JP2011077555A - Semiconductor image sensor module, and method of manufacturing semiconductor image sensor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a micro semiconductor image sensor module for making electronic equipment with an imaging function, such as a digital still camera, a video camera, and a cellular phone with a camera, more compact and lightweight. <P>SOLUTION: The semiconductor image sensor module includes at least a semiconductor image sensor which has a formation region for a means of reading signal charges out on a first principal surface 51a side of a semiconductor substrate 51 and also has a photoelectric conversion region PD including a second principal surface 51b of the semiconductor substrate 51 as a light incident surface and formed from the first principal surface 51a to reach the second principal surface 51b, wherein the semiconductor image sensor is fixed on a transparent substrate so that the transparent substrate faces the second principal surface 51b of the semiconductor image sensor, a support substrate 55 is stuck on a surface of the semiconductor image sensor on the side of the first principal surface 51a, and an electrode pad 45 is formed on a surface of the support substrate 55 to be connected to a conductive plug 56 via an insulating film 52 of the side of a wiring layer 54, while penetrating the support substrate 55. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present disclosure relates to a semiconductor image sensor module used for reducing the size and weight of an electronic apparatus having an imaging function such as a digital still camera, a video camera, or a camera-equipped mobile phone, and a method for manufacturing the semiconductor image sensor module. .

  2. Description of the Related Art Conventionally, a semiconductor image sensor module has been used to reduce the size and weight of an electronic device having an imaging function such as a digital still camera, a video camera, or a camera-equipped mobile phone. This semiconductor image sensor module is configured using a solid-state imaging device, for example, a semiconductor image sensor represented by a CCD image sensor or a CMOS image sensor.

6 and 7 show an example of a conventional semiconductor image sensor module. This technique is described in Patent Document 1.
A semiconductor image sensor module 10 shown in FIG. 7 fixes a CCD type semiconductor image sensor 1 in a ceramic package 2 and performs electrical connection using a bonding wire 3 by a wire bonding method. 1 is configured to protect the semiconductor image sensor 1 by covering the light receiving portion 1a side with a cover glass 4. An output signal is extracted from the ceramic package 2 through a metal lead 5. The lead 5 is connected to a predetermined terminal such as a printed board. A space filter fixing mold body 6 made of resin is provided so as to surround the ceramic package 2. The spatial filter 7 is formed in front of the cover glass 4 by the spatial filter fixing mold body 6 and the filter glass 7a.

  A semiconductor image sensor module 20 shown in FIG. 6 has a CCD type semiconductor image sensor 1 mounted thereon using a gold bump 12 and an ultraviolet curable resin 14 so that the light receiving portion 1a faces the glass substrate 13. The ceramic package 15 is fixed to the glass substrate 13 so as to protect it. Thick film wiring is formed on the inner surface of the glass substrate 13, and electrical connection between the thick film wiring and the semiconductor image sensor 1 is made through the gold bumps 12. A metal lead 5 is led out from the ceramic package 15. Further, the spatial filtering 16 and the filter glass 17 are arranged, and the spatial filter 7 is configured by the spatial filtering 16, the filter glass 7 a, and the glass substrate 13.

JP-A-6-5828

  However, in the semiconductor image sensor module 10 shown in FIG. 7, since the electrical connection is made to the light receiving portion 1a of the semiconductor image sensor 1 by wire bonding, there is a limit to miniaturization. In addition, the spatial filter 7 has a disadvantage that the spatial filter fixing mold body 6 is further fixed in size because the spatial filter fixing mold body 6 is fixed to the heat radiating plate 8 such as Al with screws.

  On the other hand, the semiconductor image sensor module 20 shown in FIG. 6 is drastically improved in size as compared with that of FIG. However, in this semiconductor image sensor module 20, the optical positional relationship between the semiconductor image sensor 1 and the glass substrate 13 is determined only by the bonding pressure and the positional relationship between the semiconductor image sensor 1 and the gold bump 12. The yield of 20 good products must largely depend on the gold bump bonding technology.

  In view of the above, the present disclosure provides an ultra-small semiconductor image sensor module that can further reduce the size and weight of an electronic device having an imaging function such as a digital still camera, a video camera, or a camera-equipped mobile phone. To do.

  A semiconductor image sensor module according to the present disclosure has a formation region for reading signal charges on a first main surface side of a semiconductor substrate, and a second main surface opposite to the first main surface of the semiconductor substrate. At least a semiconductor image sensor having a photoelectric conversion region formed from the first main surface to the second main surface with the surface as a light incident surface. A semiconductor image sensor is fixed on a transparent substrate so that the second main surface of the semiconductor image sensor and the transparent substrate face each other, and a support substrate is disposed on the first main surface side of the semiconductor image sensor. An electrode pad is formed on the surface of the support substrate so as to be bonded and pass through the support substrate and to be connected to a conductive plug via an insulating film on the wiring layer side. The present disclosure is also a method for manufacturing such a semiconductor image sensor module.

  In the semiconductor image sensor module of the present disclosure, the semiconductor image sensor is fixed to the transparent substrate so that the second main surface of the light incident surface of the semiconductor image sensor faces the transparent substrate, Since the electrode pad formed on the surface on the main surface side of 1 and the conductive pattern formed on the transparent substrate are electrically connected through the connecting means, compared with the electrical connection by the conventional bump, It is not necessary to satisfy both the electrical connection of the bump and the positional relationship of the semiconductor image sensor.

  The semiconductor image sensor module according to the present disclosure includes a signal processing chip for processing an image signal output from the semiconductor image sensor on the transparent substrate in the semiconductor image sensor module, and the semiconductor image sensor module. The semiconductor image sensor and the signal processing chip are electrically connected through connection means connected to the electrode pad and a conductive pattern formed on the transparent substrate.

  In the semiconductor image sensor module of the present disclosure, a signal processing chip is further mounted on the transparent substrate together with the semiconductor image sensor, and the semiconductor image sensor and the signal processing chip are electrically connected via the connection means. Even if an image processing function is added, the semiconductor image sensor module can be miniaturized.

  As the above-described semiconductor image sensor, it is preferable to use a back-illuminated CMOS solid-state imaging device.

  According to the semiconductor image sensor module according to the present disclosure, the semiconductor image sensor is directly fixed on the transparent substrate so that the light incident surfaces of the transparent substrate and the semiconductor image sensor face each other, and the conventional electrical connection by the bumps is performed. Since it is not necessary to satisfy both of the positional relations of the semiconductor image sensor, it is possible to realize an ultra-small semiconductor image sensor module and a stable yield.

  Further, according to the semiconductor image sensor module according to the present disclosure, the signal processing chip is further mounted on the transparent substrate, and the image processing is performed by electrically connecting the semiconductor image sensor and the signal processing chip through the connection unit. It is possible to achieve further miniaturization of the semiconductor image sensor module with added functions.

  In the semiconductor image sensor module of the present disclosure, when a back-illuminated CMOS solid-state imaging device is used as the semiconductor image sensor, an ultra-small semiconductor image sensor module suitable for color imaging can be provided. .

It is a disassembled perspective view of the principal part which shows one Embodiment of the semiconductor image sensor module which concerns on this indication. It is a perspective view of the assembly state of the semiconductor image sensor module of FIG. It is a completion figure showing one embodiment of a semiconductor image sensor module concerning this indication. It is sectional drawing on the AA line of the semiconductor image sensor module of FIG. It is a schematic block diagram of the backside illumination type CMOS solid-state image sensor applied to the semiconductor image sensor module of this indication. It is sectional drawing which shows an example of the conventional semiconductor image sensor module. It is sectional drawing which shows the other example of the conventional semiconductor image sensor module.

  Hereinafter, embodiments of a semiconductor image sensor module according to the present disclosure will be described with reference to the drawings.

  1 to 4 show an embodiment of a semiconductor image sensor module according to the present disclosure. As shown in FIG. 1, the semiconductor image sensor module 31 according to the present embodiment is output from the transparent substrate 33 having the required wiring pattern 32 formed on the upper surface, the semiconductor image sensor 34, and the semiconductor image sensor 34. A signal processing chip for processing image signals, such as a DPS (digital signal processing circuit) 35, a memory IC 36, and a window frame spacer for arranging the semiconductor image sensor 34 with a predetermined space with respect to the transparent substrate 33. 37 and a flexible wiring board 38.

  In this example, the transparent substrate 33 is formed of a transparent glass substrate. On the transparent substrate 33, a metal paste, for example, a gold paste, is printed and baked to form a required conductive pattern, that is, a thick film wiring pattern 32, and pad portions 41 [411, 412 are formed on the wiring pattern 32. 413] is formed. The pad portion 41 of the wiring pattern 32 has a pad portion 411 electrically connected to the semiconductor image sensor 34, a pad portion 412 electrically connected to the DSP 35, and a pad portion 413 connected to the memory IC 36. is doing. Terminals 32 a connected to the wiring pattern 32 and connected to the flexible wiring substrate 38 are formed on the end sides of the transparent substrate 33.

  The semiconductor image sensor 34 uses a back-illuminated solid-state imaging device. The back-illuminated solid-state image sensor can be formed by, for example, a CMOS solid-state image sensor or a CCD solid-state image sensor. As these semiconductor image sensors 34, in this example, as will be described later, an on-chip microlens having a light collecting function corresponding to each pixel is formed on the uppermost layer on the light receiving surface side (see FIG. 4).

  As shown in FIGS. 2 and 4, the semiconductor image sensor (so-called solid-state imaging chip) 34 has a wiring pattern of the transparent substrate 3 through a window frame spacer 37 so that the light receiving surface 34a faces the transparent substrate 33 side. 32 is arranged at a predetermined position on the surface where the pad 32 is formed, that is, in a region where the pad portion 411 is formed, and is bonded and fixed to the transparent substrate 33 with an adhesive such as an ultraviolet curable resin. In a state where the semiconductor image sensor 34 is bonded and fixed to the transparent substrate 33, the back surface of the chip opposite to the light receiving surface (light irradiation surface) 34a appears on the front side. At this time, the on-chip microlens 43 of the semiconductor image sensor 34 does not directly contact the transparent substrate 33 by the window frame spacer 37.

  Further, for example, a signal processing chip such as a DSP 35 or a memory IC 36 has a predetermined position on the surface on which the wiring pattern 32 is formed so that the back surface of the chip faces the transparent substrate 33 side, that is, a region where the pad portions 412 and 413 are formed. Are arranged and fixed respectively. The electrical connection between the DSP 35 and the memory IC 36 and the wiring pattern 32 is performed through wire bonding using a thin metal wire 44. Each DSP 35 and the memory IC 36 are fixed on the transparent substrate 33, and the chip surface faces the front side.

  For example, as shown in FIG. 4, the semiconductor image sensor 34 and the wiring pattern 32 are electrically connected to the electrode pad 45 formed on the chip surface opposite to the light receiving surface 34a of the semiconductor image sensor 34 and the transparent substrate 33 side. Between the pad portions 411 of the wiring pattern 32 is performed through wire bonding using a fine metal wire 44.

  Alternatively, although not shown, bumps may be formed on the electrode pads 45 formed on the opposite side of the light receiving surface 34a of the semiconductor image sensor 34 and electrically connected via a flexible wiring board. Since the structure at this time does not form bumps on the light receiving surface side, it is not necessary to satisfy both the electrical connection of the bumps and the positional relationship of the semiconductor image sensor, and a stable good product yield can be obtained.

  The chips of the semiconductor image sensor 34, the DSP 35, and the memory IC 36 mounted on the transparent substrate 33 are electrically connected to each other by a wiring pattern 32 formed on the transparent substrate 33. On the other hand, a flexible wiring substrate 38 is connected to the terminal portion 32 a at the end of the transparent substrate 33. Then, for example, a black resin coating layer 46 is formed on the transparent substrate 33 so as to cover the connection terminal portion 32a of the flexible wiring board 38, the semiconductor image sensor 34, the DSP 35, and the memory IC 36, and the book shown in FIGS. The semiconductor image sensor module 31 of the embodiment is configured.

  FIG. 5 shows a schematic configuration of, for example, a back-illuminated CMOS solid-state imaging chip that becomes the semiconductor image sensor 34. This back-illuminated CMOS solid-state imaging chip 341 has a formation region for reading signal charges from a photoelectric conversion region described later on the first main surface side of the semiconductor substrate, and is opposite to the first main surface of the semiconductor substrate. A photoelectric conversion region having a light incident surface is provided on the second main surface on the side. That is, the back-illuminated CMOS solid-state imaging chip 341 includes a photodiode PD serving as one photoelectric conversion region in the imaging region of a thinned semiconductor substrate 51, for example, a silicon semiconductor substrate, and means for reading the signal charge of the photodiode PD. A plurality of unit pixels composed of a plurality of MOS transistors Tr are arranged in a matrix and a peripheral circuit portion (not shown) made of CMOS transistors is formed in the peripheral region.

  The photodiode PD has a light incident surface on the back surface (second main surface) of the thinned semiconductor substrate 51 from the front surface (first main surface) 51a side to the back surface (second main surface) 51b. It is formed to reach the side. The MOS transistor Tr of the unit pixel and the CMOS transistor constituting the peripheral circuit are formed on the surface 51a side of the semiconductor substrate 51. A multilayer wiring layer 54 in which a multilayer wiring 53 is formed via an interlayer insulating film 52 is formed on the surface 51a of the semiconductor substrate 51. Further, the mechanical strength of the solid-state imaging chip is maintained on the multilayer wiring layer 54. A support substrate 55 made of, for example, a silicon substrate is bonded. The electrode pad 45 connected to the multilayer wiring 53 is formed on the surface 55 a of the support substrate 55 so as to be connected to the conductive plug 56 penetrating the support substrate 55.

  On the other hand, on the back surface 51 b side of the semiconductor substrate 51, a color filter 58 and an on-chip microlens 43 corresponding to each pixel are formed thereon via a passivation film 57. In the CMOS solid-state imaging chip 341, the photodiode PD is irradiated with light from the substrate back surface 51b side through the on-chip microlens 43.

  The peripheral circuit of the solid-state imaging chip 341 includes, for example, an analog front end (AFE), a timing generation circuit, a power supply circuit, a memory circuit, and the like.

  According to the semiconductor image sensor module 31 according to the present embodiment described above, the semiconductor image sensor 34 is disposed on the transparent substrate 33, in this example, directly on the glass substrate, and the semiconductor image sensor 34 is made of black resin. The semiconductor image sensor module 31 can be reduced in size by covering with the coating layer 46. At this time, since no bump is formed on the light receiving surface 34a side, it is not necessary to satisfy both the electrical connection of the bump and the positional relationship of the semiconductor image sensor, and a stable good product yield can be obtained. Since the black resin coating layer 46 shields light other than the light receiving surface 34a of the semiconductor image sensor 34, the quality of the semiconductor image sensor module 31 is improved.

  In the semiconductor image sensor module 34 according to the present embodiment, a DSP 35 and a memory IC 36 which are signal processing chips for processing an image signal output from the semiconductor image sensor 34 are mounted on a glass substrate 33 which is a transparent substrate. The semiconductor image sensor 34, the DSP 35, and the memory IC 36 are connected to each other through a fine metal wire (bonding wire) 44 connected to the electrode pad 45 taken out from the surface of the semiconductor image sensor 34 and a wiring pattern 32 formed on the glass substrate 33. Are electrically connected. With such a configuration, even if an image processing function is added, the size of the semiconductor image sensor module 31 can be miniaturized.

  In the above embodiment, as the semiconductor image sensor 34, a semiconductor image sensor in which an on-chip microlens having a condensing function is formed on the light receiving surface side is applied, and the on-chip microlens and the glass substrate 33 are not in direct contact with each other. The semiconductor image sensor 34 and the glass substrate 33 are fixed via a window frame spacer 37. However, it is also possible to apply a semiconductor image sensor that does not form an on-chip microlens. At this time, the window frame spacer 37 can be omitted and the semiconductor image sensor 34 and the glass substrate 33 can be directly fixed by an adhesive. A semiconductor image sensor in which the on-chip microlens is omitted can also be arranged via the window frame spacer 37.

  When a back-illuminated CMOS solid-state imaging device is used as the semiconductor image sensor 34, a back-illuminated semiconductor image sensor module suitable for color imaging can be provided.

  In the semiconductor image sensor module 31 in the above example, a back-illuminated CMOS solid-state image sensor is used as the semiconductor image sensor 34. Alternatively, a back-illuminated CCD solid-state image sensor can be used.

  Also in the case of a back-illuminated CCD solid-state imaging device, a charge transfer register is formed on the surface (first main surface) side of the thinned semiconductor substrate, and the back surface (second main surface) side of the semiconductor substrate is received. A photodiode is formed to form a photoelectric conversion portion as a surface. In addition, an electrode pad connected to the transfer electrode is formed on the surface of the support substrate made of, for example, a silicon substrate, which is bonded to the surface side of the semiconductor substrate via an interlayer insulating film, and this electrode pad and the CCD solid-state imaging device are mounted. The pad portion of the wiring pattern on the transparent substrate is connected by wire bonding.

31..Semiconductor image sensor module, 32..Wiring pattern, 32a..Terminal part, 33..Transparent substrate, 34..Semiconductor image sensor, 34a..Light receiving surface, 35..Digital signal processing circuit, 36. · Memory IC, 37 ·· Window frame spacer, 41 [411, 412, 413], 43 · · On-chip micro lens, 51 · · Thinned semiconductor substrate, 51a · · Front, 51b · · Back, 52 · · Interlayer insulation film 53 Multilayer wiring 54 Multilayer wiring layer PD Photodiode Tr MOS transistor 55 Support substrate 56 Conductive plug 57 Passivation film 58・ Color filter

Claims (20)

The first main surface side of the semiconductor substrate has a formation region for reading signal charges, and the second main surface opposite to the first main surface of the semiconductor substrate is used as the light incident surface. At least a semiconductor image sensor having a photoelectric conversion region formed so as to extend from the surface to the second main surface;
The semiconductor image sensor is fixed on a transparent substrate so that the second main surface of the semiconductor image sensor and the transparent substrate face each other,
A support substrate is bonded to the first main surface side surface of the semiconductor image sensor,
A semiconductor image sensor module in which an electrode pad is formed on the surface of the support substrate so as to penetrate the support substrate and connect to a conductive plug via an insulating film on the wiring layer side. The semiconductor image sensor module according to claim 1, wherein a window frame spacer is sandwiched between the semiconductor image sensor and the transparent substrate. The semiconductor image sensor module according to claim 1, wherein an on-chip microlens is provided on a surface on the second main surface side of the semiconductor image sensor. The semiconductor image sensor module according to claim 1, wherein the electrode pad and a conductive pattern formed on the transparent substrate are electrically connected. The semiconductor image sensor module according to claim 1, wherein bumps are provided on the electrode pads. A signal processing chip for processing an image signal output from the semiconductor image sensor is mounted on the transparent substrate,
The semiconductor image sensor and the signal processing chip are electrically connected through connection means connected to the electrode pad of the semiconductor image sensor and a conductive pattern formed on the transparent substrate. 3. The semiconductor image sensor module according to 1 or 2. The semiconductor image sensor module according to claim 1, wherein the semiconductor image sensor is a back-illuminated CMOS solid-state imaging device. The semiconductor image sensor module according to claim 1, wherein a transistor is formed on the first main surface. The semiconductor image sensor module according to claim 4, wherein the electrode pad and the conductive pattern are electrically connected via a thin metal wire. The semiconductor image sensor module according to claim 9, wherein the thin metal wire extends toward the light irradiation surface. The semiconductor image sensor module according to claim 4, wherein the conductive pattern is provided on a surface opposite to the light irradiation surface side of the transparent substrate. The semiconductor image sensor module according to claim 2, wherein the electrode pad is provided on a side opposite to a light irradiation surface of the window frame spacer. The semiconductor image sensor module according to claim 1, wherein the electrode pad is covered with a resin coating. The semiconductor image sensor module according to claim 9 or 10, wherein the thin metal wire is covered with a resin coating. The semiconductor image sensor module according to claim 6, wherein a pad portion connected to the conductive pattern is provided outside the window frame spacer. The first main surface side of the semiconductor substrate has a formation region for reading signal charges, and the second main surface opposite to the first main surface of the semiconductor substrate is used as the light incident surface. Forming a semiconductor image sensor having a photoelectric conversion region formed from the surface to the second main surface;
Fixing the semiconductor image sensor on the transparent substrate with the second main surface of the semiconductor image sensor facing the transparent substrate;
Bonding a support substrate on the first main surface side of the semiconductor image sensor;
Forming an electrode pad on the surface of the support substrate so as to pass through the support substrate and connect to a conductive plug via an insulating film on the wiring layer side. A method for manufacturing a semiconductor image sensor module. A signal processing chip for processing an image signal output from the semiconductor image sensor is mounted on the transparent substrate,
The semiconductor image sensor and the signal processing chip are electrically connected through connection means connected to the electrode pad of the semiconductor image sensor and a conductive pattern formed on the transparent substrate. Manufacturing method of semiconductor image sensor module. The method of manufacturing a semiconductor image sensor module according to claim 16, wherein a transistor is formed on the first main surface. The method for manufacturing a semiconductor image sensor module according to claim 17, wherein the electrode pad and the conductive pattern formed on the transparent substrate are electrically connected through a fine metal wire. A window frame spacer is sandwiched between the semiconductor image sensor and the transparent substrate,
The method of manufacturing a semiconductor image sensor module according to claim 1, wherein the electrode pad is formed on a side opposite to a light irradiation surface of the window frame spacer.

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