JP2011086881A - Device and method for removing coating material - Google Patents

Device and method for removing coating material Download PDF

Info

Publication number
JP2011086881A
JP2011086881A JP2009240688A JP2009240688A JP2011086881A JP 2011086881 A JP2011086881 A JP 2011086881A JP 2009240688 A JP2009240688 A JP 2009240688A JP 2009240688 A JP2009240688 A JP 2009240688A JP 2011086881 A JP2011086881 A JP 2011086881A
Authority
JP
Japan
Prior art keywords
substrate
coating material
liquid
gap
cleaning liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009240688A
Other languages
Japanese (ja)
Other versions
JP5412230B2 (en
Inventor
Tomohiro Funo
智弘 府野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009240688A priority Critical patent/JP5412230B2/en
Publication of JP2011086881A publication Critical patent/JP2011086881A/en
Application granted granted Critical
Publication of JP5412230B2 publication Critical patent/JP5412230B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a coating material removing device for removing a coating material from an end face of a substrate after forming the coating material on the substrate. <P>SOLUTION: The coating material removing device includes a holding mechanism 1 holding a substrate 2 on which a coating material is formed, a removing member 4 having a wetted surface 4b opposite to a coating material removal region 2a of the substrate 2 held by the holding mechanism, and a liquid supplying mechanism supplying a cleaning liquid or an etchant to a gap 4c between the wetted surface 4b and the coating material removal region 2a of the substrate 2. The gap 4c is a gap for causing capillary action, and is filled up owing to the capillary action, with the cleaning liquid or the etchant supplied by the liquid supplying mechanism. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、基板端面のコート材を除去するコート材除去装置及びコート材除去方法に関する。   The present invention relates to a coating material removing apparatus and a coating material removing method for removing a coating material on a substrate end face.

フォトリソグラフィ工程で用いるフォトレジストや感光性ポリイミド樹脂、各種層間絶縁膜材料等のコート材を、半導体ウエハやガラス基板等の基板の表面に形成した後に、そのコート材を基板の外縁から所定の幅分だけ除去する基板端面の洗浄方法としては、次の二つの方法が一般的である。   After coating materials such as photoresist, photosensitive polyimide resin, and various interlayer insulating film materials used in the photolithography process are formed on the surface of a substrate such as a semiconductor wafer or a glass substrate, the coating material is spread from the outer edge of the substrate to a predetermined width. The following two methods are generally used as the method for cleaning the substrate end face that is removed by the amount of the substrate.

(ノズルを使用した洗浄方法)
この洗浄方法は、洗浄ノズルによって基板端面に洗浄液を吐出してコート材を溶解させる方法である(例えば特許文献1,2参照)。
(Cleaning method using a nozzle)
This cleaning method is a method in which a coating liquid is dissolved by discharging a cleaning liquid onto a substrate end surface by a cleaning nozzle (see, for example, Patent Documents 1 and 2).

この洗浄方法では、洗浄領域と非洗浄領域との境界線が、洗浄ノズルから吐出される洗浄液の広がる範囲に依存するため、前記境界線のバラツキが生じやすい。その結果、その境界線がノコギリ歯のようなギザギザの線になってしまいやすく、境界線付近のコート材の厚さにもバラツキが生じることが多い。これが原因で基板に熱処理を行った際に、コート材にクラックが生じ、最終的にはピーリングを引き起こすこともある。   In this cleaning method, since the boundary line between the cleaning region and the non-cleaning region depends on the range of the cleaning liquid discharged from the cleaning nozzle, the boundary line is likely to vary. As a result, the boundary line tends to be a jagged line like a sawtooth, and the thickness of the coating material near the boundary line often varies. For this reason, when the substrate is heat-treated, cracks may occur in the coating material, and eventually peeling may occur.

また、洗浄ノズルから吐出される洗浄液の広がる洗浄範囲のバラツキによって、洗浄処理中に、既に洗浄が済んでコート材が除去された領域に再度コート材が染み出してしまうことがある。このため、コート材がポジ型の感光性材料の場合、再度染み出したコート材を除去するための露光及び現像処理を行う必要が生じる。しかし、このような露光及び現像処理を行っても、コート材を完全に除去できないことが多く、その結果、次の工程で使用する装置に搬送する際の搬送不良や装置汚染を招くことがある。   In addition, due to the variation in the cleaning range where the cleaning liquid discharged from the cleaning nozzle spreads, the coating material may ooze out again into the area where the cleaning has already been completed and the coating material has been removed during the cleaning process. For this reason, when the coating material is a positive photosensitive material, it is necessary to perform exposure and development processing to remove the coating material that has oozed again. However, even if such exposure and development processing is performed, the coating material is often not completely removed, and as a result, there may be a conveyance failure or device contamination when transporting to the device used in the next step. .

また、上記洗浄方法では、洗浄処理中に洗浄液を絶えず吐出し続けるため、洗浄液の使用量が多くなるという問題がある。   Further, the above-described cleaning method has a problem that the amount of the cleaning liquid used increases because the cleaning liquid is continuously discharged during the cleaning process.

(ブラシを使用した洗浄方法)
この洗浄方法は、基板端面に洗浄液を吐出しながらブラシ等を基板端面に物理的に接触させてコート材を除去する洗浄方法である(例えば特許文献3,4参照)。
(Washing method using brush)
This cleaning method is a cleaning method in which a brush or the like is physically brought into contact with the substrate end surface while discharging a cleaning liquid onto the substrate end surface to remove the coating material (see, for example, Patent Documents 3 and 4).

この洗浄方法では、洗浄処理中に洗浄液を絶えず吐出し続けるため、洗浄液の使用量が多くなるという問題がある。   This cleaning method has a problem that the amount of the cleaning liquid used increases because the cleaning liquid is continuously discharged during the cleaning process.

特開2004−8876号公報JP 2004-8876 A 特開2003−86556号公報JP 2003-86556 A 特開2007−273612号公報JP 2007-273612 A 特開2003−197592号公報JP 2003-197592 A

本発明の一態様は、基板上にコート材を形成した後に、基板端面のコート材を除去するコート材除去装置及びコート材除去方法を提供することを課題とする。   An object of one embodiment of the present invention is to provide a coating material removing apparatus and a coating material removing method for removing a coating material on a substrate end surface after forming a coating material on a substrate.

本発明の一態様は、コート材が形成された基板を保持する保持機構と、
前記保持機構によって保持された前記基板のコート材除去領域に対向する接液面を有する除去部材と、
前記接液面と前記基板のコート材除去領域との隙間に洗浄液又はエッチング液を供給する液供給機構と、
を具備し、
前記隙間は、毛細管現象を引き起こすための隙間であり、
前記洗浄液は、前記コート材除去領域のコート材を完全に除去して前記基板を洗浄するための液であり、
前記エッチング液は、前記コート材除去領域のコート材の表面を除去して所望の膜厚になるまでエッチングするための液であり、
前記液供給機構によって供給された洗浄液又はエッチング液は、毛細管現象によって前記隙間全体に広げられることを特徴とするコート材除去装置である。
One embodiment of the present invention is a holding mechanism that holds a substrate on which a coating material is formed;
A removal member having a wetted surface facing the coating material removal region of the substrate held by the holding mechanism;
A liquid supply mechanism for supplying a cleaning liquid or an etching liquid to a gap between the liquid contact surface and the coating material removal region of the substrate;
Comprising
The gap is a gap for causing capillary action,
The cleaning liquid is a liquid for cleaning the substrate by completely removing the coating material in the coating material removal region,
The etching solution is a solution for removing the surface of the coating material in the coating material removal region until etching reaches a desired film thickness.
In the coating material removing apparatus, the cleaning liquid or the etching liquid supplied by the liquid supply mechanism is spread over the entire gap by a capillary phenomenon.

上記本発明の一態様によれば、保持機構によって保持された基板のコート材除去領域と除去部材の接液面との隙間に、液供給機構によって洗浄液又はエッチング液を供給し、この洗浄液又はエッチング液を前記隙間全体に毛細管現象によって広げることにより、コート材除去領域のコート材を除去することができる。   According to the above aspect of the present invention, the cleaning liquid or the etching liquid is supplied to the gap between the coating material removal region of the substrate held by the holding mechanism and the liquid contact surface of the removing member by the liquid supply mechanism, and the cleaning liquid or the etching is performed. By spreading the liquid over the entire gap by capillary action, the coating material in the coating material removal region can be removed.

また、本発明の一態様は、前記基板のコート材除去領域が、前記基板の外縁に沿った基板上面、基板下面、又は基板側面の端面であることも可能である。
また、本発明の一態様は、前記基板のコート材除去領域が、前記基板の外縁に沿った基板上面及び基板側面の端面であることも可能である。
In one embodiment of the present invention, the coating material removal region of the substrate can be an end surface of a substrate upper surface, a substrate lower surface, or a substrate side surface along an outer edge of the substrate.
In one embodiment of the present invention, the coating material removal region of the substrate may be an upper surface of the substrate along an outer edge of the substrate and an end surface of the side surface of the substrate.

また、本発明の一態様は、前記基板のコート材除去領域が、前記基板の外縁から所定の幅分の領域に位置する基板上面の端面又は基板下面の端面であることが好ましい。   In one embodiment of the present invention, it is preferable that the coating material removal region of the substrate is an end surface of the upper surface of the substrate or an end surface of the lower surface of the substrate located in a region of a predetermined width from the outer edge of the substrate.

また、本発明の一態様は、前記基板の平面形状が四角形、円形又は楕円形であることも可能である。   In one embodiment of the present invention, the planar shape of the substrate may be a quadrangle, a circle, or an ellipse.

本発明の一態様は、コート材が形成された四角形の基板を保持する保持機構と、
前記保持機構によって保持された前記基板の端面に対向する接液面を有する除去部材と、
前記接液面と前記基板の端面との隙間に洗浄液又はエッチング液を供給する液供給機構と、
前記保持機構を回転させる回転機構と、
を具備し、
前記隙間は、毛細管現象を引き起こすための隙間であり、
前記四角形の基板の端面は、前記基板の四辺に沿った基板上面、基板下面又は基板側面の端面であり、
前記液供給機構は、前記基板の四辺それぞれの中央に位置する隙間に洗浄液又はエッチング液を供給する機構を有しており、
前記洗浄液は、前記基板の端面のコート材を完全に除去して前記基板を洗浄するための液であり、
前記エッチング液は、前記基板の端面のコート材の表面を除去して所望の膜厚になるまでエッチングするための液であり、
前記液供給機構によって供給された洗浄液又はエッチング液は、前記回転機構による遠心力及び毛細管現象によって前記隙間全体に満たされることを特徴とするコート材除去装置である。
One embodiment of the present invention is a holding mechanism for holding a rectangular substrate on which a coating material is formed;
A removal member having a liquid contact surface facing the end surface of the substrate held by the holding mechanism;
A liquid supply mechanism for supplying a cleaning liquid or an etching liquid to a gap between the liquid contact surface and the end surface of the substrate;
A rotation mechanism for rotating the holding mechanism;
Comprising
The gap is a gap for causing capillary action,
The end surface of the rectangular substrate is an end surface of a substrate upper surface, a substrate lower surface or a substrate side surface along the four sides of the substrate,
The liquid supply mechanism has a mechanism for supplying a cleaning liquid or an etching liquid to a gap located at the center of each of the four sides of the substrate,
The cleaning liquid is a liquid for cleaning the substrate by completely removing the coating material on the end face of the substrate,
The etching solution is a solution for removing the surface of the coating material on the end face of the substrate until the film has a desired film thickness,
In the coating material removing apparatus, the cleaning liquid or the etching liquid supplied by the liquid supply mechanism is filled in the entire gap by a centrifugal force and a capillary phenomenon by the rotation mechanism.

また、本発明の一態様は、前記液供給機構が、前記基板の四隅それぞれに位置する隙間に洗浄液又はエッチング液を供給する機構を有することも可能である。   In one embodiment of the present invention, the liquid supply mechanism may include a mechanism for supplying a cleaning liquid or an etching liquid to gaps located at four corners of the substrate.

また、本発明の一態様は、前記基板の四隅それぞれに位置する隙間に供給される洗浄液又はエッチング液の量が、前記基板の四辺それぞれの中央に位置する隙間に供給される洗浄液又はエッチング液より少ないことが好ましい。   Further, according to one embodiment of the present invention, the amount of the cleaning liquid or etching liquid supplied to the gaps located at the four corners of the substrate is greater than the cleaning liquid or etching liquid supplied to the gaps located at the centers of the four sides of the substrate. Less is preferred.

また、本発明の一態様は、前記隙間にガスを供給するガス供給機構を有し、前記ガス供給機構は、前記基板の内側から前記隙間にガスを導入し、前記基板の外側にガスを排気する機構であることが好ましい。   One embodiment of the present invention includes a gas supply mechanism that supplies gas to the gap, and the gas supply mechanism introduces gas into the gap from the inside of the substrate and exhausts gas to the outside of the substrate. It is preferable that this mechanism be used.

また、本発明の一態様は、前記除去部材を配置した基板面と反対側の基板面である基板下面又は基板上面又は基板側面に洗浄液を供給する機構を具備することが好ましい。   One embodiment of the present invention preferably includes a mechanism for supplying a cleaning liquid to a substrate lower surface, a substrate upper surface, or a substrate side surface that is a substrate surface opposite to the substrate surface on which the removing member is disposed.

また、本発明の一態様は、前記基板の四辺それぞれの中央に位置する隙間が、前記中央以外に位置する隙間より大きいことが好ましい。   In one embodiment of the present invention, it is preferable that a gap positioned at the center of each of the four sides of the substrate is larger than a gap positioned at a position other than the center.

また、本発明の一態様は、前記接液面に形成された微細な溝を有し、前記溝は、前記基板の外縁に沿う方向に研磨して形成されたものであることが好ましい。   Further, one embodiment of the present invention preferably includes a fine groove formed on the liquid contact surface, and the groove is formed by polishing in a direction along the outer edge of the substrate.

本発明の一態様は、基板上にコート材を形成し、
前記基板のコート材除去領域に除去部材の接液面を対向させ、前記基板のコート材除去領域と前記接液面との間に毛細管現象を引き起こす隙間を設け、
前記隙間に洗浄液又はエッチング液を供給し、前記隙間全体に毛細管現象によって前記洗浄液又はエッチング液を広げることにより、前記コート材除去領域のコート材を除去するコート材除去方法であって、
前記洗浄液は、前記コート材除去領域のコート材を完全に除去して前記基板を洗浄するための液であり、
前記エッチング液は、前記コート材除去領域のコート材の表面を除去して所望の膜厚になるまでエッチングするための液であることを特徴とするコート材除去方法である。
また、本発明の一態様は、前記基板として、シリコンウエハ、SOI基板、またはガラス基板を用いることも可能である。
In one embodiment of the present invention, a coating material is formed over a substrate,
The liquid contact surface of the removal member is opposed to the coating material removal region of the substrate, and a gap that causes capillary action is provided between the coating material removal region of the substrate and the liquid contact surface,
A coating material removal method for removing the coating material in the coating material removal region by supplying a cleaning liquid or an etching liquid to the gap and spreading the cleaning liquid or the etching liquid by capillary action over the entire gap,
The cleaning liquid is a liquid for cleaning the substrate by completely removing the coating material in the coating material removal region,
In the coating material removal method, the etching solution is a solution for removing the surface of the coating material in the coating material removal region and performing etching until a desired film thickness is obtained.
In one embodiment of the present invention, a silicon wafer, an SOI substrate, or a glass substrate can be used as the substrate.

本発明の一態様は、四角形の基板上にコート材を形成し、
前記基板の四辺に沿った前記基板の端面に除去部材の接液面を対向させ、前記端面と前記接液面との間に毛細管現象を引き起こす隙間を設け、
前記基板及び前記除去部材を回転させながら、前記基板の四辺それぞれの中央に位置する前記隙間に洗浄液又はエッチング液を供給し、前記回転による遠心力及び毛細管現象によって前記中央に位置する前記隙間から前記基板の四隅に位置する前記隙間に前記洗浄液又はエッチング液を広げ、前記隙間全体に洗浄液を満たすことにより、前記端面のコート材を除去するコート材除去方法であって、
前記洗浄液は、前記基板の端面のコート材を完全に除去して前記基板を洗浄するための液であり、
前記エッチング液は、前記基板の端面のコート材の表面を除去して所望の膜厚になるまでエッチングするための液であることを特徴とするコート材除去方法である。
また、本発明の一態様は、前記基板として、ガラス基板を用いることも可能である。
One embodiment of the present invention is to form a coating material on a rectangular substrate,
The liquid contact surface of the removal member is opposed to the end surface of the substrate along the four sides of the substrate, and a gap that causes capillary action is provided between the end surface and the liquid contact surface,
While rotating the substrate and the removing member, a cleaning solution or an etching solution is supplied to the gap located at the center of each of the four sides of the substrate, and from the gap located at the center by the centrifugal force and capillary phenomenon due to the rotation. A coating material removal method for removing the coating material on the end face by spreading the cleaning liquid or etching liquid in the gaps located at the four corners of the substrate and filling the cleaning liquid over the entire gap,
The cleaning liquid is a liquid for cleaning the substrate by completely removing the coating material on the end face of the substrate,
In the coating material removing method, the etching solution is a solution for removing the surface of the coating material on the end face of the substrate until the film has a desired film thickness.
In one embodiment of the present invention, a glass substrate can be used as the substrate.

また、本発明の一態様は、前記隙間全体に洗浄液を満たすことにより、前記端面のコート材を除去した後に、前記隙間への洗浄液又はエッチング液の供給を停止し、前記基板及び前記除去部材を回転させながら、前記基板の内側から前記隙間にガスを導入し、前記基板の外側にガスを排気することにより、前記端面を乾燥させることも可能である。
本発明の一態様は、四角形の基板上にコート材を形成し、
前記基板の四辺に沿った前記基板の端面に除去部材の接液面を対向させ、前記端面と前記接液面との間に毛細管現象を引き起こす隙間を設け、
前記基板及び前記除去部材を第1の基板回転数で回転させながら、前記基板の四辺それぞれの中央に位置する前記隙間に純水を添加した洗浄液を供給し、前記回転による遠心力及び毛細管現象によって前記中央に位置する前記隙間から前記基板の四隅に位置する前記隙間に前記洗浄液を広げ、前記隙間全体に洗浄液を満たし、
前記第1の基板回転数より低い第2の基板回転数で前記基板及び前記除去部材を回転させながら、前記基板の四辺それぞれの中央に位置する前記隙間に洗浄液を供給し、前記回転による遠心力及び毛細管現象によって前記中央に位置する前記隙間から前記基板の四隅に位置する前記隙間に前記洗浄液を広げ、前記隙間全体に洗浄液を満たし、
前記第2の基板回転数より高い第3の基板回転数で前記基板及び前記除去部材を回転させながら、前記基板の四辺それぞれの中央に位置する前記隙間に洗浄液を供給し、前記回転による遠心力及び毛細管現象によって前記中央に位置する前記隙間から前記基板の四隅に位置する前記隙間に前記洗浄液を広げ、前記隙間全体に洗浄液を満たし、
前記隙間への洗浄液の供給を停止し、前記第1の基板回転数より高い第4の基板回転数で前記基板及び前記除去部材を回転させて前記基板の端面を乾燥させることを特徴とするコート材除去方法である。
Further, according to one embodiment of the present invention, after the coating material on the end surface is removed by filling the entire gap with the cleaning liquid, the supply of the cleaning liquid or the etching liquid to the gap is stopped, and the substrate and the removal member are While rotating, it is possible to dry the end face by introducing gas into the gap from the inside of the substrate and exhausting the gas to the outside of the substrate.
One embodiment of the present invention is to form a coating material on a rectangular substrate,
The liquid contact surface of the removal member is opposed to the end surface of the substrate along the four sides of the substrate, and a gap that causes capillary action is provided between the end surface and the liquid contact surface,
While rotating the substrate and the removing member at a first substrate rotation speed, a cleaning liquid to which pure water is added is supplied to the gap located at the center of each of the four sides of the substrate, and centrifugal force and capillary action due to the rotation are applied. Spreading the cleaning liquid from the gap located at the center to the gap located at the four corners of the substrate, filling the entire gap with the cleaning liquid,
While rotating the substrate and the removing member at a second substrate rotation speed lower than the first substrate rotation speed, a cleaning liquid is supplied to the gaps located at the centers of the four sides of the substrate, and the centrifugal force due to the rotation And spreading the cleaning liquid from the gap located at the center to the gap located at the four corners of the substrate by capillary action, filling the entire gap with the cleaning liquid,
While rotating the substrate and the removal member at a third substrate rotation speed higher than the second substrate rotation speed, a cleaning liquid is supplied to the gaps located at the centers of the four sides of the substrate, and the centrifugal force generated by the rotation And spreading the cleaning liquid from the gap located at the center to the gap located at the four corners of the substrate by capillary action, filling the entire gap with the cleaning liquid,
The supply of the cleaning liquid to the gap is stopped, and the substrate and the removing member are rotated at a fourth substrate rotation speed higher than the first substrate rotation speed to dry the end surface of the substrate. This is a material removal method.

本発明の一態様を適用することで、基板端面のコート材を除去することができる。   By applying one embodiment of the present invention, the coating material on the substrate end surface can be removed.

本発明の一態様に係るコート材除去装置を模式的に示す断面図。Sectional drawing which shows typically the coating material removal apparatus which concerns on 1 aspect of this invention. 図1に示すコート材除去装置の上面図。The top view of the coating material removal apparatus shown in FIG. 図1に示すコート材除去装置における洗浄部材4と基板2の端面の付近を拡大した断面図。Sectional drawing which expanded the vicinity of the cleaning member 4 and the end surface of the board | substrate 2 in the coating material removal apparatus shown in FIG. 図1に示すコート材除去装置の上面図であって基板の平面形状が円形である場合の図。FIG. 2 is a top view of the coating material removing apparatus shown in FIG. 1 when the planar shape of the substrate is circular. 図1に示すコート材除去装置の上面図であって基板の平面形状が円形である場合の図。FIG. 2 is a top view of the coating material removing apparatus shown in FIG. 1 when the planar shape of the substrate is circular.

以下では、本発明の実施の形態について図面を用いて詳細に説明する。ただし、本発明は以下の説明に限定されず、本発明の趣旨及びその範囲から逸脱することなくその形態及び詳細を様々に変更し得ることは、当業者であれば容易に理解される。従って、本発明は以下に示す実施の形態の記載内容に限定して解釈されるものではない。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

図1は、本発明の一態様に係るコート材除去装置を模式的に示す断面図である。図2は、図1に示すコート材除去装置の上面図である。図3は、図1に示すコート材除去装置における洗浄部材4(除去部材ともいう)と基板2の端面の付近を拡大した断面図である。なお、コート材除去装置は、基板2の表面にコート材を形成した後に、そのコート材を基板2の端面2a(基板2の外縁から所定の幅分)から除去する装置であり、詳細には、基板2の端面2aのコート材を洗浄液で完全に除去して基板2の端面を洗浄する装置と、基板2の端面2aのコート材の表面をエッチング液で除去してコート材が所望の膜厚になるまでエッチングする装置の両者を含む。   FIG. 1 is a cross-sectional view schematically showing a coating material removing apparatus according to an aspect of the present invention. FIG. 2 is a top view of the coating material removing apparatus shown in FIG. 3 is an enlarged cross-sectional view of the vicinity of the cleaning member 4 (also referred to as a removal member) and the end face of the substrate 2 in the coating material removing apparatus shown in FIG. The coating material removing apparatus is an apparatus that removes the coating material from the end surface 2a of the substrate 2 (a predetermined width from the outer edge of the substrate 2) after forming the coating material on the surface of the substrate 2. An apparatus for completely removing the coating material on the end surface 2a of the substrate 2 with a cleaning liquid to clean the end surface of the substrate 2, and a coating material for removing the surface of the coating material on the end surface 2a of the substrate 2 with an etching solution. Includes both devices to etch until thick.

図1に示すように、コート材除去装置は回転軸1aを有しており、この回転軸1aの下端部には回転軸1aを回転させる図示せぬ回転機構(例えばモータ)が取り付けられている。回転軸1aの上には保持部材1が設けられている。この保持部材1は、基板2をほぼ水平に保持する機能と、ほぼ水平に保持された基板2上にカップ本体3を保持する機能と、このカップ本体3に取り付けられた洗浄部材4を保持する機能を有している。なお、本実施形態では、平面形状が四角形の基板2を用いるが、平面形状が円形、円形に近い形状又は楕円形等の形状の基板を用いても良く、例えばガラス基板や半導体ウエハ(代表的には、シリコンウエハ)、SOI(Silicon On Insulator)基板等を用いても良い。   As shown in FIG. 1, the coating material removing apparatus has a rotating shaft 1a, and a rotating mechanism (for example, a motor) (not shown) for rotating the rotating shaft 1a is attached to the lower end portion of the rotating shaft 1a. . A holding member 1 is provided on the rotating shaft 1a. The holding member 1 holds the substrate 2 substantially horizontally, holds the cup body 3 on the substantially horizontally held substrate 2, and holds the cleaning member 4 attached to the cup body 3. It has a function. In the present embodiment, the substrate 2 having a square planar shape is used, but a substrate having a planar shape of a circle, a shape close to a circle or an ellipse may be used. For example, a glass substrate or a semiconductor wafer (typically Alternatively, a silicon wafer), an SOI (Silicon On Insulator) substrate, or the like may be used.

保持部材1について詳細に説明する。
保持部材1には複数の基板固定部1bが設けられており、これら基板固定部1bによって基板2をほぼ水平に保持するようになっている。また、保持部材1には複数のカップ固定部1cが設けられており、これらカップ固定部1cには複数のカップ本体保持部材3aの一方端がそれぞれ固定されるようになっている。複数のカップ本体保持部材3aの他方端にはカップ本体3が取り付けられている。保持部材1によって保持されたカップ本体3は、保持部材1によって保持された基板2の表面を覆うように位置され、そのカップ本体3と基板2の表面との間には僅かな隙間が設けられるようになっている。なお、本実施形態では、カップ本体3と基板2の表面との間に僅かな隙間を設けているが、この僅かな隙間を設けずにカップ本体3と基板2の表面とを接触させても良い。この場合、カップ本体2の基板との接触面にクッション性のある材料膜、例えばフッ素樹脂膜を形成することが好ましい。これにより、基板に傷が付くのを抑制できる。
The holding member 1 will be described in detail.
The holding member 1 is provided with a plurality of substrate fixing portions 1b, and the substrate 2 is held substantially horizontally by these substrate fixing portions 1b. The holding member 1 is provided with a plurality of cup fixing portions 1c, and one end of each of the plurality of cup body holding members 3a is fixed to the cup fixing portions 1c. The cup body 3 is attached to the other end of the plurality of cup body holding members 3a. The cup body 3 held by the holding member 1 is positioned so as to cover the surface of the substrate 2 held by the holding member 1, and a slight gap is provided between the cup body 3 and the surface of the substrate 2. It is like that. In the present embodiment, a slight gap is provided between the cup body 3 and the surface of the substrate 2. However, even if the cup body 3 and the surface of the substrate 2 are brought into contact with each other without providing the slight gap, good. In this case, it is preferable to form a cushioning material film such as a fluororesin film on the contact surface of the cup body 2 with the substrate. Thereby, it can suppress that a board | substrate is damaged.

カップ本体3には、洗浄部材4を介して複数の取り付け部4aが取り付けられている。この洗浄部材4は、図2に示すようにカップ本体3の周囲を覆うようにカップ本体3に取り付けられている。洗浄部材4は、図1及び図3に示すようにコート材除去領域である基板2の端面2a(即ち基板の外縁に沿った基板上面の端面2aであって基板の外縁から所定の幅分の領域2bに位置する端面2a)に対向する接液面4bを有している。この接液面4bは洗浄液に接する面である。接液面4bと基板2の端面2aとの間に毛細管現象を引き起こすための隙間4c(図3参照)が設けられるように、保持部材1に洗浄部材4が取り付け部4aによって保持されるようになっている。このため、取り付け部4aは、毛細管現象を引き起こせるように、基板2の端面2aと接液面4bとの隙間4cを適切に保つための高さ調整機構を有している。基板2の端面2aと接液面4bとの隙間4cの間隔は、コート材を除去するプロセスの条件(例えば、洗浄液の種類や粘度、洗浄部材4及び基板2の接液面の濡れ性、基板の回転数)を考慮して毛細管現象を引き起こすことが可能な範囲に適宜設計すればよい。さらに、基板の外縁から所定の幅分の領域2bよりも内側に設けられた領域2c(非洗浄領域2c)は洗浄されないようにするため、非洗浄領域2cにおける洗浄部材4と基板2との間隔4dを、毛細管現象が起きない程度の間隔に設計することが好ましい。このため、少なくとも4c<4dとなるように洗浄部材4を配置することが必要となる。具体例として、基板2の端面2aと接液面4bとの隙間4cの間隔は、0.3mm以下とすればよく、好ましくは0.2mm以下とすればよい。また、詳細は後述するが、間隔を小さくし過ぎると洗浄液やエッチング液の廃液が行いにくくなるおそれがある。このため、基板2の端面2aと接液面4bとの隙間4cの間隔は、好ましくは0.05mm以上とし、より好ましくは0.1mm以上とすればよい。また、非洗浄領域2cにおける洗浄部材4と基板2との間隔4dは、0.5mm以上とすればよく、好ましくは1.0mm以上とすればよい。   A plurality of attachment portions 4 a are attached to the cup body 3 via the cleaning member 4. As shown in FIG. 2, the cleaning member 4 is attached to the cup body 3 so as to cover the periphery of the cup body 3. As shown in FIGS. 1 and 3, the cleaning member 4 is an end surface 2a of the substrate 2 that is a coating material removal region (that is, the end surface 2a of the upper surface of the substrate along the outer edge of the substrate, and a predetermined width from the outer edge of the substrate). It has a liquid contact surface 4b facing the end surface 2a) located in the region 2b. The liquid contact surface 4b is a surface in contact with the cleaning liquid. The cleaning member 4 is held on the holding member 1 by the mounting portion 4a so that a gap 4c (see FIG. 3) for causing a capillary phenomenon is provided between the liquid contact surface 4b and the end surface 2a of the substrate 2. It has become. For this reason, the attachment part 4a has a height adjustment mechanism for appropriately maintaining the gap 4c between the end surface 2a of the substrate 2 and the liquid contact surface 4b so as to cause a capillary phenomenon. The gap 4c between the end surface 2a of the substrate 2 and the liquid contact surface 4b depends on the process conditions for removing the coating material (for example, the type and viscosity of the cleaning liquid, the wettability of the cleaning member 4 and the liquid contact surface of the substrate 2, the substrate In consideration of the number of rotations), it may be appropriately designed within a range in which capillary action can be caused. Further, in order to prevent the region 2c (non-cleaning region 2c) provided inside the region 2b having a predetermined width from the outer edge of the substrate from being cleaned, the distance between the cleaning member 4 and the substrate 2 in the non-cleaning region 2c. It is preferable to design 4d at an interval that does not cause capillary action. For this reason, it is necessary to arrange the cleaning member 4 so that at least 4c <4d. As a specific example, the gap 4c between the end surface 2a of the substrate 2 and the liquid contact surface 4b may be set to 0.3 mm or less, and preferably 0.2 mm or less. Although details will be described later, if the interval is too small, there is a possibility that it becomes difficult to waste the cleaning liquid or the etching liquid. For this reason, the gap 4c between the end surface 2a of the substrate 2 and the liquid contact surface 4b is preferably 0.05 mm or more, and more preferably 0.1 mm or more. In addition, the distance 4d between the cleaning member 4 and the substrate 2 in the non-cleaning region 2c may be 0.5 mm or more, and preferably 1.0 mm or more.

また、図1及び図2に示すように、コート材除去装置は、洗浄液をカップ本体3の上部に設けられた洗浄液溜まり部3bに供給する洗浄液供給ノズル5を有している。この洗浄液供給ノズル5の一端には洗浄液供給源(図示せず)に繋げられており、洗浄液供給ノズル5の他端には洗浄液溜まり部3bに繋げられている。カップ本体3には第1乃至第8の洗浄用ノズル6〜13が設けられており、第1乃至第8の洗浄用ノズル6〜13それぞれの一端は洗浄液溜まり部3bに繋げられている。第1乃至第4の洗浄用ノズル6〜9それぞれの他端は、四角形の基板2の四辺それぞれの中央に位置する隙間4cに繋げられている。第5乃至第8の洗浄用ノズル10〜13それぞれの他端は、四角形の基板2の四隅(角)それぞれに位置する隙間4cに繋げられている。   As shown in FIGS. 1 and 2, the coating material removing apparatus has a cleaning liquid supply nozzle 5 that supplies a cleaning liquid to a cleaning liquid reservoir 3 b provided on the upper part of the cup body 3. One end of the cleaning liquid supply nozzle 5 is connected to a cleaning liquid supply source (not shown), and the other end of the cleaning liquid supply nozzle 5 is connected to the cleaning liquid reservoir 3b. The cup body 3 is provided with first to eighth cleaning nozzles 6 to 13, and one end of each of the first to eighth cleaning nozzles 6 to 13 is connected to the cleaning liquid reservoir 3b. The other end of each of the first to fourth cleaning nozzles 6 to 9 is connected to a gap 4c located at the center of each of the four sides of the square substrate 2. The other ends of the fifth to eighth cleaning nozzles 10 to 13 are connected to gaps 4 c located at the four corners (corners) of the rectangular substrate 2.

また、図1に示すように、コート材除去装置は、ガス(例えば希ガス、窒素ガス、エアー)をカップ本体3に供給するガス供給機構(図示せず)を有している。このガス供給機構によって供給されるガスは、矢印14に示すようにカップ本体3の上部から下方に向けて基板2の表面の中央に供給され、基板2の端面2aと接液面4bとの隙間4cを通って基板2の外縁から外側に排気されるようになっている。   As shown in FIG. 1, the coating material removing apparatus has a gas supply mechanism (not shown) that supplies gas (for example, rare gas, nitrogen gas, air) to the cup body 3. The gas supplied by this gas supply mechanism is supplied from the upper part of the cup body 3 downward to the center of the surface of the substrate 2 as indicated by the arrow 14, and the gap between the end surface 2a of the substrate 2 and the liquid contact surface 4b is supplied. The air is exhausted from the outer edge of the substrate 2 through 4c.

また、図1に示すように、コート材除去装置は、基板2の裏面に洗浄液を供給するためのバックリンス用ノズル16を有しており、このバックリンス用ノズル16には洗浄液供給源(図示せず)が接続されている。   Further, as shown in FIG. 1, the coating material removing apparatus has a back rinse nozzle 16 for supplying a cleaning liquid to the back surface of the substrate 2, and a cleaning liquid supply source (see FIG. (Not shown) is connected.

また、コート材除去装置は、回転軸1aを回転させる前記回転機構、洗浄液供給ノズル5に洗浄液供給源、及びガスをカップ本体3に供給するガス供給機構それぞれを制御する制御部(図示せず)を有している。この制御部は、前記回転機構の回転速度、回転時間及び回転のタイミング等を後述するように制御し、前記洗浄液供給源の供給量、供給時間及び供給のタイミング等を後述するように制御し、前記ガス供給機構の供給量、供給時間及び供給のタイミング等を後述するように制御するものである。   In addition, the coating material removing apparatus includes a control unit (not shown) that controls the rotating mechanism that rotates the rotating shaft 1a, the cleaning liquid supply source to the cleaning liquid supply nozzle 5, and the gas supply mechanism that supplies gas to the cup body 3. have. The control unit controls the rotation speed, rotation time, and rotation timing of the rotation mechanism as described later, and controls the supply amount, supply time, supply timing, and the like of the cleaning liquid supply source as described later. The supply amount, supply time, supply timing, etc. of the gas supply mechanism are controlled as will be described later.

次に、上記のコート材除去装置によって基板2の端面のコート材を除去する方法について図1乃至図3を参照しつつ説明する。   Next, a method for removing the coating material on the end face of the substrate 2 by the coating material removing apparatus will be described with reference to FIGS.

まず、表面にコート材(図示せず)が形成された基板2を用意する。コート材としては、種々の材料膜を用いることができる。例えばフォトリソグラフィ工程で用いるフォトレジスト膜を用いたり、層間膜として用いられることが多いポリイミド、アクリル、エポキシ等の樹脂材料、またはシロキサンを含む絶縁膜を用いたり、酸化珪素、窒化珪素、酸化窒化珪素、窒化酸化珪素、酸化アルミニウム、窒化アルミニウム等の無機絶縁膜を用いることができる。なお、本明細書において、酸化窒化珪素とは、その組成として、窒素よりも酸素の含有量が多い物質を指し、また、窒化酸化珪素とは、その組成として、酸素よりも窒素の含有量が多い物質を指す。また、本明細書において、シロキサンとは、シリコンと酸素との結合で骨格構造が構成され、置換基に少なくとも水素を含む材料、または置換基にフッ素、アルキル基、もしくは芳香族炭化水素のうち少なくとも一種を有する材料を指す。
これら材料膜の形成方法は、特に限定されるものではない。例えば、無機材料であればCVD(Chemical vapor deposition)法、スパッタ法等を用いて形成すればよい。また、有機材料であれば、その材料の物性に応じて、蒸着法、液滴吐出法、インクジェット法、スピンコート法、ロールコート法、スロットコート法等を適宜用いて形成することができる。
First, a substrate 2 having a coating material (not shown) formed on the surface is prepared. Various material films can be used as the coating material. For example, a photoresist film used in a photolithography process, a resin material such as polyimide, acrylic, or epoxy, which is often used as an interlayer film, or an insulating film containing siloxane, silicon oxide, silicon nitride, silicon oxynitride An inorganic insulating film such as silicon nitride oxide, aluminum oxide, or aluminum nitride can be used. Note that in this specification, silicon oxynitride refers to a substance having a higher oxygen content than nitrogen as the composition, and silicon nitride oxide has a nitrogen content as compared to oxygen as the composition. Refers to many substances. In this specification, siloxane means a material in which a skeleton structure is formed by a bond of silicon and oxygen and includes at least hydrogen as a substituent, or at least a fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material having one kind.
The method for forming these material films is not particularly limited. For example, an inorganic material may be formed using a CVD (Chemical Vapor Deposition) method, a sputtering method, or the like. Further, in the case of an organic material, it can be formed by appropriately using a vapor deposition method, a droplet discharge method, an ink jet method, a spin coating method, a roll coating method, a slot coating method, or the like depending on the physical properties of the material.

次に、この基板2を保持部材1の複数の基板固定部1bによってほぼ水平に保持する。次いで、複数のカップ固定部1c及び複数のカップ本体保持部材3aによってカップ本体3を保持部材1に保持し、このカップ本体3によって基板2の表面を覆い、取り付け部4aによって洗浄部材4を保持部材1に保持する。そして、そのカップ本体3と基板2の表面との間に僅かな隙間を設け、洗浄部材4の接液面4bと基板2の端面2aとの間に隙間4c(図3参照)を設ける。この際、基板2の端面2aと接液面4bとの隙間4cが毛細管現象を引き起こすように取り付け部4aによって高さ調整が行われる。   Next, the substrate 2 is held substantially horizontally by the plurality of substrate fixing portions 1 b of the holding member 1. Next, the cup body 3 is held on the holding member 1 by the plurality of cup fixing portions 1c and the plurality of cup body holding members 3a, the surface of the substrate 2 is covered by the cup body 3, and the cleaning member 4 is held by the mounting portion 4a. Hold at 1. A slight gap is provided between the cup body 3 and the surface of the substrate 2, and a gap 4 c (see FIG. 3) is provided between the liquid contact surface 4 b of the cleaning member 4 and the end surface 2 a of the substrate 2. At this time, the height is adjusted by the mounting portion 4a so that the gap 4c between the end surface 2a of the substrate 2 and the liquid contact surface 4b causes a capillary phenomenon.

次に、回転機構によって回転軸1aを回転させることにより保持部材1とともに基板2を回転させ、洗浄液供給源によって洗浄液を洗浄液供給ノズル5に供給する。これにより、洗浄液供給ノズル5の洗浄液が矢印15に示すように洗浄液溜まり部3bに溜められ、この洗浄液溜まり部3bに溜められた洗浄液が第1乃至第8の洗浄用ノズル6〜13それぞれに遠心力によって分配される。その結果、洗浄液は、第1乃至第4の洗浄用ノズル6〜9を通して基板2の四辺それぞれの中央に位置する隙間4cに供給されるとともに第5乃至第8の洗浄用ノズル10〜13を通して基板2の四隅それぞれに位置する隙間4cに供給される。この隙間4cに供給された図3に示す洗浄液17は、毛細管現象によって隙間4cの全体に広げられ満たされる。基板2の四辺それぞれの中央に位置する隙間4cに供給された洗浄液は、基板2の回転による遠心力によって基板2の四隅の方向に流される。   Next, the substrate 2 is rotated together with the holding member 1 by rotating the rotating shaft 1a by the rotation mechanism, and the cleaning liquid is supplied to the cleaning liquid supply nozzle 5 by the cleaning liquid supply source. As a result, the cleaning liquid of the cleaning liquid supply nozzle 5 is stored in the cleaning liquid reservoir 3b as indicated by the arrow 15, and the cleaning liquid stored in the cleaning liquid reservoir 3b is centrifuged in the first to eighth cleaning nozzles 6 to 13, respectively. Distributed by force. As a result, the cleaning liquid is supplied to the gap 4c located at the center of each of the four sides of the substrate 2 through the first to fourth cleaning nozzles 6 to 9, and the substrate through the fifth to eighth cleaning nozzles 10 to 13. 2 is supplied to the gaps 4c located at the four corners. The cleaning liquid 17 shown in FIG. 3 supplied to the gap 4c is spread and filled in the entire gap 4c by capillary action. The cleaning liquid supplied to the gap 4 c located at the center of each of the four sides of the substrate 2 is caused to flow in the directions of the four corners of the substrate 2 by centrifugal force due to the rotation of the substrate 2.

なお、第1乃至第4の洗浄用ノズル6〜9それぞれの内径を、第5乃至第8の洗浄用ノズル10〜13それぞれの内径より大きくすることが好ましい。例えば、第1乃至第4の洗浄用ノズル6〜9それぞれの内径を2.5mmとし、第5乃至第8の洗浄用ノズル10〜13それぞれの内径を1.5mmとする。これにより、基板2の四辺それぞれの中央に位置する隙間4cに供給される洗浄液の量を、基板2の四隅それぞれに位置する隙間4cに供給される洗浄液の量より多くすることができる。   The inner diameters of the first to fourth cleaning nozzles 6 to 9 are preferably larger than the inner diameters of the fifth to eighth cleaning nozzles 10 to 13, respectively. For example, the inner diameter of each of the first to fourth cleaning nozzles 6 to 9 is 2.5 mm, and the inner diameter of each of the fifth to eighth cleaning nozzles 10 to 13 is 1.5 mm. Thereby, the amount of the cleaning liquid supplied to the gap 4 c located at the center of each of the four sides of the substrate 2 can be made larger than the amount of the cleaning liquid supplied to the gap 4 c located at each of the four corners of the substrate 2.

このようにすることが好ましい理由は次の通りである。
第1乃至第8の洗浄用ノズル6〜13それぞれの内径を仮に同じにすると、第1乃至第4の洗浄用ノズル6〜9によって基板2の四辺の中央に位置する隙間に供給される洗浄液が適量であっても、第5乃至第8の洗浄用ノズル10〜13によって基板2の四隅に位置する隙間に供給される洗浄液の量が多くなりすぎて基板外への廃液が間に合わず、基板の四隅で洗浄液が非洗浄領域に入り込む可能性がある一方、第5乃至第8の洗浄用ノズル10〜13によって基板2の四隅に位置する隙間に供給される洗浄液が適量であっても、第1乃至第4の洗浄用ノズル6〜9によって基板2の四辺の中央に位置する隙間に供給される洗浄液の量が少なすぎて洗浄性能の低下を招く可能性があるからである。これらの現象は、四隅が中央に比べて基板中心からの距離が長くなり、四隅と中央とにおける遠心力(流速)に差が生じることが原因と考えられる。
The reason why this is preferable is as follows.
If the inner diameters of the first to eighth cleaning nozzles 6 to 13 are the same, the cleaning liquid supplied to the gaps located at the center of the four sides of the substrate 2 by the first to fourth cleaning nozzles 6 to 9 is used. Even if the amount is appropriate, the amount of the cleaning liquid supplied to the gaps located at the four corners of the substrate 2 by the fifth to eighth cleaning nozzles 10 to 13 becomes too large, and the waste liquid outside the substrate is not in time. While there is a possibility that the cleaning liquid may enter the non-cleaning region at the four corners, even if the cleaning liquid supplied to the gaps positioned at the four corners of the substrate 2 by the fifth to eighth cleaning nozzles 10 to 13 is an appropriate amount, This is because the amount of the cleaning liquid supplied to the gap located at the center of the four sides of the substrate 2 by the fourth cleaning nozzles 6 to 9 is so small that the cleaning performance may be deteriorated. These phenomena are considered to be caused by the fact that the distance from the center of the substrate is longer at the four corners than at the center, and the centrifugal force (flow velocity) at the four corners and the center is different.

また、洗浄液は、コート材を溶解するための溶剤であり、例えばシンナー、MEK(メチルエチルケトン)、アセトン又は酢酸ブチル水溶性EBR剤PK−CRD(パーカー社製)等を用いることができる。また、コート材としてタングステン膜を用いた場合、TMAH(水酸化テトラメチルアンモニウム)水溶液を用いることにより、基板の端面2aのみをエッチングすることができる。この場合は、レジストを用いた露光やエッチング、レジスト剥離の工程が不要となるので、製造コストを低減することができる。   The cleaning liquid is a solvent for dissolving the coating material, and for example, thinner, MEK (methyl ethyl ketone), acetone or butyl acetate water-soluble EBR agent PK-CRD (manufactured by Parker) can be used. When a tungsten film is used as the coating material, only the end face 2a of the substrate can be etched by using a TMAH (tetramethylammonium hydroxide) aqueous solution. In this case, exposure, etching, and resist stripping steps using a resist are not necessary, so that manufacturing costs can be reduced.

また、上記のように隙間4cに洗浄液を供給しながら、ガス供給機構によってガスをカップ本体3の上部から下方に向けて基板2の表面の中央に供給し、その中央から隙間4cに供給する。このガスによって隙間4cに供給された洗浄液が洗浄部材4の接液面4bより基板2の内側に入り込むのを抑制できる。   Further, while supplying the cleaning liquid to the gap 4c as described above, the gas is supplied from the upper part of the cup body 3 downward to the center of the surface of the substrate 2 by the gas supply mechanism, and is supplied from the center to the gap 4c. The cleaning liquid supplied to the gap 4 c by this gas can be prevented from entering the inside of the substrate 2 from the liquid contact surface 4 b of the cleaning member 4.

上記のように隙間4cの全体に洗浄液を広げて満たし、その洗浄液によってコート材を溶解する。その後、溶解されたコート材及び洗浄液は基板2の回転による遠心力によって基板2の端面2aから外側へ廃棄される。このようにして洗浄工程が行われ、基板2の端面2aのコート材を除去することができる。   As described above, the cleaning liquid is spread and filled in the entire gap 4c, and the coating material is dissolved by the cleaning liquid. Thereafter, the dissolved coating material and cleaning liquid are discarded from the end surface 2 a of the substrate 2 to the outside by centrifugal force generated by the rotation of the substrate 2. In this way, the cleaning process is performed, and the coating material on the end surface 2a of the substrate 2 can be removed.

次に、洗浄液の隙間4cへの供給を停止し、基板2の回転速度を高くすることにより、基板2の端面2aを乾燥させる。このとき、ガス供給機構によって基板2の内側から隙間4cに導入されたガス(希ガス、窒素ガス、エアー等)を基板2の外縁から外側に排気しながら基板2を高速回転させることにより、基板2の端面2aを素早く乾燥させることが好ましい。隙間4cが毛細管現象を引き起こす程度のものであるため、ガスが加圧状態となり、乾燥速度を高めることができる。このようにして乾燥工程が行われる。なお、ガス供給機構を用いなくても乾燥させることは可能である。   Next, the supply of the cleaning liquid to the gap 4c is stopped, and the end surface 2a of the substrate 2 is dried by increasing the rotation speed of the substrate 2. At this time, the substrate 2 is rotated at high speed while the gas (noble gas, nitrogen gas, air, etc.) introduced into the gap 4c from the inside of the substrate 2 by the gas supply mechanism is exhausted from the outer edge of the substrate 2 to the outside. It is preferable to quickly dry the second end face 2a. Since the gap 4c is of a level that causes capillary action, the gas is pressurized and the drying rate can be increased. Thus, a drying process is performed. In addition, it is possible to dry without using a gas supply mechanism.

なお、上記の洗浄工程と乾燥工程を複数回繰り返しても良い。
また、純水を混合した洗浄液を用いても良い。
In addition, you may repeat said washing | cleaning process and drying process in multiple times.
Moreover, you may use the washing | cleaning liquid which mixed the pure water.

また、上記のように基板2の端面2aを洗浄するのに加えて、洗浄液供給源によってバックリンス用ノズル16に洗浄液を供給し、このバックリンス用ノズル16から基板2の裏面に洗浄液を供給することで基板2の裏面を洗浄しても良い。これにより、基板2の裏面に付着したコート材を除去することができる。   In addition to cleaning the end surface 2a of the substrate 2 as described above, the cleaning liquid is supplied to the back rinse nozzle 16 by the cleaning liquid supply source, and the cleaning liquid is supplied from the back rinse nozzle 16 to the back surface of the substrate 2. Thus, the back surface of the substrate 2 may be cleaned. Thereby, the coating material adhering to the back surface of the substrate 2 can be removed.

また、コート材がフォトレジスト又は感光性ポリイミドのような紫外線(UV)によって感光する材料である場合は、上記のように基板2の端面2aを洗浄しながら、基板2の端面2aにUV照射してコート材を露光しても良い。洗浄工程及び乾燥工程の後に、露光されたコート材を現像して除去することにより、洗浄後に基板の端面2aに残されたコート材を完全に除去することができる。ただし、この場合は、基板2の端面2a上に位置する洗浄部材4やカップ本体保持部材3a、取り付け部4aなどをUVが透過する透明な材料で作製しておく必要がある。   Further, when the coating material is a material sensitive to ultraviolet rays (UV) such as photoresist or photosensitive polyimide, UV irradiation is applied to the end surface 2a of the substrate 2 while cleaning the end surface 2a of the substrate 2 as described above. The coating material may be exposed. By developing and removing the exposed coating material after the cleaning step and the drying step, the coating material remaining on the end surface 2a of the substrate after the cleaning can be completely removed. However, in this case, the cleaning member 4, the cup body holding member 3a, the mounting portion 4a, and the like positioned on the end surface 2a of the substrate 2 must be made of a transparent material that transmits UV.

また、第1乃至第4の洗浄用ノズル6〜9それぞれの他端が繋げられている基板2の四辺それぞれの中央に位置する隙間4cは、前記中央以外に位置する隙間4c(例えば基板2の四隅それぞれに位置する隙間4c)より大きく形成されていても良い。具体的には、前記中央に位置する洗浄部材4の接液面4bに溝を設けることにより、前記中央に位置する隙間4cを前記中央以外に位置する隙間4cより大きくして、その隙間より得られる断面積を大きくしても良い。これにより、第1乃至第4の洗浄用ノズル6〜9から前記溝内に洗浄液が供給されるため、基板2の四辺それぞれの中央に位置する隙間4cに供給される洗浄液の量を適切に調整することができる。詳細には、前記溝を形成することにより、前記中央に位置する隙間4cに供給される洗浄液の量が、前記四隅に位置する隙間4cに供給される洗浄液の量に対して多くなりすぎるのを抑制できる。   Further, the gap 4c located at the center of each of the four sides of the substrate 2 to which the other ends of the first to fourth cleaning nozzles 6 to 9 are connected is a gap 4c located at a position other than the center (for example, of the substrate 2). It may be formed larger than the gap 4c) located at each of the four corners. Specifically, by providing a groove on the liquid contact surface 4b of the cleaning member 4 located at the center, the gap 4c located at the center is made larger than the gap 4c located at other than the center, and is obtained from the gap. The resulting cross-sectional area may be increased. Accordingly, since the cleaning liquid is supplied into the groove from the first to fourth cleaning nozzles 6 to 9, the amount of the cleaning liquid supplied to the gap 4c located at the center of each of the four sides of the substrate 2 is appropriately adjusted. can do. Specifically, by forming the groove, the amount of the cleaning liquid supplied to the gap 4c located at the center is excessively larger than the amount of the cleaning liquid supplied to the gap 4c located at the four corners. Can be suppressed.

前記中央に位置する隙間4cに供給される洗浄液の量が多くなりすぎる理由は、次の通りである。基板の四辺の中央では遠心力が基板の四辺と垂直方向に向かう。よって、前記中央に位置する隙間に供給される洗浄液は、基板の四隅に向かって流れにくく溜まりやすいためである。そこで、前記溝を形成することにより、四隅に向かって流れにくい四辺の中央の洗浄液を溝に取り込むことができ、それにより中央から四隅への洗浄液の流れを作りやすくすることができる。   The reason why the amount of the cleaning liquid supplied to the gap 4c located at the center is excessively large is as follows. Centrifugal force is directed perpendicular to the four sides of the substrate at the center of the four sides of the substrate. Therefore, the cleaning liquid supplied to the gap located at the center is difficult to flow toward the four corners of the substrate and is likely to accumulate. Therefore, by forming the groove, the cleaning liquid at the center of the four sides that does not easily flow toward the four corners can be taken into the groove, thereby making it easy to create a flow of the cleaning liquid from the center to the four corners.

また、洗浄部材4の接液面4bを、図2に示す矢印のように基板2の四辺の中央から四隅の方向に研磨することで、接液面4bに微細な溝を形成しても良い。これにより、接液面4bの濡れ性が悪い場合でも、隙間4cにおいて基板2の四辺の中央から四隅に洗浄液が広がる(流れる)ように制御することができる。その結果、洗浄性能を向上させることができる。なお、この効果を得るためには、基板外周に沿う方向に溝を形成していればよく、溝を形成する際の研磨の方向は図2に示す方向に限定されるものではない。例えば、基板四隅から、四辺各辺の中央の方向に研磨して溝を形成してもよい。   Further, by polishing the liquid contact surface 4b of the cleaning member 4 from the center of the four sides of the substrate 2 to the four corners as shown by arrows in FIG. 2, fine grooves may be formed on the liquid contact surface 4b. . Thereby, even when the wettability of the liquid contact surface 4b is poor, the cleaning liquid can be controlled to spread (flow) from the center of the four sides of the substrate 2 to the four corners in the gap 4c. As a result, the cleaning performance can be improved. In addition, in order to acquire this effect, the groove | channel should just be formed in the direction along a board | substrate outer periphery, and the direction of grinding | polishing at the time of forming a groove | channel is not limited to the direction shown in FIG. For example, the grooves may be formed by polishing from the four corners of the substrate toward the center of each side of the four sides.

また、保持部材1によって基板2をほぼ水平に保持する際、基板2を真空吸着して保持しても良い。これにより、基板2の反りを矯正することができ、より均一に洗浄できる効果が得られる。   Further, when the substrate 2 is held almost horizontally by the holding member 1, the substrate 2 may be held by vacuum suction. Thereby, the curvature of the board | substrate 2 can be corrected and the effect which can wash | clean more uniformly is acquired.

なお、本実施形態では、基板2の回転による遠心力によって基板2の端面2aから外側へ洗浄液を廃棄しているが、基板2を回転させず、基板2の表面の中央から端面2aに向けてガスを供給することで端面2aと接液面4bとの隙間4cを通って基板2の外縁から外側に洗浄液を廃棄しても良いし、基板2の外縁から隙間4内の洗浄液を吸引することで廃棄しても良い。エアー供給や洗浄液の吸引(バキューム)を用いることにより、基板2を回転させなくても基板2の端面2aから外側へ洗浄液を廃棄することができる。   In the present embodiment, the cleaning liquid is discarded from the end surface 2a of the substrate 2 to the outside by the centrifugal force caused by the rotation of the substrate 2. However, the substrate 2 is not rotated and is directed from the center of the surface of the substrate 2 toward the end surface 2a. By supplying gas, the cleaning liquid may be discarded from the outer edge of the substrate 2 through the gap 4c between the end surface 2a and the liquid contact surface 4b, or the cleaning liquid in the gap 4 is sucked from the outer edge of the substrate 2. Can be discarded. By using air supply or cleaning liquid suction (vacuum), the cleaning liquid can be discarded from the end surface 2a of the substrate 2 to the outside without rotating the substrate 2.

また、本実施形態では、基板2の外縁に沿った基板上面及び基板側面の端面2aに洗浄部材4を配置して基板上面及び基板側面の端面2aのコート材を除去しているが、基板下面の端面の下に洗浄部材を配置して基板下面の端面のコート材を除去することも可能である。この場合は、バックリンス用ノズルを基板上面側に配置し、基板の上面(表面)に洗浄液を供給することで基板2の表面を洗浄しても良い。これにより、基板2の表面に付着したコート材を除去することができる。   In this embodiment, the cleaning member 4 is disposed on the substrate upper surface and the side surface end surface 2a along the outer edge of the substrate 2 to remove the coating material on the substrate upper surface and substrate side surface 2a. It is also possible to dispose the cleaning member below the end surface of the substrate and remove the coating material on the end surface of the lower surface of the substrate. In this case, the surface of the substrate 2 may be cleaned by disposing a back rinse nozzle on the upper surface side of the substrate and supplying a cleaning liquid to the upper surface (surface) of the substrate. Thereby, the coating material adhering to the surface of the substrate 2 can be removed.

また、本実施形態では、基板上面及び基板側面の端面2aに洗浄部材4を配置して基板上面及び基板側面の端面2aのコート材を除去しているが、基板上面、基板下面、及び基板側面の端面それぞれに洗浄部材を配置して基板上面、基板下面、及び基板側面それぞれの端面のコート材を除去することも可能である。また、洗浄部材4の配置は、基板2の外縁に沿うように設ければよいが、基板2としてガラス基板のような四角形の基板を用いる場合は、四隅近傍の領域を除いて洗浄部材4を配置することが好ましい。   In the present embodiment, the cleaning member 4 is disposed on the end surface 2a on the upper surface and the side surface of the substrate to remove the coating material on the end surface 2a on the upper surface and the side surface of the substrate. It is also possible to dispose the coating material on the end surfaces of the substrate upper surface, the substrate lower surface, and the substrate side surface by disposing a cleaning member on each of the end surfaces. In addition, the cleaning member 4 may be disposed along the outer edge of the substrate 2, but when a square substrate such as a glass substrate is used as the substrate 2, the cleaning member 4 is removed except for the regions near the four corners. It is preferable to arrange.

また、本実施形態では、コート材除去装置が第1乃至第8の洗浄用ノズル6〜13を有しているが、第5乃至第8の洗浄用ノズル10〜13は必ずしも有していなくても良い。第5乃至第8の洗浄用ノズル10〜13を有さないコート材除去装置であっても、コート材の状態によっては基板の端面のコート材を良好に除去することができる。また、第1乃至第4の洗浄用ノズル6〜9についても、4つ全て設けることが必須ではなく、適宜数を変更してもよい。同様に、第5乃至第8の洗浄用ノズル10〜13についても、4隅全てに設ける必要はなく、適宜数を変更してもよい。例えば、4隅のうち互いに対向する2隅である第5の洗浄用ノズル10と、第7の洗浄用ノズル12にのみ設けるようにしてもよい。   Further, in this embodiment, the coating material removing apparatus has the first to eighth cleaning nozzles 6 to 13, but the fifth to eighth cleaning nozzles 10 to 13 are not necessarily included. Also good. Even with the coating material removing apparatus that does not have the fifth to eighth cleaning nozzles 10 to 13, the coating material on the end face of the substrate can be satisfactorily removed depending on the state of the coating material. Further, it is not essential to provide all four of the first to fourth cleaning nozzles 6 to 9, and the number may be changed as appropriate. Similarly, the fifth to eighth cleaning nozzles 10 to 13 do not have to be provided at all four corners, and the number may be changed as appropriate. For example, only the fifth cleaning nozzle 10 and the seventh cleaning nozzle 12 which are two corners facing each other among the four corners may be provided.

なお、図2においては基板の平面形状が四角形のときに対応したコート材除去装置の上面図を示しているが、基板の平面形状が円形である場合は、例えば図4、図5に示すように洗浄用ノズルを配置すればよい。図4においては、3つの洗浄用ノズル101、102、103を有するコート材除去装置の上面図を示し、図5においては、4つの洗浄用ノズル104、105、106、107を有するコート材除去装置の上面図を示している。このように洗浄用ノズルを設ける数は、基板の形状に依存するものではなく、適宜単数又は複数設ければよい。   2 shows a top view of the coating material removing apparatus corresponding to the case where the planar shape of the substrate is square, but when the planar shape of the substrate is circular, for example, as shown in FIGS. A cleaning nozzle may be disposed on the surface. 4 shows a top view of a coating material removing apparatus having three cleaning nozzles 101, 102, 103, and FIG. 5 shows a coating material removing apparatus having four cleaning nozzles 104, 105, 106, 107. FIG. The number of cleaning nozzles provided in this way does not depend on the shape of the substrate, and may be one or more as appropriate.

本実施形態によれば、従来の洗浄装置に比べて簡単な装置構造とすることができるため、装置の製造コストを低減することができる。また、従来の洗浄装置に比べて高い洗浄性能を得ることができる。
また、本実施形態では、基板2の端面2aと接液面4bとの隙間4cに洗浄液を供給し、毛細管現象によって隙間4cの全体に洗浄液を満たすことにより、基板2の端面2aのコート材を除去するため、洗浄液の使用量を従来技術に比べて飛躍的に少なくすることができる。
According to this embodiment, since the apparatus structure can be simpler than that of a conventional cleaning apparatus, the manufacturing cost of the apparatus can be reduced. In addition, higher cleaning performance can be obtained as compared with conventional cleaning apparatuses.
Further, in the present embodiment, the cleaning liquid is supplied to the gap 4c between the end surface 2a of the substrate 2 and the liquid contact surface 4b, and the entire gap 4c is filled by the capillary phenomenon, so that the coating material for the end surface 2a of the substrate 2 is obtained. Since it is removed, the amount of cleaning liquid used can be drastically reduced as compared with the prior art.

また、洗浄部材4の接液面4bと基板2の端面2aとの隙間4cは毛細管現象を引き起こす程度の隙間であれば良いが、この隙間4cは狭いほど洗浄液の使用量を少なくすることができるとともに安定的に毛細管現象を引き起こすことができる。また、基板2の端面2aのコート材を除去する際の洗浄液の使用量を少なくすることにより、基板2の非洗浄領域のコート材に洗浄液が吸われることを抑制でき、その結果、基板2の非洗浄領域に残されるコート材の端部の盛り上がりを小さくすることができる。但し、隙間4cを小さくし過ぎると遠心力による廃液が行いにくくなるおそれがある。このため、基板2の端面2aと接液面4bとの隙間4cの間隔は、0.05mm以上0.30mm以下とすればよく、好ましくは0.10mm以上0.20mm以下とすることが好ましい。   The gap 4c between the liquid contact surface 4b of the cleaning member 4 and the end surface 2a of the substrate 2 may be a gap that causes a capillary phenomenon. However, the narrower the gap 4c, the smaller the amount of cleaning liquid used. At the same time, capillary action can be caused stably. Further, by reducing the amount of the cleaning liquid used when removing the coating material on the end surface 2a of the substrate 2, it is possible to suppress the cleaning liquid from being sucked into the coating material in the non-cleaning region of the substrate 2, and as a result, The rise of the end portion of the coating material left in the non-cleaning region can be reduced. However, if the gap 4c is too small, it may be difficult to perform waste liquid due to centrifugal force. Therefore, the gap 4c between the end surface 2a of the substrate 2 and the liquid contact surface 4b may be 0.05 mm or more and 0.30 mm or less, and preferably 0.10 mm or more and 0.20 mm or less.

図1〜図3に示すコート材除去装置を用いて四角形の基板2の端面2aのコート材を除去する実施例について説明する。表1は、洗浄レシピの一例を示すものである。なお、本実施例では、コート材としてレジストを用い、基板として5インチのガラス基板を用い、洗浄液として東京応化工業株式会社製のOK73シンナー(プロピレングリコールモノメチルエーテル70重量%、プロピレングリコールモノメチルエーテルアセテート30重量%)を用いている。なお、レジストは、スピンコート法(湿式法)により基板上に成膜している。   An embodiment in which the coating material on the end surface 2a of the square substrate 2 is removed using the coating material removing apparatus shown in FIGS. Table 1 shows an example of the cleaning recipe. In this example, a resist is used as a coating material, a 5-inch glass substrate is used, and OK73 thinner (70% by weight of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate 30 manufactured by Tokyo Ohka Kogyo Co., Ltd.) is used as a cleaning liquid. % By weight). Note that the resist is formed on the substrate by a spin coating method (wet method).

Figure 2011086881
Figure 2011086881

基板2の端面2aのコート材(レジスト)を除去するにあたり、洗浄レシピの条件が不適切であると、基板表面の洗浄領域(端面2a)との境界付近におけるコート材の非洗浄領域2cに洗浄液が浸潤し、その領域が盛り上がってしまうおそれがある。そこで、本実施例では表1に示すように、ステップ1,2では、ステップ3,4に比べ基板を高回転させながら、基板の端面2aと洗浄部材の接液面4bとの隙間4cに純水を添加した洗浄液を供給して処理する。これにより、基板表面の洗浄領域(端面2a)と非洗浄領域との境界線においてコート材の盛り上がりを半分に軽減できる。その原因は、洗浄液に純水を添加したことによる洗浄液の揮発性を低下させたこと、コート材に対する溶解速度を低下させたこと、さらに洗浄液に純水を添加したことで供給流量が増大し、基板の高回転での処理が可能になること、溶解したコート材を遠心力によって引き延ばす事が可能となることと考えられる。   When the coating material (resist) on the end surface 2a of the substrate 2 is removed, if the conditions of the cleaning recipe are inappropriate, the cleaning liquid is applied to the non-cleaning region 2c of the coating material near the boundary with the cleaning region (end surface 2a) on the substrate surface. May infiltrate and swell the area. Therefore, in this embodiment, as shown in Table 1, in steps 1 and 2, the substrate is rotated at a higher speed than in steps 3 and 4, while the gap 4c between the end surface 2a of the substrate and the liquid contact surface 4b of the cleaning member is pure. A cleaning solution to which water has been added is supplied for processing. Thereby, the rising of the coating material can be reduced to half at the boundary line between the cleaning region (end surface 2a) and the non-cleaning region on the substrate surface. The cause is that the volatility of the cleaning liquid is reduced by adding pure water to the cleaning liquid, the dissolution rate with respect to the coating material is decreased, and the supply flow rate is increased by adding pure water to the cleaning liquid, It is considered that the substrate can be processed at a high rotation, and the dissolved coating material can be extended by centrifugal force.

次に、ステップ5,6では、ステップ3,4に比べて基板の回転速度を高くして洗浄を行う。その理由は、低回転では遠心力が弱まり、基板中心に向かって洗浄液が広がり易くなり、洗浄範囲が広がってしまうからである。この現象を利用し、ステップ3〜6では、洗浄範囲を段階的に基板外周に向かって小さくすることで、洗浄液の供給量のバラツキによって突発的に非洗浄領域にはみ出た洗浄液によりコート材が溶解されることを防止でき、洗浄後に洗浄領域(端面2a)にコート材が残る不良を低減又は防止することができる。   Next, in steps 5 and 6, cleaning is performed at a higher substrate rotation speed than in steps 3 and 4. The reason is that the centrifugal force is weakened at a low rotation, and the cleaning liquid is likely to spread toward the center of the substrate, so that the cleaning range is expanded. Using this phenomenon, in steps 3 to 6, the coating material is dissolved by the cleaning liquid that suddenly protrudes into the non-cleaning area due to variations in the supply amount of the cleaning liquid by gradually reducing the cleaning range toward the substrate periphery. It is possible to prevent the coating material from remaining in the cleaning region (end surface 2a) after cleaning.

次に、ステップ7,8では、基板の端面2aへの洗浄液の供給及び基板の裏面への洗浄液の供給を停止し、基板を1000rpmの非常に高い速度で回転させて一旦乾燥処理を入れる。これにより、コート材を遠心力により基板外周へと引き延ばすことができ、その結果、基板表面の洗浄領域(端面2a)と非洗浄領域との境界線が基板外周へと引き延ばされる。   Next, in Steps 7 and 8, the supply of the cleaning liquid to the end surface 2a of the substrate and the supply of the cleaning liquid to the back surface of the substrate are stopped, and the substrate is rotated at a very high speed of 1000 rpm to once perform a drying process. As a result, the coating material can be extended to the outer periphery of the substrate by centrifugal force, and as a result, the boundary line between the cleaning region (end surface 2a) on the substrate surface and the non-cleaning region is extended to the outer periphery of the substrate.

次に、ステップ9,10で仕上げの洗浄を行い、ステップ11〜13で基板を乾燥させて終了する。   Next, finishing cleaning is performed in steps 9 and 10, and the substrate is dried in steps 11 to 13, and the process is terminated.

なお、本実施例では、ステップ9,10の基板の回転速度をステップ5,6と同一にしているが、ステップ9,10の基板の回転速度をステップ5,6のそれより高くしても良い。   In this embodiment, the rotation speed of the substrate in steps 9 and 10 is the same as that in steps 5 and 6. However, the rotation speed of the substrate in steps 9 and 10 may be higher than that in steps 5 and 6. .

また、基板の裏面洗浄の時間に関しては、コート材を塗布した塗布装置の性能(基板裏面へのコート剤の回り込みの有無や、塗布装置の面積)、コート材の膜厚、コート材のプリベーク時間、コート材のプリベーク温度等を考慮して、適切な時間に設定することが好ましい。   In addition, with regard to the time for cleaning the back surface of the substrate, the performance of the coating device applied with the coating material (whether or not the coating agent wraps around the back surface of the substrate and the area of the coating device), the coating material film thickness, and the coating material pre-bake time In consideration of the pre-baking temperature of the coating material, etc., it is preferable to set the time appropriately.

1 保持部材
1a 回転軸
1b 基板固定部
1c カップ固定部
2 基板
2a 端面
2b 基板の外縁から所定の幅分の領域(洗浄領域)
2c 非洗浄領域
3 カップ本体
3a カップ本体保持部材
3b 洗浄液溜まり部
4 洗浄部材
4a 取り付け部
4b 接液面
4c 隙間
5 洗浄液供給ノズル
6 第1の洗浄用ノズル
7 第2の洗浄用ノズル
8 第3の洗浄用ノズル
9 第4の洗浄用ノズル
10 第5の洗浄用ノズル
11 第6の洗浄用ノズル
12 第7の洗浄用ノズル
13 第8の洗浄用ノズル
14,15 矢印
16 バックリンス用ノズル
17 洗浄液
DESCRIPTION OF SYMBOLS 1 Holding member 1a Rotating shaft 1b Substrate fixing | fixed part 1c Cup fixing | fixed part 2 Substrate 2a End surface 2b Area | region (cleaning area | region) for predetermined width from the outer edge of a board | substrate
2c Non-cleaning area 3 Cup body 3a Cup body holding member 3b Cleaning liquid reservoir 4 Cleaning member 4a Mounting part 4b Liquid contact surface 4c Clearance 5 Cleaning liquid supply nozzle 6 First cleaning nozzle 7 Second cleaning nozzle 8 Third Cleaning nozzle 9 Fourth cleaning nozzle 10 Fifth cleaning nozzle 11 Sixth cleaning nozzle 12 Seventh cleaning nozzle 13 Eight cleaning nozzles 14 and 15 Arrow 16 Back rinse nozzle 17 Cleaning liquid

Claims (17)

コート材が形成された基板を保持する保持機構と、
前記保持機構によって保持された前記基板のコート材除去領域に対向する接液面を有する除去部材と、
前記接液面と前記基板のコート材除去領域との隙間に洗浄液又はエッチング液を供給する液供給機構と、
を具備し、
前記隙間は、毛細管現象を引き起こすための隙間であり、
前記洗浄液は、前記コート材除去領域のコート材を完全に除去して前記基板を洗浄するための液であり、
前記エッチング液は、前記コート材除去領域のコート材の表面を除去して所望の膜厚になるまでエッチングするための液であり、
前記液供給機構によって供給された洗浄液又はエッチング液は、毛細管現象によって前記隙間全体に広げられることを特徴とするコート材除去装置。
A holding mechanism for holding the substrate on which the coating material is formed;
A removal member having a wetted surface facing the coating material removal region of the substrate held by the holding mechanism;
A liquid supply mechanism for supplying a cleaning liquid or an etching liquid to a gap between the liquid contact surface and the coating material removal region of the substrate;
Comprising
The gap is a gap for causing capillary action,
The cleaning liquid is a liquid for cleaning the substrate by completely removing the coating material in the coating material removal region,
The etching solution is a solution for removing the surface of the coating material in the coating material removal region until etching reaches a desired film thickness.
The coating material removing apparatus, wherein the cleaning liquid or the etching liquid supplied by the liquid supply mechanism is spread over the entire gap by a capillary phenomenon.
請求項1において、
前記基板のコート材除去領域は、前記基板の外縁に沿った基板上面、基板下面又は基板側面の端面であることを特徴とするコート材除去装置。
In claim 1,
The coating material removing apparatus according to claim 1, wherein the coating material removal region of the substrate is an end surface of a substrate upper surface, a substrate lower surface, or a substrate side surface along an outer edge of the substrate.
請求項1において、
前記基板のコート材除去領域は、前記基板の外縁から所定の幅分の領域に位置する基板上面の端面又は基板下面の端面であることを特徴とするコート材除去装置。
In claim 1,
The coating material removal area of the substrate is an end surface of the upper surface of the substrate or an end surface of the lower surface of the substrate located in a region of a predetermined width from the outer edge of the substrate.
請求項1乃至3のいずれか一項において、
前記基板の平面形状は四角形、円形又は楕円形であることを特徴とするコート材除去装置。
In any one of Claims 1 thru | or 3,
The coating material removing apparatus, wherein the planar shape of the substrate is a quadrangle, a circle or an ellipse.
コート材が形成された四角形の基板を保持する保持機構と、
前記保持機構によって保持された前記基板の端面に対向する接液面を有する除去部材と、
前記接液面と前記基板の端面との隙間に洗浄液又はエッチング液を供給する液供給機構と、
前記保持機構を回転させる回転機構と、
を具備し、
前記隙間は、毛細管現象を引き起こすための隙間であり、
前記四角形の基板の端面は、前記基板の四辺に沿った基板上面、基板下面又は基板側面の端面であり、
前記液供給機構は、前記基板の四辺それぞれの中央に位置する隙間に洗浄液又はエッチング液を供給する機構を有しており、
前記洗浄液は、前記基板の端面のコート材を完全に除去して前記基板を洗浄するための液であり、
前記エッチング液は、前記基板の端面のコート材の表面を除去して所望の膜厚になるまでエッチングするための液であり、
前記液供給機構によって供給された洗浄液又はエッチング液は、前記回転機構による遠心力及び毛細管現象によって前記隙間全体に満たされることを特徴とするコート材除去装置。
A holding mechanism for holding a rectangular substrate on which a coating material is formed;
A removal member having a liquid contact surface facing the end surface of the substrate held by the holding mechanism;
A liquid supply mechanism for supplying a cleaning liquid or an etching liquid to a gap between the liquid contact surface and the end surface of the substrate;
A rotation mechanism for rotating the holding mechanism;
Comprising
The gap is a gap for causing capillary action,
The end surface of the rectangular substrate is an end surface of a substrate upper surface, a substrate lower surface or a substrate side surface along the four sides of the substrate,
The liquid supply mechanism has a mechanism for supplying a cleaning liquid or an etching liquid to a gap located at the center of each of the four sides of the substrate,
The cleaning liquid is a liquid for cleaning the substrate by completely removing the coating material on the end face of the substrate,
The etching solution is a solution for removing the surface of the coating material on the end face of the substrate until the film has a desired film thickness,
The coating material removing apparatus according to claim 1, wherein the cleaning liquid or the etching liquid supplied by the liquid supply mechanism is filled in the entire gap by a centrifugal force and a capillary phenomenon by the rotation mechanism.
請求項5において、
前記液供給機構は、前記基板の四隅それぞれに位置する隙間に洗浄液又はエッチング液を供給する機構を有することを特徴とするコート材除去装置。
In claim 5,
The coating material removing apparatus according to claim 1, wherein the liquid supply mechanism includes a mechanism for supplying a cleaning liquid or an etching liquid to gaps located at four corners of the substrate.
請求項6において、前記基板の四隅それぞれに位置する隙間に供給される洗浄液又はエッチング液の量が、前記基板の四辺それぞれの中央に位置する隙間に供給される洗浄液又はエッチング液より少ないことを特徴とするコート材除去装置。   7. The amount of cleaning liquid or etching liquid supplied to the gaps located at each of the four corners of the substrate is less than that of cleaning liquid or etching liquid supplied to the gaps located at the center of each of the four sides of the substrate. A coating material removing device. 請求項5乃至7のいずれか一項において、
前記隙間にガスを供給するガス供給機構を有し、前記ガス供給機構は、前記基板の内側から前記隙間にガスを導入し、前記基板の外側にガスを排気する機構であることを特徴とするコート材除去装置。
In any one of Claims 5 thru | or 7,
It has a gas supply mechanism for supplying gas to the gap, and the gas supply mechanism is a mechanism for introducing gas into the gap from the inside of the substrate and exhausting the gas to the outside of the substrate. Coating material removal device.
請求項5乃至8のいずれか一項において、
前記除去部材を配置した基板面と反対側の基板面である基板下面、基板上面又は基板側面に洗浄液を供給する機構を具備することを特徴とするコート材除去装置。
In any one of Claims 5 thru | or 8,
An apparatus for removing a coating material, comprising: a mechanism for supplying a cleaning liquid to a substrate lower surface, a substrate upper surface, or a substrate side surface that is a substrate surface opposite to the substrate surface on which the removing member is disposed.
請求項5乃至9のいずれか一項において、
前記基板の四辺それぞれの中央に位置する隙間は、前記中央以外に位置する隙間より大きいことを特徴とするコート材除去装置。
In any one of Claims 5 thru | or 9,
The coating material removing apparatus, wherein a gap located at the center of each of the four sides of the substrate is larger than a gap located at a position other than the center.
請求項5乃至10のいずれか一項において、
前記接液面に形成された微細な溝を有し、前記溝は、前記基板の外縁に沿う方向に研磨して形成されたものであることを特徴とするコート材除去装置。
In any one of Claims 5 thru | or 10,
An apparatus for removing a coating material, comprising fine grooves formed on the liquid contact surface, wherein the grooves are formed by polishing in a direction along an outer edge of the substrate.
基板上にコート材を形成し、
前記基板のコート材除去領域に除去部材の接液面を対向させ、前記基板のコート材除去領域と前記接液面との間に毛細管現象を引き起こす隙間を設け、
前記隙間に洗浄液又はエッチング液を供給し、前記隙間全体に毛細管現象によって前記洗浄液又はエッチング液を広げることにより、前記コート材除去領域のコート材を除去するコート材除去方法であって、
前記洗浄液は、前記コート材除去領域のコート材を完全に除去して前記基板を洗浄するための液であり、
前記エッチング液は、前記コート材除去領域のコート材の表面を除去して所望の膜厚になるまでエッチングするための液であることを特徴とするコート材除去方法。
A coating material is formed on the substrate,
The liquid contact surface of the removal member is opposed to the coating material removal region of the substrate, and a gap that causes capillary action is provided between the coating material removal region of the substrate and the liquid contact surface,
A coating material removal method for removing the coating material in the coating material removal region by supplying a cleaning liquid or an etching liquid to the gap and spreading the cleaning liquid or the etching liquid by capillary action over the entire gap,
The cleaning liquid is a liquid for cleaning the substrate by completely removing the coating material in the coating material removal region,
The coating material removing method, wherein the etching solution is a solution for removing the surface of the coating material in the coating material removal region until etching is performed to a desired film thickness.
請求項12において、
前記基板として、シリコンウエハ、SOI基板、またはガラス基板を用いることを特徴とするコート材除去方法。
In claim 12,
A coating material removing method using a silicon wafer, an SOI substrate, or a glass substrate as the substrate.
四角形の基板上にコート材を形成し、
前記基板の四辺に沿った前記基板の端面に除去部材の接液面を対向させ、前記端面と前記接液面との間に毛細管現象を引き起こす隙間を設け、
前記基板及び前記除去部材を回転させながら、前記基板の四辺それぞれの中央に位置する前記隙間に洗浄液又はエッチング液を供給し、前記回転による遠心力及び毛細管現象によって前記中央に位置する前記隙間から前記基板の四隅に位置する前記隙間に前記洗浄液又はエッチング液を広げ、前記隙間全体に洗浄液を満たすことにより、前記端面のコート材を除去するコート材除去方法であって、
前記洗浄液は、前記基板の端面のコート材を完全に除去して前記基板を洗浄するための液であり、
前記エッチング液は、前記基板の端面のコート材の表面を除去して所望の膜厚になるまでエッチングするための液であることを特徴とするコート材除去方法。
A coating material is formed on a rectangular substrate,
The liquid contact surface of the removal member is opposed to the end surface of the substrate along the four sides of the substrate, and a gap that causes capillary action is provided between the end surface and the liquid contact surface,
While rotating the substrate and the removing member, a cleaning solution or an etching solution is supplied to the gap located at the center of each of the four sides of the substrate, and from the gap located at the center by the centrifugal force and capillary phenomenon due to the rotation. A coating material removal method for removing the coating material on the end face by spreading the cleaning liquid or etching liquid in the gaps located at the four corners of the substrate and filling the cleaning liquid over the entire gap,
The cleaning liquid is a liquid for cleaning the substrate by completely removing the coating material on the end face of the substrate,
The coating material removing method, wherein the etching solution is a solution for removing the surface of the coating material on the end face of the substrate until etching is performed to a desired film thickness.
請求項14において、
前記基板として、ガラス基板を用いることを特徴とするコート材除去方法。
In claim 14,
A coating material removing method, wherein a glass substrate is used as the substrate.
請求項14または15において、
前記隙間全体に洗浄液を満たすことにより、前記端面のコート材を除去した後に、前記隙間への洗浄液又はエッチング液の供給を停止し、前記基板及び前記除去部材を回転させながら、前記基板の内側から前記隙間にガスを導入し、前記基板の外側にガスを排気することにより、前記端面を乾燥させることを特徴とするコート材除去方法。
In claim 14 or 15,
After removing the coating material on the end face by filling the entire gap with the cleaning liquid, the supply of the cleaning liquid or etching liquid to the gap is stopped, and while rotating the substrate and the removing member, from the inside of the substrate A coating material removing method, wherein the end face is dried by introducing a gas into the gap and exhausting the gas to the outside of the substrate.
四角形の基板上にコート材を形成し、
前記基板の四辺に沿った前記基板の端面に除去部材の接液面を対向させ、前記端面と前記接液面との間に毛細管現象を引き起こす隙間を設け、
前記基板及び前記除去部材を第1の基板回転数で回転させながら、前記基板の四辺それぞれの中央に位置する前記隙間に純水を添加した洗浄液を供給し、前記回転による遠心力及び毛細管現象によって前記中央に位置する前記隙間から前記基板の四隅に位置する前記隙間に前記洗浄液を広げ、前記隙間全体に洗浄液を満たし、
前記第1の基板回転数より低い第2の基板回転数で前記基板及び前記除去部材を回転させながら、前記基板の四辺それぞれの中央に位置する前記隙間に洗浄液を供給し、前記回転による遠心力及び毛細管現象によって前記中央に位置する前記隙間から前記基板の四隅に位置する前記隙間に前記洗浄液を広げ、前記隙間全体に洗浄液を満たし、
前記第2の基板回転数より高い第3の基板回転数で前記基板及び前記除去部材を回転させながら、前記基板の四辺それぞれの中央に位置する前記隙間に洗浄液を供給し、前記回転による遠心力及び毛細管現象によって前記中央に位置する前記隙間から前記基板の四隅に位置する前記隙間に前記洗浄液を広げ、前記隙間全体に洗浄液を満たし、
前記隙間への洗浄液の供給を停止し、前記第1の基板回転数より高い第4の基板回転数で前記基板及び前記除去部材を回転させて前記基板の端面を乾燥させることを特徴とするコート材除去方法。
A coating material is formed on a rectangular substrate,
The liquid contact surface of the removal member is opposed to the end surface of the substrate along the four sides of the substrate, and a gap that causes capillary action is provided between the end surface and the liquid contact surface,
While rotating the substrate and the removing member at a first substrate rotation speed, a cleaning liquid to which pure water is added is supplied to the gap located at the center of each of the four sides of the substrate, and centrifugal force and capillary action due to the rotation are applied. Spreading the cleaning liquid from the gap located at the center to the gap located at the four corners of the substrate, filling the entire gap with the cleaning liquid,
While rotating the substrate and the removing member at a second substrate rotation speed lower than the first substrate rotation speed, a cleaning liquid is supplied to the gaps located at the centers of the four sides of the substrate, and the centrifugal force due to the rotation And spreading the cleaning liquid from the gap located at the center to the gap located at the four corners of the substrate by capillary action, filling the entire gap with the cleaning liquid,
While rotating the substrate and the removal member at a third substrate rotation speed higher than the second substrate rotation speed, a cleaning liquid is supplied to the gaps located at the centers of the four sides of the substrate, and the centrifugal force generated by the rotation And spreading the cleaning liquid from the gap located at the center to the gap located at the four corners of the substrate by capillary action, filling the entire gap with the cleaning liquid,
The supply of the cleaning liquid to the gap is stopped, and the substrate and the removing member are rotated at a fourth substrate rotation speed higher than the first substrate rotation speed to dry the end surface of the substrate. Material removal method.
JP2009240688A 2009-10-19 2009-10-19 COATING MATERIAL REMOVING DEVICE AND COATING MATERIAL REMOVING METHOD Expired - Fee Related JP5412230B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009240688A JP5412230B2 (en) 2009-10-19 2009-10-19 COATING MATERIAL REMOVING DEVICE AND COATING MATERIAL REMOVING METHOD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009240688A JP5412230B2 (en) 2009-10-19 2009-10-19 COATING MATERIAL REMOVING DEVICE AND COATING MATERIAL REMOVING METHOD

Publications (2)

Publication Number Publication Date
JP2011086881A true JP2011086881A (en) 2011-04-28
JP5412230B2 JP5412230B2 (en) 2014-02-12

Family

ID=44079597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009240688A Expired - Fee Related JP5412230B2 (en) 2009-10-19 2009-10-19 COATING MATERIAL REMOVING DEVICE AND COATING MATERIAL REMOVING METHOD

Country Status (1)

Country Link
JP (1) JP5412230B2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878368A (en) * 1994-09-07 1996-03-22 Hitachi Ltd Work treating method and apparatus
JP2001259502A (en) * 2000-03-15 2001-09-25 Hoya Corp Method for removing unnecessary film and device therefor, and method for producing photomask blank
JP2008021920A (en) * 2006-07-14 2008-01-31 Nec Electronics Corp Apparatus and method for etching semiconductor substrate
WO2009065757A1 (en) * 2007-11-23 2009-05-28 Sez Ag Device and process for wet treating a peripheral area of a wafer-shaped article

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878368A (en) * 1994-09-07 1996-03-22 Hitachi Ltd Work treating method and apparatus
JP2001259502A (en) * 2000-03-15 2001-09-25 Hoya Corp Method for removing unnecessary film and device therefor, and method for producing photomask blank
JP2008021920A (en) * 2006-07-14 2008-01-31 Nec Electronics Corp Apparatus and method for etching semiconductor substrate
WO2009065757A1 (en) * 2007-11-23 2009-05-28 Sez Ag Device and process for wet treating a peripheral area of a wafer-shaped article

Also Published As

Publication number Publication date
JP5412230B2 (en) 2014-02-12

Similar Documents

Publication Publication Date Title
US20220277968A1 (en) Substrate cleaning method, substrate cleaning system, and memory medium
JP5543633B2 (en) Substrate cleaning system, substrate cleaning method, and storage medium
KR102314607B1 (en) Substrate cleaning method, substrate cleaning system and storage medium
US9443712B2 (en) Substrate cleaning method and substrate cleaning system
KR101170255B1 (en) Apparatus and method of treating surface of semiconductor substrate
JP6356295B2 (en) Substrate cleaning apparatus, substrate cleaning method, and storage medium
JP6419053B2 (en) Substrate processing method and substrate processing apparatus
TWI804635B (en) Substrate cleaning method, substrate cleaning system and storage medium
JP6948840B2 (en) Board processing method and board processing equipment
JP2009231618A (en) Development apparatus and development method
JP5412230B2 (en) COATING MATERIAL REMOVING DEVICE AND COATING MATERIAL REMOVING METHOD
CN106057653B (en) Method for manufacturing semiconductor device
JP2009266899A (en) Method and apparatus for surface treatment
JP7144975B2 (en) Substrate processing method and substrate processing apparatus
JP7136543B2 (en) Substrate processing method and substrate processing apparatus
JP6571253B2 (en) Substrate processing method and substrate processing apparatus
JP5940022B2 (en) Manufacturing method of semiconductor device
JP2013212472A (en) Liquid drop applicator
JPH11186123A (en) Development of photosensitive film formed on wafer
TWI416608B (en) Liquid processing method for semiconductor substrate, liquid processing device for semiconductor substrate, and memory medium
JP2001332537A (en) Sog application device
KR20060010436A (en) Method for removing photo-resist in edge part of wafer
JP2004214513A (en) Apparatus and method for applying resist and method for manufacturing semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120806

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130726

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130730

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130924

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131105

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131111

R150 Certificate of patent or registration of utility model

Ref document number: 5412230

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees