JP2011119723A - Sensor package - Google Patents

Sensor package Download PDF

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Publication number
JP2011119723A
JP2011119723A JP2010260623A JP2010260623A JP2011119723A JP 2011119723 A JP2011119723 A JP 2011119723A JP 2010260623 A JP2010260623 A JP 2010260623A JP 2010260623 A JP2010260623 A JP 2010260623A JP 2011119723 A JP2011119723 A JP 2011119723A
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Prior art keywords
sensor element
sensor
box
shaped substrate
sensor package
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Yoshiharu Sanagawa
佳治 佐名川
Toshihiko Takahata
利彦 高畑
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Panasonic Electric Works Co Ltd
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Panasonic Electric Works Co Ltd
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Priority to JP2010260623A priority Critical patent/JP2011119723A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sensor package that is made compact, and has superior sensor characteristics and stably maintains the characteristics. <P>SOLUTION: The sensor package 1 includes a sensor element 11, a box-shaped substrate 12 having a bottom surface and four circumferential side faces to mount the sensor element 11 therein, and an integrated circuit chip 13 which processes an electric signal from the sensor element 11 mounted inside the box-shaped substrate 12. The integrated circuit chip 13 is mounted in the box-shaped substrate 12 so as to cover an upper opening of the box-shaped substrate 12. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、センサ素子を実装してモジュール化したセンサパッケージに関する。   The present invention relates to a sensor package in which sensor elements are mounted and modularized.

従来から、半導体の微細加工技術を応用したセンサ素子（半導体センサ）を実装基板に実装してモジュール化したセンサパッケージがあり、加速度センサや圧力センサなどとして用いられている。図１１を参照して、従来のセンサパッケージの例を説明する。このセンサパッケージは、例えば、加速度検出用のものである。これは、厚み方向に変位する重錘体（不図示）が形成されたセンサ素子９１、及び、センサ素子９１からの信号を受け取って処理する集積回路チップ９２を、それぞれ実装基板９３の凹部底面に実装し、凹部開口を板状封止部材９４で封止して形成されている。センサ素子９１、集積回路チップ９２、及び実装基板９３の間はボンディングワイヤＷを用いて電気的に接続されている。   Conventionally, there is a sensor package in which a sensor element (semiconductor sensor) to which a semiconductor microfabrication technology is applied is mounted on a mounting substrate, and is used as an acceleration sensor or a pressure sensor. An example of a conventional sensor package will be described with reference to FIG. This sensor package is for acceleration detection, for example. This is because the sensor element 91 formed with a weight body (not shown) that is displaced in the thickness direction, and the integrated circuit chip 92 that receives and processes a signal from the sensor element 91 are respectively provided on the bottom surface of the recess of the mounting substrate 93. It is formed by mounting and sealing the recess opening with a plate-shaped sealing member 94. The sensor element 91, the integrated circuit chip 92, and the mounting substrate 93 are electrically connected using bonding wires W.

一般に、これらのセンサパッケージにおいて、小型化、低コスト化、優れたセンサ特性と安定した特性の維持などが求められる。そこで、例えば、パッケージの底面が小さくなるようにセンサ素子と信号処理用の集積回路チップをハウジング（立体基板）内で上下に配置し、立体基板にワイヤボンディングにより実装して小型化を図る圧力センサが知られている（例えば、特許文献１参照）。   In general, these sensor packages are required to be small in size, low in cost, maintain excellent sensor characteristics and stable characteristics, and the like. For this reason, for example, a pressure sensor for reducing the size by arranging sensor elements and signal processing integrated circuit chips vertically in a housing (three-dimensional board) so as to reduce the bottom surface of the package and mounting the three-dimensional board by wire bonding. Is known (see, for example, Patent Document 1).

特開２００３−１３０７４９号公報JP 2003-130749 A

しかしながら、上述した特許文献１に示されるようなセンサパッケージにおいては、集積回路チップがワイヤボンディングにより実装されるので、集積回路チップの外形にワイヤボンディングに必要な領域を加えた面積が最小面積となる。従って、センサパッケージをこれよりも小さくできないという問題がある。   However, in the sensor package as shown in Patent Document 1 described above, since the integrated circuit chip is mounted by wire bonding, the area obtained by adding a region necessary for wire bonding to the outer shape of the integrated circuit chip is the minimum area. . Therefore, there is a problem that the sensor package cannot be made smaller than this.

本発明は、上記課題を解消するものであって、小型化と共に、優れたセンサ特性と安定した特性維持を実現できるセンサパッケージを提供することを目的とする。   SUMMARY OF THE INVENTION The present invention solves the above-described problems, and an object thereof is to provide a sensor package capable of realizing excellent sensor characteristics and stable characteristic maintenance as well as downsizing.

上記課題を達成するために、本発明のセンサパッケージは、底面及び四周側面を備えてなる箱状基板と、箱状基板内部に実装したセンサ素子と、センサ素子からの電気信号を処理する集積回路チップと、を備えたセンサパッケージであって、集積回路チップは、箱状基板の上部開口を覆うように箱状基板に実装してなることを特徴とする。   In order to achieve the above object, a sensor package according to the present invention includes a box-shaped substrate having a bottom surface and a four-side surface, a sensor element mounted inside the box-shaped substrate, and an integrated circuit that processes an electrical signal from the sensor element. The integrated circuit chip is mounted on the box-shaped substrate so as to cover the upper opening of the box-shaped substrate.

このセンサパッケージにおいて、センサ素子を線状又は点状に配置した支持部により支持してセンサ素子が自由端を有する状態で箱状基板に実装することが好ましい。   In this sensor package, the sensor element is preferably mounted on the box-shaped substrate in a state where the sensor element has a free end supported by a support portion arranged linearly or in a dot shape.

このセンサパッケージにおいて、センサ素子の自由端の部分を低弾性部材で支えるようにすることが好ましい。   In this sensor package, it is preferable that the free end portion of the sensor element is supported by a low elastic member.

また、センサパッケージにおいて、センサ素子の自由端の部分をスペーサで支えるようにしてもよい。   In the sensor package, the free end portion of the sensor element may be supported by a spacer.

このセンサパッケージにおいて、スペーサをセンサ素子の実装に際して所定の高さに変形可能な部材で構成することが好ましい。   In this sensor package, the spacer is preferably made of a member that can be deformed to a predetermined height when the sensor element is mounted.

本発明のセンサパッケージによれば、箱状基板内部にセンサ素子を実装し、集積回路チップをスタック構造に実装するので、センサパッケージの小型化が可能となる。また、箱状基板をその内部及び／又は表面に配線が形成されたいわゆる立体回路基板とすることにより、この箱状基板と集積回路チップをバンプによって相互に電気接続でき、ワイヤボンディングによる電気接続に比してセンサパッケージを小型化できる。また、本発明によれば、箱状基板の上面全体を覆う場合に比して集積回路チップを小型化できるので、集積回路チップを低コスト化ができる。
According to the sensor package of the present invention, the sensor element is mounted inside the box-shaped substrate, and the integrated circuit chip is mounted in the stack structure. Therefore, the sensor package can be reduced in size. Also, by making the box-shaped substrate a so-called three-dimensional circuit substrate having wiring formed therein and / or on the surface thereof, the box-shaped substrate and the integrated circuit chip can be electrically connected to each other by bumps, and can be electrically connected by wire bonding. In comparison, the sensor package can be reduced in size. Further, according to the present invention, the integrated circuit chip can be reduced in size as compared with the case where the entire upper surface of the box-shaped substrate is covered, so that the cost of the integrated circuit chip can be reduced.

（ａ）は本発明の前提となる第１形態に係るセンサパッケージの分解斜視図、（ｂ）は同センサパッケージの回路基板を外した状態の斜視図、（ｃ）は同センサパッケージの斜視図。(A) is an exploded perspective view of the sensor package according to the first embodiment as a premise of the present invention, (b) is a perspective view of the sensor package with a circuit board removed, and (c) is a perspective view of the sensor package. . 同上センサパッケージの断面図。Sectional drawing of a sensor package same as the above. 本発明の前提となる第２形態に係るセンサパッケージの断面図。Sectional drawing of the sensor package which concerns on the 2nd form used as the premise of this invention. （ａ）は本発明の第１の実施形態に係るセンサパッケージの分解斜視図、（ｂ）は同センサパッケージの斜視図。(A) is a disassembled perspective view of the sensor package based on the 1st Embodiment of this invention, (b) is a perspective view of the sensor package. （ａ）は図４（ｂ）におけるＡ−Ａ線断面図、（ｂ）は図４（ｂ）におけるＢ−Ｂ線断面図。(A) is the sectional view on the AA line in FIG.4 (b), (b) is the sectional view on the BB line in FIG.4 (b). 本発明の前提となる第３形態に係るセンサパッケージの断面図。Sectional drawing of the sensor package which concerns on the 3rd form used as the premise of this invention. 本発明の第２の実施形態に係るセンサパッケージの断面図。Sectional drawing of the sensor package which concerns on the 2nd Embodiment of this invention. （ａ）〜（ｆ）は同上第２の実施形態に係るセンサパッケージにおけるセンサ素子の実装方法の違いによる変形例を模式的に説明するセンサ素子の下面平面図。(A)-(f) is a bottom view of a sensor element for schematically explaining a modification example due to a difference in mounting method of the sensor element in the sensor package according to the second embodiment. （ａ）は本発明の第３の実施形態に係るセンサパッケージの断面図、（ｂ）は同センサパッケージのセンサ素子の実装状態を模式的に説明するセンサ素子の下面平面図。(A) is sectional drawing of the sensor package which concerns on the 3rd Embodiment of this invention, (b) is the bottom view of the sensor element which illustrates the mounting state of the sensor element of the sensor package typically. （ａ）は本発明の第４の実施形態に係るセンサパッケージの断面図、（ｂ）は同センサパッケージのセンサ素子の実装状態を模式的に説明するセンサ素子の下面平面図。(A) is sectional drawing of the sensor package which concerns on the 4th Embodiment of this invention, (b) is the bottom view of the sensor element which illustrates typically the mounting state of the sensor element of the sensor package. 従来のセンサパッケージの断面図。Sectional drawing of the conventional sensor package.

以下、本発明の実施形態に係るセンサパッケージについて、図面を参照して説明する。   Hereinafter, a sensor package according to an embodiment of the present invention will be described with reference to the drawings.

（前提となる第１形態）
図１（ａ）（ｂ）（ｃ）、図２は、本発明の前提となる第１形態に係るセンサパッケージ１を示す。センサパッケージ１は、センサ素子１１と、センサ素子１１を内部に実装するように底面及び四周側面を備えてなる箱状基板１２と、箱状基板１２内部に実装したセンサ素子１１からの信号を受ける集積回路チップ１３と、を備えている。集積回路チップ１３は、箱状基板１２の上部開口を覆うように箱状基板１２に実装されている。 (First form as a premise)
FIGS. 1A, 1B, 1C, and 2 show a sensor package 1 according to a first embodiment as a premise of the present invention. The sensor package 1 receives a sensor element 11, a box-shaped substrate 12 having a bottom surface and a four-side surface so that the sensor element 11 is mounted inside, and a signal from the sensor element 11 mounted inside the box-shaped substrate 12. Integrated circuit chip 13. The integrated circuit chip 13 is mounted on the box-shaped substrate 12 so as to cover the upper opening of the box-shaped substrate 12.

センサ素子１１は、例えば、シリコン基板をＭＥＭＳ（Ｍｉｃｒｏ Ｅｌｅｃｔｒｏ Ｍｅｃｈａｎｉｃａｌ Ｓｙｓｔｅｍ）技術を用いて微細加工して形成される。そして、センサ素子１１は、例えば、内部に重錘体を備えることにより、重錘体に作用する慣性力による重錘体の変位を静電容量や電気抵抗の変化により電気的に検出して、加速度を検出する加速度センサとすることができる。センサ素子１１は、バンプ２１を備えており、バンプ２１を用いて箱状基板１２の底面にフリップ実装されている。センサ素子１１の実装には、ＮＣＰ（Ｎｏｎ Ｃｏｎｄｕｃｔｉｖｅ Ｐａｓｔｅ）法、Ａｕ／Ａｕ接合、接合後の樹脂後入れ（アンダーフィル）などの方法を用いることができる。   For example, the sensor element 11 is formed by finely processing a silicon substrate using a MEMS (Micro Electro Mechanical System) technique. The sensor element 11 includes, for example, a weight body therein, and electrically detects displacement of the weight body due to inertial force acting on the weight body by a change in capacitance or electric resistance. It can be set as the acceleration sensor which detects an acceleration. The sensor element 11 includes a bump 21, and is flip-mounted on the bottom surface of the box-shaped substrate 12 using the bump 21. For mounting the sensor element 11, methods such as NCP (Non Conductive Paste) method, Au / Au bonding, and resin post-bonding (underfill) after bonding can be used.

箱状基板１２は、例えば、その表面や必要に応じて内部に配線を有する立体回路基板であり、例えば、シリコン、セラミックス、樹脂等で形成される。樹脂製の場合、特にＭＩＤ（Ｍｏｌｄｅｄ Ｉｎｔｅｒｃｏｎｎｅｃｔ Ｄｅｖｉｃｅ）基板が好適に用いられる。また、一般的な基板材料であるＦＲ−４からなる有機基板を用いても形成される。図２に示す箱状基板１２は、その表面に配線パターン１２ａを備えている。配線パターン１２ａは、箱内底面においてバンプ２１を介してセンサ素子１１と電気接続され、センサ素子１１からの電気信号は、箱内側壁を経由して箱状基板１２の上面において、バンプ２２を介して集積回路チップ１３に授受される。また、集積回路チップ１３の入出力は、箱状基板１２の外部側壁から外部底面に至る配線パターン１２ａによって、センサパッケージ１の外部へと接続される。すなわち、センサパッケージ１は、箱状基板１２の外部底面における配線パターン１２ａによって、はんだ等を用いて、外部の実装基板に実装される。   The box-shaped substrate 12 is, for example, a three-dimensional circuit substrate having wiring on the surface thereof and if necessary, and is formed of, for example, silicon, ceramics, resin, or the like. In the case of resin, an MID (Molded Interconnect Device) substrate is particularly preferably used. Further, it can be formed using an organic substrate made of FR-4 which is a general substrate material. The box-shaped substrate 12 shown in FIG. 2 has a wiring pattern 12a on its surface. The wiring pattern 12a is electrically connected to the sensor element 11 via the bump 21 on the bottom surface in the box, and an electric signal from the sensor element 11 passes through the bump 22 on the top surface of the box-shaped substrate 12 via the inner wall of the box. Are transferred to the integrated circuit chip 13. The input / output of the integrated circuit chip 13 is connected to the outside of the sensor package 1 by a wiring pattern 12 a extending from the outer side wall of the box-shaped substrate 12 to the outer bottom surface. That is, the sensor package 1 is mounted on an external mounting substrate using solder or the like by the wiring pattern 12a on the external bottom surface of the box-shaped substrate 12.

集積回路チップ１３は、シリコン基板の表面に半導体集積回路を形成したチップであり、その外形は、箱状基板１２の外形と略同一となっている。集積回路チップ１３は、上述したように、バンプ２２を介して、箱状基板１２にフリップチップ接合されている。バンプ２２は、例えば、Ａｕバンプであり、箱状基板１２の電極（不図示）に、超音波接合、熱圧着接合、常温表面活性化接合等の方法を用いて接合される。   The integrated circuit chip 13 is a chip in which a semiconductor integrated circuit is formed on the surface of a silicon substrate, and its outer shape is substantially the same as the outer shape of the box-shaped substrate 12. As described above, the integrated circuit chip 13 is flip-chip bonded to the box-shaped substrate 12 via the bumps 22. The bump 22 is, for example, an Au bump, and is bonded to an electrode (not shown) of the box-shaped substrate 12 using a method such as ultrasonic bonding, thermocompression bonding, or room temperature surface activation bonding.

上述の構成によれば、箱状基板１２内部にセンサ素子１１を実装し、集積回路チップ１３をスタック構造に実装するので、センサパッケージ１の小型化が実現される。また、箱状基板１２を、立体回路基板とし、この箱状基板１２と集積回路チップ１３とをバンプ２２によって相互に電気接続できるので、ワイヤボンディングによる電気接続に比してセンサパッケージ１を小型化できる。   According to the above configuration, since the sensor element 11 is mounted inside the box-shaped substrate 12 and the integrated circuit chip 13 is mounted in a stack structure, the sensor package 1 can be reduced in size. Further, since the box-shaped substrate 12 is a three-dimensional circuit substrate and the box-shaped substrate 12 and the integrated circuit chip 13 can be electrically connected to each other by the bumps 22, the sensor package 1 can be downsized as compared with the electric connection by wire bonding. it can.

（前提となる第２形態）
図３は、本発明の前提となる第２形態に係るセンサパッケージ１を示す。このセンサパッケージ１は、センサ素子１１を、バンプではなくボンディングワイヤＷを用いて、箱状基板１２の底面にワイヤボンディング実装している点が、上述の第１形態と異なり、他の点は第１形態と同様である。ワイヤボンディング実装では、ボンディングパッド用の面積が箱状基板１２の内部底面に必要であり、バンプを用いる実装の場合よりも、センサパッケージが大きくなる。しかしながら、実績のあるワイヤボンディングによれば容易確実に実装できる。 (Assumption 2nd form)
FIG. 3 shows a sensor package 1 according to a second embodiment as a premise of the present invention. This sensor package 1 differs from the first embodiment described above in that the sensor element 11 is wire-bonded and mounted on the bottom surface of the box-shaped substrate 12 using bonding wires W instead of bumps. It is the same as that of 1 form. In wire bonding mounting, an area for bonding pads is required on the inner bottom surface of the box-shaped substrate 12, and the sensor package becomes larger than in the case of mounting using bumps. However, the proven wire bonding can be easily and reliably mounted.

（第１の実施形態）
図４（ａ）（ｂ）、図５（ａ）（ｂ）は、本発明の第１の実施形態に係るセンサパッケージ１を示す。このセンサパッケージ１は、箱状基板１２の上部開口を形成する四周側面１２ｂ，１２ｂ，１２ｃ，１２ｃのうち、対向する側面からなる一対の側面１２ｃ，１２ｃを他の一対の側面１２ｂ，１２ｂよりも落とし込ませている。そして、センサパッケージ１は、その落とし込んだ側面の上面間に集積回路チップ１３を橋渡しして実装している。その他の点は、上述の第１形態におけるセンサパッケージ１と同様である。従って、この集積回路チップ１３は、上述の第１形態における集積回路チップ１３のように箱状基板１２の上面開口を全面で覆う場合よりも、小さくなっている。つまり、集積回路チップ１３は、箱状基板１２の底面積よりも小さくなっているので、集積回路チップ１３の低コスト化が図れることになる。 (First embodiment)
4 (a), 4 (b), 5 (a) and 5 (b) show the sensor package 1 according to the first embodiment of the present invention. This sensor package 1 has a pair of side surfaces 12c and 12c, which are formed of opposing side surfaces among the four circumferential side surfaces 12b, 12b, 12c, and 12c that form the upper opening of the box-shaped substrate 12, more than other pair of side surfaces 12b and 12b. I have been dropped. The sensor package 1 is mounted by bridging the integrated circuit chip 13 between the top surfaces of the dropped side surfaces. Other points are the same as those of the sensor package 1 in the first embodiment. Accordingly, the integrated circuit chip 13 is smaller than the case where the upper surface opening of the box-shaped substrate 12 is entirely covered like the integrated circuit chip 13 in the first embodiment. That is, since the integrated circuit chip 13 is smaller than the bottom area of the box-shaped substrate 12, the cost of the integrated circuit chip 13 can be reduced.

（前提となる第３形態）
図６は本発明の前提となる第３形態に係るセンサパッケージ１を示す。このセンサパッケージ１は、図２に示した第１形態におけるセンサパッケージ１において、集積回路チップ１３と箱状基板１２との間に、封止材３１を注入して箱状基板１２内部を密閉状態としたものである。封止材３１としては、例えば、エポキシ樹脂からなる絶縁材料を用いることができる。密閉封止は、集積回路チップ１３を実装するときに、全周に封止樹脂を塗布して行う。 (Third form as a premise)
FIG. 6 shows a sensor package 1 according to a third embodiment as a premise of the present invention. In the sensor package 1 in the first embodiment shown in FIG. 2, the sealing material 31 is injected between the integrated circuit chip 13 and the box-shaped substrate 12 to seal the inside of the box-shaped substrate 12. It is what. As the sealing material 31, for example, an insulating material made of an epoxy resin can be used. The hermetic sealing is performed by applying a sealing resin to the entire periphery when the integrated circuit chip 13 is mounted.

また、この密閉封止を、所定ガス（ドライエアー、窒素、アルゴンガスなど）の雰囲気中で行うことにより、箱状基板１２の内部にこれらのガスを封入することができる。なお、封止材３１は、バンプ２２に対するアンダーフィルとしても機能し、これにより、接合信頼性の向上を図ることもできる。このようなセンサパッケージ１においては、センサ素子１１が外部環境の影響を受けにくくなるので、センサ素子１１を好条件で保持し、優れたセンサ特性と安定した特性を維持できる。   Further, by performing this hermetic sealing in an atmosphere of a predetermined gas (dry air, nitrogen, argon gas, etc.), these gases can be sealed inside the box-shaped substrate 12. Note that the sealing material 31 also functions as an underfill for the bumps 22, thereby improving the bonding reliability. In such a sensor package 1, the sensor element 11 is less susceptible to the influence of the external environment. Therefore, the sensor element 11 can be held under favorable conditions, and excellent sensor characteristics and stable characteristics can be maintained.

（第２の実施形態）
図７は、本発明の第２の実施形態に係るセンサパッケージ１を示し、図８（ａ）〜（ｆ）は、第２の実施形態に係る種々の変形例をセンサ素子１１の実装状態によって示す。このセンサパッケージ１は、上述の第１の実施形態において、センサ素子１１を片持ち状態で箱状基板１２に実装したものであり、この他の点は第１の実施形態において示したものと同様である。すなわち、このセンサパッケージ１では、センサ素子１１を実装するバンプ２１が、センサ素子１１の底面内で局在している。また、バンプ２１の周辺には、やはり局所的にアンダーフィル用の、例えば、樹脂からなる接着部材３２が充填されている。従って、センサ素子１１は、局在したバンプ２１と接着部材３２とによって箱状基板１２の底面に接合された部分が固定端となり、他の部分が自由端となっている。 (Second Embodiment)
FIG. 7 shows a sensor package 1 according to the second embodiment of the present invention, and FIGS. 8A to 8F show various modifications according to the second embodiment depending on the mounting state of the sensor element 11. Show. The sensor package 1 is obtained by mounting the sensor element 11 on the box-like substrate 12 in a cantilever state in the first embodiment described above, and the other points are the same as those shown in the first embodiment. It is. That is, in the sensor package 1, the bumps 21 for mounting the sensor element 11 are localized in the bottom surface of the sensor element 11. Further, the periphery of the bump 21 is also filled with an adhesive member 32 made of, for example, resin for locally underfilling. Accordingly, the sensor element 11 has a fixed end at a portion bonded to the bottom surface of the box-shaped substrate 12 by the localized bump 21 and the adhesive member 32 and a free end at the other portion.

センサ素子１１を自由端を備えた状態で支持する方法としては、図８（ａ）〜（ｃ）に示すように、センサ素子１１の底面内のバンプ位置２１ａを線状として支持すると共に、そのまわりに接着部材位置３２ａを配置する方法を用いることができる。また、図８（ｄ）〜（ｆ）に示すように、センサ素子１１の底面内のバンプ位置２１ａを一ヶ所に集めて支持すると共に、そのまわりに接着部材位置３２ａを配置する方法などを用いることができる。これらの何れの場合においても、センサ素子１１は、線状又は点状に配置した支持部により、自由端を有するように、支持され、その支持部は、複数のバンプを集めて形成されている。   As a method of supporting the sensor element 11 with a free end, as shown in FIGS. 8A to 8C, the bump position 21a in the bottom surface of the sensor element 11 is supported as a line, A method of arranging the adhesive member position 32a around can be used. Further, as shown in FIGS. 8D to 8F, a method of collecting and supporting the bump positions 21a in the bottom surface of the sensor element 11 at one place and arranging the adhesive member position 32a around the bump positions 21a is used. be able to. In any of these cases, the sensor element 11 is supported so as to have a free end by a support portion arranged linearly or in a dot shape, and the support portion is formed by collecting a plurality of bumps. .

このような構造のセンサパッケージ１は、センサ素子１１が線状又は点状に配置した支持部により支持され、センサ素子１１が自由端を有する状態で実装されている。従って、この構造を備えることにより、箱状基板１２とセンサ素子１１の線膨張率の差によって発生する箱状基板１２からセンサ素子１１への熱応力の影響を緩和できる。また、同様に、実装時や使用時に発生する箱状基板１２の内外温度差によるセンサ素子１１への熱応力の影響を緩和できる。センサ素子の自由端が、このような線膨張率差や温度変化によるセンサ素子１１への応力負荷を低減し、センサ素子１１が好条件で保持され、その優れたセンサ特性と安定した特性が維持される。   The sensor package 1 having such a structure is supported by a support portion in which the sensor element 11 is arranged in a linear or dot shape, and the sensor element 11 is mounted in a state having a free end. Therefore, by providing this structure, the influence of thermal stress on the sensor element 11 from the box-shaped substrate 12 generated by the difference in linear expansion coefficient between the box-shaped substrate 12 and the sensor element 11 can be reduced. Similarly, the influence of thermal stress on the sensor element 11 due to the temperature difference between the inside and outside of the box-like substrate 12 that occurs during mounting or use can be mitigated. The free end of the sensor element reduces the stress load on the sensor element 11 due to such a difference in linear expansion coefficient and temperature change, and the sensor element 11 is maintained under favorable conditions, maintaining its excellent sensor characteristics and stable characteristics. Is done.

（第３の実施形態）
図９（ａ）（ｂ）は本発明の第３の実施形態に係るセンサパッケージ１とセンサ素子１１の実装状態を示す。このセンサパッケージ１は、センサ素子１１を片持ち状態で実装すると共に、より安定に支持できるように、センサ素子１１の片持ち以外の部分を低弾性部材３３により、支えるものである。この図の例では、センサ素子１１の底面内で、バンプ位置２１ａと接着部材位置３２ａを１辺に沿った線状配置とし、低弾性部材位置３３ａを、センサ素子１１の底面内の他の３辺に沿った配置としている。 (Third embodiment)
9A and 9B show the mounting state of the sensor package 1 and the sensor element 11 according to the third embodiment of the present invention. In the sensor package 1, the sensor element 11 is mounted in a cantilever state, and a portion other than the cantilever of the sensor element 11 is supported by a low elastic member 33 so that the sensor element 11 can be supported more stably. In the example of this figure, the bump position 21 a and the adhesive member position 32 a are linearly arranged along one side within the bottom surface of the sensor element 11, and the low elastic member position 33 a is the other three in the bottom surface of the sensor element 11. It is arranged along the side.

このセンサパッケージ１は、センサ素子１１の自由端の温度変化に基づく伸縮が可能な状態で、上下方向の振動や傾きなどを抑制できるので、センサ素子１１の性能を維持し、かつ劣化を防止できる。   Since the sensor package 1 can be expanded and contracted based on the temperature change of the free end of the sensor element 11 and can suppress vibrations and tilts in the vertical direction, the performance of the sensor element 11 can be maintained and deterioration can be prevented. .

（第４の実施形態）
図１０（ａ）（ｂ）は本発明の第４の実施形態に係るセンサパッケージ１とセンサ素子１１の実装状態を示す。このセンサパッケージ１は、センサ素子１１の片持ち以外の部分をスペーサ２３で支えるようにしたものである。センサ素子１１の底面内で、バンプ位置２１ａにおけるバンプ２１と、バンプ位置２１ａから離れた２点のスペーサ位置２３ａにおけるスペーサ２３の、少なくとも３点により平面が決定され、センサ素子１１はこの平面内で安定して伸縮可能となる。スペーサ２３は箱状基板１２の底面に固定されている。 (Fourth embodiment)
10A and 10B show the mounting state of the sensor package 1 and the sensor element 11 according to the fourth embodiment of the present invention. In this sensor package 1, a part other than the cantilever of the sensor element 11 is supported by a spacer 23. Within the bottom surface of the sensor element 11, the plane is determined by at least three points of the bump 21 at the bump position 21 a and the spacer 23 at the two spacer positions 23 a far from the bump position 21 a, and the sensor element 11 is within this plane. It can be expanded and contracted stably. The spacer 23 is fixed to the bottom surface of the box-shaped substrate 12.

このセンサパッケージ１は、センサ素子１１の自由端の温度変化に基づく伸縮が可能な状態で振動変位などを抑制できる。センサパッケージ１は、さらに剛性を有するスペーサを複数、あるいは広い範囲で用いることにより、センサ素子の傾きをより確実に防止でき、センサ素子１１の性能を維持し、かつ劣化を防止できる。   This sensor package 1 can suppress vibration displacement and the like in a state in which expansion and contraction based on a temperature change at the free end of the sensor element 11 is possible. The sensor package 1 can prevent the tilt of the sensor element more reliably, maintain the performance of the sensor element 11, and prevent the deterioration by using a plurality of spacers having rigidity or in a wide range.

また、上述のセンサパッケージ１において、スペーサ２３をセンサ素子１１の実装に際して所定の高さに変形可能な部材で構成して箱状基板１２の底面に備えることができる。これにより、センサ素子１１を実装する際に、スペーサ２３に所定の押圧力を加えることによってスペーサ２３の高さならしが可能となるので、スペーサ２３の精密な高さ管理が不要となり、実装作業効率が上がる。また、センサ素子１１の傾きや劣化を回避でき、優れた特性のセンサパッケージ１が得られる。   In the sensor package 1 described above, the spacer 23 can be formed of a member that can be deformed to a predetermined height when the sensor element 11 is mounted, and can be provided on the bottom surface of the box-shaped substrate 12. As a result, when the sensor element 11 is mounted, the spacer 23 can be leveled by applying a predetermined pressing force to the spacer 23. Therefore, precise height management of the spacer 23 becomes unnecessary, and the mounting work Increases efficiency. Further, it is possible to avoid the inclination and deterioration of the sensor element 11, and the sensor package 1 having excellent characteristics can be obtained.

なお、本発明は、上記構成に限られることなく種々の変形が可能である。箱状基板１２の外形は正方形とは限らなく、例えば、長方形であってもよい。また、バンプ２１，２２は箱状基板１２に形成するようにしてもよい。箱状基板１２にバンプを設ける場合は、箱状基板１２としてのＭＩＤ基板における一体成形された突起を用いる、いわゆる成形バンプの方法を用いることができる。   The present invention is not limited to the above-described configuration, and various modifications can be made. The outer shape of the box-shaped substrate 12 is not limited to a square, and may be a rectangle, for example. The bumps 21 and 22 may be formed on the box-shaped substrate 12. In the case where bumps are provided on the box-shaped substrate 12, a so-called molded bump method using an integrally formed protrusion on the MID substrate as the box-shaped substrate 12 can be used.

１ センサパッケージ
１１ センサ素子
１２ 箱状基板
１３ 集積回路チップ
２３ スペーサ
３１ 封止材
３３ 低弾性部材
１２ａ 上部開口
１２ｂ，１２ｃ 側面 DESCRIPTION OF SYMBOLS 1 Sensor package 11 Sensor element 12 Box-shaped board | substrate 13 Integrated circuit chip 23 Spacer 31 Sealing material 33 Low elastic member 12a Upper opening 12b, 12c Side

Claims (5)

底面及び四周側面を備えてなる箱状基板と、
前記箱状基板内部に実装したセンサ素子と、
前記センサ素子からの電気信号を処理する集積回路チップと、を備えたセンサパッケージであって、
前記集積回路チップは、前記箱状基板の上部開口を形成する四周側面のうち、対向する側面からなる一対の側面を他の一対の側面よりも落とし込み、その落とし込んだ側面の上面間に橋渡しして前記上部開口を覆うように当該箱状基板に実装してなることを特徴とするセンサパッケージ。 A box-shaped substrate having a bottom surface and four side surfaces;
A sensor element mounted inside the box-shaped substrate;
An integrated circuit chip for processing an electrical signal from the sensor element, and a sensor package comprising:
The integrated circuit chip is formed by dropping a pair of opposite side surfaces from the other pair of side surfaces among the four circumferential side surfaces forming the upper opening of the box-shaped substrate, and bridging between the upper surfaces of the dropped side surfaces. A sensor package which is mounted on the box-shaped substrate so as to cover the upper opening. 前記センサ素子を線状又は点状に配置した支持部により支持して当該センサ素子が自由端を有する状態で前記箱状基板に実装したことを特徴とする請求項１に記載のセンサパッケージ。   2. The sensor package according to claim 1, wherein the sensor element is mounted on the box-shaped substrate in a state where the sensor element is supported by a support portion arranged linearly or in a dot shape and the sensor element has a free end. 前記センサ素子の自由端の部分を低弾性部材で支えるようにしたことを特徴とする請求項２に記載のセンサパッケージ。   3. The sensor package according to claim 2, wherein a free end portion of the sensor element is supported by a low elastic member. 前記センサ素子の自由端の部分をスペーサで支えるようにしたことを特徴とする請求項２に記載のセンサパッケージ。   The sensor package according to claim 2, wherein a free end portion of the sensor element is supported by a spacer. 前記スペーサを前記センサ素子の実装に際して所定の高さに変形可能な部材で構成したことを特徴とする請求項４に記載のセンサパッケージ。   The sensor package according to claim 4, wherein the spacer is formed of a member that can be deformed to a predetermined height when the sensor element is mounted.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010089209A (en) * 2008-10-08 2010-04-22 Fujitsu Ltd Micro movable element and optical switching device
JP2010089233A (en) * 2008-10-10 2010-04-22 Fujitsu Ltd Micro movable element and optical switching device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010089209A (en) * 2008-10-08 2010-04-22 Fujitsu Ltd Micro movable element and optical switching device
JP2010089233A (en) * 2008-10-10 2010-04-22 Fujitsu Ltd Micro movable element and optical switching device

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