JP2011114006A - Light emitting device and projector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device for aligning a light emitting element and a reflection surface for reflecting emission light with high accuracy. <P>SOLUTION: The light emitting device 1000 includes a base 140 in which a groove section 142 is formed, a submount 150 supported by the base 140 and at least partially embedded in the groove section 142, a light emitting element 100 supported by the submount 150 to emit first emission light L1 and second emission light L2 mutually traveling in opposite directions, a first reflection surface 172 for reflecting the first emission light L1, and a second reflection surface 174 for reflecting the second emission light L2. The first reflection surface 172 is formed on a first surface 144 of the base 140 tilting to a traveling direction of the first emission light L1, and the second reflection surface 174 is formed on a second surface 146 of the base 140 tilting to a traveling direction of the second emission light L2. First reflection light L3 reflected by the first reflection surface 172 and second reflection light L4 reflected by the second reflection surface 174 travel in the same direction. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a light emitting device and a projector.

  In the case of a light emitting element that emits light from both end faces of a chip, for example, the light from both ends may be flipped up by a mirror in order to direct it in the same direction. As an example of changing the direction of light using such a flip-up mirror, for example, as disclosed in Patent Document 1, there is an optical communication module capable of transmitting and receiving using a light emitting and receiving element such as an optical fiber. In the technique disclosed in Patent Document 1, a flip-up mirror is separately installed on a support substrate.

JP 2001-7353 A

  One of the objects according to some aspects of the present invention is to provide a light emitting device capable of highly accurately aligning a light emitting element and a reflecting surface that reflects outgoing light. Another object of some embodiments of the present invention is to provide a projector having the light-emitting device.

The light emitting device according to the present invention is
A base formed with a groove,
A submount supported by the base and at least partially embedded in the groove;
A light emitting element that is supported by the submount and emits first and second emitted light traveling in opposite directions;
A first reflecting surface for reflecting the first emitted light;
A second reflecting surface for reflecting the second emitted light;
Including
The first reflecting surface is formed on the first surface of the base inclined with respect to the traveling direction of the first emitted light,
The second reflecting surface is formed on the second surface of the base inclined with respect to the traveling direction of the second emitted light,
The first reflected light reflected by the first reflecting surface and the second reflected light reflected by the second reflecting surface travel in the same direction,
The thermal conductivity of the base is greater than the thermal conductivity of the submount,
The thermal conductivity of the submount is greater than the thermal conductivity of the light emitting device.

  According to such a light emitting device, for example, since the first surface and the second surface inclined on the base are formed in advance by cutting or the like, the first surface and the second surface are formed by vapor deposition or the like. By forming the reflecting portion, the first reflecting surface and the second reflecting surface can be easily aligned with high accuracy. Furthermore, since the mounting of the submount can be performed by being inserted into the groove, the positioning of the submount and the light emitting element can be performed easily and with high accuracy. As described above, the light emitting element and the first reflecting surface and the second reflecting surface can be easily aligned with high accuracy.

  In addition, according to such a light emitting device, since a part of the submount is buried in the groove portion of the base, the heat dissipation of the submount can be improved.

In the light emitting device according to the present invention,
The first surface is inclined 45 degrees with respect to the traveling direction of the first emitted light,
The second surface may be inclined 45 degrees with respect to the traveling direction of the second emitted light.

  According to such a light emitting device, the traveling direction of the first emitted light and the traveling direction of the first reflected light can be perpendicular to each other, and the traveling direction of the second emitted light is the second direction. The traveling direction of the reflected light can be perpendicular.

In the light emitting device according to the present invention,
The first surface and the second surface may have a concave shape.

  According to such a light emitting device, it is possible to reflect the first emitted light and the second emitted light even when the emission angles of the first emitted light and the second emitted light are large.

In the light emitting device according to the present invention,
The first surface and the second surface have a parabolic shape,
A first emission surface of the light emitting element that emits the first emission light is located at a focal point of the first surface;
The second emission surface of the light emitting element that emits the second emission light may be located at a focal point of the second surface.

  According to such a light emitting device, since the first emitted light and the second emitted light can be converted into parallel light, the light use efficiency can be improved.

In the light emitting device according to the present invention,
The light emitting device may be a super luminescent diode.

  According to such a light emitting device, it is possible to prevent laser oscillation by suppressing the formation of a resonator due to end face reflection, and thus speckle noise can be reduced.

In the light emitting device according to the present invention,
The first emission surface of the light emitting element that emits the first emission light and the end surface on the first emission surface side of the submount are in the same plane,
The second emission surface of the light emitting element that emits the second emission light and the end surface on the second emission surface side of the submount are in the same plane,
The end surface on the first emission surface side of the submount and the first reflection surface are in contact with each other.
An end surface of the submount on the second emission surface side and the second reflection surface may be in contact with each other.

  According to such a light emitting device, the problem that the emitted light is blocked by the base and the shape of the emitted light is distorted can be avoided, and the emitted light having a better shape (cross-sectional shape) can be obtained. .

The projector according to the present invention is
A light emitting device according to the present invention;
A light modulation device that modulates light emitted from the light emitting device according to image information;
A projection device for projecting an image formed by the light modulation device;
including.

  According to such a projector, since the light emitting device according to the present invention can be used as a light source, high reliability can be obtained.

The top view which shows typically the light-emitting device which concerns on this embodiment. FIG. 3 is a cross-sectional view schematically showing the light emitting device according to the embodiment. FIG. 3 is a cross-sectional view schematically showing the light emitting device according to the embodiment. Sectional drawing which shows typically the manufacturing process of the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the light-emitting device which concerns on the 1st modification of this embodiment. Sectional drawing which shows typically the light-emitting device which concerns on the 2nd modification of this embodiment. Sectional drawing which shows typically the light-emitting device which concerns on the 3rd modification of this embodiment. The top view which shows typically the light-emitting device which concerns on the 4th modification of this embodiment. Sectional drawing which shows typically the light-emitting device which concerns on the 4th modification of this embodiment. The top view which shows typically the light-emitting device which concerns on the 5th modification of this embodiment. Sectional drawing which shows typically the light-emitting device which concerns on the 5th modification of this embodiment. 1 is a diagram schematically showing a projector according to an embodiment.

  Preferred embodiments of the present invention will be described below with reference to the drawings.

1. First, the light emitting device 1000 according to the present embodiment will be described with reference to the drawings. FIG. 1 is a plan view schematically showing the light emitting device 1000. 2 is a cross-sectional view taken along the line II-II of FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 1 and 3, the lid 180 is not shown for convenience. In FIG. 2, the light emitting element 100 is illustrated in a simplified manner for convenience.

  As shown in FIGS. 1 to 3, the light emitting device 1000 can include a package 190, a light emitting element 100, a submount 150, an insulating member 136, a terminal 134, and a connecting member 132. Here, a case where the light emitting element 100 is an InGaAlP-based (red) super luminescent diode (hereinafter also referred to as “SLD”) will be described. Unlike a semiconductor laser, an SLD can prevent laser oscillation by suppressing the formation of a resonator due to end face reflection. Therefore, speckle noise can be reduced.

  The light emitting element 100 is mounted on the base 140 of the package 190 via the submount 150. It can be said that the light emitting element 100 is formed on the submount 150. As shown in FIGS. 1 to 3, the light emitting device 100 includes a clad layer (hereinafter referred to as “first clad layer”) 108, an active layer 106 formed thereon, and a clad layer ( (Hereinafter referred to as “second cladding layer”) 104. The light emitting element 100 further includes, for example, a substrate 102, a contact layer 110, an electrode (hereinafter referred to as “first electrode”) 114, an electrode (hereinafter referred to as “second electrode”) 112, and an insulating portion 116. Can have.

  As the substrate 102, for example, a first conductivity type (for example, n-type) GaAs substrate or the like can be used.

  The second cladding layer 104 is formed under the substrate 102. As the second cladding layer 104, for example, an n-type AlGaInP layer can be used. Although not shown, a buffer layer may be formed between the substrate 102 and the second cladding layer 104. As the buffer layer, for example, an n-type GaAs layer, an InGaP layer, or the like can be used.

  The active layer 106 is formed under the second cladding layer 104. The active layer 106 is provided on the base 140 side in the light emitting element 100, for example. That is, the active layer 106 is provided, for example, on the lower side of the light emitting element 100 than the middle in the thickness direction (the side opposite to the substrate 102 side). The active layer 106 is sandwiched between the second cladding layer 104 and the first cladding layer 108. The active layer 106 has, for example, a multiple quantum well (MQW) structure in which three quantum well structures each composed of an InGaP well layer and an InGaAlP barrier layer are stacked.

  The shape of the active layer 106 is, for example, a rectangular parallelepiped (including a cube). As shown in FIG. 1, the active layer 106 has a first side surface 105 and a second side surface 107. The first side surface 105 and the second side surface 107 face each other, and are parallel, for example. The active layer 106 sandwiched between the first cladding layer 108 and the second cladding layer 104 constitutes a laminated structure, for example. The first side surface 105 and the second side surface 107 are surfaces of the active layer 106 that are not in contact with the first cladding layer 108 or the second cladding layer 104, and can be said to be exposed surfaces in the stacked structure. The multilayer structure may further include a substrate 102 and a contact layer 110.

  A part of the active layer 106 constitutes a gain region 160 that becomes a current path of the active layer 106. The gain region 160 can generate light, and this light can receive gain within the gain region 160. The planar shape of the gain region 160 is, for example, a parallelogram. As shown in FIG. 1, the gain region 160 is a first region from the first side surface 105 to the second side surface 107 in plan view from the stacking direction of the active layer 106 (in plan view from the thickness direction of the active layer 106). It is provided in a direction inclined with respect to the perpendicular P of the side surface 105. Thereby, the laser oscillation of the light generated in the gain region 160 can be suppressed or prevented. When the gain region 160 is provided in a certain direction, the direction corresponds to the center of the first end surface 162 on the first side surface 105 side of the gain region 160 and the second direction when viewed in a plan view. This is a case where it coincides with the direction connecting the center of the second end surface 164 on the side surface 107 side. Although one gain region 160 is provided in the illustrated example, the number thereof is not particularly limited, and a plurality of gain regions 160 may be provided.

  As shown in FIG. 3, the first cladding layer 108 is formed under the active layer 106. As the first cladding layer 108, for example, a second conductivity type (for example, p-type) AlGaInP layer or the like can be used.

  For example, the p-type first cladding layer 108, the active layer 106 not doped with impurities, and the n-type second cladding layer 104 constitute a pin diode. Each of the first cladding layer 108 and the second cladding layer 104 is a layer having a larger forbidden band width and a smaller refractive index than the active layer 106. The active layer 106 has a function of amplifying light. The first cladding layer 108 and the second cladding layer 104 have a function of confining injected carriers (electrons and holes) and light with the active layer 106 interposed therebetween.

  The contact layer 110 is formed under the first cladding layer 108. As the contact layer 110, a layer in ohmic contact with the first electrode 114 can be used. The contact layer 110 is made of, for example, a second conductivity type semiconductor. As the contact layer 110, for example, a p-type GaAs layer can be used.

The insulating part 116 is formed under the contact layer 110 other than under the gain region 160. That is, the insulating part 116 has an opening below the gain region 160, and the surface of the contact layer 110 is exposed in the opening. As the insulating part 116, for example, a SiN layer, a SiO ₂ layer, a polyimide layer, or the like can be used.

  The first electrode 114 is formed under the exposed contact layer 110 and under the insulating portion 116. The first electrode 114 is electrically connected to the first cladding layer 108 via the contact layer 110. The first electrode 114 is one electrode for driving the light emitting element 100. As the first electrode 114, for example, a layer in which a Cr layer, an AuZn layer, and an Au layer are stacked in this order from the contact layer 110 side can be used. The contact surface between the first electrode 114 and the contact layer 110 has, for example, the same planar shape as that of the gain region 160. In the illustrated example, the current path between the electrodes 112 and 114 is determined by the planar shape of the contact surface between the first electrode 114 and the contact layer 110, and as a result, the planar shape of the gain region 160 can be determined. .

  The second electrode 112 is formed on the entire surface of the substrate 102. The second electrode 112 can be in contact with a layer that is in ohmic contact with the second electrode 112 (the substrate 102 in the illustrated example). The second electrode 112 is electrically connected to the second cladding layer 104 via the substrate 102. The second electrode 112 is the other electrode for driving the light emitting element 100. As the second electrode 112, for example, a layer in which a Cr layer, an AuGe layer, a Ni layer, and an Au layer are stacked in this order from the substrate 102 side can be used. A second contact layer (not shown) is provided between the second clad layer 104 and the substrate 102, and the second electrode layer is exposed by dry etching or the like to expose the second electrode. 112 may be provided under the second contact layer. Thereby, a single-sided electrode structure can be obtained. For example, an n-type GaAs layer can be used as the second contact layer.

  In the light emitting element 100, when a forward bias voltage of a pin diode is applied between the first electrode 114 and the second electrode 112, recombination of electrons and holes occurs in the gain region 160 of the active layer 106. This recombination causes light emission. Starting from this generated light, stimulated emission occurs in a chain, the light travels in the gain region 160, and the light intensity is amplified during that time, and the first outgoing light L1 is emitted from the first end face (first outgoing face) 170. And can be emitted from the second end face (second emission surface) 172 as the second emission light L2. The first emitted light L1 and the second emitted light L2 can be emitted in a direction more inclined than the inclination of the gain region 160 with respect to the perpendicular P of the first side surface 107, for example, due to light refraction. The first outgoing light L1 and the second outgoing light L2 can travel in a direction (horizontal direction) parallel to the upper surface of the active layer 106, for example. The traveling direction of the first emitted light L1 and the traveling direction of the second emitted light L2 are opposite to each other.

  As shown in FIGS. 1 to 3, the package 190 can include a first reflecting surface 172, a second reflecting surface 174, a reflecting portion 170, a base 140, and a lid 180.

  As shown in FIG. 2, the first reflecting surface 172 can reflect the first emitted light L <b> 1 toward the upper side of the light emitting element 100. The first emitted light L1 is reflected by the first reflecting surface 172, and can travel, for example, vertically upward (Z direction in FIG. 1) with respect to the upper surface of the active layer 106 as the first reflected light L3. The first reflecting surface 172 is formed on the first surface 144 of the base 140. The first surface 144 is inclined with respect to the traveling direction of the first outgoing light L1, and is inclined 45 degrees in the illustrated example. Thereby, the direction in which the first outgoing light L1 travels and the direction in which the first reflected light L3 travels can form a right angle. The reflectance of the first reflecting surface 172 with respect to the first outgoing light L1 is preferably higher than 50% and not higher than 100%.

  Similarly, the second reflecting surface 174 can reflect the second emitted light L2 toward the upper side of the light emitting element 100. The second outgoing light L2 is reflected by the second reflecting surface 174, and can travel vertically upward as the second reflected light L4 with respect to the upper surface of the active layer 106, for example. The second reflecting surface 174 is formed on the second surface 146 of the base 140. The second surface 146 is inclined with respect to the traveling direction of the second outgoing light L2, and is inclined 45 degrees in the illustrated example. As a result, the traveling direction of the second emitted light L2 and the traveling direction of the second reflected light L4 can form a right angle. The reflectance of the second reflecting surface 174 with respect to the second outgoing light L2 is preferably higher than 50% and not higher than 100%.

  As shown in FIG. 1, the traveling direction of the first outgoing light L1 is perpendicular to the intersection line V between the plane parallel to the upper surface of the active layer 106 (XY plane) and the first reflecting surface 172. ing. Similarly, the traveling direction of the second emitted light L2 is perpendicular to the intersection line W between the surface parallel to the upper surface of the active layer 106 and the second reflecting surface 174. Thereby, the traveling direction of the first reflected light L3 by the first reflecting surface 172 and the traveling direction of the second reflected light L4 by the second reflecting surface 174 can be made the same.

  The base 140 can indirectly support the light emitting device 100 via the submount 150. As the base 140, for example, a plate-shaped (cuboid-shaped) member provided with a recess 148 can be used. The number of side surfaces of the recess 148 is four, for example. For example, the light emitting element 100 is surrounded by four side surfaces of the recess 148. In the illustrated example, the first surface 144 and the second surface 146 of the base 140 constitute the side surface of the recess 148.

  The submount 150 is supported by the base 140. As shown in FIG. 2, a part of the submount 150 is buried in a groove 142 formed on the bottom surface of the recess 148 of the base 140. That is, the side surface of the submount 150 is in contact with the inner surface of the groove 142. As the submount 150, for example, a plate-like member can be used. The submount 150 can directly support the light emitting element 100.

  The thermal conductivity of the base 140 is higher than the thermal conductivity of the submount 150, and the thermal conductivity of the submount 150 is higher than the thermal conductivity of the light emitting element 100. For example, although not illustrated, when the light emitting element 100 is mounted directly on the base 140 without using the submount 150, due to the difference in thermal expansion coefficient between the base 140 and the light emitting element 100, due to overheating during mounting or heat generation during driving. In some cases, warpage occurs and stress is applied to the light-emitting element 100 to reduce reliability. With respect to such a problem, in the present embodiment, by using the submount 150, it is possible to relieve the stress caused by the difference in thermal expansion coefficient between the base 140 and the light emitting element 100, and to improve the reliability. The thermal expansion coefficient of the submount 150 is desirably close to the thermal expansion coefficient of the light emitting element 100. The thermal conductivity of each of the base 140 and the submount 150 is, for example, 140 W / mK or more. Examples of the material of the base 140 include Cu, Al, Mo, W, Si, C, Be, Au, and these compounds (for example, AlN, BeO) and alloys (for example, CuMo). . Further, the base 140 can also be configured from a combination of these examples, for example, a multilayer structure of a copper (Cu) layer and a molybdenum (Mo) layer. Examples of the material of the submount 150 include AlN, CuW, SiC, BeO, CuMo, CMC in which Cu and Mo are stacked, and the like.

  The reflection unit 170 may be formed on the first surface 144 and the second surface 146 of the base 140. Of the surface of the reflecting portion 170, the surface on which the first outgoing light L1 is incident is the first reflective surface 172, and the surface on which the second outgoing light L2 is incident is the second reflective surface 174. The reflection unit 170 can be made of, for example, Al, Ag, Au, or the like. By providing the reflecting portion 170, the reflectance of the reflecting surfaces 172 and 174 can be increased. Note that, for example, the first surface 144 and the second surface 146 may be the first reflecting surface 172 and the second reflecting surface 174 without providing the reflecting portion 170.

  As shown in FIGS. 1 and 3, for example, a cylindrical through hole 137 is formed in the base 140. In the through hole 137, for example, a columnar terminal 134 whose side surface is covered with an insulating member 136 is provided. The insulating member 136 is made of, for example, resin, ceramics (for example, AlN). The terminal 134 is made of, for example, copper (Cu).

  The terminal 134 is connected to the second electrode 112 of the light emitting element 100 by a connection member 132 such as wire bonding. The connecting member 132 is provided so as not to block the optical paths of the emitted lights L1 and L2. Further, the first electrode 114 of the light emitting element 100 is connected to the submount 150 by, for example, a plating bump or the like (not shown). The submount 150 is connected to the base 140. A voltage can be applied between the first electrode 114 and the second electrode 112 by applying different potentials to the terminal 134 and the base 140.

  The lid 180 is provided on the base 140 as shown in FIG. The lid 180 can seal the light emitting element 100 provided in the recess 148 by sealing the recess 148 of the base 140. The lid 180 is made of a material that is transparent to the wavelengths of the reflected lights L3 and L4. Thereby, at least a part of the first reflected light L3 can pass through the lid 180, and at least a part of the second reflected light L4 can pass through the lid 180. The lid 180 can be made of, for example, quartz, glass, quartz, plastic, or the like. These can be appropriately selected according to the wavelengths of the reflected lights L3 and L4. Thereby, the absorption loss of light can be reduced.

  As an example of the light-emitting device 1000, the case where the light-emitting element 100 is an InGaAlP system has been described, but the light-emitting element 100 can use any material system capable of forming a light-emitting gain region. As the semiconductor material, for example, an AlGaN-based, InGaN-based, GaAs-based, InGaAs-based, GaInNAs-based, or ZnCdSe-based semiconductor material can be used.

  The light emitting device 1000 has the following features, for example.

  According to the light emitting device 1000, the reflection surfaces 172 and 174 are formed on the surfaces 144 and 146 of the base 140 that are inclined with respect to the traveling direction of the emitted light L1 and L2. It can be said that the reflecting surfaces 172 and 174 are formed integrally with the base 140. Therefore, although not illustrated, for example, the positional accuracy of the reflecting surfaces 172 and 174 is improved as compared with a case where an optical axis conversion member is separately installed on the bottom surface of the concave portion 148 of the flat base 140 to reflect the emitted light. Can do. That is, for example, when an optical axis conversion member is separately installed, it is necessary to perform alignment using an alignment mark or the like. In this embodiment, the surfaces 144 and 146 inclined to the base 140 by cutting or the like in advance are provided. Therefore, the reflective surfaces 172 and 174 can be easily aligned with high accuracy by forming the reflective portions 170 on the surfaces 144 and 146 by vapor deposition, for example.

  Further, according to the light emitting device 1000, the submount 150 on which the light emitting element 100 is supported is supported so as to be buried in the groove 142 of the base 140. That is, since the submount 150 can be mounted in the groove 142, the submount 150 and the light emitting element 100 can be easily aligned with high accuracy.

  As described above, in the light emitting device 1000, the light emitting element 1000 and the reflecting surfaces 172 and 174 can be easily aligned with high accuracy.

  According to the light emitting device 1000, as described above, a part of the submount 150 is embedded in the groove 142 of the base 140. Therefore, not only the bottom surface of the submount 150 but also the side surface can be in contact with the base 140. Further, the thermal conductivity of the base 140 is larger than the thermal conductivity of the submount 150. Therefore, the heat dissipation of the submount 150 can be improved.

  According to the light emitting device 1000, the two outgoing lights L1 and L2 can be reflected in the same direction. That is, the traveling direction of the first reflected light L3 by the first reflecting surface 172 and the traveling direction of the second reflected light L4 by the second reflecting surface 174 can be made the same. Thereby, for example, when the light-emitting device 1000 is used as a light source of a projector, the configuration of the optical system of the projector can be simplified, and optical axis alignment can be facilitated in the projector.

  According to the light emitting device 1000, the light emitting element 100 can be an SLD. Therefore, it is possible to suppress or prevent laser oscillation of light generated in the gain region 160. Therefore, speckle noise can be reduced.

  According to the light emitting device 1000, the active layer 106 can be provided on the base 140 side in the light emitting element 100. That is, the active layer 106 is provided on the light emitting element 100 below the middle in the thickness direction (on the side opposite to the substrate 102 side). Further, the thermal conductivity of the base 140 is larger than the thermal conductivity of the light emitting device 100. Therefore, the heat dissipation of the light emitting element 100 can be improved.

2. Method for Manufacturing Light-Emitting Device Next, a method for manufacturing the light-emitting device 1000 according to the present embodiment will be described with reference to the drawings. 4 to 7 are cross-sectional views schematically showing the manufacturing process of the light emitting device 1000.

  As shown in FIG. 4, the second cladding layer 104, the active layer 106, the first cladding layer 108, and the contact layer 110 are epitaxially grown in this order on the substrate 102. As a method for epitaxial growth, for example, MOCVD (Metal Organic Chemical Vapor Deposition) method, MBE (Molecular Beam Epitaxy) method or the like can be used.

  As shown in FIG. 5, an insulating part 116 having an opening is formed on the contact layer 110. The insulating part 116 is formed by, for example, a CVD (Chemical Vapor Deposition) method. The opening is formed, for example, by patterning the insulating portion by photolithography technique and etching technique so that the contact layer 110 is exposed.

  Next, the first electrode 114 is formed on the exposed contact layer 110 and the insulating portion 116. Next, the second electrode 112 is formed under the lower surface of the substrate 102. The first electrode 114 and the second electrode 112 are formed by, for example, a vacuum evaporation method. Note that the order of forming the first electrode 114 and the second electrode 112 is not particularly limited. Through the above steps, the light-emitting element 100 can be obtained.

  As shown in FIG. 6, the base 140 having the groove 142, the first surface 144, and the second surface 146 is produced by, for example, cutting.

  Next, the reflecting portion 170 is formed on the first surface 144 and the second surface 146. The reflective unit 170 can be formed by using a vapor deposition method or the like by covering the portions other than the first surface 144 and the second surface 146 with a mask such as a photoresist, for example. Although not shown, the reflecting portion 170 may be formed on the entire surface by a vapor deposition method or the like without using a mask or the like. In this case, the first reflecting surface 172 and the second reflecting surface 174 can be formed with higher accuracy regardless of the mask accuracy.

  As shown in FIG. 7, a through hole 137 is provided in the base 140 by a known method. Next, the insulating member 136 is formed so as to cover the inner side surface of the through hole 137. The insulating member 136 is formed so as not to block the through hole 137. The insulating member 136 is formed by, for example, a CVD method. Next, the rod-shaped terminal 134 is inserted inside the insulating member 136. Note that a method in which an insulating member 136 formed around the rod-shaped terminal 134 is inserted into the through hole 137 can also be used.

  As shown in FIG. 3, first, the light emitting element 100 is mounted on the submount 150, and then the submount 150 on which the light emitting element 100 is mounted is mounted on the base 140. The submount 150 is mounted so that a part thereof is buried in the groove 142 of the base 140. The light emitting element 100 is mounted with the active layer 106 side facing the base 140 side (junction down). That is, the light emitting element 100 can be flip-chip mounted.

  Next, the terminal 134 and the second electrode 112 of the light emitting element 100 are connected by the connection member 132. This step is performed, for example, by wire bonding.

  As shown in FIG. 2, the lid 180 is bonded or welded to the base 140 in, for example, a nitrogen atmosphere. Thereby, the light emitting element 100 can be sealed.

  Through the above steps, the light-emitting device 1000 can be manufactured.

  According to the method for manufacturing the light emitting device 1000, it is possible to manufacture the light emitting device 1000 capable of easily and accurately aligning the light emitting element 100 and the reflecting surfaces 172 and 174.

3. Next, light emitting devices 2000, 3000, 4000, 5000, and 6000 according to variations of the present embodiment will be described with reference to the drawings. Hereinafter, in the light emitting devices 2000, 3000, 4000, 5000, and 6000 according to the modification of the present embodiment, members having the same functions as those of the components of the light emitting device 1000 according to the present embodiment are denoted by the same reference numerals, Detailed description thereof is omitted.

(1) Light-Emitting Device According to First Modification First, a light-emitting device 2000 according to a first modification of the present embodiment will be described with reference to the drawings. FIG. 8 is a cross-sectional view schematically showing the light emitting device 2000, and corresponds to FIG. In FIG. 8, the light-emitting element 100 is simplified for convenience.

  In the example of the light emitting device 1000, as shown in FIG. 2, the first surface 144 and the second surface 146 of the base 140 are inclined 45 degrees with respect to the traveling direction of the emitted lights L1 and L2. On the other hand, in the light emitting device 2000, as shown in FIG. 8, the first surface 144 and the second surface 146 can be concave. Therefore, the first reflection surface 172 and the second reflection surface 174 can have a concave shape. That is, the first reflecting surface 172 and the second reflecting surface 174 can be concave mirrors. According to the light emitting device 2000, both the outgoing lights L1 and L2 can be reflected toward the upper side of the light emitting element 100 even when the emission angles of the outgoing lights L1 and L2 are large.

  Further, in the illustrated example, the first surface 144 and the second surface 146 have a parabolic shape. That is, the first reflecting surface 172 and the second reflecting surface 174 can be parabolic mirrors. For example, the first end surface 162 of the light emitting element 100 is disposed so as to be positioned at the focal point of the first surface 144, and the second end surface 164 of the light emitting element 100 is disposed so as to be positioned at the focal point of the second surface 146, for example. Has been. Thereby, the two emitted lights L1 and L2 emitted from the light emitting element 100 in the horizontal direction can be reflected in the same direction, and can be converted into parallel light. Thus, according to the light-emitting device 2000, since the emitted lights L1 and L2 can be further converted into parallel light, the light utilization efficiency can be improved.

(2) Light Emitting Device According to Second Modification Next, a light emitting device 3000 according to a second modification of the present embodiment will be described with reference to the drawings. FIG. 9 is a sectional view schematically showing the light emitting device 3000 and corresponds to FIG. In FIG. 9, the lid 180 is not shown for convenience.

  In the example of the light emitting device 1000, as shown in FIG. 3, the active layer 106 is provided on the base 140 side in the light emitting element 100. On the other hand, in the light emitting device 3000, as shown in FIG. 9, the active layer 106 is provided on the side opposite to the base 140 in the light emitting element 100. That is, the active layer 106 is provided above the middle of the light emitting element 100 in the thickness direction. In the light emitting device 3000, the substrate 102 is provided between the active layer 106 and the base 140. The second electrode 112 is connected to the submount 150 by, for example, a connection member (not shown). The first electrode 114 is connected to the terminal 134 by, for example, a connection member 132.

  According to the light emitting device 3000, since the substrate 102 is provided between the active layer 106 and the base 140, the active layer 106 is separated from the base 140 by at least the thickness of the substrate 102 compared to the example of the light emitting device 1000. It is provided at the position. Therefore, it is possible to obtain outgoing light having a better shape (cross-sectional shape). For example, if the emission angle of the emitted light from the gain region 160 is large, the emitted light may be blocked by the base 140, and the shape of the emitted light may be distorted. In the light emitting device 3000, such a problem can be avoided.

  Although not shown, in the light emitting device 3000, the entire submount 150 may be embedded in the groove 142. That is, all of the side surfaces of the submount 150 may be in contact with the side surfaces of the groove 142. Accordingly, the light emitting device 3000 can further improve the heat dissipation of the submount 150 compared to the light emitting device 1000, for example, while preventing the shape of the emitted light from being distorted.

(3) Light Emitting Device According to Third Modification Next, a light emitting device 4000 according to a third modification of the present embodiment will be described with reference to the drawings. FIG. 10 is a cross-sectional view schematically showing the light emitting device 4000, and corresponds to FIG. In addition, in FIG. 10, illustration of the lid 180 is abbreviate | omitted for convenience.

  In the example of the light emitting device 1000, the so-called gain waveguide type has been described. On the other hand, the light emitting device 4000 can be a so-called refractive index waveguide type.

  That is, in the light emitting device 4000, as shown in FIG. 10, the contact layer 110 and a part of the first cladding layer 108 can form a columnar portion 111. The planar shape of the columnar portion 111 is the same as that of the gain region 160. For example, the current path between the electrodes 112 and 114 is determined by the planar shape of the columnar portion 111, and as a result, the planar shape of the gain region 160 is determined. Although not shown, the columnar portion 111 may be composed of, for example, the contact layer 110, the first cladding layer 108, and the active layer 106, and further includes the second cladding layer 104. It may be. Moreover, the side surface of the columnar part 111 can also be inclined.

  An insulating part 116 is provided on the side of the columnar part 111. The insulating part 116 can be in contact with the side surface of the columnar part 111. The current between the electrodes 112 and 114 can flow through the columnar portion 111 sandwiched between the insulating portions 116, avoiding the insulating portions 116. The insulating part 116 may have a refractive index smaller than that of the active layer 106. Thereby, light can be efficiently confined in the gain region 160 in the planar direction (direction parallel to the upper surface of the active layer 106).

(4) Light Emitting Device According to Fourth Modification Next, a light emitting device 5000 according to a fourth modification of the present embodiment will be described with reference to the drawings. FIG. 11 is a plan view schematically showing the light emitting device 5000. 12 is a cross-sectional view taken along line XII-XII of FIG. 11 schematically showing the light emitting device 5000. In FIG. 11, the lid 180 is not shown for convenience. In FIG. 12, the light-emitting element 100 is simplified for convenience.

  In the example of the light emitting device 1000, as shown in FIGS. 1 and 2, one light emitting element 100 is provided in the package 190. On the other hand, in the light emitting device 5000, a plurality of the light emitting elements 100 can be provided in the package 190 as shown in FIGS. In the illustrated example, two light emitting elements 100 are provided, but the number is not particularly limited.

  According to the light emitting device 5000, for example, compared to the example of the light emitting device 1000, the output of the entire light emitting device can be increased.

(5) Light-Emitting Device According to Fifth Modification Next, a light-emitting device 6000 according to a fifth modification of the present embodiment will be described with reference to the drawings. FIG. 13 is a plan view schematically showing the light emitting device 6000. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13 schematically showing the light emitting device 6000. As shown in FIG. In FIG. 13, the lid 180 is not shown for convenience. In FIG. 14, the light emitting element 100 is illustrated in a simplified manner for convenience.

  In the example of the light emitting device 1000, the case where the light emitting element 100 is an SLD has been described. On the other hand, in the light emitting device 6000, the light emitting element 100 can be a semiconductor laser.

  That is, in the light emitting device 6000, as shown in FIG. 13, the gain region 160 of the light emitting element 100 is provided orthogonal to the first side surface 105 and the second side surface 107. That is, the gain region 160 is provided in a direction parallel to the normal line P of the first side surface 105. Therefore, a resonator can be formed between the first end surface 162 and the second end surface 164. Further, the emitted lights L1 and L2 can travel in a direction orthogonal to the side surfaces 105 and 107.

  In the light emitting device 6000, as shown in FIGS. 13 and 14, the first end face 162 and the third side face (end face) 152 on the first end face 162 side of the submount 150 are on the same plane. Similarly, the second end surface 164 and the fourth side surface (end surface) 154 on the second end surface 164 side of the submount 150 are on the same plane. The third side surface 152 is in contact with the first reflecting surface 172. Similarly, the fourth side surface 154 is in contact with the second reflecting surface 174. That is, in the light emitting device 6000, the light emitting element 100 and the first reflecting surface 172 are in contact with each other in plan view from the stacking direction of the active layer 106, and the base 140 is interposed between the light emitting element 100 and the first reflecting surface 172. The surface of is not exposed. Similarly, the light emitting element 100 and the second reflecting surface 174 are in contact with each other, and the surface of the base 140 is not exposed between the light emitting element 100 and the second reflecting surface 174. Thereby, in the light emitting device 6000, emitted light having a better shape (cross-sectional shape) can be obtained. For example, if the emission angle of the emitted light from the gain region 160 is large, the emitted light may be blocked by the base 140, and the shape of the emitted light may be distorted. With the light emitting device 6000, such a problem can be avoided.

4). Next, the projector 7000 according to the present embodiment will be described with reference to the drawings. FIG. 15 is a diagram schematically showing the projector 7000. In FIG. 15, for convenience, the casing that configures the projector 7000 is omitted.

  In the projector 7000, the red light source (light emitting device) 1000R that emits red light, green light, and blue light, the green light source (light emitting device) 1000G, and the blue light source (light emitting device) 1000B are light emitting devices according to the present invention (for example, light emitting devices). 1000).

  The projector 7000 includes transmission type liquid crystal light valves (light modulation devices) 704R, 704G, and 704B that modulate light emitted from the light sources 1000R, 1000G, and 1000B in accordance with image information, and liquid crystal light valves 704R, 704G, and 704B. A projection lens (projection device) 708 that magnifies and projects the image formed on the screen (display surface) 710. Further, the projector 7000 can include a cross dichroic prism (color light combining means) 806 that combines light emitted from the liquid crystal light valves 704R, 704G, and 704B and guides the light to the projection lens 708.

  Further, the projector 7000 provides uniformizing optical systems 702R, 702G, and 702B downstream of the light sources 1000R, 1000G, and 1000B in order to uniformize the illuminance distribution of the light emitted from the light sources 1000R, 1000G, and 1000B. The liquid crystal light valves 704R, 704G, and 704B are illuminated with light that has been provided with a uniform illuminance distribution. The uniformizing optical systems 702R, 702G, and 702B are configured by, for example, a hologram 702a and a field lens 702b.

  The three color lights modulated by the liquid crystal light valves 704R, 704G, and 704B are incident on the cross dichroic prism 706. This prism is formed by bonding four right-angle prisms, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are arranged in a cross shape on the inner surface thereof. These dielectric multilayer films combine the three color lights to form light representing a color image. The synthesized light is projected onto the screen 710 by the projection lens 706 that is a projection optical system, and an enlarged image is displayed.

  According to the projector 7000, as described above, it is possible to use the light emitting device 1000 having a high alignment accuracy between the light emitting element 1000 and the reflecting surfaces 172 and 174 as a light source. Therefore, the projector 7000 can have high reliability.

  In the above example, a transmissive liquid crystal light valve is used as the light modulation device. However, a light valve other than liquid crystal may be used, or a reflective light valve may be used. Examples of such a light valve include a reflective liquid crystal light valve and a digital micromirror device. Further, the configuration of the projection optical system is appropriately changed depending on the type of light valve used.

  Further, the light-emitting device 1000 has a scanning unit that is a scanning unit that is an image forming device that displays an image of a desired size on a display surface by scanning light from the light-emitting device 1000 on a screen. The present invention can also be applied to a light source device of a device (projector).

  In addition, embodiment mentioned above and a modification are examples, Comprising: It is not necessarily limited to these. For example, it is possible to appropriately combine each embodiment and each modification.

  Although the embodiments of the present invention have been described in detail as described above, those skilled in the art will readily understand that many modifications are possible without substantially departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention.

100 light emitting element, 102 substrate, 104 second cladding layer, 105 first side surface,
106 active layer, 107 second side surface, 108 first cladding layer, 110 contact layer,
111 columnar section, 112 second electrode, 114 first electrode, 116 insulating section,
132 connecting members, 134 terminals, 136 insulating members, 137 through holes,
140 base, 142 groove, 144 first surface, 146 second surface, 148 recess,
150 submount, 152 third side, 154 fourth side, 160 gain region,
162 first end face, 164 second end face, 170 reflecting portion, 172 first reflecting face,
174 Second reflecting surface, 180 lid, 190 package, 702 homogenizing optical system,
702a hologram, 702b field lens, 704 liquid crystal light valve,
706 Cross dichroic prism, 707 projection lens, 710 screen,
1000 to 6000 Light emitting device, 7000 Projector

Claims (7)

A base formed with a groove,
A submount supported by the base and at least partially embedded in the groove;
A light emitting element that is supported by the submount and emits first and second emitted light traveling in opposite directions;
A first reflecting surface for reflecting the first emitted light;
A second reflecting surface for reflecting the second emitted light;
Including
The first reflecting surface is formed on the first surface of the base inclined with respect to the traveling direction of the first emitted light,
The second reflecting surface is formed on the second surface of the base inclined with respect to the traveling direction of the second emitted light,
The first reflected light reflected by the first reflecting surface and the second reflected light reflected by the second reflecting surface travel in the same direction,
The thermal conductivity of the base is greater than the thermal conductivity of the submount,
The light emitting device has a thermal conductivity of the submount greater than that of the light emitting element. In claim 1,
The first surface is inclined 45 degrees with respect to the traveling direction of the first emitted light,
The light emitting device, wherein the second surface is inclined 45 degrees with respect to a traveling direction of the second emitted light. In claim 1,
The light emitting device, wherein the first surface and the second surface have a concave shape. In claim 3,
The first surface and the second surface have a parabolic shape,
A first emission surface of the light emitting element that emits the first emission light is located at a focal point of the first surface;
The light emitting device, wherein a second emission surface of the light emitting element that emits the second emission light is located at a focal point of the second surface. In any one of Claims 1 thru | or 4,
The light-emitting device is a superluminescent diode. In any one of Claims 1 thru | or 4,
The first emission surface of the light emitting element that emits the first emission light and the end surface on the first emission surface side of the submount are in the same plane,
The second emission surface of the light emitting element that emits the second emission light and the end surface on the second emission surface side of the submount are in the same plane,
The end surface on the first emission surface side of the submount and the first reflection surface are in contact with each other.
The light emitting device, wherein an end surface of the submount on the second emission surface side and the second reflection surface are in contact with each other. The light emitting device according to any one of claims 1 to 6,
A light modulation device that modulates light emitted from the light emitting device according to image information;
A projection device for projecting an image formed by the light modulation device;
Including projector.

Images