JP2011061056A - Linear light-emitting device, method of manufacturing the same, and surface light source device - Google Patents

Linear light-emitting device, method of manufacturing the same, and surface light source device Download PDF

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JP2011061056A
JP2011061056A JP2009210211A JP2009210211A JP2011061056A JP 2011061056 A JP2011061056 A JP 2011061056A JP 2009210211 A JP2009210211 A JP 2009210211A JP 2009210211 A JP2009210211 A JP 2009210211A JP 2011061056 A JP2011061056 A JP 2011061056A
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long groove
emitting device
substrate
light emitting
linear light
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Kazuhiko Ueno
一彦 上野
Toshiya Ide
俊哉 井出
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Stanley Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that a warp occurs due to stress generated by a difference between thermal expansion coefficients of two members since a plurality of light-emitting element chips are disposed in a long groove formed by sticking a circuit board to a reflective frame or by sticking the circuit board to a heat radiating substrate. <P>SOLUTION: Light-emitting element chips 2-1, 2-2, ..., and circuit chips 3-1, 3-2, ..., are alternately arranged on the bottom of a long groove 1a of a substrate 1 having the long groove 1a, and electrically connected in series via bonding wires 4-1, 4-2 .... <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は複数の発光素子チップたとえば発光ダイオード(LED)チップを線状に配置した線状発光装置、その製造方法並びにこれを用いた面光源装置に関する。面光源装置はたとえば液晶表示装置のバックライトとして用いられる。   The present invention relates to a linear light-emitting device in which a plurality of light-emitting element chips, for example, light-emitting diode (LED) chips, are linearly arranged, a manufacturing method thereof, and a surface light source device using the linear light-emitting device. The surface light source device is used as a backlight of a liquid crystal display device, for example.

高輝度の発光装置として複数のLEDチップを線状につまり直線状に配置した線状発光装置が知られている。   As a high-luminance light-emitting device, a linear light-emitting device in which a plurality of LED chips are arranged linearly, that is, linearly, is known.

図9は第1の従来の線状発光装置を示す斜視図である(参照:特許文献1の図5)。   FIG. 9 is a perspective view showing a first conventional linear light emitting device (see FIG. 5 of Patent Document 1).

図9に示すように、エポキシ等よりなる長方形の回路基板101に桶状の反射枠102を接着剤(図示せず)によって貼り付ける。次に、回路基板101及び反射枠102によって形成された長溝103内に縦方向に線状に3つのLEDチップ104−1,104−2,104−3を配置する。尚、LEDチップ104−1,104−2,104−3の数及び間隔は長溝103の横方向幅及び輝度に応じて設定される。   As shown in FIG. 9, a bowl-shaped reflecting frame 102 is attached to a rectangular circuit board 101 made of epoxy or the like with an adhesive (not shown). Next, three LED chips 104-1, 104-2, and 104-3 are arranged in a line in the longitudinal direction in the long groove 103 formed by the circuit board 101 and the reflection frame 102. Note that the number and interval of the LED chips 104-1, 104-2, and 104-3 are set according to the lateral width and luminance of the long groove 103.

図10は第2の従来の線状発光装置を示す斜視図である(参照:特許文献2の図2)。   FIG. 10 is a perspective view showing a second conventional linear light emitting device (see FIG. 2 of Patent Document 2).

図10に示すように、銅等の放熱基板201に下側回路基板202を接着剤203によって貼り付け、また、下側回路基板202に上側回路基板204を接着剤205によって貼り付ける。下側回路基板202の回路パターン(配線パターン)202aと上側回路基板204の回路パターン(配線パターン)204aとは上側回路基板204のスルーホール(図示せず)によって電気的に接続されている。次に、放熱基板201、下側回路基板202及び上側回路基板204によって形成された長溝206内に縦方向に線状に複数のLEDチップ207を配置する。各LEDチップ207はボンディングワイヤ208によって下側回路基板202の回路パターン202aに電気的に接続される。尚、LEDチップ207の数及び間隔は長溝206の横方向幅及び輝度に応じて設定される。   As shown in FIG. 10, the lower circuit board 202 is attached to the heat dissipation board 201 such as copper with an adhesive 203, and the upper circuit board 204 is attached to the lower circuit board 202 with an adhesive 205. The circuit pattern (wiring pattern) 202a of the lower circuit board 202 and the circuit pattern (wiring pattern) 204a of the upper circuit board 204 are electrically connected by a through hole (not shown) of the upper circuit board 204. Next, a plurality of LED chips 207 are arranged linearly in a long groove 206 formed by the heat dissipation substrate 201, the lower circuit substrate 202, and the upper circuit substrate 204. Each LED chip 207 is electrically connected to the circuit pattern 202 a of the lower circuit board 202 by a bonding wire 208. The number and interval of the LED chips 207 are set according to the lateral width and luminance of the long groove 206.

特開2006−216821号公報Japanese Patent Application Laid-Open No. 2006-216821 特開2007−109945号公報JP 2007-109945 A

図9に示す第1の従来の線状発光装置においては、熱処理時の回路基板101と反射枠102との熱膨張係数の差により応力が発生して反るという課題がある。また、回路基板101と反射枠102とを張り付けるための接着剤がLEDチップ104−1,104−2,104−3を装着する領域にはみ出してしまうので、LEDチップ104−1,104−2,104−3を装着する領域の周囲のスペースを必要以上に大きくしなければならず、この結果、線状発光装置が大型化するという課題もある。特に、線状発光装置を導光板を用いる面光源装置に適用した場合、線状発光装置が大型化すると、光の取込み効率が低下し、また、LEDチップが白色LEDチップの場合、発光の色むらが大きくなる。   In the first conventional linear light emitting device shown in FIG. 9, there is a problem that stress is generated and warped due to a difference in thermal expansion coefficient between the circuit board 101 and the reflection frame 102 during heat treatment. In addition, since the adhesive for attaching the circuit board 101 and the reflection frame 102 protrudes into the region where the LED chips 104-1, 104-2, 104-3 are mounted, the LED chips 104-1, 104-2. , 104-3 must be made larger than necessary, resulting in an increase in the size of the linear light emitting device. In particular, when the linear light-emitting device is applied to a surface light source device using a light guide plate, if the linear light-emitting device increases in size, the light capture efficiency decreases, and if the LED chip is a white LED chip, the light emission color Unevenness increases.

図10に示す第2の従来の線状発光装置においても、熱処理時の放熱基板201と回路基板202、204との熱膨張係数の差により応力が発生して反るという課題がある。また、放熱基板201と下側回路基板202とを張り付けるための接着剤203がLEDチップ207を装着する領域にはみ出してしまうので、LEDチップ207を装着する領域の周囲のスペースを必要以上に大きくしなければならず、この結果、線状発光装置が大型化するという課題がある。   Also in the second conventional linear light emitting device shown in FIG. 10, there is a problem that stress is generated and warped due to a difference in thermal expansion coefficient between the heat dissipation substrate 201 and the circuit substrates 202 and 204 during heat treatment. In addition, since the adhesive 203 for attaching the heat dissipation board 201 and the lower circuit board 202 protrudes into the area where the LED chip 207 is mounted, the space around the area where the LED chip 207 is mounted becomes larger than necessary. As a result, there is a problem that the linear light emitting device is increased in size.

上述の課題を解決するために、本発明に係る線状発光装置は、長溝が形成された基板と、基板の長溝の底に線状に配置された複数の発光素子チップと、基板の長溝の底に線状に配置された複数の回路チップとを具備し、発光素子チップ及び回路チップをボンディングワイヤによって電気的に直列接続する。これにより、従来の接着剤で貼り付けた異なる部品の代りに、一体形成された基板を用いているので、熱膨張係数の差による応力が生じず、従って、反りは生じない。また、接着剤も不要となる。さらに、輝度に応じて発光素子チップの数を増減させた場合にも、発光素子チップ間隔に合わせて発光素子チップ間の回路チップのサイズを調整することによりボンディングワイヤ長は常に短くなり、ボンディング作業がし易くなる。   In order to solve the above-described problems, a linear light emitting device according to the present invention includes a substrate having a long groove, a plurality of light emitting element chips arranged linearly at the bottom of the long groove of the substrate, and a long groove of the substrate. A plurality of circuit chips arranged linearly on the bottom, and the light emitting element chip and the circuit chip are electrically connected in series by bonding wires. Thereby, instead of the different parts pasted with the conventional adhesive, an integrally formed substrate is used, so that stress due to the difference in thermal expansion coefficient does not occur, and therefore warpage does not occur. Further, no adhesive is required. Furthermore, even when the number of light emitting element chips is increased or decreased according to the luminance, the bonding wire length is always shortened by adjusting the size of the circuit chip between the light emitting element chips according to the interval between the light emitting element chips. It becomes easy to do.

また、発光素子チップ及び回路チップが長溝の長手方向に同一線上に交互に配置され、ボンディングワイヤが隣接する回路チップと発光素子チップとの間に接続され、長溝の両端から配線を引き出した。   Further, the light emitting element chips and the circuit chips were alternately arranged on the same line in the longitudinal direction of the long groove, the bonding wires were connected between the adjacent circuit chip and the light emitting element chip, and the wiring was drawn from both ends of the long groove.

さらに、本発明に係る線状発光装置の製造方法は、長溝が形成された基板の長溝の底に複数の発光素子チップを長溝の長手方向に配置する工程と、長溝の底に複数の回路チップを配置する工程と、発光素子チップ及び回路チップをボンディングワイヤによって電気的に直列接続する工程とを具備し、回路チップが発光素子と同一線上に交互に配置されたものである。発光素子配置工程後に回路チップ配置工程を行えば、発光素子接合時に用いるAuSn半田接合によって生じる熱の影響が回路チップに及ぶことはない。   Furthermore, the method for manufacturing the linear light emitting device according to the present invention includes a step of arranging a plurality of light emitting element chips in the longitudinal direction of the long groove on the bottom of the long groove of the substrate on which the long groove is formed, and a plurality of circuit chips on the bottom of the long groove. And a step of electrically connecting the light emitting element chips and the circuit chips in series by bonding wires, and the circuit chips are alternately arranged on the same line as the light emitting elements. If the circuit chip arrangement step is performed after the light emitting element arrangement step, the influence of heat generated by the AuSn solder bonding used at the time of light emitting element bonding does not reach the circuit chip.

さらに、上述の線状発光装置の基板の長溝に対向した導光板を具備し、面光源装置を実現する。線状発光装置の基板を導光板に接触させれば、発光素子が基板の長溝に配置されているので、導光板への光取込み効率が向上する。   Furthermore, the light source plate facing the long groove of the substrate of the above-described linear light emitting device is provided to realize a surface light source device. If the substrate of the linear light-emitting device is brought into contact with the light guide plate, the light-emitting element is arranged in the long groove of the substrate, so that the efficiency of taking light into the light guide plate is improved.

本発明によれば、線状発光装置の反りを防止することができると共に、小型化できる。また、発光素子チップ数が増減した場合でも、ボンディング作業を容易にして製造コストを低減させることができる。   According to the present invention, it is possible to prevent the linear light emitting device from warping and to reduce the size. Further, even when the number of light emitting element chips is increased or decreased, the bonding operation can be facilitated and the manufacturing cost can be reduced.

本発明に係る線状発光装置の実施の形態を示す斜視図である。It is a perspective view which shows embodiment of the linear light-emitting device concerning this invention. 図1の基板に用いられる材料の反射特性を示すグラフである。It is a graph which shows the reflective characteristic of the material used for the board | substrate of FIG. 図1の線状発光装置の蛍光体樹脂封止を示す斜視図である。It is a perspective view which shows fluorescent substance resin sealing of the linear light-emitting device of FIG. 図1のLEDチップ及び回路チップの配置の第1の例を示し、(A)は側面図、(B)は平面図である。The 1st example of arrangement | positioning of the LED chip of FIG. 1 and a circuit chip is shown, (A) is a side view, (B) is a top view. 図1のLEDチップ及び回路チップの配置の第2の例を示し、(A)は側面図、(B)は平面図である。FIGS. 2A and 2B show a second example of the arrangement of the LED chip and the circuit chip in FIG. 1, and FIG. 図1の基板の変更例を示す斜視図である。FIG. 2 is a perspective view showing a modified example of the substrate in FIG. 図1、図3の線状発光装置の製造方法を説明するためのフローチャートである。It is a flowchart for demonstrating the manufacturing method of the linear light-emitting device of FIG. 1, FIG. 図1、図3の線状発光装置を用いた面発光装置を示す斜視図である。It is a perspective view which shows the surface light-emitting device using the linear light-emitting device of FIG. 1, FIG. 第1の従来の線状発光装置を示す斜視図である。It is a perspective view which shows the 1st conventional linear light-emitting device. 第2の従来の線状発光装置を示す斜視図である。It is a perspective view which shows the 2nd conventional linear light-emitting device.

図1は本発明に係る線状発光装置の第1の実施の形態を示す斜視図である。   FIG. 1 is a perspective view showing a first embodiment of a linear light-emitting device according to the present invention.

図1に示すように、長溝1aが形成された基板1は高反射率かつ高熱伝導率の材料たとえばAlよりなる。尚、反射率が低いが高熱伝導率のCuあるいはセラミックを用いた場合には、その上に図2に示す高反射率のAl膜あるいはAg膜を形成すればよい。長溝1aは基板1の短手の一側面から他の側面に通じている。   As shown in FIG. 1, the substrate 1 on which the long groove 1a is formed is made of a material having high reflectivity and high thermal conductivity, for example, Al. When Cu or ceramic with low reflectivity but high thermal conductivity is used, an Al film or Ag film with high reflectivity shown in FIG. 2 may be formed thereon. The long groove 1a communicates from one short side of the substrate 1 to the other side.

尚、図2に示すように、紫外光〜緑光領域におけるAl、Agの反射率はAuの反射率より高いので、Auの代りにAl、Agを用いることは特に白色LEDにおいて有効である。しかし、Agの反射率は、光熱、大気中のハロゲンイオン、大気中のSによって比較的短時間で低下する。他方、Alはその表面に非常に緻密な保護力の強い自然酸化膜が形成されるので、耐腐食性、耐俣性に優れ、この結果、Alの反射率の低下はほとんどない。また、Alの自然酸化膜の代りに強固なアルマイト処理をしてもよい。   As shown in FIG. 2, the reflectivity of Al and Ag in the ultraviolet light to green light region is higher than the reflectivity of Au. Therefore, it is particularly effective for white LEDs to use Al and Ag instead of Au. However, the reflectance of Ag decreases in a relatively short time due to light heat, halogen ions in the atmosphere, and S in the atmosphere. On the other hand, since a very dense natural oxide film having a strong protective force is formed on the surface of Al, it is excellent in corrosion resistance and weather resistance. As a result, there is almost no decrease in the reflectance of Al. Further, a strong alumite treatment may be performed instead of the natural oxide film of Al.

基板1の長溝1aには、LEDチップ2−1,2−2,2−3及び回路チップ(配線チップ)3−1,3−2,3−3,3−4が線状に配置されている。この場合、各LEDチップ2−1,2−2,2−3が回路チップ3−1,3−2,3−3,3−4の間に配置されている。このように、回路チップを基板1の側壁部上面に設けた場合に比較してLEDチップの短手方向の長さを短くすることができる。   LED chips 2-1, 2-2, 2-3 and circuit chips (wiring chips) 3-1, 3-2, 3-3, and 4-4 are linearly arranged in the long groove 1 a of the substrate 1. Yes. In this case, the LED chips 2-1, 2-2, 2-3 are arranged between the circuit chips 3-1, 3-2, 3-3, 3-4. As described above, the length of the LED chip in the short direction can be reduced as compared with the case where the circuit chip is provided on the upper surface of the side wall portion of the substrate 1.

LEDチップ2−1,2−2,2−3及び回路チップ3−1,3−2,3−3,3−4はボンディングワイヤ4−1,4−2,…,4−6によって電気的に直列接続される。   The LED chips 2-1, 2-2, 2-3 and the circuit chips 3-1, 3-2, 3-3, 3-4 are electrically connected by bonding wires 4-1, 4-2,. Connected in series.

最外側の回路チップ3−1,3−4には給電用配線5−1,5−2が接続されている。つまり、基板1の短手の両側面から給電用配線5−1,5−2が導出されている。   Power supply wirings 5-1 and 5-2 are connected to the outermost circuit chips 3-1 and 3-4. That is, the power supply wirings 5-1 and 5-2 are led out from the short side surfaces of the substrate 1.

LEDチップ2−1,2−2,2−3が青色LEDチップの場合、図3に示すように、長溝1a内には蛍光体樹脂6で封止し、白色LEDを構成する。この蛍光体樹脂6は、色むらを抑制する。さらに、図示しないが、蛍光体樹脂が長溝1aから流れ出ないように、チクソ性の高い白色シリコーン樹脂たとえばTiOフィラー入りシリコーン樹脂を長溝1aの両端を塞ぐように配置する。このように、蛍光体樹脂6の側面は放熱性の高い基板1に接触しているので、放熱性を向上できる。   When the LED chips 2-1, 2-2, 2-3 are blue LED chips, as shown in FIG. 3, the long groove 1a is sealed with a phosphor resin 6 to form a white LED. This phosphor resin 6 suppresses uneven color. Furthermore, although not shown in the drawing, a white silicone resin having high thixotropy, for example, a silicone resin containing TiO filler, is disposed so as to block both ends of the long groove 1a so that the phosphor resin does not flow out of the long groove 1a. Thus, since the side surface of the phosphor resin 6 is in contact with the substrate 1 having a high heat dissipation property, the heat dissipation property can be improved.

図1、図3の線状発光装置においては、従来の図9の反射枠102としての長溝1aが形成されかつ従来の図10の下側回路基板202が回路チップとされているので、熱処理時の熱膨張係数の差による応力は基板1に生じず、従って、反りは生じない。   In the linear light emitting device of FIGS. 1 and 3, the long groove 1a as the reflective frame 102 of the conventional FIG. 9 is formed and the lower circuit board 202 of the conventional FIG. 10 is a circuit chip. The stress due to the difference in thermal expansion coefficient is not generated in the substrate 1, and therefore no warping occurs.

また、図1、図3の線状発光装置においては、従来の図9の反射枠102及び図10の下側回路基板202のための接着剤は不要となるので、LEDチップ2−1,2−2,2−3を装着する領域の周囲のスペースを必要以上に大きくする必要がなくなり、この結果、線状発光装置を小型化できる。   In the linear light emitting device of FIGS. 1 and 3, the adhesive for the conventional reflective frame 102 of FIG. 9 and the lower circuit board 202 of FIG. It is not necessary to increase the space around the area where the −2 and 2-3 are mounted more than necessary, and as a result, the linear light emitting device can be reduced in size.

さらに、図1、図3の線状発光装置においては、基板1を高反射率かつ高熱伝導率のAl基板とし、あるいは高熱伝導率のCu基板もしくはセラミック基板上を高反射率のAlもしくはAgで被膜することにより放熱性が向上するので、LEDチップ2−1,2−2,2−3への電流を増加させて輝度を増加させることができる。   Further, in the linear light emitting device of FIGS. 1 and 3, the substrate 1 is an Al substrate having a high reflectivity and a high thermal conductivity, or a high reflectivity Al or Ag on a Cu substrate or a ceramic substrate having a high thermal conductivity. Since the heat dissipation is improved by coating, the luminance can be increased by increasing the current to the LED chips 2-1, 2-2, 2-3.

LEDチップの数及び間隔は長溝1aの横方向幅及び輝度に応じて設定される。たとえば、LEDチップの輝度が低い場合には、図4に示すように、LEDチップ数を3個とし、他方、LEDチップの輝度が高い場合には、図5に示すように、LEDチップ数を2個とする。   The number and interval of the LED chips are set according to the lateral width and luminance of the long groove 1a. For example, when the brightness of the LED chip is low, the number of LED chips is three as shown in FIG. 4, while when the brightness of the LED chip is high, the number of LED chips is set as shown in FIG. Two.

図4においては、3個のLEDチップ2−1,2−2,2−3が光、熱による劣化が少ない透明シリコーン接着層2−1a,2−2a,2−3aによって基板1に装着されている。これにより、LEDチップ2−1,2−2,2−3の下側からの光が透明シリコーン接着層2−1a,2−2a,2−3aを介して反射されるので、輝度を増加できる。また、4個の回路チップ3−1,3−2,3−3,3−4はプリント配線基板であり、たとえば、FP-4もしくはフレキシブル絶縁基板等の絶縁基板3−1a,3−2a,3−3a,3−4a及びその上に形成されたAuめっきしたCu導電層3−1b,3−2b,3−3b,3−4bよりなり、図示しないシリコーンペースト、Agペースト、エポキシペースト等によって基板1に装着されている。但し、回路チップ3−1,3−2,3−3,3−4は光を発しないので接着層の透明性は必要ない。このとき、同一形状、同一構成の回路チップ3−1,3−2,3−3,3−4は適正な寸法に加工されており、この結果、ボンディングワイヤ4−1,4−2,4−3,4−4,4−5,4−6は短く、適切な長さW1となり、ワイヤボンディング作業がし易くなっている。これにより、ボンディングワイヤ4−1,4−2,…,4−6は通常Auよりなるので、高価なAu材料を節減でき、製造コストの上昇を抑制できる。また、透明シリコーン接着層2−1a,2−2a,2−3aは長溝1a両端の給電用配線5−1,5−2の間において連続しない島状の接着層とされている。これにより応力の発生しやすい接着剤が連続したものでなく点在したものとなるので基板1の反りを生じさせにくいものとなっている。   In FIG. 4, three LED chips 2-1, 2-2, 2-3 are mounted on the substrate 1 by transparent silicone adhesive layers 2-1a, 2-2a, 2-3a that are less susceptible to deterioration by light and heat. ing. Thereby, since the light from the lower side of the LED chips 2-1, 2-2, 2-3 is reflected through the transparent silicone adhesive layers 2-1a, 2-2a, 2-3a, the luminance can be increased. . The four circuit chips 3-1, 3-2, 3-3, and 3-4 are printed wiring boards, for example, insulating boards 3-1 a, 3-2 a, such as FP-4 or a flexible insulating board, 3-3a, 3-4a and Au plated Cu conductive layers 3-1b, 3-2b, 3-3b, 3-4b formed thereon, and are made of silicone paste, Ag paste, epoxy paste, etc. (not shown) Mounted on the substrate 1. However, since the circuit chips 3-1, 3-2, 3-3, 3-4 do not emit light, the transparency of the adhesive layer is not necessary. At this time, the circuit chips 3-1, 3-2, 3-3 and 3-4 having the same shape and the same configuration are processed into appropriate dimensions, and as a result, the bonding wires 4-1, 4-2 and 4. -3, 4-4, 4-5 and 4-6 are short and have an appropriate length W1, which facilitates the wire bonding operation. Thereby, since the bonding wires 4-1, 4-2,..., 4-6 are usually made of Au, expensive Au material can be saved, and an increase in manufacturing cost can be suppressed. Further, the transparent silicone adhesive layers 2-1a, 2-2a, and 2-3a are island-like adhesive layers that are not continuous between the power supply wirings 5-1 and 5-2 at both ends of the long groove 1a. As a result, the adhesive that is likely to generate stress is not continuous but scattered, and thus it is difficult for the substrate 1 to warp.

図5においては、2個のLEDチップ2−1,2−2,2−3及び3個の回路チップ3−1,3−2,3−3が図4の場合と同様に基板1に装着されているが、同一形状、同一構成の回路チップ3−1,3−2,3−3の寸法は図4の場合より大きく加工されており、この結果、ボンディングワイヤ4−1,4−2,4−3,4−4はやはり短く、適切な長さW2(≒W1)となり、やはり、ワイヤボンディング作業がし易くなると共に、Au材料を節減できる。   In FIG. 5, two LED chips 2-1, 2-2, 2-3 and three circuit chips 3-1, 3-2, 3-3 are mounted on the substrate 1 as in FIG. However, the dimensions of the circuit chips 3-1, 3-2 and 3-3 having the same shape and the same configuration are processed larger than the case of FIG. 4, and as a result, the bonding wires 4-1 and 4-2 are processed. , 4-3, 4-4 are also short and have an appropriate length W 2 (≈W 1), which facilitates wire bonding work and saves Au material.

また、図4、図5においては、ワイヤボンディング作業を行う際に、Auボールがクッションとなる1打目をLEDチップ側にし、Auボールがない2打目を回路チップ側にすることにより、LEDチップへの衝撃を和らげてLEDチップを保護する。   4 and 5, when performing the wire bonding operation, the LED ball is placed on the LED chip side with the first ball with the Au ball as a cushion, and the circuit chip side with the second ball without the Au ball. Reduces the impact on the chip and protects the LED chip.

このように、種々の線状発光装置の要求される輝度及びLEDチップの輝度に応じてLEDチップ数を増減すればよく、この場合、製造コストの低い同一形状、同一構成の回路チップのサイズのみを調整してボンディングワイヤの長さを適切にする。この結果、製造コストを低減できる。   As described above, the number of LED chips may be increased or decreased according to the required luminance of various linear light emitting devices and the luminance of the LED chips. To adjust the length of the bonding wire. As a result, the manufacturing cost can be reduced.

図6は図1の基板1の変更例を示す斜視図である。すなわち、図6の(A)に示すように、基板1の下面側に長溝1aに対向せずに長溝1aに平行な長溝1b,1b’を設け、あるいは図6の(B)に示すように、基板1の上面側に長溝1aに平行な長溝1c,1c’を設け、あるいは図6の(C)に示すように、基板1の側面側に長溝1aに平行な長溝1d,1d’を設ける。これにより、基板1の反りがさらに抑止されると共に、基板1の表面積の増加により放熱性を向上できる。尚、図示しないが、基板1の下面側あるいは側面側に放熱フィンを設けて放熱性を向上させることもできる。   FIG. 6 is a perspective view showing a modified example of the substrate 1 of FIG. That is, as shown in FIG. 6A, long grooves 1b and 1b ′ parallel to the long groove 1a are provided on the lower surface side of the substrate 1 so as not to face the long groove 1a, or as shown in FIG. The long grooves 1c and 1c ′ parallel to the long grooves 1a are provided on the upper surface side of the substrate 1, or the long grooves 1d and 1d ′ parallel to the long grooves 1a are provided on the side surface of the substrate 1 as shown in FIG. . Thereby, the curvature of the board | substrate 1 is further suppressed and heat dissipation can be improved by the increase in the surface area of the board | substrate 1. FIG. Although not shown, a heat radiating fin may be provided on the lower surface side or the side surface side of the substrate 1 to improve heat dissipation.

図7は図1、図3の線状発光装置の製造方法を説明するためのフローチャートである。   FIG. 7 is a flowchart for explaining a method of manufacturing the linear light emitting device of FIGS. 1 and 3.

始めに、ステップ701において、長溝1aが形成された基板1の長溝1aの底に複数のLEDチップ2−1,2−2,…を配置する。   First, in step 701, a plurality of LED chips 2-1, 2-2,... Are arranged at the bottom of the long groove 1a of the substrate 1 in which the long groove 1a is formed.

次に、ステップ702において、基板1の長溝1aの底に複数の回路チップ3−1,3−2,…を配置する。このとき、各LEDチップは回路チップ間に配置され、LEDチップと回路チップとが交互に線状に配置されることになる。   Next, in step 702, a plurality of circuit chips 3-1, 3-2,... Are arranged at the bottom of the long groove 1 a of the substrate 1. At this time, the LED chips are arranged between the circuit chips, and the LED chips and the circuit chips are alternately arranged in a linear shape.

次に、ステップ703において、LEDチップ2−1,2−2,…及び回路チップ3−1,3−2,…にボンディングワイヤ4−1,4−2,…によって電気的に直列接続する。この場合、各ボンディングワイヤ4−1,4−2,…の1打目はLEDチップ側にし、2打目を回路チップ側にし、LEDチップへの衝撃を和らげる。   Next, in step 703, the LED chips 2-1, 2-2,... And the circuit chips 3-1, 3-2,. In this case, the first stroke of each bonding wire 4-1, 4-2,... Is placed on the LED chip side, and the second stroke is placed on the circuit chip side, so that the impact on the LED chip is reduced.

最後、ステップ704において、基板1の長溝1aに蛍光体樹脂6を塗布して蛍光体樹脂6によって長溝1aを埋める。   Finally, in step 704, the phosphor resin 6 is applied to the long groove 1 a of the substrate 1 and the long groove 1 a is filled with the phosphor resin 6.

図7の製造方法においては、LEDチップ配置後に、回路チップを配置しているので、回路チップを基板1にAuSnなどの半田による接合した場合には回路チップへの熱損失による影響はない。   In the manufacturing method of FIG. 7, since the circuit chip is disposed after the LED chip is disposed, when the circuit chip is joined to the substrate 1 by solder such as AuSn, there is no influence due to heat loss to the circuit chip.

図8は図1、図3の線状発光装置を用いた面発光装置を示す斜視図である。図8に示すように、図1、図3の線状発光装置に導光板6をLEDチップ2−1,2−2,…の配置に沿うように装着することにより、面発光装置を構成する。この場合、図1、図3の線状発光装置の基板1の側壁部の上面に回路(配線)パターンが存在しないので、線状発光装置と導光板6とのギャップ61をほぼゼロにし、導光板6に近づけることができる。たとえば、線状発光装置の基板1を導光板6に接触させることができる。また、LEDチップ2−1,2−2,…が長溝1aに配置されているので、基板1の水平方向の光が減少して基板1の上方向の光が増加する。従って、導光板6に対して光取込み効率を高くでき、面発光装置を液晶表示装置のバックライトとして用いた場合に輝度を大きくできる。また、種々のサイズの導光板6に対応できるので、製造コストを低減できる。   FIG. 8 is a perspective view showing a surface light emitting device using the linear light emitting device of FIGS. 1 and 3. As shown in FIG. 8, the surface light-emitting device is configured by mounting the light guide plate 6 along the arrangement of the LED chips 2-1, 2-2,... On the linear light-emitting device of FIGS. . In this case, there is no circuit (wiring) pattern on the upper surface of the side wall portion of the substrate 1 of the linear light emitting device of FIGS. It can be brought close to the light plate 6. For example, the substrate 1 of the linear light emitting device can be brought into contact with the light guide plate 6. Further, since the LED chips 2-1, 2-2,... Are arranged in the long groove 1a, the horizontal light of the substrate 1 decreases and the upward light of the substrate 1 increases. Therefore, the light capturing efficiency can be increased with respect to the light guide plate 6, and the luminance can be increased when the surface emitting device is used as a backlight of a liquid crystal display device. Moreover, since it can respond to the light guide plate 6 of various sizes, manufacturing cost can be reduced.

1:基板
1a,1b,1b’,1c,1c’,1d,1d’:長溝
2−1,2−2,…:LEDチップ
2−1a,2−2a,…:透明シリコーン接着層
3−1,3−2,…:回路チップ(配線チップ)
3−1a,3−2a,…:絶縁基板
3−1b,3−2b,…:Cu導電層
4−1,4−2,…:ボンディングワイヤ
5−1,5−2:給電用配線
101:回路基板
102:反射枠
103:長溝
104−1,104−2,104−3:LEDチップ
201:放熱基板
202:下側回路基板
202a:回路パターン(配線パターン)
203:接着剤
204:上側回路基板
204a:回路パターン(配線パターン)
205:接着剤
206:長溝
207:LEDチップ
208:ボンディングワイヤ


1: Substrates 1a, 1b, 1b ′, 1c, 1c ′, 1d, 1d ′: Long grooves 2-1, 2-2,...: LED chips 2-1a, 2-2a,. , 3-2, ...: Circuit chip (wiring chip)
3-1a, 3-2a, ...: Insulating substrates 3-1b, 3-2b, ...: Cu conductive layers 4-1, 4-2, ...: Bonding wires 5-1, 5-2: Power supply wiring 101: Circuit board 102: Reflection frame 103: Long grooves 104-1, 104-2, 104-3: LED chip 201: Heat dissipation board 202: Lower circuit board 202a: Circuit pattern (wiring pattern)
203: Adhesive 204: Upper circuit board 204a: Circuit pattern (wiring pattern)
205: Adhesive 206: Long groove 207: LED chip 208: Bonding wire


Claims (9)

長溝が形成された基板と、
該基板の長溝の底に線状に配置された複数の発光素子チップと、
前記基板の長溝の底に線状に配置された複数の回路チップと
を具備し、
前記発光素子チップ及び前記回路チップをボンディングワイヤによって電気的に直列接続した線状発光装置。
A substrate on which a long groove is formed;
A plurality of light emitting device chips arranged linearly at the bottom of the long groove of the substrate;
A plurality of circuit chips arranged linearly at the bottom of the long groove of the substrate,
A linear light emitting device in which the light emitting element chip and the circuit chip are electrically connected in series by bonding wires.
さらに、前記発光素子チップ及び前記回路チップが前記長溝の長手方向に同一線上に交互に配置され、
前記ボンディングワイヤが隣接する前記回路チップと前記発光素子チップとの間に接続され、
前記長溝の両端から配線を引き出した請求項1に記載の線状発光装置。
Furthermore, the light emitting element chip and the circuit chip are alternately arranged on the same line in the longitudinal direction of the long groove,
The bonding wire is connected between the circuit chip and the light emitting element chip adjacent to each other;
The linear light-emitting device according to claim 1, wherein wiring is drawn from both ends of the long groove.
前記発光素子チップを透明接着層により前記基板の長溝の底に接着した請求項1に記載の線状発光装置。   The linear light-emitting device according to claim 1, wherein the light-emitting element chip is bonded to the bottom of the long groove of the substrate with a transparent adhesive layer. 前記各回路チップが、
絶縁基板と、
該絶縁基板上に形成された導電層と
を具備する請求項1に記載の線状発光装置。
Each of the circuit chips is
An insulating substrate;
The linear light-emitting device according to claim 1, further comprising: a conductive layer formed on the insulating substrate.
さらに、前記長溝に埋め込められた蛍光体樹脂を具備し、前記発光素子チップ、前記各回路チップ及び前記ボンディングワイヤを前記蛍光体樹脂で封止した請求項1に記載の線状発光装置。   The linear light-emitting device according to claim 1, further comprising a phosphor resin embedded in the long groove, wherein the light-emitting element chip, each circuit chip, and the bonding wire are sealed with the phosphor resin. 前記基板の前記長溝に平行な他の長溝を設けた請求項1に記載の線状発光装置。   The linear light-emitting device according to claim 1, wherein another long groove parallel to the long groove of the substrate is provided. 長溝が形成された基板の前記長溝の底に複数の発光素子チップを前記長溝の長手方向に配置する工程と、
前記長溝の底に複数の回路チップを配置する工程と、
前記発光素子チップ及び前記回路チップをボンディングワイヤによって電気的に直列接続する工程と
を具備し、前記回路チップが前記発光素子と同一線上に交互に配置された線状発光装置の製造方法。
A step of arranging a plurality of light emitting element chips in the longitudinal direction of the long groove on the bottom of the long groove of the substrate on which the long groove is formed;
Arranging a plurality of circuit chips at the bottom of the long groove;
And a step of electrically connecting the light emitting element chip and the circuit chip in series by a bonding wire, wherein the circuit chip is alternately arranged on the same line as the light emitting element.
前記回路チップ配置工程が前記発光素子配置工程の後で行われる請求項7に記載の線状発光装置の製造方法。   The method for manufacturing a linear light emitting device according to claim 7, wherein the circuit chip arranging step is performed after the light emitting element arranging step. 請求項1〜6の1つに記載の線状発光装置と、
該線状発光装置の基板の長溝に対向した導光板と
を具備する面発光装置。
A linear light-emitting device according to claim 1;
A surface light emitting device comprising: a light guide plate facing a long groove of a substrate of the linear light emitting device.
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