JP2011134897A - Tape carrier for semiconductor device, and semiconductor device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tape carrier for a semiconductor device that has small variation in cumulative pitch of external connection terminals resulting from heating during semiconductor element mounting, can be improved in connectivity with external equipment, can suppress formation of conductive foreign matters, and can suppress unstable behavior of a wiring pattern handling electric signals to the signals not to cause that, and to provide a semiconductor device using the same. <P>SOLUTION: The tape carrier for the semiconductor device is constituted by forming a fine wiring pattern 3 on a base 2, and does not have a device hole for positioning a semiconductor element 4 to be mounted. The wiring pattern 3 includes wiring 5 which has, at one end, internal connection terminals 6 connected to electrode terminals 16 of the semiconductor element 4, and, at the other end, external connection terminals 7a and 7b connected to the external equipment. On a reverse surface of the base 2, a nonconductive member 11 is provided which has a coefficient of thermal expansion close to that of a wiring board constituting the external equipment and having wiring 5 connected to the external connection terminals 7a and 7b. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention is generally a COF (Chip On Film) tape having a structure in which a fine wiring pattern is formed on a base material made of a polyimide tape and a device hole for positioning a semiconductor element to be mounted is not provided. The present invention relates to a tape carrier for a semiconductor device called a carrier and a semiconductor device using the same.

  Generally, the wiring pattern of a tape carrier for a semiconductor device used for mounting a semiconductor element includes a number of wirings including wirings that are electrically connected to the semiconductor elements. Each of the wirings has an internal connection terminal connected to the electrode terminal of the semiconductor element at one end and an external connection terminal connected to an external device at the other end. Further, as a method of mounting the semiconductor element on the tape carrier for semiconductor devices by connecting the electrode terminal of the semiconductor element to the internal connection terminal of the wiring, in the case of the tape carrier for COF, the semiconductor element to be mounted is positioned. Since there is no device hole for this purpose, a method is generally adopted in which the electrode terminals of the semiconductor elements are collectively connected to the internal connection terminals of the wiring by the face-down method. Further, as a method of collectively connecting the electrode terminals of the semiconductor element to the internal connection terminals of the wiring, generally, after aligning the electrode terminal of the semiconductor element with the internal connection terminal of the wiring, the substrate and the semiconductor that are backed by the wiring A method is adopted in which both elements are heated and pressed from one side of the substrate or one side of the base material and collectively connected.

  On the other hand, as electronic devices become smaller and lighter and have higher functionality, the wiring density of tape carriers for semiconductor devices is increasing and the wiring is becoming finer. In particular, in tape carriers for semiconductor devices used in liquid crystal panels, the number of wires increases corresponding to the increase in the number of signals that drive and control a large number of liquid crystal elements. Are being further miniaturized. With the miniaturization of the wiring, the width of the wiring and the pitch of the wiring are reduced, and the pitch of the internal connection terminal and the external connection terminal of the wiring is also reduced.

  Under these circumstances, when mounting a semiconductor element on a tape carrier for a semiconductor device, if the electrode terminals of the semiconductor element are collectively connected to the internal connection terminals of the wiring by heating by the above connection method, this basically heats one end of the wiring. Therefore, there is a problem that the other end of the wiring in a free state is easily displaced due to the heating, and a positional deviation occurs in the external connection terminal of the wiring. Moreover, this positional deviation is accompanied by a change in the pitch of the external connection terminals of the wiring based on the difference in thermal expansion coefficient between the plastic base and the wiring made of metal such as copper. As a result, the external connection terminal is connected to the corresponding wiring of the glass wiring board that constitutes the external device such as a liquid crystal panel, especially when the cumulative pitch of the external connection terminals composed of a plurality of wirings (groups) changes greatly. In doing so, there is a problem that it is difficult to properly align and connect the two. Incidentally, the thermal expansion coefficient of polyimide is 10 to 25 ppm / K, the thermal expansion coefficient of copper is 16.8 ppm / K, and the thermal expansion coefficient of heat-resistant glass is 3.2 ppm / K.

  For this reason, when connecting the external connection terminals described above, it is important to manage the change in the accumulated pitch of the external connection terminals of the wiring within an allowable range. In consideration of the difference in thermal expansion coefficient between the base material and the wiring at the heating temperature, the management is performed in advance by correcting the pitch of the external connection terminals among the wiring pitches in advance, but it is not easy.

  In relation to this, in Patent Document 1 as a prior art document, for example, as shown in FIG. 6, an external device (not shown) is suppressed by suppressing a change in the cumulative pitch of the external connection terminals 7 a and 7 b of the wiring 5. In order to improve the connectivity, a tape carrier 1 for a semiconductor device configured by providing a metal pattern M independent of the wiring pattern 3 on the back surface of the substrate 2 on which the wiring pattern 3 is formed is described. . In FIG. 6, 4 is a semiconductor element, 13 is a sealing resin, and 22 is a solder resist provided on the surface of the wiring pattern 3.

  Here, when manufacturing the tape carrier 1 for semiconductor devices which provides the metal pattern M on the back surface of the base material 2 based on the conventional technique, it is manufactured by the following method, for example.

  That is, as a starting material, a tape-like member having a three-layer structure in which copper foil is provided on both surfaces of a base material is prepared, and a sprocket hole for in-process conveyance is formed on this by punching, and then the copper foil on the surface of the base material Photoresist is coated on top of it, and the photoresist is exposed and developed using a photomask in which a mask pattern corresponding to the wiring pattern is formed in advance. Unnecessary copper foil is removed by etching, and the remaining photo is removed. By removing the resist, a predetermined wiring pattern is formed on the surface of the substrate. Next, the copper foil on the back surface of the base material is similarly etched to form a predetermined metal pattern on the back surface of the base material. For the tape-like member thus obtained, a position mark according to the final product specification is formed by, for example, punching, and the wiring pattern is inspected based on this position mark. In addition, to prevent oxidation, after tin (Sn) plating is applied to the entire surface of the wiring pattern including the internal connection terminal portion and the external connection terminal portion of the wiring, the internal connection terminal portion and the external connection terminal portion of the wiring are protected for insulation protection. A solder resist is applied to the surface (plated surface) of the wiring pattern to be removed. At this time, it is desirable to similarly apply a solder resist to the metal pattern on the back surface of the substrate. Furthermore, processing and inspection for the product shipment specifications are performed, and a final product specification semiconductor device tape carrier is obtained.

JP 2003-68804 A

  According to the tape carrier for a semiconductor device described in Patent Document 1, by providing an independent metal pattern on the back surface of the base material on which the wiring pattern is formed, a change in the cumulative pitch of the external connection terminals of the wirings constituting the wiring pattern can be achieved. Although the effect of suppressing and improving the connectivity with external devices can be expected to some extent, when the external device is composed of a liquid crystal panel or the like equipped with a glass wiring board, the metal pattern is a glass wiring board. This does not take into account the consistency of the thermal expansion coefficient of the device, so it cannot be said that the effect of suppressing the change in the cumulative pitch of the external connection terminals due to heating when mounting a semiconductor element is sufficient, and there is a problem with the connectivity with external devices There is.

  Further, according to the tape carrier for a semiconductor device described in Patent Document 1, the metal pattern provided on the back surface of the base material is exposed, and conductive foreign matter is generated from the metal pattern when it is transported inside and outside the process. There is a fear. For a semiconductor device, an electrical short between wirings due to conductive foreign matter or the like can be a fatal defect. Therefore, the generation of conductive foreign matter is a problem, and it is desired to prevent the occurrence of the occurrence. As a countermeasure, a method of providing a solder resist on the metal pattern on the back surface of the base material can be considered. However, there is a problem that the manufacturing cost is increased and the yield is lowered, resulting in an increase in product cost. Further, the presence of the metal pattern on the back surface of the base material may cause an inappropriate behavior with respect to the signal in the wiring pattern that handles the electrical signal on the surface of the base material.

  Therefore, the object of the present invention is to reduce the change in the cumulative pitch of the external connection terminals due to heating when the semiconductor element is mounted, improve the connectivity with external devices, and suppress the occurrence of conductive foreign matter. It is also possible to provide a tape carrier for a semiconductor device and a semiconductor device using the same that can suppress this so that an inappropriate behavior with respect to the signal does not occur in a wiring pattern that handles an electrical signal. is there.

  In order to achieve the above object, the invention according to claim 1 is a tape carrier for a semiconductor device having a structure in which a fine wiring pattern is formed on a substrate and there is no device hole for positioning a semiconductor element to be mounted. The wiring pattern includes a wiring having an internal connection terminal connected to an electrode terminal of a semiconductor element at one end and an external connection terminal connected to an external device at the other end. A non-conductive member having a thermal expansion coefficient equivalent to that of a wiring board that constitutes the external device and includes wiring connected to the external connection terminal is provided on the back surface of the material. Providing a tape carrier.

  In the above, as the non-conductive member having a thermal expansion coefficient equivalent to that of the wiring board constituting the external device, for example, a heat-resistant glass member having a thermal expansion coefficient of 3.2 ppm / K, a thermal expansion coefficient of 0.5 ppm A quartz member having a thermal expansion coefficient of 1.1 ppm / K can be used.

  According to this tape carrier for a semiconductor device, by adopting the above-described configuration, in particular, heat equivalent to that of a wiring board provided with wiring that configures the external device and is connected to the external connection terminal on the back surface of the base material. By providing a non-conductive member having an expansion coefficient, the change in the cumulative pitch of the external connection terminals due to heating when the semiconductor element is mounted is small, and the change is within the allowable range when connecting to an external device. Since it can be easily stored, the connectivity with external devices can be improved, and since metal patterns are not provided as in the prior art, the generation of conductive foreign matter can be suppressed, and This can be suppressed so that an inappropriate behavior does not occur in the wiring pattern that handles the electric signal.

  According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the non-conductive member is provided on a back surface of the base material corresponding to a region excluding a bonding region of the internal connection terminals. Providing a tape carrier.

  According to this tape carrier for a semiconductor device, in addition to the above-described effects, the semiconductor element can be obtained by adopting the above-described structure, that is, the non-conductive member is not provided on the back surface of the base material corresponding to the semiconductor element bonding region Since the heating and the applied pressure during bonding are not reduced by the non-conductive member, the semiconductor elements can be bonded as before.

  The invention according to claim 3 is the semiconductor device according to claim 1 or 2, wherein the non-conductive member is provided on a back surface of the base material corresponding to a joining region of the external connection terminal. Provide a tape carrier.

  According to this tape carrier for a semiconductor device, in addition to the above effects, by adopting the above configuration, that is, by providing a non-conductive member in an effective range in improving connectivity with external devices. The range of use of the non-conductive member can be limited to be small and economical, and depending on the material and shape of the non-conductive member such as glass, there is a risk of reducing the winding property and handling of the semiconductor device tape carrier. This can be mitigated.

  The invention of claim 4 is characterized in that the non-conductive member is bonded to the back surface of the base material using an adhesive having a thermal expansion coefficient equivalent to the non-conductive member. A tape carrier for a semiconductor device as described above is provided.

  According to this semiconductor device tape carrier, in addition to the above-described effects, the non-conductive member is bonded to the back surface of the base material using an adhesive having a thermal expansion coefficient equivalent to that of the non-conductive member. As a result, depending on the material of the adhesive, the above-mentioned effect due to the non-conductive member may be reduced, but this can be prevented or suppressed.

  A fifth aspect of the present invention provides the tape carrier for a semiconductor device according to any one of the first to fourth aspects, wherein the nonconductive member is made of a glass member.

  According to this tape carrier for a semiconductor device, in addition to the above effects, a liquid crystal panel in which an external device includes a glass wiring board by adopting the above configuration, that is, a non-conductive member is made of a glass member. In this case, the coefficient of thermal expansion of the non-conductive member can be made equal to the coefficient of thermal expansion of the glass wiring board. It can be easily reduced to match the wiring board made, and the connectivity with external equipment can be improved reliably.

  According to a sixth aspect of the present invention, on the tape carrier for a semiconductor device, the tape carrier for a semiconductor device according to any one of the first to fifth aspects is used, and the electrode terminal of the semiconductor element is connected to the internal connection terminal. A semiconductor device is provided in which a semiconductor element is mounted.

  According to this semiconductor device, in addition to the above-described effects, the adoption of the above configuration, that is, the use of the semiconductor device tape carrier having the above configuration can change the cumulative pitch of the external connection terminals due to heating when the semiconductor element is mounted. The change is small and can easily be accommodated within the allowable range at the time of connection with the external device, so that the connectivity with the external device can be improved and the metal pattern is provided as in the conventional case. Because it is not a thing, it is possible to suppress the generation of conductive foreign matter, and it is possible to suppress this so that inappropriate behavior does not occur with respect to the signal in the wiring pattern that handles the electric signal. A semiconductor device having excellent reliability and characteristics can be obtained.

  According to the tape carrier for a semiconductor device and the semiconductor device using the semiconductor device according to the present invention, the change in the cumulative pitch of the external connection terminals due to heating at the time of mounting the semiconductor element is small, and the connectivity with external equipment can be improved. The generation of conductive foreign matter can be suppressed, and this can be suppressed so that inappropriate behavior does not occur with respect to the signal in the wiring pattern that handles the electrical signal.

It is explanatory drawing of the tape carrier for semiconductor devices which concerns on one embodiment of this invention, Comprising: (a) is a top view, (b) is a bottom view. It is explanatory drawing of the tape carrier for semiconductor devices which concerns on other embodiment of this invention, Comprising: It is a bottom view equivalent to FIG.1 (b). It is front sectional drawing of the semiconductor device manufactured using the tape carrier for semiconductor devices of FIG. It is explanatory drawing which shows the state which mounted the semiconductor device of FIG. 3 in external apparatuses, such as a liquid crystal panel. It is explanatory drawing of the manufacturing method of the tape carrier for semiconductor devices of FIG. It is front sectional drawing of the semiconductor device manufactured using the conventional tape carrier for semiconductor devices.

  Hereinafter, preferred embodiments of the present invention will be described with reference to FIGS. 1 to 5, but it goes without saying that the present invention is not limited to these embodiments. Here, members and parts having the same names as those in the prior art will be described with the same reference numerals.

  As described above, FIG. 1 is an explanatory view of a tape carrier for a semiconductor device according to an embodiment of the present invention, wherein (a) is a top view and (b) is a bottom view. The semiconductor device tape carrier 1 of FIG. 1 is a device hole for forming a fine wiring pattern 3 on a base material 2 made of polyimide tape and positioning a semiconductor element 4 (see FIG. 3) to be mounted. It is a tape carrier for a semiconductor device generally called a COF tape carrier having a structure not having a gap. As a semiconductor device tape carrier having a device hole structure, there is a semiconductor device tape carrier generally called a TCP (Tape Carrier Package) tape carrier.

  The wiring pattern 3 includes a large number of wirings 5 including wirings 5 electrically connected to the semiconductor element 4, and each of the wirings 5 electrically connected to the semiconductor element 4 includes One end has an internal connection terminal 6 connected to the electrode terminal of the semiconductor element 4, and the other end has external connection terminals 7a and 7b connected to an external device. Here, the relatively wide wiring 5 on the side having the internal connection terminal 6 and the external connection terminal 7a is a wiring on the input side connected to a printed board 8 (see FIG. 4) on which an electronic circuit such as a power supply is mounted. The relatively narrow wiring 5 on the side having the internal connection terminal 6 and the external connection terminal 7b is an output-side wiring connected to the liquid crystal panel 9 (see FIG. 4). In addition, among the many wirings 5, the input-side wiring 5 may be directly extended to become the output-side wiring 5 without going through the semiconductor element 4. Reference numeral 10 denotes transport sprocket holes provided on both sides in the width direction along the longitudinal direction of the tape carrier 1 for semiconductor devices.

  Here, as shown in FIG. 1B, the tape carrier 1 for a semiconductor device of the present embodiment is provided with a nonconductive member 11 made of glass on the back surface of the substrate 2. The nonconductive member 11 made of glass has the same thermal expansion coefficient as that of a glass wiring board (not shown) provided with wirings that constitute the liquid crystal panel 9 and are connected to the external connection terminals 7b. Further, as shown in the figure, the non-conductive member 11 is provided on almost the entire back surface of the base material 2 corresponding to a region excluding the bonding region P (with the semiconductor element 4) of the internal connection terminal 6. . This is for the purpose of preventing the non-conductive member 11 from reducing the heating and pressurizing force during semiconductor element bonding. Thus, by providing the non-conductive member 11 on the back surface of the base material 2, in the tape carrier 1 for a semiconductor device according to the present embodiment, the accumulation of the external connection terminals 7a and 7b due to heating when the semiconductor element is mounted. Since the change in pitch is small and the change can be easily accommodated within the allowable range when connected to the liquid crystal panel 9, the connectivity with the liquid crystal panel 9 can be improved and the conventional method can be used. Since the metal pattern M is not provided, the generation of conductive foreign matters can be suppressed, and the wiring pattern 3 that handles electrical signals can be prevented from causing inappropriate behavior with respect to the signals. Can be suppressed.

  FIG. 2 is an explanatory view of a tape carrier for a semiconductor device according to another embodiment of the present invention, and is a bottom view corresponding to FIG. In this semiconductor device tape carrier 1, the non-conductive members 11, 11 are limitedly provided on the back surface of the substrate 2 so as to correspond to the joint regions W of the external connection terminals 7 a, 7 b. Also in this case, the same effect as described above can be obtained, and the use range of the nonconductive members 11 and 11 made of glass can be reduced, and it is economical. In the case of FIG. There is a possibility that the non-conductive member 11 made of the metal may lower the winding property and handling property of the tape carrier 1 for semiconductor devices, but a secondary effect that can reduce this can be obtained. 2, the non-conductive member 11 is provided only on the back surface of the base material 2 corresponding to the bonding area of the external connection terminal 7b connected to the liquid crystal panel 9 (the bonding area of the external connection terminal 7a). The non-conductive member 11 is not provided on the back surface of the base material 2 corresponding to the above. Even in this case, it is needless to say that the same effect as described above can be obtained.

  FIG. 3 is a front cross-sectional view of a semiconductor device 12 manufactured using the semiconductor device tape carrier 1 of FIG. FIG. 4 is an explanatory diagram showing a state in which the semiconductor device 12 of FIG. 3 is mounted on an external device such as the liquid crystal panel 9.

  In FIG. 3, the semiconductor device 12 is connected to the internal connection terminals 6 of the wiring 5 of the tape carrier 1 for semiconductor devices by batch connection of the electrode terminals 16 of the semiconductor elements 4 by heating and pressurization. After the semiconductor element 4 is mounted thereon, the connection portion and its periphery are sealed with a sealing resin 13. Reference numeral 14 denotes an adhesive for adhering and fixing the nonconductive member 11 to the back surface of the substrate 2.

  Further, in FIG. 4, the wiring 5 on the input side of the semiconductor device tape carrier 1 constituting the semiconductor device 12 that is mounted by being bent as shown in FIG. Corresponding wirings of the printed circuit board 8 mounted with are connected by a heating and pressure welding method. The wiring 5 on the output side is connected to the external connection terminal 7b by a pressure contact method using an anisotropic conductive film (ACF) 15 to a corresponding wiring of a glass wiring board (not shown) constituting the liquid crystal panel 9. Is done. It goes without saying that the latter connectivity, particularly the alignment between the wires to be connected, is improved by the presence of the non-conductive member 11. Reference numeral 16 denotes an electrode terminal of the semiconductor element 4.

  Furthermore, in FIGS. 1-4, about the thermal expansion coefficient of the glass nonelectroconductive member 11 which has a thermal expansion coefficient equivalent to the glass wiring board which is equipped with the liquid crystal panel 9 (not shown), about 1-10 ppm / Since K has the above-described effect, the value can be set within the range of the equivalent thermal expansion coefficient in this case.

  In addition, in FIGS. 1 to 4, an adhesive having a thermal expansion coefficient equivalent to that of the nonconductive member 11 is used as the adhesive 14 used for bonding and fixing the nonconductive member 11 to the back surface of the substrate 2. It is done. In this regard, it is preferable to use an adhesive to fix the non-conductive member 11, however, depending on the material of the adhesive, there is a possibility that the above-described effect by the non-conductive member 11 may be reduced. In the embodiment, by using the adhesive 14 having such a thermal expansion coefficient, the fear can be prevented or suppressed in advance.

  FIG. 5 is an explanatory diagram of a method for manufacturing the semiconductor device tape carrier 1 of FIG. That is, (a) a tape-like member 18 provided with a copper foil 17 on one side of a base material 2 made of polyimide tape is prepared as a starting material, and a sprocket hole 10 (not shown) for in-process conveyance is punched into this. After the formation, (b) a photosensitive photoresist 19 is applied on the copper foil 17 on the surface of the substrate 2, and the photoresist 19 is formed using a photomask 20 in which a mask pattern corresponding to the wiring pattern is previously formed. Then, (c) the photoresist 19 is developed, (d) the unnecessary copper foil 17 is removed by etching, and (e) the remaining photoresist 19 is removed, whereby the base material 2 is removed. A wiring pattern 3 having a large number of wirings 5 on the surface is formed. Further, (f) tin (Sn) plating 21 is applied to the entire surface of the wiring pattern 3 including the internal connection terminal portion 6 and the external connection terminal portions 7a and 7b of the wiring 5 for preventing oxidation, and then the wiring 5 for insulation protection. The solder resist 22 is applied to the surface (plating surface) of the wiring pattern 3 excluding the internal connection terminal portion 6 and the external connection terminal portions 7a and 7b, and finally (g) the external connection terminal portion using the adhesive 14 Non-conductive members 11 and 11 made of glass members are bonded and fixed to the back surface of the base material 2 corresponding to 7a and 7b, respectively, and a predetermined tape carrier 1 for a semiconductor device is manufactured.

  The semiconductor device tape carrier 1 is further processed and inspected for product shipment specifications to obtain a final product specification tape carrier for semiconductor devices. Moreover, as a method of forming the copper foil 17 on the surface of the base material 2, in addition to the method of forming the copper foil 17 on the surface of the base material 2 by sputtering / plating, the base material is formed on the surface of the separately manufactured copper foil 17. There is a method of applying an insulating material constituting 2, and any of them can be adopted. In addition, as a countermeasure against the generation of foreign matter from the nonconductive member 11 made of glass at the time of in-process conveyance, the generation of foreign matters is suppressed by providing a buffer material made of, for example, a polyimide tape having a thickness of 50 μm on the conveyance line. It is possible. If the material of the buffer material is softer than the non-conductive member, there is no particular problem in use. In addition, in this case, even if a foreign matter is generated, it is an insulating foreign matter and is unlikely to cause a problem such as a conductive foreign matter.

  According to the manufacturing method of the tape carrier 1 for semiconductor devices, since the conventional manufacturing line can be used as it is except that the non-conductive member 11 is bonded and fixed to the back surface of the base material 2, the number of processes can be increased. It can be minimized.

  A tape-shaped member provided with a copper foil having a thickness of 8 μm on one side of a substrate made of a polyimide tape having a thickness of 38 μm is prepared as a starting material by the manufacturing method of FIG. 5, and the above steps (a) to (f) are performed. After forming a predetermined wiring pattern on the surface of the base material, the back surface of the base material has a thermal expansion coefficient equivalent to that of a liquid crystal panel provided with a glass wiring board having a thermal expansion coefficient of 3.2 ppm / K. As a non-conductive member, a heat-resistant glass member having a thermal expansion coefficient of 3.2 ppm / K was bonded and fixed to manufacture a tape carrier for a semiconductor device.

  Using this semiconductor device tape carrier, a semiconductor device is manufactured by mounting a semiconductor element on the semiconductor device tape carrier, and the semiconductor device is mounted on a liquid crystal panel. It has been found that the change in the accumulated pitch is small, and that the change can be easily accommodated within the allowable range when connected to the liquid crystal panel. Therefore, adjustment work such as correcting the accumulated pitch change in advance and correcting the wiring connection pitch, especially the pitch of the external connection terminal, is unnecessary or remarkably simplified. Since the metal pattern is not provided as in the prior art, the generation of conductive foreign matter can be suppressed, and the wiring pattern 3 that handles the electrical signal can be used for the signal. It can be seen that this can be suppressed so that inappropriate behavior does not occur.

DESCRIPTION OF SYMBOLS 1 Tape carrier for semiconductor devices 2 Base material 3 Wiring pattern 4 Semiconductor element 5 Wiring 6 Internal connection terminal 7a, 7b External connection terminal 8 Printed circuit board 9 Liquid crystal panel 10 Sprocket hole 11 Nonconductive member 12 Semiconductor device 13 Sealing resin 14 Adhesion Agent 15 Anisotropic conductive film 16 Electrode terminal 17 Copper foil 18 Tape-like member 19 Photosensitive photoresist 20 Photomask 21 Tin plating 22 Solder resist

Claims (6)

  A tape carrier for a semiconductor device having a structure in which a fine wiring pattern is formed on a substrate and having no device hole for positioning a semiconductor element to be mounted, the wiring pattern having a semiconductor element at one end thereof An internal connection terminal connected to the electrode terminal of the substrate, and a wiring having an external connection terminal connected to an external device at the other end. A tape carrier for a semiconductor device, characterized in that a non-conductive member having a thermal expansion coefficient equivalent to that of a wiring board provided with wirings connected to connection terminals is provided.   2. The tape carrier for a semiconductor device according to claim 1, wherein the non-conductive member is provided on a back surface of the base material corresponding to a region excluding a bonding region of the internal connection terminals.   3. The tape carrier for a semiconductor device according to claim 1, wherein the non-conductive member is provided on a back surface of the base material corresponding to a bonding region of the external connection terminal.   4. The semiconductor device according to claim 1, wherein the non-conductive member is bonded to the back surface of the base material using an adhesive having a thermal expansion coefficient equivalent to the non-conductive member. Tape carrier.   The tape carrier for a semiconductor device according to claim 1, wherein the non-conductive member is made of a glass member.   6. The semiconductor device tape carrier according to claim 1, wherein the electrode terminal of the semiconductor element is connected to the internal connection terminal, and the semiconductor element is mounted on the semiconductor device tape carrier. A semiconductor device comprising:

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