JP2011075596A - Exposure apparatus, exposure method and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the throughput in scanning exposure of a strip type photosensitive substrate. <P>SOLUTION: An exposure apparatus is provided which includes: a moving mechanism (SC) moving a photosensitive substrate (SH) along a scanning direction (Y direction); a stage mechanism having a first stage (MS1) holding a first mask (M1) and moving in a first direction (+Y direction) and a second stage (MS2) holding a second mask (M2) and moving in a second direction (-Y direction); an illumination optical system having a first illumination system (IL1) forming a first illumination region (IR1) on the first mask and a second illumination system (IL2) forming a second illumination region (IR2) on the second mask; and a projection optical system (PL) having a first imaging system (G1, G3) forming an inverted image of a pattern in the first illumination region onto a first imaging region (ER1) and a second imaging system (G2, G3) forming an erected image of a pattern in the second illumination region onto a second imaging region (ER2). <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a scanning exposure apparatus that transfers a pattern onto a photosensitive substrate.

  Liquid crystal display panels are frequently used as display elements for personal computers and televisions. Recently, a method of manufacturing a display panel by patterning a transparent thin film electrode on a flexible polymer sheet (photosensitive substrate) by a photolithography technique has been devised. As an exposure apparatus used in this photolithography process, an exposure apparatus for transferring a mask pattern onto a strip-shaped photosensitive substrate conveyed by roll to roll (hereinafter referred to as roll-to-roll type exposure). Have been proposed (see, for example, Patent Document 1).

JP 2007-114385 A

  In the roll-to-roll type exposure apparatus, it is required to improve the throughput for transferring the pattern onto the belt-shaped photosensitive substrate.

  The present invention has been made in view of the above-described problems. For example, an exposure apparatus and an exposure apparatus that can achieve an improvement in throughput for scanning exposure on a strip-shaped photosensitive substrate conveyed by roll-to-roll. It is an object to provide a method and a device manufacturing method.

In order to solve the above problems, an exposure apparatus according to a first aspect of the present invention includes a moving mechanism that moves a photosensitive substrate along a scanning direction;
A first stage holding a first mask having a first pattern and moving in a first direction along the scanning direction corresponding to the movement of the substrate in the scanning direction, and a second pattern having a second pattern A stage mechanism having a second stage that holds two masks and moves in a second direction opposite to the first direction along the scanning direction in response to the movement of the substrate in the scanning direction; ,
A first illumination system that forms a first illumination area on the first mask held on the first stage, and a second illumination area that forms a second illumination area on the second mask held on the second stage mechanism. An illumination optical system having two illumination systems;
A first imaging system for forming, in the first imaging region on the substrate, a first projection image inverted in the scanning direction of the first pattern in the first illumination region; and the first pattern in the second illumination region. A projection optical system having a second imaging system for forming a second projection image erecting in the scanning direction of the second pattern in a second imaging region spaced from the first imaging region in the scanning direction; It is characterized by providing.

An exposure method according to a second aspect of the present invention includes a step of moving a photosensitive substrate along a scanning direction;
Holding a first mask having a first pattern and moving the substrate in a first direction along the scanning direction in response to the movement of the substrate in the scanning direction;
Holding a second mask having a second pattern and moving the substrate in a second direction opposite to the first direction along the scanning direction in response to the movement of the substrate in the scanning direction; ,
Forming a first illumination region on the first mask;
Forming a second illumination region on the second mask;
Corresponding to the movement of the first mask in the first direction, the first projection image inverted in the scanning direction of the first pattern in the first illumination area is formed on the first imaging area on the substrate. Forming a second projection image erecting in the scanning direction of the second pattern in the second illumination area corresponding to the movement of the second mask in the second direction; Forming in a second imaging region spaced from each other in the scanning direction.

A device manufacturing method according to a third aspect of the present invention includes an exposure step of exposing the substrate to a pattern including the first pattern and the second pattern using the exposure apparatus according to the first aspect of the present invention. ,
A processing step of processing the substrate on which the pattern is exposed based on the pattern;
It is characterized by including.

  In the exposure apparatus of the present invention, the movement of the first mask in the first direction along the scanning direction and the movement of the second mask in the second direction (direction opposite to the first direction) are alternately performed. By repeating, the area where the projection image of the pattern of the first mask and the projection image of the pattern of the second mask are transferred onto the substrate that moves continuously in a predetermined direction immediately below the projection optical system Are continuously formed alternately. As a result, in the exposure apparatus of the present invention, it is possible to improve the throughput for scanning exposure on a strip-shaped photosensitive substrate conveyed by, for example, roll-to-roll.

1 is a drawing schematically showing a configuration of an exposure apparatus according to a first embodiment of the present invention. It is a figure which shows schematically the structure of the projection optical system concerning 1st Embodiment. It is a figure which shows a pair of image formation area formed at intervals in the scanning direction. It is a figure which shows the pattern area | region and alignment mark which were provided in the mask. It is a 1st figure explaining operation | movement of the scanning exposure in 1st Embodiment. It is a 2nd figure explaining operation | movement of the scanning exposure in 1st Embodiment. It is a figure which shows schematically the structure of the exposure apparatus concerning 2nd Embodiment of this invention. It is a figure which shows schematically the structure of the projection optical system concerning 2nd Embodiment. It is a 1st figure explaining operation | movement of the scanning exposure in a modification. It is a 2nd figure explaining operation | movement of the scanning exposure in a modification. It is a flowchart which shows the manufacturing process of a semiconductor device. It is a flowchart which shows the manufacturing process of a liquid crystal device.

  Embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to the first embodiment of the present invention. In the first embodiment, as shown in FIG. 1, the pattern of the masks M1, M2 is projected and exposed (transferred) onto the sheet SH while the pair of masks M1, M2 and the strip-shaped sheet SH are moved relative to the projection optical system PL. The present invention is applied to a roll-to-roll type exposure apparatus. In FIG. 1, the Z axis is in the normal direction of the transfer surface (photosensitive surface; exposed surface) of the sheet SH as the photosensitive substrate, and the direction parallel to the paper surface of FIG. 1 is in a plane parallel to the transfer surface of the sheet SH. The Y axis is set in the direction perpendicular to the paper surface of FIG. 1 in a plane parallel to the transfer surface of the sheet SH.

  The exposure apparatus according to the first embodiment includes a first illumination system IL1 that illuminates a pattern area of the first mask M1, a first mask stage MS1 that moves while holding the first mask M1, and a pattern area of the second mask M2. , A second mask stage MS2 that moves while holding the second mask M2, a pattern (first pattern) image (first projection image) and a second mask of the first mask M1. A projection optical system PL that forms an image (second projection image) of an M2 pattern (second pattern) on the sheet SH, and a moving mechanism SC that moves (conveys) the sheet SH according to a roll-to-roll system. And a drive control system DR that drives the mask stages MS1 and MS2 and the moving mechanism SC, and a main control system CR that comprehensively controls the operation of the drive control system DR and the like. The sheet SH is a flexible (flexible) belt-like polymer sheet coated with a photoresist (photosensitive material).

  Illumination light (exposure light) for exposure is supplied from the light sources LS1 and LS2 to the illumination systems IL1 and IL2. As exposure light, for example, light of i-line (wavelength 365 nm) selected from light emitted from an ultra-high pressure mercury lamp, pulsed light composed of third harmonic of YAG laser (wavelength 355 nm), KrF excimer laser light (wavelength 248 nm) Etc. can be used. Illumination systems IL1 and IL2 are collimator lenses (not shown), fly-eye lenses (not shown), condenser optical systems (not shown), mask blinds MB1 and MB2 as variable field stops, illumination imaging optics in the order of light incidence. A system (not shown) is provided.

  Light emitted from the light sources LS1 and LS2 illuminates the illumination areas IR1 and IR2 on the masks M1 and M2 via the illumination systems IL1 and IL2. The illumination regions IR1 and IR2 have a predetermined outer shape that is elongated along the X direction. The light from the first illumination region IR1 of the first mask M1 forms a first projection image of the pattern in the first illumination region IR1 in the first imaging region ER1 via the projection optical system PL. The light from the second illumination region IR2 of the second mask M2 enters the second illumination region IR2 into the second image formation region ER2 spaced from the first image formation region ER1 in the Y direction via the projection optical system PL. A second projected image of the pattern is formed. The projection optical system PL forms a first image formation region ER1 in which a first projection image is to be formed and a second image formation region ER2 in which a second projection image is to be formed on the sheet SH.

  The projection optical system PL is telecentric on the masks M1, M2 side and the sheet SH side, and has an enlargement magnification from the masks M1, M2 side to the sheet SH side. The shapes of the imaging regions ER1 and ER2 are shapes obtained by enlarging the shapes of the illumination regions IR1 and IR2 with the projection magnification β of the projection optical system PL. Hereinafter, in order to facilitate understanding of the description, the illumination regions IR1 and IR2 are rectangular regions extending in the X direction and have the same size and the same shape. Therefore, the imaging regions ER1 and ER2 are rectangular regions extending in the X direction and having the same size and the same shape as the illumination regions IR1 and IR2. However, the shapes of the illumination regions IR1 and IR2, and thus the shapes of the imaging regions ER1 and ER2, are variable depending on the shape of the variable openings (light transmission portions) of the mask blinds MB1 and MB2 in the illumination systems IL1 and IL2. Is set.

  Masks M1 and M2 are sucked and held on mask stages MS1 and MS2 via a mask holder (not shown). A mask side laser interferometer (not shown) having a well-known configuration is arranged on the mask stages MS1 and MS2. The mask side laser interferometer measures the position in the X direction, the position in the Y direction, and the rotation angle around the Z axis of the mask stages MS1, MS2, and supplies the measurement result to the main control system CR. Based on the measured values, the main control system CR, via the drive control system DR, positions of the mask stages MS1, MS2 in the X direction, the position and speed in the Y direction as the scanning direction, and the rotation angle around the Z axis. To control.

  The sheet SH is conveyed along a predetermined path by the action of the moving mechanism SC having a known configuration including a series of rolls. Specifically, the moving mechanism SC moves the sheet SH in the −Y direction immediately below the projection optical system PL. A first image formation region ER1 and a second image formation region ER2 are formed on the sheet SH moving in the −Y direction. At the time of scanning exposure, the first mask stage MS1 moves at a speed V / β in the + Y direction along the Y direction as the scanning direction, or the second mask stage MS2 moves in the −Y direction ( Corresponding to the movement at the speed V / β in the direction opposite to the movement direction of the first mask stage MS1, the movement mechanism SC moves the sheet SH in the −Y direction immediately below the projection optical system PL. Move with.

  FIG. 2 is a diagram schematically showing a configuration of the projection optical system according to the first embodiment. In FIG. 2, the masks M1 and M2 are arranged so that their pattern areas substantially coincide with the object plane (not shown) of the projection optical system PL. The sheet SH is conveyed along a trajectory such that the surface (photosensitive surface) thereof substantially coincides with the image surface (not shown) of the projection optical system PL. The projection optical system PL includes a first intermediate imaging optical system G1 as a catadioptric optical system, a second intermediate imaging optical system G2 as a catadioptric optical system, and a common imaging optical system G3 as a refractive optical system. It has.

  The first intermediate imaging optical system G1 forms a first intermediate image I1 (see FIG. 1; not shown in FIG. 2) of the pattern illuminated by the first illumination region IR1 in the pattern region of the first mask M1. The second intermediate imaging optical system G2 forms a second intermediate image I22 (see FIG. 1; not shown in FIG. 2) of the pattern illuminated by the second illumination region IR2 in the pattern region of the second mask M2. The common imaging optical system G3 forms a projection image of the first pattern in the first imaging region ER1 on the sheet SH based on the light from the first intermediate image I1, and based on the light from the second intermediate image I22. Then, a projected image of the second pattern is formed in the second imaging region ER2 on the sheet SH.

  In the projection optical system PL, the light from the first pattern illuminated by the first illumination region IR1 in the pattern region of the first mask M1 is guided to the first intermediate imaging optical system G1, and the three lenses L11, L12, The light enters the concave reflecting mirror CM1 via L13. The light reflected by the concave reflecting mirror CM1 enters the flat reflecting mirror FM1 via the lenses L13 to L11. The light reflected by the plane reflecting mirror FM1 forms a first intermediate image I1 having a first pattern. The light from the first intermediate image I1 is guided to the common imaging optical system G3, and enters the plane reflecting mirror FM3 via the five lenses L31, L32, L33, L34, and L35.

  The light reflected by the plane reflecting mirror FM3 passes through the six lenses L36, L37, L38, L39, L310, L311 and the parallel plane plate P3, and is projected on the first imaging region ER1 on the sheet SH. Form. The lenses L11 to L13 and the concave reflecting mirror CM1 are disposed along the optical axis AX1 of the first intermediate imaging optical system G1. The lenses L31 to L35 are arranged along an axial portion extending linearly in the Y direction on the optical axis AX3 of the common imaging optical system G3. The lenses L36 to L311 and the plane parallel plate P3 are disposed along an axial portion that extends linearly in the Z direction on the optical axis AX3 of the common imaging optical system G3. In the common imaging optical system G3, an aperture stop AS is disposed in the optical path between the lenses L34 and L35.

  The light from the second pattern illuminated by the second illumination region IR2 in the pattern region of the second mask M2 is guided to the second intermediate imaging optical system G2, and is concaved through the three lenses L21, L22, and L23. The light enters the reflecting mirror CM2. The light reflected by the concave reflecting mirror CM2 enters the flat reflecting mirror FM2 via the lenses L23 to L21. The light reflected by the plane reflecting mirror FM2 forms a primary intermediate image I21 (see FIG. 1; not shown in FIG. 2) of the second pattern. The light from the primary intermediate image I21 forms a secondary intermediate image (second intermediate image) I22 having a second pattern via the seven lenses L24, L25, L26, L27, L28, L29, and L210.

  The light from the second intermediate image I22 is guided to the common imaging optical system G3, and enters the plane reflecting mirror FM3 via the five lenses L31 to L35. The light reflected by the plane reflecting mirror FM3 forms a second projected image in the second imaging region ER2 on the sheet SH via the six lenses L36 to L311 and the parallel plane plate P3. The lenses L21 to L23 and the concave reflecting mirror CM2 are arranged along an axial portion extending linearly in the Z direction on the optical axis AX2 of the second intermediate imaging optical system G2. The lenses L24 to L210 are arranged along an axial portion extending linearly in the Y direction on the optical axis AX2 of the second intermediate imaging optical system G2.

  As shown in FIG. 1, the illumination systems IL1 and IL2 include shutters ST1 and ST2 that are arranged in the optical path and open and close the opening (shutters that can be inserted into and removed from the optical path). The pair of shutters ST1 and ST2 are the first light guided to the common imaging optical system G3 via the first illumination region IR1 and the first intermediate imaging optical system G1, or the second illumination region IR2 and the second intermediate imaging. A light-shielding portion that selectively blocks the second light guided to the common imaging optical system G3 through the optical system G2 is configured.

  The pair of shutters ST1 and ST2 as the light shielding portions supplies light from the first illumination region IR1 to the first imaging region ER1 in response to the movement of the first mask stage MS1 in the + Y direction and the second mask. A selection supply unit that supplies light from the second illumination region IR2 to the second imaging region ER2 corresponding to the movement of the stage MS2 in the -Y direction is configured. Instead of the pair of shutters ST1 and ST2, or in addition to the pair of shutters ST1 and ST2, for example, a first shutter that can be inserted into and removed from the optical path of the first intermediate imaging optical system G1, and a second intermediate connection. A second shutter that can be inserted into and removed from the optical path of the image optical system G2 may be provided.

  As shown in FIG. 3, the pair of imaging regions ER <b> 1 and ER <b> 2 are formed at an interval in the Y direction that is the scanning direction. Specifically, the imaging regions ER1 and ER2 have a shape obtained by enlarging the illumination regions IR1 and IR2 with the projection magnification β of the projection optical system PL, that is, a rectangular outer shape extending elongated along the X direction. Have the same size. That is, although not shown, the illumination regions IR1 and IR2 are formed at intervals in the Y direction, and the imaging regions ER1 and ER2 are reduced by the inverse 1 / β of the projection magnification β of the projection optical system PL, That is, they have a rectangular outer shape that is elongated along the X direction, and have the same size.

  In FIG. 3, reference numeral AX3 indicates the optical axis of the common imaging optical system G3, and circle EF3 indicates the exit-side field of view of the common imaging optical system G3. In each embodiment, the pair of imaging regions ER1 and ER2 of the projection optical system PL includes a circle EF3 having a radius of Ra = 109.5 mm around the optical axis AX3, and Rb = 35 mm in the Y direction from the optical axis AX3. It is set in a pair of semicircular effective imaging regions 31 and 32 defined by a pair of straight lines 30 extending in the X direction with a distance therebetween.

  The first projected image formed in the first imaging region ER1 is an image that is inverted in the Y direction (scanning direction) of the first pattern in the first illumination region IR1. In other words, the first projection image is formed in a posture in which the first pattern of the first mask M1 is rotated 180 degrees around the Z axis. The second projection image formed in the second image formation region ER2 is an image upright in the Y direction of the second pattern in the second illumination region IR2. As a result, the first projection image and the second projection image have the same size, but are opposite to each other with respect to the Y direction.

  The first intermediate imaging optical system G1 and the common imaging optical system G3 apply a first projection image inverted in the scanning direction of the first pattern in the first illumination area IR1 to the first imaging area ER1 on the sheet SH. A first imaging system to be formed is configured. The second intermediate imaging optical system G2 and the common imaging optical system G3 convert the second projection image erect in the scanning direction of the second pattern in the second illumination area IR2 into the second imaging area ER2 on the sheet SH. The second imaging system to be formed is configured. The common imaging optical system G3 is an optical system common to the first imaging system (G1, G3) and the second imaging system (G2, G3). The first imaging system (G1, G3) and the second imaging system (G2, G3) have coaxial optical members (L31 to L311, P3).

  The following table (1) lists the values of the specifications of the projection optical system PL according to the first embodiment. In the main specifications of Table (1), λ is the center wavelength of the exposure light, β is the projection magnification of each imaging system of the projection optical system PL (that is, the magnification from the object plane to the image plane of each imaging system) NA represents the numerical aperture on the object side (mask M1, M2 side) of each imaging system. In each embodiment, the values of λ, β, and NA are values common to the first imaging system (G1, G3) and the second imaging system (G2, G3). In the optical member specifications of Table (1), the surface number is the order of the surfaces from the light incident side, r is the radius of curvature of each surface (vertical curvature radius: mm in the case of an aspheric surface), d Represents the axial distance between the surfaces, that is, the distance (mm) along the optical axis from the surface to the next surface, and n represents the refractive index of the medium with respect to the center wavelength. Note that the surface distance d changes its sign each time it is reflected.

In each embodiment, the aspherical surface has a height in the direction perpendicular to the optical axis as y, and the distance (sag amount) along the optical axis from the tangential plane at the apex of the aspherical surface to the position on the aspherical surface at height y ) Is z, the apex radius of curvature is r, the conic coefficient is κ, and the m-th aspherical coefficient is C _m , it is expressed by the following formula (a). In Table (1), the lens surface formed in an aspherical shape is marked with * on the right side of the surface number. In each aspherical surface in Table (1), the cone coefficient κ is 0. The notation in Table (1) is the same in the following Table (3).
z = (y ² / r) / [1+ {1− (1 + κ) · y ² / r ² } ^1/2 ] + C ₄ · y ⁴ + C ₆ · y ⁶
+ C ₈ · y ⁸ + C ₁₀ · y ¹⁰ + C ₁₂ · y ¹² + C ₁₄ · y ¹⁴ (a)

Table (1)
<First imaging system: first intermediate imaging optical system G1 + common imaging optical system G3>
(Main specifications)
λ = 365nm
β = 2.5
NA = 0.135

(Optical member specifications)
Surface number rd n Optical member object surface ∞ 97.549 1 (first pattern surface)
1 ∞ 140.545 1 (virtual surface)
2 -900.486 28.000 1.48738 (L11)
3 -301.318 19.922 1
4 364.550 45.000 1.48738 (L12)
5 -783.172 310.089 1
6 -214.029 29.000 1.47455 (L13)
7 1951.163 15.912 1
8 -336.459 -15.912 1 (CM1)
9 1951.163 -29.000 1.47455 (L13)
10 -214.029 -310.089 1
11 -783.172 -45.000 1.48738 (L12)
12 364.550 -19.922 1
13 -301.318 -28.000 1.48738 (L11)
14 -900.486 -140.545 1
15 ∞ 25.190 1 (FM1)
16 ∞ 63.005 1 (first intermediate image I1)
17 505.434 28.000 1.48738 (L31)
18 -402.588 6.814 1
19 -192.816 20.355 1.47455 (L32)
20 -362.693 63.641 1
21 297.153 45.000 1.47455 (L33)
22 -1026.107 45.562 1
23 266.464 20.000 1.47455 (L34)
24 -2373.749 113.250 1
25 ∞ 10.000 1 (AS)
26 205.426 20.000 1.47455 (L35)
27 365.190 59.695 1
28 ∞ -85.465 1 (FM3)
29 122.912 -20.000 1.48738 (L36)
30 193.386 -2.000 1
31 889.339 -20.000 1.47455 (L37)
32 245.239 -89.055 1
33 257.773 -19.000 1.48738 (L38)
34 -2414.032 -9.703 1
35 1232.175 -30.000 1.47455 (L39)
36 236.226 -2.000 1
37 -794.858 -32.000 1.47455 (L310)
38 539.431 -478.112 1
39 1585.527 -32.000 1.47455 (L311)
40 512.500 -3.000 1
41 ∞ -33.000 1.47455 (P3)
42 ∞ -60.008 1

<Second imaging system: second intermediate imaging optical system G2 + common imaging optical system G3>
(Main specifications)
λ = 365nm
β = 2.5
NA = 0.135

(Optical member specifications)
Surface number rd n Optical member object surface ∞ 97.550 1 (second pattern surface)
1 ∞ 82.264 1 (virtual surface)
2 355.964 28.000 1.48738 (L21)
3 -875.968 2.000 1
4 116.369 32.000 1.48738 (L22)
5 * 438.094 173.620 1
6 -75.416 29.000 1.47455 (L23)
7 1473.706 33.945 1
8 -176.633 -33.945 1 (CM2)
9 1473.706 -29.000 1.47455 (L23)
10 -75.416 -173.620 1
11 * 438.094 -32.000 1.48738 (L22)
12 116.369 -2.000 1
13 -875.968 -28.000 1.48738 (L21)
14 355.964 -82.264 1
15 ∞ 10.000 1 (FM2)
16 ∞ 167.521 1 (Primary intermediate image I21)
17 * -2400.000 26.065 1.47455 (L24)
18 -190.039 1.000 1
19 103.296 45.000 1.48738 (L25)
20 1480.148 1.000 1
21 99.558 24.000 1.47455 (L26)
22 * 124.051 46.983 1
23 194.971 23.000 1.47455 (L27)
24 81.607 70.440 1
25 -126.327 23.000 1.47455 (L28)
26 -81.792 1.000 1
27 -1181.239 28.989 1.48738 (L29)
28 -109.570 1.000 1
29 207.531 24.000 1.47455 (L210)
30 * 2400.000 57.000 1
31 ∞ 88.195 1 (second intermediate image I22)
32 505.434 28.000 1.48738 (L31)
33 -402.588 6.814 1
34 -192.816 20.355 1.47455 (L32)
35 -362.693 63.641 1
36 297.153 45.000 1.47455 (L33)
37 -1026.107 45.562 1
38 266.464 20.000 1.47455 (L34)
39 -2373.749 113.250 1
40 ∞ 10.000 1 (AS)
41 205.426 20.000 1.47455 (L35)
42 365.190 59.695 1
43 ∞ -85.465 1 (FM3)
44 122.912 -20.000 1.48738 (L36)
45 193.386 -2.000 1
46 889.339 -20.000 1.47455 (L37)
47 245.239 -89.055 1
48 257.773 -19.000 1.48738 (L38)
49 -2414.032 -9.703 1
50 1232.175 -30.000 1.47455 (L39)
51 236.226 -2.000 1
52 -794.858 -32.000 1.47455 (L310)
53 539.431 -478.112 1
54 1585.527 -32.000 1.47455 (L311)
55 512.500 -3.000 1
56 ∞ -33.000 1.47455 (P3)
57 ∞ -60.000

(Aspheric data)
5 sides:
C ₄ = 0.430229 × 10 ⁻⁷ C ₆ = −0.561500 × 10 ⁻¹²
C ₈ = 0.238840 × 10 ⁻¹⁵ C ₁₀ = −0.481192 × 10 ⁻¹⁹
C ₁₂ = 0.538885 × 10 ⁻²³ C ₁₄ = −0.236148 × 10 ⁻²⁷
11th:
C ₄ = 0.430229 × 10 ⁻⁷ C ₆ = −0.561500 × 10 ⁻¹²
C ₈ = 0.238840 × 10 ⁻¹⁵ C ₁₀ = −0.481192 × 10 ⁻¹⁹
C ₁₂ = 0.538885 × 10 ⁻²³ C ₁₄ = −0.236148 × 10 ⁻²⁷
17th:
C ₄ = −0.1004737 × 10 ⁻⁶ C ₆ = 0.658146 × 10 ⁻¹²
C ₈ = 0.926917 × 10 ⁻¹⁵ C ₁₀ = −0.279704 × 10 ⁻¹⁸
C ₁₂ = 0.423546 × 10 ⁻²² C ₁₄ = −0.234044 × 10 ⁻²⁶
22 sides:
C ₄ = −0.326687 × 10 ⁻⁷ C ₆ = 0.419352 × 10 ⁻¹⁰
C ₈ = 0.100557 × 10 ⁻¹³ C ₁₀ = −0.471059 × 10 ⁻¹⁷
C ₁₂ = 0.329199 × 10 ⁻²⁰ C ₁₄ = −0.674109 × 10 ⁻²⁴
30th:
C ₄ = 0.517468 × 10 ⁻⁷ C ₆ = 0.174779 × 10 ⁻¹¹
C ₈ = −0.344393 × 10 ⁻¹⁵ C ₁₀ = 0.363678 × 10 ⁻¹⁹
C ₁₂ = 0.122131 × 10 ⁻²² C ₁₄ = −0.238656 × 10 ⁻²⁶

  The following table (2) shows the image height (distance from the optical axis AX3) and the RMS value (root mean square) Wrms of wavefront aberration in the projection optical system PL according to the first embodiment. To raise a relationship. Referring to Table (2), in the projection optical system PL according to the first embodiment, a pair of semicircular effective imaging regions 31 and 32 defined by Ra = 109.5 mm and Rb = 35 mm in FIG. It can be seen that the wavefront aberration is well corrected for the rays reaching.

Table (2)
(First imaging system: first intermediate imaging optical system G1 + common imaging optical system G3)
Image height [mm] 35.000 54.750 82.125 109.500
Wrms [λ] 1.6 mλ 3.2 mλ 5.4 mλ 5.1 mλ

(Second imaging system: second intermediate imaging optical system G2 + common imaging optical system G3)
Image height [mm] 35.000 54.750 82.125 109.500
Wrms [λ] 2.5 mλ 2.4 mλ 2.4 mλ 5.5 mλ

  As shown in FIG. 4, the masks M1 and M2 are provided with, for example, rectangular pattern areas PA1 and PA2 in which circuit patterns of the display panel are formed. In addition, a pair of alignment marks AM1 are provided at an interval in the X direction on the −Y direction side of the pattern areas PA1 and PA2, and a pair of alignment marks AM2 are provided on the + Y direction side of the pattern areas PA1 and PA2 in the X direction. It is provided at intervals. An alignment detection system (not shown) provided in the exposure apparatus detects these alignment marks AM1 and AM2, and detects the positions of the masks M1 and M2 (and consequently the positions of the mask stages MS1 and MS2). The detection result of the alignment detection system is supplied to the main control system CR.

  Hereinafter, the scanning exposure operation in the first embodiment will be described with reference to FIGS. During the scanning exposure, the sheet SH is conveyed at a constant speed in the −Y direction immediately below the projection optical system PL, and the first mask M1 moves at a constant speed in the + Y direction corresponding to the movement of the sheet SH. Then, the second mask M2 moves at a constant speed in the −Y direction corresponding to the movement of the sheet SH. On the sheet SH, a rectangular shot region SR1 obtained by enlarging the pattern region PA1 of the first mask M1 with the projection magnification β of the projection optical system PL, and a pattern region PA2 of the second mask M2 are projected by the projection optical system PL. A rectangular shot region SR2 enlarged by β is sequentially formed at an interval.

  In FIGS. 5 and 6, a shot region or transfer in which the pattern (first pattern) of the first mask M1 is transferred through the two-time imaging type first imaging system (G1, G3) of the projection optical system PL. The shot area is indicated by reference numeral SR1. The shot area to which the pattern (second pattern) of the second mask M2 is transferred through the second imaging system (G2, G3) of the three-time imaging type or the transferred shot area is denoted by reference sign SR2. ing. The shot areas SR1 and the shot areas SR2 are alternately formed along the longitudinal direction of the sheet SH.

  In the first embodiment, when scanning exposure is performed on the shot region SR1, an opening of the shutter ST1 disposed in the optical path of the first illumination system IL1 is opened, and the shutter ST2 disposed in the optical path of the second illumination system IL2 is opened. Close the opening. As a result, an inverted image of the first pattern is formed in the first imaging region ER1 via the first imaging system (G1, G3), while an image of the second pattern is formed in the second imaging region ER2. It will not be formed. In this state, the illumination region IR1 is located at the end portion on the −Y direction side (see FIG. 5B) from the start position (see FIG. 5A) located at the end portion on the + Y direction side of the pattern region PA1. Until the pattern area PA1 is scanned by the illumination area IR1, the mask M1 (and thus the mask stage MS1) is moved at a required speed in the + Y direction.

  Corresponding to the movement of the mask M1 in the + Y direction, the imaging region ER1 is located on the + Y direction side from the starting position (see FIG. 5A) where the imaging region ER1 is located on the −Y direction side end of the shot region SR1. The sheet SH moves in the -Y direction, that is, in the direction opposite to the mask M1, so that the shot area SR1 is scanned by the imaging area ER1 until the end position (see FIG. 5B) is reached. To do. Thus, the pattern in the pattern area PA1 of the mask M1 is scanned and exposed (transferred) to the shot area SR1.

  When the sheet SH passes the end position of the scanning exposure on the shot region SR1 and the formation position of the imaging region ER2 deviates from the range of the shot region SR1, the scanning exposure on the shot region SR2 is started. Accordingly, the opening of the shutter ST2 disposed in the optical path of the illumination system IL2 is between the end of the scanning exposure to the shot region SR1 and the time when the formation position of the imaging region ER2 is out of the range of the shot region SR1. Open and close the opening of the shutter ST1 disposed in the optical path of the illumination system IL1. Specifically, for example, after the alignment detection system detects the pair of alignment marks AM1, the shutters ST1 and ST2 are opened and closed.

  As a result, an erect image of the second pattern is formed in the imaging region ER2 via the second imaging system (G2, G3), but no image of the first pattern is formed in the imaging region ER1. Become. In this state, the illumination region IR2 is located at the end portion on the + Y direction side (see FIG. 6A) from the start position (see FIG. 5C) located on the end portion on the −Y direction side of the pattern region PA2. Until the pattern area PA2 is scanned by the illumination area IR2, the mask M2 is moved in the -Y direction at a required speed until the value reaches

  Corresponding to the movement of the mask M2 in the −Y direction, the imaging region ER2 is positioned at the end of the shot region SR2 on the −Y direction side end (see FIG. 5C) and the end on the + Y direction side. The sheet SH moves in the −Y direction, that is, in the same direction as the mask M2, so that the shot area SR2 is scanned by the imaging area ER2 until the end position (see FIG. 6A) located at the portion is reached. To do. Thus, the pattern in the pattern area PA2 of the mask M2 is scanned and exposed in the shot area SR2.

  Since the formation position of the imaging region ER1 is out of the range of the shot region SR2 when the sheet SH has passed the end position of the scanning exposure on the shot region SR2 (see FIG. 6A), immediately the next Scan exposure to the shot area SR1 is started. Specifically, for example, immediately after the alignment detection system detects the pair of alignment marks AM2, the opening of the shutter ST1 disposed in the optical path of the illumination system IL1 is opened, and the shutter ST2 disposed in the optical path of the illumination system IL2. Close the opening.

  As a result, the inverted image of the first pattern is formed in the imaging region ER1, but the image of the second pattern is not formed in the imaging region ER2. In this state, the illumination region IR1 is located at the end portion on the −Y direction side (see FIG. 6C) from the start position (see FIG. 6B) located on the end portion on the + Y direction side of the pattern region PA1. Until the pattern area PA1 is scanned by the illumination area IR1, the mask M1 is moved in the + Y direction at a required speed until the value reaches ()).

  Corresponding to the movement of the mask M1 in the + Y direction, the end portion on the + Y direction side from the starting position (see FIG. 6B) where the imaging region ER1 is located at the end portion on the −Y direction side of the shot region SR1 The sheet SH moves in the −Y direction, that is, in the direction opposite to the mask M1, so that the shot area SR1 is scanned by the imaging area ER1 until the end position (see FIG. 6C) is reached. To do. In this way, the pattern in the pattern area PA1 of the mask M1 is scanned and exposed in the next shot area SR1.

  As described above, in the exposure apparatus according to the first embodiment, the movement of the first mask M1 in the + Y direction and the movement of the second mask M2 in the -Y direction are repeated alternately, thereby directly below the projection optical system PL. Shot region SR1 to which the projection image of the pattern of the first mask M1 is transferred and shot region SR2 to which the projection image of the pattern of the second mask M2 is transferred onto the sheet SH continuously moving in the -Y direction in FIG. Are continuously formed alternately. That is, in the exposure apparatus of the first embodiment, it is possible to improve the throughput required for scanning exposure on the belt-like sheet SH conveyed by roll-to-roll.

  FIG. 7 is a drawing schematically showing a configuration of an exposure apparatus according to the second embodiment of the present invention. The second embodiment has a configuration similar to that of the first embodiment. However, in the second embodiment, the configuration of the projection optical system PL, particularly the configuration of the second intermediate imaging optical system G2 is different from the first embodiment. In FIG. 7, the same reference numerals as those in FIG. 1 are assigned to components having the same functions as those in the first embodiment of FIG. Hereinafter, paying attention to differences from the first embodiment, the configuration and operation of the second embodiment will be described.

  Referring to FIG. 8, in the projection optical system PL according to the second embodiment, the light from the second pattern illuminated by the second illumination region IR2 in the pattern region of the second mask M2 is the second as the refractive optical system. It is guided to the intermediate imaging optical system G2 and enters a roof mirror (a reflecting member having a roof surface) DM. The light reflected by the roof mirror DM passes through the lens L21 and the plane reflecting mirror FM21, and then enters the plane reflecting mirror FM22 via the three lenses L22, L23, and L24. The light reflected by the plane reflecting mirror FM22 enters the plane reflecting mirror FM23 via the five lenses L25, L26, L27, L28, and L29.

  The light reflected by the plane reflecting mirror FM23 passes through the lens L210 and the plane reflecting mirror FM24, and then passes through the four lenses L211, L212, L213, and L214, and the second intermediate image I2 of the second pattern (see FIG. 7). ; Not shown in FIG. 8). The light from the second intermediate image I2 is guided to the common imaging optical system G3, and enters the plane reflecting mirror FM3 via the five lenses L31 to L35. The light reflected by the plane reflecting mirror FM3 forms a second projected image in the second imaging region ER2 on the sheet SH via the six lenses L36 to L311 and the parallel plane plate P3.

  In the projection optical system PL of the second embodiment, the second intermediate imaging optical system G2 and the common imaging optical system G3 constitute a second imaging type second imaging system. Thus, the projected image of the second pattern formed in the second imaging region ER2 becomes an image upright in the scanning direction (Y direction). The following table (3) lists values of specifications of the projection optical system PL according to the second embodiment. In the second embodiment, since the configuration of the first imaging system (G1, G3) is the same as that of the first embodiment, the main specifications of the first imaging system (G1, G3) in Table (3) and Description of optical member specifications is omitted.

Table (3)
<First imaging system: first intermediate imaging optical system G1 + common imaging optical system G3>
Same as the main specifications and optical member specifications of the first imaging system in Table (1)

<Second imaging system: second intermediate imaging optical system G2 + common imaging optical system G3>
(Main specifications)
λ = 365nm
β = 2.5
NA = 0.135

(Optical member specifications)
Surface number rd n Optical member object surface ∞ 97.548 1 (second pattern surface)
1 ∞ -139.597 1 (DM: Dach surface)
2 * 530.143 -24.000 1.47455 (L21)
3 -520.188 -111.212 1
4 ∞ 131.791 1 (FM21)
5 1523.992 44.454 1.47455 (L22)
6 -482.529 1.000 1
7 634.568 41.736 1.47455 (L23)
8 -1211.158 1.000 1
9 407.981 42.685 1.47455 (L24)
10 -8434.430 131.967 1
11 ∞ -172.328 1 (FM22)
12 * 204.240 -18.000 1.47455 (L25)
13 -149.859 -22.269 1
14 195.270 -18.000 1.47455 (L26)
15 -333.964 -133.619 1
16 631.792 -38.228 1.47455 (L27)
17 184.505 -5.883 1
18 321.803 -43.035 1.47455 (L28)
19 192.266 -1.000 1
20 -189.673 -45.000 1.47455 (L29)
21 * -981.426 -137.345 1
22 ∞ 158.732 1 (FM23)
23 -157.316 15.000 1.47455 (L210)
24 * 138.310 220.902 1
25 ∞ -84.849 1 (FM24)
26 -602.689 -35.091 1.47455 (L211)
27 404.798 -1.000 1
28 -233.771 -39.511 1.47455 (L212)
29 1584.677 -1.000 1
30 -426.683 -24.000 1.47455 (L213)
31 2911.112 -66.056 1
32 288.986 -24.000 1.47455 (L214)
33 * -192.249 -54.800 1
34 ∞ -88.195 1 (Second intermediate image I2)
35 -505.434 -28.000 1.48738 (L31)
36 402.588 -6.814 1
37 192.816 -20.355 1.47455 (L32)
38 362.693 -63.641 1
39 -297.153 -45.000 1.47455 (L33)
40 1026.107 -45.562 1
41 -266.464 -20.000 1.47455 (L34)
42 2373.749 -113.250 1
43 ∞ -10.000 1 (AS)
44 -205.426 -20.000 1.47455 (L35)
45 -365.190 -59.695 1
46 ∞ 85.465 1 (FM3)
47 -122.912 20.000 1.48738 (L36)
48 -193.386 2.000 1
49 -889.339 20.000 1.47455 (L37)
50 -245.239 89.055 1
51 -257.773 19.000 1.48738 (L38)
52 2414.032 9.703 1
53 -1232.175 30.000 1.47455 (L39)
54 -236.226 2.000 1
55 794.858 32.000 1.47455 (L310)
56 -539.431 478.112 1
57 -1585.527 32.000 1.47455 (L311)
58 -512.500 3.000 1
59 ∞ 33.000 1.47455 (P3)
60 ∞ 60.000 1

(Aspheric data)
Two sides:
C ₄ = 0.445895 × 10 ⁻⁸ C ₆ = 0.189683 × 10 ⁻¹²
C ₈ = 0.136825 × 10 ⁻¹⁶ C ₁₀ = −0.134197 × 10 ⁻²⁰
C ₁₂ = 0.283414 × 10 ⁻²⁴ C ₁₄ = −0.878096 × 10 ⁻²⁹
12 sides:
C ₄ = 0.858745 × 10 ⁻⁷ C ₆ = 0.194220 × 10 ⁻¹²
C ₈ = 0.370104 × 10 ⁻¹⁶ C ₁₀ = 0.129965 × 10 ⁻¹⁹
C ₁₂ = −0.205872 × 10 ⁻²³ C ₁₄ = 0.215316 × 10 ⁻²⁷
21 sides:
C ₄ = −0.137520 × 10 ⁻⁷ C ₆ = −0.209966 × 10 ⁻¹³
C ₈ = −0.349229 × 10 ⁻¹⁸ C ₁₀ = 0.395338 × 10 ⁻²³
C ₁₂ = −0.344883 × 10 ⁻²⁷ C ₁₄ = 0.428309 × 10 ⁻³²
24th:
C ₄ = −0.411408 × 10 ⁻⁷ C ₆ = 0.137664 × 10 ⁻¹¹
C ₈ = 0.549973 × 10 ⁻¹⁶ C ₁₀ = 0.410858 × 10 ⁻¹⁹
C ₁₂ = −0.729987 × 10 ⁻²³ C ₁₄ = 0.103624 × 10 ⁻²⁶
33:
C ₄ = −0.183066 × 10 ⁻⁷ C ₆ = −0.604387 × 10 ⁻¹²
C ₈ = 0.796225 × 10 ⁻¹⁶ C ₁₀ = −0.440868 × 10 ⁻¹⁹
C ₁₂ = 0.143525 × 10 ⁻²² C ₁₄ = −0.210436 × 10 ⁻²⁶

  Table (4) below shows the relationship between the image height (distance from the optical axis AX3) and the RMS value Wrms of the wavefront aberration in the projection optical system PL according to the second embodiment. Referring to Table (4), also in the projection optical system PL according to the second embodiment, a pair of semicircular effective imaging regions 31 and 32 defined by Ra = 109.5 mm and Rb = 35 mm in FIG. It can be seen that the wavefront aberration is well corrected for the light beam reaching In the second embodiment, since the configuration of the first imaging system (G1, G3) is the same as that of the first embodiment, the wavefront aberration data of the first imaging system (G1, G3) in Table (4). Listing is omitted.

Table (4)
(First imaging system: first intermediate imaging optical system G1 + common imaging optical system G3)
Same as the wavefront aberration data of the first imaging system in Table (2)

(Second imaging system: second intermediate imaging optical system G2 + common imaging optical system G3)
Image height [mm] 35.000 54.750 82.125 109.500
Wrms [λ] 3.2 mλ 6.6 mλ 4.8 mλ 3.9 mλ

  Also in the second embodiment, scanning exposure is performed according to the operation described with reference to FIGS. That is, in the second embodiment, similarly to the first embodiment, the projection optical system PL is alternately repeated by alternately moving the first mask M1 in the + Y direction and the second mask M2 in the -Y direction. A shot in which a projection image of the pattern of the first mask M1 and the projection image of the pattern of the second mask M2 are transferred onto the sheet SH that moves continuously in the −Y direction immediately below Regions SR2 are alternately and continuously formed.

  In each of the above-described embodiments, the illumination optical system including the pair of illumination systems IL1 and IL2 includes a light shielding unit, and thus includes a selective supply unit. However, the present invention is not limited to this, and various configurations are possible for the specific configurations and arrangements of the light shielding unit and the selective supply unit. For example, a configuration in which the projection optical system PL includes a light shielding unit, and thus a selection supply unit is also possible. Specifically, a configuration in which the optical path of the first intermediate imaging optical system G1 is selectively blocked by the first shutter and the optical path of the second intermediate imaging optical system G2 is selectively blocked by the second shutter is also possible.

  Further, in each of the above-described embodiments, the illumination systems IL1 and IL2 do not have a common optical system. Further, the illumination systems IL1 and IL2 do not use a common light source. However, the present invention is not limited to this, and a configuration in which the illumination optical system has a common optical system for the first illumination system and the second illumination system is adopted, or the illumination optical system is the first illumination system and the second illumination. It is also possible to adopt a configuration using a common light source for the system.

  In each of the above-described embodiments, the first mask stage MS1 is moved in the + Y direction and the second mask stage MS2 is moved in the -Y direction during scanning exposure. However, the present invention is not limited to this, and a configuration using a common stage that reciprocally moves the first mask stage and the second mask stage synchronously along the scanning direction is also possible.

  In each of the above-described embodiments, the first mask M1 is moved in the + Y direction and the second mask M2 separate from the first mask M1 is moved in the −Y direction during scanning exposure. However, the present invention is not limited to this, and as shown in FIGS. 9 and 10, a pair of pattern areas PA1 and PA2 spaced apart in the Y direction are provided in a single mask M (not shown), and the mask M is held. A modification in which scanning exposure is performed by reciprocating a single mask stage MS (not shown) to be moved in the Y direction (scanning direction) is also possible.

  In the modification shown in FIGS. 9 and 10, the scanning exposure to the shot region SR1 is performed in a state where the inverted image of the first pattern is formed in the imaging region ER1, but the image of the second pattern is not formed in the imaging region ER2. I do. At the time of scanning exposure on the shot area SR1, the illumination area IR1 is an end position located at the end on the −Y direction side from the start position (see FIG. 9A) located at the end on the + Y direction side of the pattern area PA1. The mask M (and hence the mask stage MS) is moved in the + Y direction at a required speed so that the pattern area PA1 is scanned by the illumination area IR1 until reaching (see FIG. 9B). Corresponding to the movement of the mask M in the + Y direction, the end portion on the + Y direction side from the starting position (see FIG. 9A) where the imaging region ER1 is located at the end portion on the −Y direction side of the shot region SR1 The sheet SH moves in the −Y direction so that the shot area SR1 is scanned by the imaging area ER1 until the end position (see FIG. 9B) is reached. Thus, the pattern in the pattern area PA1 of the mask M is subjected to scanning exposure (transfer) to the shot area SR1.

  The mask stage MS begins to decelerate at the end of scanning exposure on the shot region SR1, eventually stops, starts to move in the -Y direction, and reaches a required speed at the start of scanning exposure on the shot region SR2. . At the start of scanning exposure on the shot region SR2, the sheet SH further moves in the -Y direction, and the formation position of the imaging region ER2 deviates from the range of the shot region SR1. Thus, scanning exposure is performed on the shot region SR2 in a state where an erect image of the second pattern is formed in the imaging region ER2, but no image of the first pattern is formed in the imaging region ER1. At the time of scanning exposure on the shot area SR2, the end position at which the illumination area IR2 is positioned at the end on the + Y direction side from the start position (see FIG. 9C) positioned at the end on the −Y direction side of the pattern area PA2 The mask M (and thus the mask stage MS) is moved in the −Y direction at a required speed so that the pattern area PA2 is scanned by the illumination area IR2 until reaching (see FIG. 9A). Corresponding to the movement of the mask M in the −Y direction, the imaging region ER2 is positioned at the end on the −Y direction side of the shot region SR2 (see FIG. 9C), and the end on the + Y direction side. The sheet SH moves in the −Y direction so that the shot region SR2 is scanned by the imaging region ER2 until the end position (see FIG. 10A) located in the section is reached. Thus, the pattern in the pattern area PA2 of the mask M is scanned and exposed in the shot area SR2.

  Since the formation position of the imaging region ER1 is out of the range of the shot region SR2 when the sheet SH has passed the scanning exposure end position on the shot region SR2 (see FIG. 10A), the mask stage MS Waiting for the direction change to the + Y direction and the arrival at the required speed, scanning exposure for the next shot region SR1 is started. Specifically, an inverted image of the first pattern is formed in the imaging region ER1, but the image of the second pattern is not formed in the imaging region ER2, and the illumination region IR1 is located on the + Y direction side of the pattern region PA1. Until the end position (see FIG. 10 (c)) located at the end on the −Y direction side is reached from the starting position (see FIG. 10 (b)) located at the end, the pattern area PA1 is defined by the illumination area IR1. The mask M is moved at a required speed in the + Y direction so as to be scanned. Corresponding to the movement of the mask M in the + Y direction, the end portion on the + Y direction side from the starting position (see FIG. 10B) where the imaging region ER1 is positioned at the end portion on the −Y direction side of the shot region SR1 The sheet SH moves in the −Y direction so that the shot area SR1 is scanned by the imaging area ER1 until the end position (see FIG. 10C) is reached. In this way, the pattern in the pattern area PA1 of the mask M is scanned and exposed in the next shot area SR1.

  In each of the above-described embodiments, the present invention is applied to the projection optical system PL having an enlargement magnification. However, the present invention is not limited to this, and the present invention can be similarly applied to, for example, a projection optical system having the same magnification or a projection optical system having a reduction magnification.

  In each of the above-described embodiments, the present invention is applied to an exposure apparatus that performs scanning exposure on a flexible strip-shaped photosensitive substrate. However, the present invention is not limited to a strip-like shape having flexibility, and the present invention is generally applicable to an exposure apparatus that exposes a mask pattern on a photosensitive substrate.

  The exposure apparatus of the above-described embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  A semiconductor device, a liquid crystal device, or the like can be manufactured using the exposure apparatus according to the above-described embodiment. FIG. 11 is a flowchart showing a manufacturing process of a semiconductor device. As shown in FIG. 11, in the semiconductor device manufacturing process, a metal film is vapor-deposited on a wafer to be a semiconductor device substrate (step S40), and a photoresist, which is a photosensitive material, is applied onto the vapor-deposited metal film ( Step S42). Subsequently, using the exposure apparatus of the above-described embodiment, the pattern formed on the mask M is transferred to each shot area on the wafer (step S44: exposure process), and the development of the wafer after the transfer, that is, the pattern is transferred. The transferred photoresist is developed (step S46: development step).

  Thereafter, the resist pattern generated on the surface of the wafer in step S46 is used as a mask for wafer processing, and processing such as etching is performed on the surface of the wafer (step S48: processing step). Here, the resist pattern is a photoresist layer (transfer pattern layer) in which unevenness having a shape corresponding to the pattern transferred by the exposure apparatus of the above-described embodiment is generated, and the recess penetrates the photoresist layer. It is what you are doing. In step S48, the surface of the wafer is processed through this resist pattern. The processing performed in step S48 includes, for example, at least one of etching of the wafer surface or film formation of a metal film or the like. As described above, in steps S46 and S48, the wafer on which the pattern is transferred in step S44 is processed. In step S44, the exposure apparatus according to the above-described embodiment performs pattern transfer using the photoresist-coated wafer as a photosensitive substrate.

  FIG. 12 is a flowchart showing a manufacturing process of a liquid crystal device such as a liquid crystal display element. As shown in FIG. 12, in the liquid crystal device manufacturing process, a pattern formation process (step S50), a color filter formation process (step S52), a cell assembly process (step S54), and a module assembly process (step S56) are sequentially performed. In the pattern forming step in step S50, predetermined patterns such as a circuit pattern and an electrode pattern are formed on the glass substrate coated with a photoresist as the photosensitive substrate, using the exposure apparatus of the above-described embodiment. This pattern forming step includes an exposure step of transferring the pattern to the photoresist layer using the exposure apparatus of the above-described embodiment, and a processing step of processing the photosensitive substrate to which this pattern is transferred. Further, in the processing step for processing the photosensitive substrate, development of the photosensitive substrate to which the pattern is transferred, that is, development of the photoresist layer on the glass substrate is performed, and a photoresist layer (transfer pattern) having a shape corresponding to the pattern is developed. And a processing step of processing the surface of the glass substrate through the developed photoresist layer. The processing of the surface of the glass substrate in this processing step includes etching the surface of the glass substrate or depositing or applying a predetermined material on the surface of the glass substrate.

  In the color filter forming process in step S52, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning direction. In the cell assembly process in step S54, a liquid crystal panel (liquid crystal cell) is assembled using the glass substrate on which the predetermined pattern is formed in step S50 and the color filter formed in step S52. Specifically, for example, a liquid crystal panel is formed by injecting liquid crystal between a glass substrate and a color filter. In the module assembling process in step S56, various components such as an electric circuit and a backlight for performing the display operation of the liquid crystal panel are attached to the liquid crystal panel assembled in step S54.

  Further, the present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor device or a liquid crystal device. The present invention can also be widely applied to exposure apparatuses for manufacturing various devices such as micromachines, thin film magnetic heads, and DNA chips. Furthermore, the present invention can also be applied to an exposure process (exposure apparatus) when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithography process.

LS1, LS2 Light source IL1, IL2 Illumination system IR1, IR2 Illumination area ER1, ER2 Imaging area M1, M2 Mask MS1, MS2 Mask stage PL Projection optical system G1, G2 Intermediate imaging optical system G3 Common imaging optical system SH Band-shaped Seat SC Movement mechanism DR Drive control system CR Main control system

Claims (17)

A moving mechanism for moving the photosensitive substrate along the scanning direction;
A first stage holding a first mask having a first pattern and moving in a first direction along the scanning direction corresponding to the movement of the substrate in the scanning direction, and a second pattern having a second pattern A stage mechanism having a second stage that holds two masks and moves in a second direction opposite to the first direction along the scanning direction in response to the movement of the substrate in the scanning direction; ,
A first illumination system that forms a first illumination area on the first mask held on the first stage, and a second illumination area that forms a second illumination area on the second mask held on the second stage mechanism. An illumination optical system having two illumination systems;
A first imaging system for forming, in the first imaging region on the substrate, a first projection image inverted in the scanning direction of the first pattern in the first illumination region; and the first pattern in the second illumination region. A projection optical system having a second imaging system for forming a second projection image erecting in the scanning direction of the second pattern in a second imaging region spaced from the first imaging region in the scanning direction; An exposure apparatus comprising: At least one of the projection optical system and the illumination optical system supplies light from the first illumination area to the first imaging area in response to movement of the first stage in the first direction, and 2. The exposure according to claim 1, further comprising a selection supply unit that supplies light from the second illumination region to the second imaging region in response to movement of the second stage in the second direction. apparatus. The exposure apparatus according to claim 2, wherein the first imaging system and the second imaging system have optical members that are coaxial with each other. The first imaging system includes a first intermediate imaging optical system that forms a first intermediate image of the pattern based on light from the first illumination area, and an optical system that is common to the second imaging system. A common imaging optical system for forming the first projection image based on light from the first intermediate image,
The second imaging system includes a second intermediate imaging optical system that forms a second intermediate image of the pattern based on light from the second illumination region, and the light based on the light from the second intermediate image. The exposure apparatus according to claim 3, further comprising the common imaging optical system that forms a second projection image. The selective supply unit includes first light guided to the common imaging optical system via the first illumination region and the first intermediate imaging optical system, or the second illumination region and the second intermediate imaging optical. The exposure apparatus according to claim 4, further comprising a light-shielding portion that selectively blocks the second light guided to the common imaging optical system via a system. 6. The exposure apparatus according to claim 1, wherein the substrate is a belt-like sheet having flexibility. The said stage mechanism has a common stage which makes the said 1st stage and the said 2nd stage reciprocate synchronously along the said scanning direction, The any one of Claim 1 thru | or 6 characterized by the above-mentioned. Exposure device. The exposure apparatus according to claim 1, wherein the illumination optical system has an optical system common to the first illumination system and the second illumination system. The exposure apparatus according to claim 1, wherein the first projection image and the second projection image have the same size. 6. The exposure apparatus according to claim 4, wherein the common imaging optical system is a refractive optical system. 6. The exposure apparatus according to claim 4, wherein at least one of the first intermediate imaging optical system and the second intermediate imaging optical system is a catadioptric optical system. 6. The exposure apparatus according to claim 4, wherein at least one of the first intermediate imaging optical system and the second intermediate imaging optical system includes a reflecting member having a roof surface. Moving the photosensitive substrate along the scanning direction;
Holding a first mask having a first pattern and moving the substrate in a first direction along the scanning direction in response to the movement of the substrate in the scanning direction;
Holding a second mask having a second pattern and moving the substrate in a second direction opposite to the first direction along the scanning direction in response to the movement of the substrate in the scanning direction; ,
Forming a first illumination region on the first mask;
Forming a second illumination region on the second mask;
Corresponding to the movement of the first mask in the first direction, the first projection image inverted in the scanning direction of the first pattern in the first illumination area is formed on the first imaging area on the substrate. Forming a second projection image erecting in the scanning direction of the second pattern in the second illumination area corresponding to the movement of the second mask in the second direction; Forming in a second imaging region spaced from each other in the scanning direction. 14. The exposure method according to claim 13, wherein the first mask and the second mask are reciprocated synchronously along the scanning direction. 15. The exposure method according to claim 13, wherein a strip-shaped sheet having flexibility is used as the substrate. 16. The exposure method according to claim 13, wherein images having the same size are formed as the first projection image and the second projection image. An exposure step of exposing the substrate to a pattern including the first pattern and the second pattern using the exposure apparatus according to claim 1;
A processing step of processing the substrate on which the pattern is exposed based on the pattern;
A device manufacturing method comprising:

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