JP2011134825A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a reliable semiconductor device. <P>SOLUTION: The semiconductor device includes a package body 1, a lead terminal partially covered with the package body 1. The lead terminal includes a first lead 3 having a semiconductor placing region and a second lead 4 having a wire connecting region to be connected with a conductive wired from a semiconductor element, arranged on both sides of an exposed part of the package body, wherein the first lead 3 has a corner 3a with a curve on a side of the second lead 4, semiconductor elements 2a, 2b are die-bonded to an inside of the corner 3a with a die bond agent, a first groove 7 and a second groove 8 are provided between a side constituting the corner 3a and the semiconductor elements 2a, 2b, respectively, and the first groove 7 and the second groove 8 are spaced at the corner 3a. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device on which a semiconductor element is mounted, and more particularly to a light emitting device used for a backlight of a liquid crystal display, a panel meter, a display lamp, a portable electronic device, and the like.

  In recent years, a semiconductor device equipped with a light emitting element has a plurality of light emitting elements mounted in one package, a light emitting element of a different light emission color, or a different semiconductor element having a different function from the light emitting element. As a result, products that can be used for various purposes have been developed. For example, in order to ensure the reliability of a light emitting element, a semiconductor device is provided in which a protective element for protecting the light emitting element from destruction due to overvoltage is mounted together with the light emitting element.

  An example of such a semiconductor device will be described more specifically below. A semiconductor device includes a support provided with a recess for accommodating a semiconductor element, a lead terminal exposed on the bottom surface of the recess, a light emitting element disposed on the lead terminal, and a lead terminal in the recess. And a conductive member that connects the electrodes of the semiconductor elements and the lead terminals of the support, and a sealing member that covers the elements and the conductive wires in the recesses. The light emitting element and the protective element bonded to the mounting portion are die-bonded to the mounting portion of the lead terminal with a die bonding agent such as an insulating adhesive such as an epoxy resin or a conductive adhesive such as silver paste.

  In such a semiconductor device, when a part of the die bond agent applied on the lead terminal flows on the lead terminal to the connection portion of the conductive wire, the connection portion of the conductive wire is covered with the die bond agent, There is a concern that the connection strength of the conductive wire to the connection portion may decrease. In addition, the insulating adhesive that adheres the light emitting element to the lead terminal and the conductive adhesive that adheres the protective element may interfere with each other, thereby impairing the respective functions.

  Therefore, for example, a semiconductor device has been proposed in which a groove is provided on the main surface of the lead terminal between the mounting portion of the semiconductor element and the connecting portion of the conductive wire to suppress the flow of the die bond agent on the same lead terminal ( For example, see Patent Documents 1 to 4). Further, in Patent Document 4, in order to suppress the flow of the die bond agent from one lead terminal to the other lead terminal, a part of the insulating support portion is further exposed between the pair of positive and negative lead terminals. There have also been proposed a structure in which a convex portion is provided in the insulating separation portion, or a structure in which a groove portion is provided at a position along the insulation separation portion of the lead terminal main surface.

JP 2008-98218 A JP 2008-91864 A JP 2008-112966 A JP 2009-16636 A

  In recent years, the demand for miniaturization of semiconductor devices has increased, and there is a tendency for the mounting portion of the semiconductor element and the connection portion of the conductive wire to approach each other. For this reason, it is required to suppress not only the flow of the die bond agent on the same lead terminal but also the flow of the die bond agent to the connection portion arranged on the lead terminal different from the mounting portion. However, the structure in which the protrusions are provided in the insulating separation part of the conventional semiconductor device is difficult to control the size and shape of the protrusions, and the conventional lead terminal main surface is provided with the groove along the insulation separation part. Since the groove portion along the insulating separation portion intersects with the other groove portion and completely surrounds the mounting portion of the semiconductor element, the flow location when the die bond agent exceeds the groove portion cannot be specified, which is not sufficient.

  In order to solve the above problems, a semiconductor device includes a package main body and a lead terminal partially covered with the package main body, and the lead terminal is disposed across an exposed portion of the package main body. And a first lead having a semiconductor element mounting region and a second lead having a wire connection region to which a conductive wire from the semiconductor element is connected, and the first lead is on the second lead side, A corner portion having a curve, and the semiconductor element is die-bonded by a die-bonding agent inside the corner portion, and a first groove portion and a second groove portion are provided between the side constituting the corner portion and the semiconductor element, respectively. The first groove portion and the second groove portion are separated from each other at the corner portion.

The following configurations can be combined with the above light-emitting device.
In the corner portion, a portion facing the semiconductor element between the first groove portion and the second groove portion is a curve.
The sides constituting the corner portion are connected by an arc having a center in the semiconductor element mounting region.
The second lead has a first wire connection region and a second wire connection region, and the first groove is formed between the semiconductor element mounting region and the first wire connection region, and the semiconductor The second groove portion was formed between the element placement region and the second wire connection region.
The first lead includes a third wire connection region to which a conductive wire from the semiconductor element is connected, and a third groove portion that divides the third wire connection region and the semiconductor element placement region.
The third groove protrudes from the semiconductor element mounting region and extends to a position facing the second lead.
The first groove portion and the second groove portion are substantially linear.
The first groove part and the second groove part have a region higher than a reference plane of the first lead around the first groove part and the second groove part.

  According to the present invention, the flow of the die-bonding agent can be controlled by the first and second groove portions and the corner portion of the lead terminal, and a highly reliable semiconductor that does not cause poor adhesion of semiconductor elements or poor connection of conductive wires. It can be a device.

FIG. 1 is a schematic front view showing a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing the semiconductor device according to the first embodiment of the present invention. FIG. 3 is a schematic cross-sectional view for explaining the shape of the groove. FIG. 4 is a schematic front view showing the semiconductor device according to the second embodiment of the present invention.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the embodiments described below exemplify a semiconductor device and a method for forming the semiconductor device for embodying the technical idea of the present invention, and the present invention does not limit the semiconductor device and the method for forming the semiconductor device to the following. Absent.

  Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. The dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the description unless otherwise specified. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference sign indicate the same or the same members, and detailed description will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing.

[Embodiment 1]
FIG. 1 is a schematic front view of a semiconductor device according to Embodiment 1 of the present invention. FIG. 2 is a schematic cross-sectional view of the semiconductor device in the AA direction of FIG. The semiconductor device includes a package body 1 having a recess, semiconductor elements 2 a and 2 b mounted in the recess of the package body 1, a part of the package body 1 is covered, and a part of the semiconductor body is exposed. And a first lead 3 and a second lead 4 that form a wire connection region. Between the first lead 3 and the second lead 4, there is an exposed portion 5 where the package body 1 is exposed. The semiconductor elements 2a and 2b are die-bonded to the semiconductor element mounting region of the first lead 3 via a die-bonding agent, and are electrically connected to the first lead 3 and the second lead 4 by the conductive wire 6, respectively. ing. The semiconductor element mounting region and the conductive wire connection region are provided on the main surface of the lead terminal exposed at the bottom of the recess of the package body. The first lead 3 further has a third groove 9 that separates the semiconductor element mounting region and the wire connection region. In the present embodiment, the semiconductor element 2a is a light emitting element, and the semiconductor element 2b is a protective element.

  The first lead 3 has a curved corner portion 3a on the second lead 4 side, and the semiconductor elements 2a and 2b are die-bonded by a die-bonding agent inside the corner portion 3a. A first groove portion 7 and a second groove portion 8 are provided on the main surface of the first lead 3. The first groove portion 7 and the second groove portion 8 are respectively provided between each side constituting the corner portion 3a and the semiconductor elements 2a and 2b, and are separated from each other at the corner portion 3a.

  As described above, the curved portion of the corner portion 3a is arranged at a position where the first groove portion 7 and the second groove portion 8 are separated from each other, so that the die bond agent flowing out from between the first groove portion 7 and the second groove portion 8 is cornered. It is possible to flow along the portion 3 a and suppress the outflow to the second lead 4. This is because the corner portion 3 a is in contact with the exposed portion 5 of the package body, and the die bond agent that flows on the first lead 3 from the semiconductor element mounting region and reaches the corner portion 3 a flows out to the exposed portion 5. This is because there is a tendency to flow along the lead end. Furthermore, since the corner portion 3a has a rounded shape, the die bond agent flowing out from between the first groove portion 7 and the second groove portion 8 can flow smoothly along the lead end without staying in the corner. If the die bond agent stays in the corner, the die bond agent concentrated in the corner may flow out from the lead end to the exposed portion 5 and reach the second lead 4 having the wire connection region. By setting it as the corner part 3a which has a curve, the outflow to the exposed part 5 of a die-bonding agent can be suppressed, and the outflow to the 2nd lead | read | reed 4 can be suppressed. In addition, when the first groove portion 7 and the second groove portion 8 are connected, when the die bond agent flows out beyond the groove portion, it is impossible to specify the position to flow out, so the first groove portion 7 and the second groove portion 8. Are spaced apart at the corner 3a. As a result, the die bonding agent can be encouraged to flow to the corner portion 3 a between the first groove portion 7 and the second groove portion 8.

(Groove)
The groove provided in the lead terminal suppresses the flow of the die bonding agent that connects the semiconductor element onto the lead terminal, and thereby affects the connection area of the adjacent conductive wire and the connection of the semiconductor element. Is to prevent. As shown in FIG. 1, the positions where the grooves 7, 8 and 9 are provided include a space between the mounting region of the semiconductor elements 2a and 2b and a connection region of the conductive wire 6 from the semiconductor elements 2a and 2b, or a semiconductor element. It can be provided in between. By providing the groove portion at such a position, the flow of the die bond agent can be prevented, and by forming the groove portion, the flow of the die bond agent is promoted in a predetermined direction (direction of the groove portion), and the corner portion. To 3a. The first groove portion and the second groove portion are preferably provided along the sides constituting the corner portion, and the distance from the sides is preferably about 0.01 to 0.1 mm. The distance between the first groove and the second groove is preferably at least not reaching the lead end, and can be, for example, about 0.1 to 0.3 mm.

  The groove part may be provided so as to extend from these regions. For example, as shown in FIG. 1, a third groove portion 9 provided between the placement region of the semiconductor elements 2a and 2b and the connection region of the conductive wire 6 is extended so as to protrude from the semiconductor element placement region. May be present. As a result, the distance between the terminal portion of the third groove 9 and the semiconductor elements 2a and 2b increases, so that the die bond agent bypasses the third groove 9 and the wire connection region (third wire connection region) of the first lead 3 It is possible to lengthen the route to reach, and to suppress the outflow to the third wire connection region. As shown in FIG. 1, in the case of a semiconductor device in which the first lead 3 protrudes toward the second lead 4 and the protruding portion serves as a semiconductor element mounting area, the semiconductor element mounting area is not reduced and the third lead The groove 9 can be extended. At this time, the third groove portion 9 is preferably extended to a position facing the second lead 4, that is, formed along the exposed portion 5 of the package body. Moreover, it is preferable that each groove part is mutually spaced apart. As shown in FIG. 1, by separating the third groove portion 9 from the first groove portion 7, the die bonding agent can be urged to flow between the third groove portion 9 and the first groove portion 7. By detouring, the path to reach the wire connection area can be lengthened.

  The groove is provided so as not to reach the end of the lead terminal. If the groove reaches the end of the lead terminal, when the package body is molded by injection molding, the package resin enters the groove, causing a decrease in the adhesion between the package body and the lead terminal and the embedding of the groove. Because there are things.

  The groove portion can be formed when a lead terminal is processed into a predetermined shape from a plate-like metal. That is, after punching to a predetermined outer shape, a straight groove is formed by pressing from the surface of the plate metal using a processing tool shaped like a tip of a minus driver, for example. can do. By doing in this way, the groove part which does not penetrate a lead terminal can be formed. In addition, by changing the tip shape of the processing tool, the shape of the groove (the shape in plan view or the shape in the depth direction), the depth, and the like can be changed. In FIG. 2, the cross section is formed in a V shape (triangle), but the shape is not limited to this. It can also be. Further, the groove can be formed by laser beam irradiation, etching, and cutting in addition to the above-described method using pressing.

  Further, by forming the groove portion by pressing as described above, a region higher than the reference plane of the lead terminal can be formed around the groove portion. This is because the periphery of the pressing portion is raised by pressing the plate-like metal, and an area higher than the reference plane of the lead terminal can be formed.

  An example of the cross-sectional shape of the groove is shown in FIG. For example, when a fixture that prevents the plate-shaped metal from being raised in the vicinity of the pressing portion is used, a projection as a region 22a higher than the reference plane (B-B line) is formed around the groove portion 21 as shown in FIG. Can be provided. Further, when the groove 21 is formed only by pressing without using such a fixture, the region 22b higher than the reference plane is formed as a gradually raised state as shown in FIG. 3B. be able to. In this way, by forming not only the groove but also a region higher than the reference plane, it is possible to more efficiently prevent the die bond agent from flowing, and to promote the die bond agent to flow into the separation region between the groove portions.

  In addition, when a plurality of groove portions are provided, if the groove portions having different directions are crossed, the above-described raised state becomes excessive, thereby forming a gap between the mold and the package resin when forming the package. May flow into the gap, so that the groove is preferably separated from this point as well.

  As the shape of the groove in plan view, a linear shape as shown in FIG. 1 or a curved shape can be used. Preferably it is substantially linear. The groove is preferably formed along the exposed portion of the package body.

  1 has one row for each groove portion in the semiconductor device shown in FIG. 1, but a plurality of grooves having substantially the same extending direction may be included in each groove portion. By including a plurality of grooves in each groove part, the effect of suppressing the flow of the adhesive can be enhanced. On the other hand, by making each groove part in only one row, the distance between the side of the first lead and the semiconductor element can be reduced, and the manufacturing process can be simplified.

(Lead terminal)
The shape of the lead terminal is not particularly limited. A function that can be electrically connected to the semiconductor light-emitting element, and is partly embedded in the base and extended so as to protrude from the outside of the base, and the extended portion can be electrically connected to the outside. As long as it has. As a material for the lead terminal, it is preferable to use a material having a relatively large thermal conductivity. By forming with such a material, the heat generated in the semiconductor element can be efficiently released. For example, those having a thermal conductivity of about 200 W / (m · K) or more are preferable. Furthermore, a material having a relatively large mechanical strength or a material that can be easily punched or etched or etched is preferable. Specific examples include metals such as copper, aluminum, gold, silver, tungsten, iron, nickel, iron-nickel alloys, phosphor bronze, iron-containing copper, and the like.

  The lead terminal includes a first lead and a second lead, and the first lead includes a corner portion having a curve. If the corner portion of the first lead is rounded, the die bond agent tends to stay and the die bond agent may overflow, but by making the corner portion having a curve smoothly, the die bond agent does not stay. It can be made to flow. The curved portion is preferably disposed at a position where the first groove portion and the second groove portion are separated from each other, and is disposed at a position facing the semiconductor element between the first groove portion and the second groove portion. The corner portion preferably has a shape in which sides are connected by a curve. Further, the curved portion is preferably an arc having a center in the semiconductor element mounting region of the first lead 3 as shown in FIG. 1, and a corner portion 3a in which sides are connected by the arc. preferable.

  As shown in FIG. 1, a plurality of conductive wires 6 can be connected to the second lead 4. At this time, as shown in FIG. 1, the corner portion 3 a is preferably provided so as to face the region between the plurality of wire connection regions of the second lead 4, and between the first wire connection region and the semiconductor element region. The first groove portion 7 is provided, and the second groove portion 8 is provided between the second wire connection region and the semiconductor element region. As a result, it is possible to lengthen the path for the die bond agent bonded to the first lead to reach the wire connection region of the second lead by bypassing the groove portion, and thus it is possible to suppress the outflow of the die bond agent to the wire connection region.

  The second lead may be a lead having a semiconductor element mounting region. In particular, when different die bond agents are used for the first lead and the second lead, there is a concern that the adhesive force may be reduced when different die bond agents are mixed. By providing the first groove portion and the second groove portion, it is possible to suppress the outflow of the die bond agent and suppress the decrease in the adhesive force. Further, the distance between the first lead and the second lead, that is, the width of the exposed portion of the package body can be set to, for example, about 0.1 to 0.5 mm.

(Package body)
As a specific material of the resin constituting the package, an insulating member is preferable. In addition, when a semiconductor light emitting element is used as the semiconductor element, a member that hardly transmits light from the semiconductor light emitting element or external light is preferable. Further, it has a certain degree of strength, and a thermosetting resin, a thermoplastic resin, or the like can be used. More specifically, a phenol resin, a glass epoxy resin, a BT resin, PPA, or the like can be given.

  The package body preferably has a recess in which a semiconductor element can be placed. The recess has a side surface and a bottom surface, and a lead terminal is exposed on the bottom surface, and a semiconductor element placement region and a wire connection region are provided on the exposed lead terminal. By enclosing at least one of the semiconductor element mounting region and the wire connection region with the concave side surface and the groove of the package body, the flow of the die bond agent can be efficiently suppressed.

(Sealing member)
Although not shown, the upper surface of the lead terminal on which the semiconductor element is placed is preferably sealed with a sealing member. The sealing member is a member that protects the semiconductor element and the conductive wire placed on the package from dust, moisture, external force, and the like. When the semiconductor light emitting element is used as the semiconductor element, the light from the semiconductor light emitting element is used. Those having translucency capable of transmitting light are preferable. Specific examples of the material include silicone resin, epoxy resin, and urea resin. In addition to such materials, a colorant, a light diffusing agent, a filler, a color conversion member (phosphor), and the like can be included as desired. The sealing member is preferably used in an amount that completely covers the semiconductor element.

(Die bond agent)
As the die bond agent, either a conductive die bond agent or an edge die bond agent can be selected depending on the type of semiconductor element or substrate to be placed. For example, in the case of a semiconductor element in which a nitride semiconductor layer is laminated on sapphire, which is an insulating substrate, the die bonding member can be either insulating or conductive. When a conductive substrate such as a SiC substrate is used, Conductive die bonding members can be used to achieve electrical connection with the lead terminals. As the insulating die bond agent, an epoxy resin, a silicone resin, or the like can be used. In addition, as the conductive die-bonding agent, conductive paste such as silver, gold, and palladium, solder such as Au—Sn eutectic, and brazing material such as low melting point metal can be used. Furthermore, among these die-bonding agents, in particular, when a translucent die-bonding agent is used, a fluorescent member that absorbs light from the semiconductor light-emitting element and emits light of different wavelengths can be included therein.

(Conductive wire)
The conductive wire that connects the electrode of the semiconductor light emitting element and the conductive member provided in the package is required to have good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with the conductive member. Specific examples of such conductive wires include conductive wires using metals such as gold, copper, platinum, and aluminum, and alloys thereof.

(Semiconductor element)
As the semiconductor element, a semiconductor light-emitting element such as a light-emitting diode (LED) or an element that is die-bonded to a lead terminal by a die-bonding agent such as a protective element can be used. Although FIG. 1 shows the semiconductor elements 2a and 2b in which a pair of positive and negative electrodes are formed on one side, a semiconductor element in which a pair of positive and negative electrodes are formed on both sides can also be used. In the case of the double-sided electrode structure, for example, the electrode on the back surface side of the semiconductor element is connected to one lead terminal with a conductive die bond agent, and the electrode on the top surface side is connected to the other lead terminal with a conductive wire.

A semiconductor light emitting device having an arbitrary wavelength can be selected. For example, as blue and green light emitting elements, those using ZnSe or a nitride semiconductor (In _X Al _Y Ga _1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) are used. it can. As the red light emitting element, GaAs, InP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light emitting element to be used can be appropriately selected according to the purpose. Further, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. Furthermore, a light receiving element or the like can be mounted together with the semiconductor light emitting element.

[Embodiment 2]
FIG. 4 shows a schematic front view of a semiconductor device according to the second embodiment of the present invention. The semiconductor device of the second embodiment is the same as that of the first embodiment except that the shape of the corner portion 33a of the first lead 3 is different from the arrangement of the semiconductor elements 2a and 2b and that the third groove portion is not provided. It is the same. In the semiconductor device according to the first embodiment shown in FIG. 1, the curved portion connecting the sides constituting the corner portion 3a is an arc having a center in the semiconductor element mounting region of the first lead 3. In the semiconductor device according to the second embodiment shown in FIG. 2, the arc has a center outside the first lead 3.

  In the corner portion 33a, the sides constituting the corner portion 33a are connected by a curved line, and the first groove portion 7 and the second groove portion 8 are separated from each other by the curved portion. Therefore, the semiconductor elements 2a and 2b are die-bonded. The die bond agent is urged to flow between the first groove portion 7 and the second groove portion 8, and the die bond agent is caused to flow along the corner portion 33 a, and the outflow of the die bond agent to the second lead 4 can be suppressed. Similarly to the semiconductor device of the first embodiment, a third groove may be provided between the semiconductor element placement region of the first lead and the wire connection region.

  The semiconductor device according to the present invention is used for various display devices, lighting fixtures, displays, backlight light sources for liquid crystal displays, and light emitting devices such as image reading devices and projector devices in facsimiles, copiers, scanners, and the like. Can do.

DESCRIPTION OF SYMBOLS 1 Package body 2a, 2b Semiconductor element 3 1st lead 3a, 33a Corner part 4 2nd lead 5 Exposed part 6 Conductive wire 7 1st groove part 8 2nd groove part 9 3rd groove part 21 Groove parts 22a, 22b It is higher than a reference plane region

Claims (8)

A package body, and a lead terminal partially covered by the package body,
The lead terminal includes a first lead having a semiconductor element placement region and a second lead having a wire connection region to which a conductive wire from the semiconductor element is connected, and is disposed across the exposed portion of the package body. Have
The first lead has a curved corner portion on the second lead side, and the semiconductor element is die-bonded by a die bonding agent inside the corner portion, and the side constituting the corner portion and the side Each having a first groove and a second groove between the semiconductor elements,
The semiconductor device, wherein the first groove portion and the second groove portion are separated from each other at the corner portion.   2. The semiconductor device according to claim 1, wherein a portion of the corner portion facing the semiconductor element between the first groove portion and the second groove portion is a curve.   3. The semiconductor device according to claim 1, wherein a side and a side constituting the corner portion are connected by an arc having a center in the semiconductor element mounting region. The second lead has a first wire connection region and a second wire connection region,
The first groove portion is formed between the semiconductor element placement region and the first wire connection region, and the second groove portion is formed between the semiconductor element placement region and the second wire connection region. The semiconductor device according to claim 1.   The first lead includes a third wire connection region to which a conductive wire from the semiconductor element is connected, and a third groove portion that divides the third wire connection region and the semiconductor element placement region. Item 5. The semiconductor device according to any one of Items 1 to 4.   The semiconductor device according to claim 5, wherein the third groove portion protrudes from the semiconductor element mounting region and extends to a position facing the second lead.   The semiconductor device according to claim 1, wherein the first groove portion and the second groove portion are substantially linear.   The semiconductor device according to claim 1, wherein the first groove portion and the second groove portion have a region higher than a reference plane of the first lead around the first groove portion and the second groove portion.

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