JP2011068648A - Chemically amplified positive resist composition, (meth)acrylate derivative and method for producing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resist composition which is suitable for ArF excimer laser lithography and has preferable line edge roughness in addition to performances such as resolution, sensitivity and a pattern shape, and to provide a chemically amplified positive resist composition in which the pattern can be more finely divided in a reflow process. <P>SOLUTION: A radiation-sensitive composition includes a resin which has a recurring unit represented by formula (I) (wherein X is a hydrogen atom, 1-4C alkyl or 1-4C perfluoroalkyl. Y is a plurality of atoms required for completing an alicyclic hydrocarbon group together with the described carbon atoms. Z is a bivalent 1-12C hydrocarbon group. R is a 1-6C alkyl or a 3-12C alicyclic hydrocarbon group) and at least one recurring unit selected from the group consisting of certain four recurring units, and an acid generator. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a chemically amplified resist composition used for semiconductor microfabrication, a component resin of the composition, a (meth) acrylic acid derivative used as a raw material for the component resin of the composition, and a method for producing the same.

In microfabrication of semiconductors, a lithography process using a resist composition is usually employed. In lithography, in principle, the exposure wavelength is expressed as expressed by the Rayleigh diffraction limit equation. The shorter the resolution, the higher the resolution. The exposure light source for lithography used in the manufacture of semiconductors has become a shorter wavelength year by year, with g-line with a wavelength of 436 nm, i-line with a wavelength of 365 nm, KrF excimer laser with a wavelength of 248 nm, and ArF excimer laser with a wavelength of 193 nm. As an exposure light source, an F ₂ excimer laser having a wavelength of 157 nm and a soft X-ray (EUV) having a wavelength of 13 nm or less have been proposed as a light source.

In lithography processes using short wavelengths such as excimer lasers, as the line width becomes narrower, improvements in performance such as resolution, sensitivity, and pattern shape are issues in terms of resist performance. In particular, line edge roughness (pattern Surface roughness, pattern undulation, and LER) are important issues. (For example, see Non-Patent Document 1)
On the other hand, on the process side, after forming a pattern by applying, exposing, and developing a resist, the resist is swollen by high-temperature baking, thereby narrowing the width of the valleys and the diameter of the holes to refine the pattern. There is a technique for adding (hereinafter referred to as “reflow process”) (see, for example, Patent Document 1).

JP-A-9-213603 (pages 1 to 3)

Proc. Of SPIE Vol.5038 (2003) p.689-698

With further advancement of microfabrication technology, there is a demand for better performance, such as resolution, sensitivity, pattern shape, and line edge roughness, than those of conventional chemically amplified resist compositions. Furthermore, a resist composition suitable for the above-described reflow process may be desired.
The object of the present invention is to provide a resist composition that is suitable for ArF excimer laser lithography, such as resolution, sensitivity, and pattern shape, in particular, good line edge roughness, and finer patterns in the reflow process. It is an object of the present invention to provide a chemically amplified positive resist composition.
Moreover, the objective of this invention is providing the novel monomer of the resin which is a component of the said resist composition, and its manufacturing method.

  As a result of intensive studies, the present inventors have attempted to solve the above problems by using a resin into which a specific repeating unit has been introduced. That is, a chemically amplified positive resist containing a resin in which a linking group is introduced into a repeating unit and a (meth) acrylic acid ester derivative in which an acid dissociable group is located away from the main chain is introduced and an acid generator It has been found that the composition has various resist performances such as resolution, good line edge roughness, and can be applied in a reflow process, and has completed the present invention.

（式中、Ｘは、水素原子、炭素数１〜４のアルキル又は炭素数１〜４のペルフルオロアルキルを示す。Ｙは、記載の炭素原子（Ｒと結合している炭素原子）とともに脂環式炭化水素基を完成するのに必要な複数の原子を示す。
Ｚは、炭素数１〜１２の２価の炭化水素基を示す。
Ｒは、炭素数１〜６のアルキル又は炭素数３〜１２の脂環式炭化水素基を示す。）
と式(II)〜(V)で示される繰り返し単位からなる群から選ばれた少なくとも一つの繰り返し単位（ただし、式(I)で示される繰り返し単位とは異なる。）とを有する樹脂及び酸発生剤を含む感放射線組成物に係るものである。 That is, the present invention provides [1] a repeating unit represented by the formula (I)

(In the formula, X represents a hydrogen atom, an alkyl having 1 to 4 carbon atoms or a perfluoroalkyl having 1 to 4 carbon atoms. Y represents an alicyclic group together with the described carbon atom (a carbon atom bonded to R). The atoms required to complete the hydrocarbon group are shown.
Z shows a C1-C12 bivalent hydrocarbon group.
R shows a C1-C6 alkyl or a C3-C12 alicyclic hydrocarbon group. )
And at least one repeating unit selected from the group consisting of repeating units represented by formulas (II) to (V) (however, different from the repeating unit represented by formula (I)) and acid generation The present invention relates to a radiation-sensitive composition containing an agent.

(Wherein, X ¹ to X ⁴ are each independently hydrogen atom, a perfluoroalkyl of 1 to 4 alkyl carbon atoms or 1 to 4 carbon atoms.
Y has the same definition as above, and Y represents a plurality of atoms necessary to complete the alicyclic hydrocarbon group together with the carbon atom described (the carbon atom bonded to R ¹ ).
Z < ¹ > -Z < ⁴ > shows a C1-C12 bivalent hydrocarbon group mutually independently.
n ¹ ~n ⁴ are each independently an integer of 0 to 3.
R ¹ represents alkyl having 1 to 6 carbons or cycloalkyl having 3 to 12 carbons.
A shows a C1-C12 hydrocarbon group.
R ² and R ³ each independently represent a hydroxyl group or hydroxymethyl.
G represents — (CO) O— or —O—.
R ⁴ represents alkyl having 1 to 4 carbons or alkoxy having 1 to 4 carbons.
p and q each independently represent an integer of 0 to 2. )

（式中、Ｘ¹¹は、水素原子、メチル又はトリフルオロメチルを示す。
Ｒ¹¹がメチルであり、Ｙ²が記載の炭素原子（Ｒ¹¹と結合している炭素原子）とともにアダマンタン骨格を完成し、かつＺ⁷がメチレン、トリメチレンもしくはテトラメチレンであるか；又はＲ¹¹がエチル、イソプロピルもしくはブチルであり、Ｙ²が記載の炭素原子とともにアダマンタン骨格を完成し、かつＺ⁷がメチレン、エチレン、トリメチレンもしくはテトラメチレンであるか；又はＲ¹¹がメチル、エチル、イソプロピルもしくはブチルであり、Ｙ²がテトラメチレン、ペンタメチレンか、もしくは記載の炭素原子とともにノルボルネン骨格を完成し、かつＺ⁷がメチレン、エチレン、トリメチレンもしくはテトラメチレンである。） The present invention also relates to [2] a (meth) acrylic acid derivative represented by the formula (XII).

(In the formula, X ¹¹ represents a hydrogen atom, methyl or trifluoromethyl.
R ¹¹ is methyl and Y ² completes the adamantane skeleton with the carbon atom described (carbon atom bonded to R ¹¹ ) and Z ⁷ is methylene, trimethylene or tetramethylene; or R ¹¹ is Is ethyl, isopropyl or butyl, Y ² completes the adamantane skeleton with the described carbon atoms, and Z ⁷ is methylene, ethylene, trimethylene or tetramethylene; or R ¹¹ is methyl, ethyl, isopropyl or butyl Yes, Y ² is tetramethylene, pentamethylene or completes the norbornene skeleton with the described carbon atoms and Z ⁷ is methylene, ethylene, trimethylene or tetramethylene. )

（式中、Ｘ¹²は、水素原子、メチル又はトリフルオロメチルを示す。
Ｚ⁸は、エチレン、トリメチレン、テトラメチレン、メチルカルボニル、エチルカルボニル、プロピルカルボニル又はブチルカルボニルを示す。） Furthermore, the present invention relates to [3] a (meth) acrylic acid derivative represented by the formula (XIII).

(In the formula, X ¹² represents a hydrogen atom, methyl or trifluoromethyl.
Z ⁸ represents ethylene, trimethylene, tetramethylene, methylcarbonyl, ethylcarbonyl, propylcarbonyl or butylcarbonyl. )

（式中、Ｘ¹³は、水素原子、メチル又はトリフルオロメチルを示す。Ｚ⁹は、メチレン、エチレン、トリメチレン又はテトラメチレンを示す。ｐ²は、０又は１である。） Furthermore, the present invention relates to (4) a (meth) acrylic acid derivative represented by the formula (XIV).

(In the formula, X ¹³ represents a hydrogen atom, methyl or trifluoromethyl. Z ⁹ represents methylene, ethylene, trimethylene or tetramethylene. P ² is 0 or 1.)

（式中、Ｙ³は、記載の炭素原子（Ｒ¹³と結合している炭素原子）とともに、シクロペンタン骨格、シクロヘキサン骨格、ノルボルネン骨格又はアダマンタン骨格を完成する。）式(XVI)で示される酸ハロゲン化物誘導体とを

（式中、Ｗ¹、Ｗ²は、互いに独立に、塩素原子、臭素原子又はヨウ素原子を示す。
上記式(XV)でＲ¹³がメチルであり、かつＹ³が記載の炭素原子とともに、アダマンタン骨格を完成するときは、Ｚ¹⁰はメチレン、トリメチレンもしくはテトラメチレンであるか；又はＲ¹³がエチル、イソプロピルもしくはブチルであり、かつＹ³が記載の炭素原子とともに、アダマンタン骨格を完成するときは、Ｚ¹⁰はメチレン、エチレン、トリメチレンもしくはテトラメチレンであるか；又はＲ¹³がメチル、エチル、イソプロピルもしくはブチルであり、かつＹ³が記載の炭素原子とともに、シクロペンタン骨格、シクロヘキサン骨格、もしくはノルボルネン骨格を完成するときは、Ｚ¹⁰は、メチレン、エチレン、トリメチレンもしくはテトラメチレンである。）
縮合させた後、得られた縮合物と式(XVII)で示されるカルボン酸と

（式中、Ｘ¹⁴は、水素原子、メチル又はトリフルオロメチルを示す。）
を脱酸剤の存在下に反応させる〔２〕に記載の（メタ）アクリル酸誘導体の製造法に係るものである。 The present invention also provides [5] an alcohol derivative represented by the formula (XV):

(In the formula, Y ³ completes a cyclopentane skeleton, cyclohexane skeleton, norbornene skeleton or adamantane skeleton together with the carbon atom (carbon atom bonded to R ¹³ )). Acid represented by the formula (XVI) With halide derivatives

(Wherein W ¹ and W ² each independently represent a chlorine atom, a bromine atom or an iodine atom.
In the above formula (XV), when R ¹³ is methyl and Y ³ together with the carbon atom described completes the adamantane skeleton, Z ¹⁰ is methylene, trimethylene or tetramethylene; or R ¹³ is ethyl, Z ¹⁰ is methylene, ethylene, trimethylene or tetramethylene when isopropyl or butyl and Y ³ together with the described carbon atom completes the adamantane skeleton; or R ¹³ is methyl, ethyl, isopropyl or butyl And when Y ³ completes a cyclopentane skeleton, cyclohexane skeleton, or norbornene skeleton together with the carbon atom described, Z ¹⁰ is methylene, ethylene, trimethylene, or tetramethylene. )
After the condensation, the resulting condensate and the carboxylic acid represented by the formula (XVII)

(In the formula, X ¹⁴ represents a hydrogen atom, methyl or trifluoromethyl.)
Is a method for producing a (meth) acrylic acid derivative according to [2].

（式中、Ｗ³は、塩素原子、臭素原子又はヨウ素原子を示す。）
式(XIX)で示される誘導体とを

（式中、Ｘ¹⁵は、水素原子、メチル又はトリフルオロメチルを示す。
Ｚ¹¹は、メチレン、エチレン、トリメチレン、テトラメチレン、メチルカルボニル、エチルカルボニル、プロピルカルボニル又はブチルカルボニルを示す。）
脱酸剤の存在下に反応させる〔３〕に記載の（メタ）アクリル酸誘導体の製造法に係るものである。 Furthermore, the present invention provides [6] a γ-butyrolactone derivative represented by the formula (XVIII) and

(Wherein, W ³ represents a chlorine atom, a bromine atom or an iodine atom.)
A derivative represented by the formula (XIX)

(In the formula, X ¹⁵ represents a hydrogen atom, methyl or trifluoromethyl.
Z ¹¹ represents methylene, ethylene, trimethylene, tetramethylene, methylcarbonyl, ethylcarbonyl, propylcarbonyl or butylcarbonyl. )
The present invention relates to the method for producing a (meth) acrylic acid derivative according to [3], which is reacted in the presence of a deoxidizing agent.

（式中、Ｒ¹⁵は、水酸基を示す。ｐ³は、０又は１を示す。）
式(XXI)で示される誘導体とを

（式中、Ｘ¹⁶は、水素原子、メチル又はトリフルオロメチルを示す。Ｚ¹⁵は、メチレン、エチレン、トリメチレン又はテトラメチレンを示す。）
酸触媒の存在下にエステル化反応させる〔４〕に記載の（メタ）アクリル酸誘導体の製造法に係るものである。
更に、本発明は、〔８〕 式(XII‘)で示される繰り返し単位

（式中、Ｘ¹¹は、水素原子、メチル又はトリフルオロメチルを示す。Ｒ¹¹がメチルであり、Ｙ²が記載の炭素原子（Ｒ¹¹と結合している炭素原子）とともにアダマンタン骨格を完成し、かつＺ⁷がメチレン、トリメチレンもしくはテトラメチレンであるか；又はＲ¹¹がエチル、イソプロピルもしくはブチルであり、Ｙ²が記載の炭素原子とともにアダマンタン骨格を完成し、かつＺ⁷がメチレン、エチレン、トリメチレンもしくはテトラメチレンであるか；又はＲ¹¹がメチル、エチル、イソプロピルもしくはブチルであり、Ｙ²がテトラメチレン、ペンタメチレンか、もしくは記載の炭素原子とともにノルボルネン骨格を完成し、かつＺ⁷がメチレン、エチレン、トリメチレンもしくはテトラメチレンである。）と式(II)〜(V)で示される繰り返し単位からなる群から選ばれた少なくとも一つの繰り返し単位（ただし、式(XII’)で示される繰り返し単位とは異なる。）とを含むことを特徴とする〔１〕に記載の（メタ）アクリル系重合体に係わるものである。

（式中、Ｘ¹〜Ｘ⁴は、互いに独立に、水素原子、炭素数１〜４のアルキル又は炭素数１〜４のペルフルオロアルキルを示す。
Ｙは、前記の定義と同じである。
Ｚ¹〜Ｚ⁴は、互いに独立に、炭素数１〜１２の２価の炭化水素基を示す。
ｎ¹〜ｎ⁴は、互いに独立に、０〜３の整数を示す。
Ｒ¹は、炭素数１〜６のアルキル又は炭素数３〜１２のシクロアルキルを示す。
Ａは、炭素数１〜１２の炭化水素基を示す。
Ｒ²、Ｒ³は、互いに独立に、水酸基又はヒドロキシメチルを示す。
Ｇは、−（ＣＯ）Ｏ−又は−Ｏ−を示す。
Ｒ⁴は、炭素数１〜４のアルキル又は炭素数１〜４のアルコキシを示す。
ｐ、ｑは、互いに独立に、０〜２の整数を示す。） Furthermore, the present invention provides [7] a hydroxyadamantane derivative represented by the formula (XX) and

(In the formula, R ¹⁵ represents a hydroxyl group. P ³ represents 0 or 1.)
A derivative represented by the formula (XXI)

(In the formula, X ¹⁶ represents a hydrogen atom, methyl or trifluoromethyl. Z ¹⁵ represents methylene, ethylene, trimethylene or tetramethylene.)
The method for producing a (meth) acrylic acid derivative according to [4], wherein the esterification reaction is performed in the presence of an acid catalyst.
Furthermore, the present invention provides [8] a repeating unit represented by the formula (XII ′)

(In the formula, X ¹¹ represents a hydrogen atom, methyl or trifluoromethyl. R ¹¹ is methyl, and Y ² completes the adamantane skeleton together with the carbon atom described above (the carbon atom bonded to R ¹¹ ). And Z ⁷ is methylene, trimethylene or tetramethylene; or R ¹¹ is ethyl, isopropyl or butyl, Y ² completes the adamantane skeleton together with the carbon atom described, and Z ⁷ is methylene, ethylene, trimethylene Or tetramethylene; or R ¹¹ is methyl, ethyl, isopropyl or butyl, Y ² is tetramethylene, pentamethylene, or completes the norbornene skeleton together with the carbon atoms described, and Z ⁷ is methylene, ethylene , Trimethylene or tetramethylene) and the repeating unit represented by the formulas (II) to (V). The (meth) acrylic group according to [1], comprising at least one repeating unit selected from the group consisting of the above units (however, different from the repeating unit represented by the formula (XII ′)) It relates to a polymer.

(Wherein, X ¹ to X ⁴ are each independently hydrogen atom, a perfluoroalkyl of 1 to 4 alkyl carbon atoms or 1 to 4 carbon atoms.
Y has the same definition as above.
Z < ¹ > -Z < ⁴ > shows a C1-C12 bivalent hydrocarbon group mutually independently.
n ¹ ~n ⁴ are each independently an integer of 0 to 3.
R ¹ represents alkyl having 1 to 6 carbons or cycloalkyl having 3 to 12 carbons.
A shows a C1-C12 hydrocarbon group.
R ² and R ³ each independently represent a hydroxyl group or hydroxymethyl.
G represents — (CO) O— or —O—.
R ⁴ represents alkyl having 1 to 4 carbons or alkoxy having 1 to 4 carbons.
p and q each independently represent an integer of 0 to 2. )

  The chemically amplified positive resist composition of the present invention is suitable for ArF excimer laser lithography, and in particular, has good line edge roughness, in addition to good resolution, sensitivity, pattern shape, etc. In the reflow process, the pattern can be made finer.

The radiation-sensitive composition of the present invention comprises at least one repeating unit selected from the group consisting of the repeating unit represented by the formula (I) and the repeating unit represented by the formulas (II) to (V) (provided that the formula A resin having a repeating unit represented by (I) and an acid generator.
In the formula (I), Y is a plurality of atoms necessary to complete the alicyclic hydrocarbon group together with the carbon atom bonded to R in which the bond is represented by a dotted line with Y in the formula (I). That is, Y is a divalent group in which a plurality of carbon atoms and hydrogen atoms are bonded to each other, and is bonded only to the carbon atom bonded to R, and together with the carbon atom, a divalent alicyclic carbonization. It is a hydrocarbon group that forms a hydrogen group.

Examples of the repeating unit represented by the formula (I) include the following, but are not limited thereto.

（式中の記号は、これまでに定義した内容と同じである。） The (meth) acrylic acid derivative represented by the formula (XXII), which is a monomer leading to the repeating unit represented by the formula (I), is obtained by condensing the formula (XXIII) and the formula (XXIV) according to the reaction formula shown below. Thereafter, it can be obtained by further reacting with the formula (XXIV ′) in the presence of a deoxidizing agent.

(The symbols in the formula are the same as previously defined.)

Examples of the alcohol derivative represented by the formula (XXIII) include, but are not limited to, the following compounds.

Examples of the acid halide represented by the formula (XXIV) include, but are not limited to, the following compounds.

  Examples of the carboxylic acid of the formula (XXIV ′) include acrylic acid, methacrylic acid, α-trifluoromethyl methacrylic acid and the like.

  The reaction of the formula (XXIII) and the formula (XXIV) is performed in an inert solvent such as toluene, tetrahydrofuran, dimethylformamide, dimethyl sulfoxide, and the reaction temperature is −30 ° C. to 200 ° C., preferably 0 ° C. ~ 100 ° C. This reaction is preferably carried out by adding a deoxidizing agent. As the deoxidizing agent, for example, an organic base such as triethylamine or pyridine, an inorganic base such as potassium carbonate or sodium hydroxide, or a mixture thereof is used. .

  The acid halide derivative of the formula (XXIV) is equivalent to 2 times, preferably equivalent to 1.5 times the amount of the alcohol derivative of the formula (XXIII). Double amount, preferably equivalent to 3 times the amount. This reaction can also be performed by adding a phase transfer catalyst such as tetrabutylammonium bromide.

  The resulting condensate can be removed by ordinary post-treatment. This condensate can also be purified by chromatography, recrystallization or distillation.

  The condensate can be further reacted with a (meth) acrylic acid derivative represented by the formula (XXIV ') in the presence of a deoxidizing agent to give a compound of the target formula (XXII).

  This reaction is performed in, for example, an inert solvent such as toluene, tetrahydrofuran, dimethylformamide, dimethyl sulfoxide, and the reaction temperature is −30 ° C. to 200 ° C., preferably 0 ° C. to 100 ° C.

  In this reaction, it is preferable to add a deoxidizing agent. For example, an organic base such as triethylamine or pyridine, an inorganic base such as potassium carbonate or sodium hydroxide, or a mixture thereof is used.

  In this reaction, the acid derivative of the formula (XXIV ′) is usually from equivalent to 2 times, preferably from equivalent to 1.5 times the amount of the intermediate condensation compound. The amount is usually from equivalent to 5 times, preferably from equivalent to 3 times.

  This reaction can also be performed by adding a phase transfer catalyst such as tetrabutylammonium bromide.

  The resulting compound of formula (XXII) can be removed by conventional post-treatment. The compound of the formula (XXII) can also be purified by chromatography, recrystallization or distillation.

The repeating unit represented by the formula (II) is not limited to these, but can be exemplified below.

  The (meth) acrylic acid derivative leading to the repeating unit represented by the formula (II) can be obtained by a reaction similar to the synthesis reaction of the (meth) acrylic acid derivative leading to the repeating unit represented by the formula (I).

The repeating unit represented by the formula (III) is not limited to these, but can be exemplified below.

  The (meth) acrylic acid derivative leading to the repeating unit represented by the formula (III) can be obtained by a reaction similar to the synthesis reaction of the (meth) acrylic acid derivative leading to the repeating unit represented by the formula (I).

  The repeating unit represented by the formula (IV) is not limited to these, but can be exemplified below.

（式中の記号は、これまでに定義した内容と同じである。） The (meth) acrylic acid derivative represented by the formula (XXV), which is a monomer that leads to the repeating unit represented by the formula (IV), is obtained by converting the formula (XXVI) and the formula (XXVII) under an acid catalyst according to the reaction formula shown below. Can be obtained by esterification reaction.

(The symbols in the formula are the same as previously defined.)

The compound represented by the formula (XXVI) is not limited to these, but can be exemplified below.

The compound represented by the formula (XXVII) is not limited to these, but can be exemplified below.

  The esterification reaction by dehydration of Formula (XXVI) and Formula (XXVII) is performed in an inert solvent such as toluene, dichloroethane, tetrahydrofuran, dimethylformamide, dimethyl sulfoxide, and the reaction temperature is −30 ° C. to 200 ° C. The temperature is preferably 0 ° C to 150 ° C.

When carrying out the azeotropic dehydration reaction, it is preferable to add an acid catalyst, for example, an inorganic acid such as sulfuric acid, an organic acid such as p-toluenesulfonic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, or Nafion. An acid catalyst resin such as a mixture of these is used. Alternatively, a (meth) acrylic acid derivative of the formula (XXVI) may be used as an acid catalyst, a reaction reagent and a solvent.
The amount of the (meth) acrylic acid derivative of the formula (XXVI) is from equivalent to large excess, preferably from equivalent to 1.5 times the amount of the alcohol derivative of the formula (XXVII). To an equivalent amount, preferably from a catalyst amount to 0.5 times the amount. It is also possible to use a dehydrating agent such as dicyclohexylcarbodiimide in the dehydrating esterification reaction without using an acid catalyst.
When a primary hydroxyl group and a secondary hydroxyl group coexist, it is preferable to inactivate the primary hydroxyl group with a protective group such as a silyl group.

  The obtained ester compound represented by the formula (XXV) can be taken out by ordinary post-treatment, and can be purified by chromatography, recrystallization or distillation.

The compound represented by the formula (V) is not limited to these, but can be exemplified below.

  The (meth) acrylic acid derivative represented by the formula (XXVIII) of the repeating unit represented by the formula (V) is esterified from the formula (XXIX) and the formula (XXX) in the presence of a base according to the reaction formula shown below. Can be obtained.

（式中の記号は、これまでに定義した内容と同じである。Ｗ³は、塩素原子、臭素原子又はヨウ素原子を示す。）

(The symbols in the formula are the same as those defined so far. W ³ represents a chlorine atom, a bromine atom or an iodine atom.)

The compound represented by the formula (XXIX) is not limited to these, but can be exemplified below.

The compound represented by the formula (XXX) is not limited to these, but can be exemplified below.

  The reaction of the formula (XXIX) and the formula (XXX) is carried out in an inert solvent such as toluene, tetrahydrofuran, dimethylformamide, dimethyl sulfoxide, and the reaction temperature is −30 ° C. to 200 ° C., preferably 0 ° C. ~ 150 ° C. In the reaction, it is preferable to add a deoxidizing agent. For example, an organic base such as triethylamine or pyridine, an inorganic base such as potassium carbonate or sodium hydroxide, or a mixture thereof is used.

The amount of the hydroxy compound of the formula (XXIX) is 2 times, preferably 1 to 1.5 times the equivalent amount of the lactone derivative of the formula (XXX). Amount, preferably equivalent to 3 times the amount.
A phase transfer catalyst such as tetrabutylammonium bromide can be added to the reaction. The resulting condensate can be removed by ordinary post-treatment. This condensate can also be purified by chromatography, recrystallization or distillation.

  Examples of the polymerization in the method for producing a resin of the present invention include radical polymerization, anionic polymerization, and coordination polymerization, among which radical polymerization is preferable.

  Although 1000-500000 is mentioned as a weight average molecular weight of resin obtained by superposition | polymerization, Preferably, it is 4000-50000.

  The polymerization initiator used here is a known one, and is not particularly limited, but is preferably one that generates radicals efficiently by heat. Examples of such a polymerization initiator include 2,2′-azobisisobutyronitrile, dimethyl 2,2′-azobisisobutyrate, 2,2′-azobis (2,4-dimethylvaleronitrile), dimethyl- Azo compounds such as 2,2′-azobisisobutyrate, organic peroxides such as 2,5-dimethyl-2,5-bis (tert-butylperoxy) hexane, t-hexylperoxypivalate, etc. Each may be used alone or in combination of two or more initiators.

  Furthermore, chain transfer agents such as 1-butanethiol, 2-butanethiol, 1-octanethiol, 1-decanethiol, 1-tetradecanethiol, cyclohexanethiol, 2-methyl-1-propanethiol can be used in combination.

The organic solvent used for the polymerization is preferably a solvent that can dissolve both the monomer, the initiator, and the resulting copolymer. Examples of such an organic solvent include hydrocarbons such as toluene, 1,4-dioxane, tetrahydrofuran, methyl isobutyl ketone, isopropyl alcohol, γ-butyrolactone, propylene glycol monomethyl ether acetate, and ethyl lactate. Two or more kinds of solvents may be mixed and used.
The reaction temperature in the method for producing a resin in the present invention is in the range of 0 to 150 ° C, preferably in the range of 40 to 100 ° C.

（Ｘ⁵は、水素原子、炭素数１〜４のアルキル又は炭素数１〜４のペルフルオロアルキルを示す。Ｙ¹は、記載の炭素原子（Ｒ⁵と結合している炭素原子）とともに炭素数２〜１２の脂環式炭化水素基を完成するのに必要な複数の原子を示す。Ｚ⁵は、炭素数１〜１２の２価の炭化水素基を示す。Ｒ⁵は、炭素数１〜６のアルキル又は炭素数３〜１２の脂環式炭化水素基を示す。）と式(III)、(VII)、(VIII)で示される繰り返し単位からなる群から選ばれた少なくとも一つの繰り返し単位（ただし、式(VI)で示される繰り返し単位とは異なる。）とを有する〔１〕に記載の感放射線組成物が挙げられる。

（式中、Ｘ²、Ｘ⁶、Ｘ⁷は、水素原子、炭素数１〜４のアルキル又は炭素数１〜４のペルフルオロアルキルを示す。
Ａは、炭素数１〜１２の炭化水素基を示す。
Ｚ²は、炭素数１〜１２の２価の炭化水素基を示す。
ｎ²は、０〜３の整数を示す。
Ｒ⁶、Ｒ⁷は、互いに独立に、水酸基又はヒドロキシメチルを示す。
Ｒ⁸は、炭素数１〜４のアルキル又は炭素数１〜４のアルコキシを示す。
ｒ、ｓは、互いに独立に、０〜２の整数を示す。） As the radiation-sensitive composition of the present invention, preferably, the resin is a repeating unit represented by the formula (VI)

(X ⁵ represents a hydrogen atom, alkyl having 1 to 4 carbon atoms, or perfluoroalkyl having 1 to 4 carbon atoms. Y ¹ has 2 carbon atoms together with the carbon atom described (carbon atom bonded to R ⁵ ). A plurality of atoms necessary to complete an alicyclic hydrocarbon group having ˜12, Z ⁵ represents a divalent hydrocarbon group having 1 to 12 carbon atoms, and R ⁵ represents 1 to 6 carbon atoms. Or an alicyclic hydrocarbon group having 3 to 12 carbon atoms) and at least one repeating unit selected from the group consisting of repeating units represented by formulas (III), (VII), and (VIII) ( However, the radiation-sensitive composition according to [1], which is different from the repeating unit represented by the formula (VI).

^{(Wherein, X 2, X 6, X} 7 is a hydrogen atom, a perfluoroalkyl of 1 to 4 alkyl carbon atoms or 1 to 4 carbon atoms.
A shows a C1-C12 hydrocarbon group.
Z ² represents a divalent hydrocarbon group having 1 to 12 carbon atoms.
n ² represents an integer of 0 to 3.
R ⁶ and R ⁷ each independently represent a hydroxyl group or hydroxymethyl.
R ⁸ represents alkyl having 1 to 4 carbons or alkoxy having 1 to 4 carbons.
r and s each independently represent an integer of 0 to 2. )

（Ｘ⁸は、水素原子、炭素数１〜４のアルキル又は炭素数１〜４のペルフルオロアルキルを示す。
Ｚ⁶は、メチレン、エチレン、トリメチレン又はテトラメチレンを示す。
Ｒ⁹は、炭素数１〜４のアルキルを示す。）
と式(VII)および(VIII)で示される繰り返し単位からなる群から選ばれた少なくとも一つの繰り返し単位とを有する〔１〕に記載の感放射線組成物が挙げられる。

（式中、Ｘ⁶、Ｘ⁷は、互いに独立に、水素原子、炭素数１〜４のアルキル又は炭素数１〜４のペルフルオロアルキルを示す。Ｒ⁶、Ｒ⁷は、互いに独立に、水酸基又はヒドロキシメチルを示す。Ｒ⁸は、炭素数１〜４のアルキル又は炭素数１〜４のアルコキシを示す。ｒ、sは、互いに独立に、０〜２の整数を示す。） Further, as the radiation-sensitive composition of the present invention, more preferably, the resin is a repeating unit represented by the formula (IX).

(X < ⁸ > shows a hydrogen atom, a C1-C4 alkyl, or a C1-C4 perfluoroalkyl.
Z ⁶ represents methylene, ethylene, trimethylene or tetramethylene.
R ⁹ represents an alkyl having 1 to 4 carbon atoms. )
And at least one repeating unit selected from the group consisting of repeating units represented by formulas (VII) and (VIII).

(In the formula, X ⁶ and X ⁷ each independently represent a hydrogen atom, an alkyl having 1 to 4 carbon atoms or a perfluoroalkyl having 1 to 4 carbon atoms. R ⁶ and R ⁷ are each independently a hydroxyl group or R ⁸ represents alkyl having 1 to 4 carbon atoms or alkoxy having 1 to 4 carbon atoms, and r and s each independently represent an integer of 0 to 2.

（式中、Ｘ⁸は、水素原子又はメチルを示す。
Ｒ⁹は、メチル、エチル、イソプロピル又はブチルを示す。）
と式(XI)、(VIII’)で示される繰り返し単位からなる群から選ばれた少なくとも一つの繰り返し単位とを有する〔１〕に記載の感放射線組成物に係るものである。

（式中、Ｘ⁹、Ｘ¹⁰は、互いに独立に、水素原子又はメチルを示す。Ｒ⁹は、水酸基又はヒドロキシメチルを示す。Ｒ¹⁰は、水酸基又はヒドロキシメチルを示す。ｐ¹は、０又は１である。） Further, as the radiation-sensitive composition of the present invention, more preferably, the resin is a repeating unit represented by the formula (X).

(In the formula, X ⁸ represents a hydrogen atom or methyl.
R ⁹ represents methyl, ethyl, isopropyl or butyl. )
And at least one repeating unit selected from the group consisting of repeating units represented by formulas (XI) and (VIII ′).

(In the formula, X ⁹ and X ¹⁰ each independently represent a hydrogen atom or methyl. R ⁹ represents a hydroxyl group or hydroxymethyl. R ¹⁰ represents a hydroxyl group or hydroxymethyl. P ¹ represents 0 or 1)

Next, the acid generator in the radiation sensitive composition of this invention is demonstrated.
The acid generator in the resist composition of the present invention generates an acid by decomposition of the substance by applying radiation such as light or electron beam to the substance itself or to the resist composition containing the substance. Is. The acid generated from the acid generator acts on the resin and cleaves the group that is cleaved by the action of the acid present in the resin. Such acid generators include, for example, onium salt compounds, organic halogen compounds, sulfone compounds, sulfonate compounds and the like. Specifically, the following compounds can be mentioned.

Diphenyliodonium trifluoromethanesulfonate,
4-methoxyphenylphenyliodonium hexafluoroantimonate,
4-methoxyphenylphenyliodonium trifluoromethanesulfonate,
Bis (4-tert-butylphenyl) iodonium tetrafluoroborate,
Bis (4-tert-butylphenyl) iodonium hexafluorophosphate,
Bis (4-tert-butylphenyl) iodonium hexafluoroantimonate,
Bis (4-tert-butylphenyl) iodonium trifluoromethanesulfonate,

Triphenylsulfonium hexafluorophosphate,
Triphenylsulfonium hexafluoroantimonate,
Triphenylsulfonium trifluoromethanesulfonate,
Triphenylsulfonium adamantane methoxycarbonyldifluoromethylsulfonate triphenylsulfonium 1- (3-hydroxymethyladamantane) methoxycarbonyldifluoromethylsulfonate 4-methoxyphenyldiphenylsulfonium hexafluoroantimonate,
4-methoxyphenyldiphenylsulfonium trifluoromethanesulfonate,
p-tolyldiphenylsulfonium trifluoromethanesulfonate,
p-tolyldiphenylsulfonium perfluorooctane sulfonate,
2,4,6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate,
4-tert-butylphenyldiphenylsulfonium trifluoromethanesulfonate,
4-phenylthiophenyldiphenylsulfonium hexafluorophosphate,
4-phenylthiophenyldiphenylsulfonium hexafluoroantimonate, 1- (2-naphthoylmethyl) thiolanium hexafluoroantimonate,
1- (2-naphthoylmethyl) thiolanium trifluoromethanesulfonate,
4-hydroxy-1-naphthyldimethylsulfonium hexafluoroantimonate,
4-hydroxy-1-naphthyldimethylsulfonium trifluoromethanesulfonate,

2-methyl-4,6-bis (trichloromethyl) -1,3,5-triazine,
2,4,6-tris (trichloromethyl) -1,3,5-triazine,
2-phenyl-4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (4-chlorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (4-methoxyphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (4-methoxy-1-naphthyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (benzo [d] [1,3] dioxolan-5-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (4-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (3,4,5-trimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (3,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (2,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (2-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (4-butoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
2- (4-pentyloxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,

1-benzoyl-1-phenylmethyl p-toluenesulfonate (commonly known as benzoin tosylate),
2-benzoyl-2-hydroxy-2-phenylethyl p-toluenesulfonate (commonly known as α-methylol benzoin tosylate),
1,2,3-benzenetriyl trismethanesulfonate,
2,6-dinitrobenzyl p-toluenesulfonate,
2-nitrobenzyl p-toluenesulfonate,
4-nitrobenzyl p-toluenesulfonate,

Diphenyl disulfone,
Di-p-tolyl disulfone,
Bis (phenylsulfonyl) diazomethane,
Bis (4-chlorophenylsulfonyl) diazomethane,
Bis (p-tolylsulfonyl) diazomethane,
Bis (4-tert-butylphenylsulfonyl) diazomethane,
Bis (2,4-xylylsulfonyl) diazomethane,
Bis (cyclohexylsulfonyl) diazomethane,
(Benzoyl) (phenylsulfonyl) diazomethane,

N- (phenylsulfonyloxy) succinimide,
N- (trifluoromethylsulfonyloxy) succinimide,
N- (trifluoromethylsulfonyloxy) phthalimide,
N- (trifluoromethylsulfonyloxy) -5-norbornene-2,3-dicarboximide,
N- (trifluoromethylsulfonyloxy) naphthalimide,
N- (10-camphorsulfonyloxy) naphthalimide and the like.

  In addition, in the chemically amplified resist composition of the present invention, a basic compound, particularly a basic nitrogen-containing organic compound such as an amine, is added as a quencher, so that the amount of acid lost due to holding after exposure is lost. It can improve performance degradation due to life. Specific examples of the basic compound used for the quencher include those represented by the following formulas.

In the formula, R ⁶¹ , R ⁶² and R ⁶⁷ each independently represent a hydrogen atom, alkyl, cycloalkyl or aryl. The alkyl preferably has about 1 to 6 carbon atoms, the cycloalkyl preferably has about 5 to 10 carbon atoms, and the aryl preferably has about 6 to 10 carbon atoms. Have Furthermore, at least one of the hydrogen atoms on the alkyl, cycloalkyl or aryl may each independently be substituted with hydroxyl, amino, or alkoxy having 1 to 6 carbon atoms. At least one hydrogen atom on the amino may be independently substituted with an alkyl group having 1 to 4 carbon atoms.

R ⁶³ , R ⁶⁴ and R ⁶⁵ each independently represent a hydrogen atom, alkyl, cycloalkyl, aryl or alkoxy. The alkyl preferably has about 1 to 6 carbon atoms, the cycloalkyl preferably has about 5 to 10 carbon atoms, and the aryl preferably has about 6 to 10 carbon atoms. Having atoms, the alkoxy preferably has 1 to 6 carbon atoms.
Furthermore, at least one hydrogen atom on the alkyl, cycloalkyl, aryl, or alkoxy may be each independently substituted with hydroxyl, amino, or alkoxy having about 1 to 6 carbon atoms. At least one of the hydrogen atoms on the amino may be substituted with alkyl having 1 to 4 carbon atoms.

R ⁶⁶ represents alkyl or cycloalkyl. The alkyl preferably has about 1 to 6 carbon atoms, and the cycloalkyl preferably has about 5 to 10 carbon atoms. Furthermore, at least one of the hydrogen atoms on the alkyl or cycloalkyl may be independently substituted with hydroxyl, amino, or an alkoxy group having 1 to 6 carbon atoms. At least one of the hydrogen atoms on the amino may be substituted with alkyl having 1 to 4 carbon atoms.

R ⁶⁷ , R ⁶⁸ , R ⁶⁹ and R ⁷⁰ each independently represents alkyl, cycloalkyl or aryl. The alkyl preferably has about 1 to 6 carbon atoms, the cycloalkyl preferably has about 5 to 10 carbon atoms, and the aryl preferably has about 6 to 10 carbon atoms. Has atoms. Furthermore, at least one of the hydrogen atoms on the alkyl, cycloalkyl or aryl may be independently substituted with hydroxyl, amino, or an alkoxy group having 1 to 6 carbon atoms. At least one of the hydrogen atoms on the amino may be substituted with alkyl having 1 to 4 carbon atoms.

A represents alkylene, carbonyl, imino, sulfide or disulfide. The alkylene preferably has about 2 to 6 carbon atoms.
Further, in R ^{21 to} R ³⁰ , any of those that can take both a linear structure and a branched structure may be used.

  Specific examples of such compounds include hexylamine, heptylamine, octylamine, nonylamine, decylamine, aniline, 2-, 3- or 4-methylaniline, 4-nitroaniline, 1- or 2-naphthylamine, and ethylenediamine. Tetramethylenediamine, hexamethylenediamine, 4,4'-diamino-1,2-diphenylethane, 4,4'-diamino-3,3'-dimethyldiphenylmethane, 4,4'-diamino-3,3'- Diethyldiphenylmethane, dibutylamine, dipentylamine, dihexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, N-methylaniline, piperidine, diphenylamine, triethylamine, trimethylamine, tripropylamine, tributylamine , Tripentylamine, trihexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, methyldibutylamine, methyldipentylamine, methyldihexylamine, methyldicyclohexylamine, methyldiheptylamine, methyldioctylamine Methyldinonylamine, methyldidecylamine, ethyldibutylamine, ethyldipentylamine, ethyldihexylamine, ethyldiheptylamine, ethyldioctylamine, ethyldinonylamine, ethyldidecylamine, dicyclohexylmethylamine, tris [2- (2-methoxyethoxy) ethyl] amine, triisopropanolamine, N, N-dimethylaniline, 2,6-isopropylaniline, imidazole, pyridine, -Methylpyridine, 4-methylimidazole, bipyridine, 2,2'-dipyridylamine, di-2-pyridyl ketone, 1,2-di (2-pyridyl) ethane, 1,2-di (4-pyridyl) ethane, 1,3-di (4-pyridyl) propane, 1,2-bis (2-pyridyl) ethylene, 1,2-bis (4-pyridyl) ethylene, 1,2-bis (4-pyridyloxy) ethane, 4 , 4'-dipyridyl sulfide, 4,4'-dipyridyl disulfide, 1,2-bis (4-pyridyl) ethylene, 2,2'-dipicolylamine, 3,3'-dipicolylamine, tetramethylammonium hydroxide Tetraisopropylammonium hydroxide, tetrabutylammonium hydroxide, tetra-n-hexylammonium hydroxide, tetra-n- Examples include octylammonium hydroxide, phenyltrimethylammonium hydroxide, 3-trifluoromethylphenyltrimethylammonium hydroxide, (2-hydroxyethyl) trimethylammonium hydroxide (common name: choline), and the like.

  Furthermore, a hindered amine compound having a piperidine skeleton as disclosed in JP-A-11-52575 can be used as a quencher.

(Composition ratio of the composition)
The resist composition of the present invention preferably contains the resin in the range of 80 to 99.9% by weight and the acid generator in the range of 0.1 to 20% by weight based on the total weight of the resin and the acid generator. . Moreover, when using the basic compound as a quencher, it is preferable to contain in 0.001-1 weight part with respect to 100 weight part of this resin, Furthermore, in 0.01-0.3 weight part. This composition can also contain small amounts of various additives such as sensitizers, dissolution inhibitors, other resins, surfactants, stabilizers, and dyes as required.

  The resist composition of the present invention usually becomes a resist solution in a state where each of the above components is dissolved in a solvent, and is applied onto a substrate such as a silicon wafer. The solvent used here may be any solvent that dissolves each component, has an appropriate drying rate, and gives a uniform and smooth coating film after the solvent evaporates, and a solvent generally used in this field is used. Yes. For example, glycol ether esters such as ethyl cellosolve acetate, methyl cellosolve acetate and propylene glycol monomethyl ether acetate, ethers such as diethylene glycol dimethyl ether, esters such as ethyl lactate, butyl acetate, amyl acetate and ethyl pyruvate, acetone And ketones such as methyl isobutyl ketone, 2-heptanone and cyclohexanone, and cyclic esters such as γ-butyrolactone. These solvents can be used alone or in combination of two or more.

  The resist film coated and dried on the substrate is subjected to an exposure process for patterning, followed by a heat treatment for promoting a deprotecting group reaction, and then developed with an alkali developer. The alkaline developer used here may be various alkaline aqueous solutions used in this field, but generally an aqueous solution of tetramethylammonium hydroxide or (2-hydroxyethyl) trimethylammonium hydroxide (commonly called choline) is used. Often used.

Next, the novel (meth) acrylic acid derivative of the present invention will be described.
As the monomer for leading either the repeating unit (I) or (II), a compound represented by the formula (XII) can be preferably used.
As the (meth) acrylic acid derivative represented by the above formula (XII), as a resist raw material, X ¹¹ is preferably a hydrogen atom, methyl or trifluoromethyl, Z ⁷ is preferably methylene, ethylene or trimethylene, and R ¹¹ is R ^11. Methyl, ethyl, and isopropyl are preferable, and it is preferable that Y ² is pentamethylene or an adamantane skeleton or a norbornane skeleton is completed together with the described carbon atom.

As the monomer for deriving the repeating unit (V), a compound represented by the formula (XIII) can be preferably used.
As the (meth) acrylic acid derivative represented by the above formula (XIII), as a resist raw material, X ¹² is preferably a hydrogen atom, methyl or trifluoromethyl, and Z ⁸ is ethylene, trimethylene, methylcarbonyl, ethylcarbonyl or propyl. Carbonyl is preferred.

As the monomer for deriving the repeating unit (IV), a compound represented by the formula (XIV) can be preferably used.
As the (meth) acrylic acid derivative represented by the above formula (XIV), as a resist raw material, X ¹³ is preferably a hydrogen atom, methyl or trifluoromethyl, Z ⁹ is preferably methylene, ethylene or trimethylene, and p ² is 0 or 1 is preferred.

  These (meth) acrylic acid derivatives are obtained by the synthesis method described above. That is, the (meth) acrylic acid derivative (XII) can be obtained by the above synthesis method in the same manner as the (meth) acrylic acid derivative (XXII). Further, the (meth) acrylic acid derivative (XIII) can be obtained by the above synthesis method in the same manner as the (meth) acrylic acid derivative (XXVIII). Further, the (meth) acrylic acid derivative (XIV) is obtained by the above synthesis method in the same manner as the (meth) acrylic acid derivative (XXV).

  While the embodiments of the present invention have been described above, the embodiments of the present invention disclosed above are merely examples, and the scope of the present invention is not limited to these embodiments. The scope of the present invention is defined by the terms of the claims, and further includes meanings equivalent to the description of the claims and all modifications within the scope.

  EXAMPLES Next, although an Example is given and this invention is demonstrated further more concretely, this invention is not limited at all by these Examples. In the examples, “%” and “part” representing the content or amount used are based on weight unless otherwise specified. The weight average molecular weight is a value obtained by gel permeation chromatography (GPC) using polystyrene as a standard product.

Resin monomers (A to O) used in resin synthesis are shown below.

次にモノマーの合成例を述べるが、これらに限定されるものではない。

Next, examples of monomer synthesis will be described, but the present invention is not limited thereto.

２-メチルアダマンタノール(２７．５Ｋg)をテトラヒドロフラン(２２０Ｋg)に溶解し、ピリジン（１５．７Ｋg）を添加した。クロロアセチルクロリド(２８．０２Ｋg)をテトラヒドロフラン(５６．０４Ｋg)に溶解して、４０
℃で滴下した。一晩同温度で熟成した後、氷水で希釈し酢酸エチルで抽出した。有機層を水洗し、濃縮してクロロエステル中間体を１８．９Ｋg得た(収率４７．１％)。得られたクロロエステル中間体(１８．９Ｋg)をジメチルホルムアミド（ＤＭＦ ３７．８Ｋｇ）に溶解した溶液を、メタクリル酸(１０．１Ｋｇ)と炭酸カリウム(１６．１Ｋｇ)とヨウ化カリウム(４．８Ｋｇ)のＤＭＦ(１００．１Ｋｇ)スラリー溶液中に室温で滴下した。４時間室温で熟成した後、通常の後処理を行って、油状物質のモノマーＤを(１９．３Ｋｇ)得た（収率：８５．０％）。
ＮＭＲ １．５５〜２．０４（１２Ｈ、アダマンチル）、１．６４（ｓ、３Ｈ、Ｍｅ）、１．９８（ｓ、３Ｈ、Ｍｅ）、２．２９（２Ｈ、アダマンチル）、４．６３（２Ｈ、メチレン）、５．６４（１Ｈ、オレフィン）、６．２２（１Ｈ、オレフィン）
ＬＣ−ＭＳ ３３１（Ｍ＋Ｋ）⁺ （Ｃ₁₇Ｈ₂₄Ｏ₄＝２９２．３７） Monomer synthesis example 1
Synthesis of 1- (2-methyl-2-adamantyloxycarbonyl) methyl methacrylate (monomer D)

2-Methyladamantanol (27.5 Kg) was dissolved in tetrahydrofuran (220 Kg) and pyridine (15.7 Kg) was added. Chloroacetyl chloride (28.02 kg) was dissolved in tetrahydrofuran (56.04 kg) to give 40
It was dripped at ° C. After aging overnight at the same temperature, the mixture was diluted with ice water and extracted with ethyl acetate. The organic layer was washed with water and concentrated to obtain 18.9 kg of a chloroester intermediate (yield 47.1%). A solution of the obtained chloroester intermediate (18.9 kg) in dimethylformamide (DMF 37.8 kg) was dissolved in methacrylic acid (10.1 kg), potassium carbonate (16.1 kg) and potassium iodide (4.8 kg). ) In DMF (100.1 Kg) slurry solution at room temperature. After aging at room temperature for 4 hours, normal post-treatment was performed to obtain (19.3 kg) of monomer D as an oily substance (yield: 85.0%).
NMR 1.55-2.04 (12H, adamantyl), 1.64 (s, 3H, Me), 1.98 (s, 3H, Me), 2.29 (2H, adamantyl), 4.63 (2H , Methylene), 5.64 (1H, olefin), 6.22 (1H, olefin)
LC-MS 331 (M + K) ⁺ (C ₁₇ H ₂₄ O ₄ = 292.37)

モノマー合成例１と同様な方法で、２-エチルアダマンタノールから上記構造式で示したメタクリル酸エステル（モノマーＯ）を得た。
ＮＭＲ ０．８３（ｔ、３Ｈ、Ｍｅ）１．５７〜２．１３（１２Ｈ、アダマンチル）、１．９８（ｓ、３Ｈ、Ｍｅ）、２．２０（ｑ、２Ｈ、メチレン）、２．３７（２Ｈ、アダマンチル）、４．６６（２Ｈ、メチレン）、５．６４（１Ｈ、オレフィン）、６．２２（１Ｈ、オレフィン） Monomer synthesis example 2
Synthesis of 1- (2-ethyl-2-adamantyloxycarbonyl) methyl methacrylate (monomer O) methacrylate

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester (monomer O) represented by the above structural formula was obtained from 2-ethyladamantanol.
NMR 0.83 (t, 3H, Me) 1.57-2.13 (12H, adamantyl), 1.98 (s, 3H, Me), 2.20 (q, 2H, methylene), 2.37 ( 2H, adamantyl), 4.66 (2H, methylene), 5.64 (1H, olefin), 6.22 (1H, olefin)

モノマー合成例１と同様な方法で、１-メチルシクロヘキサノールから上記構造式で示したメタクリル酸エステル（モノマーＡ）を得た。
ＮＭＲ １．５０（ｓ、３Ｈ、Ｍｅ）１．４５〜１．５８（８Ｈ、シクロヘキシル）、１．９９（ｓ、３Ｈ、Ｍｅ）、２．１７（２Ｈ、シクロヘキシル）、４．６２（２Ｈ、メチレン）、５．６５（１Ｈ、オレフィン）、６．２２（１Ｈ、オレフィン）
モノマー合成例４ メタクリル酸 （３−ヒドロキシアダマンチルオキシカルボニル）メチル（モノマーＭの合成）

メタクリル酸ヒドロキシカルボニルメチル(30g)とジヒドロキシアダマンタン(16.8g)をジクロロエタン（500ml）に加えて、p-トルエンスルホン酸(1g)を添加して、１５時間還流脱水反応を行った。常法に従って後処理を行い、油状物質のメタクリレートモノマー（モノマーＭ）(21.2g)を得た。
ＮＭＲ １．４８〜２．１０（１２Ｈ、アダマンチル）、１．９８（３Ｈ、Ｍｅ）、
２．３２（２Ｈ、アダマンチル）、４．５８３（２Ｈ、メチレン）、５．６４（１Ｈ、オレフィン）、６．２１（１Ｈ、オレフィン）
ＬＣ−ＭＳ ３３３（Ｍ＋Ｋ）⁺ （Ｃ₁₆Ｈ₂₂Ｏ₅＝２９４．３４） Monomer synthesis example 3
Synthesis of 1- (1-methyl-1-cyclohexyloxycarbonyl) methyl methacrylate (monomer A)

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester (monomer A) represented by the above structural formula was obtained from 1-methylcyclohexanol.
NMR 1.50 (s, 3H, Me) 1.45 to 1.58 (8H, cyclohexyl), 1.99 (s, 3H, Me), 2.17 (2H, cyclohexyl), 4.62 (2H, Methylene), 5.65 (1H, olefin), 6.22 (1H, olefin)
Monomer synthesis example 4 (3-hydroxyadamantyloxycarbonyl) methyl methacrylate (synthesis of monomer M)

Hydroxycarbonylmethyl methacrylate (30 g) and dihydroxyadamantane (16.8 g) were added to dichloroethane (500 ml), p-toluenesulfonic acid (1 g) was added, and reflux dehydration reaction was performed for 15 hours. Post-treatment was performed according to a conventional method to obtain an oily methacrylate monomer (monomer M) (21.2 g).
NMR 1.48-2.10 (12H, adamantyl), 1.98 (3H, Me),
2.32 (2H, adamantyl), 4.583 (2H, methylene), 5.64 (1H, olefin), 6.21 (1H, olefin)
LC-MS 333 (M + K) ⁺ (C ₁₆ H ₂₂ O ₅ = 294.34)

モノマー合成例１と同様な方法で、１−メチルシクロヘキサノールから上記構造式で示したメタクリル酸エステルを得た。
ＮＭＲ １．４５〜１．５８（８Ｈ、シクロヘキシル）、１．４５（ｓ、３Ｈ、Ｍｅ）、１．９４（ｓ、３Ｈ、Ｍｅ）、１．９９（ｑ、２Ｈ、メチレン）、２．１５（２Ｈ、シクロヘキシル）、２．３８（ｔ、２Ｈ、メチレン）、４．１８（ｔ、２Ｈ、メチレン）、５．５７（１Ｈ、オレフィン）、６．１１（１Ｈ、オレフィン）
ＦＡＢ−ＭＳ Ｍ+＝２６８ （Ｃ₁₅Ｈ₂₄Ｏ₄＝２６８．３５） Monomer synthesis example 5
Synthesis of 3- (1-methyl-1-cyclohexyloxycarbonyl) propyl methacrylate (monomer B)

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester represented by the above structural formula was obtained from 1-methylcyclohexanol.
NMR 1.45 to 1.58 (8H, cyclohexyl), 1.45 (s, 3H, Me), 1.94 (s, 3H, Me), 1.99 (q, 2H, methylene), 2.15 (2H, cyclohexyl), 2.38 (t, 2H, methylene), 4.18 (t, 2H, methylene), 5.57 (1H, olefin), 6.11 (1H, olefin)
FAB-MS M + = 268 ( C 15 H 24 O 4 = 268.35)

モノマー合成例１と同様な方法で、１−エチルシクロペンタノールから上記構造式で示したメタクリル酸エステルを得た。
ＮＭＲ ０．８９（ｔ、３Ｈ、Ｍｅ）、１．６１〜１．６８（６Ｈ、シクロペンチル）、１．９８（ｑ、２Ｈ、メチレン）、１．９９（ｔ、３Ｈ、Ｍｅ）、２．１２（２Ｈ、シクロペンチル）、４．６０（２Ｈ、メチレン）、５．６４（１Ｈ、オレフィン）、６．２２（１Ｈ、オレフィン） Examples of the synthesis of the compound represented by the general formula (XXII) include the following synthesis examples.
Monomer synthesis example 6

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester represented by the above structural formula was obtained from 1-ethylcyclopentanol.
NMR 0.89 (t, 3H, Me), 1.61-1.68 (6H, cyclopentyl), 1.98 (q, 2H, methylene), 1.99 (t, 3H, Me), 2.12 (2H, cyclopentyl), 4.60 (2H, methylene), 5.64 (1H, olefin), 6.22 (1H, olefin)

モノマー合成例１と同様な方法で、１−エチルシクロペンタノールから上記構造式で示したメタクリル酸エステルを得た。
ＮＭＲ ０．８８（ｔ、３Ｈ、Ｍｅ）、１．５５〜１．７７（６Ｈ、シクロペンチル）、１．９５（ｔ、３Ｈ、Ｍｅ）、１．９６（ｑ、２Ｈ、メチレン）、１．９７（ｑ、２Ｈ、メチレン）、２．１１（２Ｈ、シクロペンチル）、２．３５（ｔ、２Ｈ、メチレン）、４．１５（ｔ、２Ｈ、メチレン）、５．５７（１Ｈ、オレフィン）、６．１１（１Ｈ、オレフィン）
モノマー合成例８
メタクリル酸 ３−（１−エチル−１−シクロヘキシルオキシカルボニル）プロピルの合成

モノマー合成例１と同様な方法で、１−エチルシクロヘキサノールから上記構造式で示したメタクリル酸エステルを得た。
ＮＭＲ ０．８３（ｔ、３Ｈ、Ｍｅ）、１．２０〜１．７０（８Ｈ、シクロヘキシル）、１．９５（ｓ、３Ｈ、Ｍｅ）、１．９６（ｑ、２Ｈ、メチレン）、２．００（ｍ、２Ｈ、メチレン）、２．１５＆２．２０（２Ｈ、シクロヘキシル）、２．４１（ｔ、２Ｈ、メチレン）、４．１９（ｔ、２Ｈ、メチレン）、５．５７（１Ｈ、オレフィン）、６．１１（１Ｈ、オレフィン） Monomer synthesis example 7
Synthesis of 3- (1-ethyl-1-cyclopentyloxycarbonyl) propyl methacrylate

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester represented by the above structural formula was obtained from 1-ethylcyclopentanol.
NMR 0.88 (t, 3H, Me), 1.55-1.77 (6H, cyclopentyl), 1.95 (t, 3H, Me), 1.96 (q, 2H, methylene), 1.97 (Q, 2H, methylene), 2.11 (2H, cyclopentyl), 2.35 (t, 2H, methylene), 4.15 (t, 2H, methylene), 5.57 (1H, olefin), 6. 11 (1H, olefin)
Monomer Synthesis Example 8
Synthesis of 3- (1-ethyl-1-cyclohexyloxycarbonyl) propyl methacrylate

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester represented by the above structural formula was obtained from 1-ethylcyclohexanol.
NMR 0.83 (t, 3H, Me), 1.20 to 1.70 (8H, cyclohexyl), 1.95 (s, 3H, Me), 1.96 (q, 2H, methylene), 2.00 (M, 2H, methylene), 2.15 & 2.20 (2H, cyclohexyl), 2.41 (t, 2H, methylene), 4.19 (t, 2H, methylene), 5.57 (1H, olefin), 6.11 (1H, olefin)

モノマー合成例１と同様な方法で、１−メチルシクロヘキサノールから上記構造式で示したメタクリル酸エステルを得た。
ＮＭＲ １．３５〜１．５８（８Ｈ、シクロヘキシル）、１．４４（ｔ、３Ｈ、Ｍｅ）、１．８０（ｍ、４Ｈ、エチレン）、２．９２（ｔ、３Ｈ、Ｍｅ）、２．１５（２Ｈ、シクロヘキシル）、２．３２（ｔ、２Ｈ、メチレン）、４．１６（ｔ、２Ｈ、メチレン）、５．５７（１Ｈ、オレフィン）、６．１２（１Ｈ、オレフィン） Monomer Synthesis Example 9

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester represented by the above structural formula was obtained from 1-methylcyclohexanol.
NMR 1.35 to 1.58 (8H, cyclohexyl), 1.44 (t, 3H, Me), 1.80 (m, 4H, ethylene), 2.92 (t, 3H, Me), 2.15 (2H, cyclohexyl), 2.32 (t, 2H, methylene), 4.16 (t, 2H, methylene), 5.57 (1H, olefin), 6.12 (1H, olefin)

モノマー合成例１と同様な方法で、１−エチルシクロヘキサノールから上記構造式で示したメタクリル酸エステルを得た。
ＮＭＲ ０．８５（ｔ、３Ｈ、Ｍｅ）、１．２７〜１．７１（８Ｈ、シクロヘキシル）、１．９２（ｑ、２Ｈ、メチレン）、１．９９（ｔ、３Ｈ、Ｍｅ）、２．１８＆２．２３（２Ｈ、シクロヘキシル）、４．６３（２Ｈ、メチレン）、５．６４（１Ｈ、オレフィン）、６．２２（１Ｈ、オレフィン） Monomer synthesis example 10

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester represented by the above structural formula was obtained from 1-ethylcyclohexanol.
NMR 0.85 (t, 3H, Me), 1.27 to 1.71 (8H, cyclohexyl), 1.92 (q, 2H, methylene), 1.99 (t, 3H, Me), 2.18 & 2 .23 (2H, cyclohexyl), 4.63 (2H, methylene), 5.64 (1H, olefin), 6.22 (1H, olefin)

モノマー合成例１と同様な方法で、１−エチルシクロヘキサノールから上記構造式で示したメタクリル酸エステルを得た。
ＮＭＲ ０．８２（ｔ、３Ｈ、Ｍｅ）、１．２０〜１．６４（８Ｈ、シクロヘキシル）、１．７４（ｍ、４Ｈ、エチレン）、１．８９（ｑ、２Ｈ、メチレン）、１．９４（ｓ、３Ｈ、Ｍｅ）、２．１８＆２．２４（２Ｈ、シクロヘキシル）、２．３３（ｔ、２Ｈ、メチレン）、４．１９（ｔ、２Ｈ、メチレン）、５．５７（１Ｈ、オレフィン）、６．１２（１Ｈ、オレフィン） Monomer Synthesis Example 11

In the same manner as in Monomer Synthesis Example 1, methacrylic acid ester represented by the above structural formula was obtained from 1-ethylcyclohexanol.
NMR 0.82 (t, 3H, Me), 1.20 to 1.64 (8H, cyclohexyl), 1.74 (m, 4H, ethylene), 1.89 (q, 2H, methylene), 1.94 (S, 3H, Me), 2.18 & 2.24 (2H, cyclohexyl), 2.33 (t, 2H, methylene), 4.19 (t, 2H, methylene), 5.57 (1H, olefin), 6.12 (1H, olefin)

ＮＭＲ １．１９〜１．６９（８Ｈ、ノルボルニル）、１．５１（３Ｈ、Ｍｅ）、
１．９８（３Ｈ、Ｍｅ）、２．２０（１Ｈ、ノルボルニル）、２．６０（１Ｈ、ノルボルニル）、４．６３（２Ｈ、メチレン）、５．６４（１Ｈ、オレフィン）、６．２２（１Ｈ、オレフィン）
ＬＣ−ＭＳ ２９１（Ｍ＋Ｋ）⁺ （Ｃ₁₄Ｈ₂₀Ｏ₄＝２５２．３１） Monomer Synthesis Example 12
Synthesis of 1- (2-methyl-2-norbornyloxycarbonyl) methyl methacrylate

NMR 1.19-1.69 (8H, norbornyl), 1.51 (3H, Me),
1.98 (3H, Me), 2.20 (1H, norbornyl), 2.60 (1H, norbornyl), 4.63 (2H, methylene), 5.64 (1H, olefin), 6.22 (1H Olefin)
LC-MS 291 (M + K) ⁺ (C ₁₄ H ₂₀ O ₄ = 252.31)

  Examples of the synthesis of the compound represented by the general formula (XXVIII) include the following examples.

ヒドロキシエチルメタクリレート(6.5g)のＴＨＦ(70ml)溶液を、水素化ナトリウム(60%；0.72g)のＴＨＦ(30ml)サスペンジョン中に滴下した。しばらく攪拌した後、ブロモ-γ-ブチロラクトン(8.25g)のＴＨＦ（30ml）溶液を滴下した。室温で５時間熟成した後、常法通りの後処理を行って、油状物質のメタクリル酸モノマー(9.5g)を得た。
ＮＭＲ １．９８（３Ｈ、Ｍｅ）、２．３０〜２．３８（１Ｈ、ラクトン）、２．７２〜２．７８（１Ｈ、ラクトン）、４．３０〜４．３５（１Ｈ、ラクトン）、４．４６〜４．５０（１Ｈ、ラクトン）、４．７８（２Ｈ、メチレン）、５．４９（ｔ、１Ｈ、ラクトン）、５．６９（１Ｈ、オレフィン）、６．２３（１Ｈ、オレフィン）
ＬＣ−ＭＳ ２６７（Ｍ＋Ｋ）＋ （Ｃ₁₀Ｈ₁₂Ｏ₆＝２２８．２） Monomer Synthesis Example 13 Synthesis of 2- (2-oxy-4-hydroxybutanoic acid γ-lactone) ethyl methacrylate (Synthesis of monomer N)

A solution of hydroxyethyl methacrylate (6.5 g) in THF (70 ml) was added dropwise into a THF (30 ml) suspension of sodium hydride (60%; 0.72 g). After stirring for a while, a solution of bromo-γ-butyrolactone (8.25 g) in THF (30 ml) was added dropwise. After aging at room temperature for 5 hours, a post-treatment was performed in the usual manner to obtain an oily methacrylic acid monomer (9.5 g).
NMR 1.98 (3H, Me), 2.30-2.38 (1H, lactone), 2.72-2.78 (1H, lactone), 4.30-4.35 (1H, lactone), 4 .46-4.50 (1H, lactone), 4.78 (2H, methylene), 5.49 (t, 1H, lactone), 5.69 (1H, olefin), 6.23 (1H, olefin)
LC-MS 267 (M + K ) + (C 10 H 12 O 6 = 228.2)

Resin Synthesis Example 1 Synthesis of Resin R7 A 4-neck flask equipped with a thermometer and a reflux tube was charged with 66.11 parts of 1,4-dioxane, and bubbled with nitrogen gas for 30 minutes. After raising the temperature to 87 ° C. under a nitrogen seal, 30.0 parts of monomer D, 12.12 parts of H, 17.67 parts of E, 1.01 part of azobisisobutyronitrile, 1.04 part of 1,4-dioxane, The mixed solution of 57.17 parts was added dropwise over 1 hour while maintaining 87 ° C.
After completion of dropping, the mixture was kept at 87 ° C. for 5 hours. Thereafter, the reaction solution was poured into a mixed solution of 595 parts of methanol and 66 parts of ion-exchanged water with stirring, and the precipitated resin was collected by filtration. The residue was put into 330 parts of methanol and filtered after stirring. The obtained filtrate was put into methanol, stirred and filtered twice more. Thereafter, vacuum drying was performed to obtain 52.3 parts of resin. This resin is designated as R7. Mw: 14565, Mw / Mn: 1.97.

  Resins shown in Table 1 were synthesized by changing the charged monomers only and performing the same operation as in Resin Synthesis Example 1. Table 1 shows the resins used in the evaluation.

[Table 1]
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
Resin Charged monomer molar ratio Mw Mw / Mn
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
R1 A / F / H / I / E = 20/25/5/20/30 9569 1.59
R2 A / F / H / I / E = 30/15/5/20/30 10328 1.69
R3 B / F / H / I / E = 20/25/5/20/30 12806 1.90
R4 B / F / H / I / E = 10/35/5/20/30 8693 1.69
R5 B / F / H / I / E = 5/40/5/20/30 8282 1.75
R6 D / F / H / I / E = 20/25/5/20/30 9503 1.91
R7 D / H / E = 50/25/25 14565 1.97
R8 C / F / H / I / E = 20/25/5/20/30 8200 1.53
R9 C / F / H / I / E = 30/15/5/20/30 9240 1.54
R10 G / H / E = 50/25/25 9721 1.53
R11 J / H / E = 50/25/25 11673 1.84
R12 K / H / E = 50/25/25 14393 2.02
R13 L / H / E = 50/25/25 13391 1.86
R16 O / H / E = 50/25/25 11306 1.97
R17 O / I / E = 50/25/25 13333 2.15
R18 F / O / H / I / E = 25/20/5/20/30 8583 2.20
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━

  Next, in addition to the resins shown in Table 1, examples in which a resist composition was prepared and evaluated using the acid generator and quencher shown below are listed.

<Acid generator>
S1: (4-Methylphenyl) diphenylsulfonium perfluorobutanesulfonate
S2: 1- (2-oxo-2-phenylethyl) tetrahydrothiophenium perfluorobutanesulfonate
S3: Tris (4-tert-butylphenyl) sulfonium perfluorooctanesulfonate <Quencher>
Q1: 2,6-diisopropylaniline
Q2: Tetrabutylammonium hydroxide <solvent>
Y1: Propylene glycol monomethyl ether acetate
51.5 parts 2-heptanone 35 parts γ-butyrolactone 3.5 parts
Y2: Propylene glycol monomethyl ether acetate
84 parts γ-butyrolactone 4 parts

Examples 1-9 and Comparative Examples 1-5
The following components were mixed and dissolved, and further filtered through a fluororesin filter having a pore size of 0.2 μm to prepare a resist solution.

Resin (type and amount are listed in Table 2)
Acid generator (type and amount are listed in Table 2)
Quencher (type and amount are listed in Table 2)
Solvent (type is listed in Table 2)

  The following components were mixed and dissolved, and further filtered through a fluororesin filter having a pore size of 0.2 μm to prepare a resist solution.

  An organic antireflective film having a thickness of 780 mm is formed by applying “ARC-29A-8”, a composition for organic antireflective film manufactured by Brewer, on a silicon wafer and baking it at 215 ° C. for 60 seconds. Subsequently, the above resist solution was spin-coated thereon so that the film thickness after drying was 0.25 μm. After application of the resist solution, pre-baking was performed on a direct hot plate at a temperature indicated in the column “PB” in Table 2 for 60 seconds. Each wafer on which a resist film has been formed is line-and-space patterned using an ArF excimer stepper ("NSR ArF" manufactured by Nikon Co., Ltd., NA = 0.55, 2 / 3Annular) and changing the exposure stepwise. Was exposed.

  After exposure, post-exposure baking is performed for 60 seconds at the temperature indicated in the column of “PEB” in Table 2 on the hot plate, and then paddle development is performed for 60 seconds with an aqueous 2.38 wt% tetramethylammonium hydroxide solution. It was.

  When adding a reflow process (Examples 8-9, Comparative Examples 4-5), after development, baking was performed on a hot plate at a temperature of 165 ° C. for 60 seconds.

  The dark field patterns on the organic antireflection film substrate after development and before and after the reflow process were observed with a scanning electron microscope. The results are shown in Tables 3 and 4. The dark field pattern referred to here is obtained by exposure and development through a reticle in which a chrome layer (light-shielding layer) is formed in a line shape with the glass surface (translucent portion) as a base on the outside, and thus exposure development. After that, the resist layer around the line and space pattern is removed.

Effective sensitivity: 0.13 μm line and space pattern was displayed at an exposure amount of 1: 1.
Resolution: Displayed with the minimum size of the line and space pattern separated by the exposure amount of effective sensitivity.
Line edge roughness: A line edge roughness is indicated by ◎, a good one is indicated by 〇, and a poor one is indicated by ×.
Reflow: The case where the shape changes greatly before and after the reflow process is indicated by ○, the case where only the TOP shape changes and no overall change is indicated by Δ, and the case where no change is observed is indicated by ×.

[Table 2]
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
Example No. Resin Acid generator Quencher Solvent PB PEB
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
Example 1 R1 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 120 ° C 115 ° C
S2 / 0.2 part Example 2 R2 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 120 ° C 115 ° C
S2 / 0.2 part Example 3 R3 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 110 ° C 100 ° C
S2 / 0.2 part Example 4 R4 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 110 ° C 105 ° C
S2 / 0.2 part Example 5 R5 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 110 ° C 105 ° C
S2 / 0.2 part Example 6 R6 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 125 ° C 105 ° C
S2 / 0.2 part Example 7 R7 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 120 ° C 120 ° C
S2 / 0.2 part Example 8 R4 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 120 ° C 110 ° C
S2 / 0.2 part Example 9 R7 / 10 part S1 / 0.23 part Q2 / 0.025 part Y2 130 ° C 115 ° C
S2 / 0.27 part Example 10 R11 / 10 part S1 / 0.30 part Q1 / 0.025 part Y1 100 ° C 100 ° C
Example 11 R12 / 10 part S1 / 0.30 part Q1 / 0.025 part Y1 85 ° C 85 ° C
Example 12 R13 / 10 part S1 / 0.30 part Q1 / 0.025 part Y1 85 ° C 85 ° C
Example 13 R16 / 10 part S1 / 0.30 part Q1 / 0.025 part Y1 90 ° C 85 ° C
Example 14 R17 / 10 part S1 / 0.30 part Q1 / 0.025 part Y1 85 ° C 85 ° C
Example 15 R18 / 10 part S1 / 0.30 part Q1 / 0.025 part Y1 100 ° C 100 ° C
────────────────────────────────────
Comparative Example 1 R8 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 120 ° C 115 ° C
S2 / 0.2 part comparative example 2 R9 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 120 ° C 115 ° C
S2 / 0.2 part comparative example 3 R10 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 120 ° C 120 ° C
S2 / 0.2 part comparative example 4 R10 / 10 part S1 / 0.23 part Q2 / 0.021 part Y2 130 ° C 130 ° C
S2 / 0.27 part comparative example 5 R8 / 10 part S1 / 0.25 part Q1 / 0.025 part Y1 120 ° C 110 ° C
S2 / 0.2 part comparative example 10 R10 / 10 part S1 / 0.30 part Q1 / 0.025 part Y1 130 ° C 125 ° C
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━

[Table 3]
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
Example No. Effective sensitivity Resolution Line edge roughness
(mJ / cm ² ) (μm)
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
Example 1 61 0.12
Example 2 67 0.13
Example 3 63 0.13
Example 4 80 0.13 ○
Example 5 74 0.13 ○
Example 6 95 0.13
Example 7 60 0.14
Example 10 60 0.12
Example 11 65 0.13
Example 12 57.5 0.12
Example 13 40 0.13
Example 14 52.5 0.13
Example 15 60 0.12
──────────────────────────────────
Comparative Example 1 57 0.13 △
Comparative Example 2 55 0.12 ○
Comparative Example 3 102.5 0.15
Comparative Example 6 60 0.13 △
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━

  As is apparent from the table, a chemically amplified positive electrode containing a resin introduced with a (meth) acrylic acid ester derivative in which a linking group is introduced and an acid dissociable group is located away from the main chain, and an acid generator. The resists of Examples 1 to 7 and 10 to 17, which are mold resist compositions, show performances equivalent to or higher in sensitivity and resolution than the resists of Comparative Examples 1 to 3 and 6, while exhibiting line edge roughness. Excellent results were shown.

[Table 4]
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
Example No. Effective sensitivity Resolution after development Reflow
(mJ / cm ² ) (μm)
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
Example 8 51 0.13 ○
Example 9 44 0.15 ○
Example 10 60 0.12 ○
Example 11 65 0.13 ○
Example 12 57.5 0.12 ○
Example 13 40 0.13 ○
Example 14 52.5 0.13 ○
Example 15 60 0.12 ○
──────────────────────────────────
Comparative Example 4 41 0.14 ×
Comparative Example 5 61 0.14
Comparative Example 6 60 0.13 ×
━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━

  As is apparent from the table, a chemically amplified positive electrode containing a resin introduced with a (meth) acrylic acid ester derivative in which a linking group is introduced and an acid dissociable group is located away from the main chain, and an acid generator. As a result, the resists of Examples 8 to 17 which are mold resist compositions show performances equivalent to or better than those of Comparative Examples 4 to 6, and can be applied to the reflow process. showed that.

  The chemically amplified positive resist composition of the present invention is suitable for excimer laser lithography such as ArF and KrF, thereby giving a high-performance resist pattern.

Claims (2)

A (meth) acrylic acid derivative represented by the formula (XII).

(In the formula, X ¹¹ represents a hydrogen atom, methyl or trifluoromethyl.
R ¹¹ is methyl and Y ² completes an adamantane skeleton with the described carbon atoms and Z ⁷ is methylene, trimethylene or tetramethylene; or R ¹¹ is ethyl, isopropyl or butyl and Y ² is Completes the adamantane skeleton with the carbon atoms described and Z ⁷ is methylene, ethylene, trimethylene or tetramethylene; or R ¹¹ is methyl, ethyl, isopropyl or butyl and Y ² is tetramethylene, pentamethylene Or a norbornane skeleton together with the described carbon atoms, and Z ⁷ is methylene, ethylene, trimethylene or tetramethylene. ) An alcohol derivative represented by the formula (XV) and

(In the formula, Y ³ completes a cyclopentane skeleton, cyclohexane skeleton, norbornane skeleton or adamantane skeleton together with the carbon atoms described.)
An acid halide derivative represented by the formula (XVI)

(Wherein W ¹ and W ² each independently represent a chlorine atom, a bromine atom or an iodine atom.
In the above formula (XV), when R ¹³ is methyl and Y ³ together with the described carbon atom completes an adamantane skeleton, Z ¹⁰ is methylene, trimethylene or tetramethylene; or R ¹³ is ethyl, Z ¹⁰ is methylene, ethylene, trimethylene or tetramethylene when isopropyl or butyl and Y ³ together with the described carbon atom completes the adamantane skeleton; or R ¹³ is methyl, ethyl, isopropyl or butyl Z ¹⁰ is methylene, ethylene, trimethylene or tetramethylene when Y ³ completes a cyclopentane skeleton, cyclohexane skeleton or norbornane skeleton together with the carbon atom described. )
After the condensation, the resulting condensate and the carboxylic acid represented by the formula (XVII)

(In the formula, X ¹⁴ represents a hydrogen atom, methyl or trifluoromethyl.)
The method for producing a (meth) acrylic acid derivative according to claim 1, wherein the reaction is carried out in the presence of a deoxidizing agent.