphere. The conveyance unit 10 includes a first conveyance unit 18 that conveys the workpiece 7 from the workpiece attachment unit 11 to the cleaning unit 3, and a second conveyance unit 19 that conveys the workpiece 7 from the cleaning unit 3 to the workpiece extraction unit 14.

  The first transport unit 18 and the second transport unit 19 can move the work 7 along transport paths 18R and 19R extending in the X direction, and the second cleaning unit 12, the self-assembled film forming unit 2, the cleaning unit 3, and the energization In the layer formation part 4, it is comprised so that the workpiece | work 7 can be moved to a Y direction.

  The 2nd washing | cleaning part 12 is comprised so that the surface S of the inorganic thin film 5 which has a fine structure can be wash | cleaned. In the case of the present embodiment, the second cleaning unit 12 includes an ultraviolet irradiation unit 21 that irradiates the surface S of the inorganic thin film 5 with ultraviolet rays.

  The self-assembled film forming unit 2 includes a silane coupling agent having a functional group including one or more of an amino group, a mercapto group, a thiol group, a disulfide group, a cyano group, a halogen group, and a sulfonic acid group. It is comprised so that a film | membrane can be formed.

  In the case of this embodiment, the self-assembled film forming unit 2 has a tank 22 that contains a first solution 22L containing the silane coupling agent, and the first solution 22L circulates in the tank 22. It is configured to be able to.

  As the first solution 22L, for example, a toluene solution containing 1 wt% of 3-aminopropyltrimethoxysilane (APTMS) as a silane coupling agent is heated to 60 ° C. As the silane coupling agent, mercaptopropyltrimethoxysilane (MPTMS), 3- [2- (2-aminoethylaminopropyltrimethoxysilane (TAS)), or the like can be used.

  As shown in FIG. 3, the first transport unit 18 is configured to immerse the workpiece 7 in the first solution 22L with the surface S of the inorganic thin film 5 having a fine structure facing downward. In this case, the first transport unit 18 moves in the X direction, transports from the second cleaning unit 12 to the self-assembled film forming unit 2 while holding the work 7, and moves in the Y direction to move the work 7. Is immersed in the first solution 22L.

  The cleaning unit 3 includes a cleaning tank 25 that stores the organic solvent 25L. As the organic solvent 25L, for example, methanol can be used. The 2nd conveyance part 19 is comprised so that the workpiece | work 7 can be immersed in the organic solvent 25L in the state which turned the surface S of the inorganic thin film 5 which has a fine structure sideways. In the case of this embodiment, the second transport unit 19 includes a receiving mechanism 19A that receives the work 7 from the first transport unit 18, and a 90-degree rotation mechanism 19B that makes the surface of the work 7 on which the self-assembled film is formed sideways. The workpiece 7 can be transported in a state where the surface S of the inorganic thin film 5 having a fine structure is held sideways.

  The energization layer forming unit 4 includes a metal ion layer forming unit 30 and a thin film plating layer forming unit 31, and is configured to be able to form an electrode when a metal film is formed by electrolytic plating.

  The metal ion layer forming unit 30 is configured to form a metal ion layer containing one or more metal ions of Au, Pd, Ag, Pt, Bi, and Pb on the self-assembled film. In the case of the present embodiment, the metal ion layer forming unit 30 has a metal ion fixing tank 32 containing a second solution 32L containing one or more metal ions of Au, Pd, Ag, Pt, Bi, and Pb. The second solution 32L can be circulated in the metal ion fixing tank 32. As the solvent, dilute hydrochloric acid, dilute nitric acid, or dilute sulfuric acid can be used.

  The second solution 32L preferably has a metal ion concentration of 0.5 mM to 0.1 M. Incidentally, when metal ions are adsorbed on a surface having a large area, it is necessary that the metal ion concentration of the second solution 32L be high. However, as the metal ion concentration is increased, the metal ions are brought into the solution. There is a problem that it is difficult to uniformly disperse, and as a result, metal ions are aggregated. In addition, when the second solution 32L having a high metal ion concentration is used, it also causes the metal ions to aggregate near the surface of the self-assembled film.

  Specifically, when the metal ion concentration is less than 0.5 mM, the metal ions are insufficient and are not fixed. On the other hand, when the metal ion concentration exceeds 0.1M, the metal ions may solidify. Therefore, in the case of this embodiment, it decided to immerse in the 2nd solution whose metal ion concentration is 0.5 mM-0.1M. Thereby, a desired metal ion layer can be formed on the self-assembled film.

Moreover, the 2nd conveyance part 19 is comprised so that the workpiece | work 7 can be immersed in the 2nd solution 32L in the state which turned the surface S of the inorganic thin film 5 which has a fine structure sideways. Incidentally, when considering the coverage of a nano-sized microstructure, it is necessary that metal ions, for example, Pd ²⁺ particles, be uniformly adsorbed without being aggregated as much as possible.

  Specifically, in the case of the workpiece 7 having a size of 10 mm or more and 100 mm or less, it was confirmed by an experiment that the metal ions are adsorbed on the surface of the self-assembled film in one minute. Therefore, in the case of this embodiment, the 2nd conveyance part 19 decided to make the workpiece | work 7 move in / out of the 1st solution 22L at the speed | rate of 10 mm / min or more and 100 mm / min or less. Thereby, the metal mold manufacturing apparatus 1 can more reliably form the metal ion layer on the surface of the self-assembled film.

The thin film plating layer forming unit 31 is configured to be able to form a thin film plating layer by electroless plating with the metal ion layer as a nucleus. The thin film plating layer forming unit 31 includes an electroless plating tank 33 that accommodates a weakly acidic plating bath 33 </ b> L, and the plating bath 33 </ b> L can be circulated in the electroless plating tank 33. Various metals can be applied to the thin film plating layer. For example, the thin film plating layer can be formed of Ni, Co, Pt, Sn, Au, Cu, or the like. In this case, as shown in FIG. 4, the 2nd conveyance part 19 is comprised so that the workpiece | work 7 can be immersed in a plating bath in the state which turned the surface S of the inorganic thin film 5 which has a fine structure sideways.
(Function and effect)
Next, the operation and effect of the mold manufacturing apparatus 1 configured as described above will be described.

  First, the work 7 (FIG. 2) is attached to the work attachment portion 11. In the work 7, a nano-sized pattern as a fine structure is formed on the inorganic thin film 5. In the case of this embodiment, the pattern has illustrated the thing of the two-dimensional structure which consists of unevenness | corrugations. The method for forming the pattern is not particularly limited, and a known technique can be used. In the present embodiment, the inorganic thin film 5 is made of a Si oxide film formed on the surface of the Si substrate 6. A resist is applied to the inorganic thin film 5, a mask is used to expose a predetermined pattern with ultraviolet rays, electron beams, X-rays, and the like, and the pattern is formed using dry etching.

  Next, the first transport unit 18 moves in the X direction and transports the workpiece 7 to the second cleaning unit 12. In this case, the first transport unit 18 transports the workpiece 7 with the surface S on which the pattern is formed facing downward. Next, the first transport unit 18 moves in the Y direction. Thereby, the 2nd washing | cleaning part 12 irradiates an ultraviolet-ray toward the surface S, and the said surface S is wash | cleaned.

  Next, the first transport unit 18 moves in the X direction after returning to the transport path 18 </ b> R, and transports the workpiece 7 to the self-assembled film forming unit 2. Next, the first transport unit 18 moves in the Y direction, and the work 7 is immersed in the first solution 22L containing the silane coupling agent with the surface S on which the pattern is formed facing downward. Alternatively, the self-assembled film 40 is formed by chemical adsorption on the inorganic thin film 5 by liquid phase or vapor phase growth with vapor from a solution containing a silane coupling agent, as shown in FIG. The self-assembled film 40 has another terminal functional group on the side opposite to the functional group chemisorbed on the surface of the inorganic thin film 5. In the self-assembled film 40, the molecular arrangement interval is determined by the van der Waals force of the alkyl group.

  Next, the first transport unit 18 returns to the transport path 18R, and delivers the workpiece 7 to the receiving mechanism 19A of the second transport unit 19. The second transport unit 19 rotates the received workpiece 7 by 90 degrees and holds the surface on which the self-assembled film 40 is formed in a state of being turned sideways.

  In this state, the second transport unit 19 moves in the X direction on the transport path 19R and transports the workpiece 7 to the cleaning unit 3. Next, the second transport unit 19 moves in the Y direction, immerses the workpiece 7 in the organic solvent 25L, and cleans the surface of the self-assembled film 40.

  Next, after returning to the transport path 19R, the second transport unit 19 moves in the X direction and transports the workpiece 7 to the metal ion layer forming unit 30. Next, the second transport unit 19 moves in the Y direction, immerses the work 7 in the second solution 32L, and forms a metal ion layer on the self-assembled film 40. In this case, the metal ions contained in the second solution 32L are chemically adsorbed on the terminal functional group of the self-assembled film 40.

  Next, after returning to the transport path 19R, the second transport unit 19 moves in the X direction and transports the workpiece 7 to the thin film plating layer forming unit 31. Subsequently, the 2nd conveyance part 19 moves to a Y direction, immerses the workpiece | work 7 in the plating bath 33L, and forms a thin film plating layer on a metal ion layer. In this way, as shown in FIG. 6, the conductive layer 41 is formed on the self-assembled film 40.

  Next, the second transport unit 19 moves in the X direction after returning to the transport path 19 </ b> R, and transports the work 7 to the work take-out unit 14.

  As described above, since the mold manufacturing apparatus 1 according to the present invention is configured to hold the inside of the processing chamber 15 in an inert gas atmosphere, oxygen, carbon, metal, etc. in the atmosphere adhere to the surface. Therefore, it is possible to prevent the self-assembled film 40 from being lost. Therefore, the mold manufacturing apparatus 1 can efficiently manufacture a mold having a nano-sized fine structure.

  Moreover, in the metal mold manufacturing apparatus 1, the self-assembled film 40 composed of the silane coupling agent is formed on the inorganic thin film 5 having the nano-sized pattern, so that the conductive layer 41 is uniformly formed on the pattern. can do. Therefore, since the plating can be more reliably embedded in the nano-sized pattern by electrolytic plating using the conductive layer 41 as an electrode, a mold having a nano-sized fine structure can be easily manufactured.

  In addition, since the energization layer 41 includes the metal ion layer and the thin film plating layer, it is possible to more reliably form an electrode required when the metal film is formed by electrolytic plating.

  In addition, the mold manufacturing apparatus 1 is configured to allow the workpiece 7 to enter and exit the first solution 22L at a speed of 10 mm / min to 100 mm / min, whereby a metal ion layer is formed on the surface of the self-assembled film 40. It can form more reliably.

  In addition, the mold manufacturing apparatus 1 prevents the solidification of metal ions by forming the metal ion layer using the second solution 32L having a metal ion concentration of 0.5 mM to 0.1 M. Thus, a uniform metal ion layer can be formed.

  In addition, the mold manufacturing apparatus 1 includes the second cleaning unit 12 that cleans the surface S of the inorganic thin film 5 before the self-assembled film 40 is formed, thereby cleaning the nano-sized fine surface. The self-organized film 40 can be formed without gaps.

  Further, the mold manufacturing apparatus 1 immerses the work 7 in the first solution 22L containing the silane coupling agent with the surface S having the fine structure facing downward, or the vapor of the first solution 22L is surfaced. By forming the self-assembled film 40 on S, the self-assembled film 40 can be more reliably formed on the inorganic thin film 5. Incidentally, when the surface S having a fine structure is turned sideways, there is a problem that a nonuniform film is formed due to the influence of a pressure gradient or the like.

  In addition, the mold manufacturing apparatus 1 forms a metal ion layer by immersing the workpiece 7 in the second solution 32L with the surface S having the fine structure facing sideways to form a metal ion layer. The metal ion layer can be more reliably formed on 40. Incidentally, when the surface S having a fine structure is turned downward, there is a problem that hydrogen generated during the formation of the metal film is not released well and remains in the film.

As shown in FIG. 7, the metal mold 42 is formed by forming the metal film 42 on the conductive layer 41 by a known method, for example, electrolytic Ni plating, and separating the conductive layer 41 and the inorganic thin film 5. As a result, a mold 43 including the energization layer 41 and the metal film 42 as shown in FIG. 8 can be obtained.
(Modification)
The present invention is not limited to the above-described embodiment, and can be appropriately changed within the scope of the gist of the present invention. For example, in the above embodiment, the case where the second cleaning unit 12 is configured to clean the surface S of the inorganic thin film 5 by irradiating ultraviolet rays has been described. However, the present invention is not limited thereto, and sputtering is used. The surface S of the inorganic thin film 5 may be cleaned.

  For example, in the case of the above-described embodiment, the case where the mold manufacturing method manufactures a mold having a two-dimensional structure made of unevenness is exemplified, but the present invention is not limited to this, and the self-assembled film is a pattern of a three-dimensional structure. In addition, a three-dimensional mold can be manufactured in the same manner.

  In the above embodiment, the case where the self-assembled film is formed by liquid phase growth has been described. However, the present invention is not limited thereto, and may be formed by vapor phase growth.

DESCRIPTION OF SYMBOLS 1 Mold manufacturing apparatus 2 Self-organized film formation part 3 Cleaning part 4 Current supply layer formation part 5 Inorganic thin film 22L 1st solution 30 Metal ion layer formation part 31 Thin film plating layer formation part 32L 2nd solution 40 Self-organization film 41 Current carrying layer 42 Metal film 43 Mold S Surface

Claims (6)

In a mold manufacturing apparatus for forming a metal film on an inorganic thin film having a microstructure and separating the metal film from the inorganic thin film to form a mold,
A self-assembled film containing a silane coupling agent having a functional group including one or more of amino group, mercapto group, thiol group, disulfide group, cyano group, halogen group, and sulfonic acid group is formed on the inorganic thin film. A self-assembled film forming section;
A cleaning section for cleaning the surface of the self-assembled film;
An energization layer forming portion for forming an energization layer on the self-assembled film,
The mold manufacturing apparatus, wherein the self-assembled film forming unit, the cleaning unit, and the energization layer forming unit are maintained in an inert gas atmosphere. The energization layer forming part is
A metal ion layer forming part for forming a metal ion layer containing any one or more of Au, Pd, Ag, Pt, Bi, and Pb on the self-assembled film;
The mold manufacturing apparatus according to claim 1, further comprising a thin film plating layer forming unit that forms a thin film plating layer on the metal ion layer. The self-assembled film forming unit includes a first silane coupling agent having a functional group including one or more of an amino group, a mercapto group, a thiol group, a disulfide group, a cyano group, a halogen group, and a sulfonic acid group. The inorganic thin film is immersed in the solution with the surface having the fine structure facing downward, or the vapor of the first solution containing a silane coupling agent is applied to the inorganic thin film, and a functional group is formed on the inorganic thin film. Forming a self-assembled film with
The metal ion layer forming portion is formed in the second solution containing one or more metal ions of Au, Pd, Ag, Pt, Bi, and Pb with the surface having the fine structure facing sideways. 3. The mold manufacturing apparatus according to claim 2, wherein the film is immersed.   4. The mold manufacturing apparatus according to claim 3, wherein the metal ion layer forming section causes the self-assembled film to enter and exit the second solution at a speed of 10 mm / min to 100 mm / min.   The mold manufacturing apparatus according to claim 3, wherein the second solution has a concentration of the metal ions of 0.5 mM to 0.1 M.   The mold manufacturing apparatus according to claim 1, further comprising a second cleaning unit that cleans the surface of the inorganic thin film before forming the self-assembled film.

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