JP2011176351A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a means which thins the thickness of a WCSP type semiconductor device having an electrode. <P>SOLUTION: In a semiconductor device which includes a semiconductor substrate 2, an electrode a pad 5 electrically connected to a circuit element formed on the front face of the semiconductor substrate, an interlayer insulating film 7 having a through-hole 8 which reaches the electrode pad, a metal underlayer 9 formed on the electrode pad and the interlayer insulating film including the through-hole, a wiring layer 10 formed on the metal underlayer which reaches an electrode forming region from the electrode pad, and a photosensitive seal film 12 which seals the front face side of the semiconductor substrate, the semiconductor device includes an interlayer insulating film projection 26 formed by projecting the metal underlayer side of the interlayer insulating film so that the electrode forming region 11 of the wiring layer is projected from the photosensitive seal film and an electrode 15 formed so as to cover a projection part of the wiring layer projected from the photosensitive seal film by the interlayer insulating film projection. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a small semiconductor device such as a WCSP (Wafer Level Chip Size Package) type in which a semiconductor wafer on which a plurality of circuit elements are formed is divided into individual pieces, and a method for manufacturing the same.

In recent years, there is an increasing demand for downsizing and thinning of a semiconductor device in which a plurality of semiconductor elements are integrated. In particular, in a semiconductor device requiring thinning, a spherical bump electrode is provided on the front surface of the semiconductor device. WCSP type semiconductor devices arranged in a lattice form are the mainstream, and semiconductor devices having a thickness of about 0.3 mm have been developed.
Such a conventional WCSP type semiconductor device has a circuit element formed on the front surface of a semiconductor substrate, and an electrode pad electrically connected to the circuit element on an insulating layer formed on the circuit forming surface. An interlayer insulating film having a through-hole reaching the electrode pad and a base metal layer are sequentially stacked thereon, and the post metal layer is formed on the base metal layer from the electrode pad to the post formation region. After wiring is formed, a post-forming hole is formed with a resist and a post having a height of about 100 μm is formed therein, and then a liquid sealing resin is injected over the entire front surface side of the semiconductor device and sealed. A resin layer is formed, its front surface is polished to expose the post end face of the post, and a semiconductor wafer having a hemispherical bump electrode formed on the post end face is divided into individual pieces (for example, , See Patent Document 1).

  There is also a WCSP type semiconductor device in which bump electrodes are formed without forming posts (see, for example, Patent Document 2 and Patent Document 3).

Japanese Patent Laid-Open No. 2003-60120 (mainly, page 6 paragraph 0047 to page 7 paragraph 0066, FIGS. 7 to 10) JP-A-11-195665 US Pat. No. 6,621,164

  However, in the technique of the conventional Patent Document 1 described above, a post having a thickness of about 100 μm is formed, and this is sealed with a sealing resin layer, and a bump electrode as an electrode is formed on the post end surface exposed by polishing. Therefore, the thickness of the sealing resin layer after polishing is about 90 μm, the thickness of the sealing resin layer in the thickness of the semiconductor device (about 30%) is large, and it is difficult to reduce the thickness of the semiconductor device. There's a problem.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide means for reducing the thickness of a WCSP type semiconductor device having electrodes.

  In order to solve the above problems, the present invention includes a semiconductor substrate, an electrode pad electrically connected to a circuit element formed on the front surface of the semiconductor substrate, and a through hole reaching the electrode pad. An interlayer insulating film, a base metal layer formed on the interlayer insulating film including the electrode pad and the through hole, and a base metal layer formed on the electrode pad and reaching the electrode formation region. In a semiconductor device comprising a wiring layer and a photosensitive sealing film that seals the front surface side of the semiconductor substrate, so that an electrode formation region of the wiring layer protrudes from the photosensitive sealing film, An interlayer insulating film protrusion formed by protruding the base metal layer side of the interlayer insulating film and a protruding portion of the wiring layer protruding from the photosensitive sealing film by the interlayer insulating film protrusion are formed. Equipped with the electrode And butterflies.

  Thereby, the present invention can easily form a thin photosensitive sealing film that covers the front side of the device in a state where the wiring layer is projected by utilizing the photosensitivity of the photosensitive sealing film, The thickness of the WCSP type semiconductor device having an electrode can be reduced, and the electrode covering the projecting portion can be used to strengthen the bonding with the projecting portion. The effect that can be improved is obtained.

Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 1. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 1. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 2. FIG. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 2. FIG. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 3. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 3. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 3. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 4. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 4. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 5. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 5. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 6. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 6. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 7. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 7. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 7. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 8. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 8. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 8. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 9. Explanatory drawing which shows the manufacturing process of the semiconductor device of Example 9.

  Embodiments of a semiconductor device and a manufacturing method thereof according to the present invention will be described below with reference to the drawings.

1 and 2 are explanatory views showing the manufacturing process of the semiconductor device of the first embodiment.
1 and 2 are partial sectional views showing the vicinity of an electrode pad formed on a semiconductor wafer and a bump electrode connected to the electrode pad through rewiring or the like (the same applies to other drawings). .
1 and 2, reference numeral 1 denotes a semiconductor wafer, which is a semiconductor wafer for simultaneously manufacturing a plurality of WCSP type semiconductor devices.

A semiconductor substrate 2 made of silicon of the semiconductor wafer 1 has a front surface (first surface) and a back surface (second surface), and a semiconductor element (not shown) is provided on the front surface. A plurality of circuit elements connected to each other by wiring are formed (the front surface (first surface) of the semiconductor substrate 2 on which the circuit elements are formed is referred to as a circuit forming surface 3).
Reference numeral 4 denotes an insulating layer formed of silicon dioxide or the like, which is formed on the circuit formation surface 3 of the semiconductor substrate 2, and a contact hole (not shown) is formed above each circuit element formed on the semiconductor substrate 2. . A conductive layer (not shown) is formed inside the contact hole.

An electrode pad 5 made of aluminum or the like on the insulating layer 4 is electrically connected to a corresponding circuit element through a conductive layer formed in the contact hole.
Reference numeral 6 denotes a surface protective film formed of silicon nitride or the like, and is a protective film that covers the upper portion of the insulating layer 4 and the edge of the electrode pad 5.
7 is an interlayer insulating film formed of polyimide or the like on the surface protective film 6, and a through hole 8 reaching the electrode pad 5 is formed on the electrode pad 5, and stress applied to the semiconductor substrate 2 It has a function to relax.

A base metal layer 9 as a first metal layer is formed on the entire front surface side of the semiconductor wafer 1 by being divided into a plurality of layers by sputtering or the like. The inner surface and the electrode pad 5 are covered.
Reference numeral 10 denotes rewiring as a wiring layer, and a region (electrode formation) for forming a bump electrode 15 (described later) as an electrode connected to the electrode pad 5 from the electrode pad 5 of the base metal layer 9 with a resist mask 17 described later. The region 11 is referred to as a region 11) and is formed by electrodepositing copper by electroplating using the base metal layer 9 as one common electrode on the base metal layer 9 exposed by masking the region excluding the upper part. It is a wiring pattern, and is electrically connected via the electrode pad 5 and the base metal layer 9.

  Reference numeral 12 denotes a photosensitive sealing film as a protective layer, which has a negative or positive type photosensitivity which has the property of being insoluble or dissolving in a developer by being modified by irradiation with light such as ultraviolet rays such as epoxy or polyimide. An electrically insulating film formed by curing a photosensitive sealing resin, and the front surface side of the semiconductor substrate 2 is sealed. In this embodiment, the photosensitive resin is cured by a negative-type photosensitive sealing resin that cures the portion irradiated with ultraviolet rays using polybenzoxazole and becomes insoluble in the developer.

Reference numeral 13 denotes an electrode forming hole serving as an opening, which re-throughs the photosensitive sealing film 12 formed in the electrode forming region 11 using the photosensitivity of the photosensitive sealing film 12 and reaches the rewiring 10. A hole for exposing a part of the wiring 10, and an electrode formation region 11 of the rewiring 10 is exposed at the bottom thereof, and a solder ball is melted on the rewiring 10 to directly form a bump electrode 15. The
Reference numeral 17 denotes a resist mask, which is a mask member formed by exposing a positive type or negative type resist applied to the front surface of the semiconductor wafer 1 by photolithography and then developing the resist.

A method for manufacturing the semiconductor device of this example will be described below in accordance with the process indicated by P in FIGS.
P1 (FIG. 1), a plurality of circuit elements (not shown) are formed on the circuit forming surface 3 of the circular semiconductor substrate 2 formed by slicing cylindrical silicon, and contact holes (not shown) are formed above the circuit elements. An insulating layer 4 provided is formed, an aluminum film is deposited on the insulating layer 4 by sputtering, and this is etched into a predetermined shape to form a conductive layer (not shown) formed in a predetermined portion of the circuit element and a contact hole Electrode pads 5 to be electrically connected via the electrode are formed.

  After the formation of the electrode pad 5, a surface protective film 6 made of a silicon nitride film is formed on the electrode pad 5 and the insulating layer 4 by a CVD (Chemical Vapor Deposition) method, and the portion of the electrode pad 5 is removed by etching, thereby protecting the surface. An interlayer insulating film 7 made of polyimide is formed on the film 6 and the electrode pad 5, and a portion of the electrode pad 5 is removed by etching to form a through hole 8 reaching the electrode pad 5.

P2 (FIG. 1), a base metal layer 9 composed of a plurality of layers covering the interlayer insulating film 7 and the electrode pad 5 is formed on the front surface side of the semiconductor wafer 1 by sputtering.
P3 (FIG. 1), a resist mask 17 is formed in a region excluding a portion where the rewiring 10 is formed from the electrode pad 5 to the electrode formation region 11 of the base metal layer 9 using a positive or negative resist by lithography Then, copper is electrodeposited by electroplating using the base metal layer 9 as one common electrode on the exposed base metal layer 9, and rewiring 10 extending from the electrode pad 5 to the electrode formation region 11 is formed. Form.

The resist mask 17 formed in step P3 is removed using a removal solvent such as P4 (FIG. 1) and acetone.
P5 (FIG. 2) and the base metal layer 9 in the region excluding the rewiring 10 are removed by plasma etching in an oxygen gas atmosphere.
P6 (FIG. 2), using a photomask in which a photosensitive sealing resin using polybenzoxazole is applied to the entire front surface side of the semiconductor wafer 1 by spin coating, and the electrode forming region 11 is shielded from light. The applied photosensitive sealing resin is irradiated with ultraviolet rays, and the region excluding the electrode forming region 11 is exposed and cured, and the unphotosensitive photosensitive sealing resin is removed by a development process to remove a photosensitive seal of about 5 μm. In addition to forming the film 12, an electrode forming hole 13 having a diameter of about 200 μm is formed in the electrode forming region 11 of the photosensitive sealing film 12 so as to penetrate the photosensitive sealing film 12 and reach the rewiring 10.

  P7 (FIG. 2), flux is applied to the rewiring 10 exposed at the bottom of each electrode formation hole 13 of the photosensitive sealing film 12 formed on the front surface side of the semiconductor wafer 1, and each electrode formation region 11 is mounted with a solder ball mounting jig (not shown) having a diameter substantially equal to that of the semiconductor wafer 1 having a guide hole having a diameter slightly larger than the diameter of the solder ball. The solder balls are placed in the electrode forming holes 13 of the sealing film 12 and the solder balls are melted by heat treatment after the solder ball mounting jig is removed. A bump electrode 15 that is directly bonded on the formation region 11 and protrudes in a hemispherical shape from the front surface of the photosensitive sealing film 12 is formed.

Through the above steps, a semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into pieces is formed is formed, and this semiconductor wafer 1 is cut into pieces vertically and horizontally to be divided into pieces. The device is manufactured.
The thus formed semiconductor device of the present embodiment has the rewiring 10 on the front surface of the photosensitive sealing film 12, that is, the front surface of the semiconductor device (referred to as the device front surface). A WCSP type semiconductor device in which a plurality of directly bonded bump electrodes 15 are projected and arranged is formed, and since a thick sealing resin layer for sealing the post is not formed, a thin semiconductor device (for example, about 0.22 mm) can do.

In addition, since the front surface side of the apparatus is sealed with the photosensitive sealing film 12, the electrode forming hole 13 for forming the bump electrode 15 using the photosensitivity of the photosensitive sealing film 12. Can be easily formed.
Further, since the solder balls placed on the electrode forming holes 13 after the flux is applied are melted, it is possible to prevent the entry of air or the like into the joints, and the rewiring 10 and the bump electrodes 15 can be joined well. Can be.

Furthermore, the process of forming a resist for forming a post, the process of forming a post, the process of removing the resist, and the process of polishing the front surface of the sealing resin layer are no longer necessary, reducing the number of processes. Thus, the manufacturing time of the semiconductor device can be shortened, and the manufacturing efficiency of the WCSP type semiconductor device can be improved.
As described above, in this embodiment, an electrode formation hole that reaches the rewiring through the electrode formation region of the photosensitive sealing film covering the front side of the device is formed, and is exposed to the bottom thereof. By directly bonding the bump electrode on the wiring, it is possible to easily form an electrode formation hole for forming the bump electrode by utilizing the photosensitivity of the photosensitive sealing film, and on the rewiring. The bump electrodes can be directly bonded to each other to cover the front side of the device with a thin photosensitive sealing film, and the thickness of the WCSP type semiconductor device having the bump electrodes can be reduced.

3 and 4 are explanatory views showing the manufacturing steps of the semiconductor device of the second embodiment.
In addition, the same part as the said Example 1 attaches | subjects the same code | symbol, and abbreviate | omits the description.
In FIG. 4, reference numeral 21 denotes a rewiring protrusion as a wiring layer protrusion, which is a columnar protrusion formed in the electrode formation region 11 of the rewiring 10 with the same material as the rewiring 10.
A method for manufacturing the semiconductor device of this example will be described below in accordance with the process indicated by PA in FIGS.

Step PA1 to step PA4 shown in FIG. 3 of the present embodiment are the same as steps P1 to P4 shown in FIG.
A resist mask 17 is formed on the underlying metal layer 9 and the rewiring 10 except for the electrode forming area 11 of the rewiring 10 by using a positive type or negative resist by PA5 (FIG. 4) and exposed. On the rewiring 10, copper is electrodeposited by electroplating using the base metal layer 9 as one common electrode to form the rewiring protrusion 21.

The resist mask 17 formed in step PA5 is removed using PA6 (FIG. 4) and a removal solvent, and the base metal layer 9 in the region excluding the rewiring 10 and the rewiring protrusion 21 is formed in the same manner as in step P5 of the first embodiment. Remove.
PA7 (FIG. 4), a photosensitive sealing resin is applied to the entire front surface of the semiconductor wafer 1 by spin coating, and the applied photosensitive sealing resin is irradiated with ultraviolet rays to remove the rewiring protrusions 21. The region is exposed and cured, and unexposed photosensitive sealing resin is removed by a development process, and the rewiring protrusion 21 protrudes from the photosensitive sealing film 12, and the photosensitive sealing film 12 of about 5 μm is formed. Form.

PA8 (FIG. 4), a flux is applied to each rewiring protrusion 21 protruding from the front surface of the semiconductor wafer 1, and the tip of the rewiring protrusion 21 is applied by a solder ball mounting jig in the same manner as in step P7 of the first embodiment. A solder ball is placed on the surface, and the solder ball is melted by heat treatment to form a hemispherical bump electrode 15 so as to cover the protruding portion of the rewiring protrusion 21 from the photosensitive sealing film 12.
Through the above steps, a semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into pieces is formed is formed, and this semiconductor wafer 1 is cut into pieces vertically and horizontally to be divided into pieces. The device is manufactured.

The semiconductor device of this embodiment formed in this way is of a WCSP type in which a plurality of bump electrodes 15 that are electrically connected to the rewiring 10 via the rewiring projections 21 are arranged on the front surface of the device. Since it becomes a semiconductor device and the front surface of the device is sealed with a thin photosensitive sealing film, a thin semiconductor device can be obtained.
Further, since the front surface side of the device is sealed with the photosensitive sealing film 12, a thin photosensitive sealing covering the front surface side of the device by utilizing the photosensitivity of the photosensitive sealing film 12. The stop film can be easily formed with the rewiring projection 21 protruding, and the process of polishing the front surface of the encapsulating resin layer is not required, reducing the number of processes and reducing the number of processes. The manufacturing time can be shortened and the manufacturing efficiency of the WCSP type semiconductor device can be improved.

Further, since the hemispherical bump electrode 15 is formed so as to cover the protruding portion of the rewiring protrusion 21 protruding from the photosensitive sealing film 12, the bonding between the bump electrode 15 and the rewiring protrusion 21 is strengthened. In addition, it is possible to improve the reliability of the semiconductor device such as connection reliability by relieving the external stress after being mounted on the mother board or the like by the rewiring protrusion 21.
As described above, in this embodiment, the rewiring protrusion is formed in the electrode formation region on the rewiring so as to protrude from the photosensitive sealing film covering the front side of the device, and the protruding portion of the rewiring protrusion By forming the bump electrode so as to cover the thin film, the thin photosensitive sealing film that covers the front side of the device with the rewiring projection protruding using the photosensitivity of the photosensitive sealing film Can be easily formed, the thickness of the WCSP type semiconductor device having the bump electrode can be reduced, and the bonding with the rewiring protrusion can be strengthened by the bump electrode covering the protruding portion. In addition, the reliability of the semiconductor device such as connection reliability can be improved.

5, FIG. 6 and FIG. 7 are explanatory views showing the manufacturing process of the semiconductor device of the third embodiment.
In addition, the same part as the said Example 1 attaches | subjects the same code | symbol, and abbreviate | omits the description.
In FIG. 6, reference numeral 23 denotes a second base metal layer as a second metal layer. The base metal layer 9 of the first embodiment (in this embodiment, the first base metal layer 23 is distinguished from the second base metal layer 23 for the sake of distinction). The base metal layer 9 is formed on the entire surface of the photosensitive sealing film 12 in the same manner as that of the base metal layer 9). Etching is performed so as to cover the exposed rewiring 10 and the inner peripheral surface of the electrode forming hole 13.

Reference numeral 24 denotes a rewiring projection, which is a stepped circle having a large diameter portion and a small diameter portion formed in the electrode formation region 11 of the second base metal layer 23 on the rewiring 10 with the same material as the rewiring 10. It is a columnar projection.
A method for manufacturing the semiconductor device of this example will be described below in accordance with the process indicated by PB in FIG. 5, FIG. 6, and FIG.

Steps PB1 to PB6 shown in FIG. 5 and FIG. 6 of the present embodiment are the same as steps P1 to P6 shown in FIG. 1 and FIG. In this case, the first base metal layer 9 is formed on the entire front surface side of the semiconductor substrate 2 in the process PB2.
PB7 (FIG. 6), a second base metal layer 23 composed of a plurality of layers is formed by sputtering on the entire surface on the front side of the apparatus, and is exposed on the photosensitive sealing film 12 and the bottom of the electrode formation hole 13. The second base metal layer 23 covers the rewiring 10 and the inner peripheral surface of the electrode formation hole 13.

  PB8 (FIG. 6), a resist mask 17 is formed on the second base metal layer 23 in a region excluding the electrode forming region hole 13 and the edge of the opening by using a positive or negative resist by lithography and exposed. On the second base metal layer 23, copper is electrodeposited by electroplating using the second base metal layer 23 as one common electrode to form the rewiring protrusions 24. As a result, the large-diameter portion of the rewiring protrusion 24 becomes a protruding portion protruding from the photosensitive sealing film 12.

The resist mask 17 formed in step PB8 is removed using PB9 (FIG. 7) and a removal solvent, and the second base metal layer 23 in the region excluding the rewiring protrusions 24 is removed in the same manner as in step P5 of the first embodiment. To do.
Flux is applied to each rewiring protrusion 24 protruding from the front surface of the PB 10 (FIG. 7) and the semiconductor wafer 1, and the rewiring protrusion 24 is formed by a solder ball mounting jig in the same manner as in Step P7 of the first embodiment. A solder ball is placed on the tip, and the solder ball is melted by heat treatment to form a hemispherical bump electrode 15 so as to cover the protruding portion (large diameter portion) of the rewiring protrusion 24 from the photosensitive sealing film 12. .

Through the above steps, a semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into pieces is formed is formed, and this semiconductor wafer 1 is cut into pieces vertically and horizontally to be divided into pieces. The device is manufactured.
The semiconductor device of this embodiment formed in this way has a plurality of bump electrodes 15 electrically connected to the rewiring 10 via the rewiring protrusions 24 and the second base metal layer 23 on the front surface of the device. Since the WCSP type semiconductor device is arranged so as to protrude and the front surface of the device is sealed with a thin photosensitive sealing film, a thin semiconductor device can be obtained.

Further, since the front surface side of the device is sealed with the photosensitive sealing film 12, the electrode forming hole 13 can be easily formed as in the first embodiment.
Further, the rewiring protrusion 24 is exposed to the bottom of the electrode forming hole 13 through the second base metal layer 23, and the edge of the opening of the electrode forming hole 13 on the photosensitive sealing film 12 and the electrode The hemispherical bump electrode 15 is formed so as to be bonded to the inner peripheral surface of the formation hole 13 and cover the protruding portion of the rewiring protrusion 24 protruding from the photosensitive sealing film 12. The bonding between the electrode 15 and the rewiring protrusion 24 can be strengthened, the installation strength of the rewiring protrusion 24 to the semiconductor device 1 can be increased, and the reliability of the semiconductor device such as connection reliability can be further improved. be able to.

  As described above, in this embodiment, an electrode formation hole that reaches the rewiring through the electrode formation region of the photosensitive sealing film covering the front side of the device is formed, and is exposed to the bottom thereof. A second base metal layer is formed on the wiring, the inner peripheral surface of the electrode formation hole, and the edge of the opening of the electrode formation hole on the photosensitive sealing film, and the photosensitive seal is formed on the second base metal layer. In order to form the bump electrode by utilizing the photosensitivity of the photosensitive sealing film by forming the rewiring protrusion so as to protrude from the stop film and forming the bump electrode so as to cover the protruding portion. The electrode formation hole can be easily formed, and the bump electrode covering the protruding portion can be used to strengthen the bonding with the rewiring protrusion, and the installation strength of the rewiring protrusion to the semiconductor device can be increased. Further, the reliability of the semiconductor device such as connection reliability can be further improved.

8 and 9 are explanatory views showing the manufacturing steps of the semiconductor device of the fourth embodiment.
In addition, the same part as the said Example 1 attaches | subjects the same code | symbol, and abbreviate | omits the description.
In FIG. 8, reference numeral 26 denotes an interlayer insulating film protrusion, which is a columnar protrusion formed in the electrode formation region 11 of the interlayer insulating film 7 together with the interlayer insulating film 7 using a negative photosensitive resin such as polyimide.
A method for manufacturing the semiconductor device of this example will be described below in accordance with the steps indicated by PC in FIGS.

PC1 (FIG. 8), surface protective film 6 from which a plurality of circuit elements and insulating layer 4, electrode pad 5 and electrode pad 5 portions of circuit forming surface 3 of semiconductor substrate 2 are removed in the same manner as in step P1 of Example 1. Form.
Then, a negative photosensitive resin made of polyimide is applied to the surface protective film 6 and the electrode pad 5 by spin coating relatively thickly, and the photosensitive resin is applied using a photomask that shields the through hole 8 from light. Is irradiated with ultraviolet light, and a photosensitive resin corresponding to the thickness of the interlayer insulating film 7 is exposed and cured, and then the interlayer is formed by using a photomask that shields light from the region other than the interlayer insulating film protrusions 26 in the electrode forming region 11. The photosensitive resin at the portion of the insulating film protrusion 26 is further exposed to such a thickness that the rewiring 10 on the interlayer insulating film protrusion 26 formed in step PC3 described later protrudes from the front surface of the photosensitive sealing film 12. The unexposed photosensitive resin is removed by curing and a through hole 8 reaching the electrode pad 5, the interlayer insulating film 7 and the interlayer insulating film protrusion 26 are formed.

PC2 (FIG. 8) and the base metal layer 9 covering the interlayer insulating film projections 26 and the interlayer insulating film 7 and the electrode pads 5 are formed in the same manner as in the process P2 of the first embodiment.
PC3 (FIG. 8), a base metal in a region excluding a portion where the rewiring 10 is formed from the electrode pad 5 to the electrode formation region 11 on the interlayer insulating film projection 26 using a positive or negative resist by lithography. A resist mask 17 is formed on the layer 9, and the rewiring 10 extending from the electrode pad 5 to the electrode formation region 11 on the interlayer insulating film projection 26 is formed in the same manner as in the process P 3 of the first embodiment.

The resist mask 17 formed in step PC3 is removed using PC4 (FIG. 8) and a removal solvent.
PC 5 (FIG. 9) and the base metal layer 9 in the region excluding the rewiring 10 are removed in the same manner as in step P5 of the first embodiment.
PC 6 (FIG. 9), a photosensitive sealing resin is applied to the entire front surface side of the semiconductor wafer 1 by spin coating, and the applied photosensitive sealing resin is irradiated with ultraviolet rays, and interlayer insulation of the rewiring 10 is performed. The region excluding the electrode formation region 11 protruding by the film protrusion 26 is exposed and cured, and the unphotosensitive photosensitive sealing resin is removed by a development process so that the electrode formation region 11 of the rewiring 10 becomes the photosensitive sealing film 12. A photosensitive sealing film 12 having a thickness of about 5 μm is formed in a state protruding from the surface.

  Flux is applied to the electrode forming region 11 of each rewiring 10 that protrudes from the front surface of the PC 7 (FIG. 9) and the semiconductor wafer 1, and is re-used by a solder ball mounting jig in the same manner as in Step P7 of Example 1. A solder ball is placed on the tip of the electrode formation region 11 of the wiring 10, and the solder ball is melted by heat treatment to cover the protruding portion from the photosensitive sealing film 12 of the rewiring 10 with a hemispherical bump electrode 15. Form.

Through the above steps, a semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into pieces is formed is formed, and this semiconductor wafer 1 is cut into pieces vertically and horizontally to be divided into pieces. The device is manufactured.
The semiconductor device of this embodiment formed in this way is of the WCSP type in which a plurality of bump electrodes 15 covering the protruding portion of the rewiring 10 from the photosensitive sealing film 12 are arranged to protrude on the front surface of the device. Since it becomes a semiconductor device and the front surface of the device is sealed with a thin photosensitive sealing film, a thin semiconductor device can be obtained.

Further, since the front surface side of the device is sealed with the photosensitive sealing film 12, a thin photosensitive sealing covering the front surface side of the device by utilizing the photosensitivity of the photosensitive sealing film 12. The stop film can be easily formed with the rewiring 10 protruding.
Further, in process PC1, a negative photosensitive resin is applied relatively thickly, and ultraviolet rays are irradiated twice using a photomask having a different light-shielding region to form the interlayer insulating film 7 and the interlayer insulating film protrusions 26. Forming the resist for forming the post by forming it in one step, forming the post, removing the resist, polishing the front surface of the sealing resin layer, etc. Can be eliminated, the number of steps can be reduced, the manufacturing time of the semiconductor device can be shortened, and the manufacturing efficiency of the WCSPC type semiconductor device can be improved.

Further, since the bump electrode 15 having a hemispherical shape is formed so as to cover the protruding portion of the rewiring 10 protruding from the photosensitive sealing film 12 by the interlayer insulating film protrusion 26, the bonding between the bump electrode 15 and the rewiring 10 is performed. It is possible to increase the reliability of the semiconductor device such as connection reliability by relieving the external stress after being mounted on the mother substrate or the like by the rewiring 10.
As described above, in this embodiment, the interlayer insulating film protrusion is provided, thereby forming the rewiring so as to protrude from the photosensitive sealing film covering the front surface of the device, and the protruding portion of the rewiring is formed. By forming the bump electrode so as to cover it, it is easy to make a thin photosensitive sealing film that covers the front side of the device with the rewiring protruding using the photosensitivity of the photosensitive sealing film The thickness of the WCSP type semiconductor device having the bump electrode can be reduced, and the bump electrode covering the protruding portion can strengthen the bonding with the rewiring, and the connection Reliability of the semiconductor device such as reliability can be improved.

10 and 11 are explanatory views showing the manufacturing process of the semiconductor device of the fifth embodiment.
In addition, the same part as the said Example 1 attaches | subjects the same code | symbol, and abbreviate | omits the description.
In FIG. 10, reference numeral 30 denotes a protrusion piece, which is a cylindrical protrusion formed in the electrode forming region 11 of the base metal layer 9 with the same material as the rewiring 10 in order to protrude the rewiring 10 from the photosensitive sealing film 12. It is.

A method for manufacturing the semiconductor device of this example will be described below in accordance with the steps indicated by PD in FIGS.
Step PD1 and step PD2 shown in FIG. 10 of the present embodiment are the same as steps P1 and P2 shown in FIG.
PD3 (FIG. 10), a resist mask 17 is formed on the base metal layer 9 in a region excluding a portion where the projection top 30 of the electrode formation region 11 of the base metal layer 9 is formed by using a positive type or negative type resist by lithography. Then, the rewiring 10 on the protruding piece 30 is formed on the exposed base metal layer 9 by using the base metal layer 9 as one common electrode and forming the same metal as the rewiring 10 in the process PD5 described later by electroplating. Electrodeposition is performed to a thickness that protrudes from the front surface of the photosensitive sealing film 12, and a protrusion piece 30 is formed on the base metal layer 9.

The resist mask 17 formed in step PD3 is removed using PD4 (FIG. 10) and a removal solvent.
PD5 (FIG. 11), a base metal layer in a region excluding a portion where the rewiring 10 is formed from the electrode pad 5 to the electrode forming region 11 including the protrusion top 30 using a positive or negative resist by lithography. A resist mask 17 is formed on the electrode 9, and the rewiring 10 is formed from the electrode pad 5 to the electrode formation region 11 including the protruding coma 30 in the same manner as in the process P3 of the first embodiment.

The resist mask 17 formed in step PD5 is removed using PD6 (FIG. 11) and a removal solvent, and the base metal layer 9 in the region excluding the rewiring 10 is removed in the same manner as in step P5 of the first embodiment.
PD7 (FIG. 11), in the same manner as in step PC6 of Example 4, with the electrode forming region 11 of the rewiring 10 protruding from the protruding piece 30 protruding from the photosensitive sealing film 12, the photosensitive sealing of about 5 μm. A stop film 12 is formed.

In the same manner as PD 8 (FIG. 11) and process PC 7 of Example 4, a hemispherical shape is formed so as to cover the protruding portion from the photosensitive sealing film 12 of each rewiring 10 protruding on the front surface of the semiconductor wafer 1. A bump electrode 15 is formed.
Through the above steps, a semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into pieces is formed is formed, and this semiconductor wafer 1 is cut into pieces vertically and horizontally to be divided into pieces. The device is manufactured.

The semiconductor device of this embodiment formed in this way is of the WCSP type in which a plurality of bump electrodes 15 covering the protruding portion of the rewiring 10 from the photosensitive sealing film 12 are arranged to protrude on the front surface of the device. Since it becomes a semiconductor device and the front surface of the device is sealed with a thin photosensitive sealing film, a thin semiconductor device can be obtained.
Further, since the front surface side of the device is sealed with the photosensitive sealing film 12, a thin photosensitive sealing covering the front surface side of the device by utilizing the photosensitivity of the photosensitive sealing film 12. The formation of the stop film can be easily performed with the rewiring 10 protruding, and the process of polishing the front surface of the sealing resin layer is no longer necessary, thereby reducing the number of processes and manufacturing the semiconductor device. The time can be shortened and the manufacturing efficiency of the WCSP type semiconductor device can be improved.

Further, since the bump electrode 15 having a hemispherical shape is formed so as to cover the protruding portion of the rewiring 10 protruded from the photosensitive sealing film 12 by the protrusion piece 30, the bonding between the bump electrode 15 and the rewiring 10 is made strong. It is possible to relieve external stress after being mounted on a mother board or the like by the rewiring 10 and to improve the reliability of the semiconductor device such as connection reliability.
As described above, in this embodiment, a protruding piece is provided on the base metal layer, thereby forming a rewiring so as to protrude from the photosensitive sealing film covering the front side of the device. By forming the bump electrode so as to cover the protruding part, a thin photosensitive sealing that covers the front side of the device with the rewiring protruding using the photosensitivity of the photosensitive sealing film The film can be easily formed, the thickness of the WCSP type semiconductor device having the bump electrode can be reduced, and the bonding with the rewiring can be strengthened by the bump electrode covering the protruding portion. In addition, the reliability of the semiconductor device such as connection reliability can be improved.

12 and 13 are explanatory views showing the manufacturing process of the semiconductor device of the sixth embodiment.
In addition, the same part as the said Example 1 and Example 5 attaches | subjects the same code | symbol, and abbreviate | omits the description.
In FIG. 12, 32 is a resist mask, which is a resist mask formed of a positive resist.

A method for manufacturing the semiconductor device of this example will be described below in accordance with the steps indicated by PE in FIGS.
Step PE1 and step PE2 shown in FIG. 12 of the present embodiment are the same as steps P1 and P2 shown in FIG.
PE3 (FIG. 12), a positive resist was applied onto the base metal layer 9 by spin coating, and after drying this, the region excluding the projecting piece 30 portion of the electrode formation region 11 of the base metal layer 9 was shielded from light. The resist dried by using a photomask is exposed to ultraviolet rays to be exposed, and the resist exposed by the development process is removed to expose the base metal layer 9 where the projection top 30 is to be formed. Using the resist mask 32 that covers the region excluding the region where the top 30 is to be formed as a mask, the protruding top 30 is formed on the base metal layer 9 in the same manner as in step PD3 of the fifth embodiment.

  PE4 (FIG. 12), except for the portion of the resist mask 32 formed in step PE3 for forming the protrusion piece 30 where the rewiring 10 from the electrode pad 5 to the electrode formation region 11 including the protrusion piece 30 is formed. Reexposure (first exposure) is performed using a photomask with the area shielded, the resist mask 32 exposed by the development process is removed, and the underlying metal layer 9 at the part where the rewiring 10 is to be formed is exposed. A resist mask 32 is formed to cover the film.

In the same manner as PE5 (FIG. 13) and step PD5 of the fifth embodiment, a rewiring 10 is formed from the electrode pad 5 to the electrode formation region 11 including the protruding top 30.
The subsequent steps PE6 to PE8 shown in FIG. 13 are the same as the steps PD6 to PD8 of the fifth embodiment, and thus description thereof is omitted.
Through the above steps, the semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into individual pieces is formed is formed, and the semiconductor wafer 1 is cut vertically and horizontally and divided into individual pieces as in the fifth embodiment. The semiconductor device of this embodiment is manufactured.

  As described above, in this embodiment, in addition to the same effects as those of the above-described embodiment 5, the process of forming the rewiring without removing the resist mask for forming the protrusion top by making the resist positive. By reusing by re-exposure, the resist forming process can be reduced to one time, the manufacturing efficiency of the WCSP type semiconductor device can be improved, and the indirect material cost can be reduced. .

14, FIG. 15 and FIG. 16 are explanatory views showing the manufacturing process of the semiconductor device of the seventh embodiment.
In addition, the same part as the said Example 1 and Example 5 attaches | subjects the same code | symbol, and abbreviate | omits the description.
In FIG. 15, reference numeral 34 denotes a barrier metal layer, which is a barrier metal film made of nickel, palladium, gold or the like, covering the entire surface excluding the bonding surface with the underlying metal layer 9 such as the rewiring 10 and the like. It has a function of preventing current leakage between the rewirings 10 due to moisture absorption of the conductive sealing film 12 and the interlayer insulating film 7.

A method for manufacturing the semiconductor device according to the present embodiment will be described below in accordance with the steps indicated by PF in FIGS.
Steps PF1 to PF5 shown in FIGS. 14 and 15 of the present embodiment are the same as steps PD1 to PD5 shown in FIGS.
The resist mask 17 formed in step PF5 is removed using PF6 (FIG. 15) and a removal solvent.

A resist mask 17 is formed on the base metal layer 9 in a region excluding a portion where the rewiring 10 and the surrounding barrier metal layer 34 are to be formed using PF7 (FIG. 15) and a positive type or negative type resist by lithography.
A barrier metal is electrodeposited by electroplating using the base metal layer 9 as one common electrode on the exposed base metal layer 9 and the rewiring 10 on the PF8 (FIG. 15), and the base metal layer 9 of the rewiring 10 A barrier metal layer 34 is formed to cover the entire surface except the bonding surface.

The resist mask 17 formed in step PF7 is removed using PF9 (FIG. 16) and a removal solvent, and the base metal layer 9 in the region excluding the rewiring 10 is removed in the same manner as in step P5 of the first embodiment.
The PF 10 (FIG. 16), a state in which the rewiring 10 covered with the barrier metal layer 34 with the electrode forming region 11 protruding by the protruding piece 30 protrudes from the photosensitive sealing film 12 in the same manner as the process PC 6 of Example 4. Thus, a photosensitive sealing film 12 having a thickness of about 5 μm is formed.

Protrusion from the photosensitive sealing film 12 of the rewiring 10 covered with each barrier metal layer 34 projecting from the front surface of the semiconductor wafer 1 in the same manner as in the process PC7 of PF11 (FIG. 16) and Example 4. A hemispherical bump electrode 15 is formed so as to cover the portion.
Through the above steps, a semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into pieces is formed is formed, and this semiconductor wafer 1 is cut into pieces vertically and horizontally to be divided into pieces. The device is manufactured.

The semiconductor device of this embodiment formed in this way has a plurality of bump electrodes 15 covering the protruding portion of the rewiring 10 covered with the barrier metal layer 34 from the photosensitive sealing film 12 on the front surface of the device. The WCSP type semiconductor device is arranged in a protruding manner, and the front surface of the device is sealed with a thin photosensitive sealing film, so that the semiconductor device can be made thin.
Further, since the front surface side of the device is sealed with the photosensitive sealing film 12, a thin photosensitive sealing covering the front surface side of the device by utilizing the photosensitivity of the photosensitive sealing film 12. The stop film can be easily formed in a state where the rewiring 10 covered with the barrier metal layer 34 is projected.

  Further, since the bump electrode 15 having a hemispherical shape is formed so as to cover the protruding portion of the rewiring 10 covered with the barrier metal layer 34 protruded from the photosensitive sealing film 12 by the protruding piece 30, the bump electrode 15 and the barrier A semiconductor device such as a connection reliability can be obtained by strengthening the bonding with the rewiring 10 covered with the metal layer 34 and relaxing the external stress after mounting on the mother substrate or the like with the rewiring 10. Reliability can be improved.

Furthermore, by forming a barrier metal layer 34 that covers the entire surface of the rewiring 10 except the bonding surface with the base metal layer 9, the moisture absorbed by the photosensitive sealing film 12 and the interlayer insulating film 7 is regenerated. It is possible to suppress the current leakage between the rewirings 10 due to moisture absorption by suppressing the reaction with copper, which is the material of the wirings 10, and to improve the moisture resistance reliability of the semiconductor device.
As described above, in this embodiment, in addition to the same effect as that of the fifth embodiment, the barrier metal layer covering the entire surface except the bonding surface with the base metal layer of the rewiring is formed. It is possible to suppress the current leakage between rewiring due to moisture absorption by suppressing the reaction between the moisture absorbed by the photosensitive sealing film and interlayer insulating film and the material of the rewiring, and the moisture resistance reliability of the semiconductor device Can be improved.

17, FIG. 18 and FIG. 19 are explanatory views showing the manufacturing steps of the semiconductor device of the eighth embodiment.
In addition, the same part as the said Example 1 and Example 5 to Example 7 attaches | subjects the same code | symbol, and abbreviate | omits the description.
A method for manufacturing the semiconductor device of this example will be described below in accordance with the steps indicated by PG in FIGS.

Steps PG1 to PG5 shown in FIGS. 17 and 18 of the present embodiment are the same as steps PE1 to PE5 shown in FIGS.
PG6 (FIG. 18), the resist mask 32 formed in the process PG3 to form the protrusion piece 30 is re-exposed (first exposure) to the resist mask 32 formed in the process PG3, and the re-wiring 10 is formed. Re-expose (second exposure) using a photomask that shields light from the surrounding area except for the part where the barrier metal layer 34 is to be formed, and forms the barrier metal layer 34 by removing the resist mask 32 exposed by development processing. A resist mask 32 is formed so as to expose the base metal layer 9 at a portion to be exposed and cover a region excluding the portion where the rewiring 10 and the surrounding barrier metal layer 34 are to be formed.

The subsequent steps PG7 to PG10 shown in FIG. 18 and FIG.
Through the above steps, the semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into individual pieces are formed is formed, and the semiconductor wafer 1 is cut vertically and horizontally to be divided into individual pieces as in the seventh embodiment. The semiconductor device of this embodiment is manufactured.

  As described above, in this embodiment, in addition to the same effects as those of the embodiment 7, the rewiring and the barrier metal layer can be formed without removing the resist mask for forming the protrusion top by making the resist positive. By reusing it by re-exposure in the forming process, the resist forming process can be reduced to one time, the manufacturing efficiency of the WCSP type semiconductor device can be improved, and the indirect material cost can be reduced. Can be planned.

20 and 21 are explanatory views showing a manufacturing process of the semiconductor device of the ninth embodiment.
In addition, the same part as the said Example 1 and Example 6 attaches | subjects the same code | symbol, and abbreviate | omits the description.
In FIG. 21, reference numeral 35 denotes a second rewiring as a second wiring layer. The rewiring 10 of the first embodiment (in this embodiment, the first rewiring is used for distinction from the second rewiring 35. 10 is a rewiring having an extended portion 36 on the base metal layer 9 that covers the first rewiring 10 and the end face 10a on the electrode forming region 11 side and extends the end face 10a. .

A method for manufacturing the semiconductor device of this example will be described below in accordance with the steps indicated by PH in FIGS.
Steps PH1 and PH2 shown in FIG. 20 of the present embodiment are the same as steps P1 and P2 shown in FIG.
PH3 (FIG. 20), a positive resist is applied on the base metal layer 9 by spin coating, and after drying, a first re-applying from the electrode pad 5 of the base metal layer 9 to the electrode formation region 11 is performed. A portion of the first rewiring 10 is formed by irradiating the resist dried by using a photomask that shields the region except the region where the wiring 10 is to be formed, with ultraviolet rays, and removing the resist mask 32 exposed by the development process. Using the resist mask 32 that exposes the underlying metal layer 9 and covers other regions as a mask, the first rewiring 10 is formed on the underlying metal layer 9 in the same manner as in Step P3 of Example 1.

  PH4 (FIG. 20), the resist mask 32 formed in the process PH3 to form the first rewiring 10 is extended at the end face 10a on the electrode forming region 11 side of the first rewiring 10 so that the extending portion 36 is formed. The region excluding the part to be formed is re-exposed using a light-shielded photomask, the resist mask 32 exposed by the development process is removed to expose the base metal layer 9 in the part where the elongated portion 36 is to be formed, and the first A resist mask 32 is formed so as to cover a region excluding a portion on the wiring 10 and the extended portion 36 on the end face 10a side.

The second rewiring 35 is formed on the first rewiring 10 and on the underlying metal layer 9 exposed at the portion where the elongated portion 36 is to be formed in the same manner as PH5 (FIG. 21) and step P3 of the first embodiment.
The resist mask 32 formed in step PH3 is removed using PH6 (FIG. 21) and a removal solvent, and the base metal layer 9 in the region excluding the second rewiring 35 is removed in the same manner as in step P5 of the first embodiment. .

  PH7 (FIG. 21), in the same manner as in Step P6 of Example 1, using a photomask in which a portion of the electrode forming region 11 is shielded from light by a photosensitive sealing resin applied to the entire front surface side of the semiconductor wafer 1. An ultraviolet ray is applied to remove the non-photosensitive photosensitive sealing resin by a development process to form a photosensitive sealing film 12 having a thickness of about 5 μm, and the electrode forming region 11 including the elongated portion 36 of the photosensitive sealing film 12. An electrode forming hole 13 that penetrates the photosensitive sealing film 12 and reaches the second rewiring 35 is formed.

  PH8 (FIG. 21), flux is applied to the second rewiring 35 exposed at the bottom of each electrode formation hole 13 of the photosensitive sealing film 12 formed on the front surface side of the semiconductor wafer 1 and its end surface 35a. The solder balls are applied and placed in the electrode forming holes 13 by the solder ball mounting jig in the same manner as in Step P7 of Example 1, and the solder balls are melted by heat treatment and exposed to the bottoms of the electrode forming holes 13. The bump electrode 15 that protrudes in a hemispherical shape from the front surface of the photosensitive sealing film 12 is formed by directly joining the second rewiring 35 and the end surface 35a.

Through the above steps, a semiconductor wafer 1 on which a plurality of semiconductor devices before being divided into pieces is formed is formed, and this semiconductor wafer 1 is cut into pieces vertically and horizontally to be divided into pieces. The device is manufactured.
In the semiconductor device of this embodiment formed in this way, a plurality of bump electrodes 15 directly bonded to the second rewiring 35 are arranged on the front surface of the photosensitive sealing film 12 so as to protrude. Since a WCSP type semiconductor device is formed and the front surface of the device is sealed with a thin photosensitive sealing film, a thin semiconductor device can be obtained.

In addition, since the front surface side of the apparatus is sealed with the photosensitive sealing film 12, the electrode forming hole 13 for forming the bump electrode 15 using the photosensitivity of the photosensitive sealing film 12. Can be easily formed.
Furthermore, the electrode forming hole 13 including the extending portion 36 is formed in the photosensitive sealing film 12, and the hemispherical bump electrode 15 is formed so as to cover the end surface 35a of the second rewiring 35 exposed at the bottom thereof. In addition, the bonding between the bump electrode 15 and the second rewiring 35 can be strengthened, and the stress from the outside after being mounted on the mother board or the like is relieved by the second rewiring 35 to thereby improve the connection reliability. Thus, the reliability of the semiconductor device can be improved.

Further, since the second rewiring 35 is stacked on the first rewiring 10 to double the thickness of the rewiring, the WCSP type with high added value has improved electrical characteristics due to the thick rewiring. A semiconductor device can be obtained.
Further, by using the resist as a positive type and re-exposure in the step of forming the second rewiring 35 without removing the resist mask 32 for forming the first rewiring 10, the resist is used. Thus, it is possible to improve the manufacturing efficiency of the WCSP type semiconductor device with high added value and to reduce the indirect material cost.

  As described above, in this embodiment, the second rewiring is stacked on the first rewiring, and penetrates through the electrode formation region of the photosensitive sealing film that covers the front side of the device. By forming an electrode formation hole including an extended portion leading to rewiring, and forming a bump electrode directly so as to cover the second rewiring shape exposed at the bottom and its end face, photosensitive sealing Electrode formation holes for forming bump electrodes can be easily formed by utilizing the photosensitivity of the film, and the front surface side of the apparatus can be covered with a thin photosensitive sealing film. In addition to being able to reduce the thickness of the WCSP type semiconductor device, the thickness of the rewiring can be doubled, and the electrical characteristics of the thick rewiring are improved. A semiconductor device can be obtained.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Semiconductor substrate 3 Circuit formation surface 4 Insulating layer 5 Electrode pad 6 Surface protective film 7 Interlayer insulating film 8 Through hole 9 Base metal layer (1st base metal layer)
10 Rewiring (first rewiring)
10a End face 11 Electrode forming region 12 Photosensitive sealing film 13 Electrode forming hole 15 Bump electrode 17, 32 Resist mask 21, 24 Rewiring protrusion 23 Second underlayer metal layer 26 Interlayer insulating film protrusion 30 Protrusion piece 34 Barrier metal layer 35 Second rewiring 35a End face 36 Extension part

Claims (6)

A semiconductor substrate;
An electrode pad electrically connected to a circuit element formed on the front surface of the semiconductor substrate;
An interlayer insulating film having a through hole reaching the electrode pad;
A base metal layer formed on the interlayer insulating film including the electrode pad and the through hole;
A wiring layer formed on the base metal layer from the electrode pad to the electrode formation region;
In a semiconductor device comprising a photosensitive sealing film for sealing the front surface side of the semiconductor substrate,
An interlayer insulating film protrusion formed by protruding the base metal layer side of the interlayer insulating film so as to protrude the electrode forming region of the wiring layer from the photosensitive sealing film;
A semiconductor device comprising: an electrode formed to cover the protruding portion of the wiring layer protruding from the photosensitive sealing film by the interlayer insulating film protrusion. A semiconductor substrate;
An electrode pad electrically connected to a circuit element formed on the front surface of the semiconductor substrate;
An interlayer insulating film having a through hole reaching the electrode pad;
A base metal layer formed on the interlayer insulating film including the electrode pad and the through hole;
A wiring layer formed on the base metal layer from the electrode pad to the electrode formation region;
In a semiconductor device comprising a photosensitive sealing film for sealing the front surface side of the semiconductor substrate,
A wiring layer protrusion formed in an electrode formation region of the wiring layer so as to protrude from the photosensitive sealing film;
A semiconductor device comprising: an electrode formed to cover a protruding portion of the wiring layer protrusion from the photosensitive sealing film. A semiconductor substrate;
An electrode pad electrically connected to a circuit element formed on the front surface of the semiconductor substrate;
An interlayer insulating film having a through hole reaching the electrode pad;
A first base metal layer formed on the interlayer insulating film including the electrode pad and the through hole;
A wiring layer formed on the first base metal layer from the electrode pad to the electrode formation region;
In a semiconductor device comprising a photosensitive sealing film for sealing the front surface side of the semiconductor substrate,
An opening formed in the photosensitive sealing film and exposing the electrode formation region of the wiring layer;
A second base metal layer formed on the exposed electrode formation region of the wiring layer, the inner peripheral surface of the opening, and the edge of the opening of the opening on the photosensitive sealing film;
A wiring layer protrusion formed on the second base metal layer and having a protrusion protruding from the photosensitive sealing film;
A semiconductor device comprising: an electrode formed to cover the protruding portion of the wiring layer protrusion. In a method for manufacturing a semiconductor device, which is formed by dividing a semiconductor wafer into pieces,
Forming an electrode pad electrically connected to a circuit element formed on the front surface of the semiconductor substrate of the semiconductor wafer;
Forming an interlayer insulating film having a through hole reaching the electrode pad;
Forming an interlayer insulating film protrusion on the interlayer insulating film for projecting the electrode forming region of the wiring layer from the photosensitive sealing film;
Forming a base metal layer on the electrode pad and on the interlayer insulating film including the through hole and the interlayer insulating film protrusion;
Forming a wiring layer on the underlying metal layer from the electrode pad to the electrode formation region including the interlayer insulating film protrusion;
Forming a photosensitive sealing film for sealing the front surface side of the semiconductor substrate excluding the wiring layer projected by the interlayer insulating film projection;
And a step of forming an electrode so as to cover the protruding portion of the wiring layer that protrudes from the photosensitive sealing film. In a method for manufacturing a semiconductor device, which is formed by dividing a semiconductor wafer into pieces,
Forming an electrode pad electrically connected to a circuit element formed on the front surface of the semiconductor substrate of the semiconductor wafer;
Forming an interlayer insulating film having a through hole reaching the electrode pad;
Forming a base metal layer on the interlayer insulating film including the electrode pad and the through hole;
Forming a wiring layer on the underlying metal layer from the electrode pad to the electrode formation region;
Forming a wiring layer protrusion so as to protrude from the photosensitive sealing film in an electrode formation region on the wiring layer;
Forming the photosensitive sealing film that seals the front side of the semiconductor substrate excluding the wiring layer protrusions;
And a step of forming an electrode so as to cover the protruding portion of the wiring layer protrusion from the photosensitive sealing film. In a method for manufacturing a semiconductor device, which is formed by dividing a semiconductor wafer into pieces,
Forming an electrode pad electrically connected to a circuit element formed on the front surface of the semiconductor substrate of the semiconductor wafer;
Forming an interlayer insulating film having a through hole reaching the electrode pad;
Forming a first base metal layer on the interlayer insulating film including the electrode pad and the through hole;
Forming a wiring layer on the first base metal layer from the electrode pad to the electrode formation region;
Sealing the front side of the semiconductor substrate and forming a photosensitive sealing film having an opening exposing the electrode formation region of the wiring layer;
Forming a second base metal layer on the exposed electrode formation region of the wiring layer, the inner peripheral surface of the opening, and the edge of the opening of the opening on the photosensitive sealing film; When,
Forming a wiring layer protrusion having a protrusion protruding from the photosensitive sealing film on the second base metal layer;
Forming an electrode so as to cover the protruding portion of the wiring layer protrusion.

Images