JP2011129643A5 - Semiconductor device and manufacturing method thereof - Google Patents

Description

The present invention relates to a method of manufacturing a semi-conductor device and its.

The present invention was made in order to solve these problems, and provide a semiconductor device and its manufacturing method with improved reliability, and an object thereof is to simplify the process.

In one embodiment of the present semiconductor device, the semiconductor chip having an electrode pad, a connection electrode having one end surface connected to the electrode pad via a seed layer, and the other end surface of the connection electrode are exposed. A first insulating layer formed on the chip, a wiring formed on the first insulating layer, connected to the other end surface of the connection electrode, and laminated on the first insulating layer so as to cover the wiring, A second insulating layer exposing a part of the wiring, wherein the first insulating layer and the second insulating layer extend along a side surface of the semiconductor chip, and the first insulating layer and the first insulating layer corners 2 insulating layer is formed to a requirement tapered der Rukoto.
In another form of the semiconductor device, a semiconductor chip having an electrode pad, a connection electrode having one end surface connected to the electrode pad via a seed layer, and the other end surface of the connection electrode are exposed. An insulating layer formed on the semiconductor chip; and an external connection terminal connected to the other end surface of the connection electrode, the insulating layer extending along a side surface of the semiconductor chip, and the insulating layer It is a requirement that the corner formed by the taper has a tapered shape.
In the method of manufacturing the semiconductor device includes providing a semiconductor substrate having a semiconductor chip with electrode pads are more disposed to each of the semiconductor chip on the electrode pad, and the electrode pad end surface via the seed layer Forming a connected connection electrode; forming a semi-cured insulating layer on the semiconductor substrate to expose the other end surface of the connection electrode; and forming the semi-cured insulating layer. The semiconductor substrate is separated into pieces and a plurality of semiconductor chips having the semi-cured insulating layer are formed, and a mold having a tapered portion at a position corresponding to a corner portion of the semiconductor chip is used. the insulating layer of the cured by incorporated turning on a side surface of the semiconductor chip, Engineering and as you form a protective layer in close contact with the side surface of the semiconductor chip made from the insulating layer may be a requirement that has a.

Can provide a semiconductor device and its manufacturing method with increased reliability, also, it is possible to simplify the process.

(B) of FIG. 10 shows details of the U portion of (a). The mold base 103 has clamps 15 and 15 for adjusting the position of the press mold 104 in the horizontal direction (xy direction) and fixing the press molds 104 at positions where the respective press molds 104 are provided. , A position adjusting and fixing means 106 in the vertical direction (z direction) of the press mold 104 and a sliding means 107 that enables the press mold 104 to slide smoothly in the horizontal direction. When the press mold 104 is provided with a taper portion T having an angle θ with respect to the vertical surface M inside the mold (0 degree <θ <90 degrees), and the semi-cured insulating layer or the like is pressed, the insulating layer Can be turned into the side surface of the semiconductor chip. The taper portion T inside the mold has a shape having a rounded surface of a quadrangular pyramid ridge with respect to the rectangular CSP piece.

50 Semiconductor wafer 50b Back surface 51 of semiconductor wafer 50 Connection electrodes 51a, 51b End face 52 of connection electrode 51 Semiconductor integrated circuit 53 Electrode pad 54 Protective film 56, 84 Seed layer 57, 85 Photoresist layer 59, 81 Insulating layer 61 External connection terminal 63 Scribe line 64, 88 Chip size package (CSP)
65 Dicing tape 66 Semiconductor chip 67 Die 68 Corner and side part of insulating layer 69 Protective layer 82 Wiring 86 Second insulating layer 87 Opening 101 for external connection terminal Press device 102 Press means 103 Mold bases 104 and 111 Press mold 105 Press base 106 Vertical position adjustment fixing means 107 of the press mold 104 Sliding means 112 for the press mold 104 Fluororesin
115 Clamp 150 Connection Layer 160 Redistribution Layer 200, 210 Wafer Level Package (WLP)
b Diameters D1, D2, D5, D6 in the perspective view of the external connection terminal 61 Lengths D3, D4, D7, D8 of the bottom side of the semiconductor chip Lengths E1, E2, E3 of the sides of the pressing opening of the die 67 E4, F1, F2, F3, F4 Dimensions of the mold h1 Height of the external connection terminal 61 H1, H2 Height position of the blade M Vertical plane inside the mold p Length of the protective layer t1, t2, t3, t4 Insulating layer thickness T Tapered surface in the mold θ Angle formed by the taper surface T and the vertical surface M in the mold

Claims (10)

A semiconductor chip with electrode pads;
A connection electrode having one end face connected to the electrode pad via a seed layer;
A first insulating layer formed on the semiconductor chip so as to expose the other end surface of the connection electrode;
A wiring formed on the first insulating layer and connected to the other end surface of the connection electrode;
A second insulating layer laminated on the first insulating layer so as to cover the wiring and exposing a part of the wiring;
The semiconductor device, wherein the first insulating layer and the second insulating layer extend along a side surface of the semiconductor chip, and a corner portion formed by the first insulating layer and the second insulating layer is tapered. A protective film exposing the electrode pad is formed on the semiconductor chip,
The semiconductor device according to claim 1, wherein the first insulating layer is formed on an upper surface of the protective film and extends to a side surface of the semiconductor chip to cover the side surface of the protective film. A semiconductor chip with electrode pads;
A connection electrode having one end face connected to the electrode pad via a seed layer;
An insulating layer formed on the semiconductor chip so as to expose the other end surface of the connection electrode;
An external connection terminal connected to the other end surface of the connection electrode,
The semiconductor device, wherein the insulating layer extends along a side surface of the semiconductor chip, and a corner portion formed by the insulating layer is tapered. A protective film exposing the electrode pad is formed on the semiconductor chip,
The semiconductor device according to claim 3, wherein the insulating layer is formed on an upper surface of the protective film and extends to a side surface of the semiconductor chip to cover the side surface of the protective film. A step of semiconductor chips having electrode pads prepares a plurality arranged semiconductor substrate, to each of the semiconductor chip on the electrode pad to form the connection electrode having an end surface is connected to the electrode pad through the seed layer ,
Forming a semi-cured insulating layer on the semiconductor substrate so as to expose the other end surface of the connection electrode;
Separating the semiconductor substrate on which the semi-cured insulating layer is formed, and forming a plurality of semiconductor chips having the semi-cured insulating layer;
Using a mold having a tapered portion at a position corresponding to the corner portion of the semiconductor chip, the semi-cured insulating layer is turned into the side surface of the semiconductor chip, and the side surface of the semiconductor chip is made of the insulating layer. method of manufacturing a semiconductor device having a factory as a, that to form a protective layer in close contact with the. After the step of forming the insulating layer, a step of forming a wiring connected to the connection electrode on the insulating layer, and forming a semi-cured second insulating layer on the insulating layer so as to cover the wiring And having a process
In the step of forming the protective layer, the semi-cured insulating layer and the semi-cured second insulating layer are formed on the semiconductor using a mold having a tapered portion at a position corresponding to a corner of the semiconductor chip. 6. The method of manufacturing a semiconductor device according to claim 5 , wherein a protective layer formed of the insulating layer and the second insulating layer and being in close contact with the side surface of the semiconductor chip is formed around the side surface of the chip . 6. The method of curing the semi-cured insulating layer after the step of forming the protective layer, or curing the semi-cured insulating layer and the semi-cured second insulating layer. Or the manufacturing method of the semiconductor device of 6. Surface in contact with the semiconductor chip of the tapered portion is 0 degree than to the mold inside the vertical plane, any one of 請 Motomeko 5-7 that having a tapered surface at an angle less than 90 degrees The manufacturing method of the semiconductor device of description. The method for manufacturing a semiconductor device according to claim 5 , wherein a material of the mold is stainless steel. The surface in contact with the semiconductor chip of the tapered portion, a method of manufacturing a semiconductor device according to one of 請 Motomeko 5-9 that have been coated with a fluorine resin.

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