JP2011146683A - 液処理装置、塗布、現像装置、塗布、現像方法、及び記憶媒体 - Google Patents

液処理装置、塗布、現像装置、塗布、現像方法、及び記憶媒体 Download PDF

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Publication number
JP2011146683A
JP2011146683A JP2010237808A JP2010237808A JP2011146683A JP 2011146683 A JP2011146683 A JP 2011146683A JP 2010237808 A JP2010237808 A JP 2010237808A JP 2010237808 A JP2010237808 A JP 2010237808A JP 2011146683 A JP2011146683 A JP 2011146683A
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JP
Japan
Prior art keywords
substrate
liquid
wafer
unit
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010237808A
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English (en)
Japanese (ja)
Inventor
Yasuhiro Sakamoto
泰大 坂本
Akira Yonemizu
昭 米水
Kazuhiko Ito
和彦 伊藤
Yuichiro Kunugimoto
裕一朗 桾本
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Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010237808A priority Critical patent/JP2011146683A/ja
Publication of JP2011146683A publication Critical patent/JP2011146683A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP2010237808A 2009-12-14 2010-10-22 液処理装置、塗布、現像装置、塗布、現像方法、及び記憶媒体 Pending JP2011146683A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010237808A JP2011146683A (ja) 2009-12-14 2010-10-22 液処理装置、塗布、現像装置、塗布、現像方法、及び記憶媒体

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009283122 2009-12-14
JP2009283122 2009-12-14
JP2010237808A JP2011146683A (ja) 2009-12-14 2010-10-22 液処理装置、塗布、現像装置、塗布、現像方法、及び記憶媒体

Publications (1)

Publication Number Publication Date
JP2011146683A true JP2011146683A (ja) 2011-07-28

Family

ID=44401001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010237808A Pending JP2011146683A (ja) 2009-12-14 2010-10-22 液処理装置、塗布、現像装置、塗布、現像方法、及び記憶媒体

Country Status (2)

Country Link
JP (1) JP2011146683A (ko)
KR (1) KR20110068835A (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI593464B (zh) * 2014-09-26 2017-08-01 思可林集團股份有限公司 基板處理裝置及基板處理方法
TWI613010B (zh) * 2014-03-11 2018-02-01 斯克林集團公司 基板處理裝置及基板處理方法
TWI706700B (zh) * 2017-11-15 2020-10-01 日商斯庫林集團股份有限公司 基板處理方法及基板處理裝置
WO2023176176A1 (ja) * 2022-03-18 2023-09-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および監視方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102038140B1 (ko) * 2017-11-24 2019-10-29 아주대학교산학협력단 코팅 물질의 도포 상태 모니터링 장치 및 방법
KR102298086B1 (ko) * 2019-09-24 2021-09-02 세메스 주식회사 가스 공급 유닛 및 방법, 그리고 기판 처리 장치 및 방법
KR102277543B1 (ko) * 2019-09-24 2021-07-15 세메스 주식회사 기판 처리 장치 및 방법
DE102020130415A1 (de) * 2019-12-26 2021-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Versorgungssystem für chemische flüssigkeiten und verfahren zur versorgung mit chemischen flüssigkeiten
KR102585478B1 (ko) * 2021-10-14 2023-10-10 주식회사 램스 딥러닝을 이용한 스핀 코터의 포토레지스트 도포 상태 검사 시스템

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63210748A (ja) * 1987-02-27 1988-09-01 Kyowa Kaimen Kagaku Kk 接触角および界面張力の自動測定方法
JPH09171951A (ja) * 1995-12-20 1997-06-30 Toshiba Corp レジストパターンの形成方法
JPH1041213A (ja) * 1996-07-24 1998-02-13 Matsushita Electric Ind Co Ltd パターン形成方法
JP2001291655A (ja) * 2000-04-07 2001-10-19 Tokyo Electron Ltd 疎水化処理の評価方法、レジストパターンの形成方法及びレジストパターン形成システム
JP2002188986A (ja) * 2000-12-22 2002-07-05 Bridgestone Corp 接触角の測定方法及びその装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63210748A (ja) * 1987-02-27 1988-09-01 Kyowa Kaimen Kagaku Kk 接触角および界面張力の自動測定方法
JPH09171951A (ja) * 1995-12-20 1997-06-30 Toshiba Corp レジストパターンの形成方法
JPH1041213A (ja) * 1996-07-24 1998-02-13 Matsushita Electric Ind Co Ltd パターン形成方法
JP2001291655A (ja) * 2000-04-07 2001-10-19 Tokyo Electron Ltd 疎水化処理の評価方法、レジストパターンの形成方法及びレジストパターン形成システム
JP2002188986A (ja) * 2000-12-22 2002-07-05 Bridgestone Corp 接触角の測定方法及びその装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613010B (zh) * 2014-03-11 2018-02-01 斯克林集團公司 基板處理裝置及基板處理方法
US10665481B2 (en) 2014-03-11 2020-05-26 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method for discharge of processing liquid from nozzle
TWI593464B (zh) * 2014-09-26 2017-08-01 思可林集團股份有限公司 基板處理裝置及基板處理方法
TWI706700B (zh) * 2017-11-15 2020-10-01 日商斯庫林集團股份有限公司 基板處理方法及基板處理裝置
US10910245B2 (en) 2017-11-15 2021-02-02 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
WO2023176176A1 (ja) * 2022-03-18 2023-09-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および監視方法

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Publication number Publication date
KR20110068835A (ko) 2011-06-22

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