JP2011137225A - Plasma cvd film deposition apparatus and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma CVD film deposition apparatus capable of forming a film having uniform and favorable quality and uniform and favorable barrier property on a long substrate, and a film deposition method using the film deposition apparatus. <P>SOLUTION: The plasma CVD film deposition apparatus 10 that continuously deposits the film on the substrate includes: film deposition rollers 20 comprising a first film deposition roller 20A and a second film deposition roller 20B; a vacuum chamber 12 that houses the film deposition rollers and has at least one evacuation aperture 14 that is located between the first and second film deposition rollers and is disposed so that it becomes mirror symmetric to a first symmetric plane and a second symmetry plane or disposed so that it becomes axially symmetric to a cross line 19 of the first and second symmetric planes crossing each other, wherein the first symmetric plane 18A perpendicularly bisects a line segment representing the shortest distance between a rotational axis 20Aa and a rotational axis 20Ba and the second symmetric plane 18B is perpendicular to the first symmetric plane 18A and bisects the total length of the first and second film deposition rollers 20A and 20B; a film deposition gas feeding part 30; and a vacuum pump installed outside the vacuum chamber. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a plasma CVD film forming apparatus and a film forming method using the film forming apparatus.

  When producing an organic electroluminescent element, an organic thin film solar cell, etc. by a roll-to-roll process, the flexible substrate which has a softness | flexibility is used for a support substrate (and / or sealing substrate).

  In addition to transparency, the flexible substrate is required to have a barrier property against water vapor and oxygen (hereinafter sometimes referred to as a barrier property). In order to provide a flexible substrate with a barrier property, it is a common practice to form a transparent inorganic film on a substrate. Examples of the material for the transparent inorganic film include silicon (Si) oxide, nitride, oxynitride, and the like.

  Inorganic film deposition methods include vacuum vapor deposition, sputtering, ion plating, and other physical vapor deposition (PVD), thermal CVD (Chemical Vapor Deposition), photo CVD, Cat-CVD, and plasma. There is a chemical vapor deposition method (CVD method) such as a CVD (Plasma Enhanced-Chemical Vapor Deposition) method.

  A vacuum deposition method, which is a physical vapor deposition method, is a highly productive film formation method because of a high film formation speed. Therefore, it is widely applied mainly as a film forming method for food packaging films. However, since the film formed by the vacuum deposition method is insufficient in both the water vapor transmission rate and the oxygen transmission rate in the barrier property, it is difficult to apply to a method for manufacturing a flexible substrate for an electronic device such as an organic electroluminescence element. It is.

  In addition, the sputtering method has a low productivity because the film formation rate is low as compared with the vacuum deposition method. Since the film formed by the physical vapor deposition method (PVD method) is fragile, when the film thickness is increased, cracks and peeling from the substrate are likely to occur. In a film forming method such as a roll-to-roll process in which flexibility is required even for the formed film, the formed film may not follow the deformation of the base material, and may be cracked or peeled off.

On the other hand, the plasma CVD method, which is a chemical vapor deposition method, is a film forming method having a high film forming speed and high productivity.
A film formed by the plasma CVD method is excellent in flexibility and can have an arbitrary film thickness of about several hundred nm to several μm.
Furthermore, since the film formed by the plasma CVD method is rich in flexibility and can follow the deformation of the base material, cracks and peeling from the base material do not occur, and the barrier property does not deteriorate. Therefore, it can be said that the plasma CVD method is a film forming method suitable for a roll-to-roll process including a process in which a film having a curvature such as a film forming roll and a transport roll is wound and unwound. For this reason, the plasma CVD method is expected as a new film forming method.

  There are various types of plasma CVD methods, such as a parallel plate type for discharging between the substrate and the counter electrode, and a type for discharging between the roll and the counter electrode, and various shapes of electrodes (counter electrode) are used. However, the deposition of film material on the electrodes is a problem. The raw material gas introduced between the base material (film) on the roll and the counter electrode deposits an approximately equal amount of thin film on both the base material and the counter electrode, so that it is continuously applied on the long base material. When a film is formed, a considerable amount of deposit is deposited thickly on the counter electrode.

  This deposit affects the discharge impedance between the roll and the counter electrode, causing fluctuations in the film formation conditions, or the deposit peels off to form flaky dust, and at the time of peeling further than the flaky dust Fine fragments may become particles that float in the chamber, and the suspended particles may reach the substrate and the film to be deposited, creating defects in the deposited film or impairing barrier properties. There is.

  As a measure for suppressing deposition of film material on the counter electrode and suppressing fluctuations in film forming conditions, for example, a configuration in which an electrode protected by a gas flow is arranged separately from the counter electrode is known.

As another method for solving the problem of deposition of the film material on the counter electrode, a film forming roll is provided by generating discharge plasma between two facing film forming rolls that transport the film and supplying a film forming material gas. There is a method of forming a film on a substrate wound around (see Patent Documents 1 and 2).
In this method, since the base material is disposed on both sides of the discharge plasma generation region, the film material decomposed in the discharge plasma generation region can be efficiently used for film formation, and the deposition of the film material is mainly performed in the discharge plasma generation region. Since it is performed only on the base material on both sides and the base material is always wound around the film forming roll corresponding to the counter electrode during the film forming process, the film material does not accumulate on the electrode and is stable for a long time. Film formation becomes possible.

  Here, with reference to FIG. 6, the structural example of the plasma CVD film-forming apparatus concerning the said prior art is demonstrated. FIG. 6 is a schematic plan view seen from above showing a conventional plasma CVD film forming apparatus transparently so that the internal configuration can be understood.

  As shown in FIG. 6, the plasma CVD film forming apparatus 110 includes an operation mechanism accumulation unit 111 and a vacuum chamber 112. The operating mechanism 111 is provided in connection with the vacuum chamber 112. The vacuum chamber 112 has a container-like configuration in which the internal space can be decompressed. In this example, the vacuum chamber 112 has a rectangular parallelepiped shape.

  In the vacuum chamber 112, the first film forming roll 120A, the second film forming roll 120B disposed opposite to the first film forming roll 120A, and the gap between the first film forming roll 120A and the second film forming roll 120B. A film forming gas supply unit 130 disposed in the upper part is stored.

  A vacuum exhaust port 114 is provided in the vacuum chamber 112. In many cases, the vacuum exhaust port 114 is provided in a wall portion that normally separates the operating mechanism accumulating portion 111 and the vacuum chamber 112. In this example, the bottom portion (in the vicinity of the wall portion that separates the operating mechanism accumulating portion 111 and the vacuum chamber 112 ( An example provided on the bottom surface is shown.

  The operating mechanism stacking unit 111 includes a first film forming roll operating mechanism 122A for operating the first film forming roll 120A, a second film forming roll operating mechanism 122B for operating the second film forming roll 120B, and a vacuum exhaust port 114. A vacuum pump 140 connected by a pipe or the like that is not connected is provided.

  From the viewpoint of mainly observing the film formation process visually, the operation mechanism stacking unit 111 has integrated operation mechanisms such as the first film formation roll operation mechanism 122A, the second film formation roll operation mechanism 122B, and the vacuum pump 140. . Therefore, the vacuum exhaust port 114 is provided in the vicinity of the vacuum pump 140 such as a wall portion that separates the operation mechanism accumulating portion 111 and the vacuum chamber 112, a bottom portion near the wall portion, or an upper portion.

Japanese Patent No. 2587507 Japanese Patent No. 4268195

  However, in the film forming method using the roll-to-roll process according to the above-mentioned patent document, pressure distribution is likely to occur in the vacuum chamber, and the width direction (TD (traverse direction) direction) of a long base material (flexible substrate to be formed) The film quality becomes non-uniform when viewed in (1), and as a result, the barrier property against water vapor and oxygen becomes non-uniform when viewed in the TD direction, and there is a region where the barrier property is partially insufficient. It has become clear from the knowledge of the present inventors that there is a problem of being able to do this.

  Specifically, as described above, the vacuum exhaust port is unevenly distributed in the vicinity of the vacuum pump such as the wall portion or the vicinity of the wall portion that separates the operating mechanism accumulating portion and the vacuum chamber, so that pressure distribution is generated in the vacuum chamber. It became clear that the film quality was uneven when viewed in the TD direction.

  The present invention has been made in view of such a problem, and can provide a plasma CVD film-forming apparatus capable of uniformly and satisfactorily improving the film quality of a film formed on a long base material, and thus having a uniform and good barrier property. It is an object of the present invention to provide a film forming method using this film forming apparatus.

  As a result of diligent research on the plasma CVD method, the inventors of the present invention have solved the above problem by setting the vacuum exhaust port to which the vacuum pump is connected in the vacuum chamber of the plasma CVD film forming apparatus. The inventors have found that this can be solved, and have completed the present invention.

That is, according to the present invention,
[1] In a plasma CVD film forming apparatus for continuously forming a film on a base material while continuously conveying a long base material, the first film forming roll and the first film forming roll are parallel to each other. A film forming roll that is wound around and conveyed by the substrate, and is positioned between the first film forming roll and the second film forming roll. A line segment connecting the rotation axis of the film roll and the rotation axis of the second film forming roll at the shortest distance is divided into two equal parts, and a first symmetry plane perpendicular to the line segment, the first film forming roll and the A second symmetry plane that bisects the entire length of the second film forming roll and is orthogonal to the first symmetry plane is set, and is mirror-symmetric with respect to the first symmetry plane and the second symmetry plane. Or a pair of axes with respect to an intersecting line defined by intersecting the first symmetry plane and the second symmetry plane. Between the first film forming roll and the second film forming roll, the vacuum chamber having one or two or more vacuum exhaust ports arranged so as to be stored and storing the film forming roll A plasma CVD film forming apparatus, comprising: a film forming gas supply unit for supplying a film forming gas; and a vacuum pump connected to the vacuum exhaust port and provided outside the vacuum chamber.
[2] The vacuum chamber has one or more vacuum exhaust ports arranged to be mirror-symmetric with respect to the first symmetry plane and the second symmetry plane. ] The plasma CVD film-forming apparatus of description.
[3] When the number of the vacuum exhaust ports is three or more and the number of the vacuum exhaust ports is an odd number, at least one is located on a straight line in which the first symmetry plane and the second symmetry plane are orthogonal to each other, and The plasma CVD film-forming apparatus according to [1] or [2], wherein the planar shape and the area of the vacuum exhaust port divided by the first symmetry plane and the second symmetry plane are equal.
[4] One or two or more valves provided between the vacuum exhaust port and the vacuum pump and having the same number as the number of the vacuum exhaust ports, the first symmetry plane, and the second symmetry The plasma according to any one of [1] to [3], further comprising sensors having the same number as the number of the vacuum exhaust ports paired with each of the vacuum exhaust ports in a mirror-symmetrical position with respect to a plane. CVD film deposition system.
[5] The plasma CVD film forming apparatus according to [4], wherein the sensor is provided at a position facing the paired vacuum exhaust ports.
[6] The plasma CVD film forming apparatus according to [4], wherein the sensor is provided in the vicinity of the paired vacuum exhaust ports.
[7] The plasma CVD film forming apparatus according to [4], wherein the sensor is provided integrally with the valve provided between a pair of vacuum exhaust ports and a vacuum pump.
[8] Connected to the sensor so that a fluctuation range from a measured value or a set value measured by the sensor can be input, and connected to the valve so that the opening / closing operation of the valve can be controlled. The plasma CVD film forming apparatus according to any one of [4] to [7], further including an automatic control unit provided.
[9] The plasma CVD film forming apparatus according to any one of [4] to [8], wherein the sensor is a pressure sensor.
[10] A film forming method including a step of forming a film on a substrate using the plasma CVD film forming apparatus according to any one of [1] to [9].
[11] In the film forming method, including the step of forming a film on the substrate using the plasma CVD film forming apparatus according to any one of [4] to [7], the sensor measures the measured value. The valve is controlled so that the measured value and the installation value are equal by controlling the opening / closing operation of the valve based on the obtaining step and the measured value obtained by the sensor and the preset set value. The film-forming method as described in [10] including the process of opening / closing.
[12] In the film forming method including the step of forming a film on the substrate using the plasma CVD film forming apparatus according to [8], the sensor acquires a measured value;
The sensor inputs the acquired measurement value to the automatic control unit;
The automatic control unit controls the opening / closing operation of the valve based on the input measurement value and a preset setting value so that the valve is adjusted so that the measurement value and the installation value are equal. The film forming method according to [10], including a step of opening and closing.
[13] The film forming method according to any one of [10] to [12], wherein the sensor is a pressure sensor, and the measured value and the set value are pressure values.
[14] A method for manufacturing a flexible substrate, comprising a step of forming a film on the base material by the film forming method according to any one of [10] to [13].
Is provided.

  According to the plasma CVD film forming apparatus and the plasma CVD film forming method of the present invention, it is possible to generate a stable plasma discharge that is excellent in symmetry with respect to the TD direction. Can be made uniform. Therefore, it is possible to suppress the occurrence of thin film defects caused by the non-uniformity of the film formation conditions and the non-uniformity of the film formation conditions, so that the film quality of the film to be formed can be made uniform and favorable especially in the TD direction. As a result, the barrier property can be made uniform and good.

FIG. 1-1 is a schematic plan view of the plasma CVD film forming apparatus according to the first embodiment as viewed from above. FIG. 1-2 is a schematic plan view of the plasma CVD film forming apparatus of the first embodiment viewed from the front. FIG. 1C is a schematic plan view of the plasma CVD film forming apparatus according to the first embodiment viewed from the side. FIG. 2A is a schematic plan view of the plasma CVD film forming apparatus of the second embodiment as viewed from above. FIG. 2-2 is a schematic plan view of the plasma CVD film forming apparatus of the second embodiment as viewed from the front. FIG. 2-3 is a schematic plan view of the plasma CVD film forming apparatus according to the second embodiment viewed from the side. FIG. 3A is a schematic plan view of the plasma CVD film forming apparatus of the third embodiment as viewed from above. FIG. 3-2 is a schematic plan view of the plasma CVD film forming apparatus of the third embodiment viewed from the front. FIG. 3C is a schematic plan view of the plasma CVD film forming apparatus of the third embodiment viewed from the side. FIG. 4A is a schematic plan view of the plasma CVD film forming apparatus of the fourth embodiment as viewed from the side. FIG. 4B is a schematic block diagram illustrating the configuration of the automatic control unit according to the fourth embodiment. FIG. 5 is a schematic flowchart for explaining the operation of the plasma CVD film forming apparatus of the fourth embodiment. FIG. 6 is a schematic plan view of a conventional plasma CVD film forming apparatus as seen from above.

  Hereinafter, the present invention will be described in detail. In the following description, the drawings may be described with reference to the drawings. However, the drawings only schematically show the shape, size, and arrangement of the components to the extent that the invention can be understood. The invention is not particularly limited. Moreover, in each figure, about the same component, it attaches | subjects and shows the same code | symbol, The duplicate description may be abbreviate | omitted.

  The plasma CVD film forming apparatus of the present invention is a plasma CVD film forming apparatus for continuously forming a film on a base material while continuously transporting a long base material. A film-forming roll including a first film-forming roll and a second film-forming roll disposed in parallel to the first film-forming roll, and the first film-forming roll and the second film-forming roll. And a first symmetric plane that bisects a line segment connecting the rotation axis of the first film-forming roll and the rotation axis of the second film-forming roll at the shortest distance and that is orthogonal to the line segment, and the first film-forming process. A second symmetry plane that bisects the entire length of the roll and the second film forming roll and that is orthogonal to the first symmetry plane is set, and is mirror-symmetric with respect to the first symmetry plane and the second symmetry plane. Or is symmetrical with respect to an intersecting line defined by intersecting the first symmetry plane and the second symmetry plane. The vacuum chamber has one or more vacuum exhaust ports arranged in this manner, and is disposed opposite to the vacuum exhaust port in the vacuum chamber in which the film forming roll is stored, A film forming gas supply unit for supplying a film forming gas between the film forming roll and the second film forming roll, and a vacuum pump connected to the vacuum exhaust port and provided outside the vacuum chamber.

  The plasma CVD apparatus according to the present invention applies a pulse voltage with alternating current or polarity reversal to the first film-forming roll and / or the second film-forming roll arranged opposite to each other under a reduced pressure, and the first is opposed to each other. Glow discharge is generated in a discharge plasma generation region (film formation zone) that is a gap between the film formation roll and the second film formation roll and covers at least the entire length of the first film formation roll and the second film formation roll. In the long base material wound around the film roll, the film is continuously formed on a partial region exposed to the film formation zone.

  For example, assuming that a substrate used in an electronic device such as an organic electroluminescence element or an organic thin film solar cell is used as a long base material, it can be wound into a roll such as a film or sheet made of a colorless and transparent resin. If it is an insulating material, it will not specifically limit. Examples of the resin used for such a substrate include polyethersulfone (PES); polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN); polyethylene (PE), polypropylene (PP), and cyclic polyolefin. Polyolefin resins such as polyamide resins, polycarbonate resins, polystyrene resins, polyvinyl alcohol resins, saponified ethylene-vinyl acetate copolymers, polyacrylonitrile resins, acetal resins, polyimide resins, epoxy resins Can be mentioned.

  Among these resins, polyester resins and polyolefin resins are preferred because of their high heat resistance, low linear expansion coefficient, and low production costs, and polyethylene terephthalate and polyethylene naphthalate are particularly preferred. Moreover, these resins may be used alone or in combination of two or more.

  The thickness of the substrate is not particularly limited, but can be set as appropriate in consideration of stability during film formation. The thickness of the substrate is preferably in the range of 5 μm to 500 μm from the viewpoint that the substrate can be conveyed even in a vacuum. Furthermore, the range of 50 μm to 200 μm is more preferable, and the range of 50 μm to 100 μm is particularly preferable.

(First embodiment)
With reference to FIG. 1-1, FIG. 1-2, and FIG. 1-3, the plasma CVD film-forming apparatus concerning the 1st Embodiment of this invention and the film-forming method using this plasma CVD film-forming apparatus are demonstrated.
FIG. 1-1 is a schematic plan view transparently showing an internal configuration when a plasma CVD film forming apparatus is viewed from above. In the following description, the direction of the white arrow A in FIG. 1-1 will be described as the front direction, and the direction of the white arrow B will be described as the side surface direction. FIG. 1-2 is a schematic plan view transparently showing an internal configuration when the plasma CVD film forming apparatus is viewed from the front. FIG. 1-3 is a schematic plan view transparently showing the internal configuration of the plasma CVD film forming apparatus as viewed from the side. Various types such as a film forming roll operating mechanism provided outside the vacuum chamber as described with reference to FIG. 6, connected to the film forming roll to operate the film forming roll, and piping connected to the gas supply unit. Since the pipes and the like are not the gist of the present invention, illustration and explanation thereof are omitted.

<Plasma CVD film deposition system>
As shown in FIGS. 1-1, 1-2, and 1-3, the plasma CVD film-forming apparatus 10 of the first embodiment includes a film-forming roll 20 that can wind and convey the above-described base material. Yes. The film forming roll 20 includes a first film forming roll 20A and a second film forming roll 20B (see FIG. 1-1).

  Each of the first film forming roll 20A and the second film forming roll 20B has a cylindrical shape, and the overall length and the diameter are both equal. The core portion passing through the center of the diameter of each of the columnar first film forming roll 20A and the second film forming roll 20B is a rotating shaft, and the first film forming roll 20A has a rotating shaft 20Aa. 2 The film forming roll 20B has a rotation shaft 20Ba. The second film forming roll 20B is disposed to face the first film forming roll 20A in parallel. The total length of the film forming roll 20 is the length from one end to the other end in the extending direction of the cylindrical core.

  Specifically, the first film-forming roll 20A and the second film-forming roll 20B are arranged such that both ends of the first film-forming roll 20A and the second film-forming roll 20B are aligned with the surfaces orthogonal to the rotation axes 20Aa and 20Ba. Opposed in parallel.

  The plasma CVD film forming apparatus 10 includes other rolls such as an unwinding roll and a take-up roll in addition to the film forming roll 20, but these other rolls other than the film forming roll 20 are not the gist of the present invention and are illustrated in the figure. Detailed description thereof will be omitted.

  A discharge plasma generating member (not shown) is stored in the first film forming roll 20A and the second film forming roll 20B. The discharge plasma generating member is a member capable of generating glow discharge (discharge plasma) in the film forming process in the film forming zone 22 which is a gap between the first film forming roll 20A and the second film forming roll 20B facing the first film forming roll 20A. is there.

  The plasma CVD film forming apparatus 10 includes an airtight vacuum chamber 12 that can exhaust the internal gas and reduce the pressure. The film forming roll 20 described above is stored in the vacuum chamber 12. In the vacuum chamber 12, a first symmetry plane 18A and a second symmetry plane 18B are set with reference to the arrangement positions of the first film formation roll 20A and the second film formation roll 20B.

  The first symmetry plane 18A is set between the first film forming roll 20A and the second film forming roll 20B, and the rotation axis 20Aa of the first film forming roll 20A and the rotation axis 20Ba of the second film forming roll 20B are set. A line segment connected by the shortest distance is divided into two equal parts and set as a plane orthogonal to the line segment.

The second symmetry plane 18B is set as a plane that bisects the entire length of the first film formation roll 20A and the second film formation roll 20B and that is orthogonal to the first symmetry plane 18A.
A straight line defined by intersecting the first symmetry plane 18A and the second symmetry plane 18B is defined as an intersection line 19.

The vacuum chamber 12 includes one vacuum exhaust port 14 in the first embodiment.
The plasma CVD film forming apparatus 10 of the present invention is characterized by the position of the vacuum exhaust port 14 provided in the vacuum chamber 12. Specifically, the vacuum chamber 12 includes one or more vacuum exhaust ports 14, and the vacuum exhaust ports 14 are mirror-symmetric with respect to the first symmetry plane 18A and the second symmetry plane 18B. Or arranged so as to be axially symmetric with respect to an intersecting line 19 defined by intersecting the first symmetry plane and the second symmetry plane.

  One vacuum exhaust port 14 of the first embodiment is located on a straight line formed by orthogonally intersecting the first symmetry plane 18A and the second symmetry plane 18B, and the first symmetry plane 18A and the second symmetry plane 18A. In the first region 21a, the second region 21b, the third region 21c, and the fourth region 21d divided by the surface 18B, the planar shape and the area of the vacuum exhaust port 14 are provided to be substantially equal.

  The vacuum exhaust port 14 is “arranged so as to be mirror-symmetrical or axially symmetric with respect to an intersecting line 19 defined by intersecting the first and second symmetry planes. When the number of vacuum exhaust ports 14 provided in the vacuum chamber 12 is an odd number of three or more, at least one of the first and second symmetry surfaces 18A and 18B intersects (orthogonally) and is defined. The plane shape of the vacuum exhaust port 14 located on the intersecting line 19 that is a straight line formed and divided by the first symmetry surface 18A and the second symmetry surface 18B and the area thereof are provided to be substantially equal. The remaining even number is arranged so as to be symmetric with respect to the first symmetric surface 18A and the second symmetric surface 18B, or the first symmetric surface 18A and the second symmetric surface 18B are defined to intersect. It is arranged so as to be axially symmetric with respect to the intersection line 19 Taste.

  In the first embodiment and the following embodiments, for convenience of explanation, the vacuum exhaust port 14 will be described as a configuration example provided at the bottom (bottom surface) of the vacuum chamber 12, but the arrangement position of the vacuum exhaust port 14 is described here. It is not limited to the above, and the first symmetric surface 18A and the second symmetric surface 18B are mirror-symmetrical, or the first symmetric surface 18A and the second symmetric surface 18B intersect with each other. It can be provided on the side wall (side surface), the ceiling (upper surface), etc. on the condition that it is arranged so as to be axially symmetric with respect to the line 19.

  In the following embodiment, an example in which the arrangement of the vacuum exhaust port 14 (and the sensor 50) is mirror-symmetric with respect to the first symmetry plane 18A and the second symmetry plane 18B will be described, but the present invention is not limited to this. The arrangement of the vacuum exhaust port 14 (and the sensor 50) may be axially symmetric with respect to the intersecting line 19.

  As a specific configuration example of the vacuum exhaust port 14 arranged so as to be axially symmetric with respect to the intersecting line 19, it is disposed on a straight line passing through the intersecting line 19 with the intersecting line 19 interposed therebetween, and One (the same number) is arranged in each of the first region 21a and the fourth region 21d so that the distances from the line 19 are equal to each other, the second region 21b and the second region 21 across the intersecting line 19 1 each in the three regions 21c (the same number), one each in the first region 21a, the second region 21b, the third region 21c, and the fourth region 21d (the same number) ) The arrangement is arranged.

The CVD film forming apparatus 10 includes a film forming gas supply unit 30. In this example, the film forming gas supply unit 30 has a tubular shape extending in the same direction as the extending direction of the rotation shafts 20Aa and 20Ba of the film forming roll 20. The film forming gas supply unit 30 is provided to face the film forming zone 22. The film forming gas supply unit 30 is preferably disposed to face the vacuum exhaust port 14. In the first embodiment, the film forming gas is provided between the first film forming roll 20 </ b> A and the second film forming roll 20 </ b> B in the vacuum chamber 12. Opposed to the vacuum exhaust port 14 with the zone 22 in between.
The film forming gas supply unit 30 is provided with a plurality of gas ejection nozzles directed to the film forming zone 22 so as to be arranged in the extending direction. The film forming gas supply unit 30 has a function of supplying a film forming gas uniformly in the film forming zone 22 particularly in the TD direction.

  Examples of the film forming gas supplied by the film forming gas supply unit 30 include conventionally known arbitrary suitable source gas, reaction gas, and discharge gas. However, the reaction gas and the discharge gas may be used as a single type of gas. possible.

  The plasma CVD film forming apparatus 10 includes a vacuum pump 40. The vacuum pump 40 is provided outside the vacuum chamber 12, and is connected to the vacuum exhaust port 14 via a pipe or the like. The vacuum pump 40 has a function of adjusting the pressure by discharging the gas in the vacuum chamber 12.

  The film forming gas supply unit 30 and the vacuum pump 40 may have any conventionally known and suitable configuration that is available on the market, for example.

  By disposing the vacuum exhaust port 14 as described above, the pressure in the vacuum chamber 12, the concentration of the supplied film forming gas, the generation of discharge plasma, particularly the TD direction (the extending direction of the rotating shaft of the film forming roll 20). ) Can be made uniform. Therefore, it is possible to suppress the occurrence of thin film defects caused by the non-uniformity of the film formation conditions and the non-uniformity of the film formation conditions, so that the film quality of the film to be formed can be made uniform and favorable especially in the TD direction. As a result, the barrier property can be made uniform and good.

<Film formation method>
The plasma CVD film forming method includes a step of preparing a plasma CVD film forming apparatus and a step of forming a film on a substrate using the plasma CVD film forming apparatus.
Specifically, a plasma CVD film forming apparatus 10 having the configuration already described with reference to FIGS. 1-1, 1-2, and 1-3 is prepared.
Next, the above-mentioned long base material unwound from an unillustrated unwinding roll can be conveyed to the first film forming roll 20A and the second film forming roll 20B provided in the vacuum chamber 12, and Wind it so that it can be wound on a winding roll.

  In this step, the long base material unwound from one unwinding roll is used as both the first film forming roll 20A and the second film forming roll 20B, and the film forming zone 22 is set twice. You may wind so that it may pass, prepare two unwinding rolls, and unwind from two different unwinding rolls to the 1st film-forming roll 20A and the 2nd film-forming roll 20B. May be wound respectively.

  The long base material is preferably subjected to surface activation treatment in accordance with a conventional method for cleaning the base material surface in advance from the viewpoint of improving the adhesion with the film to be formed. Examples of such surface activation treatment include corona treatment, plasma treatment, and flame treatment.

  Next, the deposition gas is supplied from the deposition gas supply unit 30 to the deposition zone 22 and the vacuum pump 40 is operated. Further, the discharge plasma generating member is operated by adjusting the pressure (degree of vacuum) in the vacuum chamber 12. Further, the long base material is unwound from the unwinding roll, and the long base material is taken up on the take-up roll. The first film forming roll 20A and the second film forming roll 20B located in the middle of the path from the unwinding roll to the winding roll convey a long base material. In this way, a desired film is continuously formed on a partial region of the long base material transported by the first film forming roll 20A and the second film forming roll 20B and traveling in the film forming zone 22.

  In the plasma CVD film forming apparatus 10 of the first embodiment, as described above, one vacuum exhaust port 14 is defined by the first symmetry plane 18A and the second symmetry plane 18B intersecting (orthogonal). The first region 21a, the second region 21b, the third region 21c, and the fourth region 21d are located on the intersecting line 19 that is a straight line and divided by the first symmetry surface 18A and the second symmetry surface 18B. The planar shape of the mouth 14 and the area thereof are substantially equal, that is, mirror-symmetric with respect to the first symmetry surface 18A and the second symmetry surface 18B, or the first symmetry surface 18A and the second symmetry surface 18B. Are provided so as to be axially symmetric with respect to the intersecting line 19 defined by intersecting. Further, since the vacuum exhaust port 14 is opposed to the film forming gas supply unit 30 with the film forming zone 22 in between, the film forming gas can be supplied uniformly in the film forming zone 22 particularly in the TD direction. Therefore, it is possible to suppress the occurrence of thin film defects caused by the non-uniformity of the film formation conditions and the non-uniformity of the film formation conditions, so that the film quality of the film to be formed can be made uniform and favorable especially in the TD direction. As a result, the barrier property can be made uniform and good.

  The source gas that is a component of the film forming gas supplied from the film forming gas supply unit 30 can be appropriately selected and used according to the material of the film to be formed. As a component of the source gas, for example, when the film contains silicon such as silicon oxide, an organosilicon compound containing silicon can be used.

  Examples of such organosilicon compounds include hexamethyldisiloxane, 1.1.3.3-tetramethyldisiloxane, vinyltrimethylsilane, methyltrimethylsilane, hexamethyldisilane, methylsilane, dimethylsilane, trimethylsilane, diethyl Examples thereof include silane, propylsilane, phenylsilane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane, tetraethoxysilane, phenyltrimethoxysilane, methyltriethoxysilane, and octamethylcyclotetrasiloxane. Among these organosilicon compounds, hexamethyldisiloxane and 1.1.3.3-tetramethyldisiloxane are preferable from the viewpoints of handling properties and gas barrier properties of the film to be formed. Moreover, these organosilicon compounds may be used individually by 1 type, and may be used in combination of 2 or more type.

  When the material of the film to be formed is an inorganic compound such as an oxide, nitride, or sulfide, a reaction gas may be mixed in addition to the source gas. As such a reactive gas, a gas that reacts with the raw material gas to become an inorganic compound such as an oxide or a nitride can be appropriately selected and used.

  As a reactive gas for forming an oxide film, for example, oxygen or ozone can be used. Further, as a reaction gas for forming a nitride film, for example, nitrogen or ammonia can be used. These reaction gas may be used individually by 1 type, and may be used in combination of 2 or more type. For example, when an oxynitride film is formed, a reaction gas for forming an oxide and a reaction gas for forming a nitride may be used in combination.

  The film forming gas may be mixed with a carrier gas as necessary in order to supply the source gas into the vacuum chamber. The film forming gas may be further mixed with a discharge gas as required in order to efficiently generate plasma discharge. As such a carrier gas and a discharge gas, any suitable conventionally known gas can be used. For example, a rare gas such as helium, argon, neon, or xenon, or hydrogen can be used.

  The pressure in the vacuum chamber 12 can be adjusted to any suitable pressure in consideration of the type of source gas, etc., but is preferably in the range of 0.1 Pa to 10 Pa, and in the range of 0.1 Pa to 5 Pa. More preferably, it is more preferable to set it in the range of 0.1 Pa to 2.5 Pa.

  When the pressure in the vacuum chamber 12 is less than about 0.1 Pa, it becomes difficult to generate a discharge in a region where a magnetic field exists, and when the pressure exceeds about 10 Pa, plasma discharge in a region other than the magnetic field region (film formation zone) is difficult. Occurrence becomes remarkable, and there is a possibility that the film is formed not only on the base material wound around the film forming roll but also on other parts. When the pressure is 5 Pa or less, the generation of particles due to the reaction of the raw material gas in the film formation zone 22 can be effectively suppressed, and the deterioration of the barrier property of the film due to the deposition of particles can be effectively prevented. Furthermore, if the pressure is 2.5 Pa or less, the generation of particles can be further suppressed.

  The electric power supplied to the discharge plasma generating member can be appropriately adjusted according to the type of source gas, the pressure in the vacuum chamber, etc., but is preferably in the range of 0.1 kW to 10 kW.

  The conveying speed (line speed) of the long base material can be set to any suitable speed in consideration of the type of source gas, the pressure in the vacuum chamber, and the like. The line speed is preferably in the range of 0.25 m / min to 100 m / min, and more preferably in the range of 0.5 m / min to 20 m / min.

  When the line speed is less than 0.25 m / min, there is a tendency that wrinkles are likely to occur on a long base material due to heat caused by plasma discharge. On the other hand, if the line speed exceeds 20 m / min, the thickness of the formed film tends to be thin, and a desired film thickness may not be obtained.

(Second Embodiment)
With reference to FIGS. 2-1, 2-2, and 2-3, a plasma CVD film forming apparatus and a film forming method using the plasma CVD film forming apparatus of the second embodiment of the present invention will be described. Except for the arrangement relationship of the vacuum exhaust ports, there is no difference from the first embodiment described above, and therefore, the same reference numerals may be attached and detailed description thereof may be omitted.

  FIG. 2-1 is a schematic plan view transparently showing the internal configuration of the plasma CVD film forming apparatus of the second embodiment as viewed from above. FIG. 2B is a schematic plan view transparently showing the internal configuration of the plasma CVD film forming apparatus according to the second embodiment as viewed from the front. FIG. 2-3 is a schematic plan view transparently showing the internal configuration of the plasma CVD film forming apparatus of the second embodiment as viewed from the side.

  The plasma CVD film forming apparatus of the second embodiment is characterized in that it includes a plurality of vacuum exhaust ports. The vacuum exhaust port includes two of a first vacuum exhaust port and a second vacuum exhaust port.

<Plasma CVD film deposition system>
As shown in FIGS. 2-1, 2-2, and 2-3, the plasma CVD film forming apparatus 10 according to the second embodiment includes a film forming roll 20 that can wind and convey the above-described base material. Yes. The film forming roll 20 includes a first film forming roll 20A and a second film forming roll 20B (see FIG. 2-1).

  The plasma CVD film forming apparatus 10 includes an airtight vacuum chamber 12 that can exhaust the internal gas and reduce the pressure. The film forming roll 20 described above is stored in the vacuum chamber 12. As in the first embodiment, the first symmetric surface 18A and the second symmetric surface 18B are set in the vacuum chamber 12 with reference to the arrangement positions of the first film forming roll 20A and the second film forming roll 20B. Has been.

  The vacuum chamber 12 includes two vacuum exhaust ports 14 (a first vacuum exhaust port 14A and a second vacuum exhaust port 14B) in the second embodiment.

The first vacuum exhaust port 14A and the second vacuum exhaust port 14B are arranged to be mirror-symmetric with respect to the first symmetry surface 18A and the second symmetry surface 18B.
The first vacuum exhaust port 14A and the second vacuum exhaust port 14B are configured so that the planar shape and area of the vacuum exhaust port 14 divided by the first symmetry plane 18A are substantially equal (as a result, the first vacuum exhaust port 14A and the second vacuum exhaust port 14B are mirror-symmetrical with respect to the first symmetry plane 18A.) And are spaced apart from each other so as to be mirror-symmetrical with respect to the second symmetry plane 18B. ing.

  The plasma CVD film forming apparatus 10 includes a film forming gas supply unit 30. In this example, the film forming gas supply unit 30 has a tubular shape extending in the same direction as the extending direction of the rotation shafts 20 </ b> Aa and 20 </ b> Ba of the film forming roll 20, and the first film forming in the vacuum chamber 12. It is disposed opposite to the vacuum exhaust port 14 with a film formation zone 22 between the roll 20A and the second film formation roll 20B interposed therebetween. The film forming gas supply unit 30 is provided with a plurality of gas ejection nozzles directed to the film forming zone 22 so as to be arranged in the extending direction.

  The plasma CVD film forming apparatus 10 includes a vacuum pump 40. In the configuration example of the second embodiment, the first vacuum pump 40A is connected to the first vacuum exhaust port 14A via a pipe or the like, and the second vacuum pump 40B is connected to the second vacuum exhaust port 14B. Etc. are connected through. Both the first vacuum pump 40 </ b> A and the second vacuum pump 40 </ b> B are provided outside the vacuum chamber 12.

  In this example, the configuration in which different vacuum pumps are connected to the first vacuum exhaust port 14A and the second vacuum exhaust port 14B has been described. For example, the first vacuum exhaust port 14A and the second vacuum exhaust port 14B are connected to each. Alternatively, the two pipes can be integrated into one pipe and connected to one vacuum pump.

  By disposing the first vacuum exhaust port 14A and the second vacuum exhaust port 14B as described above, the pressure in the vacuum chamber 12, the concentration of the supplied film forming gas, the generation of discharge plasma, particularly in the TD direction (film forming) The film forming conditions in the extending direction of the rotation axis of the roll 20 can be made more uniform. Therefore, it is possible to suppress the occurrence of thin film defects caused by the non-uniformity of the film formation conditions and the non-uniformity of the film formation conditions, so that the film quality of the film to be formed can be made uniform and favorable especially in the TD direction. As a result, the barrier property can be made uniform and good.

<Film formation method>
In carrying out the plasma CVD film forming method of the second embodiment, a plasma CVD film forming apparatus 10 having the configuration described with reference to FIGS. 2-1, 2-2, and 2-3 is prepared.

  Next, the above-mentioned long base material unwound from an unillustrated unwinding roll can be conveyed to the first film forming roll 20A and the second film forming roll 20B provided in the vacuum chamber 12, and Wind it so that it can be wound on a winding roll.

  Next, a film forming gas is supplied from the film forming gas supply unit 30 to the film forming zone 22, and the first vacuum pump 40A and the second vacuum pump 40B are operated. Further, the discharge plasma generating member is operated by adjusting the pressure (degree of vacuum) in the vacuum chamber 12. Further, the long base material is unwound from the unwinding roll, and the long base material is taken up on the take-up roll. The first film forming roll 20A and the second film forming roll 20B located in the middle of the path from the unwinding roll to the winding roll convey a long base material. In this way, a desired film is continuously formed on a partial region of the long base material transported by the first film forming roll 20A and the second film forming roll 20B and traveling in the film forming zone 22.

  In the plasma CVD film forming method according to the second embodiment, the first vacuum exhaust port 14A and the first vacuum exhaust port 14A and the first vacuum exhaust port 14A provided apart from each other so as to be mirror-symmetrical with respect to the first symmetry surface 18A and the second symmetry surface 18B. 2 The film-forming gas supplied to the film-forming zone 22 is supplied uniformly, particularly in the TD direction of the film-forming zone 22, by the vacuum exhaust port 14B and the film-forming gas supply unit 30 facing each other across the film-forming zone 22. However, it is implemented.

  For this reason, according to the plasma CVD film forming method of the second embodiment, it is possible to suppress the generation of thin film defects due to the non-uniformity of the film forming conditions and the non-uniform film forming conditions. The film quality of the film to be formed can be made uniform and good especially in the TD direction, and the barrier property can also be made uniform and good.

(Third embodiment)
A plasma CVD film forming apparatus and a film forming method using the plasma CVD film forming apparatus according to the third embodiment of the present invention will be described with reference to FIGS. 3-1, 3-2 and 3-3.

  FIG. 3A is a schematic plan view transparently showing an internal configuration when the plasma CVD film forming apparatus of the third embodiment is viewed from above. FIG. 3-2 is a schematic plan view transparently showing an internal configuration when the plasma CVD film forming apparatus of the third embodiment is viewed from the front. FIG. 3C is a schematic plan view transparently showing the internal configuration of the plasma CVD film forming apparatus of the third embodiment as viewed from the side.

The plasma CVD film-forming apparatus of 3rd Embodiment is provided between the vacuum exhaust port and the vacuum pump, and 1 or 2 or more valve | bulb which is the same number as the number of vacuum exhaust ports, and 1st symmetry It is characterized in that it is further provided with the same number of sensors as the number of vacuum exhaust ports paired with each of the vacuum exhaust ports in a mirror-symmetrical position with respect to the plane and the second symmetry plane.
Since the configuration other than the sensor and the valve is not different from that of the second embodiment already described, the same reference numerals may be given and detailed description thereof may be omitted.

<Plasma CVD film deposition system>
As shown in FIGS. 3-1, 3-2, and 3-3, the plasma CVD film forming apparatus 10 of the third embodiment includes a film forming roll 20 that can wind and convey the above-described base material. Yes. The film forming roll 20 includes a first film forming roll 20A and a second film forming roll 20B (see FIG. 3A).

  The plasma CVD film forming apparatus 10 includes an airtight vacuum chamber 12 that can exhaust the internal gas and reduce the pressure. The film forming roll 20 described above is stored in the vacuum chamber 12. As in the first and second embodiments, the vacuum chamber 12 includes the first symmetry plane 18A and the second symmetry surface with reference to the arrangement positions of the first film formation roll 20A and the second film formation roll 20B. A symmetry plane 18B is set.

  The vacuum chamber 12 includes two vacuum exhaust ports 14 (first vacuum exhaust port 14A and second vacuum exhaust port 14B) in the third embodiment.

The first vacuum exhaust port 14A and the second vacuum exhaust port 14B are arranged to be mirror-symmetric with respect to the first symmetry surface 18A and the second symmetry surface 18B.
The first vacuum exhaust port 14A and the second vacuum exhaust port 14B are arranged so that the planar shape and area of the vacuum exhaust port 14 divided by the first symmetry surface 18A are substantially equal to the second symmetry surface 18B. Are separated from each other so as to be mirror-symmetric.

  The plasma CVD film forming apparatus 10 includes a film forming gas supply unit 30. In this example, the film forming gas supply unit 30 has a tubular shape extending in the same direction as the extending direction of the rotation shafts 20 </ b> Aa and 20 </ b> Ba of the film forming roll 20, and the first film forming in the vacuum chamber 12. It is disposed opposite to the vacuum exhaust port 14 with a film forming zone 22 between the roll 20A and the second film forming roll 20B interposed therebetween. The film forming gas supply unit 30 is provided with a plurality of gas ejection nozzles directed to the film forming zone 22 so as to be arranged in the extending direction.

  The plasma CVD film forming apparatus 10 includes a vacuum pump 40. In the configuration example of the third embodiment, the first vacuum pump 40A is connected to the first vacuum exhaust port 14A via a pipe or the like, and the second vacuum pump 40B is connected to the second vacuum exhaust port 14B. Etc. are connected through. Both the first vacuum pump 40 </ b> A and the second vacuum pump 40 </ b> B are provided outside the vacuum chamber 12.

  The plasma CVD film forming apparatus 10 includes, for example, a pipe portion between the vacuum exhaust port 14 and the vacuum pump 40, and the number of valves 60 equal to the number of the vacuum exhaust ports 14. In the CVD film forming apparatus 10 of the third embodiment, a first valve 60A is provided in a pipe or the like connecting the first vacuum exhaust port 14A and the first vacuum pump 40A, and the second vacuum exhaust port. A second valve 60B is provided in a pipe or the like to which 14B and the second vacuum pump 40B are connected.

  The valve 60 can adjust the pressure in the vacuum chamber 12 by increasing or decreasing the flow rate of the gas (gas) that flows into the vacuum pump 40 from the vacuum exhaust port 14 and is discharged out of the vacuum chamber 12 by opening and closing operations. For example, a pressure regulating valve. As the valve 60, for example, a pressure adjusting mechanism including a pressure adjusting valve using a force motor as an operating mechanism is available on the market, and such a commercially available pressure adjusting mechanism can be used as the valve 60.

  The plasma CVD film forming apparatus 10 further includes a sensor 50. The plasma CVD film-forming apparatus 10 of the third embodiment includes a first sensor 50A paired with the first vacuum exhaust port 14A at a mirror-symmetrical position with respect to the first symmetry plane 18A and the second symmetry plane 18B, A second sensor 50B that is paired with the second vacuum exhaust port 14B is provided. Here, “pairing” means that the operation of the valve 60 corresponding to the vacuum exhaust port 14 and the operation of the sensor 50 correspond to each other to form a pair.

  In the third embodiment, the sensor 50 is installed at a position facing the vacuum exhaust port 14 provided in the vacuum chamber 12. Specifically, the first sensor 50A is provided at a position facing the first vacuum exhaust port 14A with the first film forming roll 20A, the second film forming roll 20B, and the film forming gas supply unit 30 interposed therebetween. A second sensor 50B is provided at a position facing the second vacuum exhaust port 14B across the first film forming roll 20A, the second film forming roll 20B, and the film forming gas supply unit 30.

  In the third embodiment, the number of the vacuum exhaust ports 14 and the number of the sensors 60 correspond to each other because they correspond to each other, but the present invention is not limited to this. For example, two sensors are provided for one vacuum exhaust port 14. 50 may be provided correspondingly.

  Examples of the sensor 50 include a pressure sensor that can measure the pressure in the vacuum chamber 12 in the vicinity of the installation location or can detect a change from a set value of the pressure. The sensor 50 only needs to be able to measure the pressure (atmospheric pressure) in the vacuum chamber 12, such as a Pirani gauge, a Schulz gauge, an ion gauge, a capacitance-type absolute pressure vacuum gauge, a B-A gauge, a Penning vacuum gauge, and the like. Although it can be used, a sensor that can measure stably and accurately in a pressure range of 0.1 Pa to 50 Pa is preferable. Such a pressure sensor is commercially available, and such a commercially available pressure sensor can be used as the sensor 50.

  In the third embodiment, the configuration example in which the sensor 50 is provided at a position facing the paired vacuum exhaust ports 14 has been described. However, the sensor 50 is provided, for example, in the vicinity of the paired vacuum exhaust ports 14. It is good also as a structure currently provided. In this case, the vacuum exhaust port 14 and the paired sensors 50 are preferably provided as close as possible. If comprised in this way, the pressure measurement by the sensor 50 and the adjustment of the pressure by the valve | bulb 60 can be implemented more precisely.

  Further, the sensor 50 may be provided integrally with the valve 60 provided between the paired vacuum exhaust port 14 and the vacuum pump 40.

  With such a configuration, the control corresponding to, for example, pressure fluctuation detected by the sensor 50 can be performed more quickly and more accurately by the opening / closing operation of the valve 60.

  In the third embodiment, the configuration in which different vacuum pumps 40 are connected to the first vacuum exhaust port 14A and the second vacuum exhaust port 14B has been described, but the first vacuum exhaust port 14A and the second vacuum exhaust port 14B are connected to each other. A valve 60 may be provided for each of the two pipes and the like, and the two pipes may be integrated into one pipe at a later stage than each valve 60 and connected to one vacuum pump 40.

  By configuring the first vacuum exhaust port 14A, the second vacuum exhaust port 14B, the sensor 50, and the valve 60 as described above, the pressure in the vacuum chamber 12, the concentration of the supplied deposition gas, the generation of discharge plasma, etc. In particular, since the film formation conditions in the TD direction (the direction in which the rotation axis of the film formation roll 20 extends) can be actively controlled using the sensor 50 and the valve 60 in particular, the uniformity of the film formation conditions can be accurately adjusted. Can do. Therefore, the generation of thin film defects caused by the non-uniformity of the film formation conditions and the non-uniformity of the film formation conditions can be accurately suppressed. Therefore, the film quality of the film to be formed is more uniform especially in the TD direction. The barrier property can be made more uniform and better.

<Film formation method>
In carrying out the plasma CVD film forming method of the third embodiment, a plasma CVD film forming apparatus 10 having the configuration described with reference to FIGS. 3-1, 3-2 and 3-3 is prepared.
Next, the above-mentioned long base material unwound from an unillustrated unwinding roll can be conveyed to the first film forming roll 20A and the second film forming roll 20B provided in the vacuum chamber 12, and Wind it so that it can be wound on a winding roll.

  Next, a film forming gas is supplied from the film forming gas supply unit 30 to the film forming zone 22, and the first vacuum pump 40A and the second vacuum pump 40B are operated. Further, the discharge plasma generating member is operated by adjusting the pressure (degree of vacuum) in the vacuum chamber 12. Further, the long base material is unwound from the unwinding roll, and the long base material is taken up on the take-up roll. The first film forming roll 20A and the second film forming roll 20B located in the middle of the path from the unwinding roll to the winding roll convey a long base material. In this way, a desired film is continuously formed on a partial region of the long base material transported by the first film forming roll 20A and the second film forming roll 20B and traveling in the film forming zone 22.

  The plasma CVD film forming method of the third embodiment is configured in a predetermined manner by a vacuum exhaust port 14 configured in the same manner as the second embodiment already described, and a sensor 50 and a valve 60 further provided. It implements, adjusting so that it may become film | membrane conditions (pressure).

  The film forming conditions are adjusted by, for example, a sensor 50 that detects a change in pressure when one or both of the first sensor 50A and the second sensor 50B, which are pressure sensors, detects a change in pressure in the vacuum chamber 12. This is implemented by opening and closing the valve 60 provided corresponding to the vacuum exhaust port 14 paired with the.

  The adjustment of the pressure in the vacuum chamber 12 is specifically an adjustment in the direction of increasing the decreased pressure, by closing the valve 60 or decreasing the opening / closing amount, and adjusting in the direction of decreasing the increased pressure. If there is, it may be adjusted to a predetermined pressure by increasing the opening / closing amount of the valve 60.

  Although the example of adjusting the pressure as the film forming condition has been described, for example, a gas sensor or a flow rate sensor is used as the sensor 50 to detect a change in the component amount of the film forming gas, a change in the composition, or a change in the gas flow rate. It can also be set as the structure adjusted by controlling opening / closing of this.

  If the film formation conditions are adjusted as described above, the film formation gas supplied from the film formation gas supply unit 30 can be supplied while being uniformly controlled in the film formation zone 22, particularly in the TD direction. Therefore, the generation of thin film defects caused by the non-uniformity of the film formation conditions and the non-uniformity of the film formation conditions can be suppressed more precisely. It can be made favorable, and as a result, the barrier property can be made uniform and good.

(Fourth embodiment)
A plasma CVD film forming apparatus and a film forming method using the plasma CVD film forming apparatus according to the fourth embodiment of the present invention will be described with reference to FIGS.

FIG. 4A is a schematic plan view transparently showing the internal configuration of the plasma CVD film forming apparatus of the fourth embodiment as seen from the side. FIG. 4B is a schematic block diagram illustrating the configuration of the automatic control unit according to the fourth embodiment. FIG. 5 is a schematic flowchart for explaining the operation of the plasma CVD film forming apparatus of the fourth embodiment.
The plasma CVD film-forming apparatus of 4th Embodiment is provided between the vacuum exhaust port and the vacuum pump, and the 1st or two or more valve | bulb which is the same number as the number of vacuum exhaust ports, and 1st symmetry It is characterized in that it is further provided with the same number of sensors as the number of vacuum exhaust ports paired with each of the vacuum exhaust ports in a mirror-symmetrical position with respect to the plane and the second symmetry plane.
The configuration other than the automatic control unit 70, the sensor signal line 82, and the valve signal line 84 is the same as the third embodiment described above, and therefore, the top view and the front view are omitted, and the same configuration is used. In some cases, the same reference numerals are assigned and detailed description thereof is omitted.

<Plasma CVD film deposition system>
As illustrated in FIG. 4A, the plasma CVD film forming apparatus 10 of the fourth embodiment includes a film forming roll 20 that can wind and convey the above-described base material. The film forming roll 20 includes a first film forming roll 20A and a second film forming roll 20B.

  The plasma CVD film forming apparatus 10 includes an airtight vacuum chamber 12 that can exhaust the internal gas and reduce the pressure. The film forming roll 20 described above is stored in the vacuum chamber 12. Inside the vacuum chamber 12, the first film forming roll 20 </ b> A and the second film forming roll 20 </ b> B are arranged on the basis of the arrangement positions of the first film forming roll 20 </ b> B as in the first embodiment, the second embodiment, and the third embodiment. A symmetry plane 18A and a second symmetry plane 18B are set.

  The vacuum chamber 12 includes two vacuum exhaust ports 14 (a first vacuum exhaust port 14A and a second vacuum exhaust port 14B) in the fourth embodiment.

The first vacuum exhaust port 14A and the second vacuum exhaust port 14B are arranged to be mirror-symmetric with respect to the first symmetry surface 18A and the second symmetry surface 18B.
The first vacuum exhaust port 14A and the second vacuum exhaust port 14B are arranged so that the planar shape and area of the vacuum exhaust port 14 divided by the first symmetry surface 18A are substantially equal to the second symmetry surface 18B. Are separated from each other so as to be mirror-symmetric.

  The plasma CVD film forming apparatus 10 includes a film forming gas supply unit 30. In this example, the film forming gas supply unit 30 has a tubular shape extending in the same direction as the extending direction of the rotation shafts 20 </ b> Aa and 20 </ b> Ba of the film forming roll 20, and the first film forming in the vacuum chamber 12. It is disposed opposite to the vacuum exhaust port 14 with a film forming zone 22 between the roll 20A and the second film forming roll 20B interposed therebetween. The film forming gas supply unit 30 is provided with a plurality of gas ejection nozzles directed to the film forming zone 22 so as to be arranged in the extending direction.

  The plasma CVD film forming apparatus 10 includes a vacuum pump 40. In the configuration example of the fourth embodiment, the first vacuum pump 40A is connected to the first vacuum exhaust port 14A via a pipe or the like, and the second vacuum pump 40B is connected to the second vacuum exhaust port 14B. Etc. are connected through. Both the first vacuum pump 40 </ b> A and the second vacuum pump 40 </ b> B are provided outside the vacuum chamber 12.

  The plasma CVD film forming apparatus 10 includes, for example, a pipe portion between the vacuum exhaust port 14 and the vacuum pump 40, and the number of valves 60 equal to the number of the vacuum exhaust ports 14. In the CVD film forming apparatus 10 of the third embodiment, a first valve 60A is provided in a pipe or the like connecting the first vacuum exhaust port 14A and the first vacuum pump 40A, and the second vacuum exhaust port. A second valve 60B is provided in a pipe or the like to which 14B and the second vacuum pump 40B are connected.

  The valve 60 can adjust the pressure in the vacuum chamber 12 by increasing or decreasing the flow rate of the gas (gas) that flows into the vacuum pump 40 from the vacuum exhaust port 14 and is discharged out of the vacuum chamber 12 by opening and closing operations. For example, a pressure regulating valve.

  The plasma CVD film forming apparatus 10 further includes a sensor 50. The plasma CVD film-forming apparatus 10 of the third embodiment includes a first sensor 50A paired with the first vacuum exhaust port 14A at a mirror-symmetrical position with respect to the first symmetry plane 18A and the second symmetry plane 18B, A second sensor 50B that is paired with the second vacuum exhaust port 14B is provided.

  In the fourth embodiment, the sensor 50 is installed at a position facing the vacuum exhaust port 14 provided in the vacuum chamber 12. Specifically, the first sensor 50A is provided at a position facing the first vacuum exhaust port 14A with the first film forming roll 20A, the second film forming roll 20B, and the film forming gas supply unit 30 interposed therebetween. A second sensor 50B is provided at a position facing the second vacuum exhaust port 14B across the first film forming roll 20A, the second film forming roll 20B, and the film forming gas supply unit 30.

  The sensor 50 is a pressure sensor that can measure, for example, the pressure in the vacuum chamber 12 in the vicinity of the installation location, or can detect a change from a set value of the pressure.

  As shown in FIG. 4A, the plasma CVD film forming apparatus 10 of the fourth embodiment is connected to the sensor 50 so that the fluctuation range from the measured value or the set value measured by the sensor 50 can be input. And an automatic control unit 70 which is connected to the valve 60 and is provided so as to control the opening / closing operation of the valve 60.

  The automatic control unit 70 is connected to the sensor 50 by a sensor signal line 82. Specifically, the automatic control unit 70 is connected to the first sensor 50A through the first sensor signal line 82A, and is connected to the second sensor 50B through the second sensor signal line 82B.

  The automatic controller 70 is connected to the valve 60 by a valve signal line 84. Specifically, the automatic control unit 70 is connected to the first valve 60A via the first valve signal line 84A, and is connected to the second valve 60B via the second valve signal line 84B.

The sensor signal line 82 is a signal line for inputting the fluctuation range (data signal) from the measured value or set value measured by the sensor 50 to the automatic control unit 70.
The valve signal line 84 is a signal line for inputting a control signal from the automatic control unit 70 for controlling the opening / closing operation of the valve 60 to the valve 60.
These sensor signal line 82 and valve signal line 84 are so-called telecommunication lines. The telecommunication line means a wired or wireless information line using a medium such as electricity or light.
A functional configuration of the automatic control unit 70 will be described with reference to FIG. As illustrated in FIG. 4B, the automatic control unit 70 includes a signal input unit 72, a calculation unit 74 connected to the signal input unit 72, and a signal output unit 76 connected to the calculation unit 74. It is out.

  The signal input unit 72 is connected to the sensor 50 through a sensor signal line 82. The signal output unit 76 is connected to the valve 60 by a valve signal line 84.

The automatic control unit 70 can be realized by computer hardware including, for example, a microprocessor corresponding to the calculation unit 74, and serial connection and parallel connection interfaces corresponding to the signal input unit 72 and the signal output unit 76, for example.
The automatic controller 70 is preferably configured to be able to independently control inputs from the plurality of sensors 50 and operations of the plurality of valves 60.

  As described above, the automatic control unit 70 is further provided, so that the pressure in the vacuum chamber 12, the concentration of the supplied deposition gas, the generation of discharge plasma, etc. ) Can be precisely controlled using the sensor 50 and the valve 60 in particular, so that the uniformity of the film forming conditions can be adjusted more accurately.

<Film formation method>
In carrying out the plasma CVD film forming method of the fourth embodiment, a plasma CVD film forming apparatus 10 having the configuration described with reference to FIGS. 4-1 and 4-2 is prepared.
Next, the above-mentioned long base material unwound from the unwinding roll can be transported to the first film-forming roll 20A and the second film-forming roll 20B provided in the vacuum chamber 12, and can be wound up. Wind it so that it can be wound on a roll.

  Next, a film forming gas is supplied from the film forming gas supply unit 30 to the film forming zone 22, and the first vacuum pump 40A and the second vacuum pump 40B are operated. Further, the discharge plasma generating member is operated by adjusting the pressure (degree of vacuum) in the vacuum chamber 12. Further, the long base material is unwound from the unwinding roll, and the long base material is taken up on the take-up roll. The first film forming roll 20A and the second film forming roll 20B located in the middle of the path from the unwinding roll to the winding roll convey a long base material. In this way, a desired film is continuously formed on a partial region of the long base material transported by the first film forming roll 20A and the second film forming roll 20B and traveling in the film forming zone 22.

  In the plasma CVD film forming method of the fourth embodiment, in addition to the sensor 50 and the valve 60 configured in the same manner as the already described third embodiment, predetermined film forming conditions set in advance by the automatic control unit 70 are used. (Pressure) is carried out while adjusting.

  The film forming conditions are adjusted by, for example, a sensor 50 that detects a change in pressure when one or both of the first sensor 50A and the second sensor 50B, which are pressure sensors, detects a change in pressure in the vacuum chamber 12. This is implemented by opening and closing the valve 60 provided corresponding to the vacuum exhaust port 14 paired with the.

  Here, an example of pressure control in the vacuum chamber 12 by the automatic control unit 70 will be described with reference to FIG.

  First, the sensor 50 installed at a predetermined position in the vacuum chamber 12 measures the pressure, and acquires a measured value for the pressure (S (step) 1).

  The sensor 50 inputs the acquired measurement value as a data signal to the automatic control unit 70 (signal input unit 72) via the sensor signal line 82.

  The control unit 70 (calculation unit 74) compares the measured value with a preset setting value (S3).

  The control unit 70 determines whether or not the measured value is equal to the set value (S4). When it is determined that they are equal (Yes), the process is ended (in this case, the valve 60 is not controlled).

  When the control unit 70 determines that the measured value does not match the set value (No), the control unit 70 determines whether the measured value is smaller than the set value (S5). Note that this step may be a step of determining whether or not the measured value is larger than the set value.

  When the control unit 70 determines that the measured value is smaller than the set value (Yes), the control unit 70 (signal output unit 76) controls the opening / closing operation of the valve 60 via the valve signal line 84. The control signal is input to the valve 60, and the opening / closing amount of the valve 60 is decreased (closed) to adjust the pressure to increase (S6).

  When the control unit 70 determines that the measured value is greater than the set value (No), the control unit 70 (signal output unit 76) controls the opening / closing operation of the valve 60 via the valve signal line 84. The control signal is input to the valve 60, and the opening / closing amount of the valve 60 is increased (by opening the valve) to adjust the pressure to increase (S7).

  The automatic control unit 70 repeats the above steps to control the opening / closing operation of the valve 60 until the measured value becomes equal to the set value. When there are a plurality of sensors 50 and valves 60, the automatic controller 70 may be configured to be able to control the operations of the valves 60 independently.

  The above-described control by the automatic control unit 70 is an example, and the control by the automatic control unit 70 can be realized by various pressure control devices available in the market where control such as PID control which is a kind of feedback control is possible. .

  If the film forming conditions are adjusted by the automatic control unit as described above, the film forming gas supplied from the film forming gas supply unit can be supplied while being precisely controlled in the TD direction of the film forming zone. it can.

  EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example and a comparative example, this invention is not limited to a following example. In some cases, constituent elements of the plasma CVD film forming apparatus are described with reference numerals, and the reference numerals correspond to the constituent elements of the plasma CVD film forming apparatus already described with reference to the corresponding drawings.

(Example)
A plasma CVD film forming apparatus according to the second embodiment having the configuration described with reference to FIG. 2-1 as a plan view, FIG. 2-2 as a front view, and FIG. 2-3 as a side view. The plasma CVD film formation was performed using it. Such a plasma CVD film forming apparatus is provided so as to be axially symmetric with respect to an intersecting line 19 defined by intersecting the first symmetry plane 18A and the second symmetry plane 18B, and the first symmetry plane. The first vacuum exhaust port 14A and the second vacuum provided so as to be separated from each other along the extending direction of the rotation axis of the film forming roll 20 so as to be mirror-symmetrical with respect to the 18A and the second symmetry plane 18B. An exhaust port 14B is provided.

  As a substrate, a biaxially stretched polyethylene naphthalate film (PEN film) having a thickness of 100 μm and a length in the TD direction (width direction) of 700 mm (trade name “Teonex Q65FA” manufactured by Teijin DuPont Films Ltd.) ) Was used.

  The base material was mounted on the unwinding roll on the upstream side of the first film forming roll 20A. The substrate mounted on the unwinding roll is unwound and conveyed, and the first film forming roll 20A and the second film forming roll 20B are wound on the winding roll so as to pass through the film forming zone. Film formation was performed.

  Specifically, the vacuum chamber 12 is depressurized, a magnetic field is applied between the first film-forming roll 20A and the second film-forming roll 20B, a film-forming gas is supplied from the film-forming gas supply unit 30, and the first The film was exhausted from the first vacuum exhaust port 14A and the second vacuum exhaust port 14B, power was supplied to the film forming roll to generate plasma in the film forming zone 22, and the film forming process was performed under the following conditions. As the film-forming gas, hexamethyldisiloxane (HMDSO), which is a raw material gas, and oxygen gas, which is a reactive gas that can also function as a discharge gas, were used.

<Film formation conditions>
Supply amount of source gas: 100 sccm (Standard Cubic Centimeter per Minute, 0 ° C .; 1 atm standard)
Supply amount of oxygen gas: 1000sccm
Degree of vacuum in the vacuum chamber: 3Pa
Applied power from the power source for plasma generation: 1.6 kW
Frequency of power source for plasma generation: 70 kHz
Substrate transport speed: 0.5 m / min

  The film forming process was repeated a total of 3 times for the same substrate. The total film thickness of the film formed on the substrate was 1100 nm. After completion of the film formation process, the substrate (referred to as a film formation film) was taken out from the take-up roll.

  A circular sample (7 samples) having a diameter of 100 mm was cut out so as to be aligned along the TD direction (total length 700 mm) of the film formed, and the water vapor permeability was measured for each sample.

  Seven samples are formed in a direction from one end side to the other end side of the film forming roll 20, which is the side indicated by the white arrow A in FIG. 2-1, in a state where the film forming film is wound around the film forming roll 20. Sample 1, sample 2, sample 3, sample 4, sample 5, sample 6, and sample 7 were arranged so as to be arranged in order along the TD direction (from the lower side to the upper side in FIG. 2A).

  The water vapor transmission rate is measured under the conditions that the temperature is 40 ° C., the humidity on the low humidity side is 0% RH, and the humidity on the high humidity side is 90% RH. Name “GTR Tech-3000”).

The water vapor permeability of each sample was as follows.
Water vapor permeability (unit: g / (m ² · day))
Sample 1: <1.0 × 10 ⁻⁴
Sample 2: 1.1 × 10 ⁻⁴
Sample 3: <1.0 × 10 ⁻⁴
Sample 4: <1.0 × 10 ⁻⁴
Sample 5: 1.2 × 10 ⁻⁴
Sample 6: 1.1 × 10 ⁻⁴
Sample 7: <1.0 × 10 ⁻⁴
However, the lower limit of detection of the water vapor transmission rate by this measurement is 1.0 × 10 ⁻⁴ g / (m ² · day).

  By setting the vacuum exhaust port to which the vacuum pump is connected as described above, the barrier property (water vapor permeability) in the width direction of the formed film could be made extremely uniform. That is, the film quality of the formed film can be made uniform and favorable especially in the TD direction.

(Comparative example)
Plasma CVD film formation was performed using a conventional plasma CVD film formation apparatus having the configuration described with reference to FIG. The plasma CVD film forming apparatus includes a vacuum pump 140 in the operation mechanism accumulation unit 111 and a vacuum exhaust port 114 provided only in a wall portion that separates the operation mechanism accumulation unit 111 and the vacuum chamber 112. .

  As a base material, a biaxially stretched PEN film (manufactured by Teijin DuPont Films, trade name “Teonex Q65FA”) having a thickness of 100 μm and a length in the TD direction of 350 mm was used.

  The substrate was mounted on the unwinding roll on the upstream side of the first film forming roll 120A. The substrate mounted on the unwinding roll is unwound and conveyed, and the first film forming roll 120A and the second film forming roll 120B are wound on the winding roll so as to pass through the film forming zone. Film formation was performed.

  Specifically, the inside of the vacuum chamber 12 is depressurized, a magnetic field is applied between the first film forming roll 120A and the second film forming roll 120B, a film forming gas is supplied from the film forming gas supply unit 130, and a vacuum is applied. The film was exhausted from the exhaust port 114, power was supplied to the film forming roll to generate plasma in the film forming zone, and the film forming process was performed under the following conditions. As the film-forming gas, hexamethyldisiloxane (HMDSO), which is a raw material gas, and oxygen gas, which is a reactive gas that can also function as a discharge gas, were used.

  However, since the length in the TD direction of the base material is 350 mm corresponding to 1/2 of the length in the TD direction of the base material according to the above example, among the film forming conditions according to the above example, the source gas The film forming process was performed under the same conditions as the film forming conditions according to the above example except that the supply amount, the supply amount of oxygen gas, and the applied power from the plasma generation power source were each halved.

<Film formation conditions>
Supply amount of raw material gas: 50 sccm (0 ° C .; 1 atm standard)
Supply amount of oxygen gas: 500 sccm
Degree of vacuum in the vacuum chamber: 3Pa
Applied power from the power source for plasma generation: 0.8 kW
Frequency of power source for plasma generation: 70 kHz
Substrate transport speed: 0.5 m / min

  The film forming process was repeated a total of 3 times for the same substrate. The total film thickness of the film formed on the substrate was 1000 nm. The film formed after completion of the film forming process was taken out from the winding roll.

  A circular sample (5 samples) having a diameter of 60 mm was cut out so as to be aligned along the TD direction (total length 350 mm) of the film, and the water vapor permeability was measured for each sample.

  The five samples in FIG. 6 are on the opposite side (lower side in FIG. 6) from the side where the operation mechanism stacking unit 111 is provided in the state where the film formation film is wound around the film formation rolls (120A and 120B). Samples 8, 9, 10, 11, and 12 were formed so as to be arranged in order in the direction from one end side to the other end side of the film forming rolls 120 </ b> A and 120 </ b> B, that is, along the TD direction.

  The water vapor permeability was measured under the conditions of a temperature of 40 ° C., a low humidity side humidity of 0% RH, and a high humidity side humidity of 90% RH (model name “GTR Tech-30XASC”). )).

The water vapor permeability of each sample was as follows.
Water vapor permeability (unit: g / (m ² · day))
Sample 8: 1.1 × 10 ⁻²
Sample 9: 3.0 × 10 ⁻³
Sample 10: 6.0 × 10 ⁻³
Sample 11: 5.0 × 10 ⁻³
Sample 12: 5.0 × 10 ⁻³
However, the lower limit of detection of the water vapor transmission rate by this measurement is 1.0 × 10 ⁻³ g / (m ² · day).

  Since the arrangement of the vacuum exhaust port to which the vacuum pump is connected is as described above, the barrier property (water vapor permeability) in the width direction of the film formed was not uniform. That is, when the deposited film is viewed in the TD direction, the film quality becomes non-uniform, and a region with insufficient barrier properties is generated.

DESCRIPTION OF SYMBOLS 10, 110 CVD film-forming apparatus 12, 112 Vacuum chamber 14, 114 Vacuum exhaust port 18 Symmetry surface 18A 1st symmetry surface 18B 2nd symmetry surface 19 Crossing line 20 Film-forming roll 20A, 120A 1st film-forming roll 20B, 120B 1st 2 Film forming rolls 20Aa, 20Ba Rotating shaft 21a First area 21b Second area 21c Third area 21d Fourth area 22 Film forming zone 30 Film forming gas supply section 40, 140 Vacuum pump 40A First vacuum pump 40B Second vacuum pump 50 sensor 50A first sensor 50B second sensor 60 valve 60A first valve 60B second valve 70 automatic control unit 72 signal input unit 74 calculation unit 76 signal output unit 82 sensor signal line 82A first sensor signal line 82B second sensor signal Line 84 Valve signal line 84A First valve signal line 84B Second valve signal line 111 Actuating mechanism Accumulator 122A First film forming roll operating mechanism 122B Second film forming roll operating mechanism

Claims (14)

In a plasma CVD film forming apparatus for continuously forming a film on a base material while continuously conveying a long base material,
A film-forming roll including a first film-forming roll and a second film-forming roll disposed opposite to and parallel to the first film-forming roll, and winding and transporting the substrate;
A line segment located between the first film-forming roll and the second film-forming roll and connecting the rotation axis of the first film-forming roll and the rotation axis of the second film-forming roll with the shortest distance is 2 etc. A first symmetry plane that is divided and perpendicular to the line segment, and a second symmetry plane that bisects the overall length of the first film-forming roll and the second film-forming roll and that is perpendicular to the first symmetry plane. Is set so as to be mirror-symmetric with respect to the first symmetry plane and the second symmetry plane, or the first symmetry plane and the second symmetry plane intersect to define A vacuum chamber having one or two or more vacuum exhaust ports arranged so as to be axially symmetric with respect to the intersecting line, and storing the film forming roll;
A film forming gas supply unit for supplying a film forming gas between the first film forming roll and the second film forming roll;
A plasma CVD film forming apparatus comprising: a vacuum pump connected to the vacuum exhaust port and provided outside the vacuum chamber.   The said vacuum chamber has 1 or 2 or more vacuum exhaust ports arrange | positioned so that it may become mirror-symmetrical with respect to the said 1st symmetry plane and the said 2nd symmetry plane. Plasma CVD film forming equipment.   When the number of the vacuum exhaust ports is three or more and the number of the vacuum exhaust ports is an odd number, at least one is located on a straight line in which the first symmetry plane and the second symmetry plane are orthogonal to each other, and the first symmetry 3. The plasma CVD film forming apparatus according to claim 1, wherein the planar shape of the vacuum exhaust port divided by the plane and the second symmetry plane and the area thereof are uniform. 4. One or two or more valves provided between the vacuum exhaust port and the vacuum pump, the same number as the number of the vacuum exhaust ports;
The sensor according to claim 1, further comprising: the same number of sensors as the number of the vacuum exhaust ports paired with each of the vacuum exhaust ports at a mirror-symmetrical position with respect to the first symmetry plane and the second symmetry plane. The plasma CVD film-forming apparatus as described in any one.   The plasma CVD film-forming apparatus according to claim 4, wherein the sensor is provided at a position facing the paired vacuum exhaust ports.   The plasma CVD film-forming apparatus according to claim 4, wherein the sensor is provided in the vicinity of the paired vacuum exhaust ports.   The plasma CVD film-forming apparatus according to claim 4, wherein the sensor is provided integrally with the valve provided between a pair of vacuum exhaust ports and a vacuum pump.   Connected to the sensor, provided so that a fluctuation range from a measured value or a set value measured by the sensor can be input, and connected to the valve, so that the opening / closing operation of the valve can be controlled. The plasma CVD film-forming apparatus according to claim 4, further comprising an automatic control unit.   The plasma CVD film-forming apparatus according to any one of claims 4 to 8, wherein the sensor is a pressure sensor.   The film-forming method including the process of forming a film | membrane on a base material using the plasma CVD film-forming apparatus as described in any one of Claims 1-9. In the film-forming method including the process of forming a film | membrane on a base material using the plasma CVD film-forming apparatus as described in any one of Claims 4-7,
The sensor obtaining a measured value;
A step of controlling the opening / closing operation of the valve based on the measured value acquired by the sensor and a preset setting value to open / close the valve so that the measured value is equal to the installation value. The film-forming method of Claim 10 containing these. In the film-forming method including the process of forming a film | membrane on a base material using the plasma CVD film-forming apparatus of Claim 8.
The sensor obtaining a measured value;
The sensor inputs the acquired measurement value to the automatic control unit;
The automatic control unit controls the opening / closing operation of the valve based on the input measurement value and a preset setting value so that the valve is adjusted so that the measurement value and the installation value are equal. The film forming method according to claim 10, comprising a step of opening and closing.   The film forming method according to claim 10, wherein the sensor is a pressure sensor, and the measured value and the set value are pressure values.   The manufacturing method of a flexible substrate including the process of forming a film | membrane on the said base material with the film-forming method as described in any one of Claims 10-13.

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